CN102534524B - Reaction chamber for PVD (Physical Vapor Deposition) process and PVD system - Google Patents
Reaction chamber for PVD (Physical Vapor Deposition) process and PVD system Download PDFInfo
- Publication number
- CN102534524B CN102534524B CN201010603748.2A CN201010603748A CN102534524B CN 102534524 B CN102534524 B CN 102534524B CN 201010603748 A CN201010603748 A CN 201010603748A CN 102534524 B CN102534524 B CN 102534524B
- Authority
- CN
- China
- Prior art keywords
- frequency power
- radio
- power supply
- reaction chamber
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Plasma Technology (AREA)
Abstract
The invention provides a reaction chamber for a PVD (Physical Vapor Deposition) process and a PVD system. The reaction chamber for the PVD process comprises a reaction chamber body, a lower electrode, a target and a lower electrode radio frequency power supply group, wherein the target is arranged on the top part of the reaction chamber body; the lower electrode is arranged on the bottom part in the reaction chamber body; the lower electrode radio frequency power supply group internally comprises at least two radio frequency power supplies and at least two matchers; the at least two radio frequency power supplies and the at least two matchers are in one-to-one correspondence; and the lower electrode radio frequency power supply group is used for outputting radio frequency power to the lower electrode. The two radio frequency power supplies with various frequencies in the lower electrode radio frequency power supply group are used for outputting radio frequency powers with different frequencies to the reaction chamber, so that not only is the density of plasmas increased, but also the distribution of the plasmas in the reaction chamber is more uniform, the uniformity of plasma processing wafers is favorably improved, and the requirement of PVD process is met.
Description
Technical field
The present invention relates to semi-conductor device technology field, particularly, relate to a kind of reaction chamber for PVD technique and PVD system.
Background technology
Physical vapor deposition (Physical Vapor Deposition, PVD) system is widely used in the manufacturing process of the semiconductor products such as current flat-panel monitor, and this technology obtaining plasma body by ionizing rare gas element is widely used in PVD technique at present.
Fig. 1 is the structural representation of the existing reaction chamber for PVD technique.As shown in Figure 1, the existing reaction chamber for PVD technique generally includes reaction chamber body 101, coil RF power supply 102, coil matching box 103, lower electrode 104, inductively coupled plasma (inductively coupled plasma, ICP) coil 105, first radio-frequency power supply 106 and the first matching box 107, wherein, the outer wall that ICP coil 105 is fixed on reaction chamber is connected with coil RF power supply 102 by coil matching box 103, is used for radio frequency power to input in reaction chamber; Lower electrode 104 places wafer to be processed, its lower end is connected with the first radio-frequency power supply 106 by the first matching box 107, be used for radio frequency power to input to lower electrode, make lower electrode produce radio frequency self-bias, thus make rare gas element if argon ionization is to obtain plasma body.
But, in the existing reaction chamber for PVD technique, because the plasma body of the ICP coil excitation in reaction chamber body 101 is distributed as Gradient distribution on the direction perpendicular to ICP coil plane, be not be uniformly distributed, this makes the plasma body in the vertical direction skewness in reaction chamber body 101.In addition, Fig. 2 is the existing vertical view for ICP coil in the reaction chamber of PVD technique.As shown in Figure 2, owing to there is gap between the rf inputs of ICP coil 105 and RF output end, it is not a complete circle, this can make the plasma body skewness in the horizontal direction in reaction chamber 101, cause the crystal column surface in PVD technical process uneven, the requirement of art breading can not be met.
Summary of the invention
For solving the problem, the invention provides a kind of reaction chamber for PVD technique and PVD system, for solving problem uneven for plasma distribution in the reaction chamber of PVD technique in prior art.
For this reason, the invention provides a kind of reaction chamber for PVD technique, comprise reaction chamber body, lower electrode and target, described target is arranged at the top of described reaction chamber body, described lower electrode is arranged at the intrinsic bottom of described reaction chamber, wherein, also comprise coil RF power supply, coil matching box, ICP coil and lower electrode radio-frequency power supply group, the inwall that described ICP coil is fixed on reaction chamber body is connected with coil RF power supply by coil matching box; Described lower electrode radio-frequency power supply group comprises at least two radio-frequency power supplies and at least two matching boxs, and described at least two radio-frequency power supplies and at least two matching box one_to_one corresponding; Described lower electrode radio-frequency power supply group exports the radio frequency power of at least two kinds of different frequencies, to improve the homogeneity of plasma distribution to described lower electrode.
Wherein, described lower electrode radio-frequency power supply group comprises: the first radio-frequency power supply, the first matching box, the second radio-frequency power supply, the second matching box and filter network;
Described first radio-frequency power supply is connected with described filter network by the first matching box;
Described second radio-frequency power supply is connected with described filter network by the second matching box;
Described filter network is connected with described lower electrode.
Wherein, described first matching box comprises the first electric capacity, the second electric capacity and the first inducer;
Described first radio-frequency power supply, described second electric capacity, described first inducer and described filter network are sequentially connected in series, one end ground connection of described first electric capacity, and the other end is connected between described first radio-frequency power supply and described second electric capacity.
Wherein, described second matching box comprises the 3rd electric capacity, the 4th electric capacity and the second inducer;
Described second radio-frequency power supply, described 4th electric capacity, described second inducer and described filter network are sequentially connected in series, one end ground connection of described 3rd electric capacity, and the other end is connected between described second radio-frequency power supply and described 4th electric capacity.
Wherein, described filter network comprises: the first filtering electronic circuit and the second filtering electronic circuit, and described first filtering electronic circuit and the second filtering electronic circuit are arranged in parallel.
Wherein, described first filtering electronic circuit and the second filtering electronic circuit are passive filter circuit or active filter circuit.
Wherein, described lower electrode radio-frequency power supply group comprises: the first radio-frequency power supply, the first matching box, the second radio-frequency power supply and the second matching box;
Described first radio-frequency power supply is connected to described lower electrode by described first matching box;
Described second radio-frequency power supply is connected between described first matching box and described lower electrode by described second matching box.
Wherein, described first matching box comprises the first electric capacity, the second electric capacity and the first inducer;
Described first radio-frequency power supply, described second electric capacity, described first inducer and described lower electrode are connected successively, one end ground connection of described first electric capacity, and the other end is connected between described first radio-frequency power supply and described second electric capacity.
Wherein, described second matching box comprises the 3rd electric capacity, the 4th electric capacity and the second inducer;
Described second radio-frequency power supply, described 4th electric capacity, described second inducer are connected successively with described lower electrode, one end ground connection of described 3rd electric capacity, and the other end is connected between described second radio-frequency power supply and described 4th electric capacity.
Present invention also offers a kind of PVD system, comprise the reaction chamber described in any one in multiple claim 1-3.
Wherein, described reaction chamber is thallium deposition reaction chamber or copper deposition reaction chamber.
The present invention has following beneficial effect:
Reaction chamber for PVD technique provided by the invention and PVD system, in reaction chamber, different radio frequency power is frequently exported by the radio-frequency power supply of various frequency in lower electrode radio-frequency power supply group, not only increase the density of plasma body, but also make the distribution of the plasma body in reaction chamber more even, be conducive to the homogeneity improving plasma process wafer, thus meet the requirement of PVD art breading.
Accompanying drawing explanation
Fig. 1 is the structural representation of the existing reaction chamber for PVD technique;
Fig. 2 is the existing vertical view for ICP coil in the reaction chamber of PVD technique;
Fig. 3 is the structural representation of reaction chamber first embodiment for PVD technique provided by the invention;
Fig. 4 is the structural representation of reaction chamber second embodiment for PVD technique provided by the invention;
Fig. 5 is the structural representation for lower electrode radio-frequency power supply group in reaction chamber first embodiment of PVD technique provided by the invention;
Fig. 6 is the structural representation of reaction chamber second embodiment for PVD technique provided by the invention;
Fig. 7 is the structural representation for lower electrode radio-frequency power supply group in reaction chamber second embodiment of PVD technique provided by the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, the reaction chamber for PVD technique provided by the invention and system are described in detail.
Fig. 3 is the structural representation of reaction chamber first embodiment for PVD technique provided by the invention.As shown in Figure 3, the reaction chamber that the present embodiment is used for PVD technique comprises: reaction chamber body 101, target (not shown), coil RF power supply 102, coil matching box 103, ICP coil 105, direct supply 1011, magnetron 1012, target 1013, lower electrode 104 and lower electrode radio-frequency power supply group, target is arranged at the top of reaction chamber body, lower electrode 104 is arranged at the bottom in reaction chamber body 101, lower electrode radio-frequency power supply group is connected with lower electrode 104, wherein, the matching box of 2 radio-frequency power supplies and correspondence thereof is at least comprised in lower electrode radio-frequency power supply group, at least two radio-frequency power supplies and at least two matching box one_to_one corresponding, lower electrode radio-frequency power supply group exports the radio frequency power of at least 2 kinds of different frequencies to lower electrode 104.In the present embodiment, lower electrode 104 can comprise electrostatic chuck (electrostatic chuck comprises dielectric ceramic layer and is embedded in the electrode layer in dielectric ceramic layer) and pedestal, and electrostatic chuck is arranged on pedestal; Particularly, lower electrode radio-frequency power supply group exports the radio frequency power of at least 2 kinds of different frequencies to lower electrode 104 by the radio frequency leading-in end of lower electrode 104, this radio frequency leading-in end can be a radio frequency and introduces post, this radio frequency is introduced post and is vertically arranged in the subpanel (all not illustrating in the relevant drawings of the present embodiment) of lower electrode device, and whole lower electrode 1 can be made to be installed in subpanel by pedestal this radio frequency sheathed introducing post, wherein pedestal and radio frequency introduce post for being electrically connected.
In the present embodiment, reaction chamber for PVD technique passes through the radio frequency power of radio-frequency power supply to lower electrode output different frequency of various frequency in lower electrode radio-frequency power supply group, this can not only increase the density of the plasma body in the reaction chamber at lower electrode place, and the distribution of the plasma body in reaction chamber can also be made more even, be conducive to the homogeneity improving plasma process wafer, thus meet the requirement of art breading.
Fig. 4 is the structural representation of reaction chamber second embodiment for PVD technique provided by the invention.As shown in Figure 4, the lower electrode radio-frequency power supply group that the present embodiment is used in the reaction chamber of PVD technique comprises the first radio-frequency power supply 106, first matching box 107, second radio-frequency power supply 108, second matching box 109 and filter network 110.Wherein, the first radio-frequency power supply 106 is connected on filter network 110 by the first matching box 107, and the second radio-frequency power supply 108 is connected on filter network 110 by the second matching box 109, and filter network 110 is connected with lower electrode 104.Wherein, first radio-frequency power supply 106 is different with the frequency that the second radio-frequency power supply 108 transmits respectively to electrode 104, one is low frequency radio frequency power supply, another is high frequency RF power source, such as, the rf frequency of the radio-frequency power supply in lower electrode radio-frequency power supply group can be respectively 2MHz and 60MHz, 2MHz and 40MHz, 13.56MHz and 60MHz etc.When the radio frequency power that the first radio-frequency power supply 106 and the second radio-frequency power supply 108 send is transferred on lower electrode 104 by described filter network 110, the radio frequency power that described filter network 110 is used for preventing the first radio-frequency power supply 106 from exporting arrives the second matching box 109 or the second radio-frequency power supply 108, and the radio frequency power simultaneously preventing the second radio-frequency power supply 108 from exporting arrives the first matching box 107 or the first radio-frequency power supply 106.In reaction chamber, the radio frequency power of different frequency is inputted by lower electrode 104, not only can the density of plasma body in augmenting response chamber 101, also can make being evenly distributed of the plasma body in reaction chamber 101.It should be noted that, the rf frequency that the radio-frequency power supply in lower electrode radio-frequency power supply group inputs to reaction chamber also can have more than 3 kinds or 3 kinds.
In actual applications, for the existing reaction chamber for PVD technique, because ICP coil is not a complete circle, so the distribution of its plasma body excited on the direction and horizontal direction of vertical ICP coil plane is uneven; And for being provided for the reaction chamber of PVD technique in the present embodiment, simultaneously it apply high frequency power to lower electrode on the basis of ICP coil excitation plasma body, because lower electrode can inspire uniform plasma body, therefore not only can increase the density of plasma body, and improve the homogeneity of plasma distribution.Such as, for the existing reaction chamber for PVD technique, its ICP coil applies the radio frequency power of 1000W, and on its lower electrode, apply the radio frequency power of 200W, rare gas element in reaction chamber as argon gas be ionized after the density obtained required for reality be the plasma body of ρ 1, now, the total radio frequency power to reaction chamber indoor transmissions is 1200W; And the reaction chamber for PVD technique provided in the present embodiment, its ICP coil applies the radio frequency power of 500W, and apply the radio frequency power of 500W on the bottom electrode, the plasma body that equal density is ρ 1 can be obtained equally, total radio frequency power now to reaction chamber indoor transmissions is 1000W, can find out, adopt the reaction chamber for PVD technique provided by the invention can reduce the energy expenditure of radio-frequency power supply.
Fig. 5 is the structural representation for lower electrode radio-frequency power supply group in reaction chamber first embodiment of PVD technique provided by the invention.As shown in Figure 5, in the present embodiment, the frequency of the first radio-frequency power supply 106 in lower electrode radio-frequency power supply group is 2MHz, and the frequency of the second radio-frequency power supply 108 is 40MHz, first matching box 107 comprises the first electric capacity 1071, second electric capacity 1072, first inducer 1073, first input end point 1074 and the first exit point 1075, wherein, the inductance of the first inducer 1073 is 3 μ H, first electric capacity 1071 and the second electric capacity 1072 are variable capacity, its capacitance range is all between 3000-5000pF, first radio-frequency power supply 106 is connected with the second electric capacity 1072 by first input end point 1074, the other end of the second electric capacity 1072 is connected with the first inducer 1073 again, the other end of the first inducer 1073 is connected with filter network 110 by the first exit point 1075, one end ground connection of the first electric capacity 1071, the other end is connected between the second electric capacity 1072 and the first radio-frequency power supply 106, second matching box 109 comprises the 3rd electric capacity 1091, the 4th electric capacity 1092, second inducer 1093, second input endpoint 1094 and the second exit point 1095, wherein, the inductance of the second inducer 1093 is 0.5 μ H, 3rd electric capacity 1091, the 4th electric capacity 1092 are variable capacity, and its capacitance range is all between 3000-5000pF.Second radio-frequency power supply 108 is connected with the 4th electric capacity 1092 by the second input endpoint 1094, the other end of the 4th electric capacity 1092 is connected with the second inductance 1093, second inducer 1093 is connected with filter network 110 by the second exit point 1095, one end ground connection of the 3rd electric capacity 1091, the other end is connected between the 4th electric capacity 1092 and the second radio-frequency power supply 108, filter network 110 comprises the first filtering electronic circuit and the second filtering electronic circuit, first filtering electronic circuit and the second filtering electronic circuit can be passive filter circuit or active filter circuit, filter network 110 is connected with lower electrode 104 by lower electrode input endpoint 1041, first filtering electronic circuit comprises the 3rd inducer 1101 and the 5th electric capacity 1102, wherein, one end ground connection of the 3rd inducer 1101, the other end is connected with one end of the 5th electric capacity 1102, the other end of the 5th electric capacity 1102 is connected between lower electrode input endpoint 1041 and the first exit point 1075 of the first matching box 107, second filtering electronic circuit comprises the 4th inducer 1103 and the 6th electric capacity 1104, and the two is connected in parallel rear one end ground connection, and the other end is connected between the lower electrode input endpoint 1041 of lower electrode 104 and the second exit point 1095 of the second matching box 109.
Fig. 6 is the structural representation of reaction chamber second embodiment for PVD technique provided by the invention.As shown in Figure 6, in the present embodiment, first radio-frequency power supply 106 is connected with lower electrode 104 by the first matching box 107, second radio-frequency power supply 108 is connected between the first matching box 107 and lower electrode 104 by the second matching box 109, the first radio-frequency power supply 106 and the second radio-frequency power supply 108 ground connection respectively.Fig. 7 is the structural representation for lower electrode radio-frequency power supply group in reaction chamber second embodiment of PVD technique provided by the invention.As shown in Figure 7, first radio frequency 106 is connected with the second electric capacity 1072 by first input end point 1074, second electric capacity 1072 is connected with the first inducer 1073 again, the other end of the first inducer 1073 is directly connected with lower electrode 104 by lower electrode input endpoint 1041 by the first exit point 1075, one end ground connection of the first electric capacity 1071, the other end is connected between the second electric capacity 1072 and the first radio-frequency power supply 106; Second radio-frequency power supply 108 is connected with the 4th electric capacity 1092 by the second input endpoint 1094,4th electric capacity 1092 is connected with the second inductance 1093, the other end of the second inducer 1093 is directly connected with lower electrode 104 by lower electrode input endpoint 1041 by the second exit point 1095, one end ground connection of the 3rd electric capacity 1091, the other end is connected between the 4th electric capacity 1092 and the second radio-frequency power supply 108.In the first embodiment shown in the lower electrode radio-frequency power supply group provided in the present embodiment and Fig. 5, the difference of lower electrode radio-frequency power supply group is, filter network is not comprised in lower electrode radio-frequency power supply group shown in Fig. 7, but by arranging the electric capacity in the first matching box 107 and the second matching box 109, the electrical parameter of inducer, make the first matching box 107 and the second matching box 109 realize the function of matching box and filter network simultaneously, guarantee that the radio frequency power that the first radio-frequency power supply and the second radio-frequency power supply export all can be transported on lower electrode completely, thus save the cost installing filter network.
In the present embodiment, first matching box and the second matching box are when realizing the mating of radio-frequency power supply and loaded impedance, equally also can realize the function of double frequency filter network, the radio frequency power of the different frequency that the first radio-frequency power supply and the second radio-frequency power supply are exported all can be transported on lower electrode completely, thus various rf frequency is input to the reaction chamber at lower electrode place by lower electrode, which not only improves the density of the plasma body in reaction chamber, and the distribution of plasma body can also be made more even, be conducive to the homogeneity improving plasma process wafer, thus meet the requirement of PVD art breading.
The present invention also provides a kind of PVD system, and the present embodiment PVD system comprises multiple reaction chamber for PVD technique, and the reaction chamber for PVD technique can adopt the structure in any one embodiment above-mentioned.In PVD system, the reaction chamber for PVD technique can be thallium deposition reaction chamber or copper deposition reaction chamber, thus can obtain evenly the plasma body of distribution in middle thallium deposition reaction chamber or copper deposition reaction chamber in PVD system.
In the present embodiment, by arranging the radio-frequency power supply of different frequency in lower electrode radio-frequency power supply group, make the radio frequency power of input different frequency in reaction chamber, thus be not only conducive to the density improving plasma body in reaction chamber, and the distribution of plasma body in reaction chamber can be made more even, be conducive to the homogeneity improving plasma process wafer, thus meet the requirement of PVD art breading.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (11)
1. the reaction chamber for PVD technique, comprise reaction chamber body, lower electrode and target, described target is arranged at the top of described reaction chamber body, described lower electrode is arranged at the intrinsic bottom of described reaction chamber, it is characterized in that, also comprise coil RF power supply, coil matching box, ICP coil and lower electrode radio-frequency power supply group, wherein:
The inwall that described ICP coil is fixed on reaction chamber body is connected with coil RF power supply by coil matching box;
Described lower electrode radio-frequency power supply group comprises at least two radio-frequency power supplies and at least two matching boxs, and described at least two radio-frequency power supplies and at least two matching box one_to_one corresponding;
Described lower electrode radio-frequency power supply group exports the radio frequency power of at least two kinds of different frequencies, to improve the homogeneity of plasma distribution to described lower electrode.
2. the reaction chamber for PVD technique according to claim 1, is characterized in that, described lower electrode radio-frequency power supply group comprises: the first radio-frequency power supply, the first matching box, the second radio-frequency power supply, the second matching box and filter network;
Described first radio-frequency power supply is connected with described filter network by the first matching box;
Described second radio-frequency power supply is connected with described filter network by the second matching box;
Described filter network is connected with described lower electrode.
3. the reaction chamber for PVD technique according to claim 2, is characterized in that,
Described first matching box comprises the first electric capacity, the second electric capacity and the first inducer;
Described first radio-frequency power supply, described second electric capacity, described first inducer and described filter network are sequentially connected in series, one end ground connection of described first electric capacity, and the other end is connected between described first radio-frequency power supply and described second electric capacity.
4. the reaction chamber for PVD technique according to claim 2, is characterized in that,
Described second matching box comprises the 3rd electric capacity, the 4th electric capacity and the second inducer;
Described second radio-frequency power supply, described 4th electric capacity, described second inducer and described filter network are sequentially connected in series, one end ground connection of described 3rd electric capacity, and the other end is connected between described second radio-frequency power supply and described 4th electric capacity.
5. the reaction chamber for PVD technique according to claim 2, is characterized in that, described filter network comprises: the first filtering electronic circuit and the second filtering electronic circuit, and described first filtering electronic circuit and the second filtering electronic circuit are arranged in parallel.
6. the reaction chamber for PVD technique according to claim 5, is characterized in that, described first filtering electronic circuit and the second filtering electronic circuit are passive filter circuit or active filter circuit.
7. the reaction chamber for PVD technique according to claim 1, is characterized in that, described lower electrode radio-frequency power supply group comprises: the first radio-frequency power supply, the first matching box, the second radio-frequency power supply and the second matching box;
Described first radio-frequency power supply is connected to described lower electrode by described first matching box;
Described second radio-frequency power supply is connected between described first matching box and described lower electrode by described second matching box.
8. the reaction chamber for PVD technique according to claim 7, is characterized in that,
Described first matching box comprises the first electric capacity, the second electric capacity and the first inducer;
Described first radio-frequency power supply, described second electric capacity, described first inducer and described lower electrode are connected successively, one end ground connection of described first electric capacity, and the other end is connected between described first radio-frequency power supply and described second electric capacity.
9. the reaction chamber for PVD technique according to claim 7, is characterized in that,
Described second matching box comprises the 3rd electric capacity, the 4th electric capacity and the second inducer;
Described second radio-frequency power supply, described 4th electric capacity, described second inducer are connected successively with described lower electrode, one end ground connection of described 3rd electric capacity, and the other end is connected between described second radio-frequency power supply and described 4th electric capacity.
10. a PVD system, is characterized in that, comprises the reaction chamber described in any one in multiple claim 1-9.
11. PVD systems according to claim 10, is characterized in that, described reaction chamber is thallium deposition reaction chamber or copper deposition reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010603748.2A CN102534524B (en) | 2010-12-14 | 2010-12-14 | Reaction chamber for PVD (Physical Vapor Deposition) process and PVD system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010603748.2A CN102534524B (en) | 2010-12-14 | 2010-12-14 | Reaction chamber for PVD (Physical Vapor Deposition) process and PVD system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102534524A CN102534524A (en) | 2012-07-04 |
| CN102534524B true CN102534524B (en) | 2015-04-15 |
Family
ID=46342524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010603748.2A Active CN102534524B (en) | 2010-12-14 | 2010-12-14 | Reaction chamber for PVD (Physical Vapor Deposition) process and PVD system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102534524B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104746026A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film deposition equipment |
| CN106686875B (en) * | 2015-11-06 | 2019-05-17 | 中微半导体设备(上海)股份有限公司 | A kind of device for inductively coupled plasma processing |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1950922A (en) * | 2005-02-03 | 2007-04-18 | 应用材料股份有限公司 | Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece |
| CN101221881A (en) * | 2007-01-12 | 2008-07-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching method and device |
| CN101740340A (en) * | 2008-11-25 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070246162A1 (en) * | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency |
-
2010
- 2010-12-14 CN CN201010603748.2A patent/CN102534524B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1950922A (en) * | 2005-02-03 | 2007-04-18 | 应用材料股份有限公司 | Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece |
| CN101221881A (en) * | 2007-01-12 | 2008-07-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Impedance matching method and device |
| CN101740340A (en) * | 2008-11-25 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102534524A (en) | 2012-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101104571B1 (en) | Inductive coupled plasma device | |
| CN103227091B (en) | Plasma processing apparatus | |
| EP1079671A2 (en) | Antenna device for generating inductively coupled plasma | |
| CN100567566C (en) | A kind of vacuum plasma reactor that is used for large area film growth | |
| CN104217914B (en) | Plasma processing apparatus | |
| KR101095602B1 (en) | Processing device and generating device for plasma | |
| KR20120004040A (en) | Plasma generating apparatus | |
| KR101626039B1 (en) | Consecutive substrate processing system using large-area plasma | |
| KR101200726B1 (en) | Plasma reactor having top and bottom multi divided electrode | |
| CN102534524B (en) | Reaction chamber for PVD (Physical Vapor Deposition) process and PVD system | |
| KR100864111B1 (en) | Inductively coupled plasma reactor | |
| KR101572100B1 (en) | Plasma reactor using multi-frequency | |
| KR20090033877A (en) | Inductive coupling coil and inductive coupling plasma apparatus thereof | |
| JP2012517663A (en) | Large area plasma processing equipment | |
| JP2002110649A (en) | Plasma treatment apparatus | |
| KR101585891B1 (en) | Compound plasma reactor | |
| KR101200743B1 (en) | Multi inductively coupled plasma reactor and method thereof | |
| KR101585890B1 (en) | Plasma reactor with vertical dual chamber | |
| KR101039232B1 (en) | High-density plasma generation apparatus | |
| KR20100016911A (en) | Plasma generation apparatus | |
| KR101013357B1 (en) | High power plasma generation apparatus | |
| KR102077512B1 (en) | A appratus for supplying the radiofrequency power by multi-channel | |
| US20210074514A1 (en) | Substrate treating apparatus | |
| KR101013729B1 (en) | Plasma reaction apparatus having corn type 3 dimensional helix inductive coil | |
| KR100433032B1 (en) | Photo-resister ashing system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015, M5 building, No. 1 Jiuxianqiao East Road, Beijing, Chaoyang District, two South Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |