CN102534524A - Reaction chamber for PVD (Physical Vapor Deposition) process and PVD system - Google Patents
Reaction chamber for PVD (Physical Vapor Deposition) process and PVD system Download PDFInfo
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- CN102534524A CN102534524A CN2010106037482A CN201010603748A CN102534524A CN 102534524 A CN102534524 A CN 102534524A CN 2010106037482 A CN2010106037482 A CN 2010106037482A CN 201010603748 A CN201010603748 A CN 201010603748A CN 102534524 A CN102534524 A CN 102534524A
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Abstract
The invention provides a reaction chamber for a PVD (Physical Vapor Deposition) process and a PVD system. The reaction chamber for the PVD process comprises a reaction chamber body, a lower electrode, a target and a lower electrode radio frequency power supply group, wherein the target is arranged on the top part of the reaction chamber body; the lower electrode is arranged on the bottom part in the reaction chamber body; the lower electrode radio frequency power supply group internally comprises at least two radio frequency power supplies and at least two matchers; the at least two radio frequency power supplies and the at least two matchers are in one-to-one correspondence; and the lower electrode radio frequency power supply group is used for outputting radio frequency power to the lower electrode. The two radio frequency power supplies with various frequencies in the lower electrode radio frequency power supply group are used for outputting radio frequency powers with different frequencies to the reaction chamber, so that not only is the density of plasmas increased, but also the distribution of the plasmas in the reaction chamber is more uniform, the uniformity of plasma processing wafers is favorably improved, and the requirement of PVD process is met.
Description
Technical field
The present invention relates to semi-conductor device technology field, particularly, relate to a kind of reaction chamber and PVD system of the PVD of being used for technology.
Background technology
Physical vapor deposition (Physical Vapor Deposition; PVD) system is widely used in the ME of current semiconductor products such as flat-panel monitor, and this technology that obtains plasma body through the ionization rare gas element is widely used in the PVD technology at present.
Fig. 1 is the existing structural representation that is used for the reaction chamber of PVD technology.As shown in Figure 1; The existing reaction chamber that is used for PVD technology generally includes reaction chamber body 101, coil radio-frequency power supply 102, coil adaptation 103, lower electrode 104, inductively coupled plasma (inductively coupled plasma; ICP) coil 105, first radio-frequency power supply 106 and first adaptation 107; Wherein, ICP coil 105 is fixed on the outer wall of reaction chamber and through coil adaptation 103 and is connected with coil radio-frequency power supply 102, is used for radio frequency power is imported in the reaction chamber; Place wafer to be processed on the lower electrode 104; Its lower end is connected with first radio-frequency power supply 106 through first adaptation 107; Be used for radio frequency power is inputed to lower electrode, make lower electrode produce the radio frequency self-bias n., thereby make rare gas element such as argon ionization to obtain plasma body.
But; At the existing reaction chamber that is used for PVD technology; Because the plasma body of the ICP coil excitation in the reaction chamber body 101 is perpendicular to the Gradient distribution that is distributed as on the direction of ICP coil plane; Be not uniform distribution, this makes the plasma body in the vertical direction skewness in the reaction chamber body 101.In addition, Fig. 2 is the existing vertical view that is used for the reaction chamber ICP coil of PVD technology.As shown in Figure 2; Owing to have the gap between the rf inputs of ICP coil 105 and the RF output end; It is not a complete circle; The plasma body skewness in the horizontal direction that this can make in the reaction chamber 101 causes the crystal column surface in the PVD technical process inhomogeneous, can not satisfy the requirement of art breading.
Summary of the invention
For addressing the above problem, the present invention provides a kind of reaction chamber and PVD system of the PVD of being used for technology, is used for solving the interior uneven problem of plasma distribution of reaction chamber that prior art is used for PVD technology.
For this reason; The present invention provides a kind of reaction chamber of the PVD of being used for technology, comprises reaction chamber body, lower electrode and target, and said target is arranged at the top of said reaction chamber body; Said lower electrode is arranged at the intrinsic bottom of said reaction chamber; Wherein, also comprise lower electrode radio-frequency power supply group, comprise at least two radio-frequency power supplies and at least two adaptations in the said lower electrode radio-frequency power supply group; And said at least two radio-frequency power supplies are corresponding one by one with at least two adaptations, and said lower electrode radio-frequency power supply group is used for to said lower electrode output radio frequency power.
Wherein, said lower electrode radio-frequency power supply group is to the radio frequency power of at least two kinds of different frequencies of said lower electrode output.
Wherein, said lower electrode radio-frequency power supply group comprises: first radio-frequency power supply, first adaptation, second radio-frequency power supply, second adaptation and filter network;
Said first radio-frequency power supply is connected with said filter network through first adaptation;
Said second radio-frequency power supply is connected with said filter network through second adaptation;
Said filter network is connected with said lower electrode.
Wherein, said first adaptation comprises first electric capacity, second electric capacity and first inducer;
Said first radio-frequency power supply, said second electric capacity, said first inducer and said filter network are connected in series successively, an end ground connection of said first electric capacity, and the other end is connected between said first radio-frequency power supply and said second electric capacity.
Wherein, said second adaptation comprises the 3rd electric capacity, the 4th electric capacity and second inducer;
Said second radio-frequency power supply, said the 4th electric capacity, said second inducer and said filter network are connected in series successively, an end ground connection of said the 3rd electric capacity, and the other end is connected between said second radio-frequency power supply and said the 4th electric capacity.
Wherein, described filter network comprises: the first filtering electronic circuit and the second filtering electronic circuit, and said first filtering electronic circuit and second filtering electronic circuit parallel connection setting.
Wherein, the said first filtering electronic circuit and the second filtering electronic circuit are passive filter circuit or active filter circuit.
Wherein, said lower electrode radio-frequency power supply group comprises: first radio-frequency power supply, first adaptation, second radio-frequency power supply and second adaptation;
Said first radio-frequency power supply is connected to said lower electrode through said first adaptation;
Said second radio-frequency power supply is connected between said first adaptation and the said lower electrode through said second adaptation.
Wherein, said first adaptation comprises first electric capacity, second electric capacity and first inducer;
Said first radio-frequency power supply, said second electric capacity, said first inducer and said lower electrode are connected successively, an end ground connection of said first electric capacity, and the other end is connected between said first radio-frequency power supply and said second electric capacity.
Wherein, said second adaptation comprises the 3rd electric capacity, the 4th electric capacity and second inducer; Said second radio-frequency power supply, said the 4th electric capacity, said second inducer are connected with said lower electrode successively, an end ground connection of said the 3rd electric capacity, and the other end is connected between said second radio-frequency power supply and said the 4th electric capacity.
The present invention also provides a kind of PVD system, comprises any described reaction chamber among a plurality of claim 1-10.
Wherein, said reaction chamber is thallium deposition reaction chamber or copper deposition reaction chamber.
The present invention has following beneficial effect:
Reaction chamber and the PVD system that is used for PVD technology provided by the invention; In reaction chamber, export different radio frequency powers frequently through the radio-frequency power supply of various frequencies in the lower electrode radio-frequency power supply group; Not only increased the density of plasma body; But also make the more even distribution of the plasma body in the reaction chamber, help improving the homogeneity of plasma process wafer, thereby satisfy the requirement of PVD art breading.
Description of drawings
Fig. 1 is the existing structural representation that is used for the reaction chamber of PVD technology;
Fig. 2 is the existing vertical view that is used for the reaction chamber ICP coil of PVD technology;
Fig. 3 is the structural representation that is used for reaction chamber first embodiment of PVD technology provided by the invention;
Fig. 4 is the structural representation that is used for reaction chamber second embodiment of PVD technology provided by the invention;
Fig. 5 is the structural representation that is used for the reaction chamber first embodiment lower electrode radio-frequency power supply group of PVD technology provided by the invention;
Fig. 6 is the structural representation that is used for reaction chamber second embodiment of PVD technology provided by the invention;
Fig. 7 is the structural representation that is used for the reaction chamber second embodiment lower electrode radio-frequency power supply group of PVD technology provided by the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, reaction chamber and the system to the PVD of being used for technology provided by the invention is described in detail below in conjunction with accompanying drawing.
Fig. 3 is the structural representation that is used for reaction chamber first embodiment of PVD technology provided by the invention.As shown in Figure 3; The reaction chamber that present embodiment is used for PVD technology comprises: reaction chamber body 101, target (not shown), coil radio-frequency power supply 102, coil adaptation 103, ICP coil 105, direct supply 1011, magnetron 1012, target 1013, lower electrode 104 and lower electrode radio-frequency power supply group; Target is arranged at the top of reaction chamber body; Lower electrode 104 is arranged at the bottom in the reaction chamber body 101; Lower electrode radio-frequency power supply group is connected with lower electrode 104, wherein, comprises 2 radio-frequency power supplies and corresponding adaptation thereof in the lower electrode radio-frequency power supply group at least; At least two radio-frequency power supplies are corresponding one by one with at least two adaptations, and lower electrode radio-frequency power supply group is to the radio frequency power of at least 2 kinds of different frequencies of lower electrode 104 outputs.In the present embodiment, lower electrode 104 can comprise electrostatic chuck (electrostatic chuck comprises dielectric ceramic layer and is embedded in the electrode layer in the dielectric ceramic layer) and pedestal, and electrostatic chuck is arranged on the pedestal; Particularly; Lower electrode radio-frequency power supply group can be exported the radio frequency power of at least 2 kinds of different frequencies through the radio frequency leading-in end of lower electrode 104 to lower electrode 104; This radio frequency leading-in end can be a radio frequency and introduces post; This radio frequency is introduced post and vertically is arranged in the subpanel (all not illustrating in the relevant drawings of present embodiment) of lower electrode device, and can make whole lower electrode 1 be installed in the subpanel through sheathed this radio frequency introducing post of pedestal, and wherein pedestal is introduced post for being electrically connected with radio frequency.
In the present embodiment; The reaction chamber that is used for PVD technology is exported the radio frequency power of different frequency to lower electrode through the radio-frequency power supply of the various frequencies of lower electrode radio-frequency power supply group; This can not only increase the density of the plasma body in the reaction chamber at lower electrode place; And can also make the more even distribution of the plasma body in the reaction chamber, help improving the homogeneity of plasma process wafer, thereby satisfy the requirement of art breading.
Fig. 4 is the structural representation that is used for reaction chamber second embodiment of PVD technology provided by the invention.As shown in Figure 4, the lower electrode radio-frequency power supply group that present embodiment is used for the reaction chamber of PVD technology comprises first radio-frequency power supply 106, first adaptation 107, second radio-frequency power supply 108, second adaptation 109 and filter network 110.Wherein, first radio-frequency power supply 106 is connected on the filter network 110 through first adaptation 107, and second radio-frequency power supply 108 is connected on the filter network 110 through second adaptation 109, and filter network 110 is connected with lower electrode 104.Wherein, The frequency to electrode 104 transmission is different respectively with second radio-frequency power supply 108 for first radio-frequency power supply 106; One is the low frequency radio frequency power supply; Another is the high-frequency radio frequency power supply, and for example, the rf frequency of the radio-frequency power supply in the lower electrode radio-frequency power supply group can be respectively 2MHz and 60MHz, 2MHz and 40MHz, 13.56MHz and 60MHz etc.The radio frequency power that sends when first radio-frequency power supply 106 and second radio-frequency power supply 108 transfers to 104 last times of lower electrode through said filter network 110; Said filter network 110 is used for preventing that the radio frequency power of first radio-frequency power supply, 106 outputs from arriving second adaptation 109 or second radio-frequency power supply 108, prevents that simultaneously the radio frequency power of second radio-frequency power supply, 108 outputs from arriving first adaptation 107 or first radio-frequency power supply 106.In reaction chamber, import the radio frequency power of different frequency through lower electrode 104, the density of the plasma body in not only can augmenting response chamber 101 also can make being evenly distributed of plasma body in the reaction chamber 101.Need to prove that the radio-frequency power supply in the lower electrode radio-frequency power supply group also can have more than 3 kinds or 3 kinds to the rf frequency of reaction chamber input.
In practical application, for the existing reaction chamber that is used for PVD technology, because the ICP coil is not a complete circle, so its plasma body that excites is uneven in the direction and the distribution on the horizontal direction of vertical ICP coil plane; And for the reaction chamber that is provided for PVD technology in the present embodiment; It is on the basis of ICP coil excitation plasma body, simultaneously lower electrode to be applied high frequency power; Because lower electrode can inspire uniform plasma body; Therefore not only can increase the density of plasma body, and improve the homogeneity of plasma distribution.For example; For the existing reaction chamber that is used for PVD technology; On its ICP coil, apply the radio frequency power of 1000W, and on its lower electrode, apply the radio frequency power of 200W, the plasma body that it is ρ 1 that rare gas element in the reaction chamber such as argon gas obtain actual needed density after by ionization; At this moment, the total radio frequency power to the reaction chamber indoor transmissions is 1200W; And the reaction chamber that is used for PVD technology that provides in the present embodiment; On its ICP coil, apply the radio frequency power of 500W; And on lower electrode, apply the radio frequency power of 500W, the density that can obtain equating equally is the plasma body of ρ 1, and this moment, the total radio frequency power to the reaction chamber indoor transmissions was 1000W; Can find out, adopt the reaction chamber of the PVD of being used for technology provided by the invention can reduce the energy expenditure of radio-frequency power supply.
Fig. 5 is the structural representation that is used for the reaction chamber first embodiment lower electrode radio-frequency power supply group of PVD technology provided by the invention.As shown in Figure 5, in the present embodiment, the frequency of first radio-frequency power supply 106 in the lower electrode radio-frequency power supply group is 2MHz, and the frequency of second radio-frequency power supply 108 is 40MHz; First adaptation 107 comprises first electric capacity 1071, second electric capacity 1072, first inducer 1073, first input end point 1074 and first exit point 1075; Wherein, The inductance of first inducer 1073 is 3 μ H; First electric capacity 1071 and second electric capacity 1072 are variable capacity, and all between 3000-5000pF, first radio-frequency power supply 106 is connected with second electric capacity 1072 through first input end point 1074 its capacitance range; The other end of second electric capacity 1072 is connected with first inducer 1073 again; The other end of first inducer 1073 is connected with filter network 110 through first exit point 1075, an end ground connection of first electric capacity 1071, and the other end is connected between second electric capacity 1072 and first radio-frequency power supply 106; Second adaptation 109 comprises the 3rd electric capacity 1091, the 4th electric capacity 1092, second inducer 1093, second input endpoint 1094 and second exit point 1095; Wherein, The inductance of second inducer 1093 is 0.5 μ H; The 3rd electric capacity 1091, the 4th electric capacity 1092 are variable capacity, and its capacitance range is all between 3000-5000pF.Second radio-frequency power supply 108 is connected with the 4th electric capacity 1092 through second input endpoint 1094; The other end of the 4th electric capacity 1092 is connected with second inductance 1093; Second inducer 1093 is connected with filter network 110 through second exit point 1095; One end ground connection of the 3rd electric capacity 1091, the other end are connected between the 4th electric capacity 1092 and second radio-frequency power supply 108; Filter network 110 comprises the first filtering electronic circuit and the second filtering electronic circuit; The first filtering electronic circuit and the second filtering electronic circuit can be passive filter circuit or active filter circuit; Filter network 110 is connected with lower electrode 104 through lower electrode input endpoint 1041; The first filtering electronic circuit comprises the 3rd inducer 1101 and the 5th electric capacity 1102, wherein, and an end ground connection of the 3rd inducer 1101; The other end is connected with an end of the 5th electric capacity 1102, and the other end of the 5th electric capacity 1102 is connected between first exit point 1075 of the lower electrode input endpoint 1041 and first adaptation 107; The second filtering electronic circuit comprises the 4th inducer 1103 and the 6th electric capacity 1104, the two the back one end ground connection that is connected in parallel, and the other end is connected between second exit point 1095 of lower electrode input endpoint 1041 and second adaptation 109 of lower electrode 104.
Fig. 6 is the structural representation that is used for reaction chamber second embodiment of PVD technology provided by the invention.As shown in Figure 6; In the present embodiment; First radio-frequency power supply 106 is connected with lower electrode 104 through first adaptation 107; Second radio-frequency power supply 108 is connected between first adaptation 107 and the lower electrode 104 through second adaptation 109, and first radio-frequency power supply 106 and second radio-frequency power supply 108 be ground connection respectively.Fig. 7 is the structural representation that is used for the reaction chamber second embodiment lower electrode radio-frequency power supply group of PVD technology provided by the invention.As shown in Figure 7; First radio frequency 106 is connected with second electric capacity 1072 through first input end point 1074; Second electric capacity 1072 is connected with first inducer 1073 again; The other end of first inducer 1073 directly is connected with lower electrode 104 through lower electrode input endpoint 1041 through first exit point 1075, an end ground connection of first electric capacity 1071, and the other end is connected between second electric capacity 1072 and first radio-frequency power supply 106; Second radio-frequency power supply 108 is connected with the 4th electric capacity 1092 through second input endpoint 1094; The 4th electric capacity 1092 is connected with second inductance 1093; The other end of second inducer 1093 directly is connected with lower electrode 104 through lower electrode input endpoint 1041 through second exit point 1095; One end ground connection of the 3rd electric capacity 1091, the other end are connected between the 4th electric capacity 1092 and second radio-frequency power supply 108.The difference of lower electrode radio-frequency power supply group is among lower electrode radio-frequency power supply group that provides in the present embodiment and first embodiment shown in Figure 5; Do not comprise filter network in the lower electrode radio-frequency power supply group shown in Figure 7; But through the electric capacity in first adaptation 107 and second adaptation 109, the electrical parameter of inducer are set; Make first adaptation 107 and second adaptation 109 realize the function of adaptation and filter network simultaneously; The radio frequency power of guaranteeing the output of first radio-frequency power supply and second radio-frequency power supply all can be transported on the lower electrode fully, thereby has saved the cost that filter network is installed.
In the present embodiment; First adaptation and second adaptation are when realizing the coupling of radio-frequency power supply and loaded impedance; Equally also can realize the function of double frequency filter network, the radio frequency power of the different frequency of first radio-frequency power supply and second radio-frequency power supply output all can be transported on the lower electrode fully, thereby various rf frequencies are input to the reaction chamber at lower electrode place through lower electrode; This has not only improved the density of the plasma body in the reaction chamber; And can also make the more even distribution of plasma body, help improving the homogeneity of plasma process wafer, thereby satisfy the requirement of PVD art breading.
The present invention also provides a kind of PVD system, and present embodiment PVD system comprises the reaction chamber of a plurality of PVD of being used for technologies, and the reaction chamber that is used for PVD technology can adopt the structure of above-mentioned any embodiment.In the PVD system, the reaction chamber that is used for PVD technology can be thallium deposition reaction chamber or copper deposition reaction chamber, thereby obtains more equally distributed plasma body in thallium deposition reaction chamber or the copper deposition reaction chamber in can be in the PVD system.
In the present embodiment; Through the radio-frequency power supply of different frequency is set in lower electrode radio-frequency power supply group; Make the radio frequency power of input different frequency in the reaction chamber, thereby not only help improving the density of reaction chamber ionic medium body, and can make the more even distribution of plasma body in reaction chamber; Help improving the homogeneity of plasma process wafer, thereby satisfy the requirement of PVD art breading.
It is understandable that above embodiment only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For the one of ordinary skilled in the art, under the situation that does not break away from spirit of the present invention and essence, can make various modification and improvement, these modification also are regarded as protection scope of the present invention with improving.
Claims (12)
1. reaction chamber that is used for PVD technology; Comprise reaction chamber body, lower electrode and target; Said target is arranged at the top of said reaction chamber body, and said lower electrode is arranged at the intrinsic bottom of said reaction chamber, it is characterized in that; Also comprise lower electrode radio-frequency power supply group; Comprise at least two radio-frequency power supplies and at least two adaptations in the said lower electrode radio-frequency power supply group, and said at least two radio-frequency power supplies are corresponding one by one with at least two adaptations, said lower electrode radio-frequency power supply group is used for to said lower electrode output radio frequency power.
2. the reaction chamber that is used for PVD technology according to claim 1 is characterized in that, said lower electrode radio-frequency power supply group is to the radio frequency power of at least two kinds of different frequencies of said lower electrode output.
3. the reaction chamber that is used for PVD technology according to claim 2 is characterized in that, said lower electrode radio-frequency power supply group comprises: first radio-frequency power supply, first adaptation, second radio-frequency power supply, second adaptation and filter network;
Said first radio-frequency power supply is connected with said filter network through first adaptation;
Said second radio-frequency power supply is connected with said filter network through second adaptation;
Said filter network is connected with said lower electrode.
4. the reaction chamber that is used for PVD technology according to claim 3 is characterized in that,
Said first adaptation comprises first electric capacity, second electric capacity and first inducer;
Said first radio-frequency power supply, said second electric capacity, said first inducer and said filter network are connected in series successively, an end ground connection of said first electric capacity, and the other end is connected between said first radio-frequency power supply and said second electric capacity.
5. the reaction chamber that is used for PVD technology according to claim 3 is characterized in that,
Said second adaptation comprises the 3rd electric capacity, the 4th electric capacity and second inducer;
Said second radio-frequency power supply, said the 4th electric capacity, said second inducer and said filter network are connected in series successively, an end ground connection of said the 3rd electric capacity, and the other end is connected between said second radio-frequency power supply and said the 4th electric capacity.
6. the reaction chamber that is used for PVD technology according to claim 3 is characterized in that, described filter network comprises: the first filtering electronic circuit and the second filtering electronic circuit, and said first filtering electronic circuit and second filtering electronic circuit parallel connection setting.
7. the reaction chamber that is used for PVD technology according to claim 6 is characterized in that, the said first filtering electronic circuit and the second filtering electronic circuit are passive filter circuit or active filter circuit.
8. the reaction chamber that is used for PVD technology according to claim 2 is characterized in that, said lower electrode radio-frequency power supply group comprises: first radio-frequency power supply, first adaptation, second radio-frequency power supply and second adaptation;
Said first radio-frequency power supply is connected to said lower electrode through said first adaptation;
Said second radio-frequency power supply is connected between said first adaptation and the said lower electrode through said second adaptation.
9. the reaction chamber that is used for PVD technology according to claim 8 is characterized in that,
Said first adaptation comprises first electric capacity, second electric capacity and first inducer;
Said first radio-frequency power supply, said second electric capacity, said first inducer and said lower electrode are connected successively, an end ground connection of said first electric capacity, and the other end is connected between said first radio-frequency power supply and said second electric capacity.
10. the reaction chamber that is used for PVD technology according to claim 8 is characterized in that,
Said second adaptation comprises the 3rd electric capacity, the 4th electric capacity and second inducer;
Said second radio-frequency power supply, said the 4th electric capacity, said second inducer are connected with said lower electrode successively, an end ground connection of said the 3rd electric capacity, and the other end is connected between said second radio-frequency power supply and said the 4th electric capacity.
11. a PVD system is characterized in that, comprises any described reaction chamber among a plurality of claim 1-10.
12. PVD according to claim 11 system is characterized in that said reaction chamber is thallium deposition reaction chamber or copper deposition reaction chamber.
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| CN104746026A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film deposition equipment |
| CN106686875A (en) * | 2015-11-06 | 2017-05-17 | 中微半导体设备(上海)有限公司 | Inductive coupling plasma processing apparatus |
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| CN106686875B (en) * | 2015-11-06 | 2019-05-17 | 中微半导体设备(上海)股份有限公司 | A kind of device for inductively coupled plasma processing |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015, M5 building, No. 1 Jiuxianqiao East Road, Beijing, Chaoyang District, two South Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |