CN106816396A - A kind of plasma processing apparatus - Google Patents
A kind of plasma processing apparatus Download PDFInfo
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- CN106816396A CN106816396A CN201510846236.1A CN201510846236A CN106816396A CN 106816396 A CN106816396 A CN 106816396A CN 201510846236 A CN201510846236 A CN 201510846236A CN 106816396 A CN106816396 A CN 106816396A
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- power supply
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- frequency power
- processing apparatus
- electric pole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
Abstract
The present invention provides a kind of plasma processing apparatus, including：Processing chamber housing；It is arranged on the electric pole plate above processing chamber housing；Multiple inductance-coupled coils, its top for being arranged at the processing chamber housing, and stretched out from the electric pole plate, and helically around the electric pole plate；Electrostatic chuck, it is arranged in the processing chamber housing, for carrying handled object；Bottom electrode plate, it is located at the electrostatic chuck lower section, wherein, the electric pole plate is connected with radio-frequency power supply on first, and the bottom electrode plate is connected with lower radio-frequency power supply and DC bias source.Plasma processing apparatus of the invention, on the basis of having CCP and ICP plasmas concurrently, further enhancing the effect of ICP, so that plasma density increases, and by applying synchronous rf bias and asynchronous Dc bias, the energy integrated distribution of ACP plasmas can be adjusted in the range of process requirements, the flexibility of equipment and the accuracy with treatment is substantially increased.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of corona treatment dress
Put.
Background technology
Corona treatment be semiconductor equipment manufacture in indispensable technology, at present wait from
Daughter generating source can be divided into inductive coupling plasma (ICP) and capacitance coupling plasma
(CCP).Advantage using CCP is with process replicability high and anti-relative to photic
Erosion agent film has etching selectivity high, but the density of its plasma for being limited by generation is low,
So as to bring huge energy ezpenditure.On the other hand, although being conducive to obtaining highly dense using ICP
The plasma of degree so as to reduce energy ezpenditure, while can realize article on plasma volume density and from
The independent control of sub- energy, but its shortcoming be relative to photoresist film low selectivity with
And low process replicability.In order to there is CCP and ICP simultaneously, it is recently proposed
Self adaptation lotus root closes plasma (ACP).
Fig. 1 shows the knot of the ACP plasma processing apparatus according to prior art embodiment
Structure is illustrated.Fig. 2 is the top view in the ACP sources shown in Fig. 1.Referring to Figures 1 and 2,
Plasma processing apparatus with ACP plasma sources 100 include shell 210, described
Shell 210 limits the processing chamber housing 200 for producing plasma 400 wherein.Chip branch
Support 220 is arranged at the lower area of the inner space of plasma process chamber 200, is suitable to
Chip 300 is supported thereon.ACP sources 100 are arranged on the upper surface of shell 210.The ACP
Source includes electric pole plate 110 at its center and is stretched out with spiral from the electric pole plate 110
Unit coil 120 of the shape ground around the electric pole plate 110.The flat plate shaped wafer support 220
Lower radio frequency (RF) power supply 230 is connected to, and the electric pole plate 110 is connected to radio frequency electrical
Source 240.ACP sources 100 with said structure pass through lower flat shape wafer support 220
With the advantage that electric pole plate 110 shows CCP sources, and shown by unit coil 120
The advantage of ICP source.
However, this plasma processing apparatus with ACP plasma sources 100 are still
There is electron temperature higher, it is easy to cause the problem of substrate damage.It is therefore desirable to propose one kind
Improved plasma processing apparatus.
The content of the invention
In view of the shortcomings of the prior art, the present invention proposes a kind of improved plasma processing apparatus
The energy integrated distribution of ACP plasmas can be adjusted in the range of process requirements, significantly
Improve the flexibility of equipment and the accuracy with treatment.
One embodiment of the present of invention provides a kind of plasma processing apparatus, adaptive for producing
Coupled plasma is answered, and corona treatment is implemented to handled object by the plasma,
Characterized in that, the plasma processing apparatus include：Processing chamber housing；It is arranged on processing chamber housing
The electric pole plate of top；Multiple inductance-coupled coils, its top for being arranged at the processing chamber housing,
And stretched out from the electric pole plate, and helically around the electric pole plate；Electrostatic chuck,
It is arranged in the processing chamber housing, for carrying handled object；Bottom electrode plate, it is located at institute
Electrostatic chuck lower section is stated, wherein, the electric pole plate is connected with radio-frequency power supply on first, described
Bottom electrode plate is connected with lower radio-frequency power supply and DC bias source.
Further, the multiple inductance-coupled coil include relatively described electric pole plate spiral to
Under part and the upward part of relatively described electric pole plate spiral.
Further, on described first the pulse of radio-frequency power supply and the lower radio-frequency power supply pulse
Phase is identical.
Further, radio-frequency power supply is identical with the frequency of the lower radio-frequency power supply on described first.
Further, radio-frequency power supply is different from the frequency of the lower radio-frequency power supply on described first.
Further, on described first the pulse of radio-frequency power supply and the DC bias source pulse
Opposite in phase.
Further, the electric pole plate is also associated with radio-frequency power supply on second.
Further, on described first in the pulse and second of radio-frequency power supply radio-frequency power supply pulse
Opposite in phase.
Further, the frequency-adjustable of the lower radio-frequency power supply.
Further, the distance between the electric pole plate and the bottom electrode plate are adjustable.
Plasma processing apparatus of the invention, have the basis of CCP and ICP plasmas concurrently
On, further enhancing the effect of ICP so that plasma density increases, and by applying
Synchronous rf bias and asynchronous Dc bias, the energy that can adjust ACP plasmas are concentrated
Be distributed in the range of process requirements, substantially increase equipment flexibility and and treatment it is accurate
Property.
Brief description of the drawings
Drawings below of the invention is in this as a part of the invention for understanding the present invention.It is attached
Embodiments of the invention and its description are shown in figure, for explaining principle of the invention.
In accompanying drawing：
Fig. 1 shows the knot of the ACP plasma processing apparatus according to prior art embodiment
Structure is illustrated；
Fig. 2 is the top view in the ACP sources shown in Fig. 1；
Fig. 3 shows that the structure of plasma processing apparatus according to an embodiment of the invention is shown
It is intended to；
Fig. 4 shows the electric pole plate and inductive line of the plasma processing apparatus in Fig. 3
The sectional view of the amplification of circle；
Fig. 5 shows the impulse waveform of each power supply that the plasma processing apparatus in Fig. 3 are used
Figure；
It is different that Fig. 6 A~Fig. 6 C show that plasma processing apparatus of the invention apply
The Energy distribution change schematic diagram of plasma during bias generator；
Fig. 7 is shown with lock-out pulse there may be peak energy plasma higher；
Fig. 8 shows the structure of plasma processing apparatus according to another embodiment of the present invention
Schematic diagram；
Fig. 9 shows the impulse waveform of each power supply that the plasma processing apparatus in Fig. 8 are used
Figure.
Specific embodiment
In the following description, a large amount of concrete details are given to provide to the present invention more
Thoroughly understand.It is, however, obvious to a person skilled in the art that of the invention
Can be carried out without one or more of these details.In other examples, in order to keep away
Exempt to obscure with the present invention, be not described for some technical characteristics well known in the art.
It should be appreciated that the present invention can be implemented in different forms, and it is not construed as office
It is limited to embodiments presented herein.On the contrary, providing these embodiments disclosure will be made thoroughly and complete
Entirely, and will fully convey the scope of the invention to those skilled in the art.In the accompanying drawings,
For clarity, the size and relative size in Ceng He areas may be exaggerated.It is identical attached from start to finish
Icon note represents identical element.
In order to thoroughly understand the present invention, detailed step and in detail will be proposed in following description
Thin structure, to explain technical scheme.Presently preferred embodiments of the present invention is retouched in detail
State it is as follows, but except these detailed description in addition to, the present invention can also have other embodiment.
Embodiment one
Fig. 3 shows that the structure of plasma processing apparatus according to an embodiment of the invention is shown
It is intended to；Fig. 4 shows the electric pole plate and inductive of the plasma processing apparatus in Fig. 3
The sectional view of the amplification of coil.Reference picture 3 and Fig. 4, with ACP plasma sources 400
Plasma processing apparatus include shell 510, the shell 510 limited for producing wherein
The processing chamber housing 500 of raw plasma 400.Electrostatic chuck 520 is arranged at corona treatment
The lower area of the inner space of chamber 500, the handled object for carrying such as chip 300.
The under or within of the electrostatic chuck 520 is provided with bottom electrode plate (not shown), for
Radio-frequency power supply is connected.
Additionally, can be stretched with the surface relative to electrostatic chuck 520 on the surface of electrostatic chuck 520
The mode for going out return is provided with for supporting chip 300 so that its wafer support for being lifted
Pin (not shown).The support of support electrostatic chuck 520 is provided with below electrostatic chuck 520
Part, and be wherein preferably provided with and can carry out flexible mechanism, to adjust electrostatic chuck
The height (not shown) of 520/ bottom electrode plate, and then adjust energy of plasma.
It is understood that in present embodiment, electrostatic chuck 520 and bottom electrode plate are integrated in
Together, and in other embodiments, electrostatic chuck 520 and bottom electrode plate can be separated,
Or electrostatic chuck 520 and bottom electrode plate merge into a part, now it is made up of conductor.
The ACP sources 400 are arranged on the upper surface of shell 510.The ACP sources include position
In its center electric pole plate 410 and from the electric pole plate 410 stretch out spirally around
Multiple inductance-coupled coils 420 of the electric pole plate 410.The bottom electrode plate is connected to down to be penetrated
Frequently (RF) power supply 530 and DC bias source 540, and the electric pole plate 410 is connected to
Radio-frequency power supply 550 on one.ACP sources 400 with said structure by lower electric battery lead plate and
Electric pole plate 410 shows the advantage in CCP sources, and by multiple inductance-coupled coils 420
Show the advantage of ICP source.
In the present embodiment, in order to further improve the density of plasma, make with ACP
The characteristics of plasma processing apparatus of plasma source 400 show more ICP plasmas,
On the one hand the present embodiment increases electric pole plate with the roof of processing chamber housing 500 apart from d, to increase
The distance between electric pole plate and bottom electrode plate, so that weaken the effect of CCP plasmas,
On the other hand after the multiple inductance-coupled coil 420 stretches out from the electric pole plate 410, one
The relatively described downward spiral of electric pole plate 410 in part extends, as shown in 420A in Fig. 4；One
The relatively described spiral of electric pole plate 410 in part is upwardly extended, as shown in 420B in Fig. 4.This
Sample, further increases the effect of ICP plasmas, is easy to increase plasma density, and
Reduce energy ezpenditure.
Meanwhile, in order to the plasma processing apparatus with ACP plasma sources 400 have
High etch-selectivity, as shown in figure 5, in the present embodiment, radio-frequency power supply on described first
550 pulse is identical with the impulse phase of the lower radio-frequency power supply 530, radio frequency on described first
The pulse of power supply 550 is opposite with the impulse phase of the DC bias source 540.
Exemplarily, in the present embodiment, the frequency of radio-frequency power supply 550 is 13.56MHZ on first,
The frequency of lower radio-frequency power supply 530 is 13.56MHZ or 2MHZ or hundreds of KHZ.That is,
Radio-frequency power supply 550 can be with identical with the frequency of lower radio-frequency power supply 530 on one, it is also possible to different.
Or, alternatively, the frequency-adjustable of the lower radio-frequency power supply 530, to select to close as needed
Suitable frequency.
The above-mentioned radio-frequency power supply of the present embodiment and grid bias power supply are illustrated with reference to 6A~Fig. 6 C
Advantage is set.
As shown in Figure 6A, it shows a kind of plasma apparatus processing unit for applying different biass
Ion energy distribution diagram, from Fig. 6 A, for different biass, its acquisition ion
Energy is different, and ion energy distribution scope is wider, shows Fig. 6 A as ion energies
Peak it is wider, and in plasma apparatus processing unit shown in Fig. 6 B, due to the radio frequency for applying
It is lock-out pulse to bias, so that ion energy distribution scope is narrower, shows Fig. 6 B i.e.
For the peak of ion energy is narrower.Further, in the plasma apparatus processing unit shown in Fig. 6 C
In, due to the rf bias and Dc bias that apply simultaneously, and rf bias lock-out pulse, directly
Stream bias is asynchronous pulse, so that ion energy distribution scope is not only narrower, and is passed through
Regulation Dc bias can also adjust the size of ion energy, the i.e. height at ion energy peak.
As can be seen here, in the present embodiment, on the one hand, by making to be applied to electric pole plate 410
With the first of inductance-coupled coil on radio-frequency power supply pulse be applied on bottom electrode plate 510
Lower radio-frequency power supply 530 impulse phase it is identical so that the Energy distribution of plasma is narrower,
Accurate treatment can be so realized, such as Si-Si bond can be 2.3eV or so, and the key of SiN
Can be 3.5eV, and be narrowed by making the Energy distribution of plasma, such as can make plasma
Equivalent distribution concentrate between 2ev~2.5ev so that the energy of the ACP plasmas of formation
Si-Si bond is enough only interrupted, and not enough interrupts Si-N keys, so as to realize accurate treatment or realize
High selectivity in plasma etching.
On the other hand, Dc bias is applied on bottom electrode plate 520 by DC bias source 540,
Make the impulse phase of radio-frequency power supply 550 in the pulse and first of the Dc bias simultaneously conversely, because
And the energy of the ACP plasmas of formation can be adjusted, so further realize above-mentioned
Si-Si bond is interrupted, without interrupting Si-N keys, that is, realizes accurately processing or realizing plasma
High selectivity in etching.Such as by the energy of precise control ACP plasmas, carving
Silicon nitride is only removed in erosion, without removing silicon or polysilicon.
In summary, in the present embodiment, it is inclined by applying synchronous rf bias and asynchronous direct current
Pressure, can adjust the energy integrated distribution of ACP plasmas in the range of process requirements,
Substantially increase the flexibility of equipment and the accuracy with treatment.
Embodiment two
Fig. 7 is shown with lock-out pulse there may be peak energy plasma higher, by scheming
7 understand, when the radio-frequency power supply of the applying on electric pole plate and inductance-coupled coil and in lower electricity
During the rf bias lock-out pulse applied on pole plate, it is possible in the case of some phase delays
Or when radio-frequency power supply and the rf bias phase a certain angle of difference, produce peak energy very high
Plasma, the plasma can cause the damage of the devices such as substrate, in order to overcome this difficult,
We apply two kinds of RF source powers, and two kinds simultaneously on electric pole plate and inductance-coupled coil
RF source power under interaction conversely, can avoid above-mentioned issuable peak energy very
Plasma high.
Fig. 8 shows the structure of plasma processing apparatus according to another embodiment of the present invention
Schematic diagram；Fig. 9 shows the pulse of each power supply that the plasma processing apparatus in Fig. 8 are used
Oscillogram.As shown in Figure 8 and Figure 9, with the plasma of ACP plasma sources 500
Processing unit includes shell 710, and the shell 710 is limited for producing plasma wherein
400 processing chamber housing 700.Electrostatic chuck 720 is arranged at plasma process chamber 700
The lower area of inner space, the handled object for carrying such as chip 300.Described quiet
The under or within of electric card disk 720 is provided with bottom electrode plate (not shown), for radio-frequency power supply
Connection.
Additionally, can be stretched with the surface relative to electrostatic chuck 720 on the surface of electrostatic chuck 720
The mode for going out return is provided with for supporting chip 300 so that its wafer support for being lifted
Pin (not shown).The support of support electrostatic chuck 720 is provided with below electrostatic chuck 720
Part, and be wherein preferably provided with and can carry out flexible mechanism, to adjust electrostatic chuck
The height (not shown) of 720/ bottom electrode plate, and then adjust energy of plasma.
The ACP sources 500 are arranged on the upper surface of shell 710.The ACP sources include position
In its center electric pole plate 510 and from the electric pole plate 510 stretch out spirally around
Multiple inductance-coupled coils 520 of the electric pole plate 510.The bottom electrode plate is connected to down to be penetrated
Frequently (RF) power supply 730 and DC bias source 740, and the electric pole plate 510 is connected to
Radio-frequency power supply 760 on radio-frequency power supply 750 and second on one.ACP sources with said structure
500 advantages that CCP sources are shown by lower electric battery lead plate and electric pole plate 510, and by many
Individual inductance-coupled coil 520 shows the advantage of ICP source.
In the present embodiment, in order to further improve the density of plasma, make with ACP
The characteristics of plasma processing apparatus of plasma source 500 show more ICP plasmas,
The set-up mode of electric pole plate 510 and inductance-coupled coil 520 and foregoing implementation in the present embodiment
Electric pole plate 410 is identical with the set-up mode of inductance-coupled coil 420 in example, so on the one hand
The distance of increase electric pole plate 510 and the roof of processing chamber housing 700, with increase electric pole plate and under
The distance between battery lead plate, so that weaken the effect of CCP plasmas, it is on the other hand described
After multiple inductance-coupled coils 520 stretch out from the electric pole plate 510, a part is relatively described
The downward spiral of electric pole plate 510 extends, and the relatively described spiral of electric pole plate 510 of a part is upward
Extend, further increase the effect of ICP plasmas, be easy to increase plasma density,
And reduce energy ezpenditure.
Meanwhile, in order to the plasma processing apparatus with ACP plasma sources 500 have
High etch-selectivity, as shown in figure 9, in the present embodiment, radio-frequency power supply on described first
750 pulse is identical with the impulse phase of the lower radio-frequency power supply 730, radio frequency on described first
The pulse of power supply 750 is opposite with the impulse phase of the DC bias source 740.
Exemplarily, in the present embodiment, the frequency of radio-frequency power supply 750 is 13.56MHZ on first,
The frequency of lower radio-frequency power supply 70 is 13.56MHZ or 2MHZ or hundreds of KHZ.That is, first
Upper radio-frequency power supply 750 can be with identical with the frequency of lower radio-frequency power supply 730, it is also possible to different.Or
Person, alternatively, the frequency-adjustable of the lower radio-frequency power supply 730 is suitable to select as needed
Frequency.
Further, in the present embodiment, also it is applied with second simultaneously on electric pole plate 510
Upper radio-frequency power supply, the as shown in Figure 9 radio-frequency power supply on radio-frequency power supply 760 and first on second
750 impulse phase by reciprocal effect conversely, so that avoid high peak energies
The generation of plasma.
Equally, in the present embodiment, by applying synchronous rf bias and asynchronous Dc bias,
The energy integrated distribution of ACP plasmas can be adjusted in the range of process requirements, significantly
Improve the flexibility of equipment and the accuracy with treatment.
The present invention is illustrated by above-described embodiment, but it is to be understood that, it is above-mentioned
Embodiment is only intended to citing and descriptive purpose, and is not intended to limit the invention to described
Scope of embodiments in.In addition it will be appreciated by persons skilled in the art that the present invention not office
It is limited to above-described embodiment, teaching of the invention can also make more kinds of variants and modifications,
These variants and modifications are all fallen within scope of the present invention.Protection of the invention
Scope is defined by the appended claims and its equivalent scope.
Claims (10)
1. a kind of plasma processing apparatus, for producing self adaptation coupled plasma, and
By the plasma to handled object implement corona treatment, it is characterised in that the grade from
Daughter processing unit includes：
Processing chamber housing；
It is arranged on the electric pole plate above processing chamber housing；
Multiple inductance-coupled coils, its top for being arranged at the processing chamber housing, and from described
Battery lead plate stretches out, and helically around the electric pole plate；
Electrostatic chuck, it is arranged in the processing chamber housing, for carrying handled object；
Bottom electrode plate, it is located at the electrostatic chuck lower section,
Wherein, the electric pole plate is connected with radio-frequency power supply on first, and the bottom electrode plate is with
Radio-frequency power supply and DC bias source are connected.
2. plasma processing apparatus as claimed in claim 1, it is characterised in that described
Multiple inductance-coupled coils include the part of relatively described electric pole plate downward spiral and relative institute
State the upward part of electric pole plate spiral.
3. plasma processing apparatus as claimed in claim 2, it is characterised in that described
The pulse of radio-frequency power supply is identical with the impulse phase of the lower radio-frequency power supply on first.
4. plasma processing apparatus as claimed in claim 2, it is characterised in that described
Radio-frequency power supply is identical with the frequency of the lower radio-frequency power supply on first.
5. plasma processing apparatus as claimed in claim 2, it is characterised in that described
Radio-frequency power supply is different from the frequency of the lower radio-frequency power supply on first.
6. plasma processing apparatus as claimed in claim 2, it is characterised in that described
The pulse of radio-frequency power supply is opposite with the impulse phase of the DC bias source on first.
7. plasma processing apparatus as described in one of claim 1-6, it is characterised in that
The electric pole plate is also associated with radio-frequency power supply on second.
8. plasma processing apparatus as claimed in claim 7, it is characterised in that described
On first in the pulse of radio-frequency power supply and second pulse of radio-frequency power supply opposite in phase.
9. plasma processing apparatus as claimed in claim 1, it is characterised in that described
The frequency-adjustable of lower radio-frequency power supply.
10. plasma processing apparatus as claimed in claim 1, it is characterised in that described
The distance between electric pole plate and the bottom electrode plate are adjustable.
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| CN201510846236.1A CN106816396B (en) | 2015-11-27 | 2015-11-27 | A kind of plasma processing apparatus |
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| CN201510846236.1A CN106816396B (en) | 2015-11-27 | 2015-11-27 | A kind of plasma processing apparatus |
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| CN106816396B CN106816396B (en) | 2019-10-25 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108315714A (en) * | 2018-02-27 | 2018-07-24 | 苏州大学 | The preparation method of controllable high-density plasma preparation facilities and graphene film |
| CN110047728A (en) * | 2019-03-26 | 2019-07-23 | 上海华力微电子有限公司 | A kind of insulating base and dry etching equipment |
| CN110289235A (en) * | 2019-07-09 | 2019-09-27 | 北京北方华创微电子装备有限公司 | Hood-opening device and semiconductor processing equipment |
| CN111092008A (en) * | 2018-10-24 | 2020-05-01 | 江苏鲁汶仪器有限公司 | Inductively coupled plasma etching equipment and etching method |
| WO2020088169A1 (en) * | 2018-10-30 | 2020-05-07 | 北京北方华创微电子装备有限公司 | Sensing coil assembly and reaction chamber |
| CN112863983A (en) * | 2019-11-28 | 2021-05-28 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly for plasma processing apparatus and plasma processing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108315714A (en) * | 2018-02-27 | 2018-07-24 | 苏州大学 | The preparation method of controllable high-density plasma preparation facilities and graphene film |
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| CN110047728A (en) * | 2019-03-26 | 2019-07-23 | 上海华力微电子有限公司 | A kind of insulating base and dry etching equipment |
| CN110289235A (en) * | 2019-07-09 | 2019-09-27 | 北京北方华创微电子装备有限公司 | Hood-opening device and semiconductor processing equipment |
| CN112863983A (en) * | 2019-11-28 | 2021-05-28 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly for plasma processing apparatus and plasma processing apparatus |
| CN112863983B (en) * | 2019-11-28 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly for plasma processing apparatus and plasma processing apparatus |
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|---|---|
| CN106816396B (en) | 2019-10-25 |
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