KR20230031676A - Substrate supporting unit, apparatus for processing substrate including the same, and ring transfer method - Google Patents

Abstract

According to the present invention, provided is a substrate processing device. According to one embodiment of the present invention, the substrate processing device comprises: a process chamber having a processing space therein; a substrate support unit for supporting a substrate within the processing space; a gas supply unit for supplying process gas to the processing space; and a plasma source for generating plasma from the process gas. The substrate support unit includes: a support plate having the plate placed thereon; a first ring provided to surround the substrate placed on the support plate; a second ring provided below the first ring, and having a through hole formed therein; and a ring lift pin assembly for lifting and lowering the first and second rings. The ring lift pin assembly includes: a ring lift pin provided to be inserted into the through hole, and lifting and lowering the first and second rings; and a driving unit for driving the ring lift pin. The ring lift pin can be provided to lift and lower the first ring at a first position where the ring lift pin overlaps the through hole when viewed from an upper part, and to lift and lower the second ring at a second position where the ring lift pin overlaps the second ring and is deviated from the first position when viewed from the upper part. Therefore, the height of a process chamber can be minimized.

Description

Substrate support unit, substrate processing apparatus having the same, and ring transfer method

The present invention relates to a substrate support unit, a substrate processing apparatus having the same, and a ring transport method.

Plasma refers to an ionized gaseous state composed of ions, radicals, and electrons. Plasma is generated by very high temperatures, strong electric fields, or RF Electromagnetic Fields. A semiconductor device manufacturing process may include an etching process of removing a thin film formed on a substrate such as a wafer using plasma. The etching process is performed when ions and/or radicals of the plasma collide with or react with the thin film on the substrate.

An apparatus for processing a substrate using plasma has a process chamber, a support assembly for supporting a substrate in the process chamber, and a plasma source for generating plasma from a gas that processes the substrate. The support assembly includes an electrostatic chuck that fixes the substrate with electrostatic force and a focus ring that surrounds an outer circumference of the substrate seated on the electrostatic chuck. The focus ring distributes plasma with high uniformity on the substrate surface. When the substrate is repeatedly etched, the focus ring is also etched together, and thus the shape of the focus ring gradually changes. As the shape of the focus ring changes, the direction in which ions and/or radicals are incident on the substrate changes, and thus etching characteristics of the substrate change.

Therefore, when the etching process for the substrate is repeatedly performed, or when the shape of the focus ring is changed and is outside the permissible range, the focus ring needs to be replaced. In general, replacement of the focus ring is performed by a worker opening a process chamber, taking out a used focus ring from the open process chamber, and mounting an unused focus ring to the process chamber.

However, this replacement method not only takes a lot of work time, but also has a high possibility of introducing particles into the process chamber. Therefore, in recent years, a transfer robot of a substrate processing apparatus has taken the used focus ring out of the process chamber and brought it into a ring pod, and then the transfer robot has taken a new focus ring out of the ring pod and brought it into the process chamber. use the method

The transport of the focus ring is performed by a transport robot that transports the substrate. The support assembly is provided with a lift pin for lifting the focus ring from or seating the focus ring to the support assembly for conveyance of the focus ring. Multiple focus rings are provided as needed. When a plurality of focus rings are provided, the structure of a lift pin for lifting or lowering the focus rings determines the ease of transportation, the transportation time, the height of the process chamber, and the like.

An object of the present invention is to provide a substrate support unit capable of easily transporting a plurality of focus rings, a substrate processing apparatus having the same, and a ring transport method.

Another object of the present invention is to provide a substrate support unit capable of minimizing the height of a process chamber, a substrate processing apparatus having the same, and a ring transfer method.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the description below.

The present invention provides a substrate processing apparatus. In one embodiment, a substrate processing apparatus includes a process chamber having a processing space therein; a substrate support unit for supporting a substrate within the processing space; a gas supply unit supplying a process gas to the processing space; and a plasma source generating plasma from a process gas, wherein the substrate support unit includes: a support plate on which a substrate is placed; a first ring provided to surround the substrate placed on the support plate; a second ring provided below the first ring and having a through hole; and a ring lift pin assembly that lifts and lowers the first ring and the second ring, wherein the ring lift pin assembly is inserted into the through hole and includes a ring lift pin that lifts and lowers the first ring and the second ring; It includes a drive unit for driving the ring lift pin, and the ring lift pin raises and lowers the first ring at a first position where the ring lift pin overlaps the through hole when viewed from above, and when viewed from the top, the ring lift pin It overlaps with the second ring and may be provided to raise and lower the second ring at a second position out of the first position.

In one embodiment, the bottom surface of the first ring and the top surface of the second ring may be placed on the substrate support unit so as to be in contact with each other.

In one embodiment, the ring lift pin assembly further includes a cylindrical body extending downward from the ring lift pin and having a cross section wider than that of the ring lift pin, a driving unit provided to rotate the body, and a center of the body It may be provided offset from the center of the ring lift pin.

In one embodiment, the driving unit includes a rotating ring whose inner diameter is provided to come into contact with the outer diameter of the body; It may include a driving device that provides rotational force to the rotating ring or body.

In one embodiment, a friction member may be provided on the outer diameter of the body and the inner diameter of the rotating ring.

In one embodiment, the outer diameter of the body and the inner diameter of the rotating ring may be provided with teeth meshing with each other.

In one embodiment, the drive unit includes an annular rotation ring provided to surround the body; a driving device providing rotational force to the rotating ring or body; A link member for transmitting rotational force between the rotating ring and the body may be included.

In one embodiment, a transfer unit carrying the first ring and the second ring into and out of the process chamber; The controller further includes a controller that controls the driving unit and the transfer unit, wherein the controller moves the first ring up and down from the support plate by a first height at the first position when the ring lift pin is transferred to the outside of the process chamber. Then, the driving unit and the conveying unit may be controlled so that the conveying unit removes the first ring from the ring lift pin.

In one embodiment, the controller transports the second ring out of the process chamber after the transport unit transports the first ring out of the process chamber, and upon transporting the second ring, the ring in the first position. Control the driving unit and the conveying unit so that the conveying unit removes the second ring from the ring lift pin after the lift pin is lowered and the ring lift pin is moved to the second position to lift the second ring from the support plate by the second height. can

In one embodiment, the top of the ring lift pin may be tapered.

In addition, the present invention provides a substrate support unit. In one embodiment, the substrate support unit includes a support plate on which a substrate is placed; a first ring provided to surround the substrate placed on the support plate; A ring lift pin assembly provided under the first ring and including a second ring having a through hole formed therein and lifting and lowering the first ring and the second ring, wherein the ring lift pin assembly is provided to be inserted into the through hole a ring lift pin that lifts and lowers the first ring and the second ring; A drive unit for rotating the ring lift pin between a first position and a second position, wherein the first position is a position where the ring lift pin corresponds to the through hole when viewed from above, and the second position is a position when viewed from above The ring lift pin overlaps the second ring but is out of the first position, and the ring lift pin may be provided to raise and lower the first ring at the first position and to raise and lower the second ring at the second position. .

In one embodiment, the bottom surface of the first ring and the top surface of the second ring may be placed on the substrate support unit so as to be in contact with each other.

In one embodiment, the ring lift pin assembly further includes a cylindrical body extending downward from the ring lift pin and having a cross section wider than that of the ring lift pin, a driving unit provided to rotate the body, and a center of the body It may be provided offset from the center of the ring lift pin.

In one embodiment, the driving unit includes a rotating ring whose inner diameter comes into contact with the outer diameter of the body and is provided so that the rotational force of the body is transmitted; It may include a driving device that provides rotational force to the body.

In one embodiment, a transfer unit carrying the first ring and the second ring into and out of the process chamber; The controller further includes a controller that controls the driving unit and the transfer unit, wherein the controller moves the first ring up and down from the support plate by a first height at the first position when the ring lift pin is transferred to the outside of the process chamber. Then, the driving unit and the conveying unit may be controlled so that the conveying unit removes the first ring from the ring lift pin.

In one embodiment, the controller transports the second ring out of the process chamber after the transport unit transports the first ring out of the process chamber, and upon transporting the second ring, the ring in the first position. Control the driving unit and the conveying unit so that the conveying unit removes the second ring from the ring lift pin after the lift pin is lowered and the ring lift pin is moved to the second position to lift the second ring from the support plate by the second height. can

In one embodiment, the top of the ring lift pin may be tapered.

In addition, the present invention provides a ring conveying method. In one embodiment, when conveying the first ring and the second ring to the outside of the process chamber, the first ring and the second ring are sequentially conveyed, but the ring lift pin is at the first position to remove the first ring from the support plate. After lifting by the first height, the first ring is removed from the ring lift pin, and then, the ring lift pin is lowered and moved to the second position, and at the second position, the second ring is lifted from the support plate by the second height The second ring can be removed from the ring lift pin.

In one embodiment, the ring lift pin may be provided rotatably between a first position and a second position.

In one embodiment, the ring lift pin may be rotated by the body eccentric from the center of the ring lift pin.

According to one embodiment of the present invention, it is possible to easily transport a plurality of focus rings.

In addition, the present invention can minimize the height of the process chamber.

The effects of the present invention are not limited to the above-mentioned effects, and effects not mentioned will be clearly understood by those skilled in the art from this specification and the accompanying drawings.

1 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram schematically showing a state of a first conveying hand of FIG. 1 .
FIG. 3 is a diagram schematically showing a state of a first ring conveying hand of FIG. 1 .
FIG. 4 is a diagram schematically showing the appearance of the second ring conveying hand of FIG. 1 .
5 is a cross-sectional plan view showing the appearance of the load lock chamber of FIG. 1;
FIG. 6 is a view showing a state in which a substrate is placed on the support shelf of FIG. 5 .
FIG. 7 is a view showing a state in which a first ring is placed on the support shelf of FIG. 5 .
8 is a view showing a state in which a second ring is placed on the support shelf of FIG. 5 .
FIG. 9 is a view showing how the ring carrier is unloaded from the load lock chamber in the support shelf of FIG. 5 .
FIG. 10 is a diagram schematically showing an embodiment of the process chamber of FIG. 1 .
FIG. 11 is an enlarged view of the driving unit of FIG. 10 .
12 shows a view from above of a rotating ring and a ring lift pin according to an embodiment of the present invention.
13 to 14 each show a view from above of a rotating ring and a ring lift pin according to another embodiment of the present invention.
15 to 35 are views sequentially showing how the ring member of the present invention is replaced, respectively.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited due to the examples described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shapes of components in the drawings are exaggerated to emphasize a clearer description.

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 1 to 35 .

1 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1 , a substrate processing apparatus 1 according to an embodiment of the present invention includes a load port 10, an atmospheric pressure transfer module 20, a vacuum transfer module 30, a load lock chamber 40, and a process chamber. (50) may be included.

The load port 10 may be disposed on one side of the normal pressure transfer module 20 to be described later. One or a plurality of load ports 10 may be provided. The number of load ports 10 may increase or decrease depending on process efficiency and footprint conditions. A container (F) according to an embodiment of the present invention may be placed in the load port (10). The container F is transported by a transport means (not shown) such as an Overhead Transfer Apparatus (OHT), an overhead conveyor, or an Automatic Guided Vehicle, or a load port 10 by an operator. It can be loaded into or unloaded from the load port (10). The container (F) may include various types of containers according to the type of goods to be stored. As the container F, an airtight container such as a front opening unified pod (FOUP) may be used.

Various items may be accommodated in the container F. The container (F) may include various types of containers according to the type of goods to be stored. For example, an object to be processed in the substrate processing apparatus 1 may be stored in the first container F1, which is one of the containers F. The object to be processed may be a substrate W such as a wafer. The first container (F1) may be provided with a support slot (F11) in which the substrate (W) is seated.

In addition, a ring member R (see FIG. 6 ) mounted on the substrate processing apparatus 1 and requiring replacement may be accommodated in the second container F2, which is another one of the containers F. The ring member R may be a focus ring or a dielectric ring installed in the process chamber 50 to be described later. In one example, the ring member R includes a first ring R1 and a second ring R2 having larger inner and outer diameters than the first ring R1.

A support slot in which the ring member is seated may be provided in the second container F2. Optionally, the ring member R and the ring carrier 60 supporting the ring member R may be accommodated in the second container F2 (see FIG. 7 ). A support slot F22 in which the ring carrier 60 is seated may be provided in the second container F2. The outer circumferential diameter of the ring member R may have a larger diameter than the outer circumferential diameter of the substrate W. Thus, the space within the second container (F2) may have a slightly larger volume than the space within the first container (F1).

The normal pressure transfer module 20 and the vacuum transfer module 30 may be arranged along the first direction 2 . Hereinafter, when viewed from above, a direction perpendicular to the first direction (2) is defined as a second direction (4). In addition, a direction perpendicular to the plane including both the first direction (2) and the second direction (4) is defined as the third direction (6). Here, the third direction 6 is a direction perpendicular to the ground.

The normal pressure transfer module 20 may selectively transport the substrate W or the ring member R between the container F and the load lock chamber 40 to be described later. For example, the normal pressure transfer module 20 takes out the substrate W from the container F and transfers it to the load lock chamber 40 or takes out the substrate W from the load lock chamber 40 and transfers it to the container F ) can be returned. The normal pressure transfer module 20 may include a transfer frame 220 and a first transfer robot 240 . The transport frame 220 may be provided between the load port 10 and the load lock chamber 40 . That is, the load port 10 may be connected to the transport frame 220 . The transport frame 220 may be provided with normal pressure inside. The inside of the transport frame 220 may be maintained in an atmospheric pressure atmosphere.

A first transfer robot 240 may be provided in the transfer frame 220 . The first transport robot 240 may selectively transport the substrate W or the ring member R between the container F seated in the load port 10 and the load lock chamber 40 to be described later. The first transfer robot 240 may move in a vertical direction. The first transfer robot 240 may have a first transfer hand 242 that moves forward, backward or rotates on a horizontal plane. One or a plurality of first transfer hands 242 of the first transfer robot 240 may be provided. In one example, a plurality of first transfer hands 242 are provided. A substrate W may be placed on the first transfer hand 242 . Optionally, a ring carrier 60 to be described below supporting the ring member R may be placed on the first transfer hand 242 . The first transfer robot 240 and the ring carrier 60 supporting the ring member R are the ring member R between the container F, the normal pressure transfer module 20, and the load lock chamber 40 to be described later. It can be defined as a conveying assembly that conveys.

FIG. 2 is a diagram schematically showing a state of a first conveying hand of FIG. 1 . Referring to FIG. 2 , at least one substrate support pad 244 may be provided on the upper surface of the first transfer hand 242 . For example, three substrate support pads 244 may be provided to support the substrate placed on the first transfer hand 242 at three points. The substrate support pad 244 can prevent the substrate W placed on the first transfer hand 242 from slipping. When viewed from above, the substrate support pads 244 may be arranged along the circumferential direction of an imaginary circle having one radius. The substrate support pad 244 may be provided in a generally disc shape. A vacuum adsorption hole (not shown) may be formed inside the substrate support pad 244 . The substrate support pad 244 may transfer the substrate W by adsorbing the substrate W by vacuum.

Referring back to FIG. 1 , the vacuum transfer module 30 may be disposed between a load lock chamber 40 to be described later and a process chamber 50 to be described later. The vacuum transfer module 30 may include a transfer chamber 320 and a second transfer robot 340 .

An internal atmosphere of the transfer chamber 320 may be maintained as a vacuum pressure atmosphere. A second transfer robot 340 may be provided in the transfer chamber 320 . For example, the second transfer robot 340 may be located in the center of the transfer chamber 320 . The second transport robot 340 may selectively transport the substrate W or the ring member R between the load lock chamber 40 and the process chamber 50 . Optionally, the vacuum transfer module 30 may transfer the substrate W between the process chambers 50 . The second transfer robot 340 can move in horizontal and vertical directions. The second transfer robot 340 may have a second transfer hand 342 that moves forward, backward or rotates on a horizontal surface. At least one second transfer hand 342 of the second transfer robot 340 may be provided.

3 and 4 are diagrams showing the appearance of the second transfer hand of FIG. 1, respectively. Referring to FIGS. 3 and 4 , the second transfer hand 342 may have a relatively larger size than the first transfer hand 242 . The second transfer hand 342 is provided to transfer at least one of the substrate W and the ring member R.

In one example, the second conveying hand 342 has a first ring conveying hand 3421 shown in FIG. 3 and a second ring conveying hand 3423 shown in FIG. 4 . The first ring delivery hand 3421 is provided to transport a first ring R1 described later, and the second ring delivery hand 3423 is provided to transport a second ring R2 described later. In one example, the first ring conveying hand 3421 and the second conveying hand 3423 may be connected via a rotating shaft. The first ring conveying hand 3421 and the second conveying hand 3423 may be rotated around the rotation axis. In one example, the second ring (R2) is provided with a larger outer diameter and inner diameter than the first ring (R1).

On the upper surface of the first ring conveying hand 3421, a pair of first conveying pads 3421a, a pair of second conveying pads 3421b, a pair of third conveying pads 3421c, and a pair of fourth A transport pad 3421d may be provided. The second transport pad 3421b and the third transport pad 3421c may be disposed between the first transport pad 3421a and the fourth transport pad 3421d. The second transport pad 3421b and the third transport pad 3421c may be disposed inside the outer circumference of the substrate W when viewed from above. Accordingly, the second transport pad 3421b and the third transport pad 3421c may support the substrate W. When viewed from above, the first transport pad 3421a and the fourth transport pad 3421d are disposed outside the outer circumference of the substrate W and the inner circumference of the first ring R1, and It can be placed inside rather than outside. Accordingly, the first transport pad 3421a and the fourth transport pad 3421d may support the first ring R1.

On the upper surface of the second ring conveying hand 3423, there are a pair of first conveying pads 3423a, a pair of second conveying pads 3423b, a pair of third conveying pads 3423c, and a pair of fourth conveying pads 3423c. A transport pad 3423d may be provided. The second transport pad 3423b and the third transport pad 3423c may be disposed between the first transport pad 3423a and the fourth transport pad 3423d. When viewed from above, the second transport pad 3423b and the third transport pad 3423c may be disposed inside the outer circumference of the substrate W. Accordingly, the second transport pad 3423b and the third transport pad 3423c may support the substrate W. When viewed from above, the first transport pad 3423a and the fourth transport pad 3423d are disposed outside the outer circumference of the substrate W and the inner circumference of the second ring R2, It can be placed inside rather than outside. Accordingly, the first transport pad 3423a and the fourth transport pad 3423d may support the second ring R1.

In the above example, the two-transfer hand 342 has been described as having the first ring transfer hand 3421 shown in FIG. 3 and the second ring transfer hand 3423 shown in FIG. A pair of first transport pads 3423a, a pair of second transport pads 3423b, and a pair of third transport pads 3423c shown in FIG. , and a pair of fourth transport pads 3423d may be additionally provided.

Referring back to FIG. 1 , at least one process chamber 50 to be described below may be connected to the transfer chamber 320 . The transfer chamber 320 may be provided in a polygonal shape. A load lock chamber 40 and a process chamber 50 may be disposed around the transfer chamber 320 . For example, as shown in FIG. 1, a hexagonal transfer chamber 320 is disposed at the center of the vacuum transfer module 30, and a load lock chamber 40 and a process chamber 50 are disposed around it. . However, the shape of the transfer chamber 320 and the number of process chambers may be variously modified and provided according to user needs.

The load lock chamber 40 may be disposed between the transfer frame 220 and the transfer chamber 320 . The load lock chamber 40 provides a buffer space between the transport frame 220 and the transfer chamber 320 in which the substrate W or ring member R is exchanged. For example, in order to replace the ring member R disposed in the process chamber 50 , the ring member R used in the process chamber 50 may temporarily stay in the load lock chamber 40 . For example, in order to transfer a new ring member R scheduled to be replaced to the process chamber 50 , the new ring member R may temporarily stay in the load lock chamber 40 .

As described above, an internal atmosphere of the transfer frame 220 may be maintained as an atmospheric pressure atmosphere, and an internal atmosphere of the transfer chamber 320 may be maintained as a vacuum pressure atmosphere. The load lock chamber 40 is disposed between the transport frame 220 and the transfer chamber 320 so that its internal atmosphere can be switched between an atmospheric pressure atmosphere and a vacuum pressure atmosphere.

5 is a cross-sectional plan view showing the appearance of the load lock chamber of FIG. 1; FIG. 6 is a view showing a state in which a substrate is placed on the support shelf of FIG. 5 . FIG. 7 is a view showing a state in which a first ring is placed on the support shelf of FIG. 5 . 8 is a view showing a state in which a second ring is placed on the support shelf of FIG. 5 .

FIG. 9 is a view showing a state in which the ring carrier is unloaded from the load lock chamber in the support shelf of FIG. 5 .

5 to 9 , the load lock chamber 40 may include a housing 420 and a support shelf 440 . The housing 420 may have an inner space in which the substrate W or the ring member R is placed. The housing 420 may be disposed between the transfer frame 220 and the transfer chamber 320 . In addition, a first opening 422 and a second opening 423 may be formed in the housing 420 . The first opening 422 is provided on a surface facing the transport frame 220 and can be opened and closed by a gate valve (not shown). The second opening 423 is provided on a surface facing the transfer chamber 320 and can be opened and closed by a gate valve (not shown).

A gas supply hole 424 for supplying gas to the inner space 421 of the housing 420 may be formed in the housing 420 . The gas may be an inert gas. For example, the gas may be a gas containing nitrogen, argon, or the like. However, it is not limited thereto, and the gas may be variously modified and provided as a known inert gas.

A decompression hole 425 for depressurizing the inner space 421 of the housing 420 may be formed in the housing 420 . The decompression hole 425 may be connected to a decompression member (not shown). The pressure reducing member may be a pump. However, it is not limited thereto, and the depressurizing member may be variously modified as a known device for depressurizing the inner space 421 .

As the gas supply hole 424 and the decompression hole 425 are formed in the housing 420, the pressure in the inner space 421 of the housing 420 may be switched between atmospheric pressure and vacuum pressure.

A support shelf 440 may be provided in the inner space 421 . The support shelf 440 may support the substrate W or the ring member R in the inner space 421 . At least one support shelf 440 may be provided. Optionally, a plurality of support shelves 440 may be provided. For example, three support shelves 440 may be provided. When viewed from above, the plurality of support shelves 440 may be spaced apart from each other. The plurality of support shelves 440 may be vertically spaced apart from each other. Due to this, the substrate W or the ring member R can be supported in multiple layers in the inner space 421 .

Each support shelf 440 may have a support protrusion 442 . When viewed from above, the support protrusion 442 may be disposed at a position aligned with a notch 621 formed in the ring carrier 60 to be described later. When viewed from the cross-section, the support protrusion 442 may have a generally 'b' shape. The support protrusion 442 may include a first shelf pad 444 , a second shelf pad 446 , and a third shelf pad 448 .

The first shelf pad 444, the second shelf pad 446, and the third shelf pad 448 may be made of a material having frictional properties with respect to the substrate W or the ring member R. For example, the first shelf pad 444, the second shelf pad 446, and the third shelf pad 448 may be made of a material such as poly-ether-ether-ketone (PEEK) filled with carbon. can However, this is only an example, and may be variously modified with other known materials having similar properties.

When viewed from the top, the first shelf pad 444 may generally have an arc shape in its longitudinal direction. The first shelf pad 444 may be disposed closer to the pressure reducing hole 425 than the second shelf pad 446 . When viewed from above, the first shelf pad 444 may be disposed inside the outer circumference of the substrate W. As a result, as shown in FIG. 6 , the first shelf pad 444 can support the substrate W among the substrate W and the ring member R.

When viewed from the top, the second shelf pad 446 may generally have an arc shape in its longitudinal direction. The second shelf pad 446 may be disposed farther from the pressure reducing hole 425 than the first shelf pad 444 . When viewed from above, the second shelf pad 446 is disposed outside the outer circumference of the substrate W and the inner circumference of the first ring R1, but may be disposed inside the outer circumference of the first ring R1. there is. As a result, as shown in FIG. 7 , the second shelf pad 446 can support the first ring R1.

When viewed from above, the third shelf pad 448 may generally have an arc shape in its longitudinal direction. The third shelf pad 448 may be disposed farther from the pressure reducing hole 425 than the second shelf pad 446 . When viewed from the top, the third shelf pad 448 is disposed outside the inner circumference of the second ring R2, but may be disposed inside the outer circumference of the second ring R2. Accordingly, as shown in FIG. 8 , the third shelf pad 448 can support the second ring R2.

Referring to FIG. 9 , the ring carrier 60 has a plate 620 and a notch 621 . The ring carrier 60 may be used to transport the ring member R. The ring carrier 60 may be used to transport the ring member R by the first transport robot 240 or the second transport robot 340 . For example, the ring carrier 60 may be used to transport the ring member R between the normal pressure transport module 20 and the load lock chamber 40 by the first transport robot 240 . Hereinafter, a case in which the ring member R is transported by the first transport robot 240 will be described as an example. The ring carrier 60 may be housed in the container F. For example, the ring carrier 60 may be housed in the second container F2. In this case, the ring carrier 60 may be accommodated below the ring member R accommodated in the second container F2.

A ring member R may be placed on the upper surface of the plate 620 . The plate 620 may have a plate shape. The plate 620 may have a circular plate shape. For example, the plate 620 has a larger diameter than the diameter of the ring member R. Since the plate 620 is provided in a circular plate shape, the ring member R can be stably supported and transported on the plate 620 . A central region of the plate 620 may be provided as a blocking plate in which no hole is formed. Optionally, a through hole for weight reduction of the plate 620 may be formed in a central region of the plate 620 .

A plurality of notches 621 may be formed in an edge region of the plate 620 . A plurality of notches 621 may be provided in an edge region of the plate 620 . The notch 621 is formed to penetrate from the upper surface to the lower surface of the plate 620 . The notch 621 may be formed in an edge region of the plate 620 and may be formed in an edge region including an outer circumference of the plate 620 . That is, the notch 621 may be formed to extend from an edge region of the plate 620 to an outer circumference of the plate 620 . When viewed from above, the notches 621 may be formed at positions aligned with support shelves 440 provided in the load lock chamber 40 . In addition, the notches 621 may be formed at positions overlapping support slots F22 provided in the second container F2 when viewed from above. This prevents the ring carrier 60 from interfering with the support shelf 440 or/and the support slots F22 when the ring member R is transported using the ring carrier 60 .

When viewed from the top, the plurality of support protrusions 442 are disposed at positions aligned with the plurality of notches 621 formed on the ring carrier 60. Therefore, as shown in FIG. 9, the ring carrier 60 on which the ring member R is placed is carried into the load lock chamber 40 at a position higher than the support protrusion 442 by the first transfer hand 242, When the first transfer hand 242 moves downward, the ring member R is placed on the support protrusion 442, and the ring carrier 60 is moved downward while being placed on the first transfer hand 242. can

Referring back to FIG. 1 , the transfer chamber 320 may be connected to one or more process chambers 50 . A plurality of process chambers 50 may be provided. The process chamber 50 may be a chamber for performing a process on the substrate (W). The process chamber 50 may be a plasma chamber that processes the substrate W using plasma. For example, the process chamber 50 may perform an etching process of removing a thin film on the substrate W using plasma, an ashing process of removing a photoresist film, and a deposition process of forming a thin film on the substrate W. , or may be a chamber for performing a dry cleaning process. However, it is not limited thereto, and the plasma treatment process performed in the process chamber 50 may be variously modified into a known plasma treatment process.

FIG. 10 is a diagram schematically showing an embodiment of the process chamber of FIG. 1 . Referring to FIG. 10 , the process chamber 50 may process the substrate W by delivering plasma to the substrate W.

The process chamber 50 may include a housing 510 , a gas supply unit 530 , a plasma source, and a substrate support unit 520 .

The housing 510 provides a processing space in which a substrate processing space is performed. The housing 510 may be provided in a sealed shape. When processing the substrate W, the processing space of the housing 510 may be maintained in a substantially vacuum atmosphere. The housing 510 may be made of a metal material. For example, the housing 510 may be made of aluminum. Housing 510 may be grounded. A carrying inlet 512 through which the substrate W and the ring member R are carried in or taken out may be formed on one side of the housing 510 . The intake port 512 may be selectively opened and closed by the gate valve 514 .

An exhaust hole 516 may be formed on the bottom surface of the housing 510 . The exhaust line 560 may be connected to the exhaust hole 516 . The exhaust line 560 may exhaust process gas, process by-products, and the like supplied to the processing space of the housing 510 to the outside of the housing 510 through the exhaust hole 516 . An exhaust baffle 552 may be provided above the exhaust hole 516 to more uniformly exhaust the processing space. When viewed from the top, the exhaust baffle 552 may have a generally ring shape. In addition, at least one hole may be formed in the exhaust baffle 552 .

The gas supply unit 530 supplies process gas to the processing space of the housing 510 . The gas supply unit 530 may include a gas supply nozzle 532 , a gas supply line 534 , and a gas supply source 536 . In one example, the gas supply nozzle 532 may be installed in the central portion of the upper surface of the housing 510 . An injection hole is formed on the bottom of the gas supply nozzle 532 . The nozzle supplies process gas into the housing 510 . The gas supply line 534 connects the gas supply nozzle 532 and the gas supply source 536 . The gas supply line 534 supplies process gas stored in the gas supply source 536 to the gas supply nozzle 532 . A valve 538 is installed in the gas supply line 534 . The valve 538 may open and close the gas supply line 534 to adjust the flow rate of the process gas supplied through the gas supply line 534 .

The process chamber 50 may be provided as a Capacitively Coupled Plasma (CCP) device or as an Inductively Coupled Plasma (ICP) device. Hereinafter, a case in which the process chamber 50 is provided as a capacitively coupled plasma device will be described. However, unlike this, the process chamber 50 may be provided as an Inductively Coupled Plasma (ICP) device.

The process chamber 50 has an upper electrode and a lower electrode as a plasma source. According to an example, the upper electrode may be provided to the shower head unit 580 to be described later, and the lower electrode may be provided to the electrode 525 provided to the substrate support unit 520 . The upper electrode and the lower electrode may be vertically disposed parallel to each other inside the housing 510 . One of the two electrodes may apply high-frequency power, and the other electrode may be grounded. An electromagnetic field is formed in a space between both electrodes, and process gas supplied to the space may be excited into a plasma state. A substrate treatment process is performed using plasma. High-frequency power may be applied to the lower electrode, and the upper electrode may be grounded. Alternatively, high-frequency power may be applied to the upper electrode and the lower electrode, respectively. Due to this, an electromagnetic field is generated between the upper electrode and the lower electrode. The generated electromagnetic field excites the process gas provided inside the housing 510 into a plasma state.

The shower head unit 580 may include a gas dispensing plate 594 and a support part 596 . A certain space may be formed between the gas dispensing plate 594 and the upper surface of the housing 510 . The gas injection plate 594 may be provided in a plate shape having a constant thickness. A bottom surface of the gas distributing plate 594 may be anodized to prevent arc generation by plasma. A cross section of the gas injection plate 594 may have the same shape and cross section as that of the substrate support unit 520 . The gas injection plate 594 includes a plurality of through holes 593 . The gas spray plate 594 penetrates the upper and lower surfaces of the shower head 592 in a vertical direction. The gas dispensing plate 594 may include a metal material. The gas dispensing plate 594 may be electrically connected to the power source 592a. The power source 592a may be provided as a high frequency power source. Alternatively, the gas injection plate 594 may be electrically grounded.

The support part 596 supports the side of the gas injection plate 594 . The upper end of the support part 596 is connected to the upper surface of the housing 510, and the lower end is connected to the shower head 592 and the side of the gas dispensing plate 594. The support part 596 may include a non-metallic material.

The substrate support unit 520 supports the substrate W inside the housing 510 . Located. The substrate support unit 520 may be spaced apart from the bottom surface of the housing 510 upwardly. In one example, the substrate support unit 520 may be provided as an electrostatic chuck that adsorbs the substrate W using electrostatic force. Alternatively, the substrate support unit 520 may support the substrate W in various ways such as a vacuum adsorption method or mechanical clamping. The substrate support unit 520 is described as being provided as an electrostatic chuck.

In one example, the substrate support unit 520 includes a support plate 521, a cooling plate 522, an insulating plate 523, a base 524, a ring member R, a covering 521, and a substrate lift pin assembly 570. and a ring lift pin assembly 560 .

Hereinafter, the support plate 521 will be described as being provided as the dielectric plate 521 . The dielectric plate 521 is positioned at the upper end of the substrate support unit 520 . The dielectric plate 521 applies an electrostatic force to the substrate W by receiving external power. The dielectric plate 521 may be provided with a disk-shaped dielectric substance. A substrate W is placed on the upper surface of the dielectric plate 521 . In one example, the upper surface of the dielectric plate 521 has a smaller radius than the substrate W. When the substrate W is placed on the upper surface of the dielectric plate 521, the edge region of the substrate W is located outside the dielectric plate 521. An electrode 525 and a heater 526 are embedded in the dielectric plate 521 . The electrode 525 may be positioned above the heater 526 . The electrode 525 is electrically connected to a power source (not shown). The power source (not shown) may include a DC power source. An electrostatic force acts between the electrode 525 and the substrate W by the current applied to the electrode 525 . Accordingly, the substrate W is adsorbed to the dielectric plate 521 .

Heat generated by the heater 526 is transferred to the substrate W through the dielectric plate 521 . The substrate W may be maintained at a predetermined temperature by the heat generated by the heater 526 . The heater 526 may include a spiral coil. A plurality of heaters 526 are provided. The heaters 526 may be respectively provided in different regions of the dielectric plate 521 . For example, a heater 526 for heating a central region of the dielectric plate 521 and a heater 526 for heating an edge region of the dielectric plate 521 may be respectively provided, and these heaters 526 may be provided independently of each other. can be controlled

In the above example, it has been described that the heater 526 is provided within the dielectric plate 521 , but is not limited thereto, and the heater 526 may not be provided within the dielectric plate 521 .

The cooling plate 522 is positioned below the dielectric plate 521 . The cooling plate 522 may be provided in a disk shape. The cooling plate 522 may be made of a conductive material. For example, the cooling plate 522 may be made of aluminum. An upper central region of the cooling plate 522 may have an area corresponding to a lower surface of the dielectric plate 521 . A flow path 522a may be provided inside the cooling plate 522 . The passage 522a may be spirally formed inside the cooling plate 522 . The passage 522a may cool the cooling plate 522 . Cooling fluid may be supplied to the passage 522a. For example, the cooling fluid may be provided as cooling water. The cooling plate 522 may include a metal plate. According to one example, the entire area of the cooling plate 522 may be provided as a metal plate. The cooling plate 522 may be electrically connected to a power source (not shown). A power source (not shown) may be provided as a high frequency power source that generates high frequency power. The high frequency power may be provided as an RF power. The RF power may be provided as a high bias power RF power. The cooling plate 522 receives high frequency power from a power source (not shown). Due to this, the cooling plate 522 can function as an electrode. In one example, the cooling plate 522 may be provided grounded.

An insulating plate 523 is provided below the cooling plate 522 . The insulating plate 523 is provided with an insulating material and electrically insulates the cooling plate 522 from a base 524 to be described later. When viewed from above, the insulating plate 523 may be provided in a circular plate shape. The insulating plate 523 may have an area corresponding to that of the cooling plate 522 .

A base 524 is provided below the cooling plate 522 . The base 524 may be provided below the insulating plate 523 . When viewed from the top, the base 524 may be provided in a ring shape. A substrate lift pin assembly 570 to be described later and a ring lift pin assembly 560 to be described later may be positioned in the inner space of the base 524 .

The base 524 has a connecting member 524b. The connecting member 524b connects the outer surface of the base 524 and the inner wall of the housing 510 . A plurality of connecting members 524b may be provided on the outer surface of the base 524 at regular intervals. The connecting member 524b supports the substrate support unit 520 inside the housing 510 . In addition, the connecting member 524b is connected to the inner wall of the housing 510 so that the base 524 is electrically grounded. In addition, a power source (not shown) connected to the substrate support unit through the connecting member 524b may extend to the outside of the housing 510 .

The ring member R and the covering 521 are disposed on the edge area of the substrate support unit 520 . When viewed from the top, the ring member R has an annular shape. The ring member R serves to concentrate plasma onto the substrate W while processing the substrate W. In one example, the ring member R may be provided with a conductive material. In one example, the ring member R may be made of silicon (Si) or silicon carbide (SiC).

In one example, the ring member R includes a first ring R1 and a second ring R2. The first ring R1 has smaller inner and outer diameters than the second ring R2. The second ring R2 is provided below the first ring R1. On the substrate support unit 520, the lower surface of the first ring R1 and the upper surface of the second ring R2 are placed in contact with each other. In one example, when viewed from above, a portion of the second ring R2 is provided to overlap the first ring R1.

In one example, the first ring R1 may have a shape in which a height of an inner upper surface is lower than a height of an outer upper surface. The lower surface of the edge region of the substrate W may be placed on the inner upper surface of the first ring R1. In addition, the first ring R1 may have an upwardly inclined surface between an inner upper surface and an outer upper surface in a direction from the center of the substrate W toward the outside of the substrate W. Due to this, when the substrate W is placed on the inner upper surface of the first ring R1, even if the placement position is somewhat inaccurate, the substrate W slides along the inclined surface of the first ring R1 so that the first ring R1 ) can be properly placed on the inner upper surface of the

The covering 521 is placed on the outside of the ring member (R) to protect the outside of the ring member (R). In one example, the covering 521 is provided to surround the second ring R2. In one example, the covering 521 is provided with a quartz material whose surface is ion-reinforced to have improved corrosion resistance (plasma resistance).

The substrate lift pin assembly 570 may move the substrate W up and down. The substrate lift pin assembly 570 may include a lift pin 572 , a lifting plate 574 , and a pin driver 576 . Lift pins 572 may be coupled to lift plate 574 . The elevating plate 574 may move up and down by the pin driver 576 .

The ring lift pin assembly 560 may lift and lower the ring member R placed on the upper surface of the dielectric plate 521 . The ring lift pin assembly 560 includes a ring lift pin 561, a rotating ring 562, and a driving device 563.

The ring lift pin 561 raises and lowers the first ring R1 and the second ring R2. A body 564 extending from the ring lift pin 561 and having a cylindrical shape is provided below the ring lift pin 561 . Body 564 has a wider diameter than ring lift pin 561 .

The inner diameter of the rotating ring 562 is provided to come into contact with the outer diameter of the body 564 . Accordingly, the rotating ring 562 is provided to be rotatable together with the body 564 . When viewed from above, when the body 564 is rotated clockwise, the rotating ring 562 is rotated counterclockwise.

The driving device 563 moves the ring lift pin 561 in the vertical direction and rotates the ring lift pin 561 or the rotation ring 562 . In one example, the driving device 563 rotates the body 564 . As the body 564 rotates, the ring lift pin 561 rotates. The driving device 563 may be a cylinder or a motor using pneumatic or hydraulic pressure. However, it is not limited thereto, and the driving device 563 may be provided with various known devices capable of providing a driving force.

The ring lift pin 561 and the rotating ring 562 are provided inside the substrate support unit 520 . In one example, the ring lift pins 561 are provided to be movable in the vertical direction along pin holes formed in the cooling plate 522 and/or the insulating plate 523 . The rotating ring 562 is provided below the ring lift pin 561 . In one example, a plurality of ring lift pins 561 may be provided. For example, the ring lift pin 561 may be provided to support the ring member R at three points. Optionally, ring lift pins may be provided in greater numbers. When viewed from above, the ring lift pins 561 may be disposed so as not to overlap the heater 526 and the flow path 522a.

A through hole 525 is formed in the second ring R2. The ring lift pin 561 is provided to be inserted into the through hole 525 formed in the second ring R2. When viewed from above, the through hole 525 and the first ring R1 are provided to overlap. Accordingly, the ring lift pin 561 may move up and down the first ring R1 placed on top of the second ring R2.

FIG. 11 shows the appearance of the ring lift pin 561 and the rotating ring 562 while the substrate W is being processed in the process chamber 50 . In one example, while the substrate W is being processed, the top of the ring lift pin 561 may be positioned below the bottom of the first ring R1 as shown in FIG. 11 .

The center of the body 564 may be offset from the center of the ring lift pin 561 . That is, the center of rotation of the body 564 and the center of rotation of the ring lift pin 561 are eccentric. Accordingly, when the body 564 is rotated, the position of the ring lift pin 561 is changed as shown in FIG. 11 when viewed from above. In one example, the ring lift pin 561 is moved between a first position and a second position by rotation of the body 564 . In one example, the first position is a position where the ring lift pin 561 overlaps the through hole when viewed from above, and the second position is a position where the ring lift pin 561 overlaps the second ring R2 when viewed from above. It overlaps but is a position out of the first position.

The lower surface of the first ring R1 and the upper surface of the second ring R2 may be placed on the substrate support unit 520 to contact each other. The ring lift pin 561 raises and lowers the first ring R1 at the first position and raises and lowers the second ring R2 at the second position. When aligning the ring lift pin 561 to the first position or the second position, the ring lift pin 561 may deviate from the preset position and rise. In particular, when the ring lift pin 561 is not aligned in the first position, the ring lift pin 561 may not be inserted into the through hole 525 and thus the first ring R1 cannot be moved up and down. Accordingly, the upper end of the ring lift pin 561 of the present invention may be tapered. As the upper end of the ring lift pin 561 is inclined, the ring lift pin 561 can be easily inserted into the through hole 525 at the first position.

Figure 12 shows the body 564 and the rotating ring 562 according to an embodiment of the present invention viewed from the top, and Figs. 13 and 14 respectively show the body 564 and rotation according to another embodiment of the present invention. A top view of the ring 562 is shown.

Referring to FIG. 12 , a friction member 5641 may be provided on the outer diameter of the body 564 and the inner diameter of the rotating ring 562 . When the driving device 563 rotates the body 564 counterclockwise, the rotation ring 562 is rotated clockwise due to the frictional force of the friction member 5641 . In one example, three ring 562 lift pins 561 are provided, and a driving device 563 rotates the body 564 provided on one of the ring 562 lift pins 561 . The outer diameter of the plurality of bodies 564 and the inner diameter of the rotating ring 562 are provided so that they come into contact with each other, so that even when one body 564 is rotated, the other two bodies 564 simultaneously rotate by the same angle in the same direction. It can be.

Optionally, as shown in FIG. 13 , the outer diameter of the body 564 and the inner diameter of the rotating ring 562 may be provided with interlocking teeth 5622 . Alternatively, as shown in FIG. 14, the drive unit includes an annular rotation ring 562 provided to surround the body 564; a driving device 563 providing rotational force to the rotating ring 562 or body 564; A ring 562 that transmits rotational force between the rotating ring 562 and the body 564 may include a crank member 5624.

Hereinafter, with reference to Figs. 15 to 35, a method of conveying the ring member R will be described.

The ring member R may be replaced after the substrate W is processed or before processing a subsequent substrate W. In one example, after the substrate W is processed, the ring member R is replaced before a subsequent substrate W is loaded into the process chamber 50 .

15 to 16 show a process of transferring the substrate W to the outside of the process chamber 50 . After the substrate W is processed, as shown in FIG. 15, the lift pins 572 rise to lift the substrate W from the dielectric plates 521 (521), and the second transfer hand 342 It enters the inside of the process chamber 50 . The second transfer hand 342 is aligned in a position where the substrate W can be seated on the second transfer hand 342 . The second transfer hand 342 is aligned below the substrate W and lifts the substrate W from bottom to top.

The substrate W seated on the second transfer hand 342 is transferred to the outside of the process chamber 50 as shown in FIG. 16, and the lift pins 572 are located inside the substrate support unit 520. descend as much as possible The substrate W transported by the second transport hand 342 may be placed on the support shelf 440 as shown in FIG. 6 . Thereafter, the substrate W may be transported to the container F by the first transport robot 242 of FIG. 2 and stored therein.

After the substrate W is removed from the substrate support unit 520, the ring member R is replaced. In one example, the first ring R1 and the second ring R2 of the ring member R are sequentially conveyed to the outside of the process chamber 50 . Hereinafter, a case in which both the first ring R1 and the second ring R2 are replaced will be described as an example.

17 to 21 show a process for transporting the first ring R1 to the outside of the process chamber 50 . First, as shown in FIG. 17 , the body 564 is rotated so that the ring lift pin 561 is aligned in the first position. In the first position, the driving device 563 raises the ring lift pin 561 so as to protrude upward from the upper surface of the second ring R2, as shown in FIG. 18 .

When the ring lift pin 561 reaches a predetermined height, the second transfer hand 342 enters the inside of the process chamber 50 as shown in FIG. 19 . In one example, the second conveying hand 342 has a predetermined height between the first ring R1 and the dielectric plate 521, the first ring R1 and the dielectric plate 521. Provided at a height capable of lifting the first ring (R1) without interference of. Optionally, the second transfer hand 342 may enter the inside of the process chamber 50 while the ring lift pin 561 is raised. The second transfer hand 342 is aligned in a position where the first ring R1 can be seated on the second transfer hand 342 . The second conveying hand 342 is aligned below the first ring R1 and lifts the first ring R1 from bottom to top as shown in FIG. 20 .

As shown in FIG. 21 , after the first ring R1 is removed from the substrate support unit 520 , the ring lift pin 561 descends downward as shown in FIG. 22 . In one example, the ring lift pin 561 descends so that the upper end of the ring lift pin 561 is located at a lower level than the bottom surface of the second ring R2. Thereafter, the second ring R2 is transported. 23 to 27 show a process for transporting the second ring R2 to the outside of the process chamber 50 .

First, as shown in FIG. 23 , the body 564 is rotated so that the ring lift pin 561 is aligned in the second position. In the second position, the driving device 563 raises the ring lift pin 561 to a predetermined height as shown in FIG. 24 . When the ring lift pin 561 reaches a predetermined height, the second transfer hand 342 enters the process chamber 50 as shown in FIG. 25 . In one example, the predetermined height is the second conveying hand 342 between the second ring R2 and the dielectric plate 521, the second ring R2 and the dielectric plate 521 Provided at a height capable of lifting the second ring (R2) without interference.

Optionally, the second transfer hand 342 may enter the inside of the process chamber 50 while the ring lift pin 561 is raised. The second transfer hand 342 is aligned in a position where the second ring R2 can be seated on the second transfer hand 342 . The second conveying hand 342 is aligned below the second ring R2 and lifts the second ring R2 from bottom to top as shown in FIG. 26 . Then, as shown in FIG. 27 , the second conveying hand 342 conveys the second ring R2 to the outside of the process chamber 50 .

In one example, while the second ring (R2) hand 3423 is carrying the second ring (R2) out of the process chamber 50, the first ring (R1) hand 3421 is carrying the first ring (R1). is placed on the first ring (R1) hand 3421. The first ring R1 and the second ring R2 are transferred to the outside of the process chamber 50 and placed in the first ring R1 hand and the second ring R2 hand, respectively, as shown in FIG. 22 .

Alternatively, before the second ring R2 hand 3423 transfers the second ring R2 to the outside of the process chamber 50, the second transfer robot 340 (340) transfers the first ring R1 ) can be conveyed to the load lock chamber 40 as shown in FIG.

The first ring R1 and the second ring R2 are transferred to the load lock chamber 40 by the second transfer robot 340 as shown in FIGS. 7 and 8 , respectively. Thereafter, the first transport robot 240 removes the ring carrier 60 from the container and places it on the first transport hand 242 . The first transfer robot 240 moves to the load lock chamber 40 . The first transfer robot 240 moves from the bottom to the top at a position where the notch 621 formed in the first transfer hand 242 and the support protrusion 442 are aligned, as shown in FIG. 23 , the first transfer hand The first ring R1 or the second ring R2 is seated on the ring carrier 60 seated in 242 . In one example, the first ring R1 is seated on one of the first transport hands 242 and the second ring R2 is mounted on the other first transport hand 242 . The first transfer robot 240 transfers the first ring R1 and the second ring R2 to the load port 10 and stores them in the container F. Thereafter, the first transfer robot 240 carries out the new first ring R1' and the second ring R2' from the container F.

The replaced first ring R1' and the second ring R2' are seated on the ring carrier 60 on the first transfer hand 242. The first transfer robot 240 transfers the replaced first ring R1' and the second ring R2' to the load lock chamber 40, and then the second transfer robot 340 transfers the replaced load lock chamber ( 40) Take out the first ring R1' and the second ring R2'. The first ring R'1 and the second ring R2' are placed on the second transfer hand 342 and transferred to the process chamber 50. In one example, the first ring R1' may be placed on the first ring delivery hand 3421, and the second ring R2' may be placed on the second ring delivery hand 3423. The second transfer hand 342 sequentially carries the second ring R2' and the first ring R1' into the process chamber 50.

First, as shown in FIG. 28, when the second ring R2' is seated on the dielectric plate 521, the second transfer hand 342 moves the second ring R2' to the ring lift pin 561. ) aligned to the top of The second transfer hand 342 aligns the second ring R2' to a position where the through hole 525 formed in the second ring R2' and the ring lift pin 561 are displaced when viewed from above. In one example, the ring lift pin 561 may be located in the above-described second position. Thereafter, the second conveying hand 342 seats the second ring R2' on the ring lift pin 561 as shown in FIG. 29 while moving in a downward direction. When the second ring R2' is seated on the ring lift pin 561, the second transfer hand 342 moves below the second ring R2'. After the second ring R2' is seated on the ring lift pin 561, the second transfer hand 342 exits the process chamber 50 as shown in FIG.

Then, as shown in FIG. 31, the ring lift pin 561 descends. The ring lift pin 561 descends until the upper end of the ring lift pin 561 is located at a lower height than the bottom surface of the second ring R2'. Then, the ring lift pin 561 is rotated to the first position as shown in FIG. 32 . As shown in FIG. 33, the ring lift pin 561 rises from the first position.

Afterwards, the second transfer hand 342 enters the process chamber 50 and places the first ring R1 on the dielectric plate 621 . As shown in FIG. 34, the second conveying hand 342 places the first ring R1' on the ring lift pin 561. The second conveying hand 342 moves downward to seat the first ring R1' on the ring lift pin 561. When the first ring R1' is seated on the ring lift pin 561, the conveying hand of the first ring R1' moves lower than the first ring R1'. After the first ring R1' is seated on the ring lift pin 561, the first transfer hand 242 moves further down than the first ring R1'. Then, as shown in FIG. 35, the second transfer hand 342 exits the process chamber 50, and as shown in FIG. 36, the ring lift pin 561 descends to lift the first ring R1'. set on the support plate.

In the above example, it has been described that both the first ring R1 and the second ring R2 are replaced. However, unlike this, only one of the first ring (R1) and the second ring (R2) can be replaced. In one example, when only the first ring R1 is replaced, the process of lifting or lowering the second ring R2 and the process of carrying the second ring R2 in and out of the process chamber 50 may be omitted. .

In one example, when only the second ring R2 is replaced, the first ring R1 is transferred to the outside of the process chamber 50, but is not transferred to the load lock chamber 40 and remains in the first ring transfer hand 3421. It can be. Thereafter, the replaced second ring R2' and the first ring R1 may be sequentially carried into the process chamber 50.

The above detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and describe preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed in this specification, within the scope equivalent to the written disclosure and / or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are also possible. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to cover other embodiments as well.

Claims (20)

In the apparatus for processing the substrate,
a processing chamber having a processing space therein;
a substrate support unit supporting the substrate within the processing space;
a gas supply unit supplying a process gas to the processing space; and
A plasma source generating plasma from the process gas;
The substrate support unit,
a support plate on which the substrate is placed;
a first ring provided to surround the substrate placed on the support plate;
a second ring provided below the first ring and having a through hole; and
Including a ring lift pin assembly for lifting and lowering the first ring and the second ring,
The ring lift pin assembly,
a ring lift pin provided to be inserted into the through hole and lifting and lowering the first ring and the second ring;
A driving unit for driving the ring lift pin,
The ring lift pin,
When viewed from above, the first ring is raised and lowered at a first position where the ring lift pin overlaps the through hole,
When viewed from above, the ring lift pin overlaps the second ring and is provided to lift and lower the second ring at a second position out of the first position. According to claim 1,
The substrate processing apparatus is placed on the substrate support unit so that the lower surface of the first ring and the upper surface of the second ring are in contact with each other. According to claim 1,
The ring lift pin assembly,
Further comprising a cylindrical body extending downward from the ring lift pin and having a wider cross section than the ring lift pin,
The drive unit is provided to rotate the body,
A substrate processing apparatus in which the center of the body is provided to be offset from the center of the ring lift pin. According to claim 3,
the driving unit,
a rotating ring whose inner diameter is provided to come into contact with the outer diameter of the body;
A substrate processing apparatus comprising a driving device providing rotational force to the rotating ring or the body. According to claim 4,
A substrate processing apparatus wherein a friction member is provided on an outer diameter of the body and an inner diameter of the rotating ring. According to claim 4,
A substrate processing apparatus in which teeth meshing with each other are provided on an outer diameter of the body and an inner diameter of the rotating ring. According to claim 3,
the driving unit,
an annular rotation ring provided to surround the body;
a driving device providing rotational force to the rotating ring or the body;
A substrate processing apparatus comprising a link member for transmitting rotational force between the rotating ring and the body. According to claim 1,
a transfer unit carrying the first ring and the second ring into and out of the process chamber;
Further comprising a controller for controlling the driving unit and the conveying unit,
The controller,
When conveying the first ring to the outside of the process chamber,
After the ring lift pin lifts the first ring by a first height from the support plate at the first position,
A substrate processing apparatus for controlling the drive unit and the transfer unit so that the transfer unit removes the first ring from the ring lift pin. According to claim 8,
The controller,
After the conveying unit conveys the first ring to the outside of the process chamber, the second ring is conveyed to the outside of the process chamber;
When conveying the second ring,
The ring lift pin descends in the first position,
The driving unit and the conveying unit are configured to move the ring lift pin to a second position to lift the second ring from the support plate by a second height, and then the conveying unit removes the second ring from the ring lift pin. A substrate processing device to control. According to any one of claims 1 to 9,
The upper end of the ring lift pin is tapered (Tapered) substrate processing device. In the substrate support unit provided inside the process chamber and on which a substrate is placed,
a support plate on which the substrate is placed;
a first ring provided to surround the substrate placed on the support plate;
A second ring provided below the first ring and having a through hole formed therein,
Including a ring lift pin assembly for lifting and lowering the first ring and the second ring,
The ring lift pin assembly,
a ring lift pin provided to be inserted into the through hole and lifting and lowering the first ring and the second ring;
And a driving unit for rotating the ring lift pin between a first position and a second position,
The first position is a position where the ring lift pin corresponds to the through hole when viewed from above,
The second position is a position where the ring lift pin overlaps the second ring when viewed from above but is out of the first position,
The ring lift pin,
A substrate support unit provided to elevate and descend the first ring at the first position and to elevate and descend the second ring at the second position. According to claim 11,
The substrate support unit is placed on the substrate support unit so that the lower surface of the first ring and the upper surface of the second ring are in contact with each other. According to claim 11,
The ring lift pin assembly,
Further comprising a cylindrical body extending downward from the ring lift pin and having a wider cross section than the ring lift pin,
The drive unit is provided to rotate the body,
The substrate support unit provided that the center of the body is offset from the center of the ring lift pin. According to claim 13,
the driving unit,
a rotating ring whose inner diameter comes into contact with the outer diameter of the body and is provided to transmit the rotational force of the body;
A substrate support unit comprising a driving device providing rotational force to the body. According to claim 13,
a transfer unit carrying the first ring and the second ring into and out of the process chamber;
Further comprising a controller for controlling the driving unit and the conveying unit,
The controller,
When conveying the first ring to the outside of the process chamber,
After the ring lift pin lifts the first ring by a first height from the support plate at the first position,
A substrate support unit that controls the driving unit and the conveying unit so that the conveying unit removes the first ring from the ring lift pin. According to claim 15,
The controller,
After the conveying unit conveys the first ring to the outside of the process chamber, the second ring is conveyed to the outside of the process chamber;
When conveying the second ring,
The ring lift pin descends in the first position,
The driving unit and the conveying unit are configured to move the ring lift pin to a second position to lift the second ring from the support plate by a second height, and then the conveying unit removes the second ring from the ring lift pin. A substrate support unit to control. According to any one of claims 11 to 16,
An upper end of the ring lift pin is a tapered substrate support unit. In the method of conveying the first ring and the second ring using the substrate processing apparatus of claim 1,
When conveying the first ring and the second ring to the outside of the process chamber,
Sequentially conveying the first ring and the second ring,
Remove the first ring from the ring lift pin after the ring lift pin lifts the first ring from the support plate by a first height at the first position,
Thereafter, the ring lift pin is lowered and moved to the second position to lift the second ring from the support plate by a second height at the second position to remove the second ring from the ring lift pin. method. According to claim 17,
The ring conveying method of claim 1, wherein the ring lift pin is rotatably provided between the first position and the second position. According to any one of claims 17 to 19,
The ring lift pin,
A ring conveying method rotated by a body eccentric from the center of the ring lift pin.

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