CN112863983B - Lower electrode assembly for plasma processing apparatus and plasma processing apparatus - Google Patents
Lower electrode assembly for plasma processing apparatus and plasma processing apparatus Download PDFInfo
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- CN112863983B CN112863983B CN201911191612.2A CN201911191612A CN112863983B CN 112863983 B CN112863983 B CN 112863983B CN 201911191612 A CN201911191612 A CN 201911191612A CN 112863983 B CN112863983 B CN 112863983B
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- radio frequency
- plasma processing
- processing apparatus
- electrode assembly
- resistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
Abstract
A bottom electrode assembly for plasma processing equipment and plasma processing equipment are provided, a radio frequency resistance structure is connected in series between a radio frequency high voltage conductor part of the bottom electrode assembly and the ground, one end of the radio frequency resistance structure is connected with the radio frequency high voltage conductor part, the other end of the radio frequency resistance structure is grounded, the direct current resistance of the radio frequency resistance structure is less than or equal to 100MΩ, and the radio frequency impedance is more than or equal to 100KΩ. According to the invention, the radio-frequency resistance structure is added between the radio-frequency high-voltage component and the ground, and although static electricity is generated in the flowing process of the insulating liquid, the radio-frequency impedance of the radio-frequency resistance structure is larger, so that the radio frequency is difficult to be grounded through the radio-frequency resistance structure, and meanwhile, the direct-current resistance of the radio-frequency resistance structure is smaller, so that the generated static electricity can be led into the ground through the radio-frequency resistance, and therefore, the high-voltage breakdown damage caused by static electricity accumulation is prevented.
Description
Technical Field
The present invention relates to the field of semiconductor devices, and more particularly, to a lower electrode assembly for a plasma processing apparatus and a plasma processing apparatus.
Background
In the field of semiconductor manufacturing technology, it is often necessary to perform plasma treatment on a substrate to be treated. The process of performing plasma treatment on the substrate to be treated needs to be performed in a plasma treatment apparatus.
Plasma processing apparatus generally comprise a vacuum reaction chamber within which is disposed a carrier for carrying a substrate to be processed, the carrier generally comprising a base and an electrostatic chuck disposed above the base for holding the substrate. The radio frequency high-voltage conductor component is arranged below the base and connected with a radio frequency source, reaction gas is introduced into the vacuum reaction cavity, and the reaction gas is ionized to generate plasma under the radio frequency excitation to process the substrate. In order to reduce the heat of the substrate, a cooling pipeline is usually arranged in the base, and the heat on the electrostatic chuck and the substrate is taken away by adopting a circulating refrigeration mode. Since the cooling pipe in the base is operated in a radio frequency environment, insulating liquid is adopted as a heat conducting medium in the cooling pipe, but the insulating liquid can rub with some insulators in the cooling pipe in the flowing process to generate static electricity, and the static electricity can be accumulated on the radio frequency high-voltage conductor component. The rf high-voltage conductor component generally conducts rf by means of capacitance, so that for dc, the rf high-voltage conductor component is in a floating state, when static charges accumulate in the rf high-voltage conductor component, the potential of the rf high-voltage conductor component increases sharply, and when a certain threshold value is reached, for example, 1-2 kv, the fragile insulating component breaks down by means of arc to discharge to ground, resulting in damage to devices such as an insulating liquid transmission pipeline and an rf isolation magnetic ring.
Disclosure of Invention
The invention provides a lower electrode assembly for plasma treatment equipment and the plasma treatment equipment, which can effectively eliminate high-voltage breakdown damage caused by static electricity accumulation and solve the problem of static charge accumulation caused by the existing high-resistance cooling pipeline.
In order to achieve the above object, the present invention provides a lower electrode assembly for a plasma processing apparatus, comprising:
a susceptor disposed within a vacuum reaction chamber of the plasma processing apparatus;
an electrostatic chuck disposed on the base, the electrostatic chuck carrying a substrate to be processed thereon;
the cooling pipeline is arranged in the base, and two ends of the cooling pipeline are led out of the vacuum reaction cavity and then connected with the cooling liquid storage equipment;
the radio frequency high-voltage conductor component is arranged below the base;
and one end of the radio frequency resistor structure is connected with the radio frequency high-voltage conductor component, the other end of the radio frequency resistor structure is grounded, the direct current resistance of the radio frequency resistor structure is smaller than or equal to 100MΩ, and the radio frequency impedance is larger than or equal to 100KΩ.
The radio frequency high voltage conductor component comprises: the device comprises a device board, a radio frequency rod connected with the device board and a matcher connected with the radio frequency rod.
In one embodiment of the present invention, one end of the rf resistor structure is connected to the device board, and the other end is grounded.
In another embodiment of the present invention, the rf resistor structure is located in the matcher, and one end of the rf resistor structure is connected to the rf rod, and the other end is connected to the casing of the matcher.
In another embodiment of the present invention, the lower electrode assembly further includes: the isolation block surrounds the radio frequency rod, the radio frequency resistor structure is positioned in the isolation block, the radio frequency resistor structure is positioned outside the matcher, one end of the radio frequency resistor structure is connected with the radio frequency rod, and the other end of the radio frequency resistor structure is grounded.
In one embodiment of the present invention, the rf resistor structure includes only rf resistors.
In another embodiment of the present invention, the rf resistor structure includes an rf resistor and a non-rf resistor connected in series, wherein the resistance of the rf resistor is 100kΩ to 10mΩ, and the resistance of the non-rf resistor is 10mΩ to 100mΩ.
In one embodiment of the present invention, the lower electrode assembly further comprises: and the radio frequency power source is connected with the matcher.
In one embodiment of the present invention, when the electrostatic chuck is a temperature controllable electrostatic chuck, the lower electrode assembly further comprises: the alternating current source is connected with the temperature-controllable electrostatic chuck; a radio frequency filter positioned between the alternating current source and the temperature-controllable electrostatic chuck; and the radio frequency isolation magnetic ring is positioned in the radio frequency filter.
In one embodiment of the present invention, the lower electrode assembly further comprises: an insulating ring positioned below the equipment plate; the insulating ring is made of antistatic material and is used as a radio frequency resistor.
The present invention also provides a plasma processing apparatus comprising:
a vacuum reaction chamber;
the air inlet device is arranged at the top of the vacuum reaction cavity and is used for providing reaction gas into the vacuum reaction cavity;
the lower electrode assembly.
The plasma processing device is a capacitive coupling plasma processing device or an inductive coupling plasma processing device. Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
in the lower electrode assembly, the radio frequency resistance structure is added between the radio frequency high-voltage component and the ground, and although static electricity is generated in the flowing process of the insulating liquid, the radio frequency impedance of the radio frequency resistance structure is large, so that the radio frequency is difficult to be grounded through the radio frequency resistance structure, meanwhile, the direct current resistance of the radio frequency resistance structure is small, the generated static electricity can be led into the ground through the radio frequency resistance, and therefore high-voltage breakdown damage caused by static electricity accumulation is prevented.
Drawings
Fig. 1 is a schematic view showing the structure of a plasma processing apparatus including a lower electrode assembly according to the present invention;
FIG. 2 is a schematic diagram of a bottom electrode assembly connected to an RF resistor structure in one embodiment of the invention;
FIG. 3 is a schematic diagram of a bottom electrode assembly connected to an RF resistor structure in another embodiment of the invention;
FIG. 4 is a schematic diagram of a lower electrode assembly connected to an RF resistor structure in yet another embodiment of the invention;
fig. 5 is a schematic diagram of a lower electrode assembly connected to an rf resistor structure in yet another embodiment of the invention.
Detailed Description
Embodiments of the present invention will be specifically described below with reference to fig. 1 to 5.
Fig. 1 is a schematic view of a structure of a plasma processing apparatus including a lower electrode assembly according to the present invention.
As shown in fig. 1, the plasma processing apparatus comprises a vacuum reaction chamber 1, a susceptor 2 is disposed in the vacuum reaction chamber 1, an electrostatic chuck 3 is disposed on the susceptor 2, and the electrostatic chuck 3 is used for carrying a substrate W to be processed. A cooling pipeline 4 is arranged in the base 2, two ends of the cooling pipeline 4 are led out of the vacuum reaction cavity 1 and are connected with a cooling liquid storage device (not shown in the figure), insulating liquid circularly flows in the cooling pipeline 4, and heat on the base 2 and the electrostatic chuck 3 is taken away through heat exchange. The lower part of the base 2 is provided with a radio frequency high voltage conductor part, and the radio frequency high voltage conductor part comprises: a device board 5, a radio frequency rod 14 connected with the device board 5, and a matcher 9 connected with the radio frequency rod 14. The equipment plate 5 is arranged at the lower part of the base 2, and the connection joints at the two ends of the cooling pipeline 4 are fixed on the equipment plate 5. The vacuum reaction chamber 1 is also internally provided with a grounding ring 6, the grounding ring 6 surrounds the base 2 and the equipment board 5, coupling radio frequency current in the vacuum reaction chamber can be led into the ground, the grounding ring 6 has an airtight effect, the inside of the grounding ring 6 is a vacuum environment, the grounding ring 6 is filled with a radio frequency field, and the outside of the grounding ring 6 is an atmosphere environment. An insulating ring 7 is arranged between the grounding ring 6 and the equipment board 5, and the insulating ring 7 realizes electric isolation between the equipment board 5 and the grounding ring 6. An air inlet device 8 is arranged at the top of the vacuum reaction chamber 1 and is used for providing reaction gas into the vacuum reaction chamber 1.
In this embodiment, the plasma processing apparatus is a capacitively coupled plasma processing apparatus (CCP), the air inlet device 8 is used as an upper electrode, the susceptor 2 is used as a lower electrode, and the rf power source is connected to the upper electrode or the lower electrode. The radio frequency signal generated by the radio frequency power source converts the reaction gas into plasma through a capacitor formed by the upper electrode and the lower electrode. The bias power source 10 is connected with the equipment board 5 through the matcher 9, so that plasma is uniformly distributed on the surface of the base 2, and the plasma is beneficial to moving on the surface of the substrate W to be processed, and the substrate W to be processed is processed.
In other embodiments, the plasma processing apparatus is an inductively coupled plasma processing apparatus (ICP), an insulating window is provided at the top of the vacuum reaction chamber 1, an inductance coil is provided on the insulating window, the inductance coil is connected with a radio frequency power source, so that the reaction gas is converted into plasma, and the bias power source 10 is connected with the apparatus board 5 through the matcher 9, so that the plasma moves towards the surface of the base 2, and the plasma is beneficial to processing the substrate W to be processed.
In other embodiments, when the electrostatic chuck is a temperature-controllable electrostatic chuck, the electrostatic chuck is further connected to an ac source, a radio frequency filter is disposed between the ac source and the temperature-controllable electrostatic chuck, and a radio frequency isolation magnetic ring is disposed in the radio frequency filter. The high-voltage radio-frequency component is usually isolated from the ground, namely, the high-voltage radio-frequency component is in direct-current insulation with the ground, so that a loop of the radio-frequency to the ground through a direct-current passage is blocked, and the radio-frequency transmission cannot enter the vacuum reaction cavity to be directly short-circuited to the ground. The radio frequency high voltage component and the side wall of the vacuum reaction cavity are kept at a relatively large distance, so that the capacitance value is small, and the radio frequency current mainly passes through the main capacitance of the upper polar plate and the lower polar plate to the ground, so that the radio frequency current passes through plasma.
The insulating liquid in the cooling duct will develop an accumulation of static charges during the flow, which has been found experimentally to accumulate on the radio frequency high voltage components insulated from ground, the greater the voltage maximum of the static charge accumulation, the higher the probability of being able to break down the insulating material, with a greater risk.
In order to solve the problem of static charge accumulation on the lower electrode assembly, a radio frequency resistor structure can be directly connected in series on the radio frequency high-voltage component, and the radio frequency resistor structure is applied to a radio frequency environment, can block radio frequency transmission and can prevent heating.
The direct current resistance of the radio frequency resistance structure is smaller, so that the direct current resistance to the ground is smaller than or equal to the level of hundred megabits, the generated static electricity can be led into the ground through the radio frequency resistance, and high-voltage breakdown damage caused by static electricity accumulation can be effectively eliminated. Meanwhile, the series radio frequency resistor structure also needs to meet the characteristic of high radio frequency impedance, so that the radio frequency is difficult to be directly grounded through the loop.
In one embodiment of the present invention, the device board 5 is a metal component in the lower electrode assembly, and static electricity can be discharged by connecting a high-resistance rf resistor structure with a high resistance dc in series between the device board and the ground, the rf impedance of the rf resistor structure is high, so that the rf is difficult to be grounded through the rf resistor structure, and meanwhile, the dc resistance of the rf resistor structure is low, so that the generated static electricity can be introduced into the ground through the rf resistor structure, and the effect of eliminating static electricity accumulated charges can be achieved. As shown in fig. 2, a radio frequency resistor 11 is connected in series between the equipment board 5 and the ground, and according to experimental data, the dc resistance of the radio frequency resistor 11 should be less than 100mΩ, and meanwhile, the radio frequency resistor 11 should be a high-impedance device, and the radio frequency impedance should be above 100kΩ, so as to prevent the radio frequency from being directly grounded through the loop, and the radio frequency resistor 11 is connected in series between the equipment board and the ground directly, so that static accumulation can be effectively prevented continuously.
The rf resistor structure is grounded, so as to realize grounding, the rf resistor structure may be grounded to the side wall of the reaction chamber, and the rf resistor structure may be grounded, as shown in fig. 1, the grounded ring 6 is disposed in the vacuum reaction chamber 1, the grounded ring 6 surrounds the base 2 and the equipment board 5, and the coupling rf current in the vacuum reaction chamber can be led into the ground.
When the invention is actually measured by adopting an oscilloscope, when a radio frequency resistance structure is not connected in series between the equipment board and the ground, the maximum voltage of static charge accumulation on a radio frequency high-voltage component of the lower electrode assembly is detected to be 2800V, and after a 100MΩ radio frequency resistance structure is connected in series between the equipment board and the ground, the voltage curve mutation generated by static charge accumulation disappears, and the baseline is not obviously increased (< 10V). Therefore, the invention can effectively eliminate high-voltage breakdown damage caused by static electricity accumulation. The radio frequency resistor structure is directly connected between the equipment board and the ground in series, so that static accumulation can be continuously and effectively prevented.
In order to reduce the damage to the integrity of the vacuum reaction chamber, in another embodiment of the present invention, a radio frequency resistor structure may be disposed in the matcher, as shown in fig. 3, one end of the matcher 9 is connected to the radio frequency source 10, and the other end is connected to the equipment board 5 through the radio frequency rod 14. As shown in fig. 3, a radio frequency resistor 12 is located in the matcher 9, one end of the radio frequency resistor 12 is connected with a radio frequency rod 14, the other end is connected with a casing of the matcher 9, the direct current resistance of the radio frequency resistor 12 is also lower than 100mΩ through the grounding of the casing of the matcher, so that the generated static electricity can be led into the ground through the radio frequency resistor, and the radio frequency impedance is above 100kΩ, so that the radio frequency is difficult to be grounded through the radio frequency resistor.
In addition, the radio frequency resistor structure is arranged in the matcher, so that the installation and maintenance are convenient, the matcher is only required to be detached and maintained independently, and the vacuum reaction cavity and the components in various vacuum reaction cavities are not required to be damaged.
In another embodiment of the present invention, the rf resistor structure may be further disposed outside the matcher, and one end of the rf resistor structure is connected to the rf rod, and the other end of the rf resistor structure is grounded, as shown in fig. 4, and the rf resistor 13 is disposed in the isolation block 17, so that the electrostatic discharge arc may be reduced to the maximum extent. One end of the rf resistor 13 is connected to the rf rod 14, and the other end is grounded, and the rf resistor 13 may be made of an antistatic material, such as ESD (electrostatic discharge) plastic, or the rf resistor 13 may be made of a conductive impurity ceramic material.
In another embodiment of the present invention, as shown in fig. 1, one end of the rf rod 14 is connected to the equipment board 5, and the other end passes through the insulating ring 7, the grounding ring 16 and the vacuum reaction chamber 1, and is connected to the matcher 9, it can be seen that the insulating ring 7 contacts both the rf rod 14 and the ground, so that the insulating ring 7 can be directly transformed into an rf resistor, and the insulating ring 7 is used as an rf resistor to realize grounding of rf high-voltage components and discharge static electricity by replacing the material of the insulating ring 7 with an antistatic material (such as ESD plastic) or a conductive impurity ceramic material.
Since the rf resistor is expensive, the higher the resistance, the more expensive the rf resistor is, and in order to reduce the cost, it is considered whether the rf resistor can be replaced with a dc resistor. But the resistance value is 100MΩ, the heating condition of the direct current resistor is not optimistic, and the limit condition of basically no heating in the radio frequency field is difficult to be satisfied. As shown in fig. 5, the rf resistor 11 in fig. 2 and the rf resistor 12 in fig. 3 are replaced by a resistor combination including an rf resistor 14 connected to the rf high-voltage conductor member and a dc resistor 15 connected to the rf resistor 14 and ground at both ends thereof, respectively; the resistance of the radio frequency resistor 14 is 100KΩ -10MΩ, and the resistance of the direct current resistor 15 is 10MΩ -100deg.MΩ. Since the rf resistor 14 is connected to the rf high-voltage conductor part, so that the rf is mostly blocked by the rf resistor 14, the rf reaching the dc resistor 15 is less, namely: radio frequency is difficult to ground through a radio frequency resistor. Meanwhile, since the radio frequency reaching the direct current resistor 15 is less, the direct current resistor 15 is not easy to generate heat, and the generated static electricity can be led into the ground through the radio frequency resistor due to the small resistance of the direct current resistor 15.
The invention connects the radio frequency resistor in series on the radio frequency high voltage component of the lower electrode assembly to the ground, and discharges static electricity through the radio frequency resistor, thereby effectively eliminating high voltage breakdown damage caused by static electricity accumulation and solving the problem of static charge accumulation caused by the existing high-resistance cooling pipeline.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (11)
1. A lower electrode assembly for a plasma processing apparatus, comprising:
a susceptor disposed within a vacuum reaction chamber of the plasma processing apparatus;
an electrostatic chuck disposed on the base, the electrostatic chuck for carrying a substrate to be processed;
the cooling pipeline is arranged in the base, two ends of the cooling pipeline are led out of the vacuum reaction cavity and then connected with the cooling liquid storage equipment, and insulating liquid is stored in the cooling liquid storage equipment;
a radio frequency high voltage conductor component, the radio frequency high voltage conductor component comprising: the device comprises a device board, a radio frequency rod and a matcher, wherein the device board is positioned below the base, the radio frequency rod is connected with the device board, the matcher is connected with the radio frequency rod, and the connecting joints at two ends of the cooling pipeline are fixed on the device board;
and one end of the radio frequency resistor structure is connected with the radio frequency high-voltage conductor component, the other end of the radio frequency resistor structure is grounded, the direct current resistance of the radio frequency resistor structure is smaller than or equal to 100MΩ, and the radio frequency impedance is larger than or equal to 100KΩ.
2. The lower electrode assembly for a plasma processing apparatus as claimed in claim 1, wherein one end of the rf resistive structure is connected to an apparatus plate and the other end is grounded.
3. The bottom electrode assembly for a plasma processing apparatus as claimed in claim 1, wherein the rf resistive structure is disposed in the matcher, and one end of the rf resistive structure is connected to the rf rod and the other end is connected to a housing of the matcher.
4. The bottom electrode assembly for a plasma processing apparatus as claimed in claim 1, wherein the bottom electrode assembly further comprises: the isolation block surrounds the radio frequency rod, the radio frequency resistor structure is positioned in the isolation block, the radio frequency resistor structure is positioned outside the matcher, one end of the radio frequency resistor structure is connected with the radio frequency rod, and the other end of the radio frequency resistor structure is grounded.
5. The bottom electrode assembly for a plasma processing apparatus of claim 1, wherein the rf resistive structure comprises only an rf resistor.
6. The bottom electrode assembly for a plasma processing apparatus as claimed in claim 1, wherein the rf resistive structure comprises an rf resistor connected to the rf high-voltage conductor member and a dc resistor connected to the rf resistor and ground at both ends thereof, respectively; the resistance value of the radio frequency resistor is 100KΩ to the range
And the resistance value of the direct current resistor is 10MΩ -100 MΩ.
7. The bottom electrode assembly for a plasma processing apparatus as claimed in claim 1, wherein the bottom electrode assembly further comprises: and the radio frequency power source is connected with the matcher.
8. The bottom electrode assembly for a plasma processing apparatus as claimed in claim 1, wherein when the electrostatic chuck is a temperature controllable electrostatic chuck, the bottom electrode assembly further comprises: the alternating current source is connected with the temperature-controllable electrostatic chuck; a radio frequency filter positioned between the alternating current source and the temperature-controllable electrostatic chuck; and the radio frequency isolation magnetic ring is positioned in the radio frequency filter.
9. The bottom electrode assembly for a plasma processing apparatus as claimed in claim 1, wherein the bottom electrode assembly further comprises: an insulating ring positioned below the equipment plate; the insulating ring is made of antistatic material and is used as a radio frequency resistor.
10. A plasma processing apparatus, comprising:
a vacuum reaction chamber;
the air inlet device is arranged at the top of the vacuum reaction cavity and is used for providing reaction gas into the vacuum reaction cavity;
the lower electrode assembly according to any one of claims 1 to 9.
11. The plasma processing apparatus of claim 10, wherein the plasma processing apparatus is a capacitively coupled plasma processing apparatus or an inductively coupled plasma processing apparatus.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911191612.2A CN112863983B (en) | 2019-11-28 | 2019-11-28 | Lower electrode assembly for plasma processing apparatus and plasma processing apparatus |
| TW109134044A TWI784323B (en) | 2019-11-28 | 2020-09-30 | Lower electrode assembly for plasma treatment equipment and plasma treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911191612.2A CN112863983B (en) | 2019-11-28 | 2019-11-28 | Lower electrode assembly for plasma processing apparatus and plasma processing apparatus |
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| Publication Number | Publication Date |
|---|---|
| CN112863983A CN112863983A (en) | 2021-05-28 |
| CN112863983B true CN112863983B (en) | 2023-09-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911191612.2A Active CN112863983B (en) | 2019-11-28 | 2019-11-28 | Lower electrode assembly for plasma processing apparatus and plasma processing apparatus |
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| CN (1) | CN112863983B (en) |
| TW (1) | TWI784323B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW202121487A (en) | 2021-06-01 |
| TWI784323B (en) | 2022-11-21 |
| CN112863983A (en) | 2021-05-28 |
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