CN105472857A - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
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- CN105472857A CN105472857A CN201510632845.7A CN201510632845A CN105472857A CN 105472857 A CN105472857 A CN 105472857A CN 201510632845 A CN201510632845 A CN 201510632845A CN 105472857 A CN105472857 A CN 105472857A
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- 238000009826 distribution Methods 0.000 description 20
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- 238000005259 measurement Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
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- 230000001939 inductive effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
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Abstract
The invention provides a plasma processing apparatus capable of improving plasma ion density evenness; the plasma processing apparatus comprises the following elements: a chamber; an object holding portion; an object serving as processed object in the chamber; at least one induction coupling antenna with less than one turn; a high frequency power supply. High frequency power is supplied to at least one induction coupling antenna; at least one antenna holding portion enables at least one induction coupling antenna to protrude from one wall of the chamber; the at least one antenna holding portion can change wire segment facing directions of two ends of the corresponding induction coupling antenna in a plane crossing the induction coupling antenna protruding direction, thus holding the corresponding induction coupling antennas on two ends of the induction coupling antenna.
Description
Technical field
The present invention relates to and generate the plasma processing apparatus that plasma carries out the process specified.
Background technology
As this plasma processing apparatus, the device of following inductance coupling high mode is disclosed at patent documentation 1, namely, to just do not terminate around one week and shorter than the length of 1/4 wavelength of the high frequency antenna supply high frequency electric power be made up of the conductor of wire or tabular to produce high frequency magnetic field, utilize this magnetic field to produce plasma, real estate is carried out to the surface treatment of film formation etc.This device is that 4 limits of the vacuum tank of rectangle arrange many antennas respectively in flat shape, by the many antenna ground supply high frequency electric power side by side arranged on 4 limits, carries out the process to large-area substrates.
Patent documentation 1: Japanese Patent No. 3751909 publication
Such as, in order to utilize plasma CVD form the film of uniform film thickness or utilize plasma etching etc. to process uniformly, require to make the plasma ion density in the neighbouring space of object even.
But in plasma CVD, the reaction process in chamber is the technique of the complexity affected by the distance etc. between the wall in the flow of the pressure in chamber, process gas, component, each antenna and chamber.Therefore, in the plasma processing apparatus of patent documentation 1, there is the problem being difficult to the plasma ion density homogenizing made in the neighbouring space of object.In addition, plasma processing apparatus is when such as having 1 antenna etc., antenna number and being few, and the impact because of the wall in chamber becomes larger etc., and also there is the problem being difficult to make plasma ion density homogenizing.
Summary of the invention
The present invention proposes to solve the problem, and its object is to provides a kind of technology that can improve the uniformity of plasma ion density.
In order to solve the problem, the plasma processing apparatus of first method has:
Chamber,
Object maintaining part, keeps the object becoming handling object in described chamber,
At least one inductance coupling high type antenna, the number of turn is less than a circle,
High frequency electric source, at least one inductance coupling high type antenna supply high frequency electric power described,
At least one antenna maintaining part, to make at least one inductance coupling high type antenna described from the mode outstanding in described chamber of a wall portion of described chamber, at least one inductance coupling high type antenna described in keeping respectively relative to a described wall portion;
Each antenna maintaining part of at least one antenna maintaining part described, respectively in the mode changed in the face intersected at the projected direction with this inductance coupling high type antenna of the line segment that the both ends of the inductance coupling high type antenna of the correspondence made at least one inductance coupling high type antenna described can be connected, keep the inductance coupling high type antenna of described correspondence at the both ends of the inductance coupling high type antenna of described correspondence.
The plasma processing apparatus of second method is on the basis of the plasma processing apparatus of first method, and at least one inductance coupling high type antenna described is multiple inductance coupling high type antennas, and at least one antenna maintaining part described is multiple antenna maintaining parts,
Described multiple antenna maintaining part with can independently change respectively line segment that the respective both ends of described multiple inductance coupling high type antenna are connected towards mode keep described multiple inductance coupling high type antenna.
The plasma processing apparatus of Third Way is on the basis of the plasma processing apparatus of second method, described multiple antenna maintaining part keeps described multiple inductance coupling high type antenna in the mode making described multiple inductance coupling high type antenna and be arranged in row along predetermined imaginary axis, and described imaginary axis is the imaginary axis extended along a described wall portion.
The plasma processing apparatus of fourth way is on the basis of the plasma processing apparatus of Third Way, this plasma processing apparatus also has a pair shield member of tabular, described a pair shield member, with across the described multiple inductance coupling high type antennas mode being opposite each other arranged in row, is erect from a described wall portion of described chamber and is arranged.
The plasma processing apparatus of the 5th mode is on the basis of the plasma processing apparatus of fourth way, at least one shield member in described a pair shield member is set to, and can change position on described imaginary axis and apart from least one in the height of a described wall portion of described chamber.
On the basis of plasma processing apparatus plasma processing apparatus of either type in the first to the 5th mode of the 6th mode, described at least one day wire retaining portions is not the tabular component of the inductance coupling high type antenna of the correspondence that can keep at least one inductance coupling high type antenna described
When utilizing inductance coupling high type antenna mutually corresponding at least one inductance coupling high type antenna described and at least one antenna maintaining part described and antenna maintaining part to define respective antenna and corresponding maintaining part,
A described wall portion of described chamber is provided with antenna through hole, this antenna through hole can insert the described respective antenna kept by described corresponding maintaining part, and have with the mode can closed by the described corresponding maintaining part shape corresponding with described corresponding maintaining part
The periphery of the described antenna through hole in the circumference and a described wall portion of described corresponding maintaining part is respectively arranged with the first and second mounting structure, when described corresponding maintaining part is in multiple anglec of rotation respectively along the circumference of described antenna through hole, the circumference of described corresponding maintaining part is detachably arranged on the periphery of described antenna through hole in the mode making described corresponding maintaining part and block described antenna through hole by the first and second mounting structure
Make described respective antenna outstanding and under the state of closing described antenna through hole, utilize the described first and second mounting structure to be arranged on described periphery by described circumference in described chamber keeping the described corresponding maintaining part of described respective antenna.
The plasma processing apparatus of the 7th mode is on the basis of the plasma processing apparatus of the 6th mode, described first mounting structure arranged at the described circumference of described corresponding maintaining part is multiple bolt through holes, described multiple bolt through hole is formed at also can inserting bolt on the first concentric circles on described circumference
Described second mounting structure arranged at the described periphery of described antenna through hole is multiple blind holes, described multiple blind hole be formed in described periphery with described antenna maintaining part forward surface in opposite directions on and have on the second concentric circles of described first concentric circles same diameter, described multiple blind hole at described forward surface opening, and be formed on inner peripheral surface can with the internal thread of the described screw threaded of through described bolt through hole.
The plasma processing apparatus of eighth mode is on the basis of the plasma processing apparatus of the 7th mode, described multiple bolt through hole is to be formed on described first concentric circles at equal intervals, and described multiple blind hole is to be formed at equal intervals on described second concentric circles
The number of the side in described multiple bolt through hole and described multiple blind hole is the multiple of the number of the opposing party.
The plasma processing apparatus of the 9th mode is on the basis of the plasma processing apparatus of eighth mode, and the number of described multiple bolt through hole and the number of described multiple blind hole are the arbitrary number selected from 4,6,8,12 and 24 respectively.
The plasma processing apparatus of the tenth mode is on the basis of the plasma processing apparatus of the 7th mode, and the number of described multiple bolt through hole is more than the number of described multiple blind hole.
[invention effect]
According to the invention of first method, antenna maintaining part with can with change in the face that the projected direction of this inductance coupling high type antenna intersects line segment that the both ends of corresponding inductance coupling high type antenna are connected towards mode, keep this inductance coupling high type antenna at the both ends of this inductance coupling high type antenna.But, inductance coupling high type antenna with regard to being less than 1 circle by the number of turn carries out with regard to the plasma ion density of plasmarized process gas, in the face vertical with the projected direction of inductance coupling high type antenna, the density on the direction vertical with the line segment making the both ends of inductance coupling high type antenna be connected is higher than the density on this line segment direction.Therefore, by utilize antenna maintaining part change inductance coupling high type antenna towards, the uniformity of plasma ion density can be improved.
According to the invention of second method, due to can independently change line segment that the respective both ends of multiple inductance coupling high type antenna are connected towards, so the uniformity of plasma ion density can be improved in wide region.
According to the invention of Third Way, because multiple inductance coupling high type antenna is arranged in row along imaginary axis, so can improve the uniformity of plasma ion density in the scope that width is wide, this imaginary axis extends along a wall portion of chamber.
According to the invention of fourth way, a pair shield member of tabular is to erect setting across the multiple inductance coupling high type antennas mode being opposite each other arranged in row from a wall portion of chamber.Therefore, by utilizing shield member to improve the plasma ion density caused by the inductance coupling high type antenna at two ends, the decline of this plasma ion density can be suppressed.
According to the invention of the 5th mode, at least one in a pair shield member is set to change position on the imaginary axis direction of the orientation of the multiple inductance coupling high type antenna of regulation and apart from least one in the height of a wall portion of chamber.By making shield member close to inductance coupling high type antenna, plasma ion density can be improved.In addition, even if the height improving shield member also can improve plasma ion density.Therefore, it is possible to adjust the plasma ion density caused by the inductance coupling high type antenna at two ends more subtly, suppress the decline of plasma ion density further.
According to the invention of the 6th mode, a wall portion of chamber is provided with antenna through hole, this antenna through hole has the shape corresponding with the antenna maintaining part (corresponding maintaining part) as tabular component and is closed by this antenna maintaining part.And, the periphery of the antenna through hole in the circumference and this wall portion of antenna maintaining part, be respectively arranged with the first and second mounting structure, when corresponding maintaining part is in multiple anglec of rotation respectively along the circumference of antenna through hole, the circumference of antenna maintaining part is detachably arranged on the periphery of antenna through hole in the mode making antenna maintaining part and block antenna through hole by the first and second mounting structure.Therefore, by changing the anglec of rotation of corresponding maintaining part, can easily change the respective antenna kept by corresponding maintaining part towards (line segment making both ends connect towards).
According to the invention of the 7th mode, by making the bolt of in-and-out bolt through hole and the internal screw-thread screw formed at the inner peripheral surface of blind hole, the periphery of the circumference of antenna maintaining part and antenna through hole can be firmly fixed, improving the seal in chamber.
According to the invention of eighth mode, the number of the side in multiple bolt through hole and multiple blind hole is the multiple of the number of the opposing party.Therefore, it is possible to make the number of the anglec of rotation of the corresponding maintaining part of the part of the side in multiple bolt through hole and multiple blind hole and whole alignings of the opposing party, the number of the few side in the number of unnecessary bolt through hole and the number of blind hole.Thus, even if cut down the number of the side in bolt through hole and blind hole, also inductance coupling high type antenna (making the line segment that the both ends of inductance coupling high type antenna connect) can be set as multiple towards.
According to the invention of the 9th mode, the number of multiple bolt through hole and the number of multiple blind hole are the arbitrary number selected from 4,6,8,12 and 24 respectively.If increase the number of bolt through hole and blind hole, then use more bolt that antenna maintaining part is fixed on the periphery of antenna through hole more firmly, therefore improve the seal in chamber, and on the other hand, the manufacturing cost of bolt through hole and blind hole is increased.Therefore, if determine bolt through hole and blind hole number separately as in the present invention, then realize the raising of the airtight performance in chamber and the decline of cost simultaneously.
According to the invention of the tenth mode, due to the number of the unnecessary blind hole of number of the bolt through hole of low cost of manufacture compared with blind hole, so the manufacturing cost of device can be reduced.
Accompanying drawing explanation
Fig. 1 is the YZ end view of the schematic configuration of the plasma processing apparatus schematically showing execution mode.
Fig. 2 is the A-A cutaway view of Fig. 1.
Fig. 3 is the figure of an example of configuration for illustration of inductance coupling high type antenna.
Fig. 4 is the vertical view of the schematic configuration of the antenna maintaining part schematically showing Fig. 2.
Fig. 5 is the B-B cutaway view of Fig. 4.
Fig. 6 is the C-C cutaway view of Fig. 4.
Fig. 7 is the stereogram of the schematic configuration schematically showing the base plate with multiple antenna maintaining part.
Fig. 8 is the figure of the measurement example representing the plasma ion density distribution utilizing 1 LIA to generate with contour map form.
Fig. 9 represents the figure of plasma ion density distribution relative to the measurement example of the variation of pressure with curve form.
Figure 10 is the figure of the measurement example representing the plasma ion density distribution utilizing 2 LIA to generate with curve form.
Figure 11 is the figure schematically showing the plasma ion density distribution that 1 LIA that utilization does not arrange barricade around generates with contour map form.
Figure 12 is the YZ end view of other structure example of the plasma processing apparatus schematically showing execution mode.
Wherein, description of reference numerals is as follows:
100,100A plasma processing apparatus
1 treatment chamber
2 keep conveying unit (object maintaining part)
9 substrates
11 top boards (wall portion)
12 antenna through holes
13 blind holes
4 plasma generation portions
41 inductance coupling high type antennas
61 gas supply parts
80 antenna maintaining parts
83 bolt through holes
90 bearings
430 matching boxes
440 high frequency electric sources
C central point (mid point)
K imaginary axis
L line segment
Embodiment
< execution mode >
<1. the overall structure > of plasma processing apparatus 100
Fig. 1 is the YZ end view of the schematic configuration of the plasma processing apparatus 100 schematically showing execution mode.Fig. 2 is the cutaway view observed from the A-A profile view of the plasma processing apparatus 100 of Fig. 1, is the XZ end view of the schematic configuration schematically showing plasma processing apparatus 100.Fig. 3 is the figure of an example of the configuration of inductance coupling high type antenna 41 for illustration of plasma processing apparatus 100.
Plasma processing apparatus 100 is the devices being formed cvd film (such as diaphragm) by plasma CVD (plasma-enhancedchemicalvapordeposition: plasma enhanced chemical vapor deposition) on the object and substrate 9 (semiconductor substrate such as used for solar batteries, also referred to as " base material ") of band film.
Plasma processing apparatus 100 has: treatment chamber 1, in inner formation processing SPACE V 1; Keep conveying unit 2, keep substrate 9 (specifically, the substrate 9 that bearing 90 arranges), and in the conveyance direction (diagram+Y-direction) of regulation, transport substrate along the transport path of regulation; Heating part 3, heats by the substrate 9 transported; Plasma generation portion 4, makes process SPACE V 1 produce plasma; Structural portion 5, predetermined processing SPACE V 1.
In addition, plasma processing apparatus 100 has to the gas supply part 61 of process SPACE V 1 supply gas and the exhaust portion 7 from Exhaust Gas in treatment chamber 1.In addition, plasma processing apparatus 100 has the control part 8 controlled above-mentioned each structural element.
< treatment chamber 1>
Treatment chamber (also referred to as " vacuum chamber " or be only called " chamber ") 1 is the hollow member in inside with process SPACE V 1.At this, process SPACE V 1 refers to, utilizes inductance coupling high type antenna 41 described later to perform the space of plasma CVD process, in the present embodiment, forms a process SPACE V 1 by structural portion 5.
The top board 11 for the treatment of chamber 1 is configured to, and lower surface 111 is flat-hand position, has inductance coupling high type antenna 41 and structural portion 5 (describing all later) from this lower surface 111 to process SPACE V 1 is projecting.Treatment chamber 1 to base plate vicinity be configured with heating part 3.The transport path (path along diagram Y-direction) keeping conveying unit 2 pairs of substrates 9 is specified in the upside of heating part 3.In addition, treatment chamber 1 ± sidewall of Y side is provided with such as by the carrying-in/carrying-out mouth (omitting diagram) of gate valve opening and closing.
On top board 11, along the direction vertical with the conveyance direction of substrate 9, spaced apart is that row are provided with multiple (being illustrated as 4) antenna through hole 12, make side, top 44 part of the inductance coupling high type antenna 41 kept by antenna maintaining part 80 described later can be projected into process SPACE V 1 side, this antenna through hole 12 has the diameter that can insert inductance coupling high type antenna 41.The size of antenna through hole 12 is less than the size of antenna maintaining part 80.Thus, antenna maintaining part 80 can under the state making side, top 44 part of the inductance coupling high type antenna 41 with both ends 42,43 be projected in treatment chamber 1, blocking antenna through hole 12.
< keeps conveying unit 2>
Keep conveying unit 2 that bearing 90 is remained flat-hand position, and transport along transport path via the carrying-in/carrying-out mouth formed in treatment chamber 1.The upper surface of bearing 90 is configured with object and multiple substrate 9 (in the present embodiment, amounting to 3 substrates 9 along Y-direction) of band film.In addition, above transport path and with in transport path by multiple substrates 9 position in opposite directions transported, be formed with the process SPACE V 1 of carrying out plasma CVD process.
Specifically, maintenance conveying unit 2 has a pair carrying roller 21 configured in opposite directions across transport path and the drive division making a pair carrying roller 21 synchronous rotary driving (omission diagram).A pair carrying roller 21 is provided with such as many groups along the bearing of trend (diagram Y-direction) of transport path.In the structure shown here, abutting with the lower surface of bearing 90 by making each carrying roller 21 and rotate, bearing 90 is transported along transport path.Its result, is moved relative to the process SPACE V 1 with inductance coupling high type antenna 41 by the substrate 9 that bearing 90 keeps.
Keep conveying unit 2 making substrate 9 with process SPACE V 1 part in opposite directions and processing SPACE V 1 in opposite directions in the transport path of substrate 9.Keep conveying unit 2 substrate 9 with process SPACE V 1 in opposite directions time, remain on the position of this substrate 9 in opposite directions on direction relative to structure 5.Also can replace and keep conveying unit 2, and adopt such as to be fixed on and there is the stage mechanism that freely can keep the fixed mechanism of substrate 9 with loading and unloading with process SPACE V 1 part in opposite directions in the lower surface 111 of top board 11.In addition, as substrate 9, also can adopt at the substrate keeping the film-form that the conveyance direction of conveying unit 2 extends.In this case, keep conveying unit 2 can not have bearing 90, each carrying roller 21 directly contacts with the both ends at the back side (with the interarea of the interarea opposite side of film forming object) of this substrate and transports substrate.
< heating part 3>
Heating part 3 is the components to keeping the substrate 9 transported to heat by maintenance conveying unit 2, is configured in the below (i.e. the below of the transport path of substrate 9) keeping conveying unit 2.Heating part 3 can be such as made up of ceramic heater.In addition, can also to the mechanism cooled by the substrate 9 etc. keeping conveying unit 2 to keep after plasma processing apparatus 100 is arranged on CVD process.
< plasma generation portion 4>
Plasma generation portion 4 makes process SPACE V 1 produce plasma.Plasma generation portion 4 has high frequency antenna and the inductance coupling high type antenna 41 of multiple (present embodiment is 4) inductance coupling high type.Specifically, each inductance coupling high type antenna 41 covers with quartzy dielectric and becomes the component of U-shaped to be formed the pipe conductor bends of metal.Plasma generation portion 4 excites unstrpped gas to carry out plasmarized exciting portion in process SPACE V 1.
As shown in Figure 3, multiple inductance coupling high type antenna 41 is along imaginary axis K (preferably with at equal intervals) spaced apart arrangement, and central point (mid point) C at the both ends 42,43 of each inductance coupling high type antenna 41 is arranged on predetermined imaginary axis K.A part (namely the bottom part of U-shaped comprises the part on top 44) for maintenance conveying unit 2 side of each inductance coupling high type antenna 41 is outstanding in maintenance conveying unit 2 side, i.e. treatment chamber 1 from top board 11.Preferred multiple inductance coupling high type antenna 41 arranges along the direction that the conveyance direction (Y-direction) with substrate 9 is intersected (particularly preferably as illustrated, vertical with the conveyance direction of substrate 9 direction (X-direction)) under YZ side-looking.
In addition, in the example in the figures, 4 inductance coupling high type antennas 41 are set along the direction vertical with the conveyance direction of substrate 9, but the number of inductance coupling high type antenna 41 may not be 4, can suitably select its number according to the size etc. for the treatment of chamber 1.In addition, inductance coupling high type antenna 41 also can be configured to rectangular or zigzag.In addition, also an inductance coupling high type antenna 41 can be set according to the size etc. for the treatment of chamber 1.That is, plasma processing apparatus 100 has at least one inductance coupling high type antenna.
One end of each inductance coupling high type antenna 41 is connected with high frequency electric source 440 via matching box (Matchingbox) 430.In addition, the other end ground connection of each inductance coupling high type antenna 41.In the structure shown here, when flowing through high-frequency current (being such as the high-frequency current of 13.56MHz particularly) from high frequency electric source 440 to each inductance coupling high type antenna 41, by the electric field (high-frequency induction electric field) of the surrounding of inductance coupling high type antenna 41 to Accelerating electron, thus produce plasma inductance coupled plasma (InductivelyCoupledPlasma:ICP)).
As mentioned above, inductance coupling high type antenna 41 is in U-shaped.The inductance coupling high type antenna 41 of this U-shaped is equivalent to the inductive coupling antenna that the number of turn is less than 1 circle, and compared with the inductive coupling antenna being more than 1 circle with the number of turn, inductance is little, therefore, the high frequency voltage produced at the two ends of inductance coupling high type antenna 41 declines, and suppresses the swing in high frequency of the plasma potential caused that is coupled by static determinacy of the plasma generated.Therefore, the electrical losses being swung the surplus caused by the plasma potential to above earth potential is lowered, and plasma potential is lowly especially suppressed.In addition, the high frequency antenna of this inductance coupling high type is disclosed in Japanese Patent No. 3836636 publication, Japanese Patent No. 3836866 publication, Japanese Patent No. 4451392 publication, Japanese Patent No. 4852140 publication.
< antenna maintaining part 80>
Blocked by multiple (being illustrated as 4) the antenna maintaining part 80 at the both ends 42,43 keeping inductance coupling high type antenna 41, to keep the seal in treatment chamber 1 respectively at the antenna through hole 12 of multiple (the illustrating 4) of top board 11 formation.
Antenna maintaining part 80 is discoid components.Antenna maintaining part 80, to make inductance coupling high type antenna 41 from the top board 11 for the treatment of chamber 1 to processing the outstanding mode of SPACE V 1, keeps each inductance coupling high type antenna 41 relative to top board 11.In addition, the mode that multiple antenna maintaining part 80 forms a line along predetermined imaginary axis K with multiple inductance coupling high type antenna 41, keep multiple inductance coupling high type antenna 41, this imaginary axis K extends along top board 11.In addition, when treatment chamber 1 has inductance coupling high type antenna 41, antenna through hole 12 and antenna maintaining part 80 also have one respectively.
Antenna maintaining part 80 be with inductance coupling high inductance coupling high can the line segment L be connected with the both ends 42,43 changing the corresponding inductance coupling high type antenna 41 made in multiple inductance coupling high type antenna 41 in the face that the projected direction of this inductance coupling high type antenna 41 intersects, in more preferably vertical with this projected direction face towards mode, keep the component of this inductance coupling high type antenna 41 at the both ends 42,43 of this inductance coupling high type antenna 41.In more detail, multiple antenna maintaining part 80 with can independently change line segment L towards mode keep multiple inductance coupling high type antenna.
By make antenna maintaining part 80 change inductance coupling high type antenna 41 towards, the distribution of the plasma ion density produced by this inductance coupling high type antenna 41 can be changed.Thereby, it is possible to improve the uniformity of the plasma ion density in process SPACE V 1.About the mounting structure on the periphery of the antenna through hole 12 for antenna maintaining part 80 being arranged on the correspondence in top board 11, describe later.
< structural portion 5>
Structural portion 5 is fixed on top board 11 in the mode in opposite directions of the transport path with substrate 9.Structural portion 5 has a pair side shield 51 opposite each other and a pair shield member 55 opposite each other.A pair side shield 51 and a pair shield member 55 are grounded respectively.
A pair side shield 51 is each naturally at the component of the upper tabular extended in the direction (X-direction) of the transport path of crossing substrate 9, and the respective both ends in X-axis extend near the wall portion at the two ends in X-axis for the treatment of chamber 1.The normal direction of the interarea of a pair side shield 51 is the conveyance direction (Y-direction) of substrate 9, and a pair side shield 51 is plate bodys vertical with transport path.Flange part is formed on the respective top of a pair side shield 51.The normal direction of the interarea of each flange part is Z-direction, and each flange part is parallel plane plate body with XY.
The height on the top of a pair side shield 51 is set as, height high and mutually more roughly equal than the top (bottom of U-shaped) 44 of inductance coupling high type antenna 41 respectively.A pair side shield 51 is such as made of aluminum.
A pair shield member 55 is with across multiple inductance coupling high type antennas 41 mode being opposite each other arranged as row, erects the component of the tabular arranged from the top board 11 for the treatment of chamber 1.
A pair shield member 55 has separately: flat base 56, is installed as and can moves in the X direction along the lower surface 111 of top board 11; Flat fixed head 57, cardinal extremity is fixed on the ora terminalis of base 56, erects setting downwards from this ora terminalis; Flat movable platen 58, can move in vertical relative to fixed head 57.Base 56 is can be arranged on top board 11 along the mode of the lower surface 111 of top board 11 in the direction movement of assortment direction, i.e. the imaginary axis K of multiple inductance coupling high type antenna 41.
Top board 11 is formed multiple blind holes that the direction along orientation, i.e. the imaginary axis K of multiple inductance coupling high type antenna 41 arranges.The internal thread with screw threaded is formed at the inner peripheral surface of each blind hole.In addition, base 56 is formed with the through hole for making this bolt through.Thus, base 56, in multiple positions of the orientation along multiple inductance coupling high type antenna 41, is fixed on top board 11.
In addition, on fixed head 57, be formed with through fixed head 57 and 2 elongated holes extended in vertical.In addition, movable platen 58 is provided with across these 2 elongated holes interval each other and 2 the in-and-out bolt holes formed.The internal thread that can be screwed with the bolt of the elongated hole of through fixed head 57 is formed at the inner peripheral surface in each in-and-out bolt hole.By using this bolt, movable platen 58 is fixed on fixed head 57 in the mode that can change along the position of vertical.
Plasma ion density in the three dimensions that inductance coupling high type antenna 41 is outstanding is the highest in the central spot of the line segment making the two ends of the arc-shaped part in the inductance coupling high type antenna 41 in U-shaped connect.Plasma ion density along with from this central point to all directions in three-D space away from and decay.Among the plasma ion density distribution of expansion centered by inductance coupling high type antenna 41, when inserting shield member 55, suppress the decay of this plasma ion density.More particularly, when inserting shield member 55, plasma ion density slowly declines compared with not inserting the situation of shield member 55, sharply declines near shield member 55.At the wall of shield member 55, plasma disappearance.When the Fig. 8 stated afterwards by the descent direction inserting the plasma ion density that shield member 55 causes is example, it is paper above-below direction.
Therefore, when shield member 55 uprises apart from the height of lower surface 111, the plasma ion density in the neighbouring space of substrate 9 can be improved.In addition, even if by making shield member 55 along the assortment direction of multiple inductance coupling high type antenna 41 close to the antenna of the end of multiple inductance coupling high type antenna 41, the plasma ion density in the neighbouring space of substrate 9 also can be improved.Assortment direction along multiple inductance coupling high type antenna 41 changes the position of shield member 55, compares and changes the situation of shield member 55 apart from the height of top board 11, and the amplitude of fluctuation of plasma ion density can be made to become large.Like this, by changing in the position of shield member 55 and height, the distribution of plasma ion density can be regulated.In addition, if without the need to the distribution changing the plasma ion density caused by the inductance coupling high type antenna 41 close to a shield member 55 in a pair shield member 55, then can replace this shield member 55, and the shield member of the structure with the position that cannot change relative to top board 11 is arranged on top board 11.In addition, even if do not arranging a pair shield member 55, the difference that the plasma ion density distribution brought by two ends inductance coupling high type antenna 41 and the plasma ion density brought by other inductance coupling high type antennas 41 distribute is also in permissible range, without the need to arranging a pair shield member 55.
Like this, the lower surface 111 of a pair side shield 51, a pair shield member 55 and top board 11 is the wall surrounding process SPACE V 1.
< gas supply part 61>
A pair gas supply part 61 has separately: the supply source 611 of unstrpped gas; Multiple (being illustrated as 4) nozzle 615, supplies unstrpped gas to process SPACE V 1; Pipe arrangement 612, makes supply source 611 be connected with multiple nozzle 615; Valve 613, is arranged in the way, path of pipe arrangement 612.Multiple nozzle 615 is corresponding with each multiple inductance coupling high type antenna 41 respectively to be arranged.
Gas supply part 61 is to process SPACE V 1 base feed gas.Specifically, the such as silane (SiH as unstrpped gas is supplied from each nozzle 615
4) gas etc.The non-active gas of delivery unstrpped gas can supply from gas supply part 61 together with unstrpped gas as carrier gas.
Valve 613 preferably can adjust the valve of the flow of the gas flowed at pipe arrangement 612 automatically, specifically, preferably includes such as mass flow controller etc.
< exhaust portion 7>
Exhaust portion 7 is high-vacuum exhaust systems, specifically, such as, has vacuum pump 71, exhaust pipe arrangement 72 and vent valve 73.One end of exhaust pipe arrangement 72 is connected with vacuum pump 71, and the other end is connected with process SPACE V 1.In addition, vent valve 73 is arranged in the way, path of exhaust pipe arrangement 72.Specifically, vent valve 73 such as comprises APC (automatic pressure controller: Autopressurecontroller) etc., and can to the self-adjusting valve of flow of the gas flowed at exhaust pipe arrangement 72.In the structure shown here, when opening vent valve 73 under the state of vacuum pump 71 action, process SPACE V 1 is exhausted.
< control part 8>
Each structural elements that control part 8 and plasma processing apparatus 100 have is electrically connected (simply illustrating in FIG), controls these each components.Specifically, control part 8 is such as made up of common computer, in this computer, the ROM carrying out the CPU of various calculation process, storage program etc., the RAM of operating area becoming calculation process, the hard disk of storage program and various data files etc., the data communication section etc. had via the data communication function of LAN etc. are interconnected by bus etc.In addition, control part 8 is connected with by the input part etc. carrying out the display of various display, keyboard and mouse etc. are formed.In plasma processing apparatus 100, under the control of control part 8, to the process that substrate 9 puts rules into practice.
< antenna maintaining part 80 is to the mounting structure > of top board 11
Fig. 4 is the vertical view schematically showing the antenna maintaining part 80 of plasma processing apparatus 100 and the schematic configuration of its periphery.Fig. 5 is the B-B cutaway view of the antenna maintaining part 80 of Fig. 4.Fig. 6 is the C-C cutaway view of the antenna maintaining part 80 of Fig. 4.
Each antenna maintaining part 80 is tabular components of the such as circular plate shape of the inductance coupling high type antenna 41 that can keep correspondence etc.As mentioned above, the top board 11 for the treatment of chamber 1 is formed with multiple (being illustrated as 4) the antenna through hole 12 that can insert each inductance coupling high type antenna 41 that each antenna maintaining part 80 keeps.Each antenna through hole 12 has with the mode can closed by the antenna maintaining part 80 of the correspondence shape corresponding with antenna maintaining part 80.Say with having more, the size of antenna through hole 12 is less than the size of antenna maintaining part 80.In addition, if antenna maintaining part 80 is circular (discoideus), then the shape of preferred antenna through hole 12 is also circular.If under antenna maintaining part 80 blocks the state of antenna with through hole 12 completely, the periphery of the antenna through hole 12 in the circumference of antenna maintaining part 80 and top board 11 has the width that can interfix and overlaps, then the shape of antenna maintaining part 80 and antenna through hole 12 also can be different.Specifically, the shape of in antenna maintaining part 80 and antenna through hole 12 can be such as octagon, and another shape is such as circle.
Antenna in the circumference and top board 11 of antenna maintaining part 80 periphery of through hole 12, be respectively arranged with mounting structure 830,130, when antenna maintaining part 80 is in multiple anglec of rotation respectively along the circumference of antenna through hole 12, the circumference of antenna maintaining part 80 is detachably arranged on the periphery of antenna through hole 12 in the mode making antenna maintaining part 80 and block antenna through hole 12 by mounting structure 830,130.Make inductance coupling high type antenna 41 outstanding and under the state of closing antenna through hole 12, the circumference of antenna maintaining part 80 and the periphery of antenna through hole 12 are installed together mutually in treatment chamber 1 keeping the antenna maintaining part 80 of inductance coupling high type antenna 41.
Specifically, the mounting structure 830 arranged at the circumference of antenna maintaining part 80 be multiple (in the example in the figures, 12 for arranging every the anglec of rotation 30 °) bolt through hole 83, on the concentric circles U1 centered by the mid point C of the line segment L that the both ends 42,43 of the inductance coupling high type antenna 41 that multiple bolt is formed at through hole 83 to make antenna maintaining part 80 keep connect and on circumference.Each bolt through hole 83 is formed as can the size of inserting bolt 99.In addition, the antenna in top board 11, with on the upper surface 112 of the periphery of through hole 12, at antenna with between through hole 12 and blind hole 13, is formed with the groove portion 14 of the surrounding around antenna through hole 12.The O type circle 15 of rubber is embedded in groove portion 14.Thereby, it is possible to improve the seal of antenna maintaining part 80 to process SPACE V 1.
The mounting structure 130 arranged at the periphery of antenna through hole 12 be multiple (in the example in the figures, 6 every the anglec of rotation 60 ° is arranged) blind hole 13, the plurality of blind hole 13 be formed in this periphery with antenna maintaining part 80 forward surface in opposite directions on and have with on the concentric circles U2 of concentric circles U1 same diameter, the plurality of blind hole 13 is in this forward surface upper shed.On the inner peripheral surface of each blind hole 13, be formed with the internal thread that can screw togather with the bolt 99 of in-and-out bolt through hole 83.
In this case, the anglec of rotation of antenna maintaining part 80 can be changed by 30 °.That is, the inductance coupling high type antenna 41 that antenna maintaining part 80 can be kept towards by 12 settings.In addition, the periphery of antenna maintaining part 80 and antenna through hole 12 is fixed by 6 bolts 99.In addition, even if arrange the internal thread being used for screwing togather with bolt 99 at the inner peripheral surface of each bolt through hole 83, serviceability of the present invention is not damaged yet.
Multiple bolt through hole 83 is to be formed at equal intervals on concentric circles U1.In addition, multiple blind hole 13 is to be formed at equal intervals on concentric circles U2.As mentioned above, in the example in the figures, the number of bolt through hole 83 is 12, and the number of blind hole 13 is 6.That is, the number of bolt through hole 83 is the multiple of the number of blind hole 13.On the contrary, the number of blind hole 13 also can be the multiple of the number of bolt through hole 83.In addition, the number of bolt through hole 83 and the number of antenna through hole 12 also can be identical.
The arbitrary number that the number of bolt through hole 83 and the number of blind hole 13 are preferably selected respectively from 4,6,8,12 and 24.Thereby, it is possible to realize the raising of the seal in treatment chamber 1 and the reduction of cost for arranging bolt through hole 83, blind hole 13 simultaneously.
In addition, the bolt manufacturing cost of through hole 83 low cost of manufacture than blind hole 13, therefore, the preferred bolt number of through hole 83 number 13 more than blind hole.
Fig. 7 is the stereogram of the schematic configuration schematically showing the base plate 120 with multiple antenna maintaining part 80.When treatment chamber 1 maximizes, the weight for the treatment of chamber 1 reaches such as several tons, therefore, as shown in Figure 7, preferably uses the base plate 120 being formed with the antenna through hole 12 identical with the number of antenna maintaining part 80.Base plate 120 is a part for top board 11.Thus, multiple antenna maintaining part 80 is unloaded from treatment chamber 1 together with base plate 120, regulate each inductance coupling high type antenna 41 towards rear, make base plate 120 turn back to treatment chamber 1, thus, the angle change operation of antenna maintaining part 80 becomes easier.The mounting structure 830 being fitted through with being fixed the periphery of antenna maintaining part 80 and antenna through hole 12 of other parts in base plate 120 and top board 11,130 same mounting structures carry out.
Fig. 8 is the figure of the measurement example representing the plasma ion density distribution utilizing 1 inductance coupling high type antenna 41 to produce with contour map form.Fig. 9 represents the figure of plasma ion density distribution relative to the measurement example of the variation of pressure with curve form.Figure 10 is the figure of the measurement example representing the plasma ion density distribution utilizing 2 inductance coupling high type antennas 41 to produce with curve form.Figure 11 is the figure schematically representing the plasma ion density distribution that 1 inductance coupling high type antenna 41 that utilization does not arrange barricade around produces with contour map form.
Fig. 8 illustrates and arranges 1 inductance coupling high type antenna 41 in treatment chamber 1, and uses the result that the plasma ion density of Langmuir probe method to each grid point place of the horizontal plane setting in process SPACE V 1 measures.Plasma ion density is by ion saturation current density (μ A/cm
2) mensuration obtain.Ion saturation current density is the value being equivalent to plasma ion density.Plasma ion density be distributed in X-direction, Y-direction is respectively Gaussian Profile.In the example of fig. 8, the distribution of the plasma ion density in measurement region is shown by contour and represents.Specifically, plasma ion density (μ A/cm
2) distribution be respectively these 9 grades of 0-0.12,0.12-0.18,0.18-0.24,0.24-0.3,0.3-0.36,0.36-0.42,0.42-0.48,0.48-0.54,0.54-0.6, carry out shading display in this mode gradually uprised by concentration that puts in order.
According to the measurement result of Fig. 8, the region that the curve be formed by connecting by each point making plasma ion density identical surrounds, compare Y-direction (with the direction that the line segment making the both ends of inductance coupling high type antenna 41 be connected is vertical), more expand to X-direction (direction of the line segment making the both ends of inductance coupling high type antenna 41 connect).Namely known, from the center in region along the X direction away from compare from the center in region along the Y direction away from, the decay of plasma ion density is level and smooth.This difference results from and utilizes a pair side shield 51 in opposite directions along the Y direction to suppress plasma to the expansion of Y-direction.In this measurement example, a pair shield member 55 opposite each other is not along the X direction set.
Relative to this, when X-direction, Y-direction all do not arrange a pair shield member 55 and a pair side shield 51, as shown in figure 11, the region surrounded by the curve making each point of the plasma ion density with same intensity be formed by connecting, maximum length WY is in the Y direction greater than the maximum length in X-direction.That is, contrary with Fig. 8, this region is compared X-direction and is more expanded to Y-direction.
Like this, when the plasma ion density distribution utilizing inductance coupling high type antenna 41 to produce is not subject to affecting of the wall of the surrounding of inductance coupling type antenna 41, comprise make inductance coupling high type antenna 41 both ends 42,43 connect line segment L central point C and in the vertical plane vertical with the projected direction of inductance coupling high type antenna 41, when the bearing of trend (X-direction) from central point C along line segment L away from, the most sharp-decay of plasma ion density.On the contrary, when from central point C along the direction (Y-direction) vertical with the bearing of trend of line segment L away from, plasma ion density the most slowly decays.
Therefore, by the distribution based on the plasma ion density measured in advance, utilize such as trial-and-error method (cutandtry) adjust inductance coupling high type antenna 41 towards, thus the uniformity of plasma ion density can be improved.
In addition, Fig. 9 is the process conditions set in the same manner as Fig. 8 except cavity indoor pressure, and makes chamber inner pressure variation to measure the result of half amplitude relative to the variation of pressure of plasma density distribution.Even if when pressure change, also known, same with Fig. 8, Y-direction is compared in the region with the plasma ion density of same intensity, more expands to X-direction.
Figure 10 represents the measurement result of the plasma ion density distribution when 2 inductance coupling high type antennas 41 are lit (being supplied to High frequency power).Electric power is individually supplied and the result measured separately utilizes Bai Quan and black circle to describe to each inductance coupling high type antenna 41.Addition simple for measurement result independent for each inductance coupling high type antenna 41 obtains by the curve described with the rhombus of white.The curve described with the rhombus of black actual expression supplies electric power and the density measured to 2 inductance coupling high type antennas 41 simultaneously.
Like this, when using multiple inductance coupling high type antenna 41, reaction process in chamber is by the impact of the distance between the wall in the flow of the pressure in chamber, process gas, component, each antenna and chamber etc., therefore, the distribution of plasma ion density can not be the simple additive value of the density of each inductance coupling high type antenna 41 monomer, and the uniformity of plasma ion density is compromised sometimes.
But, in plasma processing apparatus 100, by use antenna maintaining part 80 change inductance coupling high type antenna 41 towards, can cost be suppressed and improve the uniformity of plasma ion density.
Figure 12 is the YZ end view of the schematic configuration of the plasma processing apparatus 100A of other structure example of the plasma processing apparatus schematically shown as execution mode.The difference of plasma processing apparatus 100A and plasma processing apparatus 100 is, plasma processing apparatus 100 arranges antenna maintaining part 80 respectively for 4 inductance coupling high type antennas 41, regulate each inductance coupling high type antenna 41 towards, in contrast, plasma processing apparatus 100A only arranges antenna maintaining part 80 for 2 inductance coupling high type antennas 41 at two ends.Such as, when multiple inductance coupling high type antenna 41 is arranged as row, when the plasma ion density of only inductance coupling high type antenna 41 generation at reason two ends damages the uniformity of overall plasma ion density, as shown in figure 12, only antenna maintaining part 80 can be set for the inductance coupling high type antenna 41 of the reason becoming infringement uniformity.In this case, 2 the inductance coupling high type antennas 41 being respectively arranged with the two ends of corresponding antenna maintaining part 80 are equivalent to " at least one inductance coupling high type antenna " in the present invention.
<2. the action > of plasma processing apparatus
Then, the flow process of the process performed in plasma processing apparatus 100 is described.The process below illustrated performs under the control of control part 8.
When the bearing 90 being configured with substrate 9 is moved into the inside for the treatment of chamber 1 by the carrying-in/carrying-out mouth via treatment chamber 1, conveying unit 2 is kept to keep this bearing 90.In addition, the gas in exhaust portion 7 pairs for the treatment of chamber 1 is exhausted to make treatment chamber 1 be in vacuum state.In addition, on the opportunity of regulation, keep conveying unit 2 to start the conveyance (conveyance step) of bearing 90, heating part 3 starts to heat the substrate 9 of configuration on bearing 90.
When the inside for the treatment of chamber 1 is in vacuum state, gas supply part 61 starts from nozzle 615 to process SPACE V 1 base feed gas.
In addition, while beginning supply gas, high-frequency current (specifically, the high-frequency current of such as 13.56MHz) is flow through from high frequency electric source 440 to each inductance coupling high type antenna 41.So, utilize the high-frequency induction magnetic field of the surrounding of inductance coupling high type antenna 41 to accelerate electronics, produce inductively coupled plasma.When producing plasma, the unstrpped gas in process SPACE V 1 is in plasma, and produces the free radical (Radical) of unstrpped gas and ion etc. and enlivens kind, and is being carried out chemical vapor-phase growing by the substrate 9 that transports.So, the substrate 9 interarea being formed with cvd film can as structure used for electronic device for various electronic devices such as solar cells.
In the film forming process of plasma processing apparatus 100, the conveyance process of substrate 9 and the generation process of plasma walk abreast and carry out.In addition, the supply process of unstrpped gas and the conveyance process of substrate 9 and plasma generation process is parallel carries out.
In the above-described embodiment, situation plasma processing apparatus of the present invention being applied to plasma CVD equipment is illustrated, but plasma processing apparatus of the present invention can be applicable to the various devices carrying out plasma treatment.Such as go for utilizing the ion pair target in plasma environment to carry out sputtering and carry out film forming sputter equipment on object.In addition, the plasmarized plasma-etching apparatus making it act on object to etch object of etching gas is also gone for making.
According to the plasma processing apparatus of the above present embodiment formed, antenna maintaining part 80 with can with change in the face that the projected direction of this inductance coupling high type antenna 41 intersects line segment L that the both ends 42,43 of corresponding inductance coupling high type antenna 41 are connected towards mode, keep this inductance coupling high type antenna 41 at the both ends 42,43 of this inductance coupling high type antenna 41.But, inductance coupling high type antenna 41 with regard to being less than 1 circle by the number of turn carries out with regard to the plasma ion density of plasmarized process gas, in the face of line segment L comprising both ends 42,43 connection making inductance coupling high type antenna 41, the density on the direction vertical with this line segment L is higher than the density on this line segment L direction.Therefore, by utilize antenna maintaining part 80 change inductance coupling high type antenna 41 towards, the uniformity of plasma ion density can be improved.
In addition, according to the plasma processing apparatus of the above present embodiment formed, due to can separately change make multiple inductance coupling high type antenna 41 respective both ends 42,43 connect line segment L towards, so the uniformity of plasma ion density can be improved in wide region.
In addition, according to the plasma processing apparatus of the above present embodiment formed, multiple inductance coupling high type antenna 41 is arranged in row along imaginary axis K, so can improve the uniformity of plasma ion density in the scope that width is wide, imaginary axis K extends along the top board 11 for the treatment of chamber 1.
In addition, according to the plasma processing apparatus of the above present embodiment formed, a pair shield member 55 of tabular is with across being arranged in multiple inductance coupling high type antennas 41 of row and mode opposite each other to be erect from the top board 11 for the treatment of chamber 1 and arranged.Therefore, utilize shield member 55 to improve the plasma ion density caused by the inductance coupling high type antenna 41 at two ends, the decline of this plasma ion density can be suppressed.
In addition, according to the plasma processing apparatus of the above present embodiment formed, at least one in a pair shield member 55 is set to change position on the imaginary axis K direction of the orientation of the multiple inductance coupling high type antenna 41 of regulation and apart from least one in the height of the top board 11 of chamber 1.By making shield member 55 close to inductance coupling high type antenna 41, plasma ion density can be improved.In addition, even if improve the height of shield member 55, also plasma ion density can be improved.Therefore, it is possible to adjust the plasma ion density caused by the inductance coupling high type antenna 41 at two ends more subtly, suppress the decline of plasma ion density further.
In addition, according to the plasma processing apparatus of the above present embodiment formed, the top board 11 for the treatment of chamber 1 is provided with antenna through hole 12, and antenna through hole 12 has the shape corresponding with the antenna maintaining part 80 as tabular component, and is closed by this antenna maintaining part 80.And, antenna in the circumference and this top board 11 of antenna maintaining part 80 periphery of through hole 12, be respectively arranged with mounting structure 830,130, when antenna maintaining part 80 is in multiple anglec of rotation respectively along the circumference of antenna through hole 12, the circumference of antenna maintaining part 80 is detachably arranged on the periphery of antenna through hole 12 by mounting structure 830,130 in the mode making antenna maintaining part 80 block antenna through hole 12.Therefore, by changing the anglec of rotation of antenna maintaining part 80, can easily change the inductance coupling high type antenna 41 kept by antenna maintaining part 80 towards (the line segment L making both ends 42,43 connect towards).
In addition, according to the plasma processing apparatus of the above present embodiment formed, by making the bolt 99 of in-and-out bolt through hole 83 and the internal screw-thread screw formed at the inner peripheral surface of blind hole 13, the periphery of the circumference of antenna maintaining part 80 and antenna through hole 12 can be firmly fixed, improve the seal in treatment chamber 1.
In addition, according to the plasma processing apparatus of the above present embodiment formed, the number of the side in multiple bolt through hole 83 and multiple blind hole 13 is the multiple of the number of the opposing party.Therefore, the number of the anglec of rotation of the antenna maintaining part 80 that a side the part in multiple bolt through hole 83 and multiple blind hole 13 can be made to aim at the whole of the opposing party, more than the number of the few side in the number of bolt through hole 83 and the number of blind hole 13.Thus, even if cut down the bolt number of the side in through hole 83 and blind hole 13, also inductance coupling high type antenna 41 (making the line segment L that the both ends 42,43 of inductance coupling high type antenna 41 connect) can be set as multiple towards.
In addition, according to the plasma processing apparatus of the above present embodiment formed, the number of multiple bolt through hole 83 and the number of multiple blind hole 13 are the arbitrary number selected from 4,6,8,12 and 24 respectively.If make the number of bolt through hole 83 and blind hole 13 increase, more bolts 99 are then used antenna maintaining part 80 more firmly to be fixed on the periphery of antenna through hole 12, therefore the seal in treatment chamber 1 is improved, and on the other hand, the manufacturing cost of bolt through hole 83 and blind hole 13 is increased.Therefore, if determine bolt through hole 83 and the respective number of blind hole 13 as the present invention, then realize the raising of the airtight performance in treatment chamber 1 and the decline of cost simultaneously.
In addition, according to the plasma processing apparatus of the above present embodiment formed, due to the bolt number of through hole 83 number more than blind hole 13 of low cost of manufacture compared with blind hole 13, therefore, it is possible to reduce the manufacturing cost of plasma processing apparatus.
< variation >
Be shown specifically invention has been and describe, but above-mentioned being described in whole modes be only illustrate and non-limiting.Therefore, the present invention, in its scope of invention, can carry out suitable distortion and omission to execution mode.
Claims (10)
1. a plasma processing apparatus, is characterized in that,
Have:
Chamber,
Object maintaining part, keeps the object becoming handling object in described chamber,
At least one inductance coupling high type antenna, the number of turn is less than a circle,
High frequency electric source, at least one inductance coupling high type antenna supply high frequency electric power described,
At least one antenna maintaining part, to make at least one inductance coupling high type antenna described from the mode outstanding in described chamber of a wall portion of described chamber, at least one inductance coupling high type antenna described in keeping respectively relative to a described wall portion;
Each antenna maintaining part of at least one antenna maintaining part described, respectively in the mode changed in the face intersected at the projected direction with this inductance coupling high type antenna of the line segment that the both ends of the inductance coupling high type antenna of the correspondence made at least one inductance coupling high type antenna described can be connected, keep the inductance coupling high type antenna of described correspondence at the both ends of the inductance coupling high type antenna of described correspondence.
2. plasma processing apparatus as claimed in claim 1, is characterized in that,
At least one inductance coupling high type antenna described is multiple inductance coupling high type antennas, and at least one antenna maintaining part described is multiple antenna maintaining parts,
Described multiple antenna maintaining part with can independently change respectively line segment that the respective both ends of described multiple inductance coupling high type antenna are connected towards mode keep described multiple inductance coupling high type antenna.
3. plasma processing apparatus as claimed in claim 2, is characterized in that,
Described multiple antenna maintaining part keeps described multiple inductance coupling high type antenna in the mode making described multiple inductance coupling high type antenna and be arranged in row along predetermined imaginary axis, and described imaginary axis is the imaginary axis extended along a described wall portion.
4. plasma processing apparatus as claimed in claim 3, is characterized in that,
This plasma processing apparatus also has a pair shield member of tabular, and described a pair shield member, with across the described multiple inductance coupling high type antennas mode being opposite each other arranged in row, is erect from a described wall portion of described chamber and arranged.
5. plasma processing apparatus as claimed in claim 4, is characterized in that,
At least one shield member in described a pair shield member is set to, and can change position on described imaginary axis and apart from least one in the height of a described wall portion of described chamber.
6. the plasma processing apparatus according to any one of claim 1 to 5, is characterized in that,
Described at least one day wire retaining portions is not the tabular component of the inductance coupling high type antenna of the correspondence that can keep at least one inductance coupling high type antenna described,
When utilizing inductance coupling high type antenna mutually corresponding at least one inductance coupling high type antenna described and at least one antenna maintaining part described and antenna maintaining part to define respective antenna and corresponding maintaining part,
A described wall portion of described chamber is provided with antenna through hole, this antenna through hole can insert the described respective antenna kept by described corresponding maintaining part, and have with the mode can closed by the described corresponding maintaining part shape corresponding with described corresponding maintaining part
The periphery of the described antenna through hole in the circumference and a described wall portion of described corresponding maintaining part is respectively arranged with the first and second mounting structure, when described corresponding maintaining part is in multiple anglec of rotation respectively along the circumference of described antenna through hole, the circumference of described corresponding maintaining part is detachably arranged on the periphery of described antenna through hole in the mode making described corresponding maintaining part and block described antenna through hole by the described first and second mounting structure
Make described respective antenna outstanding and under the state of closing described antenna through hole, utilize the described first and second mounting structure to be arranged on described periphery by described circumference in described chamber keeping the described corresponding maintaining part of described respective antenna.
7. plasma processing apparatus as claimed in claim 6, is characterized in that,
Described first mounting structure arranged at the described circumference of described corresponding maintaining part is multiple bolt through holes, and described multiple bolt through hole to be formed on the first concentric circles on described circumference and can inserting bolt,
Described second mounting structure arranged at the described periphery of described antenna through hole is multiple blind holes, described multiple blind hole be formed in described periphery with described antenna maintaining part forward surface in opposite directions on and have on the second concentric circles of described first concentric circles same diameter, described multiple blind hole at described forward surface opening, and be formed on inner peripheral surface can with the internal thread of the described screw threaded of through described bolt through hole.
8. plasma processing apparatus as claimed in claim 7, is characterized in that,
Described multiple bolt through hole is to be formed at equal intervals on described first concentric circles, and described multiple blind hole is to be formed on described second concentric circles at equal intervals,
The number of the side in described multiple bolt through hole and described multiple blind hole is the multiple of the number of the opposing party.
9. plasma processing apparatus as claimed in claim 8, is characterized in that,
The number of described multiple bolt through hole and the number of described multiple blind hole are the arbitrary number selected from 4,6,8,12 and 24 respectively.
10. plasma processing apparatus as claimed in claim 7, is characterized in that,
The number of described multiple bolt through hole is more than the number of described multiple blind hole.
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| JP2014199708A JP6373707B2 (en) | 2014-09-30 | 2014-09-30 | Plasma processing equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113889391A (en) * | 2020-07-02 | 2022-01-04 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and insulating window assembly thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6999368B2 (en) * | 2017-11-01 | 2022-01-18 | 東京エレクトロン株式会社 | Plasma processing equipment |
| TWI786417B (en) * | 2020-07-14 | 2022-12-11 | 大氣電漿股份有限公司 | Atmospheric pressure plasma generator |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004039719A (en) * | 2002-07-01 | 2004-02-05 | Japan Science & Technology Corp | Plasma system, plasma control method, and plasma processed substrate |
| US20060057854A1 (en) * | 2003-01-16 | 2006-03-16 | Yuichi Setsuhara | High frequency power supply device and plasma generator |
| CN101855947A (en) * | 2007-11-14 | 2010-10-06 | Emd株式会社 | Plasma treatment device |
| WO2011043297A1 (en) * | 2009-10-05 | 2011-04-14 | 株式会社島津製作所 | Surface-wave plasma cvd device and film-forming method |
| JP2012049176A (en) * | 2010-08-24 | 2012-03-08 | Nissin Electric Co Ltd | Plasma device |
| CN105018899A (en) * | 2013-10-07 | 2015-11-04 | 斯克林集团公司 | Plasma CVD apparatus |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001037314A1 (en) * | 1999-11-15 | 2001-05-25 | Lam Research Corporation | Materials and gas chemistries for processing systems |
| KR101121418B1 (en) * | 2005-02-17 | 2012-03-16 | 주성엔지니어링(주) | Plasma generation apparatus comprising toroidal core |
| JP2007123008A (en) * | 2005-10-27 | 2007-05-17 | Nissin Electric Co Ltd | Plasma generation method and its device, and plasma processing device |
| JP5162108B2 (en) * | 2005-10-28 | 2013-03-13 | 日新電機株式会社 | Plasma generating method and apparatus, and plasma processing apparatus |
| JP2007220594A (en) * | 2006-02-20 | 2007-08-30 | Nissin Electric Co Ltd | Plasma generation method and plasma generation device as well as plasma treatment device |
| WO2011061787A1 (en) * | 2009-11-17 | 2011-05-26 | 日新電機株式会社 | Plasma device |
| JP5377749B2 (en) * | 2010-02-25 | 2013-12-25 | シャープ株式会社 | Plasma generator |
| JP5735232B2 (en) * | 2010-08-02 | 2015-06-17 | 株式会社イー・エム・ディー | Plasma processing equipment |
| US20130220548A1 (en) * | 2010-09-10 | 2013-08-29 | Emd Corporation | Plasma processing device |
| KR101542905B1 (en) * | 2013-04-26 | 2015-08-07 | (주)얼라이드 테크 파인더즈 | Semiconductor device |
| US9653253B2 (en) * | 2014-03-07 | 2017-05-16 | Advanced Ion Beam Technology, Inc. | Plasma-based material modification using a plasma source with magnetic confinement |
-
2014
- 2014-09-30 JP JP2014199708A patent/JP6373707B2/en not_active Expired - Fee Related
-
2015
- 2015-09-09 TW TW104129813A patent/TWI581354B/en not_active IP Right Cessation
- 2015-09-24 KR KR1020150135449A patent/KR101699177B1/en active IP Right Grant
- 2015-09-29 CN CN201510632845.7A patent/CN105472857B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004039719A (en) * | 2002-07-01 | 2004-02-05 | Japan Science & Technology Corp | Plasma system, plasma control method, and plasma processed substrate |
| US20060057854A1 (en) * | 2003-01-16 | 2006-03-16 | Yuichi Setsuhara | High frequency power supply device and plasma generator |
| CN101855947A (en) * | 2007-11-14 | 2010-10-06 | Emd株式会社 | Plasma treatment device |
| WO2011043297A1 (en) * | 2009-10-05 | 2011-04-14 | 株式会社島津製作所 | Surface-wave plasma cvd device and film-forming method |
| JP2012049176A (en) * | 2010-08-24 | 2012-03-08 | Nissin Electric Co Ltd | Plasma device |
| CN105018899A (en) * | 2013-10-07 | 2015-11-04 | 斯克林集团公司 | Plasma CVD apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113889391A (en) * | 2020-07-02 | 2022-01-04 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and insulating window assembly thereof |
| CN113889391B (en) * | 2020-07-02 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and insulating window assembly thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6373707B2 (en) | 2018-08-15 |
| TW201614759A (en) | 2016-04-16 |
| JP2016072065A (en) | 2016-05-09 |
| KR20160038787A (en) | 2016-04-07 |
| KR101699177B1 (en) | 2017-01-23 |
| CN105472857B (en) | 2018-04-10 |
| TWI581354B (en) | 2017-05-01 |
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