CN104752140B - A kind of reaction chamber and plasma processing device - Google Patents
A kind of reaction chamber and plasma processing device Download PDFInfo
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- CN104752140B CN104752140B CN201310750632.5A CN201310750632A CN104752140B CN 104752140 B CN104752140 B CN 104752140B CN 201310750632 A CN201310750632 A CN 201310750632A CN 104752140 B CN104752140 B CN 104752140B
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- reaction chamber
- medium window
- planar coil
- plasma
- side wall
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Abstract
The present invention relates to a kind of reaction chamber and plasma processing device, it includes power supply, medium window, connecting side wall and planar coil；Medium window is horizontally placed on the top of reaction chamber, and it is made from a material that be electrically non-conductive；The quantity of medium window is one or more, and is not in the first medium window in same level with the roof of reaction chamber including at least one；First medium window is fixedly connected by connecting side wall with the roof of reaction chamber, and it is multiple regions that first medium window and connecting side wall are engaged reaction chamber inside division；Planar coil is arranged at the top of medium window, and and power electric connection, for when being connected with power supply, producing electromagnetic field, it is plasma that the process gas in region corresponding in reaction chamber is excited.Above-mentioned reaction chamber, can control the density of distribution and reaction chamber chamber piasma of the plasma in reaction chamber；And raising inductively produces the in hgher efficiency of plasma.
Description
Technical field
The present invention relates to semiconductor equipment manufacture field, in particular it relates to a kind of reaction chamber and plasma process set
It is standby.
Background technology
Plasma processing device is main to be carved by the plasma produced in reaction chamber to workpiece to be machined
The techniques such as erosion, deposition；Specifically, it typically produces plasma by following manner in reaction chamber：To located at reaction chamber
Radio-frequency power is loaded in induction coil on room, makes it that electromagnetic field is produced in reaction chamber, so as to by the work in reaction chamber
Skill gas is coupled as plasma.
Fig. 1 is the structural representation of existing the first reaction chamber.Fig. 1 is referred to, the roof top of reaction chamber 1 sets
There is induction coil 2, induction coil 2 is the planar coil for planar being wound according to certain way, and it is connected with radio-frequency power supply 3.
In technical process, radio-frequency power supply 3 loads radio-frequency power to induction coil 2, and induction coil 2 can be made to be produced in reaction chamber 1
Raw electromagnetic field, plasma is coupled as by the process gas in reaction chamber 1.
In above-mentioned reaction chamber 1, because the electromagnetic field that induction coil 2 is produced is not Uniform Electromagnetic Field, this is caused etc. from
Skewness of the daughter in reaction chamber 1；Also, got in the density closer to the region of induction coil 2, plasma
Height, its distribution is correspondingly more uneven.In actual applications, typically by increasing the distance of workpiece to be machined and induction coil 2
To make distribution of the plasma on workpiece to be machined surface more uniform, but can so cause workpiece to be machined surface region etc.
The density of gas ions is relatively low, so as to reduce the speed of etching or depositing operation, and then reduces the production of plasma processing device
Efficiency.
Fig. 2 is the structural representation of existing second reaction chamber.Fig. 2 is referred to, the roof of reaction chamber 4 is provided with
One cylinder shape medium window 5 and multiple annular medium windows 6 concentric with medium window 5；Wherein, the side-wall outer side ring of medium window 5
Coil 7 is wound with, the side-wall outer side of each medium window 6 is surrounded with coil 8；Coil 7 and coil 8 are connected with radio-frequency power supply 9.In work
During skill, radio-frequency power supply 9 can make it that electromagnetic field is produced in reaction chamber 4 to coil 7 and the loading radio-frequency power of coil 8,
Process gas in reaction chamber 4 is coupled as plasma；Also, by the radio frequency being loaded onto on coil 7 and coil 8
Power, can workpiece to be machined apart from medium window 5 and medium window 6 farther out in the case of, make the grade on workpiece to be machined surface from
Daughter has density and good distributing homogeneity higher.
But in actual applications, above-mentioned reaction chamber 4 is inevitably present following problems, i.e.,：By increasing loading
Radio-frequency power on to coil 7 and coil 8 makes the plasma on workpiece to be machined surface have the technical process of density higher
In, more energy can be consumed, and make the coupling efficiency of coil 7 and coil 8 relatively low；Meanwhile, it is loaded onto coil 7 and coil
Radio-frequency power on 8, also makes the density of the plasma of the inside sidewalls of medium window 5 and medium window 6 accordingly increase, and thus increases
Big capacitive bombardment of the plasma to medium window 5 and the inwall of medium window 6, so as to the side of medium window 5 and medium window 6 can be caused
Therefore wall is subject to larger loss；Also, the side wall of medium window 5 and medium window 6 is also resulted in because the capacitive of plasma is bombarded
And the amplitude increase for heating up, which increases the thermograde between medium window 5 and the side Bi Shangge regions of medium window 6, so that
Cause in tolerance range of the said temperature gradient beyond medium window 5 and medium window 6, therefore medium window 5 and medium window 6 can break
Split.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that a kind of reaction chamber and wait
Plasma processing apparatus, it is controlled by independently producing plasma in one or more regions inside reaction chamber
And adjust the distributing homogeneity of the density and plasma of plasma in reaction chamber in reaction chamber.
A kind of reaction chamber is provided to realize the purpose of the present invention, for carrying out PROCESS FOR TREATMENT, institute to workpiece to be machined
Stating reaction chamber includes power supply, medium window, connecting side wall and planar coil；The medium window is horizontally placed on the reaction chamber
Top, it is made from a material that be electrically non-conductive；The quantity of the medium window be one or more, and including at least one not with
The roof of the reaction chamber is in the first medium window in same level；The first medium window is by the connecting side wall
Roof with the reaction chamber is fixedly connected, and the first medium window and the connecting side wall are engaged the reaction chamber
Indoor section is segmented into multiple regions；The planar coil is arranged at the top of medium window, and with the power electric connection, for
When being connected with power supply, electromagnetic field is produced, the process gas in region corresponding in reaction chamber is coupled as plasma.
Wherein, the connecting side wall is made up of conductive material or non-conducting material.
Wherein, the quantity of the first medium window is one, its roof for being vertically lower than the reaction chamber,
And it is located at the vertical top of the workpiece to be machined in the reaction chamber.
Wherein, the diameter with diameter greater than the workpiece to be machined of the medium window.
Wherein, the roof of the reaction chamber is made up of one or more medium windows.
Wherein, above the first medium window planar coil and Jie of the roof positioned at the anabolic reaction chamber
The difference in height of the planar coil in the vertical direction above matter window is more than 50mm.
Wherein, the distance between the planar coil and outer wall of the medium window and the reaction chamber are more than 25mm.
Wherein, the quantity of the medium window is multiple；The quantity of the planar coil is multiple, and it is respectively arranged on different
Medium window top；Described each planar coil is connected correspondingly with a power supply, and many with what multiple planar coils were connected
Phase synchronization between individual power supply；Or the multiple planar coil be connected in parallel to each other or connect after be connected with a power supply, and institute
The sense of current stated in multiple planar coils is consistent.
Wherein, the reaction chamber includes gas supply system, and the gas supply system includes multiple passages, described
Multiple passages are connected with the different zones in the reaction chamber respectively, for leading to the different zones in the reaction chamber
Enter the process gas of respective quality flow.
Wherein, the reaction chamber also includes that gas mass flow controls meter or pneumatic operated valve, the gas mass flow control
System meter or pneumatic operated valve are used for the quality stream for controlling to be passed through the process gas of different zones in the reaction chamber through multiple passages
Amount.
Used as another technical scheme, the present invention also provides a kind of plasma processing device, including reaction chamber, described
The above-mentioned reaction chamber that reaction chamber is provided using the present invention.
The invention has the advantages that：
The present invention provide reaction chamber, its first medium window be engaged with connecting side wall will be divided into reaction chamber it is many
Individual region, and by coupled plasma in the planar coil one of which above medium window or multiple region, from
And can be by controlling distribution and reaction of the efficiency plasma of plasma generation in above-mentioned zone in reaction chamber
The density of chamber chamber piasma is controlled and adjusts, and then plasma can be made to divide in the respective regions of reaction chamber
Cloth is uniform, and with corresponding density；Additionally, the present invention provide reaction chamber use planar coil, compared to existing technology in
The solenoid type coil of use, its inductively in hgher efficiency, and can reduce plasma to the capacitive of medium window Hong
Hit, prevent medium window from therefore damaging, such that it is able to extend the service life of medium window.
The plasma processing device that the present invention is provided, it uses the above-mentioned reaction chamber of present invention offer, can control
Distribution of the density and plasma of reaction chamber chamber piasma in reaction chamber, and make plasma in reaction chamber
It is evenly distributed in respective regions, and with corresponding density；The efficiency for inductively producing plasma can also be improved, and can
The capacitive of medium window is bombarded with reducing plasma, prevents medium window from therefore damaging, such that it is able to extend making for medium window
Use the life-span.
Brief description of the drawings
Fig. 1 is the structural representation of existing the first reaction chamber；
Fig. 2 is the structural representation of existing second reaction chamber；
The structural representation of the reaction chamber that Fig. 3 is provided for first embodiment of the invention；
Fig. 4 is the schematic top plan view of reaction chamber shown in Fig. 3；
Fig. 5 is the schematic diagram that planar coil is connected with power supply；
The schematic diagram that Fig. 6 is made from a material that be electrically non-conductive for connecting side wall in reaction chamber shown in Fig. 3；
Fig. 7 is the schematic diagram that two planar coils are connected in parallel to each other；
Fig. 8 is the schematic diagram that two planar coils are one another in series；
Fig. 9 is that the quantity of medium window in reaction chamber is the schematic diagram of；
The structural representation of the reaction chamber that Figure 10 is provided for second embodiment of the invention；And
The schematic diagram that Figure 11 is made from a material that be electrically non-conductive for connecting side wall in reaction chamber shown in Figure 10.
Specific embodiment
To make those skilled in the art more fully understand technical scheme, come below in conjunction with the accompanying drawings to the present invention
The reaction chamber and plasma processing device of offer are described in detail.
The structural representation of the reaction chamber that Fig. 3 is provided for first embodiment of the invention.Fig. 4 is reaction chamber shown in Fig. 3
Schematic top plan view.Also referring to Fig. 3 and Fig. 4, reaction chamber 10 is used to carry out PROCESS FOR TREATMENT to workpiece to be machined 11, its bag
Include power supply 12, medium window 13, planar coil 14, connecting side wall 15 and gas supply system 16.Wherein, medium window 13 is horizontally disposed with
In the top of reaction chamber 10, it is made from a material that be electrically non-conductive；The quantity of medium window 13 is one or more, and including extremely
Few one is not in the first medium window 131 in same level with the roof of reaction chamber 10；First medium window 131 is by connecting
Side wall 15 is connect to be connected with the roof of reaction chamber 10, and first medium window 131 is engaged reaction chamber 10 with connecting side wall 15
Inside division is multiple regions.Specifically, in the present embodiment, connecting side wall 15 is made of an electrically conducting material；The number of medium window 13
It is two to measure, and one of them is first medium window 131；The first medium window 131 is vertically lower than reaction chamber 10
Roof, it is located at the vertical top of workpiece to be machined 11 in reaction chamber 10, and has a diameter larger than the diameter of workpiece to be machined 11,
It can be in first medium window by the inside division of reaction chamber 10 to be engaged with connecting side wall 15 so as to the first medium window 131
Two regions such as the annular region B of region A and circle zone A of 131 lower sections, and workpiece to be machined 11 is completely in region A
It is interior.
In the present embodiment, the roof of reaction chamber 10 is another in addition to first medium window 131 in two medium windows 13
Individual medium window 132.Specifically, medium window 132 is annular, its circular first medium window 131；And the external diameter of medium window 132 and interior
Difference between footpath is more than 40mm.
Gas supply system 16 includes multiple passages, and multiple passages connect with the different zones in reaction chamber 10 respectively
It is logical, the process gas for being passed through respective quality flow to the different zones in reaction chamber 10.Specifically, in the present embodiment
In, multiple passages include the passage 161 connected with region A and the passage 162 connected with annular region B；Wherein, ventilate
The quantity in hole 161 and 162 can be one or more.
Planar coil 14 is arranged at the top of medium window 13, and is electrically connected with power supply 12, for when being connected with power supply 12,
Electromagnetic field is produced in the reaction chamber 10 through medium window 13, and then by the technique in region corresponding in reaction chamber 10
Gas is coupled as plasma.Specifically, in the present embodiment, planar coil 14 is included located at the top of first medium window 131
Planar coil 141 and the planar coil 142 located at the top of medium window 132.Also, as shown in figure 5, planar coil 141 by
Orchestration 121 is connected with a power supply 12, and planar coil 142 is connected by adaptation 122 with another power supply 12；Also, with it is flat
Connected by Phase synchronization controlling cable 120 between planar coil 141 and two power supplys 12 of the connection of planar coil 142, make two
Phase synchronization between power supply 12, to avoid planar coil 141 and planar coil 142 from producing interference each other.
In the present embodiment, produce the process of plasma as follows in reaction chamber 10：Gas supply system 16 is by logical
Stomata 161 and 162 in the region A and annular region B in reaction chamber 10 to being passed through process gas；Planar coil 141 and 142 points
It is not connected with power supply 12, and electromagnetic field is produced in reaction chamber 10；Wherein, the electromagnetic field that planar coil 141 is produced is by region A
Interior process gas is coupled as plasma, and the electromagnetic field that planar coil 142 is produced couples the process gas in annular region B
It is plasma；So as to produce plasma in reaction chamber 10.
In above process, due to planar coil 141 in the A of region coupled plasma and planar coil 142 in annular
The process of coupled plasma is independent of each other in the B of region, therefore in actual applications, can be by control plane line respectively
Circle 141 makes region A and annular region in the A of region with the speed of the coupled plasma in annular region B of planar coil 142
Plasma in B has corresponding density, such that it is able to control and adjusts distribution of the plasma in reaction chamber 10；Enter
And can through the above way make the plasma in reaction chamber 10 there is preferable uniformity and density higher, make anti-
Answer chamber 10 has uniformity higher to techniques such as etching, the depositions of workpiece to be machined, while also having production higher to imitate
Rate.
In the present embodiment, plasma is produced by the coupling technique gas of planar coil 14, compared to existing technology in make
It is plasma with solenoid type coil coupling technique gas, its inductively in hgher efficiency；And plasma can be reduced
Body is bombarded the capacitive of medium window 13, so as to reduce loss that medium window 13 is subject to and medium window 13 rises because of plasma bombardment
The amplitude of temperature, prevents medium window 13 from therefore damaging, and then can extend the service life of medium window 13.
In sum, the reaction chamber that the present embodiment is provided, its first medium window 131 is engaged with connecting side wall 15 will be anti-
Answer and multiple regions are divided into chamber 10, and by the one of which of planar coil 14 or multiple located at the top of medium window 13
Coupled plasma in region, such that it is able to pass through to control the efficiency plasma of plasma generation in above-mentioned zone anti-
Answer the density of plasma in the distribution in chamber 10 and reaction chamber 10 to be controlled and adjust, and then plasma can be made
It is evenly distributed in the respective regions of reaction chamber 10, and with corresponding density；Additionally, the reaction chamber that the present embodiment is provided
Using planar coil, the solenoid type coil of middle use compared to existing technology, its inductively in hgher efficiency, and can subtract
Capacitive bombardment of few plasma to medium window 13, prevents medium window 13 from therefore damaging, such that it is able to extend medium window 13
Service life.
In the present embodiment, reaction chamber 10 also includes that gas mass flow controls meter or pneumatic operated valve, and it is used to control warp
Passage 161 and 162 is passed through the mass flow of the process gas of different zones in reaction chamber 10；In actual applications, pass through
Control is passed through the mass flow of the process gas of different zones in reaction chamber 10, can be with control plane coil 14 in reaction chamber
The efficiency of coupled plasma in 10 different zones, so as to control the density and plasma of the plasma in reaction chamber 10
Distribution in reaction chamber 10.
In the present embodiment, the distance between planar coil 14 and outer wall of medium window 13 and reaction chamber 10 are more than
25mm；Positioned at the planar coil 141 of the top of first medium window 131 and between the planar coil 142 of the top of medium window 132
Difference in height is more than 50mm.
It should be noted that in the present embodiment, connecting side wall 15 is made of an electrically conducting material, but the present invention is not limited to
This, in actual applications, as shown in fig. 6, connecting side wall 15 can also be made from a material that be electrically non-conductive；In the case, connecting side
In addition to connection first medium window 131 and medium window 132, its vertical medium window for also corresponding to planar coil 141 makes plane to wall 15
Process gas in annular region B can be coupled as plasma by coil 141 through connecting side wall 15, such that it is able to increase it
Coupling efficiency, and improve the density of the plasma of respective regions in reaction chamber 10.
Also, it should be noted that in the present embodiment, planar coil 141 and 142 is electrically connected with a power supply 12 respectively, with
Planar coil 141 is identical with the phase of two power supplys 12 of 142 connections, but the present invention is not limited thereto, in actual use, such as
Shown in Fig. 7 and Fig. 8, planar coil 141 and 142 is connected after can also being connected in parallel to each other or connecting with a power supply 12, and makes plane
Coil 141 is consistent with the sense of current in 142, to avoid planar coil 141 and 142 from producing interference each other.
Additionally, in the present embodiment, the quantity of medium window 13 is two, but the present invention is not limited thereto, in practical application
In, the quantity of medium window 13 can also be one；Specifically, as shown in figure 9, the medium window 13 is vertically lower than reaction
The roof of chamber 10, and it is located at the vertical top of the workpiece to be machined 11 in reaction chamber 10；Also, the medium window 13 is straight
Diameter of the footpath more than workpiece to be machined 11；In the case, the medium window 13 is engaged same by reaction chamber with connecting side wall 15
The inside division of room 10 is two regions such as region A and annular region B；In actual use, located at the flat of the top of medium window 13
Process gas in the A of region is inductively plasma by planar coil 14, and it is close to the area of medium window 13 above the A of region
The coupling efficiency in domain is higher, and the coupling efficiency away from the region of medium window 13 below the A of region is relatively low；Meanwhile, above the A of region
Plasma can spread to annular region B tops, such that it is able to make process gas in region A corresponding with workpiece to be machined 11
With preferable distributing homogeneity.
The structural representation of the reaction chamber that Figure 10 is provided for second embodiment of the invention.Refer to Figure 10, the present embodiment
The reaction chamber 10 of offer includes power supply 12, medium window 13, planar coil 14, connection compared with above-mentioned first embodiment, equally
Side wall 15 and gas supply system 16, because above-mentioned power supply 12, medium window 13, planar coil 14, connecting side wall 15 and gas are supplied
26S Proteasome Structure and Function to system 16 there has been detailed description in the above-described first embodiment, will not be repeated here.
The reaction chamber for only being provided with regard to the present embodiment below is described in detail with the difference of above-mentioned first embodiment.
In the present embodiment, the quantity of first medium window 131 is one, and the roof of reaction chamber 10 is made up of multiple medium windows 132；Tool
Body ground, the top of first medium window 131 is set by planar coil 141, on each medium window 132 of the roof of anabolic reaction chamber 10
Side sets planar coil 142；First medium window 131 passes through the connecting side wall 151 and 152 and reaction chamber being made of an electrically conducting material
10 roof, i.e., multiple medium windows 132 are fixedly connected；And first medium window 131 and connecting side wall 151 and 152 are by reaction chamber
Region A, annular region B and annular region C are divided into 10.
In the present embodiment, planar coil 141 and the planar coil 142 and power supply 12 located at the top of multiple medium windows 132
Connection, can be coupled as plasma by process gas respectively in annular region B and region A, annular region C；And pass through control
The effect of planar coil processed 141 and multiple coupled plasmas in annular region B and region A, annular region C of planar coil 142
Rate can control distribution and above-mentioned multiple region of the plasma in different zones such as region A, annular region B and annular region C
The density of interior plasma, such that it is able to neatly control and adjust distributing homogeneity of the plasma in reaction chamber 10 and
Density.
It should be noted that in the present embodiment, connecting side wall 151 and 152 is made of an electrically conducting material, but the present invention is not
It is limited to this, in actual applications, as shown in figure 11, connecting side wall 151 and 152 can also be made from a material that be electrically non-conductive, in this feelings
Under condition, connecting side wall 151 and 152 also corresponds to the perpendicular of planar coil 141 in addition to connection first medium window 131 and medium window 132
Straight medium window, allows planar coil 141 through connecting side wall 151 and 152, by process gas in region A and annular region C
Plasma is coupled as, which adds the coupling efficiency of planar coil 141, while region A and annulus can also be improved
The density of the plasma in the C of domain.
Used as another technical scheme, the embodiment of the present invention also provides a kind of plasma processing device, and it includes reaction
Chamber, the reaction chamber that the reaction chamber is provided using the above embodiment of the present invention.
Plasma processing device provided in an embodiment of the present invention, it uses the reaction chamber that the above embodiment of the present invention is provided
Room, can control the distribution of the density and plasma of reaction chamber chamber piasma in reaction chamber, and make plasma
It is evenly distributed in the respective regions of reaction chamber, and with corresponding density；Can also improve and inductively produce plasma
The efficiency of body, it is possible to reduce capacitive bombardment of the plasma to medium window, prevent medium window from therefore damaging, such that it is able to prolong
The service life of medium window long.
It is understood that the embodiment of above principle being intended to be merely illustrative of the present and the exemplary implementation for using
Mode, but the invention is not limited in this.For those skilled in the art, essence of the invention is not being departed from
In the case of god and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (8)
1. a kind of reaction chamber, for carrying out PROCESS FOR TREATMENT to workpiece to be machined, it is characterised in that the reaction chamber includes electricity
Source, medium window, connecting side wall and planar coil；
The medium window is horizontally placed on the top of the reaction chamber, and it is made from a material that be electrically non-conductive；The number of the medium window
It is multiple to measure, and including a first medium window for the roof for being vertically lower than the reaction chamber, described
The diameter with diameter greater than the workpiece to be machined of one medium window, and the first medium window is located at the quilt in the reaction chamber
Process the vertical top of workpiece；The first medium window is fixed with the roof of the reaction chamber by the connecting side wall and connected
Connect, and it is multiple regions that the first medium window and the connecting side wall are engaged the reaction chamber inside division；
The planar coil is arranged at the top of medium window, and with the power electric connection, for when being connected with power supply, producing
Electromagnetic field, plasma is coupled as by the process gas in region corresponding in reaction chamber.
2. reaction chamber according to claim 1, it is characterised in that the connecting side wall is by conductive material or non-conductive material
Material is made.
3. reaction chamber according to claim 1, it is characterised in that the planar coil above the first medium window
Difference in height with the planar coil in the vertical direction above the medium window of the roof of anabolic reaction chamber is more than 50mm.
4. reaction chamber according to claim 1, it is characterised in that the planar coil and the medium window and described anti-
The distance between outer wall of chamber is answered to be more than 25mm.
5. reaction chamber according to claim 1, it is characterised in that the quantity of the medium window is multiple；The plane
The quantity of coil is multiple, and it is respectively arranged on different medium window tops；
Described each planar coil is connected correspondingly with a power supply, and the multiple power supplys being connected with multiple planar coils it
Between Phase synchronization；Or
The multiple planar coil is connected after being connected in parallel to each other or connecting with a power supply, and the electric current in the multiple planar coil
Direction is consistent.
6. reaction chamber according to claim 1, it is characterised in that the reaction chamber includes gas supply system, institute
Stating gas supply system includes multiple passages, and the multiple passage connects with the different zones in the reaction chamber respectively
It is logical, the process gas for being passed through respective quality flow to the different zones in the reaction chamber.
7. reaction chamber according to claim 6, it is characterised in that the reaction chamber also includes gas mass flow control
System meter or pneumatic operated valve, the gas mass flow control meter or pneumatic operated valve are used to control to be passed through the reaction chamber through multiple passages
The mass flow of the process gas of indoor different zones.
8. a kind of plasma processing device, including reaction chamber, it is characterised in that the reaction chamber uses claim 1-
Reaction chamber described in 7 any one.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1183853A (en) * | 1994-12-06 | 1998-06-03 | 拉姆研究有限公司 | Plasma processor for large workpieces |
| US6179955B1 (en) * | 1998-08-03 | 2001-01-30 | Samsung Electronics Co., Ltd. | Dry etching apparatus for manufacturing semiconductor devices |
| CN101720500A (en) * | 2007-06-29 | 2010-06-02 | 朗姆研究公司 | Inductively coupled dual zone processing chamber with single planar antenna |
| CN102163538A (en) * | 2010-02-22 | 2011-08-24 | 株式会社新动力等离子体 | Multi inductively coupled plasma reactor and method thereof |
-
2013
- 2013-12-31 CN CN201310750632.5A patent/CN104752140B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1183853A (en) * | 1994-12-06 | 1998-06-03 | 拉姆研究有限公司 | Plasma processor for large workpieces |
| US6179955B1 (en) * | 1998-08-03 | 2001-01-30 | Samsung Electronics Co., Ltd. | Dry etching apparatus for manufacturing semiconductor devices |
| CN101720500A (en) * | 2007-06-29 | 2010-06-02 | 朗姆研究公司 | Inductively coupled dual zone processing chamber with single planar antenna |
| CN102163538A (en) * | 2010-02-22 | 2011-08-24 | 株式会社新动力等离子体 | Multi inductively coupled plasma reactor and method thereof |
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| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 100176 No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |