CN203910744U - Adaptability coupling plasma etching machine - Google Patents
Adaptability coupling plasma etching machine Download PDFInfo
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- CN203910744U CN203910744U CN201420169762.XU CN201420169762U CN203910744U CN 203910744 U CN203910744 U CN 203910744U CN 201420169762 U CN201420169762 U CN 201420169762U CN 203910744 U CN203910744 U CN 203910744U
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- bottom electrode
- etching machine
- plasma etching
- coupling plasma
- lining
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Abstract
The utility model provides an adaptability coupling plasma etching machine at least comprising a reaction cavity having a reaction space and used for generating plasma in the reaction space, a lower electrode arranged in the reaction cavity and used for supporting a wafer, a liner arranged in an upper central zone of the reaction cavity, and a protrusion coil assembly formed by spirally extending from the liner; the liner is connected with a radio frequency power supply; the lower electrode is connected with at least one radio frequency bias voltage source; the liner and the lower electrode are uniformly controlled by synchronization pulses. The liner and the lower electrode of the adaptability coupling plasma etching machine are controlled by the synchronization pulse so as to realize simultaneous switch function, thus reducing electronic temperature in the reaction cavity; the protrusion coil assembly can adjust the electronic temperature in the reaction cavity, so electronic temperature is more uniform. Furthermore, the lower electrode can be connected with more than one radio frequency power supplies, when a high frequency radio frequency is connected, silicon etching can be carried out; when a middle frequency or a low radio frequency are connected, dielectric etching can be carried out.
Description
Technical field
The utility model relates to field of semiconductor devices, particularly relates to a kind of adaptability coupling plasma etching machine.
Background technology
Generally speaking, etching process, especially dry etching process are the processes that pre-determines part of removing low layer with plasma according to the photoresist layer pattern on semiconductor wafer or hard mask light shield pattern, for this dry etching can be carried out, need in reaction chamber, generate plasma.Be used for generating isoionic source and can be divided into inductive couple plasma source (Inductively Coupled Plasma, ICP) and capacitive coupling plasma source (Capacitively Coupled Plasma, CCP).
Fig. 1 is the generalized section of conventional capacitive coupling plasma source.As shown in Figure 1, described capacitive coupling plasma source comprises bottom electrode 120 and top electrode 100, and bottom electrode 120 is arranged in the bottom of reaction chamber 100, and top electrode 110 is positioned at described reaction chamber 100 tops and faces bottom electrode 120.Top electrode 110 and bottom electrode 120 are all flat, utilize the characteristic of the electric capacity being formed by described two electrodes in reaction chamber, to generate plasma.Using when this CCP source, although there is the advantage of high course replay and high photoresist layer etching selection ratio, thereby there is the low shortcoming that causes high energy consumption of plasma density simultaneously.
Fig. 2 is the schematic diagram in conventional inductive couple plasma source, and as shown in Figure 2, described inductive couple plasma source comprises the bottom electrode 220 and the coil block 210 that is positioned at reaction chamber 200 tops and faces mutually with described bottom electrode 220 that are positioned at reaction chamber 200 middle and lower parts.Bottom electrode 220 is tabulars, and can use the characteristic of the inductor being formed by coil block 210 in reaction chamber, to generate plasma.The advantage that uses this ICP source is that etch rate is high and plasma density is large, and energy consumption is low.On the other hand, the shortcoming of ICP is that photoresist layer etching selection ratio and course replay are low, and may pollute aluminum dome in the time using aluminum dome.
In view of this, ICP and CCP respectively have pluses and minuses, cannot ensure etching selection ratio and etch rate simultaneously.In prior art, a kind of adaptability coupling plasma etching machine (Adaptively Coupled Plasma has been proposed, ACP), as shown in Figure 3, described adaptability coupling plasma etching machine comprises: be assemblied in reaction chamber 300 middle and lower parts for carrying the bottom electrode 320 of wafer 340, be arranged on lining 310 and the coil block 330 on reaction chamber 300 tops, wherein, described coil block 330 extends and around described lining 310 spirally from described lining 310, described lining 310 is connected with radio-frequency power supply 360, described bottom electrode 320 is connected with a rf bias source 370, thereby in reaction chamber 300, form plasma 350.This ACP etching machine is integrated with the advantage of ICP and CCP.But, in this etching machine, generally only connect a rf bias source, can not carry out etching to silicon and dielectric layer, and the electron temperature that this etching machine produces is very high, easily damages wafer simultaneously.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of adaptability coupling plasma etching machine, be used for solving in prior art ACP reaction chamber and can not carry out etching to silicon and dielectric layer simultaneously, and the high problem of electron temperature in reaction chamber.
For achieving the above object and other relevant objects, the utility model provides a kind of adaptability coupling plasma etching machine, for etching wafer, it is characterized in that, described adaptability coupling plasma etching machine at least comprises:
There is reaction compartment and in reaction compartment, produce plasma reaction chamber, be arranged in described reaction chamber and for support described wafer bottom electrode, be arranged at the lining in described reaction chamber central upper portion region and the convex surface coil block extending to form spirally from described lining;
Described lining is connected with a radio-frequency power supply; Described bottom electrode is connected with at least one rf bias source; Described lining and bottom electrode are by lock-out pulse control.
As the structure of a kind of optimization of the utility model adaptability coupling plasma etching machine, described lining is rotatable type lining, and its rotating shaft is vertical with the upper wall of reaction chamber.
As the structure of a kind of optimization of the utility model adaptability coupling plasma etching machine, described lining and bottom electrode are iron plate.
As the structure of a kind of optimization of the utility model adaptability coupling plasma etching machine, the material of described coil block is any one in silver, copper, aluminium, gold or platinum.
As the structure of a kind of optimization of the utility model adaptability coupling plasma etching machine, the distance between described lining and bottom electrode is adjustable.
As the structure of a kind of optimization of the utility model adaptability coupling plasma etching machine, the distance range between described lining and bottom electrode is 2～25cm.
As the structure of a kind of optimization of the utility model adaptability coupling plasma etching machine, described bottom electrode is connected with a temperature controller, and the temperature of bottom electrode is within the scope of 0～100 DEG C described in described temperature controller control.
As mentioned above, adaptability coupling plasma etching machine of the present utility model, comprises structure: there is reaction compartment and in reaction compartment, produce plasma reaction chamber, be arranged in described reaction chamber and for support described wafer bottom electrode, be arranged at the lining in described reaction chamber central upper portion region and the convex surface coil block extending to form spirally from described lining; Described lining is connected with a radio-frequency power supply; Described bottom electrode is connected with at least one rf bias source; Described lining and bottom electrode are by lock-out pulse control.Lining in adaptability coupling plasma etching machine of the present utility model and bottom electrode are by lock-out pulse control, realize the function of Simultaneous Switching, can reduce the electron temperature in reaction chamber, in addition, being connected radio-frequency power supply with bottom electrode can be more than one, in the time connecting high-frequency radio frequency, can carry out silicon etching; In the time connecting intermediate frequency or low frequency radio frequency, can carry out dielectric etch.
Brief description of the drawings
Fig. 1 is the schematic diagram of capacitive coupling plasma source of the prior art.
Fig. 2 is the schematic diagram in inductive couple plasma of the prior art source.
Fig. 3 is the structural representation of adaptability coupling plasma etching machine of the prior art.
Fig. 4 is the section of structure of adaptability coupling plasma etching machine of the present utility model.
Fig. 5 is the structure vertical view of adaptability coupling plasma etching machine of the present utility model.
Element numbers explanation
100,200,300,400 reaction chambers
310,410 linings
120,220,320,420 bottom electrodes
110 top electrodes
210,330,430, coil block
340,440 wafers
450 quartz windows
460 rf bias sources
Embodiment
By particular specific embodiment, execution mode of the present utility model is described below, person skilled in the art scholar can understand other advantages of the present utility model and effect easily by the disclosed content of this specification.
Refer to accompanying drawing.Notice, appended graphic the illustrated structure of this specification, ratio, size etc., all contents in order to coordinate specification to disclose only, understand and read for person skilled in the art scholar, not in order to limit the enforceable qualifications of the utility model, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the utility model can produce and the object that can reach, all should still drop on the technology contents that the utility model discloses and obtain in the scope that can contain.Simultaneously, in this specification, quote as " on ", the term of D score, " left side ", " right side ", " centre " and " " etc., also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the utility model, the change of its relativeness or adjustment, changing under technology contents, when being also considered as the enforceable category of the utility model without essence.
As shown in Figure 4, the utility model body provides a kind of adaptability coupling plasma etching machine, and described adaptability plasma etching machine at least comprises: reaction chamber 400, bottom electrode 420, lining (bushing) 410, coil block 430 and rf bias source 460.
Described reaction chamber 400 has a reaction compartment, plasma and miscellaneous part that can accommodating generation in this reaction compartment.The epicoele wall of described reaction chamber 400 can be quartz window 450.
Described bottom electrode 420 is arranged at the bottom in described reaction chamber 400, but does not contact with described reaction chamber 400 bottoms.This bottom electrode 420 is for supporting wafer to be etched 440, and bottom electrode 420 is conductive plate, such as, can be iron plate etc., but be not limited to this.Further, described bottom electrode 420 can be connected with a temperature controller (diagram), described in this temperature controller control, the temperature of bottom electrode 420, within the scope of 0～100 DEG C, can indirectly be controlled wafer 450 by bottom electrode 420 and reach the required temperature of technique.
Described lining 410 is arranged at described reaction chamber 400 central upper portion regions, and described lining 410 is positioned on reaction chamber 400 epicoele walls, does not contact with epicoele wall.Described lining 410 can be cylindrical, can be also other shapes certainly as required.In addition, lining 410 is conductive plate, such as, can be iron plate etc., but be not limited to this.
Further, described lining 410 is rotatable type lining, and its rotating shaft is vertical with the upper wall of reaction chamber, certainly, also can have the deflection of certain angle.Existing lining is stationary bushing, the relative position of coil block and lining is constant, position between lining 410 of the present utility model and coil block 430 is not fixedly connected with, its relative position changes by the rotation of lining 410 in etching process, will make like this etch rate of each position on wafer 440 more balanced.
Further, the distance between described lining 410 and bottom electrode 420 is adjustable, and this distance can be selected within the scope of 5～25cm, such as, can be chosen as 5cm, 10cm, 15cm, 20cm or 25cm.In the present embodiment, the distance between described lining 410 and bottom electrode 420 is 20cm.Described lining 410 is conductive plate, such as, can be iron plate etc., but be not limited to this.
Described adaptability coupling plasma etching machine also comprises coil block 430, and the surface of this coil block 430 presents convex, and this convex surface coil block 430 extends spirally from lining, and as shown in Figure 5, the radian of described convex surface is adjustable.Utilize the coil of convex coil block in the middle of making away from reaction chamber, can ensure that like this electron temperature in the middle of reaction chamber is lower, and then the electron temperature in the middle of homogenizing distribution reaction chamber and both sides more.It should be noted that, the material of this coil block 430 adopts in silver, copper, aluminium, gold or platinum a kind of.In the present embodiment, described coil block 430 is elected copper coil temporarily as.
In addition, described lining 410 is connected with radio-frequency power supply (diagram), and the frequency of this radio-frequency power supply for example, can be 13.56MHZ.Described bottom electrode 420 is connected with at least one rf bias source 460, for simplicity, has only illustrated a rf bias source 460 in Fig. 4.According to etching technics needs, the rf frequency in rf bias source 460 can be high frequency, intermediate frequency or low frequency.For example, high frequency can be the rf bias source of 13.56MHZ; Intermediate frequency can be the rf bias source of 2MHZ, and low frequency can be the rf bias source of hundreds of KHZ.Wherein, utilize high-frequency radio frequency can carry out silicon etching; Utilize intermediate frequency or low frequency radio frequency can carry out dielectric etching, therefore, can on bottom electrode 420, connect the rf bias source 460 of different frequency to realize etch silicon and dielectric simultaneously in ACP simultaneously.Described radio-frequency power supply and rf bias source 460 drive by lock-out pulse, can Simultaneous Switching, reduce the electron temperature in ACP reaction chamber, and lock-out pulse has good control for the etching depth of wafer 440 close quarterses.
In sum, the adaptability coupling plasma etching machine that the utility model provides at least comprises: there is reaction compartment and in reaction compartment, produce plasma reaction chamber, be arranged in described reaction chamber and for support described wafer bottom electrode, be arranged at the lining in described reaction chamber central upper portion region and the convex surface coil block extending to form spirally from described lining; Described lining is connected with a radio-frequency power supply; Described bottom electrode is connected with at least one rf bias source; Described lining and bottom electrode are by lock-out pulse control.Lining in adaptability coupling plasma etching machine of the present utility model and bottom electrode are by lock-out pulse control, realize the function of Simultaneous Switching, can reduce the electron temperature in reaction chamber, in addition, being connected radio-frequency power supply with bottom electrode can be more than one, in the time connecting high-frequency radio frequency, can carry out silicon etching; In the time connecting intermediate frequency or low frequency radio frequency, can carry out dielectric etch.
So the utility model has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all can, under spirit of the present utility model and category, modify or change above-described embodiment.Therefore, have in technical field under such as and conventionally know that the knowledgeable modifies or changes not departing from all equivalences that complete under spirit that the utility model discloses and technological thought, must be contained by claim of the present utility model.
Claims (7)
1. an adaptability coupling plasma etching machine, for etching wafer, is characterized in that, described adaptability coupling plasma etching machine comprises:
There is reaction compartment and in reaction compartment, produce plasma reaction chamber, be arranged in described reaction chamber and for support described wafer bottom electrode, be arranged at the lining in described reaction chamber central upper portion region and the convex surface coil block extending to form spirally from described lining;
Described lining is connected with a radio-frequency power supply; Described bottom electrode is connected with one or more rf bias source; Described lining and bottom electrode are by lock-out pulse control.
2. adaptability coupling plasma etching machine according to claim 1, is characterized in that: described lining is rotatable type lining, and its rotating shaft is vertical with the upper wall of reaction chamber.
3. adaptability coupling plasma etching machine according to claim 1, is characterized in that: described lining and bottom electrode are iron plate.
4. adaptability coupling plasma etching machine according to claim 1, is characterized in that: the material of described coil block is any one in silver, copper, aluminium, gold or platinum.
5. adaptability coupling plasma etching machine according to claim 3, is characterized in that: the distance between described lining and bottom electrode is adjustable.
6. adaptability coupling plasma etching machine according to claim 5, is characterized in that: the distance range between described lining and bottom electrode is 2～25cm.
7. adaptability coupling plasma etching machine according to claim 1, is characterized in that: described bottom electrode is connected with a temperature controller, and the temperature of bottom electrode is within the scope of 0～100 DEG C described in described temperature controller control.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420169762.XU CN203910744U (en) | 2014-04-09 | 2014-04-09 | Adaptability coupling plasma etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420169762.XU CN203910744U (en) | 2014-04-09 | 2014-04-09 | Adaptability coupling plasma etching machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203910744U true CN203910744U (en) | 2014-10-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201420169762.XU Expired - Fee Related CN203910744U (en) | 2014-04-09 | 2014-04-09 | Adaptability coupling plasma etching machine |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106816396A (en) * | 2015-11-27 | 2017-06-09 | 中芯国际集成电路制造(上海)有限公司 | A kind of plasma processing apparatus |
| CN110047728A (en) * | 2019-03-26 | 2019-07-23 | 上海华力微电子有限公司 | A kind of insulating base and dry etching equipment |
-
2014
- 2014-04-09 CN CN201420169762.XU patent/CN203910744U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106816396A (en) * | 2015-11-27 | 2017-06-09 | 中芯国际集成电路制造(上海)有限公司 | A kind of plasma processing apparatus |
| CN106816396B (en) * | 2015-11-27 | 2019-10-25 | 中芯国际集成电路制造(上海)有限公司 | A kind of plasma processing apparatus |
| CN110047728A (en) * | 2019-03-26 | 2019-07-23 | 上海华力微电子有限公司 | A kind of insulating base and dry etching equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141029 Termination date: 20190409 |