KR101970981B1 - Support unit, Apparatus and method for treating a substrate - Google Patents
Support unit, Apparatus and method for treating a substrate Download PDFInfo
- Publication number
- KR101970981B1 KR101970981B1 KR1020150146875A KR20150146875A KR101970981B1 KR 101970981 B1 KR101970981 B1 KR 101970981B1 KR 1020150146875 A KR1020150146875 A KR 1020150146875A KR 20150146875 A KR20150146875 A KR 20150146875A KR 101970981 B1 KR101970981 B1 KR 101970981B1
- Authority
- KR
- South Korea
- Prior art keywords
- plate
- substrate
- cooling
- electrode
- conductive material
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000001816 cooling Methods 0.000 claims abstract description 78
- 239000004020 conductor Substances 0.000 claims description 24
- 239000012809 cooling fluid Substances 0.000 claims description 15
- 239000011247 coating layer Substances 0.000 claims description 13
- 239000012212 insulator Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims 1
- 238000003672 processing method Methods 0.000 abstract description 4
- 238000002347 injection Methods 0.000 description 23
- 239000007924 injection Substances 0.000 description 23
- 238000009792 diffusion process Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 230000005674 electromagnetic induction Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 electrons Chemical class 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention provides a substrate processing apparatus and a substrate processing method. A substrate processing apparatus according to the present invention includes: a chamber having a processing space therein; A support unit located in the processing space and supporting the substrate; A gas supply unit for supplying a process gas into the chamber, the support unit comprising: a plate assembly; And a cooling tube provided in the plate assembly and having a cooling channel, the cooling tube being grounded.
Description
The present invention relates to a support unit, a substrate processing apparatus including the same, and a substrate processing method.
Plasma is an ionized gas state that is generated by a very high temperature, a strong electric field, or RF electromagnetic fields, and consists of ions, electrons, and radicals. The semiconductor device fabrication process employs a plasma to perform an etching process. The etching process is performed by colliding the ion particles contained in the plasma with the substrate. The etching process is performed inside the chamber. A process gas is supplied into the chamber, and high-frequency power is applied to the chamber to excite the process gas into a plasma state.
1 shows a general support unit in a substrate processing apparatus. A first dielectric plate 1 for supporting the substrate w and a
On the other hand, when the substrate is to be unloaded from the first dielectric plate 1, the substrate w must not be chucked to the first dielectric plate 1. However, as described above, there is a problem that the substrate is chucked by the unintentional chucking force, and the substrate is damaged in the process of unloading the substrate.
The present invention is to provide a support unit, a substrate processing apparatus, and a processing method that can prevent a substrate from being damaged by preventing chucking phenomenon of the substrate that is not related to the process.
The objects of the present invention are not limited thereto, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.
The present invention provides a substrate processing apparatus.
According to an embodiment of the present invention, there is provided a plasma processing apparatus comprising: a chamber having a processing space therein; A support unit located in the processing space and supporting the substrate; A gas supply unit for supplying a process gas into the chamber, the support unit comprising: a plate assembly; And a cooling tube provided in the plate assembly and having a cooling channel, the cooling tube being grounded.
According to one embodiment, the plate assembly includes: a support plate on which a substrate is placed; An electrode plate provided below the support plate; And a lower plate provided below the electrode plate, wherein the cooling pipe is provided inside the lower plate.
According to one embodiment, the support plate and the lower plate are provided with an insulator, and the electrode plate is provided with a conductive material.
According to one embodiment, the cooling tube includes a body of conductive material, and the body is grounded.
According to one embodiment, the cooling pipe is provided as a coating layer of a conductive material for coating the outer wall of the cooling channel, and the coating layer is grounded.
According to one embodiment, a high frequency power source is electrically connected to the electrode plate.
According to one embodiment, an electrostatic electrode is provided within the support plate for electrostatically attracting the substrate to the support plate.
The present invention provides a support unit.
According to an embodiment of the present invention, there is provided a plate assembly comprising: a plate assembly; And a cooling pipe provided in the plate assembly and having a cooling channel, wherein the cooling pipe is grounded.
According to one embodiment, the plate assembly includes: a support plate on which a substrate is placed; An electrode plate provided below the support plate; And a lower plate provided below the electrode plate, wherein the cooling pipe is provided inside the lower plate.
According to one embodiment, the support plate and the lower plate are provided with an insulator, and the electrode plate is provided with a conductive material.
According to one embodiment, the cooling tube includes a body of conductive material, and the body is grounded.
According to one embodiment, the cooling pipe is provided as a coating layer of a conductive material for coating the outer wall of the cooling channel, and the coating layer is grounded.
According to one embodiment, a high frequency power source is electrically connected to the electrode plate.
According to one embodiment, an electrostatic electrode is provided within the support plate for electrostatically attracting the substrate to the support plate.
The present invention provides a substrate processing method.
According to an embodiment of the present invention, there is provided a plasma processing apparatus for processing a substrate by placing a substrate in a supporting unit to which a high-frequency power is applied, supplying a gas onto the substrate in a plasma state to control a temperature of the substrate, And discharges the charge generated by the flowing cooling fluid to the outside through a cooling pipe through which the cooling fluid flows.
According to one embodiment, the support unit has a lower plate provided with an insulator, the cooling tube is provided with a conductive material in the lower plate, and the cooling tube is grounded.
According to one embodiment, the support unit has a support plate provided with an insulator, and the support plate has an electrostatic electrode to which a DC power is applied.
The present invention can prevent the chucking phenomenon of the substrate irrelevant to the process, thereby preventing the substrate from being damaged.
The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.
1 is a view showing a general supporting unit in a substrate processing apparatus.
2 is a view showing a substrate processing apparatus according to the present invention.
FIG. 3 is a plan view showing the lower plate of FIG. 2. FIG.
4 is a cross-sectional view showing one embodiment of A-A 'in FIG.
5 is a cross-sectional view showing another embodiment of A-A 'in FIG.
Figure 6 is a view showing the state of charge in the support unit of Figure 2;
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.
In an embodiment of the present invention, a substrate processing apparatus for etching a substrate using plasma will be described. However, the present invention is not limited thereto, and is applicable to various kinds of apparatuses that perform a process using a support unit provided with a cooling pipe.
2 is a view showing a substrate processing apparatus according to an embodiment of the present invention.
Referring to Fig. 2, the substrate processing apparatus 10 processes the substrate W using plasma. The substrate processing apparatus 10 includes a
The
A heater 150 is provided on the wall of the
The
The
The plate assembly 205 includes a
The substrate W is placed on the
A
The
The
A
FIG. 3 is a plan view showing the lower plate of FIG. 2. FIG.
The
4 is a cross-sectional view showing one embodiment of A-A 'in FIG. Referring to FIG. 4, the cooling
5 is a cross-sectional view showing another embodiment of A-A 'in FIG. Referring to FIG. 5, the
The
The
The showerhead unit 300 is located in the upper part of the
The
The
A
The
The
The
The insulating
A gas supply unit (400) supplies a process gas into the chamber (100). The
The plasma source excites the process gas into the plasma state within the
The
The
The
The
The
Hereinafter, a method of processing a substrate using the above-described substrate processing apparatus will be described.
Referring to FIG. 6, as the cooling fluid flows through the
In the above-described embodiments, capacitively coupled plasma (CCP) is used as a plasma source, but an inductively coupled plasma (ICP) source is also possible.
The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.
10: substrate processing apparatus 100: chamber
200: support unit 205: plate assembly
210: support plate 220: electrode plate
240: Lower plate 290: Cooling tube
294: Body 296: Coating layer
Claims (17)
A chamber having a processing space therein;
A support unit located in the processing space and supporting the substrate by an electrostatic force;
And a gas supply unit for supplying a process gas to the chamber,
The support unit includes:
A plate assembly;
And a cooling pipe provided in the plate assembly and having a cooling channel provided with a conductive material and supplied with a cooling fluid,
Wherein the cooling pipe is grounded to prevent a chucking phenomenon due to electrostatic force generated by friction with the cooling pipe while flowing the cooling fluid through the cooling channel,
The plate assembly includes:
A support plate on which the substrate is placed;
An electrode plate provided below the support plate;
And a lower plate provided below the electrode plate,
The cooling tube is provided inside the lower plate,
Wherein the support plate and the lower plate are provided as an insulator, and the electrode plate is provided as a conductive material.
The cooling tube comprising a body of conductive material,
Wherein the body is grounded.
Wherein the cooling tube is provided as a coating layer of a conductive material for coating an outer wall of the cooling passage,
Wherein the coating layer is grounded.
And a high-frequency power source is electrically connected to the electrode plate.
Wherein the support plate is provided with an electrostatic electrode for electrostatically attracting the substrate to the support plate.
A plate assembly;
And a cooling pipe provided in the plate assembly and having a cooling channel provided with a conductive material and supplied with a cooling fluid,
Wherein the cooling pipe is grounded to prevent a chucking phenomenon due to electrostatic force generated by friction with the cooling pipe while flowing the cooling fluid through the cooling channel,
The plate assembly includes:
A support plate on which the substrate is placed;
An electrode plate provided below the support plate;
And a lower plate provided below the electrode plate,
The cooling tube is provided inside the lower plate,
Wherein the support plate and the lower plate are provided as an insulator, and the electrode plate is made of a conductive material.
The cooling tube comprising a body of conductive material,
Wherein the body is grounded.
Wherein the cooling tube is provided as a coating layer of a conductive material for coating an outer wall of the cooling passage,
And the coating layer is grounded.
And a high-frequency power source is electrically connected to the electrode plate.
Wherein the support plate is provided with an electrostatic electrode for electrostatically attracting the substrate to the support plate.
Wherein the support plate has an electrostatic electrode to which a DC power source is applied.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020150146875A KR101970981B1 (en) | 2015-10-21 | 2015-10-21 | Support unit, Apparatus and method for treating a substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020150146875A KR101970981B1 (en) | 2015-10-21 | 2015-10-21 | Support unit, Apparatus and method for treating a substrate |
Publications (2)
Publication Number | Publication Date |
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KR20170046476A KR20170046476A (en) | 2017-05-02 |
KR101970981B1 true KR101970981B1 (en) | 2019-04-22 |
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KR1020150146875A KR101970981B1 (en) | 2015-10-21 | 2015-10-21 | Support unit, Apparatus and method for treating a substrate |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR102336731B1 (en) * | 2020-01-31 | 2021-12-06 | 세메스 주식회사 | Apparatus for treating substrate |
JP2023525797A (en) * | 2020-05-14 | 2023-06-19 | ラム リサーチ コーポレーション | Evaporative cooling of electrostatic chuck |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005033181A (en) * | 2003-05-12 | 2005-02-03 | Tokyo Electron Ltd | Treatment apparatus |
KR100846119B1 (en) * | 2007-02-23 | 2008-07-15 | 세메스 주식회사 | Plasma generating unit and apparatus with the same, and substrate treating method of the apparatus |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2943691B2 (en) * | 1996-04-25 | 1999-08-30 | 日本電気株式会社 | Plasma processing equipment |
KR102278077B1 (en) * | 2013-08-14 | 2021-07-16 | 세메스 주식회사 | Supporting unit and apparatus and method for treating substrate comprising the same |
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2015
- 2015-10-21 KR KR1020150146875A patent/KR101970981B1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005033181A (en) * | 2003-05-12 | 2005-02-03 | Tokyo Electron Ltd | Treatment apparatus |
KR100846119B1 (en) * | 2007-02-23 | 2008-07-15 | 세메스 주식회사 | Plasma generating unit and apparatus with the same, and substrate treating method of the apparatus |
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KR20170046476A (en) | 2017-05-02 |
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