KR20240077563A - An apparatus for treating substrate - Google Patents

Abstract

The present invention relates to a device for processing a substrate, and the technical problem to be solved by the present invention is to uniformly control the thickness of the plasma sheath by controlling the strength of the electric field generated in the processing space.
Accordingly, the substrate processing apparatus of the present invention includes a housing having a processing space for processing a substrate; a lower electrode disposed in the processing space; an upper electrode disposed in the processing space and disposed on top of the lower electrode; a plasma source that excites a process gas supplied to the processing space and generates plasma between the upper electrode and the lower electrode to process the substrate; and a magnetic adjustment unit disposed on the upper part of the housing and generating an induced magnetic field to control the plasma sheath of the upper electrode. Includes.

Description

{AN APPARATUS FOR TREATING SUBSTRATE}

The present invention relates to an apparatus for processing a substrate, and more particularly, to a substrate processing apparatus for plasma processing a substrate.

Plasma refers to an ionized gas state composed of ions, radicals, and electrons. Plasma is created by very high temperatures, strong electric fields, or RF electromagnetic fields. The semiconductor device manufacturing process may include an etching process that removes a thin film formed on a substrate, such as a wafer, using plasma. The etching process is performed when ions and/or radicals of plasma collide with or react with the thin film on the substrate.

For example, when performing an etching process using plasma, the thin film formed in some areas of the substrate is etched excessively than the process requirements, and the thin film formed in other areas is etched less than the process requirements. In other words, when processing a substrate using plasma, differences in etch rates for each region of the substrate occur. This difference in etching rate for each area of the substrate is caused by various factors such as the flow of air in the processing space, the uniformity of supply of process gas in the processing space, the supply location of the process gas, and the uniformity of plasma in the processing space. These factors These cause differences in the density or intensity of plasma for each area within the processing space where the substrate is plasma treated. If the density or intensity of plasma is generated differently for each region within the processing space, plasma with different conditions acts on each region of the substrate. Because of this, when processing a substrate using plasma, it is difficult to treat the entire area of the substrate uniformly.

The technical problem of the present invention to solve the above problems is to uniformly control the thickness of the plasma sheath by controlling the intensity of the electric field generated in the processing space.

The technical problem to be solved by the present invention is not limited here, and those skilled in the art will understand that other technical problems not mentioned can be derived from the configurations used in the specification and drawings below.

A substrate processing apparatus of the present invention for achieving the above technical problem includes a housing having a processing space for processing a substrate; a lower electrode disposed in the processing space; an upper electrode disposed in the processing space and disposed on top of the lower electrode; a plasma source that excites a process gas supplied to the processing space and generates plasma between the upper electrode and the lower electrode to process the substrate; and a magnetic adjustment unit disposed on the upper part of the housing and generating an induced magnetic field to control the plasma sheath of the upper electrode. Includes.

According to one embodiment, the self-regulating unit includes: a first coil disposed in the upper space of the housing; a second coil disposed in the upper space of the housing and disposed outside the first coil; And, an induced magnetic field power supply unit that supplies current to each of the first coil and the second coil so that the induced magnetic field generated from each of the first coil and the second coil is generated up to the upper electrode; Includes.

According to one embodiment, the induced magnetic field power supply unit supplies a larger current to the second coil than the current supplied to the first coil.

According to one embodiment, the self-regulating unit includes a third coil disposed outside the second coil and generating an induced magnetic field by receiving current from the induced magnetic field power supply unit; It further includes.

According to one embodiment, the first coil, the second coil, and the third coil are formed in a ring shape, and the diameter of the third coil is larger than the diameters of the first coil and the second coil. The diameter of the second coil is formed to be larger than the diameter of the first coil.

According to one embodiment, the height of the third coil is located between the height of the first coil and the height of the second coil.

According to one embodiment, the induced magnetic field power supply unit supplies a larger current to the second coil than the current supplied to the first coil and the third coil.

According to one embodiment, the induced magnetic field generated in the first coil, the induced magnetic field generated in the second coil, and the induced magnetic field generated in the third coil are formed by overlapping each other.

According to one embodiment, the self-regulating unit includes: a shielding body selectively formed among an area between the first coil and the second coil and an area between the second coil and the third coil; It further includes.

Meanwhile, a substrate processing apparatus of the present invention for achieving the above technical problem includes a housing having a processing space for processing a substrate; a lower electrode disposed in the processing space; an upper electrode disposed in the processing space and disposed on top of the lower electrode; a plasma source that excites a process gas supplied to the processing space and generates plasma between the upper electrode and the lower electrode to process the substrate; And, a first coil disposed in the upper space of the housing; a second coil disposed in the upper space of the housing and disposed outside the first coil; a magnetic induction field power supply unit that supplies current to each of the first coil and the second coil so that the induced magnetic field generated from each of the first coil and the second coil is generated up to the upper electrode; a shielding cover formed to cover the upper part of the housing and forming an arrangement space inside where the first coil and the second coil are disposed; A first magnetic field sensor that measures the induced magnetic field of the first coil generated by the shielding cover; a second magnetic field sensor that measures the induced magnetic field of the second coil generated from the shielding cover; a first coil transporter coupled to the first coil and transporting the first coil within the arrangement space; a second coil transporter coupled to the second coil and transporting the second coil within the arrangement space; And, receiving the intensity of the induced magnetic field for the first coil from the first magnetic field sensor, sending a movement signal to the first coil carrier until the intensity of the input induced magnetic field approaches the preset induced magnetic field, Controls the position of the coil, receives the intensity of the induced magnetic field for the second coil from the second magnetic field sensor, and moves to the second coil carrier until the intensity of the received induced magnetic field approaches the preset induced magnetic field. An induced magnetic field power supply unit that sends a signal to control the position of the first coil; A self-regulating unit comprising: Includes.

The present invention has the effect of uniformly controlling the thickness of the plasma sheath by controlling the intensity of the electric field generated in the processing space.

The effects of the present invention are not limited to the effects described above, and those skilled in the art will understand that other effects not mentioned can be derived from the configurations used in the specification and drawings below.

1 is a plan view schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a side cross-sectional view of the process chamber according to the embodiment of FIG. 1 as viewed from the side.
Figure 3 is an induced magnetic field distribution diagram in a state where the current flowing in the second coil is less than the current flowing in the first coil.
Figure 4 is an induced magnetic field distribution diagram in a state where the current flowing in the second coil is larger than the current flowing in the first coil.
5 is a side cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.
Figure 6 is an induced magnetic field distribution diagram in a state where the current flowing in the second coil is less than the current flowing in the first coil and the third coil.
Figure 7 is an induced magnetic field distribution diagram in a state where the current flowing in the second coil is larger than the current flowing in the first coil and the second coil.
8 is a side cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.
9 is a side cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.
10 is a front cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.

Hereinafter, embodiments for carrying out the present invention will be described with reference to the accompanying drawings. In this case, when a part is said to "include" a certain element throughout the specification, this means unless specifically stated to the contrary. Rather than controlling other components, it is considered to mean that other components can be included. In addition, terms such as "...part" used in the specification refer to a unit that processes at least one function or operation when describing electronic hardware or electronic software, and when describing a mechanical device, one part, function, It is considered to mean a purpose, point or driving element. In addition, hereinafter, the same or similar components will be described using the same reference numerals, and overlapping descriptions of the same components will be omitted.

1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1, the substrate processing apparatus 1 according to an embodiment of the present invention includes a load port 10, an atmospheric pressure transfer module 20, a vacuum transfer module 30, a load lock chamber 40, and a process. It may include a chamber 50.

The load port 10 may be placed on one side of the normal pressure transfer module 20, which will be described later. At least one load port 10 may be disposed on one side of the normal pressure transfer module 20. The number of load ports 10 may increase or decrease depending on process efficiency and footprint conditions.

Container (F) can be placed in load port (10). The container (F) is loaded into the load port (10) by a transfer means (not shown) such as an Overhead Transfer Apparatus (OHT), an Overhead Conveyor, or an Automatic Guided Vehicle, or by an operator. It can be loaded into or unloaded from the load port 10. The container F may include various types of containers depending on the type of article being stored. The container (F) may be an airtight container such as a front opening unified pod (FOUP).

The normal pressure transfer module 20 and the vacuum transfer module 30 may be arranged along the first direction 2. Here, the first direction (2) forms a right angle to the second direction (4), and the plane including the first direction (2) and the second direction (4) is defined as a plane parallel to the ground. Additionally, the direction perpendicular to the plane including the first direction (2) and the second direction (4) will be defined as the third direction (6). In addition, the side including the second direction (4) and the third direction (6) is defined as the front side, and the side including the first direction (2) and the third direction (6) is defined as the left side. A six-sided view will be defined based on the front, the plane, and the left side. In this case, the terms upper and lower will be explained based on the third direction (6) perpendicular to the plane.

The normal pressure transfer module 20 can transfer the substrate W between the container F and the load lock chamber 40, which will be described later. According to one embodiment, the normal pressure transfer module 20 withdraws the substrate (W) from the container (F) and returns it to the load lock chamber 40, or removes the substrate (W) from the load lock chamber 40 to the container. It can be returned inside (F).

The normal pressure transfer module 20 may include a transfer frame 220 and a first transfer robot 240. The transport frame 220 may be disposed between the load port 10 and the load lock chamber 40. A load port 10 may be connected to the transport frame 220. The internal atmosphere of the transport frame 220 can be maintained at normal pressure. According to one embodiment, the interior of the transport frame 220 may be created in an atmospheric pressure atmosphere.

A conveyance rail 230 is disposed on the conveyance frame 220. The longitudinal direction of the transport rail 230 may be horizontal to the longitudinal direction of the transport frame 220. The first transfer robot 240 may be located on the transfer rail 230.

The first transfer robot 240 may transfer the substrate W between the container F mounted on the load port 10 and the load lock chamber 40, which will be described later. The first transfer robot 240 can move forward and backward in the second direction 4 along the transfer rail 230. The first transport robot 240 can move in a vertical direction (eg, third direction 6). The first transfer robot 240 has a first transfer hand 242 that moves forward, backward, or rotates on a horizontal plane. The substrate W is placed on the first transfer hand 242. The first transfer robot 240 may have a plurality of first transfer hands 242. The plurality of first transfer hands 242 may be arranged to be spaced apart from each other in the vertical direction.

The vacuum transfer module 30 may be disposed between the load lock chamber 40 and the process chamber 50, which will be described later. The vacuum transfer module 30 may include a transfer chamber 320 and a second transfer robot 340.

The internal atmosphere of the transfer chamber 320 may be maintained at vacuum pressure. A second transfer robot 340 may be placed in the transfer chamber 320. For example, the second transfer robot 340 may be placed in the center of the transfer chamber 320. The second transfer robot 340 transfers the substrate W between the load lock chamber 40 and the process chamber 50, which will be described later. Additionally, the second transfer robot 340 may transfer the substrate W between the process chambers 50 .

The second transport robot 340 may move along a vertical direction (eg, third direction 6). The second transfer robot 340 may have a second transfer hand 342 that moves forward, backward, or rotates on a horizontal plane. The substrate W is placed on the second transfer hand 342. The second transfer robot 340 may have a plurality of second transfer hands 342. The plurality of second transfer hands 342 may be arranged to be spaced apart from each other along the vertical direction.

At least one process chamber 50, which will be described later, may be connected to the transfer chamber 320. According to one embodiment, the transfer chamber 320 may have a polygonal shape. A load lock chamber 40 and a process chamber 50, which will be described later, may be disposed around the transfer chamber 320. For example, as shown in FIG. 1, a hexagonal transfer chamber 320 is disposed in the center of the vacuum transfer module 30, and a load lock chamber 40 and a process chamber 50 are disposed along the periphery. You can. Unlike the above, the shape of the transfer chamber 320 and the number of process chambers 50 may be changed in various ways according to user requirements or process requirements.

The load lock chamber 40 may be disposed between the transport frame 220 and the transfer chamber 320. The load lock chamber 40 has a buffer space in which the substrate W is exchanged between the transport frame 220 and the transfer chamber 320. For example, the substrate W on which predetermined processing has been completed in the process chamber 50 may temporarily stay in the buffer space of the load lock chamber 40. Additionally, the substrate W that has been withdrawn from the container F and is scheduled to be processed may temporarily stay in the buffer space of the load lock chamber 40.

As described above, the internal atmosphere of the transfer frame 220 may be maintained at atmospheric pressure, and the internal atmosphere of the transfer chamber 320 may be maintained at vacuum pressure. Accordingly, the load lock chamber 40 is disposed between the transport frame 220 and the transfer chamber 320, so that its internal atmosphere can be switched between atmospheric pressure and vacuum pressure.

Process chamber 50 is connected to transfer chamber 320. There may be a plurality of process chambers 50. The process chamber 50 may be a chamber that performs a predetermined process on the substrate W. According to one embodiment, the process chamber 50 may process the substrate W using plasma. For example, the process chamber 50 may perform an etching process to remove a thin film on the substrate W using plasma, an ashing process to remove a photoresist film, and a deposition process to form a thin film on the substrate W. , it may be a chamber that performs a dry cleaning process, an ALD process (Atomic Layer Deposition) for depositing an atomic layer on a substrate, or an ALE process (Atomic Layer Etching) for etching an atomic layer on a substrate. However, the present invention is not limited to this, and the plasma treatment process performed in the process chamber 50 may be variously modified to known plasma treatment processes.

FIG. 2 is a side cross-sectional view of the process chamber according to the embodiment of FIG. 1 viewed from the side. Referring to FIG. 2 , the process chamber 50 according to one embodiment may perform plasma processing on the substrate W. The process chamber 50 includes a housing 500, a support unit 600, a gas supply unit 700, a shower head unit 800, and a self-regulating unit.

The housing 500 may have a sealed interior. The housing 500 has a processing space 501 therein for processing the substrate W. The processing space 501 may be maintained in a substantially vacuum atmosphere while processing the substrate W. The material of the housing 500 may include metal. According to one embodiment, the material of the housing 500 may include aluminum. Housing 500 may be grounded.

A semi-inlet (not shown) may be formed on one side wall of the housing 500. The inlet (not shown) functions as a space through which the substrate W is brought in or out of the processing space 501 . The entrance (not shown) may be selectively opened and closed by a door assembly (not shown).

An exhaust hole 530 may be formed on the bottom of the housing 500. The exhaust hole 530 is connected to the exhaust line 540. A pressure reducing member, not shown, may be installed in the exhaust line 540. The pressure reducing member (not shown) may be any of the known pumps that provide negative pressure. Process gas and process impurities supplied to the processing space 501 may be discharged from the processing space 501 through the exhaust hole 530 and the exhaust line 540 sequentially. Additionally, the pressure of the processing space 501 can be adjusted by a pressure reducing member (not shown) providing negative pressure.

An exhaust baffle 550 may be disposed on the upper side of the exhaust hole 530 to ensure more uniform exhaust discharge to the processing space 501. The exhaust baffle 550 may be located between the side wall of the housing 500 and the support unit 600, which will be described later. When viewed from above, the exhaust baffle 550 may have a generally ring shape. At least one baffle hole 552 may be formed in the exhaust baffle 550. The baffle hole 552 may penetrate the upper and lower surfaces of the exhaust baffle 550. Process gas and process impurities in the processing space 501 may flow into the exhaust hole 530 and the exhaust line 540 through the baffle hole 552.

The support unit 600 is disposed inside the housing 500. Support unit 600 may be disposed within processing space 501 . The support unit 600 may be arranged to be spaced a certain distance upward from the bottom surface of the housing 500. The support unit 600 supports the substrate W. The support unit 600 may include an electrostatic chuck that adsorbs the substrate W using electrostatic force. In contrast, the support unit 600 may support the substrate W using various methods such as vacuum adsorption or mechanical clamping. Hereinafter, the support unit 600 including an electrostatic chuck will be described as an example.

The support unit 600 may include an electrostatic chuck 610, an insulating plate 650, and a lower cover 660.

The electrostatic chuck 610 supports the substrate (W). The electrostatic chuck 610 may include a dielectric plate 620 and a base plate 630. The dielectric plate 620 is located at the upper end of the support unit 600. The dielectric plate 620 may be a disk-shaped dielectric substance. A substrate (W) is placed on the upper surface of the dielectric plate 620. According to one embodiment, the upper surface of the dielectric plate 620 may have a smaller radius than the substrate (W). When the substrate W is placed on the top surface of the dielectric plate 620, an edge area of the substrate W may be located outside the dielectric plate 620.

An electrode 621 and a heater 622 are disposed inside the dielectric plate 620. According to one embodiment, the electrode 621 may be located above the heater 622 inside the dielectric plate 620. The electrode 621 is electrically connected to the first power source 621a. The first power source 621a may include a direct current power source. A first switch 621b is installed between the electrode 621 and the first power source 621a. When the first switch 621b is turned on, the electrode 621 is electrically connected to the first power source 621a, and direct current flows through the electrode 621. Electrostatic force acts between the electrode 621 and the substrate (W) due to the current flowing through the electrode 621. Accordingly, the substrate W is adsorbed to the dielectric plate 620.

The heater 622 is electrically connected to the second power source 622a. A second switch 622b is installed between the heater 622 and the second power source 622a. When the second switch 622b is turned on, the heater 622 may be electrically connected to the second power source 622a. The heater 622 may generate heat by resisting the current supplied from the second power source 622a. Heat generated by the heater 622 is transferred to the substrate W via the dielectric plate 620. The substrate W placed on the dielectric plate 620 can be maintained at a predetermined temperature by the heat generated by the heater 622. The heater 622 may include a spiral-shaped coil. Additionally, the heater 622 may include a plurality of coils. Although not shown, a plurality of coils may be provided in different areas of the dielectric plate 620, respectively. For example, a coil for heating the central area of the dielectric plate 620 and a coil for heating the edge area may be respectively embedded in the dielectric plate 620, and the degree of heat generation between the coils may be independently adjusted. In the above example, the heater 622 is located inside the dielectric plate 620 as an example, but it is not limited thereto. For example, the heater 622 may not be located inside the dielectric plate 620.

At least one first flow path 623 may be formed inside the dielectric plate 620. The first flow path 623 may be formed from the top surface of the dielectric plate 620 to the bottom surface of the dielectric plate 620. The first flow path 623 communicates with the second flow path 633, which will be described later. When viewed from above, the first flow path 623 may be formed at a distance from each other in the central area of the dielectric plate 620 and the edge area surrounding the dielectric plate 620. The first flow path 623 functions as a passage through which a heat transfer medium, which will be described later, is supplied to the bottom of the substrate W.

The base plate 630 is located below the dielectric plate 620. The base plate 630 may have a disk shape. The upper surface of the base plate 630 may be formed to be stepped so that the center area is located higher than the edge area. The central region of the upper portion of the base plate 630 may have an area corresponding to the bottom of the dielectric plate 620. The central region of the top surface of the base plate 630 may be bonded to the bottom surface of the dielectric plate 620. A ring member 640, which will be described later, may be located on the upper side of the edge area of the base plate 630.

The base plate 630 may include a conductive material. For example, the material of the base plate 630 may include aluminum. The base plate 630 may be a metal plate. For example, the entire area of the base plate 630 may be a metal plate. The base plate 630 may be electrically connected to the third power source 630a. The third power source 630a may be a high frequency power source that generates high frequency power. For example, the high frequency power may be RF power. The RF power source may be a high bias power RF power source. The base plate 630 receives high frequency power from the third power source 630a. Because of this, the base plate 630 can function as an electrode that generates an electric field. According to one embodiment, the base plate 630 may function as a lower electrode of a plasma source to be described later. However, it is not limited to this, and the base plate 630 may be grounded and function as a lower electrode.

A first circulation passage 632 and a second circulation passage 634 may be located inside the base plate 630. Additionally, a second flow path 633 may be formed inside the base plate 630.

The first circulation passage 632 may be a passage through which a heat transfer medium circulates. The first circulation passage 632 may have a spiral shape. The first circulation passage 632 is in fluid communication with the second passage 633, which will be described later. Additionally, the first circulation flow path 632 is connected to the first supply source 632a through the first supply line 632c.

A heat transfer medium is stored in the first supply source 632a. The heat transfer medium may include an inert gas. According to one embodiment, the heat transfer medium may include helium (He) gas. However, it is not limited to this, and the heat transfer medium may include various types of gases or liquids. The heat transfer medium may be a fluid supplied to the lower surface of the substrate W to resolve temperature unevenness of the substrate W while plasma processing is performed on the substrate W. In addition, while performing plasma processing on the substrate W, the heat transfer medium transfers the heat transferred from the plasma to the substrate W from the substrate W to the dielectric plate 620 and the ring member 640 to be described later. It can act as a delivery medium.

A first valve 632b is installed in the first supply line 632c. The first valve 632b may be an open/close valve. The heat transfer medium may be selectively supplied to the first circulation passage 632 according to the opening and closing of the first valve 632b.

The second flow path 633 fluidly communicates the first circulation flow path 632 and the first flow path 623. The heat transfer medium supplied to the first circulation passage 632 may be supplied to the bottom of the substrate W through the second passage 633 and the first passage 623 sequentially.

The second circulation passage 634 may be a passage through which cooling fluid circulates. The second circulation passage 634 may have a spiral shape. Additionally, the second circulation passage 634 may be arranged so that ring-shaped passages with different radii share the same center. The second circulation flow path 634 is connected to the second supply source 634a through the second supply line 634c.

Cooling fluid is stored in the second supply source 634a. For example, the cooling fluid may be provided as coolant. A cooler (not shown) may be provided in the second supply source 634a. A cooler (not shown) may cool the cooling fluid to a predetermined temperature. However, unlike the above-described example, a cooler (not shown) may be installed in the second supply line 634c.

A second valve 634b is installed in the second supply line 634c. The second valve 634b may be an open/close valve. Cooling fluid may be selectively supplied to the second circulation passage 634 according to the opening and closing of the second valve 634b. Cooling fluid is supplied to the second circulation passage 634 through the second supply line 634c. The cooling fluid flowing through the second circulation passage 634 may cool the base plate 630. The substrate W may be cooled together via the base plate 630.

The ring member 640 is disposed at the edge area of the electrostatic chuck 610. According to one example, the ring member 640 may be a focus ring. The ring member 640 has a ring shape. Ring member 640 is disposed along the perimeter of dielectric plate 620. For example, the ring member 640 may be disposed above the edge area of the base plate 630.

The upper surface of the ring member 640 may be formed to be stepped. According to one embodiment, the inner upper surface of the ring member 640 may be located at the same height as the upper surface of the dielectric plate 620. Additionally, the inner upper surface of the ring member 640 may support the lower surface of the edge area of the substrate W located outside the dielectric plate 620. The outer upper surface of the ring member 640 may surround the side surface of the edge area of the substrate W.

An insulating plate 650 is located below the base plate 630. The insulating plate 650 may include an insulating material. The insulating plate 650 electrically insulates the base plate 630 and the lower cover 660, which will be described later. The insulating plate 650 may have a generally disk shape when viewed from above. The insulating plate 650 may have an area corresponding to the base plate 630.

The lower cover 660 is located below the insulating plate 650. The lower cover 660 may have a cylindrical shape with an open top when viewed from above. The upper surface of the lower cover 660 may be covered with an insulating plate 650. A lift pin assembly 670 that raises and lowers the substrate W may be located in the inner space of the lower cover 660.

The lower cover 660 may include a plurality of connection members 662. The connecting member 662 may connect the outer surface of the lower cover 660 and the inner wall of the housing 500 to each other. The plurality of connection members 662 may be arranged to be spaced apart along the circumferential direction of the lower cover 660. The connection member 662 supports the support unit 600 inside the housing 500. Additionally, the connection member 662 may be connected to the grounded housing 500 to ground the lower cover 660.

The connecting member 662 may have a hollow shape with a space therein. A first power line 621c connected to the first power source 621a, a second power line 622c connected to the second power source 622a, and a third power line 630c connected to the third power source 630a. , the first supply line 632c connected to the first circulation passage 632, and the second supply line 634c connected to the second circulation passage 634, etc., form a space formed inside the connection member 662. It extends to the outside of the housing 500.

The gas supply unit 700 supplies process gas to the processing space 501. The gas supply unit 700 may include a gas supply nozzle 710, a gas supply line 720, and a gas source 730.

The gas supply nozzle 710 may be installed in the central area of the upper surface of the housing 500. An injection hole is formed on the bottom of the gas supply nozzle 710. An injection hole (not shown) may inject process gas into the interior of the housing 500. In this embodiment, the gas supply nozzle 710 is

One end of the gas supply line 720 is connected to the gas supply nozzle 710. The other end of the gas supply line 720 is connected to the gas supply source 730. Gas source 730 may store process gas. The process gas may be a gas excited into a plasma state by a plasma source described later. According to one embodiment, the process gas may include NH3, NF3, and/or an inert gas.

A gas valve 740 is installed in the gas supply line 720. The gas valve 740 may be an on-off valve. Process gas may be selectively supplied to the processing space 501 according to the opening and closing of the gas valve 740.

The plasma source excites the process gas supplied into the housing 500 into a plasma state. The plasma source according to one embodiment of the present invention uses capacitively coupled plasma (CCP). However, the process gas supplied to the processing space 501 may be excited into a plasma state using inductively coupled plasma (ICP) or microwave plasma. Hereinafter, a case where capacitively coupled plasma (CCP) is used as a plasma source according to an embodiment will be described as an example.

The plasma source may include an upper electrode and a lower electrode. The upper electrode and the lower electrode may be disposed to face each other inside the housing 500. One of the two electrodes may apply high-frequency power, and the other electrode may be grounded. In contrast, high frequency power may be applied to both electrodes. An electric field is formed in the space between the two electrodes, and the process gas supplied to this space can be excited into a plasma state. A substrate processing process is performed using plasma. According to one embodiment, the upper electrode may be the electrode plate 830 described later, and the lower electrode may be the base plate 630 described above.

The shower head unit 800 is located above the support unit 600 inside the housing 500. The shower head unit 800 may include a shower plate 810 and a support portion 820.

The shower plate 810 is located on the upper side of the support unit 600, opposite to the support unit 600. The shower plate 810 may be positioned to be spaced downward from the ceiling surface of the housing 500. According to one embodiment, the shower plate 810 may have a disk shape with a constant thickness. The shower plate 810 is arranged to be spaced a certain distance downward from the ceiling surface of the housing 500, and a space may be formed between the shower plate 810 and the ceiling surface of the housing 500. Additionally, a plurality of holes 811 are formed in the shower plate 810. The plurality of holes 811 disperse and pass the process gas supplied from the gas supply nozzle 710.

Additionally, the material of the shower plate 810 may include metal. Shower plate 810 may be grounded. In this embodiment, the shower plate 810 is used as an upper electrode. However, in the present invention, the shower plate 810 is not limited to being used only as an upper electrode, and of course, the upper electrode may be installed as a separate electrode member.

The support part 820 supports the side of the shower plate 810 and the side of the electrode plate 830, respectively. The top of the support portion 820 is connected to the ceiling surface of the housing 500, and the lower portion of the support portion 820 is connected to the side of the shower plate 810 and the side of the electrode plate 830, respectively. The material of the support portion 820 may include non-metal.

The self-adjusting unit 900 is disposed in the upper space of the housing 500 and generates an induced magnetic field to attract the plasma sheath formed near the edge of the shower plate 810 used as the upper electrode to uniformly form the entire plasma sheath. I do it.

In this embodiment, the self-adjusting unit 900 includes a first coil 910, a second coil 920, an induced magnetic field power supply unit 930, and a shielding cover 940.

The first coil 910 is disposed on the upper part of the housing 500. In this embodiment, the first coil 910 is placed on top of the gas supply nozzle 710, and can be modified and placed in various positions as needed. Additionally, the first coil 910 is formed in a circular ring shape. In this case, the cross-section of the first coil 910 may be formed in a rectangular shape. Additionally, the first coil 910 is formed to have a height greater in the third direction 6 than its width in the side direction. However, the shape and arrangement position of the first coil 910 in the present invention are not limited to the above examples, and of course, it can be modified into various shapes and arrangements. In addition, the first coil 910 receives current through the induced magnetic field power supply unit 930 and generates an induced magnetic field in the shower plate 810 used as the upper electrode.

The second coil 920 is disposed in the upper space of the housing 500. In this case, the second coil 920 is formed in a circular ring shape and has a larger diameter than the first coil 910. Additionally, the cross-section of the second coil 920 is formed in a rectangular shape, and the cross-sectional area is smaller than that of the first coil 910. In addition, the second coil 920 receives current through the induced magnetic field power supply unit 930 and generates an induced magnetic field in the shower plate 810 used as the upper electrode. In this case, the induced magnetic field generated in the second coil 920 overlaps with the induced magnetic field generated in the first coil 910 and amplifies the intensity of the induced magnetic field.

The induced magnetic field power supply unit 930 is electrically connected to each of the first coil 910 and the second coil 920. The induced magnetic field power supply unit 930 supplies power to the first coil 910 and the second coil 920 with a preset current value so that the first coil 910 and the second coil 920 generate an induced magnetic field. I do it. In this case, the induced magnetic field power supply unit 930 sets the amount of current flowing in the first coil 910 and the current flowing in the second coil 920 to be different, so that the amount of current flowing in the first coil 910 and the second coil 920 is set to be different. The size of the induced magnetic field is controlled.

The shielding cover 940 is formed in a box shape that covers the upper space of the housing 500, and forms an arrangement space on the inside. Additionally, the first coil 910 and the second coil 920 are accommodated in the arrangement space formed inside the shielding cover 940. Additionally, the shielding cover 940 is made of a metal material capable of shielding magnetic fields. This shielding cover 940 shields the induced magnetic fields generated from the first coil 910 and the second coil 920 from affecting other semiconductor manufacturing facilities.

Here, further referring to FIG. 3, FIG. 3 is an induced magnetic field distribution diagram in a state where the current flowing in the second coil 920 is less than the current flowing in the first coil 910, and FIG. 4 is a diagram showing the induced magnetic field distribution in the second coil 920. This is an induced magnetic field distribution diagram in which the current flowing is larger than the current flowing in the first coil 910.

As shown in FIG. 3, when the current flowing in the second coil 920 is less than the current flowing in the first coil 910, the induced magnetic field generated by the first coil 910 and the second coil 920 ) is formed in a state where the magnitude of the induced magnetic field flowing through the field is similar. Accordingly, the thickness of the plasma sheath formed near the edge of the shower plate 810, which is the upper electrode, is formed to a lower thickness than the thickness of the plasma sheath formed near the center.

On the other hand, as shown in FIG. 4, when the current flowing in the second coil 920 is large and flowing in the first coil 910, the induced magnetic field generated by the second coil 920 is generated by the first coil ( 910) is formed to a size larger than the induced magnetic field flowing through the magnetic field. As a result, the induced magnetic field flowing in the second coil 920 pulls the plasma sheath formed near the edge of the shower plate 810 upward, increasing the thickness of the plasma sheath. Accordingly, the thickness of the plasma sheath formed near the edge of the shower plate 810, which is the upper electrode, increases by the thickness of the plasma sheath formed near the center. By using the self-adjusting unit 900 in this way, it is possible to uniformly adjust the thickness of the plasma sheath formed in the entire area of the shower plate 810, which is the upper electrode.

5 is a side cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.

Referring further to FIG. 5 , in a substrate processing apparatus according to another embodiment of the present invention, the self-regulating unit 900 described above further includes a third coil 950.

The third coil 950 is disposed in the upper space of the housing 500. In this case, the second coil 920 is formed in a circular ring shape and has a larger diameter than the second coil 920. Additionally, the third coil 950 has a rectangular cross-sectional shape and a cross-sectional area larger than that of the second coil 920. Additionally, the third coil 950 receives current through the induced magnetic field power supply unit 930 and generates an induced magnetic field in the shower plate 810 used as the upper electrode. In this case, the induced magnetic field generated in the third coil 950 overlaps with the induced magnetic field generated in the second coil 920 and amplifies the intensity of the induced magnetic field. In particular, because the intensity of the induced magnetic field in the second coil 920 is amplified by the induced magnetic field generated in the first coil 910, the size of the magnetic field can be further increased. Additionally, the third coil 950 is formed at a higher position than the second coil 920 and lower than the first coil 910. In this case, the third coil 950 is formed at a higher position than the second coil 920. In this case, the third coil 950 is formed at a higher position than the second coil 920. The direction of the induced magnetic field generated in the second coil 920 is adjusted so that the direction of the induced magnetic field generated in the second coil 920 is directed toward the edge of the upper electrode. Accordingly, the third coil 950 can adjust the magnitude of the induced magnetic field generated in the second coil 920 by adjusting the amount of current, and the direction of the induced magnetic field generated in the second coil 920 can be adjusted.

Here, further referring to FIG. 6, FIG. 6 is an induced magnetic field distribution diagram in a state where the current flowing in the second coil 920 is less than the current flowing in the first coil 910 and the third coil 950, and FIG. 7 is a This is an induced magnetic field distribution diagram in which the current flowing in the second coil 920 is greater than the current flowing in the first coil 910 and the second coil 920.

As shown in FIG. 6, when the current flowing in the second coil 920 is made smaller than the current flowing in the first coil 910 and the third coil 950, the current formed by the second coil 920 The induced magnetic field does not affect the plasma sheath of the shower plate 810, which is the upper electrode.

However, as shown in FIG. 7, when the current flowing in the second coil 920 is made larger than the first coil 910 and the third coil 950, the induction formed by the second coil 920 The intensity of the magnetic field is greater than the intensity of the induced magnetic field formed by the first coil 910 and the intensity of the induced magnetic field formed by the third coil 950. In this case, the induced magnetic field formed by the third coil 950 is not only the strength of the induced magnetic field formed by the second coil 920, but also the direction in which the induced magnetic field is formed is toward the edge of the shower plate 810. is formed. That is, the third coil 950 controls the intensity and direction of the induced magnetic field generated in the second coil 920.

Accordingly, by using the self-adjusting unit 900 further including the third coil 950, the thickness of the plasma sheath formed in the entire area of the shower plate 810, which is the upper electrode, can be uniformly adjusted. , the thickness of the plasma sheath can be adjusted more precisely by controlling the direction of the induced magnetic field generated in the second coil 920.

Meanwhile, the present invention shields the space between the above-described first coil 910, the second coil 920, and the third coil 950, respectively, so that the first coil 910, the second coil 920, and the third coil ( 950), the thickness of the plasma sheath formed near the edge of the upper electrode can be adjusted by adjusting the density of the area where each induced magnetic field overlaps.

Accordingly, with further reference to FIG. 8, FIG. 8 is a side cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.

As shown in FIG. 8, in the substrate processing apparatus according to another embodiment of the present invention, the self-adjusting unit 900 described above further includes a vertical shield 960.

The vertical shield 960 is composed of a plurality of pieces, and is arranged vertically between the first coil 910 and the second coil 920, and is arranged vertically between the second coil 920 and the third coil 950. . Additionally, each vertical shield 960 may be formed in a circular ring shape. Additionally, a portion of the vertical shielding body 960 is connected to the shielding cover 940. Additionally, the vertical shield 960 may be configured to be combined with the gas supply nozzle 710. In addition, the vertical shield 960 is made of a metal material and can be magnetized by the first coil 910, the second coil 920, and the third coil 950 to change each induced magnetic field.

Also, with further reference to FIG. 9, FIG. 9 is a side cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.

As shown in FIG. 9 , in the substrate processing apparatus according to another embodiment of the present invention, the above-described self-adjusting unit 900 further includes a horizontal shield 970.

The horizontal shield 970 is composed of a plurality of pieces and is horizontally disposed between the first coil 910 and the second coil 920, and is horizontally disposed between the second coil 920 and the third coil 950. . Additionally, each horizontal shield 970 may be formed in a circular ring shape. Additionally, a portion of the vertical shielding body 960 is connected to the shielding cover 940. Additionally, the horizontal shield 970 may be configured to be combined with the gas supply nozzle 710. In addition, the horizontal shield 970 is made of a metal material and can be magnetized by the first coil 910, the second coil 920, and the third coil 950 to change each induced magnetic field.

In this way, when using the self-adjusting unit 900 that further includes the vertical shield 960 and the horizontal shield 970, the thickness of the plasma sheath formed in the entire area of the shower plate 810, which is the upper electrode, can be uniformly adjusted. In addition, the thickness of the plasma sheath can be more precisely controlled by controlling the density of the induced magnetic field between each coil.

10 is a front cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.

Referring further to FIG. 10, a substrate processing device according to another embodiment of the present invention includes a first magnetic field sensor 981, a second magnetic field sensor 982, a first coil transfer body 983, and a second coil transfer body. It further includes (984) and a position control unit (985).

The first magnetic field sensor 981 is coupled to communicate with the shielding cover 940, measures the strength of the magnetic field generated in the first coil 910, and transmits it to the induced magnetic field power supply unit 930.

The second magnetic field sensor 982 is coupled to communicate with the shielding cover 940, measures the strength of the magnetic field generated in the second coil 920, and transmits it to the induced magnetic field power supply unit 930.

The first coil transfer element 983 is coupled to the first coil 910 and moves the position of the first coil 910 in three-dimensional space. This first coil transporter 983 is connected to the first coil supporter 983a, which is coupled to the first coil 910, and is connected to the first coil supporter 983a to form the first coil supporter 983a. It consists of a first coil transfer actuator 983b that moves the coil 910. Here, the structure of the first coil support 983a is not limited to the shape shown in the drawing, and of course, it can be modified into various shapes that can be combined with the first coil 910. Additionally, the first coil transfer actuator 983b may be configured with a linear actuator using a ball screw and a motor installed in each axis direction. However, in the present invention, the configuration of the first coil transfer actuator 983b is not limited to the ball screw type, and the position of the first coil 910 is an actuator using a lead screw or a timing belt. It can be controlled by selectively using an actuator using an actuator or an actuator using a rack & pinion, and of course, it can be modified and implemented in various position control methods, such as a method using a linear motor. In addition, the first coil carrier 983 is disposed on the outside of the housing 500 to minimize the influence of the induced magnetic field generated by the first coil 910 and the second coil 920, so that it is damaged by the induced magnetic field. It is formed so that it does not happen.

The second coil transfer element 984 is coupled to the second coil 920 and moves the position of the second coil 920 in three-dimensional space. This second coil transfer member 984 includes a second coil support 984a coupled to the second coil 920, and a second coil support 984a connected to the second coil support 984a. It consists of a second coil transfer actuator 984b that moves the coil 920. The structure of the second coil support 984a is not limited to the shape shown in the drawings, and of course, it can be modified into various shapes that can be combined with the second coil 920. Additionally, the second coil transfer actuator 984b may be configured with a linear actuator using a ball screw and a motor installed in each axis direction. However, in the present invention, the configuration of the second coil transfer actuator 984b is not limited to the ball screw type, and the location of the second coil 920 is the lead screw, timing belt, and rack. It can be moved by selectively using a rack & pinion, etc., and of course, it can be modified and implemented in various position control methods, such as a method using a linear motor. The second coil carrier 984 is disposed on the outside of the housing 500 to minimize the influence of the induced magnetic field generated by the first coil 910 and the second coil 920 to prevent it from being damaged by the induced magnetic field. is formed

In addition, although not shown in the drawings, it is of course possible to move the coils in three-dimensional space by attaching a transporter (not shown) to the third coil 950 described above in the manner of moving the coils as described above.

The position control unit 985 receives the intensity of the induced magnetic field measured by the first magnetic field sensor 981, and moves to the first coil transfer element 983 until the intensity of the input induced magnetic field approaches the preset induced magnetic field. A signal is sent to control the position of the first coil 910. In a similar manner, the position control unit 985 receives the intensity of the induced magnetic field measured by the second magnetic field sensor 982, and operates the second coil carrier ( A movement signal is sent to 984) to control the position of the second coil 920.

Therefore, when using the self-adjusting unit 900 that further includes the first coil transporter 983, the second coil transporter 984, and the position control unit 985, the first coil 910 and the second coil By controlling the position of 920, the thickness of the plasma sheath formed in the entire area of the shower plate 810, which is the upper electrode, can be adjusted to a desired shape depending on the process situation.

As described above, the present invention has been described with specific details such as specific components and limited embodiments and drawings, but this is only provided to facilitate a more general understanding of the present invention, and the present invention is not limited to the above embodiments. , those skilled in the art can make various modifications and variations from this description.

Therefore, the spirit of the present invention should not be limited to the described embodiments, and the scope of the patent claims described below as well as all things that are equivalent or equivalent to the scope of the claims will be said to fall within the scope of the spirit of the present invention. .

10: load port
20: Normal pressure transfer module
30: Vacuum transfer module
40: Load lock chamber
50: Process chamber
500: housing
600: support unit
700: Gas supply unit
800: Shower head unit
812: Through hole
900: self-regulating unit
910: first coil
920: 2nd coil
930: Induced magnetic field power supply unit
940: Shielding cover
950: Third coil
960: Vertical shielding body
970: Horizontal shielding body
981: First magnetic field sensor
982: Second magnetic field sensor
983: First coil transfer body
984: Second coil conveyor
985: Position control unit

Claims (10)

A housing having a processing space for processing a substrate;
a lower electrode disposed in the processing space;
an upper electrode disposed in the processing space and disposed on top of the lower electrode;
a plasma source that excites a process gas supplied to the processing space and generates plasma between the upper electrode and the lower electrode to process the substrate; and
a magnetic control unit disposed on the upper part of the housing and generating an induced magnetic field to control the plasma sheath of the upper electrode; A substrate processing device comprising:
According to paragraph 1,
The self-regulating unit,
a first coil disposed in the upper space of the housing;
a second coil disposed in the upper space of the housing and disposed outside the first coil; and,
an induced magnetic field power supply unit that supplies current to each of the first coil and the second coil so that the induced magnetic field generated from each of the first coil and the second coil is generated up to the upper electrode; Including, a substrate processing device.
According to paragraph 2,
The induced magnetic field power supply unit generates a larger current supplied to the second coil than the current supplied to the first coil.
According to paragraph 2,
The self-regulating unit,
a third coil disposed outside the second coil and generating an induced magnetic field by receiving current from the induced magnetic field power supply unit; A substrate processing device further comprising:
According to clause 4,
The first coil, the second coil, and the third coil are formed in a ring shape,
The diameter of the third coil is larger than the diameter of the first coil and the second coil,
A substrate processing apparatus wherein the diameter of the second coil is formed to be larger than the diameter of the first coil.
According to clause 4,
A substrate processing apparatus wherein the height of the third coil is located between the height of the first coil and the height of the second coil.
According to clause 4,
The induced magnetic field power supply unit generates a larger current supplied to the second coil than the current supplied to the first coil and the third coil.
According to clause 4,
A substrate processing apparatus in which the induced magnetic field generated in the first coil, the induced magnetic field generated in the second coil, and the induced magnetic field generated in the third coil are formed by overlapping with each other.
According to clause 4,
The self-regulating unit,
a shielding body selectively formed in an area between the first coil and the second coil and an area between the second coil and the third coil; A substrate processing device further comprising:
A housing having a processing space for processing a substrate;
a lower electrode disposed in the processing space;
an upper electrode disposed in the processing space and disposed on top of the lower electrode;
a plasma source that excites a process gas supplied to the processing space and generates plasma between the upper electrode and the lower electrode to process the substrate; and,
a first coil disposed in the upper space of the housing; a second coil disposed in the upper space of the housing and disposed outside the first coil; a magnetic induction field power supply unit that supplies current to each of the first coil and the second coil so that the induced magnetic field generated from each of the first coil and the second coil is generated up to the upper electrode; a shielding cover formed to cover the upper part of the housing and forming an arrangement space inside where the first coil and the second coil are disposed; A first magnetic field sensor that measures the induced magnetic field of the first coil generated by the shielding cover; a second magnetic field sensor that measures the induced magnetic field of the second coil generated from the shielding cover; a first coil transporter coupled to the first coil and transporting the first coil within the arrangement space; a second coil transporter coupled to the second coil and transporting the second coil within the arrangement space; And, receiving the intensity of the induced magnetic field for the first coil from the first magnetic field sensor, sending a movement signal to the first coil carrier until the intensity of the input induced magnetic field approaches the preset induced magnetic field, Controls the position of the coil, receives the intensity of the induced magnetic field for the second coil from the second magnetic field sensor, and moves to the second coil carrier until the intensity of the received induced magnetic field approaches the preset induced magnetic field. An induced magnetic field power supply unit that sends a signal to control the position of the first coil; A self-regulating unit comprising: A substrate processing device comprising:

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