CN104752140A - Reaction chamber and plasma processing device - Google Patents
Reaction chamber and plasma processing device Download PDFInfo
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- CN104752140A CN104752140A CN201310750632.5A CN201310750632A CN104752140A CN 104752140 A CN104752140 A CN 104752140A CN 201310750632 A CN201310750632 A CN 201310750632A CN 104752140 A CN104752140 A CN 104752140A
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Abstract
The invention relates to a reaction chamber and a plasma processing device. The reaction chamber comprises a power supply, a medium window, a connecting sidewall and a plane coil, wherein the medium window is manufactured from nonconductive material and is horizontally arranged on the top part of the reaction chamber; one or a plurality of medium windows are provided, including at least one first medium window which is not in the same level with the top wall of the reaction chamber; the first medium window is fixedly connected with the top wall of the reaction chamber through the connecting sidewall; the first medium window is matched with the connecting sidewall to divide the inner part of the reaction chamber into a plurality of areas; the plane coil is positioned above the medium window and electrically connected with the power supply; when connecting with the power supply, the plane coil generates an electromagnetic field to excite technical gas in the corresponding area in the reaction chamber into plasma. According to the reaction chamber, the distribution of plasma in the reaction chamber and the density of the plasma in the reaction chamber can be controlled; the efficiency of sensing and coupling to generate plasma can be increased.
Description
Technical field
The present invention relates to semiconductor equipment and manufacture field, particularly, relate to a kind of reaction chamber and plasma processing device.
Background technology
The techniques such as plasma processing device mainly etches workpiece to be machined by the plasma produced in reaction chamber, deposition; Particularly, it generally produces plasma by following manner in reaction chamber: in the induction coil be located on reaction chamber, load radio-frequency power, make it generate an electromagnetic field in reaction chamber, thus the process gas in reaction chamber is coupled as plasma.
Fig. 1 is the structural representation of the first reaction chamber existing.Refer to Fig. 1, be provided with induction coil 2 above the roof of reaction chamber 1, induction coil 2 is that it is connected with radio-frequency power supply 3 planar according to the planar coil that certain way is wound around.In technical process, radio-frequency power supply 3 loads radio-frequency power to induction coil 2, induction coil 2 can be made to generate an electromagnetic field in reaction chamber 1, the process gas in reaction chamber 1 is coupled as plasma.
In above-mentioned reaction chamber 1, the electromagnetic field produced due to induction coil 2 is not Uniform Electromagnetic Field, and this makes the skewness of plasma in reaction chamber 1; Further, in the region the closer to induction coil 2, the density of plasma is higher, and its distribution is correspondingly more uneven.In actual applications, distance generally by increasing workpiece to be machined and induction coil 2 makes plasma more even in the distribution on workpiece to be machined surface, but the density of the plasma of workpiece to be machined surf zone can be caused so lower, thus reduce the speed of etching or depositing operation, and then reduce the production efficiency of plasma processing device.
Fig. 2 is the structural representation of existing the second reaction chamber.Refer to Fig. 2, the roof of reaction chamber 4 is provided with a cylinder shape medium window 5 and multiple annular medium window 6 concentric with medium window 5; Wherein, the side-wall outer side of medium window 5 is surrounded with coil 7, and the side-wall outer side of each medium window 6 is surrounded with coil 8; Coil 7 is all connected with radio-frequency power supply 9 with coil 8.In technical process, radio-frequency power supply 9 loads radio-frequency power to coil 7 and coil 8, it can be made to generate an electromagnetic field in reaction chamber 4, the process gas in reaction chamber 4 is coupled as plasma; Further, by being loaded on the radio-frequency power on coil 7 and coil 8, can when workpiece to be machined distance medium window 5 and medium window 6 far away, make the plasma on workpiece to be machined surface have higher density and good distributing homogeneity.
But in actual applications, inevitably there is following problems in above-mentioned reaction chamber 4, that is: the plasma on workpiece to be machined surface is made to have in the technical process of higher density by the radio-frequency power be loaded on coil 7 and coil 8, more energy can be consumed, and make the coupling efficiency of coil 7 and coil 8 lower; Simultaneously, be loaded on the radio-frequency power on coil 7 and coil 8, also make the corresponding increase of the density of the plasma of the inside sidewalls of medium window 5 and medium window 6, which increases the capacitive bombardment of plasma to the inwall of medium window 5 and medium window 6, thus the sidewall of medium window 5 and medium window 6 can be caused therefore to be subject to larger loss; And, the amplitude that the sidewall of medium window 5 and medium window 6 heats up because of the capacitive bombardment of plasma is also caused to increase, which increases the temperature gradient between each region on medium window 5 and medium window 6 sidewall, thus causing when said temperature gradient exceeds the tolerance range of medium window 5 and medium window 6, therefore medium window 5 and medium window 6 can rupture.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art, propose a kind of reaction chamber and plasma processing device, it by producing plasma independently in one or more regions of reaction chamber inside, controls and regulate density and the distributing homogeneity of plasma in reaction chamber of the plasma in reaction chamber.
There is provided a kind of reaction chamber for realizing object of the present invention, for carrying out PROCESS FOR TREATMENT to workpiece to be machined, described reaction chamber comprises power supply, medium window, connection sidewall peace planar coil; Described medium window is horizontally placed on the top of described reaction chamber, and it is made up of non-conducting material; The quantity of described medium window is one or more, and is not in the first medium window in same level with the roof of described reaction chamber comprising at least one; Described first medium window is fixedly connected with the roof of described reaction chamber by described connection sidewall, and described first medium window and described connection sidewall match described reaction chamber inside division is multiple region; Described planar coil is arranged at the top of medium window, and is connected with described power electric, for when being connected with power supply, generates an electromagnetic field, and the process gas in region corresponding with it in reaction chamber is coupled as plasma.
Wherein, described connection sidewall is made up of electric conducting material or non-conducting material.
Wherein, the quantity of described first medium window is one, and its in the vertical direction is lower than the roof of described reaction chamber, and it is positioned at the vertical top of the workpiece to be machined of described reaction chamber.
Wherein, the diameter of described medium window is greater than the diameter of described workpiece to be machined.
Wherein, the roof of described reaction chamber is made up of one or more medium window.
Wherein, be positioned at planar coil above described first medium window and be positioned at described anabolic reaction chamber roof medium window above the difference in height of planar coil in the vertical direction be greater than 50mm.
Wherein, the distance between the outer wall of described planar coil and described medium window and described reaction chamber is greater than 25mm.
Wherein, the quantity of described medium window is multiple; The quantity of described planar coil is multiple, and it is located at above different medium windows respectively; Described each planar coil is connected one to one with a power supply, and the Phase synchronization between the multiple power supplys be connected with multiple planar coil; Or be connected with a power supply after described multiple planar coil is connected in parallel to each other or connects, and the sense of current in described multiple planar coil is consistent.
Wherein, described reaction chamber comprises gas supply system, described gas supply system comprises multiple air vent hole, and described multiple air vent hole is communicated with the zones of different in described reaction chamber respectively, for passing into the process gas of respective quality flow to the zones of different in described reaction chamber.
Wherein, described reaction chamber also comprises gas mass flow and controls meter or pneumatic operated valve, and described gas mass flow control meter or pneumatic operated valve are for controlling the mass flow of the process gas passing into zones of different in described reaction chamber through multiple air vent hole.
As another technical scheme, the present invention also provides a kind of plasma processing device, comprises reaction chamber, and described reaction chamber adopts above-mentioned reaction chamber provided by the invention.
The present invention has following beneficial effect:
Reaction chamber provided by the invention, its first medium window be connected sidewall and match and will be divided into multiple region in reaction chamber, and by being located at coupled plasma in planar coil above medium window one or more regions wherein, thus can be undertaken controlling and regulating by the density of the distribution of the efficiency plasma of plasma generation in control above-mentioned zone in reaction chamber and reaction chamber chamber piasma, and then plasma can be made to be evenly distributed in the respective regions of reaction chamber, and there is corresponding density; In addition, reaction chamber provided by the invention adopts planar coil, the solenoid type coil adopted compared to existing technology, its efficiency is inductively higher, and plasma can be reduced bombard the capacitive of medium window, prevent medium window from therefore damaging, thus the useful life of medium window can be extended.
Plasma processing device provided by the invention, it adopts above-mentioned reaction chamber provided by the invention, density and the distribution of plasma in reaction chamber of reaction chamber chamber piasma can be controlled, and plasma is evenly distributed in the respective regions of reaction chamber, and there is corresponding density; The efficiency inductively producing plasma can also be improved, and plasma can be reduced the capacitive of medium window is bombarded, prevent medium window from therefore damaging, thus the useful life of medium window can be extended.
Accompanying drawing explanation
Fig. 1 is the structural representation of the first reaction chamber existing;
Fig. 2 is the structural representation of existing the second reaction chamber;
The structural representation of the reaction chamber that Fig. 3 provides for first embodiment of the invention;
Fig. 4 is the schematic top plan view of reaction chamber shown in Fig. 3;
Fig. 5 is the schematic diagram that planar coil is connected with power supply;
The schematic diagram that Fig. 6 is made up of non-conducting material for connecting sidewall in reaction chamber shown in Fig. 3;
Fig. 7 is the schematic diagram that two planar coils are connected in parallel to each other;
Fig. 8 is the schematic diagram that two planar coils are one another in series;
Fig. 9 to be the quantity of reaction chamber medium window be schematic diagram of;
The structural representation of the reaction chamber that Figure 10 provides for second embodiment of the invention; And
The schematic diagram that Figure 11 is made up of non-conducting material for connecting sidewall in reaction chamber shown in Figure 10.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, reaction chamber provided by the invention and plasma processing device are described in detail.
The structural representation of the reaction chamber that Fig. 3 provides for first embodiment of the invention.Fig. 4 is the schematic top plan view of reaction chamber shown in Fig. 3.See also Fig. 3 and Fig. 4, reaction chamber 10 is for carrying out PROCESS FOR TREATMENT to workpiece to be machined 11, and it comprises power supply 12, medium window 13, planar coil 14, connects sidewall 15 and gas supply system 16.Wherein, medium window 13 is horizontally placed on the top of reaction chamber 10, and it is made up of non-conducting material; The quantity of medium window 13 is one or more, and is not in the first medium window 131 in same level with the roof of reaction chamber 10 comprising at least one; First medium window 131 is connected with the roof of reaction chamber 10 by connecting sidewall 15, and first medium window 131 is with being connected sidewall 15, and to match reaction chamber 10 inside division be multiple region.Particularly, in the present embodiment, connect sidewall 15 to be made up of electric conducting material; The quantity of medium window 13 is two, and one of them is first medium window 131; This first medium window 131 in the vertical direction is lower than the roof of reaction chamber 10, it is positioned at the vertical top of reaction chamber 10 workpiece to be machined 11, and its diameter is greater than the diameter of workpiece to be machined 11, thus reaction chamber 10 inside division can be two regions such as the annular region B being in region A below first medium window 131 and circle zone A with being connected that sidewall 15 matches by this first medium window 131, and workpiece to be machined 11 is in the A of region completely.
In the present embodiment, the roof of reaction chamber 10 is another medium window 132 in two medium windows 13 except first medium window 131.Particularly, medium window 132 is annular, and it is around first medium window 131; And the difference between the external diameter of medium window 132 and internal diameter is greater than 40mm.
Gas supply system 16 comprises multiple air vent hole, and multiple air vent hole is communicated with the zones of different in reaction chamber 10 respectively, for passing into the process gas of respective quality flow to the zones of different in reaction chamber 10.Particularly, in the present embodiment, multiple air vent hole comprises the air vent hole 161 be communicated with region A and the air vent hole 162 be communicated with annular region B; Wherein, the quantity of air vent hole 161 and 162 can be one or more.
Planar coil 14 is arranged at the top of medium window 13, and be electrically connected with power supply 12, for when being connected with power supply 12, generate an electromagnetic field in reaction chamber 10 through medium window 13, and then the process gas in region corresponding with it in reaction chamber 10 is coupled as plasma.Particularly, in the present embodiment, planar coil 14 comprises the planar coil 141 be located at above first medium window 131 and the planar coil 142 be located at above medium window 132.Further, as shown in Figure 5, planar coil 141 is connected with a power supply 12 by adaptation 121, and planar coil 142 is connected with another power supply 12 by adaptation 122; Further, control cable 120 by Phase synchronization between two power supplys 12 be connected with planar coil 141 and planar coil 142 and connect, make the Phase synchronization between two power supplys 12, produce interference each other to avoid planar coil 141 and planar coil 142.
In the present embodiment, the process producing plasma in reaction chamber 10 is as follows: gas supply system 16 passes into process gas by air vent hole 161 and 162 in the region A in reaction chamber 10 and annular region B; Planar coil 141 is connected with power supply 12 respectively with 142, and generates an electromagnetic field in reaction chamber 10; Wherein, the process gas in the A of region is coupled as plasma by the electromagnetic field that planar coil 141 produces, and the process gas in annular region B is coupled as plasma by the electromagnetic field that planar coil 142 produces; Thus plasma is produced in reaction chamber 10.
In above process, because planar coil 141 coupled plasma and planar coil 142 process of coupled plasma in annular region B in the A of region is independent of each other, therefore in actual applications, can by control plane coil 141 respectively in the A of region and planar coil 142 speed of coupled plasma in annular region B make the plasma in region A and annular region B have corresponding density, thus can control and regulate the distribution of plasma in reaction chamber 10; And then the plasma in reaction chamber 10 can be made by the way to have good uniformity and higher density, make the techniques such as the etching of reaction chamber 10 pairs of workpieces to be machined, deposition have higher uniformity, also there is higher production efficiency simultaneously.
In the present embodiment, plasma is produced by planar coil 14 coupling technique gas, uses solenoid type coil coupling process gas to be plasma compared to existing technology, and its efficiency is inductively higher; And plasma can be reduced bombard the capacitive of medium window 13, thus reduce the amplitude that the loss that is subject to of medium window 13 and medium window 13 heat up because of plasma bombardment, prevent medium window 13 from therefore damaging, and then the useful life of medium window 13 can be extended.
In sum, the reaction chamber that the present embodiment provides, its first medium window 131 be connected sidewall 15 and match and be divided into multiple region by reaction chamber 10, and by being located at coupled plasma in planar coil 14 above medium window 13 one or more regions wherein, thus can be undertaken controlling and regulating by the density of plasma in the distribution of the efficiency plasma of plasma generation in control above-mentioned zone in reaction chamber 10 and reaction chamber 10, and then plasma can be made to be evenly distributed in the respective regions of reaction chamber 10, and there is corresponding density, in addition, the reaction chamber that the present embodiment provides adopts planar coil, the solenoid type coil adopted compared to existing technology, its efficiency is inductively higher, and plasma can be reduced bombard the capacitive of medium window 13, prevent medium window 13 from therefore damaging, thus the useful life of medium window 13 can be extended.
In the present embodiment, reaction chamber 10 also comprises gas mass flow and controls meter or pneumatic operated valve, and it is for controlling the mass flow passing into the process gas of zones of different in reaction chamber 10 through air vent hole 161 and 162; In actual applications, by controlling the mass flow passing into the process gas of zones of different in reaction chamber 10, can the efficiency of control plane coil 14 coupled plasma in reaction chamber 10 zones of different, thus control density and the distribution of plasma in reaction chamber 10 of the plasma in reaction chamber 10.
In the present embodiment, the distance between the outer wall of planar coil 14 and medium window 13 and reaction chamber 10 is greater than 25mm; Planar coil 141 above first medium window 131 and the difference in height between the planar coil above medium window 132 142 are greater than 50mm.
It should be noted that, in the present embodiment, connect sidewall 15 and be made up of electric conducting material, but the present invention is not limited to this, in actual applications, as shown in Figure 6, connecting sidewall 15 can also be made up of non-conducting material; In the case, connect sidewall 15 except connection first medium window 131 and medium window 132, it is also equivalent to the vertical medium window of planar coil 141, make planar coil 141 through connecting sidewall 15, the process gas in annular region B can be coupled as plasma, thus its coupling efficiency can be increased, and improve the density of the plasma of respective regions in reaction chamber 10.
Also it should be noted that, in the present embodiment, planar coil 141 and 142 is electrically connected with a power supply 12 respectively, identical with the phase place of two power supplys 12 that 142 connect with planar coil 141, but the present invention is not limited to this, in actual use, as shown in Figure 7 and Figure 8, planar coil 141 is connected with a power supply 12 after can also being connected in parallel to each other with 142 or connecting, and makes planar coil 141 consistent with the sense of current in 142, produces interference each other to avoid planar coil 141 and 142.
In addition, in the present embodiment, the quantity of medium window 13 is two, but the present invention is not limited to this, and in actual applications, the quantity of medium window 13 can also be one; Particularly, as shown in Figure 9, this medium window 13 in the vertical direction is lower than the roof of reaction chamber 10, and it is positioned at the vertical top of the workpiece to be machined 11 of reaction chamber 10; Further, the diameter of this medium window 13 is greater than the diameter of workpiece to be machined 11; In the case, this medium window 13 and connection sidewall 15 match same is two regions such as region A and annular region B by reaction chamber 10 inside division; In actual use, process gas in the A of region is inductively plasma by the planar coil 14 be located at above this medium window 13, and the coupling efficiency in the region of its close medium window 13 above the A of region is higher, the coupling efficiency away from the region of medium window 13 below the A of region is lower; Meanwhile, the plasma cognition above the A of region spreads above annular region B, thus process gas can be made in the region A corresponding with workpiece to be machined 11 to have good distributing homogeneity.
The structural representation of the reaction chamber that Figure 10 provides for second embodiment of the invention.Please refer to Figure 10, the reaction chamber 10 that the present embodiment provides is compared with above-mentioned first embodiment, comprise power supply 12, medium window 13, planar coil 14 equally, connect sidewall 15 and gas supply system 16, because the 26S Proteasome Structure and Function of above-mentioned power supply 12, medium window 13, planar coil 14, connection sidewall 15 and gas supply system 16 there has been detailed description in the above-described first embodiment, do not repeat them here.
The reaction chamber only provided with regard to the present embodiment below and the difference of above-mentioned first embodiment are described in detail.In the present embodiment, the quantity of first medium window 131 is one, and the roof of reaction chamber 10 is made up of multiple medium window 132; Particularly, arrange above first medium window 131 by planar coil 141, above each medium window 132 of the roof of anabolic reaction chamber 10, planar coil 142 is set; First medium window 131 is by the roof of the connection sidewall 151 and 152 be made up of electric conducting material and reaction chamber 10, and namely multiple medium window 132 is fixedly connected with; And first medium window 131 be connected sidewall 151 and 152 and be divided into region A, annular region B and annular region C by reaction chamber 10.
In the present embodiment, planar coil 141 is connected with power supply 12 with the planar coil 142 be located at above multiple medium window 132, respectively process gas can be coupled as plasma in annular region B and region A, annular region C; And by control plane coil 141 and multiple planar coil 142, the efficiency of coupled plasma in annular region B and region A, annular region C can control the density of plasma plasma in the distribution and above-mentioned multiple region of the zoness of different such as region A, annular region B and annular region C, thus can control neatly and the distributing homogeneity regulating plasma in reaction chamber 10 and density.
It should be noted that, in the present embodiment, connect sidewall 151 and 152 to be made up of electric conducting material, but the present invention is not limited to this, in actual applications, as shown in figure 11, connect sidewall 151 and 152 to be made up of non-conducting material, in the case, connect sidewall 151 with 152 except being connected first medium window 131 and medium window 132, also be equivalent to the vertical medium window of planar coil 141, planar coil 141 can be passed and connect sidewall 151 and 152, in region A and annular region C, process gas is coupled as plasma, which adds the coupling efficiency of planar coil 141, the density of the plasma in region A and annular region C can also be improved simultaneously.
As another technical scheme, the embodiment of the present invention also provides a kind of plasma processing device, and it comprises reaction chamber, the reaction chamber that this reaction chamber adopts the above embodiment of the present invention to provide.
The plasma processing device that the embodiment of the present invention provides, its reaction chamber adopting the above embodiment of the present invention to provide, density and the distribution of plasma in reaction chamber of reaction chamber chamber piasma can be controlled, and plasma is evenly distributed in the respective regions of reaction chamber, and there is corresponding density; The efficiency inductively producing plasma can also be improved, and plasma can be reduced the capacitive of medium window is bombarded, prevent medium window from therefore damaging, thus the useful life of medium window can be extended.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (11)
1. a reaction chamber, for carrying out PROCESS FOR TREATMENT to workpiece to be machined, is characterized in that, described reaction chamber comprises power supply, medium window, connection sidewall peace planar coil;
Described medium window is horizontally placed on the top of described reaction chamber, and it is made up of non-conducting material; The quantity of described medium window is one or more, and is not in the first medium window in same level with the roof of described reaction chamber comprising at least one; Described first medium window is fixedly connected with the roof of described reaction chamber by described connection sidewall, and described first medium window and described connection sidewall match described reaction chamber inside division is multiple region;
Described planar coil is arranged at the top of medium window, and is connected with described power electric, for when being connected with power supply, generates an electromagnetic field, and the process gas in region corresponding with it in reaction chamber is coupled as plasma.
2. reaction chamber according to claim 1, is characterized in that, described connection sidewall is made up of electric conducting material or non-conducting material.
3. reaction chamber according to claim 1, is characterized in that, the quantity of described first medium window is one, and its in the vertical direction is lower than the roof of described reaction chamber, and it is positioned at the vertical top of the workpiece to be machined of described reaction chamber.
4. reaction chamber according to claim 3, is characterized in that, the diameter of described medium window is greater than the diameter of described workpiece to be machined.
5. reaction chamber according to claim 1, is characterized in that, the roof of described reaction chamber is made up of one or more medium window.
6. reaction chamber according to claim 5, is characterized in that, be positioned at planar coil above described first medium window and be positioned at described anabolic reaction chamber roof medium window above the difference in height of planar coil in the vertical direction be greater than 50mm.
7. reaction chamber according to claim 1, is characterized in that, the distance between the outer wall of described planar coil and described medium window and described reaction chamber is greater than 25mm.
8. reaction chamber according to claim 1, is characterized in that, the quantity of described medium window is multiple; The quantity of described planar coil is multiple, and it is located at above different medium windows respectively;
Described each planar coil is connected one to one with a power supply, and the Phase synchronization between the multiple power supplys be connected with multiple planar coil; Or
Be connected with a power supply after described multiple planar coil is connected in parallel to each other or connects, and the sense of current in described multiple planar coil is consistent.
9. reaction chamber according to claim 1, it is characterized in that, described reaction chamber comprises gas supply system, described gas supply system comprises multiple air vent hole, described multiple air vent hole is communicated with the zones of different in described reaction chamber respectively, for passing into the process gas of respective quality flow to the zones of different in described reaction chamber.
10. reaction chamber according to claim 9, it is characterized in that, described reaction chamber also comprises gas mass flow and controls meter or pneumatic operated valve, and described gas mass flow control meter or pneumatic operated valve are for controlling the mass flow of the process gas passing into zones of different in described reaction chamber through multiple air vent hole.
11. 1 kinds of plasma processing devices, comprise reaction chamber, it is characterized in that, described reaction chamber adopts the reaction chamber described in claim 1-10 any one.
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| CN201310750632.5A CN104752140B (en) | 2013-12-31 | 2013-12-31 | A kind of reaction chamber and plasma processing device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111769061A (en) * | 2020-07-27 | 2020-10-13 | 上海邦芯半导体设备有限公司 | Inductively coupled reactor and its working method |
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| US6179955B1 (en) * | 1998-08-03 | 2001-01-30 | Samsung Electronics Co., Ltd. | Dry etching apparatus for manufacturing semiconductor devices |
| CN101720500A (en) * | 2007-06-29 | 2010-06-02 | 朗姆研究公司 | Inductively coupled dual zone processing chamber with single planar antenna |
| CN102163538A (en) * | 2010-02-22 | 2011-08-24 | 株式会社新动力等离子体 | Multi inductively coupled plasma reactor and method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1183853A (en) * | 1994-12-06 | 1998-06-03 | 拉姆研究有限公司 | Plasma processor for large workpieces |
| US6179955B1 (en) * | 1998-08-03 | 2001-01-30 | Samsung Electronics Co., Ltd. | Dry etching apparatus for manufacturing semiconductor devices |
| CN101720500A (en) * | 2007-06-29 | 2010-06-02 | 朗姆研究公司 | Inductively coupled dual zone processing chamber with single planar antenna |
| CN102163538A (en) * | 2010-02-22 | 2011-08-24 | 株式会社新动力等离子体 | Multi inductively coupled plasma reactor and method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111769061A (en) * | 2020-07-27 | 2020-10-13 | 上海邦芯半导体设备有限公司 | Inductively coupled reactor and its working method |
| CN111769061B (en) * | 2020-07-27 | 2024-11-12 | 上海邦芯半导体科技有限公司 | Inductively coupled reactor and working method thereof |
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