KR102061415B1 - Plasma processing apparatus and gas shower head - Google Patents

Abstract

(Object) It aims at improving the uniformity of a plasma process.
(Solution means) A plasma processing apparatus for plasma processing a substrate mounted on a mounting table in a processing container, comprising: a metal window having a plurality of conductive partial window portions formed in the processing container opposite the mounting table, and the partial window portion; And a partition member of an insulator provided between the partial window portion and the processing container, an antenna provided above the metal window, and for converting the processing gas into plasma by inductive coupling, and on the processing container side of the partition member. A cover member of an insulator covering a surface and covering an edge portion of the adjacent partial window portion, each of the plurality of partial window portions has a plurality of first gas holes, and the cover member has a plurality of second gas holes, At least one of the plurality of first gas holes communicates with the plurality of second gas holes inside the cover member. A plasma processing apparatus is provided that extends to the surface on the processing vessel side.

Description

Plasma processing unit and gas shower head {PLASMA PROCESSING APPARATUS AND GAS SHOWER HEAD}

The present invention relates to a plasma processing apparatus and a gas shower head.

BACKGROUND ART Inductively coupled plasma processing apparatuses are known in which a processing gas is converted into plasma by inductive coupling, and plasma processing of a substrate to be processed mounted on a mounting table in a processing container. In such a plasma processing apparatus, the gas shower head which provides a some gas hole in the plate-shaped member used as the metal window provided in the upper part of a plasma processing apparatus, and supplies a process gas from a some gas hole into a process container is provided. It is proposed (for example, refer patent document 1).

Japanese Unexamined Patent Publication No. 2017-27775 Japanese Patent No.5582816 Japanese Unexamined Patent Publication No. 2013-149377 Japanese Patent No. 3599619 Japanese Unexamined Patent Publication No. 2015-22806 Japanese Unexamined Patent Publication No. 2014-179311

In the case where the metal window is divided into a plurality of partial window portions, the insulating portions are partitioned between the partial window portions to electrically insulate the adjacent partial window portions so that a high frequency current does not flow between the adjacent partial window portions. Doing. In the structure of such a metal window, since a gas hole cannot be provided between partial window parts, it becomes difficult to supply gas to the space in the processing container located between the partial window parts. As a result, a distribution arises in the result of a plasma process, such as the etching rate in the lower part between partial window parts falling.

On the other hand, it is considered to increase the gas flow rate supplied into a processing container and to raise the etching rate in the lower part between partial window parts. However, in this case, the etching rate immediately below the partial window portion becomes too high, and the uniformity of the plasma process such as etching cannot be improved.

In one aspect, the present invention aims to improve the uniformity of the plasma process.

In order to solve the said subject, according to one aspect, the plasma processing apparatus which plasma-processes the to-be-processed board | substrate mounted in the mounting table in a processing container, Comprising: The some electroconductive partial window part provided in the said processing container opposite the mounting table. And a partition member of an insulator provided between the metal window, the partial window portion, and between the partial window portion and the processing container, and an upper portion of the metal window, the antenna for plasmalizing the processing gas by inductive coupling; A cover member of an insulator covering the side of the processing container side of the partition member, and covering an edge portion of the adjacent partial window portion, each of the plurality of partial window portions has a plurality of first gas holes, and the cover member Has a plurality of second gas holes, and at least any of the plurality of first gas holes inside the cover member A plasma processing apparatus is provided that extends to the side of the processing container such that one and a plurality of the second gas holes communicate with each other.

According to one aspect, it is possible to improve the uniformity of the plasma process.

1 is a diagram illustrating an example of a plasma processing apparatus according to one embodiment.
2 shows an example of a plan view of a metal window according to one embodiment.
3 is a sectional view and a sectional view showing an example of a cover member according to one embodiment.
4 is a diagram illustrating an example of a gas hole provided in a cover member according to the first embodiment.
5 is a view showing another example of a gas hole provided in the cover member according to the second embodiment and its modification.

EMBODIMENT OF THE INVENTION Hereinafter, the form for implementing this invention is demonstrated with reference to drawings. In addition, in this specification and drawing, duplication description is abbreviate | omitted by attaching | subjecting the same code | symbol about a substantially identical structure.

[Overall Configuration of Plasma Processing Unit]

First, the whole structure of the plasma processing apparatus 1 which concerns on one Embodiment of this invention is demonstrated, referring FIG. 1 shows the overall configuration of a plasma processing apparatus 1 according to an embodiment of the present invention. In this embodiment, an inductively coupled plasma etching apparatus is used as an example of the plasma processing apparatus 1.

However, the plasma processing apparatus 1 according to the present embodiment is not limited to the etching apparatus, but may be an inductively coupled film forming apparatus. The plasma processing apparatus 1 is a metal film when forming a thin film transistor on a rectangular substrate which is a substrate to be processed, for example, a glass substrate for a flat panel display (hereinafter referred to as "substrate G"). And a plasma treatment such as an indium tin oxide (ITO) film, an oxide film and the like, an etching process for etching these films, and an ashing process of the resist film. Here, as FPD, a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), etc. are illustrated. In addition, the plasma processing apparatus 1 is not limited to the substrate G for FPD, but can also be used for the above-mentioned various plasma processes with respect to the board | substrate G for solar panels.

The plasma processing apparatus 1 has a square cylindrical processing container 10 made of a conductive material, for example, aluminum whose inner wall surface is anodized. The processing container 10 is electrically grounded. An opening is formed in the upper surface of the processing container 10, and the opening is hermetically closed by the metal window 3. The space surrounded by the processing container 10 and the metal window 3 is a plasma processing space U in which plasma is generated.

The metal frame 11 is provided in the upper surface side of the side wall of the processing container 10. The top plate portion 61 is disposed above the metal window 3, and the top plate portion 61 is supported by the side wall portion 63 provided on the metal frame 11. Between the processing container 10 and the metal frame 11, the sealing member 110, such as an O-ring, is provided and the plasma processing space U is kept airtight. The processing container 10 and the metal frame 11 constitute the processing container 10 of the present embodiment. On the sidewall of the plasma processing space U, a carrying in and out port 101 for carrying in and carrying out the glass substrate G and a gate valve 102 for opening and closing the in and out ports 101 are provided.

The space enclosed by the metal window 3, the side wall portion 63 and the top plate portion 61 is an antenna chamber 50. The high frequency antenna 5 is arrange | positioned inside the antenna chamber 50 so that the partial window part 30 may contact. The high frequency antenna 5 is spaced apart from the partial window portion 30, for example, with a spacer made of an insulator (not shown) interposed therebetween. The high frequency antenna 5 is formed in a vortex shape so as to circulate along the circumferential direction of the rectangular metal window 3 in the plane corresponding to each partial window portion 30. The shape of the high frequency antenna 5 is not limited to vortex, but may be an annular antenna having one or a plurality of antenna lines as annular. In addition, if the antenna line is provided so that it may circulate along the circumferential direction in the surface corresponding to each window part 30 which comprises the metal window 3 or the metal window 3, the structure of the high frequency antenna 5 will be Does not matter.

As shown in FIG. 1 and FIG. 2 which saw the metal window 3 from the plasma processing space U side in plan view, the metal frame 11 provided in the upper surface side of the side wall of the processing container 10 is made of metal, such as aluminum. It is a rectangular frame body.

The metal window 3 is divided into a plurality of partial window portions 30. Each partial window portion 30 is made of, for example, a nonmagnetic material and an electrically conductive metal, aluminum or an alloy including aluminum. The partial window part 30 is divided into various shapes and several numbers as needed. Between the metal frame 11 and the partial window part 30, and between the adjacent partial window part 30, it is partitioned by the partition member 31 of an insulator according to the division shape of the partial window part 30. As shown in FIG.

The partial window portions 30 which are divided from each other are electrically insulated from the metal frame 11 or the processing vessel 10 on the lower side thereof by the partition member 31, and the neighboring partial window portions 30 are separated from each other by the partition member ( 31) electrically insulated.

The partition member 31 is formed of an insulator made of Teflon (registered trademark) or resin, for example. The high frequency current supplied to the high frequency antenna 5 flows through the surfaces of the plurality of partial window portions 30, and an induction electric field is generated by the electric current flowing on the surface of the processing container 10 side, and the induction electric field is generated. At the bottom of the metal window 3, the process gas dissociates.

In this embodiment, each of the some partial window part 30 insulated by the partition member 31 is isolate | separated electrically. For this reason, in the plasma processing apparatus 1 which concerns on this embodiment, an induction electric field generate | occur | produces in each partial window part 30 separately. Therefore, the induction electric field generated in the plurality of partial window portions 30 is controlled by the size or arrangement of the respective partial window portions 30, thereby controlling the induction electric field generated in the surface of the processing container 10 side of the metal window 3. The distribution of the etching rate can be improved.

The surface on the processing container 10 side of the partition member 31 is covered by the cover member 32 of the insulator. In order to protect the partition member 31 from plasma, it is preferable that the cover member 32 covers all surfaces of the partition member 31 on the plasma processing space U side. However, if the cover member 32 covers all the surfaces of the partition member 31 on the plasma processing space U side, the area of the partial window portion 30 exposed to the processing space U side becomes small. Since the plasma is generated in the vicinity of the portion exposed to the processing space U of the partial window portion 30, the intensity of the plasma is weakened when the area of the partial window portion 30 becomes small. In addition, the induction electric field is weakened by the protrusion of the ceramic of the cover member 32. Therefore, it is preferable that the cover member 32 covers the minimum range on the plasma processing space U side of the partition member 31.

1, the temperature control flow path 307 is formed in each partial window part 30. As shown in FIG. The partial window part 30 is adjusted to preset temperature by passing a cooling medium or a heating medium through the temperature adjusting flow path 307.

The cover member 32 which concerns on this embodiment is divided in multiple numbers, and is arrange | positioned so that a part of partition member 31 may be covered. For example, each cover member 32 is made of a ceramic member such as alumina molded into an elongated flat plate shape. Thereby, the area which the some cover member 32 covers the process container 10 side of the metal window 3 can be suitably identified. In this embodiment, the cover member 32 covers the partition member 31 of the diagonal and center of the metal window 3. However, the size and arrangement of the plurality of cover members 32 covering the partition member 31 are not limited to this, and various patterns can be adopted depending on the number of divisions of the partial window portion 30 and the shape of the partial window portion 30. have. The size of the cover member 32 may be further divided or the number of the cover members 32 may be changed. The cover member 32 may be arranged to cover some or all of any place of the partition member 31 in consideration of the intensity of the plasma.

In the plasma processing apparatus 1, the partition member 31 is a fluororesin such as PTFE (Polytetrafluoroethylene). For example, PTFE has a volume resistivity of> 10 ¹⁸ [Ω · cm (23 ° C)] and a density of about 2.1 to 2.2 [g / cm ³ ]. By employing such a resin partition member 31, for example, alumina (volume resistivity> 10 ¹⁴ [Ω · cm (23 ° C.)] or so, as a material of the partition member 31, density of about 3.9 [g / cm ^3] In comparison with the case of employing []), it is possible to realize high insulation performance and weight reduction of the metal window 3 including the partition member 31 at the same time.

As shown in FIG. 1 and FIG. 2, each of the plurality of partial window portions 30 is provided with a plurality of gas holes 302 opening to the plasma processing space U side. Although only a part of the gas hole 302 is shown in FIG. 2, a plurality of gas holes 302 are formed in all the partial windows 30. In addition, the plurality of cover members 32 are provided with a plurality of gas holes 402 which open to the plasma processing space U side. Thereby, the some window part 30 and the some cover member 32 of this structure have the function of the gas shower head for supplying process gas.

In order to improve the plasma resistance of the partial window part 30, the surface of the process container 10 side of each partial window part 30 is plasma-coated. Specific examples of the plasma coating include anodization treatment and ceramic thermal spraying treatment.

Returning to FIG. 1, the mounting table 13 for mounting the substrate G is provided on the side of the plasma processing space U that faces the metal window 3. The mounting table 13 is made of a conductive material, for example, aluminum whose surface is anodized. The substrate G mounted on the mounting table 13 may be adsorbed and held by the electrostatic chuck. The mounting table 13 is provided on the bottom surface of the processing container 10 via the insulator frame 14.

The second high frequency power source 152 is connected to the mounting table 13 via a matching unit 151. The second high frequency power supply 152 applies a high frequency power for bias, for example, a high frequency power of 3.2 MHz to the mounting table 13. Ions in the plasma can be introduced into the substrate G by the high frequency power for bias. Moreover, in the mounting table 13, in order to control the temperature of the board | substrate G, temperature adjusting mechanisms, such as a chiller which functions as a heating means or a cooling means, and the mechanism which supplies electrothermal gas to the back surface of the board | substrate G are provided You can arrange.

An exhaust port 103 is formed in the bottom of the processing container 10, and an exhaust device 12 such as a turbo molecular pump or a dry pump is connected to the exhaust port 103. The inside of the plasma processing space U is evacuated by the exhaust device 12 at a pressure during plasma processing.

Each high frequency antenna 5 is connected with a first high frequency power supply 512 via a matching unit 511. Each high frequency antenna 5 is supplied with a high frequency power of 13.56 MHz, for example, from the first high frequency power supply 512. As a result, an eddy current is caused on the surface of each of the partial windows 30 during the plasma processing, and an induction electric field is formed inside the plasma processing space U by the eddy current. The processing gas is supplied from the plurality of gas holes 302 and the plurality of gas holes 402 provided in the metal window 3 to the plasma processing space U, and is plasma inside the plasma processing space U by an induction electric field. Become

As shown in FIG. 1, the gas diffusion chamber 301 formed in each partial window part 30 is connected to the gas supply source 42 via the gas supply pipe 41. As shown in FIG. The gas supply source 42 is supplied with a processing gas necessary for the film forming process, etching process, ashing process and the like described above. The processing gas supplied from the gas supply source 42 passes through the gas diffusion chamber 301 from the gas supply pipe 41, and plasmas from a plurality of gas holes 302 and 402 formed on the ceiling surface side of the plasma processing space U. FIG. In the processing space U, it is supplied in a shower shape. In addition, although FIG. 1 shows the state which connected the gas supply source 42 to the one partial window part 30 for the convenience of illustration, in fact, the gas diffusion chamber 301 of each partial window part 30 is a gas supply source ( 42).

The control unit 8 is provided in the plasma processing apparatus 1. The control part 8 consists of a computer which has a CPU (Central Processing Unit) and a memory, and vacuum-exhausts the inside of the plasma processing space U in which the board | substrate G was arrange | positioned in the memory, and uses the high frequency antenna 5, The recipe (program) for making a process gas into plasma and performing the process which processes the board | substrate G is recorded. The recipe may be stored in a storage medium such as a hard disk, a compact disk, a magnet optical disk, or a memory card, and may be installed in the memory.

In the plasma processing apparatus 1 having the above-described configuration, the partial window portions 30 are divided by the partition member 31 of the insulator, and the partial window portions 30 in which currents flowing through the respective partial window portions 30 are adjacent to each other. ) And the processing container 10 side. In such a structure, when there is little gas supplied between the adjacent partial windows 30, the generated plasma is weakened below the adjacent partial windows 30, so that the distribution of the etching rate or the like is not improved. .

Thus, in the gas shower head of the metal window 3 provided in the plasma processing apparatus 1 according to the present embodiment, the partial window portion 30 adjacent to each other is provided by providing a plurality of gas holes 402 in the cover member 32. It is possible to supply the processing gas from the lower side in between. Hereinafter, with reference to the detail of the structure of the gas shower head of the metal window 3 which concerns on 1st and 2nd embodiment, compared with the gas shower head of the metal window 3 which concerns on a comparative example, FIGS. It demonstrates with reference.

[Gas shower head of metal window]

The upper view of FIG. 3 (a) shows an example of a cross section of the cover member 2 according to the comparative example, which is attached to the surface on the processing container 10 side of the gas shower head of the metal window 3. The lower figure of FIG. 3 (a) shows the plane of the upper left quarter of the ceiling surface of the processing container 10. The cross section of the upper figure of FIG. 3 (a) is the A-A cross section of the lower figure of FIG. In the lower view of FIG. 3A, the gas holes 302 are omitted.

The upper figure of FIG.3 (b) shows an example of the cross section at the time of attaching the cover member 32 which concerns on 1st Embodiment to the surface of the process window 10 side of the gas shower head of the metal window 3. . The lower figure of FIG. 3 (b) shows the plane of the upper left quarter of the ceiling surface of the processing container 10. The cross section of the upper figure of FIG. 3 (b) is the B-B cross section of the lower figure of FIG. 3 (b).

<Cover Member According to Comparative Example>

The cover member 2 of the comparative example, which is attached to the surface on the processing container 10 side of the gas shower head of the metal window 3 shown in FIG. 3 (a), is a plate-shaped member, and the adjacent partial window portion 30 is provided. The surface on the processing container 10 side of the partition member 31 provided with the insulator is covered. In such a configuration, the processing gas diffuses into the gas diffusion chamber 301 in the partial window portion 30 and is supplied from the gas hole 302 to the lower portion of the partial window portion 30 in the processing container. In this configuration, since the processing gas is not supplied below the cover member 2 mounted between the partial window portions 30, the etching rate is lowered under the cover member 2.

<Cover member according to the first embodiment>

On the other hand, the cover member 32 which concerns on the surface of the processing container 10 side between the partial window parts 30 shown in FIG. 3 (b) is a partition member 31. It covers and protects the partition member 31 from a plasma, and is arrange | positioned over the edge part of the adjacent partial window part 30. As shown in FIG.

Inside the cover member 32, two gas diffusion chambers 401 are provided on both sides of the partition member 31 in parallel along the longitudinal direction of the partition member 31. The cover member 32 is provided with the some gas hole 402 which communicates with the gas diffusion chamber 401 in the position below the partial window part 30. In this embodiment, the cover member 32 extends to the surface of the processing container 10 side so that at least one of the plurality of gas holes 302 communicates with the plurality of gas holes 402. As a result, the gas diffusion chamber 401 is supplied with the processing gas from at least one of the plurality of gas holes 302.

As shown to the top view of the cover member 32 which concerns on 1st Embodiment to FIG. 4A, it is shown in the edge part (most outer side or the vicinity) of each partial window part 30 among the some gas hole 302. FIG. The formed gas hole 302 is covered by the cover member 32. The cover member 32 is provided with the some gas hole 402 which communicates with the gas diffusion chamber 401 between the some gas hole 302 in the vicinity of the partition member 31 below. In this embodiment, the gas supply path R2 which supplies process gas from the some gas hole 402 provided in the cover member 32 is provided.

In the gas supply path R2, the processing gas is supplied to the gas diffusion chamber 401 from the gas hole 302 formed in the edge portion of each partial window portion 30. In the gas supply path R2, the processing gas is supplied from the gas diffusion chamber 301 to the gas diffusion chamber 401 through the gas hole 302, and the processing container 10 is shower-shaped from the plurality of gas holes 402. Is introduced below between the partial window portions 30 in. Moreover, in the gas supply path R1, process gas is introduce | transduced below the partial window part 30 in the processing container 10 from the many gas hole 302 formed in the partial window part 30 in shower shape. As a result, the processing gas can be introduced into the processing container 10 in a shower shape from the plurality of gas holes 302 and 402 formed in the partial window portion 30.

The modification of 1st Embodiment is shown to FIG. 4 (b). The gas supply path R2 may be provided for each place of the gas hole 302, and in this case, as shown to the modification of FIG. 4 (b), a some place of the diffusion chamber 401 is required.

As described above, in the present embodiment, the gas supply path R2 is formed in addition to the gas supply path R1. As a result, in the present embodiment, the processing gas can be supplied in the shower shape from the plurality of gas holes 302 formed in the partial window portion 30 to the lower portion of the partial window portion 30 using the gas supply path R1. . In addition, the processing gas can be supplied in a shower shape from the plurality of gas holes 402 formed in the cover member 32 to the lower portion between the partial window portions 30 using the gas supply path R2.

With such a configuration, the shower plate of the metal window 3 according to the present embodiment extends the gas ejection openings between the partial window portions 30, thereby expanding the range for supplying gas from the lower surface of the metal window 3. Can be. This makes it possible to discharge the processing gas from the lower surface of the metal window 3 without interruption. As a result, distribution of an etching rate and distribution of a film-forming rate can be controlled favorably. In this way, according to this embodiment, distribution of an etching rate etc. can be improved.

Moreover, in the shower plate of the metal window 3 which concerns on this embodiment, the size and number of the cover member 32 are optimized according to the shape and number of the partial window part 30, and the partial window part of the metal window 3 ( A plurality of cover members 32 are disposed at an optimum position between 30 and between the partial window 30 and the processing container 10. Thereby, process gas can be supplied uniformly from the several gas hole 402 formed in the some cover member 32 located in the optimum position, and the many gas hole 302 formed in the partial window part 30. FIG.

Further, without changing the structure of the plasma processing apparatus 1, the cover member 32 is disposed so as to span the edge portions of the adjacent partial window portions 30, thereby improving plasma process characteristics such as etching rate. Can be. For this reason, the shower plate of the metal window 3 which concerns on this embodiment can be easily applied to the existing plasma processing apparatus 1, and an etching rate etc. can be improved at low cost.

In addition, the gas hole 302 is an example of the 1st gas hole formed in each of the some partial window part 30, and the gas hole 402 is an example of the 2nd gas hole formed in the cover member 32. As shown in FIG.

<Cover member according to the second embodiment>

As shown by L of FIG. 3 (b), in the metal window 3 according to the first embodiment, a portion where the cover member 32 contacts the partial window portion 30 on the outer circumferential side of the cover member 32. Gas may leak from the gap between (L). That is, in the part L which contacts the partial window part 30, clearance management cannot be performed, and since the gas leakage amount cannot be controlled due to the mechanical difference between the plasma processing apparatuses 1, it is a cause of the nonuniformity of gas supply amount. It may become.

Therefore, as shown in FIG. 3 (c), the cover member 32 according to the second embodiment is disposed on the processing container 10 side of the gas shower head of the metal window 3 as a structure in which no gas leaks. An example at the time of sticking to a surface is shown. The lower figure of FIG. 3C shows the plane of the upper left quarter of the ceiling surface of the processing container 10. The cross section of the upper figure of FIG. 3 (c) is the C-C cross section of the lower figure of FIG. 3 (c).

The cover member 32 which concerns on 2nd Embodiment is different from the 1st cover member 32a provided in one side of the adjacent partial window part 30 partitioned by the partition member 31, and the partial window part 30. As shown in FIG. It has the 2nd cover member 32b provided in the side. The first cover member 32a and the second cover member 32b are formed in a ceramic bag.

Specifically, in order to protect the partition member 31 from plasma, the cover member 32 is a plate-shaped ceramic member 34 and a ceramic member attached to the surface of the processing member 10 side of the partition member 31. It has the 1st cover member 32a arrange | positioned adjacent to 34, and the 2nd cover member 32b.

The 1st cover member 32a and the 2nd cover member 32b have the structure which has a hollow part inside with the ceramic member 34 interposed between them. The 1st cover member 32a and the 2nd cover member 32b are provided in parallel along the longitudinal direction of the partition member 31, are mutually isolate | separated, and the groove part 35 is formed between them (FIG. 5 ( a)). The ceramic member 34 is exposed from the groove portion 35.

The hollow portions of the first cover member 32a and the second cover member 32b serve as the gas diffusion chamber 403. In the lower position between the partial window part 30 of the 1st cover member 32a and the 2nd cover member 32b, the some gas hole 404 which communicates with the gas diffusion chamber 403 is formed.

Moreover, in this embodiment, the tubular member 32a1 formed in the 1st cover member 32a is inserted in the gas hole 302b formed in the vicinity of the edge part of the partial window part 30. As shown in FIG. Moreover, the tubular member 32b1 formed in the 2nd cover member 32b is inserted in the other gas hole 302b formed in the vicinity of the edge part of the partial window part 30. As shown in FIG. The O-ring 304 is sealed between the first cover member 32a and the second cover member 32b into which the tubular member 32a1 and the tubular member 32b1 are inserted and the partial window portion 30. . Thereby, gas does not leak from the clearance gap between the 1st cover member 32a, the 2nd cover member 32b, and the partial window part 30. As shown in FIG. Since the gas hole 302b has the structure which the tubular member 32a1 of the 1st cover member 32a and the tubular member 32b1 formed in the 2nd cover member 32b are inserted, the partial window part 30 is carried out. The diameter is larger than that of the other gas holes 302a formed in the grooves.

The first cover member 32a and the second cover member 32b extend to the surface of the processing container 10 side so as to communicate with one or the plurality of gas holes 302b. Thereby, process gas is supplied to the gas diffusion chamber 403 in the 1st cover member 32a and the 2nd cover member 32b from one or some gas hole 302b.

According to the 1st cover member 32a and the 2nd cover member 32b which concerns on 2nd Embodiment of such a structure, the process gas uses the gas supply path R1, and the partial window part 30 in the process container 10 is carried out. It is supplied in the shower shape from the some gas hole 302a at the bottom of the. In addition, the processing gas is supplied in a shower shape from the plurality of gas holes 404a to the lower side between the partial window portions 30 in the processing container 10 by using the gas supply path R2.

The gas supply passage R2 according to the present embodiment has a first route through which the processing gas passes through the inside of the first cover member 32a, and a second route through the inside of the second cover member 32b. Thereby, gas supply which has a 1st route and a 2nd route other than the gas supply path R1 which supplies a process gas directly in the process container 10 from the some gas hole 302a formed in the partial window part 30 is carried out. The furnace R2 can be used to supply the shower container into the processing container 10 from the entire surface of the metal window 3.

In addition, the gas hole 302a, 302b is an example of the 1st gas hole formed in each of the some partial window part 30, and the gas hole 404 is the 1st cover member 32a and the 2nd cover member 32b. It is an example of the 2nd gas hole formed in the. The O-ring 304 is provided in the first cover member 32a and the second cover member 32b, and each of the tubular members 32a1 and 32b1 and the partial window portion 30 inserted into the gas hole 302b. It is an example of the sealing member which seals between.

Adjacent partial window portions 30 are formed of metal. For this reason, in the plasma process, adjacent partial window portions 30 thermally expand, respectively, by heat input from the plasma and heat transfer from the partial window portions 30. In addition, when the inside of the processing container 10 is vacuum-sucked by the exhaust apparatus 12 and it is set as a predetermined vacuum state, the vacuum side (processing container ( 10) side), a large pressure is applied to deform the metal window 3 to the processing container 10 side. Therefore, if the 1st cover member 32a and the 2nd cover member 32b which are affixed over the edge part of the adjacent partial window part 30 are integrated, it will be due to the different movement of the adjacent partial window part 30. The cover member may be broken or broken.

On the other hand, in this embodiment, since the 1st cover member 32a and the 2nd cover member 32b are isolate | separated and provided with respect to each of the adjacent partial window parts 30, of the adjacent partial window part 30, Each cover member can follow different movements. As a result, it is possible to prevent the first cover member 32a and the second cover member 32b from being damaged due to thermal expansion or deformation of each partial window portion 30. However, the 1st cover member 32a and the 2nd cover member 32b may be provided integrally.

In the plasma processing, when the inside of the processing container 10 is vacuum sucked by the exhaust device 12 and brought into a predetermined vacuum state, the vacuum side (processing) is performed from the atmospheric side (antenna chamber 50 side) of the metal window 3. A large pressure is applied to the container 10 side, and the metal window 3 is bent to the processing container 10 side. Therefore, in the case where the gas diffusion chamber is formed by contacting the metal window 3 and the cover member, when the dimension of the gap of the contact surface is increased due to the bending of the metal window 3 or the heat input from the plasma, gas diffusion from the gap is performed. There is a possibility that the gas in the seal leaks.

On the other hand, according to the gas shower head of the metal window 3 which concerns on this embodiment, since the inside of the 1st cover member 32a and the 2nd cover member 32b has a hollow structure, a process gas is used as a gas hole ( Since it can supply from 404 in the shower shape without leakage, the controllability of a process gas can be improved.

FIG. 5A is a plan view of the first cover member 32a and the second cover member 32b of FIG. 3C. According to this, process gas is introduce | transduced below the partial window part 30 in the processing container 10 directly from the many gas hole 302a formed in the partial window part 30 using the gas supply path R1. In addition, the processing gas passes through the plurality of gas holes 404 formed in the first cover member 32a and the second cover member 32b according to the second embodiment using the gas supply path R2, and then the processing container ( It is introduced below between the partial windows 30 in 10). Thereby, the etching rate etc. in the processing container 10 can be improved.

5B shows a cover member 32 according to a modification of the second embodiment. According to this, in the cover member 32 which concerns on the modification of 2nd Embodiment, of the 1st cover member 32a and the 2nd cover member 32b inserted into the gas hole 302b and the gas hole 302b, The tubular members 32a1 and 32b1 are formed in a slit shape. By this, process gas of sufficient flow volume can be supplied in the shower shape below the partial window part 30, ensuring the conductance of gas supply path R2. Thereby, the etching rate etc. in the processing container 10 can be improved.

As mentioned above, when the cover member which concerns on each embodiment of such a structure is used for the plasma processing apparatus 1, compared with the case which does not use these cover members, the area which can supply the process gas of the metal window 3 to shower shape is 13 Could increase by%.

As mentioned above, although the plasma processing apparatus and the gas shower head were demonstrated by the said embodiment, the plasma processing apparatus and the gas shower head which concern on this invention are not limited to the said embodiment, A various deformation | transformation and improvement are within the scope of this invention. It is possible. The matter described in the said some embodiment can be combined in the range which does not contradict.

In this specification, the glass substrate G for FPD was mentioned and demonstrated as an example of a to-be-processed substrate. However, the substrate is not limited to this, and may be various substrates used for solar cells, liquid crystal displays (LCDs), semiconductor wafers, photomasks, CD substrates, printed substrates, and the like.

1 plasma processing apparatus 3 metal window
5: high frequency antenna 10: processing container
13: mounting table 30: partial window
31: partition member 32: cover member
32a: first cover member 32b: second cover member
32a1, 32b1: tubular member 34: ceramic member
35: groove 50: antenna chamber
152: second high frequency power supply 301: gas diffusion chamber
302, 302a, 302b: gas hole 304: O ring
401, 403: gas diffusion chamber 402, 404: gas hole
R1: first gas supply path R2: second gas supply path

Claims (10)

A plasma processing apparatus for converting a processing gas into plasma and plasma processing a substrate to be processed mounted on a mounting table in a processing container,
A metal window having a plurality of conductive partial window portions formed in the processing container opposite to the mounting table;
A partition member of an insulator provided between the partial window portion and between the partial window portion and the processing container;
An antenna provided on the upper side of the metal window and for converting the processing gas into plasma by inductive coupling;
Cover member of the insulator which covers the surface of the said partition member on the said processing container side, and latches the edge part of the said adjacent window part
Has,
Each of the plurality of partial windows has a plurality of first gas holes,
The cover member has a plurality of second gas holes, and extends to the surface of the processing container side such that at least one of the plurality of first gas holes and the plurality of second gas holes communicate with each other inside the cover member. ,
In the cover member, a gas diffusion chamber through which a processing gas is supplied from at least one of the plurality of first gas holes is formed,
The metal window includes a first gas supply path for supplying a processing gas into the processing container from the plurality of first gas holes, and a plurality of second windows through the gas diffusion chamber from at least one of the plurality of first gas holes. A second gas supply passage for supplying a processing gas into the processing vessel past a gas hole;
Plasma processing apparatus.
delete delete The method of claim 1,
And the second gas supply passage supplies a processing gas from a plurality of the second gas holes disposed below the adjacent partial window portions.
The method according to claim 1 or 4,
And said gas diffusion chamber is two spaces provided in said cover member along the longitudinal direction of said partition member covered by said cover member.
The method according to claim 1 or 4,
The said gas diffusion chamber is provided in multiple numbers for every said 1st gas hole along the longitudinal direction of the said partition member which the said cover member covers.
A plasma processing apparatus for converting a processing gas into plasma and plasma processing a substrate to be processed mounted on a mounting table in a processing container,
A metal window having a plurality of conductive partial window portions formed in the processing container opposite to the mounting table;
A partition member of the insulator provided between the partial window portion and between the partial window portion and the processing container;
An antenna provided on the upper side of the metal window and for converting the processing gas into plasma by inductive coupling;
Cover member of insulator which covers the surface on the processing container side of the partition member
Has,
The cover member has a first cover member provided at one edge portion of an adjacent partial window portion partitioned by the partition member, and a second cover member provided at the other edge portion of the partial window portion,
The first cover member and the second cover member are formed in a bag shape of ceramics,
Each of the plurality of partial windows has a plurality of first gas holes,
The cover member has a plurality of second gas holes, and extends to the surface of the processing container side such that at least one of the plurality of first gas holes and the plurality of second gas holes communicate with each other inside the cover member.
Plasma processing apparatus.
The method of claim 7, wherein
The first cover member and the second cover member each have tubular members inserted into at least one of the plurality of first gas holes, and a sealing member is provided between each of the tubular members and the partial window portion. Plasma processing device.
A gas shower head used in a plasma processing apparatus for converting a processing gas into plasma by inductive coupling and plasma processing a substrate to be processed mounted on a mounting table in a processing container,
A metal window having a plurality of conductive partial windows;
A partition member of the insulator provided between the partial window portion and between the partial window portion and the processing container;
An antenna provided on the upper side of the metal window and for converting the processing gas into plasma by inductive coupling;
Cover member of the insulator which covers the surface of the said partition member on the said process container side, and latches the edge part of the said adjacent window part
Has,
Each of the plurality of partial windows has a plurality of first gas holes,
The cover member has a plurality of second gas holes, and extends to the surface of the processing container side such that at least one of the plurality of first gas holes and the plurality of second gas holes communicate with each other inside the cover member. ,
In the cover member, a gas diffusion chamber through which a processing gas is supplied from at least one of the plurality of first gas holes is formed.
The metal window includes a first gas supply path for supplying a processing gas into the processing container from the plurality of first gas holes, and a plurality of second windows through the gas diffusion chamber from at least one of the plurality of first gas holes. A second gas supply passage for supplying a processing gas into the processing vessel past a gas hole;
Gas shower head.
A gas shower head used in a plasma processing apparatus for converting a processing gas into plasma by inductive coupling and plasma processing a substrate to be processed mounted on a mounting table in a processing container,
A metal window having a plurality of conductive partial windows;
A partition member of the insulator provided between the partial window portion and between the partial window portion and the processing container;
An antenna provided on the upper side of the metal window and for converting the processing gas into plasma by inductive coupling;
Cover member of insulator which covers the surface on the processing container side of the partition member
Has,
The cover member has a first cover member provided at one edge portion of an adjacent partial window portion partitioned by the partition member, and a second cover member provided at the other edge portion of the partial window portion,
The first cover member and the second cover member are formed in a bag shape of ceramics,
Each of the plurality of partial windows has a plurality of first gas holes,
The cover member has a plurality of second gas holes, and extends to the surface of the processing container side such that at least one of the plurality of first gas holes and the plurality of second gas holes communicate with each other inside the cover member.
Gas shower head.

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