KR20230017622A - An apparatus for treating substrate - Google Patents

Abstract

The present invention provides a substrate treatment apparatus, which can control the temperature of the focus ring. The substrate treatment apparatus comprises: a housing with a treatment space for treating a substrate; a support unit for supporting the substrate in the processing space; a gas supply unit for supplying process gas into the treatment space; and a plasma source for generating plasma from the process gas. The support unit includes an electrostatic chuck on which the substrate is seated and to which high frequency power is applied, an insulating plate located below the electrostatic chuck, a ring member provided in an annular ring shape to surround the electrostatic chuck, and a heat transfer path. The ring member includes a focus ring surrounding the circumference of the substrate mounted on the electrostatic chuck and a coupling ring located below the focus ring and having the high frequency power coupled thereto. The heat transfer path supplies a heat transfer medium to the space formed between the focus ring and the coupling ring, and comprises a first flow path extending from the space to an upper end of the insulating plate, and a second flow path extending from the first flow path and passing vertically through the insulating plate. The second flow path can be provided in a spiral shape.

Description

Substrate processing device {AN APPARATUS FOR TREATING SUBSTRATE}

The present invention relates to an apparatus for processing a substrate, and more particularly, to a substrate processing apparatus for processing a plasma on a substrate.

Plasma refers to an ionized gaseous state composed of ions, radicals, and electrons. Plasma is generated by very high temperatures, strong electric fields, or RF Electromagnetic Fields. A semiconductor device manufacturing process may include an etching process of removing a thin film formed on a substrate such as a wafer using plasma. The etching process is performed when ions and/or radicals of the plasma collide with or react with the thin film on the substrate.

An apparatus for processing a substrate using plasma has a process chamber, a support assembly for supporting a substrate in the process chamber, and a plasma source for generating plasma from a gas that processes the substrate. The support assembly includes an electrostatic chuck that fixes the substrate with electrostatic force and a focus ring that surrounds an outer circumference of the substrate seated on the electrostatic chuck. The focus ring reduces plasma non-uniformity caused by non-uniform plasma distribution across the substrate. In general, the focus ring must maintain a temperature lower than that of the plasma. This is because, when the temperature of the focus ring is high, plasma is concentrated in an edge region of the substrate surrounded by the focus ring. Furthermore, since the focus ring is directly exposed to plasma, strong heat resistance and thermal control are essential.

Various methods have been tried for thermal control of the focus ring, and a method of injecting a cooling gas into the lower portion of the focus ring is generally used. A passage for supplying cooling gas is embedded in the support assembly. The inside of the support assembly is a space where a potential difference is generated. As a result, a problem occurs in that the flow path for supplying the cooling gas is insulated. Also, when the cooling gas is injected from the lower part of the focus ring, the position of the focus ring is variable. As a result, the focus ring is not fixed at a certain position, preventing plasma from being uniformly formed on the substrate.

An object of the present invention is to provide a substrate processing apparatus capable of adjusting the temperature of a focus ring.

Another object of the present invention is to provide a substrate processing apparatus capable of preventing dielectric breakdown of a flow path through which a heat transfer medium for controlling the temperature of a focus ring is supplied.

Another object of the present invention is to provide a substrate processing apparatus in which a position of a focus ring can be fixed.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the description below.

The present invention provides an apparatus for processing a substrate. An apparatus for processing a substrate includes a housing having a processing space for processing a substrate, a support unit for supporting a substrate in the processing space, a gas supply unit for supplying a process gas into the processing space, and a plasma source for generating plasma from the process gas. The support unit includes an electrostatic chuck on which a substrate is seated and to which high-frequency power is applied, an insulating plate positioned under the electrostatic chuck, a ring member provided in a ring shape and surrounding the electrostatic chuck, and a heat transfer path. wherein the ring member includes a focus ring surrounding a circumference of a substrate seated on the electrostatic chuck and a coupling ring positioned below the focus ring to couple the high-frequency power, and the heat transfer passage is A first flow path that supplies a heat transfer medium to an interspace formed between the focus ring and the coupling ring, extends from the interspace to an upper end of the insulating plate, and extends from the first flow path and vertically penetrates the insulating plate. It is formed as a second flow path, and the second flow path may be provided in a spiral shape.

According to one embodiment, the first passage may be provided in a straight line.

In an exemplary embodiment, a dielectric layer may be provided on an upper portion of the coupling ring, and an edge electrode for adsorbing the focus ring with an electrostatic force may be provided on a lower portion of the dielectric layer.

According to an embodiment, the electrostatic chuck may include a dielectric plate provided with an electrostatic electrode for adsorbing a substrate with electrostatic force, and an electrode plate provided under the dielectric plate and connected to a high frequency power source generating the high frequency power. .

According to one embodiment, the heat transfer medium may be provided as an inert gas containing helium (He).

In addition, the present invention provides an apparatus for processing a substrate. An apparatus for processing a substrate includes a housing having a processing space for processing a substrate, a support unit for supporting a substrate in the processing space, a gas supply unit for supplying a process gas into the processing space, and a plasma source for generating plasma from the process gas. The support unit includes a dielectric plate provided with an electrostatic electrode for adsorbing the substrate by electrostatic force, an electrode plate provided below the dielectric plate and connected to a high frequency power source for generating high frequency power, and provided below the electrode plate. An insulating plate and a ring member provided in an annular ring shape, wherein the ring member is a focus ring that surrounds a substrate placed on the dielectric plate, is located below the focus ring, and holds the focus ring at the top by electrostatic force. A coupling ring provided with an adsorbing edge electrode and a heat transfer passage supplying a heat transfer medium to an interspace formed between the focus ring and the coupling ring, wherein the heat transfer passage extends from the interspace to the insulating plate. It is formed of a first flow path extending to an upper end and a second flow path extending from the first flow path and vertically penetrating the insulating plate, and the second flow path may be provided in a spiral shape.

According to one embodiment, the first passage may be provided in a straight line.

According to an embodiment, a dielectric layer may be further provided on an upper portion of the coupling ring, and the edge electrode may be positioned under the dielectric layer.

According to one embodiment, the heat transfer gas may be provided as an inert gas containing helium (He).

According to one embodiment of the present invention, the temperature of the focus ring can be adjusted.

In addition, according to one embodiment of the present invention, it is possible to prevent dielectric breakdown of a passage through which a heat transfer medium for controlling the temperature of the focus ring is supplied.

Also, according to one embodiment of the present invention, the position of the focus ring may be fixed.

The effects of the present invention are not limited to the above-mentioned effects, and effects not mentioned will be clearly understood by those skilled in the art from this specification and the accompanying drawings.

1 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram schematically showing an embodiment of the process chamber of FIG. 1 .
FIG. 3 is a schematic view of the ring member of FIG. 2 .
FIG. 4 is a graph showing electrical insulation performance according to the distance between electrodes of the heat transfer path of FIG. 2 .
FIG. 5 is a schematic view of another embodiment of the process chamber of FIG. 2 .
FIG. 6 is a schematic view of another embodiment of the process chamber of FIG. 2 .

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited due to the examples described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shapes of components in the drawings are exaggerated to emphasize a clearer description.

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 1 to 6 .

1 is a diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1 , a substrate processing apparatus 1 according to an embodiment of the present invention includes a load port 10, an atmospheric pressure transfer module 20, a vacuum transfer module 30, a load lock chamber 40, and a process A chamber 50 may be included.

The load port 10 may be disposed on one side of the normal pressure transfer module 20 to be described later. One or a plurality of load ports 10 may be provided. The number of load ports 10 may increase or decrease depending on process efficiency and footprint conditions. A container (F) according to an embodiment of the present invention may be placed in the load port (10). The container F is transported by a transport means (not shown) such as an Overhead Transfer Apparatus (OHT), an overhead conveyor, or an Automatic Guided Vehicle, or a load port 10 by an operator. It can be loaded into or unloaded from the load port (10). The container (F) may include various types of containers according to the type of goods to be stored. As the container F, an airtight container such as a front opening unified pod (FOUP) may be used.

The normal pressure transfer module 20 and the vacuum transfer module 30 may be arranged along the first direction 2 . Hereinafter, when viewed from above, a direction perpendicular to the first direction (2) is defined as a second direction (4). In addition, a direction perpendicular to the plane including both the first direction (2) and the second direction (4) is defined as the third direction (6). Here, the third direction 6 is a direction perpendicular to the ground.

The normal pressure transfer module 20 may selectively transfer the substrate W or the ring member 600 between the container F and the load lock chamber 40 to be described later. For example, the normal pressure transfer module 20 takes out the substrate W from the container F and transfers it to the load lock chamber 40 or takes out the substrate W from the load lock chamber 40 and transfers it to the container F ) can be returned. The normal pressure transfer module 20 may include a transfer frame 220 and a first transfer robot 240 . The transport frame 220 may be provided between the load port 10 and the load lock chamber 40 . That is, the load port 10 may be connected to the transport frame 220 . The transport frame 220 may be provided with normal pressure inside. The inside of the transport frame 220 may be maintained in an atmospheric pressure atmosphere.

A first transfer robot 240 may be provided in the transfer frame 220 . The first transport robot 240 may selectively transport the substrate W or the ring member 600 between the container F seated in the load port 10 and the load lock chamber 40 to be described later.

The first transfer robot 240 may move in a vertical direction. The first transfer robot 240 may have a first transfer hand 242 that moves forward, backward or rotates on a horizontal plane. One or a plurality of first transfer hands 242 of the first transfer robot 240 may be provided. A substrate W may be placed on the first transfer hand 242 . The first conveying hand 242 may convey the ring member 600 to be described later. Optionally, a ring carrier (not shown) to be described later supporting the ring member 600 may be placed on the first transfer hand 242 . Optionally, the first conveying hand 242 may directly support the ring member 600. The ring member 600 may be placed on the first transfer hand 242 .

The vacuum transfer module 30 may be disposed between a load lock chamber 40 to be described later and a process chamber 50 to be described later. The vacuum transfer module 30 may include a transfer chamber 320 and a second transfer robot 340 .

An internal atmosphere of the transfer chamber 320 may be maintained as a vacuum pressure atmosphere. A second transfer robot 340 may be provided in the transfer chamber 320 . For example, the second transfer robot 340 may be located in the center of the transfer chamber 320 . The second transport robot 340 may selectively transport the substrate W or the ring member 600 between the load lock chamber 40 and the process chamber 50 . Optionally, the vacuum transfer module 30 may transfer the substrate W between the process chambers 50 . The second transfer robot 340 can move in horizontal and vertical directions. The second transfer robot 340 may have a second transfer hand 342 that moves forward, backward or rotates on a horizontal surface. At least one second transfer hand 342 of the second transfer robot 340 may be provided.

At least one process chamber 50 to be described below may be connected to the transfer chamber 320 . The transfer chamber 320 may be provided in a polygonal shape. A load lock chamber 40 and a process chamber 50 may be disposed around the transfer chamber 320 . For example, as shown in FIG. 1 , a hexagonal transfer chamber 320 may be disposed at the center of the vacuum transfer module 30 , and a load lock chamber 40 and a process chamber 50 may be disposed around the transfer chamber 320 . However, the shape of the transfer chamber 320 and the number of process chambers may be variously modified and provided according to user needs.

The load lock chamber 40 may be disposed between the transfer frame 220 and the transfer chamber 320 . The load lock chamber 40 provides a buffer space B in which the substrate W or the ring member 600 is exchanged between the transfer frame 220 and the transfer chamber 320 . For example, in order to replace the ring member 600 disposed in the process chamber 50 , the ring member 600 used in the process chamber 50 may temporarily stay in the load lock chamber 40 . For example, in order to transfer the new ring member 600 scheduled to be replaced to the process chamber 50 , the new ring member 600 may temporarily stay in the load lock chamber 40 .

As described above, an internal atmosphere of the transfer frame 220 may be maintained as an atmospheric pressure atmosphere, and an internal atmosphere of the transfer chamber 320 may be maintained as a vacuum pressure atmosphere. The load lock chamber 40 is disposed between the transport frame 220 and the transfer chamber 320 so that its internal atmosphere can be switched between an atmospheric pressure atmosphere and a vacuum pressure atmosphere.

The transfer chamber 320 may be connected to one or more process chambers 50 . A plurality of process chambers 50 may be provided. The process chamber 50 may be a chamber for performing a process on the substrate (W). The process chamber 50 may be a plasma chamber that processes the substrate W using plasma. For example, the process chamber 50 may perform an etching process of removing a thin film on the substrate W using plasma, an ashing process of removing a photoresist film, and a deposition process of forming a thin film on the substrate W. , or may be a chamber for performing a dry cleaning process. However, it is not limited thereto, and the plasma treatment process performed in the process chamber 50 may be variously modified into a known plasma treatment process.

FIG. 2 is a diagram schematically showing an embodiment of the process chamber of FIG. 1 . Referring to FIG. 2 , the process chamber 50 may process the substrate W by delivering plasma to the substrate W. The process chamber 50 may include a housing 510 , a support unit 520 , a gas supply unit 530 , and a plasma source 540 .

The housing 510 provides a processing space in which a substrate processing space is performed. The housing 510 may be provided in a sealed shape. When processing the substrate W, the processing space of the housing 510 may be maintained in a substantially vacuum atmosphere. The housing 510 may be made of a metal material. For example, the housing 510 may be made of aluminum. Housing 510 may be grounded. A carrying inlet 512 through which the substrate W and the ring member 600 are carried in or taken out may be formed on one side of the housing 510 . The intake port 512 may be selectively opened and closed by the gate valve 514 .

An exhaust hole 516 may be formed on the bottom surface of the housing 510 . The exhaust line 560 may be connected to the exhaust hole 516 . The exhaust line 560 may exhaust process gas, process by-products, and the like supplied to the processing space of the housing 510 to the outside of the housing 510 through the exhaust hole 516 . An exhaust baffle 550 may be provided above the exhaust hole 516 to more uniformly exhaust the processing space. When viewed from the top, the exhaust baffle 550 may have a generally ring shape. In addition, at least one hole may be formed in the exhaust baffle 550 .

A heater 518 is provided on the wall of the housing 510 . Heater 518 heats the walls of housing 510 . The heater 518 is electrically connected to a heating power source (not shown). The heater 518 generates heat by resisting a current applied from a heating power source (not shown). Heat generated by the heater 518 is transferred to the processing space to maintain the processing space at a predetermined temperature. The heater 518 may be provided as a coil-shaped heating wire. A plurality of heaters 518 may be provided on the wall of the housing 510 .

The support unit 520 is located inside the housing 510 . The support unit 520 may be spaced apart from the bottom surface of the housing 510 upward. The support unit 520 supports the substrate W. The support unit 520 includes an electrostatic chuck that adsorbs the substrate W using electrostatic force. Alternatively, the support unit 520 may support the substrate W in various ways such as a vacuum adsorption method or mechanical clamping. Hereinafter, the support unit 520 including the electrostatic chuck will be described.

The support unit 520 may include an electrostatic chuck, an insulating plate 523 , a lower body 524 , a ring member 600 , and a heat transfer passage 700 . A substrate W may be seated on the electrostatic chuck, and high-frequency power may be applied thereto. The electrostatic chuck may include a dielectric plate 521 and an electrode plate 522 .

The dielectric plate 521 is positioned at the upper end of the support unit 520 . The dielectric plate 521 may be provided as a disk-shaped dielectric substance. A substrate W is placed on the upper surface of the dielectric plate 521 . The upper surface of the dielectric plate 521 has a radius smaller than that of the substrate (W). When the substrate W is placed on the upper surface of the dielectric plate 521, the edge region of the substrate W is located outside the dielectric plate 521. An electrode 525 and a heater 526 are embedded in the dielectric plate 521 . The electrode 525 may be positioned above the heater 526 .

The electrode 525 is electrically connected to the first power source 525a. The first power supply 525a may include DC power. A first switch 525b is installed between the electrode 525 and the first power source 525a. The electrode 525 may be electrically connected to the first power source 525a by turning on/off the first switch 525b. When the first switch 525b is turned on, a direct current is applied to the electrode 525 . An electrostatic force acts between the electrode 525 and the substrate W by the current applied to the electrode 525 . Accordingly, the substrate W is adsorbed to the dielectric plate 521 .

The heater 526 is electrically connected to the second power source 526a. A second switch 526b may be installed between the heater 526 and the second power source 526a. The heater 526 may be electrically connected to the second power source 526a by turning on/off the second switch 526b. The heater 526 generates heat by resisting the current applied from the second power source 526a. The generated heat is transferred to the substrate W through the dielectric plate 521 . The substrate W may be maintained at a predetermined temperature by the heat generated by the heater 526 . The heater 526 may include a spiral coil. A plurality of heaters 526 are provided. The heaters 526 may be respectively provided in different regions of the dielectric plate 521 . For example, a heater 526 for heating a central region of the dielectric plate 521 and a heater 526 for heating an edge region of the dielectric plate 521 may be respectively provided, and these heaters 526 may be provided independently of each other. can be controlled

In the above example, it has been described that the heater 526 is provided within the dielectric plate 521 , but is not limited thereto, and the heater 526 may not be provided within the dielectric plate 521 .

The electrode plate 522 is positioned below the dielectric plate 521 . The electrode plate 522 may be provided in a disk shape. The electrode plate 522 may be made of a conductive material. For example, the electrode plate 522 may be made of aluminum. An upper central region of the electrode plate 522 may have an area corresponding to a lower surface of the dielectric plate 521 .

The electrode plate 522 may include a metal plate. According to an example, the entire area of the electrode plate 522 may be provided as a metal plate. The electrode plate 522 may be electrically connected to the third power source 522a. The third power source 522a may be provided as a high frequency power source that generates high frequency power. The high frequency power may be provided as an RF power. The RF power source may be provided as a high bias power RF power source. The electrode plate 522 receives high frequency power from the third power source 522a. Due to this, the electrode plate 522 can function as an electrode. The electrode plate 522 may be provided grounded. For example, the electrode plate 522 may function as a lower electrode.

An upper passage 527 and a lower passage 528 may be provided inside the electrode plate 522 . The upper passage 527 serves as a passage through which the heat transfer medium circulates. The upper passage may be formed in a spiral shape inside the electrode plate 522 . The upper passage 527 is connected to the first fluid supply source 527a through a first fluid supply line 527c. A heat transfer medium is stored in the first fluid supply source 527a. The heat transfer medium may contain an inert gas. For example, the heat transfer medium may be helium (He) gas. Helium gas is supplied to the upper passage 527 through the first fluid supply line 527c. The helium gas is supplied to the lower surface of the substrate W through the upper passage 527 . The helium gas may serve as a medium through which heat transferred from the plasma to the substrate W is transferred to the dielectric plate 521 and the ring member 600 .

The lower passage 528 serves as a passage through which a heat transfer medium circulates. It may be formed in a spiral shape inside the electrode plate 522 . The lower passage 528 is connected to the second fluid supply source 528a through a second fluid supply line 528c. A heat transfer medium is stored in the second fluid supply source 528a. The heat transfer medium may be provided as a cooling fluid. For example, the cooling fluid may be provided as cooling water. Cooling water is supplied to the lower passage 528 through the second fluid supply line 528c. The cooling water may flow through the lower passage 528 and cool the electrode plate 522 .

An insulating plate 523 is provided below the electrostatic chuck. An insulating plate 523 is provided below the electrode plate 522 . The insulating plate 523 is made of an insulating material and electrically insulates the electrode plate 522 from the lower body 524 to be described later. When viewed from above, the insulating plate 523 may be provided in a circular plate shape. The insulating plate 523 may have an area corresponding to that of the electrode plate 522 .

The lower body 524 is provided below the electrode plate 522 . The lower body 524 may be provided below the insulating plate 523 . When viewed from the top, the lower body 524 may be provided in a ring shape.

The lower body 524 has a connecting member 524a. The connecting member 524a connects the outer surface of the lower body 524 and the inner wall of the housing 510 . A plurality of connection members 524a may be provided on the outer surface of the lower body 524 at regular intervals. The connecting member 524a supports the support unit 520 inside the housing 510 . In addition, the connecting member 524a is connected to the inner wall of the housing 510 so that the lower body 524 is electrically grounded. A first power line 525c connected to the first power supply 525a, a second power line 526c connected to the second power supply 526a, and a first fluid supply line 527c connected to the upper flow path 527 , and the second fluid supply line 528c connected to the lower passage 528 extends to the outside of the housing 510 through the inner space of the connecting member 524a.

The gas supply unit 530 supplies process gas to the processing space of the housing 510 . The gas supply unit 530 may include a gas supply nozzle 532 , a gas supply line 534 , and a gas storage unit 536 . The gas supply nozzle 532 may be installed in the central portion of the upper surface of the housing 510 . An injection hole is formed on the bottom of the gas supply nozzle 532 . The nozzle supplies process gas into the housing 510 . The gas supply line 534 connects the gas supply nozzle 532 and the gas storage unit 536 . The gas supply line 534 supplies process gas stored in the gas storage unit 536 to the gas supply nozzle 532 . A valve 538 is installed in the gas supply line 534 . The valve 538 may open and close the gas supply line 534 to adjust the flow rate of the process gas supplied through the gas supply line 534 .

The plasma source 540 excites the process gas in the housing 510 into a plasma state. In an embodiment of the present invention, a capacitively coupled plasma (CCP) is used as a plasma source. However, the process gas in the housing 510 may be excited into a plasma state using inductively coupled plasma (ICP) or microwave plasma, without being limited thereto. Hereinafter, a case in which capacitively coupled plasma (CCP) is used as a plasma source will be described as an example.

The capacitively coupled plasma source may include an upper electrode and a lower electrode inside the housing 510 . The upper electrode and the lower electrode may be vertically disposed parallel to each other inside the housing 510 . One of the two electrodes may apply high-frequency power, and the other electrode may be grounded. Alternatively, high frequency power may be applied to both electrodes. An electromagnetic field is formed in a space between both electrodes, and process gas supplied to the space may be excited into a plasma state. A substrate treatment process is performed using plasma.

According to an example, the upper electrode may be provided as a shower head unit 590 to be described later, and the lower electrode may be provided as the metal plate described above. High-frequency power may be applied to the lower electrode, and the upper electrode may be grounded. Alternatively, high-frequency power may be applied to the upper electrode and the lower electrode, respectively. Due to this, an electromagnetic field is generated between the upper electrode and the lower electrode. The generated electromagnetic field excites the process gas provided inside the housing 510 into a plasma state.

The shower head unit 590 may include a shower head 592 , a gas dispensing plate 594 , and a support 596 . The shower head 592 may be spaced apart from the top of the housing 510 by a predetermined distance from the bottom to the bottom. A certain space may be formed between the gas dispensing plate 594 and the upper surface of the housing 510 . The shower head 592 may be provided in a plate shape having a constant thickness. A bottom surface of the shower head 592 may be anodized to prevent arc generation by plasma. A cross section of the shower head 592 may have the same shape and cross section as that of the support unit 520 . The shower head 592 includes a plurality of through holes 593 . The through hole 593 penetrates the upper and lower surfaces of the shower head 592 in a vertical direction. The shower head 592 may include a metal material. The shower head 592 may be electrically connected to the fourth power source 592a. The fourth power source 592a may be provided as a high frequency power source. Alternatively, shower head 592 may be electrically grounded. For example, the shower head 592 may function as an upper electrode.

The gas spray plate 594 may be positioned on an upper surface of the shower head 592 . The gas injection plate 594 may be spaced apart from the upper surface of the housing 510 by a predetermined distance. The gas injection plate 594 may be provided in a plate shape having a constant thickness. The gas dispensing plate 594 is provided with a dispensing hole 595 . The injection hole 595 penetrates the upper and lower surfaces of the gas injection plate 594 in a vertical direction. The spray hole 595 is located opposite to the through hole 593 of the shower head 592 . The gas dispensing plate 594 may include a metal material.

The support part 596 supports the side parts of the shower head 592 and the gas dispensing plate 594 . The upper end of the support part 596 is connected to the upper surface of the housing 510, and the lower end is connected to the shower head 592 and the side of the gas dispensing plate 594. The support part 596 may include a non-metallic material.

FIG. 3 is a schematic view of the ring member of FIG. 2 . Hereinafter, with reference to FIGS. 2 and 3 , the ring member and the heat transfer passage will be described in detail.

The ring member 600 is disposed on the edge area of the support unit 520 . A ring member 600 is provided to enclose the electrostatic chuck. For example, the ring member 600 may be provided to surround a side portion of the dielectric plate 521 . When viewed from above, the ring member 600 may have a generally ring shape. The ring member 600 allows plasma to be concentrated in a region facing the substrate W in the process chamber 50 . The ring member 600 may include a focus ring 620 , a coupling ring 640 , and an edge electrode 660 .

The focus ring 620 may be provided in a ring shape. The focus ring 620 is provided to surround the substrate W placed on the electrostatic chuck. The focus ring 620 may be provided to surround the substrate W placed on the dielectric plate 521 . When viewed from the top, the focus ring 620 may have a ring shape. A top surface of the focus ring 620 may be positioned higher than a top surface of the substrate W. Accordingly, the focus ring 620 allows plasma to be concentrated on a region facing the substrate W within the process chamber 50 . The focus ring 620 may be made of a material including silicon (Si) or silicon carbide (SiC).

In FIGS. 2 and 3 , the focus ring is shown to have a substantially rectangular shape when viewed from the front, but is not limited thereto. For example, the focus ring 620 may have a shape in which a height of an inner top surface is lower than a height of an outer top surface. Accordingly, the lower surface of the edge region of the substrate W may be placed on the inner upper surface of the focus ring 620 . In addition, the focus ring 620 may have an upwardly inclined surface between an inner upper surface and an outer upper surface in a direction from the center of the substrate W toward the outside of the substrate W. Due to this, when the substrate W is placed on the inner upper surface of the focus ring 620, the substrate W slides along the inclined surface of the focus ring 620 even if the position is somewhat inaccurate, and the substrate W is placed on the inner upper surface of the focus ring 620. can be properly seated.

Coupling ring 640 may be provided in a ring shape. When viewed from the top, the coupling ring 640 may have a shape corresponding to that of the focus ring 620 . The coupling ring 640 is positioned below the focus ring 620 . A coupling ring 640 may be provided to surround a side of the electrostatic chuck. The coupling ring 640 may be provided to surround the side of the dielectric plate 521 .

Coupling ring 640 can be a conductor, semiconductor, or dielectric. For example, the coupling ring 640 may be aluminum (Al). The coupling ring 640 may couple high frequency power applied to the electrostatic chuck. For example, the coupling ring 640 may couple the high frequency power applied to the electrode plate 522 by the third power source 522a. The coupling ring 640 may serve as a medium to minimize electrical change between the electrostatic chuck and the focus ring 620 . The coupling ring 640 may induce an electrostatic chuck and an electric field coupling to the focus ring 620 to form a pseudo electric field environment. Accordingly, the coupling ring 640 may increase the amount of high-frequency coupling energy that excites the plasma.

A dielectric layer 642 and an edge electrode 660 may be provided on the coupling ring 640 . The dielectric layer 642 may be provided with a dielectric substance. When viewed from the top, the dielectric layer 642 may be provided in a substantially ring shape. A dielectric layer 642 may be located on top of the coupling ring 640 . When viewed from above, the dielectric layer 642 may be provided in a shape corresponding to that of the coupling ring 640 . Edge electrode 660 is provided on coupling ring 640 . The edge electrode 660 may be buried inside the coupling ring 640 . The edge electrode 660 may be provided below the dielectric layer 642 . The edge electrode 660 is electrically connected to an external power source. External power may include DC power. A DC current may be applied to the edge electrode 660 . An electrostatic force acts between the edge electrode 660 and the focus ring 620 by a current applied to the edge electrode 660 . Accordingly, the coupling ring 640 in which the edge electrode 660 is buried may adsorb the focus ring 620 .

The heat transfer passage 700 supplies a heat transfer medium. The heat transfer passage 700 supplies a heat transfer medium to a space formed between the focus ring 620 and the coupling ring 640 . For example, the heat transfer medium may be helium (He). Optionally the heat transfer medium may be an inert gas. The heat transfer passage 700 may vertically penetrate the electrostatic chuck and the insulating plate 523 . The heat transfer passage 700 may be formed by vertically penetrating the dielectric plate 521 , the electrode plate 522 , the insulating plate 523 , and the coupling ring 640 .

The heat transfer passage 700 may include a first passage 720 and a second passage 740 . The first passage 720 may extend from the interspace to the top of the insulating plate 523 . The first passage 720 may extend from an upper end of the coupling ring 640 to an upper end of the insulating plate 523 . The first passage 720 may be formed by vertically penetrating the dielectric plate 521 , the electrode plate 522 , and the coupling ring 640 . The first passage 720 may be formed by vertically penetrating the dielectric plate 521 , the electrode plate 522 , the coupling ring 640 , the dielectric layer 642 , and the edge electrode 660 . The first flow path 720 may be provided in a substantially straight line.

The second flow path 740 may extend downward from the first flow path 720 . The second passage 740 may extend from an upper end of the insulating plate 523 to a lower end of the insulating plate 523 . The second passage 740 may be formed by vertically penetrating the insulating plate 523 . The second passage 740 may be provided in a spiral shape. However, the shape of the second flow path 740 is not limited thereto, and the shape of the second flow path 740 may be provided with a long moving distance of the heat transfer medium flowing inside the second flow path 740 from the upper end to the lower end of the insulating plate 523. It can be modified and provided.

When the temperature of the focus ring 620 is high, plasma is concentrated in an edge region of the substrate W surrounded by the focus ring. In order to prevent plasma from being non-uniformly formed on the substrate (W) due to concentration of plasma at the edge of the substrate (W), in the present embodiment, a heat transfer channel is provided below the focus ring (620). According to an embodiment of the present invention, a heat transfer medium may be supplied from the heat transfer passage 700 provided at the upper end of the coupling ring 640 to the space formed between the focus ring 620 and the coupling ring 640. . Accordingly, the temperature of the focus ring 620 can be appropriately adjusted. Accordingly, the plasma may be uniformly distributed on the substrate W. In addition, by providing the coupling ring 640 below the focus ring 620 , an electrostatic chuck and an electric field coupling may be induced with respect to the focus ring 620 to form a similar electric field environment. Accordingly, the coupling ring 640 may increase the amount of high-frequency coupling energy that excites the plasma.

When the heat transfer medium is supplied to the space between the focus ring 620 and the coupling ring 640 in order to properly control the temperature of the focus ring 620, the focus ring 620 is kept constant by the supply pressure of the heat transfer medium. can be spaced apart. That is, when the temperature of the focus ring 620 is adjusted, the focus ring 620 may be detached from its original position. Accordingly, in an embodiment of the present invention, positional deviation of the focus ring 620 may be prevented by providing the edge electrode 660 within the coupling ring 640 . That is, in addition to appropriately adjusting the temperature of the focus ring 620, the edge electrode 660 adsorbs the focus ring 620 with electrostatic force, thereby preventing the focus ring 620 from moving out of position.

When the heat transfer passage 700 for supplying the heat transfer medium is provided to vertically penetrate the dielectric plate 521, the electrode plate 522, and the insulating plate 523, there is a problem that the heat transfer passage 700 is damaged. can be caused Thus, in an embodiment of the present invention, arcing of the heat transfer passage 700 can be prevented by providing the second passage in a spiral shape. A detailed description thereof will be described with reference to FIG. 4 . FIG. 4 is a graph showing electrical insulation performance according to the distance between electrodes of the heat transfer path of FIG. 2 . Referring to FIG. 4, the Y-axis is the voltage (dielectric breakdown voltage) required for arcing to occur in the heat transfer passage, and the X-axis is the value for the pressure at which the heat transfer passage is arced and the distance between the electrodes. am.

Referring to FIG. 4 , as the distance between the electrodes becomes relatively large, the voltage value at which the heat transfer path undergoes dielectric breakdown increases. That is, even if the voltage applied to each electrode is relatively high, the electrical insulation performance of the heat transfer passage may increase when the distance between the electrodes is provided large. Accordingly, in an embodiment of the present invention, a relatively large distance between electrodes can be provided by providing the second flow path 740 in a spiral shape that vertically penetrates the inside of the insulating plate 523 having a relatively high potential difference. Accordingly, the second flow path 740 having a relatively high possibility of dielectric breakdown in the heat transfer path 700 was provided in a spiral shape. Accordingly, the relative distance between the electrodes of the second flow passage 740 provided in a spiral shape increases, and the voltage value required for dielectric breakdown also increases. That is, the temperature of the focus ring 620 can be stably controlled by strengthening the insulation performance of the heat transfer passage 700 to enhance durability.

In the above-described embodiment of the present invention, the second flow path 740 is formed to penetrate vertically from the upper end to the lower end of the insulating plate 523 as an example, but is not limited thereto.

5 and 6 are views schematically showing another embodiment of the process chamber of FIG. 2 . Referring to FIGS. 5 and 6 , the first passage 720 may be formed from an upper end of the coupling ring 640 to a lower end of the coupling ring 640 . The first flow passage 720 may be formed by vertically penetrating the coupling ring 640 . The second flow path 740 may extend from the first flow path 720 . The second flow path 740 may be formed to vertically penetrate from an upper end of the dielectric plate 521 to a lower end of the insulating plate 523 . The second passage 740 may be provided in a spiral shape.

Referring to FIG. 6 , the second flow path 740 may be formed to vertically penetrate from the upper end of the dielectric plate 521 to the lower end of the insulating plate 523 . The second passage 740 may be provided in a spiral shape. The second passage 740 penetrating the dielectric plate 521 and the electrode plate 522 may be provided in a spiral shape wound a first number of times. The second passage 740 penetrating the insulating plate 523 may be provided in a spiral shape wound a second number of times. The first number of times may be provided less than the second number of times. That is, the second flow path 740 penetrating the insulating plate 523 may have a spiral shape that is relatively more closely wound than the second flow path 740 penetrating the dielectric plate 521 and the electrode plate 522 .

In the above-described embodiment, it has been described that the second flow path 740 vertically penetrates from the upper end of the dielectric plate 521 to the lower end of the insulating plate 523, but is not limited thereto. For example, the first flow path 720 may be formed to penetrate vertically from the upper end of the coupling ring 640 to the lower end of the dielectric plate 521, and the second flow path 740 may be formed through the lower end of the dielectric plate 521. It may be formed by vertically penetrating from the bottom to the lower end of the insulating plate 523 .

The above detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and describe preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed in this specification, within the scope equivalent to the written disclosure and / or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are also possible. Therefore, the above detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to cover other embodiments as well.

10: load port
20: normal pressure transfer module
30: vacuum transfer module
40: load lock chamber
50: process chamber
510: housing
520: support unit
521: dielectric plate
522: electrode plate
523: insulating plate
530: gas supply unit
540: plasma source
600: ring member
620: focus ring
640: coupling ring
660: edge electrode
700: heat transfer flow path
720: 1st Euro
740: 2nd Euro

Claims (9)

In the apparatus for processing the substrate,
a housing having a processing space for processing a substrate;
a support unit supporting a substrate in the processing space;
a gas supply unit supplying a process gas into the processing space; and
A plasma source generating plasma from the process gas,
The support unit is
an electrostatic chuck on which a substrate is seated and to which high-frequency power is applied;
an insulating plate located under the electrostatic chuck;
a ring member provided in an annular ring shape and surrounding the electrostatic chuck; and
Including a heat transfer flow path,
The ring member,
a focus ring surrounding the substrate seated on the electrostatic chuck; and
a coupling ring positioned below the focus ring and coupled with the high frequency power;
The heat transfer passage,
supplying a heat transfer medium to a space formed between the focus ring and the coupling ring;
A first flow path extending from the interspace to an upper end of the insulating plate, and a second flow path extending from the first flow path and vertically penetrating the insulating plate,
The second flow path is provided in a spiral shape. According to claim 1,
The first flow path is provided in a straight line. According to claim 2,
The coupling ring,
A substrate processing apparatus comprising: a dielectric layer provided thereon; and an edge electrode adsorbing the focus ring with electrostatic force provided below the dielectric layer. According to claim 3,
The electrostatic chuck,
a dielectric plate provided with an electrostatic electrode that adsorbs the substrate by electrostatic force; and
and an electrode plate provided below the dielectric plate and connected to a high-frequency power source generating the high-frequency power. According to any one of claims 1 to 4,
The heat transfer medium is
A substrate processing apparatus provided with an inert gas containing helium (He). In the apparatus for processing the substrate,
a housing having a processing space for processing a substrate;
a support unit supporting a substrate in the processing space;
a gas supply unit supplying a process gas into the processing space; and
A plasma source generating plasma from the process gas,
The support unit is
a dielectric plate provided with electrostatic electrodes that adsorb the substrate with electrostatic force;
an electrode plate provided below the dielectric plate and connected to a high-frequency power source for generating high-frequency power;
Insulation plate provided under the electrode plate
a ring member provided in an annular ring shape; and
Including a heat transfer flow path,
The ring member,
a focus ring surrounding the substrate placed on the dielectric plate; and
a coupling ring positioned below the focus ring and having an edge electrode adsorbed to the focus ring with an electrostatic force on an upper end thereof;
The heat transfer passage,
supplying a heat transfer medium to a space formed between the focus ring and the coupling ring;
A first flow path extending from the interspace to an upper end of the insulating plate, and a second flow path extending from the first flow path and vertically penetrating the insulating plate,
The second flow path is provided in a spiral shape. According to claim 6,
The first flow path is provided in a straight line. According to claim 7,
The coupling ring,
A substrate processing apparatus further comprising a dielectric layer provided thereon, and wherein the edge electrode is positioned below the dielectric layer. According to any one of claims 6 to 8,
The heat transfer medium is
A substrate processing apparatus provided with an inert gas containing helium (He).

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