TW201218243A - Electrostatic chuck and apparatus for processing a substrate including the same - Google Patents

Abstract

In an electrostatic chuck and a process apparatus including the same, the electrostatic chuck includes an electrostatic section onto which a substrate is secured by an electrostatic force and having an electrostatic electrode for generating the electrostatic force and a first heat transfer coefficient; and a heating section positioned under the electrostatic section and heating the substrate, the heating section having a heating electrode for generating the heat and a second heat transfer coefficient greater than the first heat transfer coefficient. The substrate is uniformly heated by the electrostatic chuck in the process apparatus.

Description

201218243

TW7862PA VI. Description of the Invention: [Technical Field] The present invention relates to an electrostatic chuck and a substrate processing apparatus thereof, particularly for electrostatically solidifying (four) circuit devices such as wafers and glass plates. An electrostatic chuck of a substrate and a substrate processing apparatus therefor. [Prior Art] p In general, 'integrated circuit is fabricated on a substrate through various unit processes (such as on wafers and glass plates.) Processes such as deposition processes, etching processes, and lithography (-graphy) t-way and ion implantation (i(mimpiantati〇n)) For example, an integrated circuit device includes a semiconductor memory device and a driving circuit for a flat panel display device. The above unit process is in __ == The tooling ^ processing device includes: adding: two should be carried out by each unit; the source supply is used for the cavity in the processing cavity, and the electrostatic chuck, the position is blush, the execution of the early 70 system The substrate is fixed during the process. Usually, the force (4) is usually performed in the shut-off device, and (10) the gas of the device chamber is:: two is connected to the processing cavity and the gas is engraved to the substrate. The electrostatic portion to which the etching to be etched is fixed includes an electrostatic electrode having an electrostatic force for generating and a heating portion having a heating electrode and located under the electrostatic portion.

The TW7862PA substrate is placed above the electrostatic portion and heated by the heating portion. In the heating portion, thermal energy is generated by the heating electrode. The heating electrode is formed in a spiral shape or a repeating-and-recess shape, that is, an uneven shape. The heating electrode is uniformly disposed in the heating portion. The heating electrode has high electrical conductivity as well as thermal conductivity, and thus can efficiently generate thermal energy. The adjacent heating electrodes need to be insulated from each other in the heating portion, so that the heating portion needs to have an electrical insulator function between adjacent heating electrodes. Therefore, the heating portion has high electrical resistance and low heat conduction. For the above reasons, the heat generated in the heating portion is hardly conducted to the substrate on the electrostatic portion, so that the substrate is difficult to be uniformly heated on the conventional electrostatic chuck. SUMMARY OF THE INVENTION Embodiments provide an electrostatic chuck for fixing and uniformly heating a substrate. Other embodiments provide a processing apparatus for a substrate using an electrostatic chuck. According to some embodiments, an electrostatic chuck including an electrostatic portion is provided for fixing a substrate to an electrostatic portion above the electrostatic portion by electrostatic force, the electrostatic portion having an electrostatic electrode to generate the electrostatic force, and the electrostatic portion having a The first heat transfer coefficient electrostatic portion. The electrostatic chuck also includes a heating portion, which is located below the electrostatic portion for heating the substrate, and the heating portion has a heating electrode to be used 4 201218243

1 W7862PA generates thermal energy, and the heating portion has a second heat transfer coefficient greater than the first heat transfer coefficient. In some embodiments, the composition of the heating portion comprises a ceramic having one of aluminum nitride (A1N), magnesium oxide (Mg〇), yttrium oxide (γ2〇3), and combinations thereof. The second heat transfer coefficient ranges from 150 W/(mK) to 250 W/(mK). In some embodiments, the 'heating portion and the heating electrode have the same thickness' and the side surface of the heating electrode is covered with a heating portion. For example, the static # is as good as 1mm to 5mm. In some embodiments, the electrostatic chuck further includes an insulating portion, the insulating portion is under the heating portion, the insulating portion has a third heat transfer coefficient, and the third heat conduction coefficient is smaller than the first heat transfer coefficient. For example, the thickness of the insulating portion is between ° 〇 5 亀 and 〇 5 mm. In the embodiment, the upper surface of the heating portion is in contact with the lower surface 3 of the electrostatic portion, and the upper surface of the insulating portion is in contact with the lower surface of the heating portion. Some embodiments provide for aligning the substrate and including processing: Ϊ: the substrate is processed in the processing chamber. The device also includes a gas supply core to the processing cavity for supplying gas to the processing cavity to force the device electric chuck, located in the processing cavity, and fixed by the plate to the static electricity: above: the electric part, Through the electrostatic force, the base force 'electrostatic part has V power-on: a wide range of electrostatic electrodes are placed under the static electricity part, and the electric chuck is also used for heating. The heating part is also capable of heating, * niece + ι soil board, heating The part has a heating electrode in j number. σ...adjacent" second heat conduction chamber with the first heat transfer coefficient 201218243

TW7862PA In one embodiment, the heating portion and the heating electrode have the same thickness, and the side surface of the heating electrode is covered with the heating portion. In one embodiment, the electrostatic chuck further includes an insulating portion, the insulating portion is located under the heating portion, the insulating portion has a third heat transfer coefficient, and the third heat transfer coefficient is smaller than the first heat transfer coefficient, and the upper surface of the heating portion and the electrostatic portion The lower surface is in contact, and the lower surface of the heating portion is in contact with the upper surface of the insulating portion. According to some embodiments of the steps of the present invention, the electrostatic chuck may include an electrostatic portion, the substrate being located above the electrostatic portion, and the heating portion being located below the electrostatic portion. The heating portion has a second heat transfer coefficient and may include a heating electrode to generate thermal energy. The electrostatic portion has a first heat transfer coefficient and may include an electrostatic electrode to generate an electrostatic force. The electrostatic chuck can be constructed using a configuration such that the second heat transfer coefficient can be greater than the first heat transfer coefficient, and thus the thermal energy generated from the heated electrode can be first uniformly conducted to the heating portion, and then the thermal energy can be thermally changed due to the difference in heat transfer coefficient. It is conducted from the heating portion to the electrostatic portion. Finally, the heat can be uniformly conducted from the electrostatic portion to the substrate, thereby uniformly heating the substrate. Accordingly, the substrate can be uniformly processed by the processing gas in the processing chamber, thereby minimizing processing madness on the substrate in the processing chamber, and improving the device of the integrated circuit device fabricated in the processing device. quality. In order to better understand the above and other aspects of the present invention, the preferred embodiments are described below, and in the accompanying drawings. [Embodiment] Various embodiments will be described more fully hereinafter with reference to the accompanying drawings, in which FIG. Although the present invention has been implemented in a number of preferred ways 6 201218243

The IW / 802PA embodiment is disclosed above, but it is not intended to limit the invention. Instead, the embodiments are used to make the disclosure of the present invention more thorough and complete, and the skilled person will not depart from the spirit of the present invention. And within the scope, when you can make changes and retouch. In the drawings, the dimensions and relative sizes of layers and regions will be exaggerated for clarity. When an element or layer is referred to as being "above" or "connected" to another element or layer, it can mean directly on the other 70 or layer, or directly connected or engaged. The other elements or layers may be connected to other elements or layers, or may be connected or coupled to other intervening elements or layers. Conversely, when an element or layer is referred to as "directly" or "directly" or "directly connected" or "directly coupled" to another element or appear. Like reference numerals refer to like elements throughout. As used herein, the terms "and/or" include any and all of the items listed in the context of the above. The words "-", "second", "third" and the like may be used herein to describe various elements, components, regions, layers and/or components, but such elements, components, regions, layers and/or components It is not limited to these words. These terms are only used to distinguish one element, component, region, layer or component from another: component, component, region, layer or component. Thus, the first element, component, region or layer discussed below may also be referred to as a second element, component, region, layer or component. Spatially related terms such as "below", "lower", "above" and similar terms, where elements or features and other elements or features not shown in the figures may be readily described herein. Relationship. These empty ^ 201218243 1 w /o〇zr/\ sexual relationship terms are used to cover different directions of the device or function used in addition to the directions depicted in the figures. For example, if the device in the figures is "followed", elements that are described as "under" other elements or features are turned "above" other elements or features. Therefore, the words "under" in this example can cover the direction of "under" and "on". The device can be reversed (rotated by 9 degrees or other steering) and the spatial relationship description terms used herein are also translated. The terminology used herein is for the purpose of describing particular embodiments, As used herein, the singular forms "a" and "the" are also used to include the plural unless the context clearly recites. It will be further understood that when the words "including" and / or "comprising" are used in the specification, they are used to designate the appearance of the features, integers, steps, directions, components and/or components, but not The appearance or addition of more than one of the other features, integers, steps, directions, elements, compositions and/or groups thereof is excluded. The embodiments described herein in conjunction with the cross-sectional views are illustrative examples (and intermediate architectures) of the idealized embodiments. Therefore, variations in the shape of the drawings due to, for example, manufacturing techniques and/or tolerances are contemplated. Thus, the embodiments should not be used to limit the particular shapes of the regions depicted herein, but rather to include variations in the shape resulting from, for example, manufacturing. For example, an implanted region depicted as a rectangle has substantially circular or curved features and/or its edges may have a gradient implant concentration rather than directly transitioning from implanted to non-invasive Binary changes in the implanted area. Similarly, a buried region formed by implantation creates some implantation in the region between the buried region and the surface being implanted. Therefore, the domain depicted in the drawings is not to be construed as an <RTI ID=0.0>> 8 201218243

1 W/3C^A Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art. It should be further understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant technical literature' and should not be interpreted as idealized or overly formal. Meaning, unless explicitly defined as such. The following embodiments will be explained in detail with reference to the accompanying drawings. Fig. 1 is a cross-sectional view showing an electrostatic chuck corresponding to an exemplary embodiment of the present invention. Fig. 2 is a cross-sectional view showing the electric chuck and the insulating portion of the electrostatic chuck shown in Fig. i in detail. ' Corresponding to the present invention _ sexual reality _ _ electrostatic part 2. . And heating part 3. . Insulation Portion The electrostatic device 200 can support the substrate 10 above the electric portion 200. By way of example, m ^ can therefore be located in the case of a substrate 10 which can be used to fabricate a semiconducting turn. The wafer of the hidden body device and the glass plate electrostatic electrode 210 for mounting the flat panel display device can be mounted on the electrostatic plate to be fixed to the static chuck 100 for use in the electrostatic force of the gentleman C. It can be produced by the electrostatic electrode 210. The width includes the Anji Electric Department 2〇. Crane (W) oil (M.). L includes a relatively low thermal elongation. The electrostatic portion 200 may include an insulating ceramic having oxidation (Y2 〇 3). For example, the wisdom of education (Ai2〇3) or yttrium oxide to about _ oxidation, the basin can be included in the electrical section can be about 90%, and the rest is magnesium gas (Mgo) or yttrium oxide

201218243 I W/»O^PA (Si02). Further, the electrostatic portion 2〇〇 may include about 9〇% or more of gasification (Y203), and the rest is an oxidized junction. In such a case, the 'electrostatic portion 200 may have a volume resistance (v〇iUme resistance) of about Ωα„ to about ίο Qcm, and thus may have sufficient insulating properties. Further, the electrostatic portion 2〇〇 may have an approximate The first heat transfer coefficient is from 1 〇 w / (mK) to about 30 W / (mK). The heating portion 300 may be located above the electrostatic portion 2A, and may include a heating electrode 310 for generating thermal energy. The heating electrode 31 〇 may be heated by heating the heat generated by the electrode 310. For example, the heating electrode 31 may be formed in a spiral shape, a repeated uneven shape or an uneven shape, and uniformly disposed in the heating portion 300. The heating electrode 310 may have an approximate 005.005mm炱 〇. 3mm thickness, a width of about 0.5mm to about 10mm, and a length of about 30m in about 3m. In some embodiments, the heating electrode 310 may have an electrical impedance of about 1 Ω to about, while the substrate is It can be heated to about 〇. (: to 100 ° C. In this embodiment, the heating electrode 31 can be formed as a metal paste, which can include silver (Ag), gold (Au), nickel (Ni) , tungsten, molybdenum, titanium (Ti) and combinations thereof. Or, heating electrode 31 0 may be formed by using a metal powder, which may include tungsten, molybdenum, titanium, and combinations thereof. Alternatively, the heating electrode 310 may be formed as a metal thin film 'which may include gold, nickel, titanium, titanium nitride (TiN), and combinations thereof. The heating portion 300 may cover the side surface of the heating electrode 31. In some embodiments, the heating portion 300 may have the same thickness t1 as the heating electrode 31, and thus the side surface of the heating electrode 310 may be completely covered by the heating portion 300. In the present embodiment, the upper surface of the heating portion 300 and the heating electrode 31 are 201218243

The upper surface of the TW7862PA is coplanar, and the lower surface of the heating portion 3 is coplanar with the lower surface of the heating electrode 310. Therefore, the upper surface of the heating portion 3 and the heating electrode 310 can be in contact with the electrostatic portion 2, and the lower surface of the heating portion 3 and the heating electrode 310 can be in contact with the insulating portion 400. The structure of the heating portion 300 which covers the side surface of the heating electrode 310 can enhance the thermal conductivity of the heating portion 300 and thus the heating portion 3 can also function as another heating electrode. That is, the heating portion 300 covering the side surface of the heating electrode 31 can increase the area of the heat source including the heating electrode 31A. In some embodiments, the thickness t1 of the heating portion 3''' may be greater than the thickness of the heating electrode 310. When the thickness t1 of the heating portion 300 is about 1.5 times that of the heating electrode 310, the heat energy generated from the heating electrode 31A is conducted to the substrate 10 with poor efficiency. In this case, thermal energy may need to be generated to exceed the thermal capacitance of the heating electrode to heat the substrate 10 to about 0 ° C to 1 Torr. (The processing temperature, and thus the heating electrode 31 破 is broken due to fatigue caused by excessive heat stress. For these reasons, the thickness of the heating portion 300 may be less than about 1.5 times the thickness of the heating electrode 310. The heating portion 300 may include insulation The ceramic may be formed in a spiral shape, a repeating uneven shape or an uneven shape. Therefore, adjacent heating electrodes may be insulated from each other by the heating portion 300. Further, the heating portion 3 may have a larger heat transfer coefficient than the first heat transfer coefficient The second heat transfer coefficient, the second heat transfer coefficient ranges from about 1 〇 W / (mK) to 30 W / (mK). When the second heat transfer coefficient is less than about 15 〇 W / (mK), the heat generated from the heating electrode 310 Thermal energy is transmitted to the substrate 1〇 very slowly through the heating portion 3〇〇 and the electrostatic portion-2〇〇, so processing of the substrate can take a long processing time. In contrast, when the second heat transfer coefficient is greater than 250W /(mK), 201218243

The heat energy generated by the 1W/8WPA from the heating electrode 310 is transmitted to the substrate 1 through the heating portion 300 and the electrostatic portion 200 at a sufficiently fast speed. However, the difference between the first and second heat transfer coefficients of the electrostatic portion 2 and the heating portion 300 may cause the temperature of the electrostatic portion 200 and the heating portion 3 to be different as the processing progresses, resulting in heat. Pressure or thermal shock is concentrated to the electrostatic portion 200. Thus, as the electrostatic chuck 1 is repeatedly processed, the electrostatic portion 200 is fatigued and broken due to repeated thermal stress. Accordingly, the second heat transfer coefficient ranges from about 15 〇 w / (mK) to 250 W / (mK) so that the heat energy generated from the heating electrode 31 可 can be uniformly transmitted to the substrate 1 through the heating portion 300. For example, based on the achievement of sufficient thermal conductivity, the heating portion 3 can include about 90% aluminum nitride, with the remainder being magnesium oxide or oxidized. In the present embodiment, the heating portion 300 can be formed into a ceramic bulk, a ceramic paste, and a ceramic thin layer by a bonding process, a paste printing process, and a deposition process. The heating portion 3A has a volume resistance similar to that of the electrostatic portion 200, and is about 108 〇 (; 111 to 1 〇 16 D^m. Therefore, the heating portion 3 having the heating electrode 310 and the electrostatic portion 200 having the electrostatic electrode 210 It can be set in such a manner that the heating portion 300 having the first heat transfer coefficient is located under the static electricity having the first heat transfer coefficient, and the second heat transfer coefficient is greater than the first heat transfer coefficient. Therefore, 'generated from the heating electrode 310 The thermal energy is first uniformly conducted to the heating portion 300' and then the thermal energy is again conducted from the heating portion 3 to the electrostatic portion 200 due to the difference in heat transfer coefficient. Finally, thermal energy is uniformly conducted from the electrostatic portion 2 to the substrate 10. 12 201218243

1 W /»OZhA When the thickness t2 of the electrostatic portion 200 is less than 1 mm, heat energy is hardly uniformly conducted from the electrostatic portion 200 to the substrate, and when t2 is larger than 5 mm, heat transfer efficiency is greatly lowered, so that the substrate is heated to be processed. The temperature will take longer. Therefore, the electrostatic portion 200 may have a thickness of about 1 mm to 5 mm. The insulating portion 400 may be positioned below the heating portion 300 and prevent heat energy generated from the heating electrode 310 from being conducted downward to the body 500. That is, the heat energy generated from the heating electrode 310 can be directed to flow upward to the electrostatic portion 200. Therefore, the insulating portion 400 may have a third heat transfer coefficient smaller than the first and second heat transfer coefficients. The insulating portion 400 may include high-temperature plastic glass type ceramics such as cerium oxide, magnesium oxide, and zinc oxide (ZnO). Alternatively, the insulating portion 〇0 may also include ruthenium, a polymer, and a mixture of ruthenium and a polymer such as acrylresin and epoxy resin (ep〇xyresin). For example, the third heat transfer coefficient ranges from about W5W/(mK) to 5W/(mK)′ and has a volumetric impedance of about 1〇8Qcm to about 1〇16, which is related to the electrostatic part and the heating part. The volumetric impedance of 3GG is similar. Tian,, 'Ban margin. The thickness t3 of P 400 is less than about 〇 〇 5 and the service of the substrate 77 becomes uneven, which is due to the cooling liquid located in the lower part of the insulating portion = channel HO. Step by step, 靡 Thunderbolt 22; / Efficiency is also reduced by the coolant, so it also increases the heat transfer efficiency of the calf to compensate for the reduced heat transfer efficiency. Further, the thickness of the insulating portion 【 [3 is not enough to prevent thermal energy to - 13 201218243

The TW7862PA is conducted to the body 500' so a larger amount of coolant or cooling time is required to sufficiently cool the body 500. In contrast, when the thickness of the insulating portion 400 is more than about 〇5 mm, even if the thickness of the insulating portion 400 is further increased, the thermal blocking effect of the insulating portion 400 is not increased. Therefore, the thickness t3 of the insulating portion 400 is in the range of about 0.05 mm to 0.5 mm, so that the insulating portion 4 can block the conduction of thermal energy to the main body without an extra thickness. The body 500 may be located below the insulating portion 4〇〇, and the adhesive layer 6〇〇 may be interposed between the body 500 and the insulating portion 4〇〇. Therefore, the insulating portion 4 and the main body 500 can be bonded to each other through the adhesive layer 60. The main body 5A and the adhesive layer 600 can support the insulating portion 4's with each other, so that the combination of the main body 5''' with the puncture layer 600 can serve as a support for supporting the insulating portion 4''. The body 500 may include a passage 51〇 for circulating a coolant in the passage 51〇. The passage 510 can be uniformly disposed in the main body 5, and the main body 5 can prevent heat energy from being conducted from the heating portion 300 to be heated. Fig. 3 is a view showing a device U-face for processing a substrate and including the electrostatic chuck shown in Fig. 1. In the third embodiment, the same reference numerals as those of the first and second figures denote elements (4), and thus the same detailed description will be omitted. The apparatus for directly processing the substrate by using the electrostatic chuck shown in Fig. 1 is hereinafter referred to as a processing apparatus. The processing apparatus 1000 may include a processing chamber 700, a gas supplier 800, and an electrostatic chuck 1A. The processing chamber 700 may include internal, .+1, and M, so that the substrate 10 is loaded and processed therein to manufacture an integrated device or a circuit device such as a semiconductor memory device and used in a flat panel display. The driving circuit device of the TF device. For example, etching 201218243

The 1 W/502FA process can be implemented in the processing chamber 700. The internal space of the processing chamber can be as follows: in the case of Jingcheng, the gas supply 800 can be connected to the processing chamber 20 and can be supplied into the processing chamber. 70〇. For example, the sigma gas can be coupled to the upper portion of the processing chamber 700. ^ 'The milk supply 800 process gas 20 will change as it moves through the processing chamber 7. In the case of the process of surname engraving, the inactive gas used to produce the processing state, in the state of the ionic state (Plasma = body ' can be used as the processing gas 20 and supplied with the addition == rate power supply to the gas The supply is 8 〇〇, the body is 7 〇〇. The intermediate frequency is in the plasma state. 乂 The electrostatic chuck 100 in the processing chamber 700 can be located in the processing chamber 7 可 10 can be loaded and fixed on the electrostatic chuck 100 The boring tool and the substrate substrate 10 can be uniformly heated by referring to FIG. 1 and FIG. 2 _, so that the substrate 1 can be added to the processing chamber of the Tianjiatian cavity. The device quality of an integrated circuit device manufactured by t. In the embodiment of the invention of the invention, the electrostatic chuck may include a heating device for placing the iir electric portion electrostatic portion and the heating portion under the electrostatic portion. The heating portion of the heat transfer coefficient may include an electrostatic electrode for generating thermal energy to produce a crucible: the first heat transfer coefficient may include an electrostatic electrode using the power of the trap. The electrostatic chuck may use such a setting to add The first heat transfer coefficient may be greater than the first heat transfer coefficient Therefore, the thermal energy generated from the ",," poles can be uniformly transmitted to the heating portion first, but after 15 201218243 TW7862PA 'the heat transfer coefficient is transferred from the heating portion to the static portion because of the difference in heat transfer coefficient. Finally, the heat energy can be The substrate is uniformly heated from the electrostatic material to the substrate. Thus, the substrate can be uniformly processed in the processing cavity through the processing gas, thereby minimizing the processing defects on the substrate in the processing cavity. Moreover, the device quality of the integrated circuit device manufactured in the processing device is improved. In summary, although the present invention is disclosed above, it is not intended to limit the present invention, and anyone skilled in the art can not Within the spirit and scope of the present invention, # can be used as a purely modified disk retouching. According to this, the changes and refinements are all included in the scope of the present invention as defined in the scope of the special application. The function (m_-pluS-f_ion) clause is used to cover the functions described in the structure described herein, and covers not only structural equivalence but also etc. Therefore, the present invention has been disclosed in terms of several preferred embodiments as described above, but it is not intended to limit the scope of the disclosed embodiments. The disclosure and other embodiments are included in the scope of the lion's request. Therefore, the definition of the present invention is subject to the definition of the enclosure. Τπ 扪 扪 【 [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ Fig. 2 is a cross-sectional view showing the electrostatic portion, the heating portion, and the insulating portion of the electrostatic chuck shown in Fig. i in detail. Fig. 1 is a view showing the electrostatic drawing shown in Fig. 3 for processing the substrate and including A cross-sectional view of the device of the first chuck. 201218243

I W7862PA [Description of main components] 10: Substrate 20: Process gas 100: Electrostatic chuck 200: Electrostatic portion 210. Electrostatic electrode 300: Heating portion 310: Heating electrode 400: Insulation portion 500: Main body 510: Channel 600: Adhesive layer 700: processing cavity 800: gas supply tl: first thickness t2: second thickness t3 · · third thickness

Claims (1)

201218243 TW7862PA VII. Patent Application Range: 1. An electrostatic chuck comprising: an electrostatic portion for fixing a substrate to the electrostatic portion by electrostatic force, the electrostatic portion having an electrostatic electrode to generate the electrostatic force, The electrostatic portion has a first heat transfer coefficient; and a heating portion is disposed under the electrostatic portion for heating the substrate, the heating portion has a heating electrode to generate thermal energy, and the heating portion has a larger than the first heat conduction The second heat transfer coefficient of the coefficient. 2. The electrostatic chuck according to claim 1, wherein the composition of the heating portion comprises a ceramic having one of aluminum nitride (A1N), magnesium oxide (MgO), yttrium oxide (Y203), and combinations thereof. 3. The electrostatic chuck of claim 1, wherein the second heat transfer coefficient is in the range of 150 W/(mK) to 250 W/(mK). 4. The electrostatic chuck according to claim 1, wherein the heating portion and the heating electrode have the same thickness, and the side surface of the heating electrode is covered by the heating portion. 5. The electrostatic chuck of claim 1, wherein the electrostatic portion has a thickness of between 1 mm and 5 mm. 6. The electrostatic chuck according to claim 1, wherein an upper surface of the heating portion is in contact with a lower surface of the electrostatic portion. 7. The electrostatic chuck according to claim 1, further comprising an insulating portion, the insulating portion being located under the heating portion, the insulating portion having a third heat transfer coefficient, the third heat transfer coefficient being less than The first heat transfer coefficient. The electrostatic chuck of the seventh aspect of the invention, wherein the thickness of the insulating portion is between 〇5 mm and 〇5 mm. 9. The electrostatic chuck of claim 7, wherein an upper surface of the insulating portion is in contact with a lower surface of the heating portion. 10. A processing apparatus for processing a substrate, the apparatus comprising: a processing chamber in which the substrate is processed; a gas supply coupled to the processing chamber for supplying gas to the processing a cavity for processing the substrate; and an electrostatic chuck disposed in the processing cavity for fixing the substrate. The electrostatic chuck includes: an electrostatic portion for fixing the substrate to the static electricity by electrostatic force Above the portion, the static portion has an electrostatic electrode to generate the electrostatic force, the static portion has a first heat transfer coefficient; and - the heating portion is located under the electrostatic portion for heating the substrate, the first! The electrode is heated to generate thermal energy, and the heating portion has a second heat transfer coefficient greater than a coefficient of heat transfer. The device described in the section 1G of the second aspect, wherein the heating 2 and the heating electrode have the same thickness, and the surface of the heating electrode is covered by the heating portion. IZ, π寻利甲, please refer to the device described in item 10, in which the 哕蔷 ΐ ΐ; ΐ ΐ : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : The upper surface is in contact with the surface of the 201218243 TW7862PA of the electrostatic portion, and the lower surface of the heating portion is in contact with an upper surface of the insulating portion. 20