KR101013357B1 - High power plasma generation apparatus - Google Patents

Abstract

The present invention provides a high power plasma generating apparatus. The apparatus includes a power supply unit for supplying electric power, a matching circuit unit connected in series with the power supply unit, a chamber unit for confining plasma, an induction coil unit disposed outside the chamber unit, an electrode unit disposed inside the chamber unit, and an induction coil unit or electrode unit It includes a variable element portion connected in series with. The induction coil part and the electrode part are connected in parallel to each other and connected to the matching circuit part, and the variable element part matches the parallel resonance frequencies of the induction coil part and the electrode part with the driving frequency of the power supply part.

Capacitively coupled plasma, Inductively coupled plasma, Resonance

Description

High Power Plasma Generator {HIGH POWER PLASMA GENERATION APPARATUS}

The present invention relates to a plasma generating apparatus, and more particularly to a high density plasma generating apparatus.

Plasma is widely used in manufacturing processes of semiconductors, plasma display panels (PDPs), liquid crystal displays (LCDs), solar cells, and the like. Typical plasma processes include dry etching, plasma enhanced chemical vapor deposition (PECVD), sputtering, ashing, and the like. Capacitive Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Helicon Plasma, Microwave Plasma and the like are used.

Plasma processes are known to be directly related to plasma parameters (electron density, electron temperature, ion flux, ion energy). In particular, it has been found that electron density is closely related to throughput. Accordingly, development of a plasma source having a high electron density has been actively performed. Representative high-density plasma sources include helicon plasma, helicon plasma, and electron cyclotron resonance plasma. This plasma source is known to generate high density plasma at low pressure. However, since all of these plasma sources must use a magnetic field, the process reproducibility cannot be controlled by the plasma instability. In addition, the device becomes expensive and huge, and the magnetic field can be transferred to the substrate, adversely affecting the uniformity of the process. Therefore, there is no active application in the industry.

On the other hand, ICP and CCP are commonly used. Both plasma sources are simple in structure and linearly controllable in the process. Due to the low plasma instability, it is relatively easy to secure process reliability and is widely used in the industry.

In the plasma using the RF power supply, the plasma generating efficiency is drastically reduced as the real resistance of the matching circuit portion and the plasma resistance become similar. In a multi-chip package (MCP), the substrate may have a through hole, and wiring between the stacked substrates may be performed by filling the through hole with a conductive material. In this case, the substrate may have a thickness of several tens of micrometers (μm), requiring a fast etching rate. Therefore, there is a need for the development of a high-density plasma source having a simple structure and a new structure capable of producing a fast etching rate.

The present invention has been made in an effort to provide a high power plasma generating apparatus generating high density plasma while minimizing heat loss of a matching circuit unit.

The high power plasma generating apparatus according to the present invention includes a power supply unit for supplying power, a matching circuit unit connected in series with the power supply unit, a chamber unit for confining plasma, an induction coil unit disposed outside the chamber unit, and an electrode disposed inside the chamber unit. And a variable element part connected in series with the induction coil part or the electrode part. The induction coil part and the electrode part may be connected in parallel to each other so as to be connected to the matching circuit part, and the variable element part may match a parallel resonance frequency of the induction coil part and the electrode part with a driving frequency of the power supply part.

In one embodiment of the present invention, the phase of the current flowing in the induction coil portion may be 180 degrees different from the phase of the current flowing in the electrode portion.

In one embodiment of the present invention, one end of the induction coil portion may be connected to the variable element portion, the other end of the induction coil portion may be grounded.

In one embodiment of the present invention, one end of the induction coil portion may be connected to the variable element portion, the other end of the induction coil portion may be connected to the matching circuit portion.

In one embodiment of the present invention, the variable element portion may include a variable capacitor.

In one embodiment of the present invention, the chamber portion includes a chamber body and a chamber top plate, the induction coil portion is disposed on the chamber top plate, the electrode portion is disposed below the chamber top plate, the chamber top plate is a dielectric Can be.

In one embodiment of the present invention, the chamber portion includes a chamber upper body, a chamber lower body, and a chamber top plate, wherein the chamber upper body is a dielectric, and the induction coil portion is disposed on an outer side of the chamber upper body, The electrode unit may be disposed below the chamber upper plate.

In one embodiment of the present invention, the chamber top plate may be a conductor.

In one embodiment of the present invention, the induction coil unit includes a first antenna, a second antenna, and a reactive variable capacitor, wherein the first antenna and the second antenna are connected in parallel to each other, the reactive variable capacitor May be connected in series with the first antenna.

In one embodiment of the present invention, the chamber portion includes a chamber upper body, a chamber lower body, and a chamber top plate, wherein the chamber upper body and the chamber top plate comprise a dielectric, and the first antenna is the chamber upper body. The second antenna may be disposed on an outer side of the chamber, and the second antenna may be disposed on the chamber upper plate, and the electrode unit may be disposed below the chamber upper plate.

In one embodiment of the present invention, the chamber portion includes a chamber body and a chamber top plate disposed on the chamber body, wherein the chamber body is a dielectric, the induction coil portion is disposed on the chamber top plate, and the electrode portion is It may be arranged adjacent to the inner wall of the chamber body.

In one embodiment of the present invention, further comprising a Faraday shield portion, wherein the chamber portion includes a chamber body and a chamber top plate disposed on the chamber body, the chamber top plate is a dielectric, the induction coil portion is It is disposed on the chamber top plate, the Faraday shield may be disposed between the induction coil portion and the chamber top plate.

In one embodiment of the present invention, the electrode portion may be disposed below the chamber upper plate.

In one embodiment of the invention, further comprising a transformer, one end of the primary coil of the transformer is connected to the matching circuit portion and the other end of the primary coil of the transformer is grounded, one end of the secondary coil of the transformer May be electrically connected to the induction coil part, and the other end of the secondary coil of the transformer may be electrically connected to the electrode part.

In one embodiment of the present invention, the chamber portion includes a chamber body and a chamber top plate disposed on the chamber body, wherein the chamber top plate is a dielectric, the induction coil portion is disposed on the chamber top plate, and the electrode portion is It may be disposed below the chamber top plate.

In one embodiment of the present invention, one end of the induction coil portion is connected to the primary coil of the transformer, the other end of the induction coil portion is connected to one end of the variable element portion, the other end of the variable element portion is to be grounded Can be.

The high power plasma generating apparatus according to the embodiments of the present invention may generate a high density plasma at low pressure by using mutual resonance of CCP and ICP. The plasma generator according to the present invention can be used as a plasma generator such as etching, deposition, sputtering. In particular, a plasma generator using high power may consume a lot of power in an impedance matching network. Therefore, the plasma generating apparatus according to the present invention can significantly reduce the power consumption of the matching circuit portion, thereby enabling stable plasma generation. Specifically, the plasma generating apparatus according to the present invention may use mutual parallel resonance of a capacitively coupled plasma (CCP) and an inductively coupled plasma (ICP). Accordingly, the CCP and the ICP resonate with each other so that a lot of current flows, and the current flowing in the matching circuit portion can be minimized. Therefore, the plasma generating apparatus according to the embodiment of the present invention may have high plasma generating efficiency. The ion energy applied to the electrode of the CCP due to the parallel resonance can be maximized.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art can easily implement the technical idea of the present invention.

1 is a conceptual diagram illustrating a high power plasma generating apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the high power plasma generator includes a power supply unit 150 for supplying power, a matching circuit unit 140 connected in series with the power supply unit 150, a chamber unit 100 for confining plasma, and the chamber unit. An induction coil unit 130 disposed outside the 100, an electrode unit 120 disposed inside the chamber 100, and the induction coil unit 130 or the electrode unit 120 connected in series. The variable element unit 160 is included. The induction coil unit 130 and the electrode unit 120 are connected in parallel to each other and to the matching circuit unit 140. The variable element unit 160 may match a resonance frequency of the induction coil unit 130 and the electrode unit 120 with a driving frequency of the power supply unit 150.

The power supply unit 150 may be a radio frequency (RF) power source. The radio frequency may range from several hundred KHz to several hundred MHz. The output impedance of the power supply unit 150 may be 50 ohms. The power of the power supply unit 150 may be several kilowatts (kW) to several hundred kilowatts (kW).

The matching circuit unit 140 may match the impedance of the load 10 and the power supply unit 140. That is, the matching circuit unit 140 may transmit the maximum power to the load 10 by removing the reflected wave reflected from the load 10. The load 10 may include the induction coil unit 130, the electrode unit 120, the variable element unit 160, and a plasma. The matching circuit unit 140 may include at least two variable elements. The matching circuit unit 140 may be variously modified without being limited to the above-described form. The matching circuit unit 140 may include two variable capacitors.

The interior of the chamber part 100 may be less than atmospheric pressure. Plasma may be generated inside the chamber part 100. The plasma may be generated by the induction coil unit 130 and the electrode unit 120. The chamber part 100 may include a gas inlet for supplying a process gas and a gas exhaust port for discharging the process gas. The gas exhaust port may be connected to a vacuum pump. The chamber part 100 may include a susceptor on which a substrate is placed. The susceptor may be connected to a direct current power source and / or an RF power source. The susceptor may comprise heating means and / or cooling means. The chamber unit 100 may be divided into a plasma chamber for generating a plasma and a process chamber for performing a process. The chamber part 100 may include a cylindrical chamber body 110 and a chamber top plate 112. The chamber top plate 112 may be a dielectric. The chamber body 110 may be a conductive material. The inner wall of the chamber body 120 may be coated with a dielectric. The chamber upper plate 112 may include a through hole 113 in the center thereof. The chamber top plate 112 and the chamber body 110 may form a chamber region. The chamber body 110 may be grounded.

The induction coil unit 130 may be energy applying means for generating an ICP. The induction coil unit 130 may include at least one antenna or coil. The current flowing through the antenna or coil can generate induced electromotive force. The induced electromotive force may generate a plasma. When the chamber top plate 112 is a dielectric material, the induced electromotive force may pass through the chamber top plate 112 to generate a plasma in the chamber region below the chamber top plate 112. The induction coil unit 130 may be a one turn antenna. One end of the induction coil unit 130 may be electrically connected to the variable element unit 160. The other end of the induction coil unit 130 may be grounded. The induction coil unit 130 may be cooled by a fluid. The induction coil unit 130 may be variously modified.

The electrode part 120 may be disposed in the chamber part 100. The electrode unit 120 may include a discharge plate. The discharge plate may be a conductor. A portion of the electrode portion 120 may be surrounded by a dielectric or grounded conductor. The surface of the electrode portion 120 may be coded with a dielectric. The electrode unit 120 may include a gas injection function. The electrode unit 120 may generate a CCP. The electrode unit 120 may receive the power of the power supply unit 150 through the through hole 113 of the chamber upper plate 112. When there is a conductor under the induction coil unit 130, the induced electromotive force by the induction coil unit 130 may be difficult to pass through the conductor. Therefore, when the electrode part 120 is disposed below the induction coil part 130, the radius of the induction coil part 130 is preferably larger than the radius of the electrode part 120.

The electrode unit 120 and the induction coil unit 130 may be connected in parallel with each other. Accordingly, the electrode unit 120 and the induction coil unit 130 may form a parallel resonance circuit. The variable element unit 160 may be connected in series with the induction coil unit 130 or the electrode unit 120 to change the resonance frequency of the parallel resonance circuit.

In a resonance condition in which the driving frequency of the power supply unit 150 coincides with the resonance frequency, the electrode unit 120 may form an efficient capacitively coupled plasma. When a resonance condition is satisfied in the parallel resonance circuit, the current flowing through the induction coil unit 130 and the electrode unit 120 may be a maximum value. The current flowing through the matching circuit unit 140 may be a minimum value. Accordingly, high density and high efficiency plasma may be generated and power consumed by the matching circuit 140 may be minimized. Therefore, cooling and stability problems of the matching circuit unit 140 may be improved.

The variable element unit 160 may include a variable capacitor. The variable capacitor may be a vacuum variable capacitor. The capacitance of the variable capacitor can change the resonance frequency. When the driving frequency is smaller than the resonance frequency in the parallel resonance circuit, the current may mainly flow through the induction coil unit 130. That is, the plasma may be formed in the ICP mode. On the other hand, when the driving frequency is greater than the resonance frequency, the current may mainly flow through the electrode portion 120. That is, the plasma may be formed in the CCP mode. When the driving frequency and the resonance frequency coincide with each other to satisfy the parallel condition, the magnitude of the current flowing through the induction coil unit 130 and the electrode unit 120 may be substantially the same, and the phase may be 180 degrees out of phase.

According to a modified embodiment of the present invention, one end of the induction coil unit 130 may be connected to the matching circuit unit 160, one end of the variable element unit 160 of the other end of the induction coil unit 130 Can be connected to. The other end of the variable element unit 160 may be grounded.

2A and 2B illustrate an example of computer simulation of the intensity and phase of current flowing through an induction coil part, an electrode part, and a matching circuit part according to the capacitance of the variable element part of the high power plasma generator of FIG. 1. In this case, however, the current supplied by the power supply unit 150 is fixed at 1 amp.

1, 2A and 2B, as the capacitance of the variable element unit 160 is changed, the magnitude and phase of the current flowing through the induction coil unit 130 and the electrode unit 120 may be changed. have. When the resonance condition is satisfied at the capacitance of 0.62 nF, the current flowing in the matching circuit unit 140 is 1 amp, and the current flowing in the induction coil unit 130 and the electrode unit 120 is about 100 amps. Can flow. The phase of the current flowing in the induction coil unit 130 and the electrode unit 120 may have a 180 degree difference.

3 is a diagram illustrating absorption power of plasma and absorption power of a matching circuit unit according to capacitance of the variable element unit of the high power plasma generator of FIG. 1.

1 and 3, the absorption power of the plasma under resonance conditions may be about 10 ⁶ times higher than the absorption power of the matching circuit unit 140. The absorption power of a typical RF plasma may be in the same order as the absorption power of the matching circuit portion. Therefore, according to the plasma generating apparatus according to an embodiment of the present invention, the power lost in the matching circuit unit 140 in the resonance conditions can be significantly reduced. In addition, in a resonance condition, a large amount of current flowing through the induction coil unit 130 and the electrode unit 120 may flow to generate a high density plasma.

 4 is a view for explaining a high-power plasma generating apparatus according to another embodiment of the present invention.

Referring to FIG. 4, the high power plasma generating apparatus includes a power supply unit 150 for supplying power, a matching circuit unit 140 connected in series with the power supply unit 150, a chamber unit 100 for confining plasma, and the chamber unit ( Induction coil unit 130 disposed outside the 100, the electrode portion 120 disposed inside the chamber portion 100, and the induction coil portion 130 or the electrode portion 120 is connected in series The variable element unit 160 is included. The induction coil unit 130 and the electrode unit 120 may be connected in parallel to each other and to the matching circuit unit 140. The variable element unit 160 may match a resonance frequency of the induction coil unit 130 and the electrode unit 120 with a driving frequency of the power supply unit 150.

The chamber unit 100 may include a chamber upper body 114, a chamber lower body 116, and a chamber upper plate 112 disposed on the chamber upper body 114. The chamber upper body 114 may be disposed on the chamber lower body 116. The chamber upper body 114 may have a cylindrical shape. The chamber upper body 114 may be a dielectric. The chamber lower body 116 may be a conductive material. The inner wall of the chamber lower body 116 may be coated with a dielectric. The chamber upper plate 112 may include a through hole 113 in the center thereof. The chamber top plate 112 may be a conductor. The chamber top plate 112, the chamber lower body 116, and the chamber upper body 114 may form a chamber region.

The induction coil unit 130 may be energy applying means for generating an ICP. The induction coil unit 130 may include at least one antenna or coil. The current flowing through the antenna or coil may generate induced electromotive force, and the induced electromotive force may generate plasma. The induction coil unit 130 may be disposed on an outer side surface of the chamber upper body 114. When the chamber upper body 114 is a dielectric, the induced electromotive force may pass through the chamber upper body to generate plasma in the chamber region. The induction coil unit 130 may be a one turn antenna. One end of the induction coil unit 130 may be electrically connected to the matching circuit unit 140 directly or indirectly. The other end of the induction coil unit 130 may be grounded. The induction coil unit 130 may be cooled by a fluid. The induction coil unit 130 may have various shapes. The chamber lower body 116 and the chamber upper plate 112 may be grounded.

The electrode 120 may be disposed inside the chamber 100. The chamber upper plate 112 may include a through hole 113 in the center thereof. The electrode unit 120 may be disposed under the chamber upper plate 112. The electrode unit 120 may be electrically connected to the power supply unit 150 through the through hole 113. The electrode unit 120 may include a discharge plate. Part of the discharge plate may be surrounded by a dielectric or a conductor. The surface of the discharge plate may be coded with a dielectric. The electrode unit 120 may include a gas injection function. The electrode unit 120 may generate a capacitively coupled plasma. In a resonance condition in which the driving frequency of the power supply unit 150 coincides with the resonance frequency, the electrode unit 120 may form an efficient capacitively coupled plasma.

5 is a view for explaining a plasma generating apparatus according to another embodiment of the present invention.

The chamber unit 100 may include a chamber upper body 114, a chamber lower body 116, and a chamber upper plate 112 disposed on the chamber upper body 114. The chamber upper body 114 may be disposed on the chamber lower body 116. The chamber upper body 114 may have a cylindrical shape. The chamber upper body 114 may be a dielectric. The chamber lower body 116 may be a conductive material. The inner wall of the chamber lower body 116 may be coated with a dielectric. The chamber upper plate 112 may include a through hole 113 in the center thereof. The chamber top plate 112 may be a dielectric. The chamber top plate 112, the chamber lower body 116, and the chamber upper body 114 may form a chamber region.

The induction coil unit 130 may be energy applying means for generating an ICP. The induction coil unit 130 may include a first antenna 132, a second antenna 134, and a reactive variable capacitor 170. The first antenna 132 and the reactive variable capacitor 170 may be connected in series and may be connected in parallel with the second antenna 134. The reactive variable capacitor 170 may control the current flowing through the first antenna 132 and the second antenna 134. The first antenna 132 may be disposed on an outer side surface of the chamber upper body 114. The second antenna 134 may be disposed on the chamber upper plate 112. The first antenna 132 and the second antenna 134 may each be a one-turn antenna. One end of the first antenna 132 and the second antenna 134 may be electrically connected directly or indirectly to a power supply, and the other ends of the first antenna 132 and the second antenna 134 may be grounded. Can be.

According to a modified embodiment of the present invention, the first antenna 132 may be disposed on the chamber top plate 112, and the second antenna 134 may be disposed outside the chamber upper body 114. Can be.

The electrode 120 may be disposed inside the chamber 100. The chamber upper plate 112 may include a through hole 113 in the center thereof. The electrode unit 120 may be disposed under the chamber upper plate 112. The electrode unit 120 may be electrically connected to the power supply unit 150 through the through hole 113. The electrode unit 120 may include a discharge plate. The radius of the second antenna 134 may be larger than the radius of the electrode 120. The electrode unit 120 and the induction coil unit 130 may be connected in parallel to form a parallel resonance circuit. By the variable element unit 160, the electrode unit 120 may form an efficient capacitively coupled plasma under a resonance condition in which a driving frequency of the power supply unit 150 coincides with a resonance frequency.

6 is a view for explaining a plasma generating apparatus according to another embodiment of the present invention.

The chamber part 100 may include a chamber body 110 and a chamber upper plate 112 disposed on the chamber upper body 110. The chamber body 110 may be a conductor. The chamber top plate 112 may be a dielectric plate. Through-holes 111 may be disposed on sidewalls of the chamber body 110.

The induction coil unit 130 may be energy applying means for generating an ICP. The induction coil unit 130 may be disposed on the chamber upper plate 112. The electrode part 120 may be disposed in the chamber part 100. The electrode unit 120 may be disposed on an inner side surface of the chamber body 110. The electrode unit 120 may be electrically connected to the power supply unit 150 through the through hole 111. The electrode 120 may have a cylindrical shape. The electrode unit 120 and the induction coil unit 130 may be connected in parallel to form a parallel resonance circuit. By the variable element unit 160, the electrode unit 120 may form an efficient capacitively coupled plasma under a resonance condition in which a driving frequency of the power supply unit 150 coincides with a resonance frequency.

7 is a view for explaining a plasma generating apparatus according to another embodiment of the present invention.

The chamber unit 100 may include a chamber body 110 and a chamber top plate 112 disposed on the chamber body 110. The chamber body 110 may be a conductor. The chamber top plate 112 may be a dielectric plate. The through hole 113 may be disposed at the center of the chamber upper plate 112.

The induction coil unit 130 may be energy applying means for generating an ICP. The induction coil unit 130 may be disposed on the chamber upper plate 112. The electrode 120 may be disposed inside the chamber 100. The electrode unit 120 may be disposed under the chamber upper plate 112. The electrode unit 120 may be electrically connected to the power supply unit 150 through the through hole 113. The electrode unit 120 may have a disc shape.

Faraday shield plate 180 may be disposed between the induction coil portion 130 and the chamber top plate (112). The Faraday shield plate 180 may reduce the plasma discharge in the electrostatic field on the induction coil unit 130. Induction electromotive force by the induction coil unit 130 may pass through the Faraday shield plate 180 to reach the inside of the chamber unit 100. The Faraday shield plate 180 may be formed to prevent an induction current from flowing by the induction coil unit 130. For example, the Faraday shield plate 180 may include a plurality of radial slits. The shape of the Faraday shield plate 180 may be variously modified. The Faraday shield plate 180 may be grounded or floated.

 The electrode unit 120 and the induction coil unit 130 may be connected in parallel to form a parallel resonance circuit. By the variable element unit 160, the electrode unit 120 may form an efficient capacitively coupled plasma under a resonance condition in which a driving frequency of the power supply unit 150 coincides with a resonance frequency.

8 is a view for explaining a plasma generating apparatus according to another embodiment of the present invention.

 The chamber unit 100 may include a chamber body 110 and a chamber top plate 112 disposed on the chamber body 110. The chamber body 110 may be a conductor. The chamber top plate 112 may be a dielectric plate. The through hole 113 may be disposed at the center of the chamber upper plate 112.

The induction coil unit 130 may be energy applying means for generating an ICP. The induction coil unit 130 may be disposed on the chamber upper plate 112. The electrode part 120 may be disposed in the chamber part 100. The electrode unit 120 may be disposed under the chamber upper plate 112. The electrode unit 120 may be electrically connected to the power supply unit 150 through the through hole 113. The electrode unit 120 may have a disc shape.

A transformer 190 may be disposed between the matching circuit unit 140, the induction coil unit 130, and the electrode unit 120. The transformer 190 may include a primary coil 192 and a secondary coil 194. One end of the primary coil 192 may be connected to the matching circuit unit 140. The other end of the primary coil 192 may be grounded. One end of the secondary coil 194 may be connected to one end of the induction coil unit 130. The other end of the secondary coil 130 may be connected to the electrode unit 120. One end of the variable element unit 130 may be connected to the other end of the induction coil unit 130, and the other end of the variable element unit 160 may be grounded. The turns ratio of the transformer may be variously modified. The transformer 190 may reduce the voltage applied to the induction coil unit 130. Accordingly, the electrostatic field caused by the induction coil unit 130 can be reduced. Reduction of the electrostatic field may improve the uniformity of the ICP formed in the induction coil unit 130.

 The electrode unit 120 and the induction coil unit 130 may be connected in parallel to form a parallel resonance circuit. By the variable element unit 160, the electrode unit 120 may form an efficient capacitively coupled plasma under a resonance condition in which a driving frequency of the power supply unit 150 coincides with a resonance frequency.

1 is a conceptual diagram illustrating a high power plasma generating apparatus according to an embodiment of the present invention.

2A and 2B illustrate the strength and phase of a current flowing in an induction coil unit, an electrode unit, and a matching circuit unit according to the capacitance of the variable element unit of the high power plasma generator of FIG. 1.

3 is a diagram illustrating absorption power of plasma and absorption power of a matching circuit unit according to capacitance of the variable element unit of the high power plasma generator of FIG. 1.

4 to 8 are diagrams illustrating a high power plasma generating apparatus according to embodiments of the present invention.

Claims (16)

A power supply unit supplying power; A matching circuit unit connected in series with the power supply unit; A chamber unit for confining the plasma; An induction coil part disposed outside the chamber part; An electrode part disposed inside the chamber part; And Including a variable element portion connected in series with the induction coil portion or the electrode portion, The induction coil part and the electrode part are connected in parallel to each other, and are connected to the matching circuit part. The variable element part matches the parallel resonance frequency of the induction coil part and the electrode part with the driving frequency of the power supply part. The chamber portion includes a chamber body and a chamber top plate, The electrode unit is disposed below the chamber upper plate, And a radius of the electrode portion is smaller than a radius of the induction coil portion. The method of claim 1, The phase of the current flowing in the induction coil portion is a high power plasma generator, characterized in that there is a 180 degree difference from the phase of the current flowing in the electrode portion. The method of claim 1, One end of the induction coil unit is connected to the variable element unit, and the other end of the induction coil unit is grounded high power plasma generating apparatus. The method of claim 1, One end of the induction coil unit is connected to the variable element unit, the other end of the induction coil unit is connected to the matching circuit unit. The method of claim 1, The variable element unit is a high power plasma generating apparatus comprising a variable capacitor. The method of claim 1, The induction coil portion is disposed on the chamber top plate, the electrode portion is disposed below the chamber top plate, the chamber top plate is a high power plasma generating apparatus characterized in that the dielectric. The method of claim 1, The chamber body includes a chamber upper body and a chamber lower body, The chamber upper body is a dielectric, the induction coil portion is disposed on the outer side of the chamber upper body, the electrode portion is a high power plasma generating device, characterized in that disposed below the chamber upper plate. The method of claim 7, wherein The chamber top plate is a high power plasma generating apparatus, characterized in that the conductor. A power supply unit supplying power; A matching circuit unit connected in series with the power supply unit; A chamber unit for confining the plasma; An induction coil part disposed outside the chamber part; An electrode part disposed inside the chamber part; And Including a variable element portion connected in series with the induction coil portion or the electrode portion, The induction coil part and the electrode part are connected in parallel to each other and connected to the matching circuit part, and the variable element part matches the parallel resonance frequency of the induction coil part and the electrode part with the driving frequency of the power supply part, The induction coil unit includes a first antenna, a second antenna, and a reactive variable capacitor, The first antenna and the second antenna are connected in parallel with each other, and the reactive variable capacitor is connected in series with the first antenna. The method of claim 9, The chamber portion includes a chamber upper body, a chamber lower body, and a chamber top plate, The chamber upper body and the chamber top plate comprise a dielectric, The first antenna is disposed on the outer side of the chamber upper body, the second antenna is disposed on the chamber top plate, And the electrode portion is disposed under the chamber upper plate. delete A power supply unit supplying power; A matching circuit unit connected in series with the power supply unit; A chamber unit for confining the plasma; An induction coil part disposed outside the chamber part; An electrode part disposed inside the chamber part; And Including a variable element portion connected in series with the induction coil portion or the electrode portion, The induction coil part and the electrode part are connected in parallel to each other and connected to the matching circuit part, and the variable element part matches the parallel resonance frequency of the induction coil part and the electrode part with the driving frequency of the power supply part, Further includes a Faraday shield, The chamber portion includes a chamber body and a chamber top plate disposed on the chamber body, wherein the chamber top is a dielectric, The induction coil portion is disposed on the chamber top plate, and the Faraday shield portion is disposed between the induction coil portion and the chamber top plate. delete A power supply unit supplying power; A matching circuit unit connected in series with the power supply unit; A chamber unit for confining the plasma; An induction coil part disposed outside the chamber part; An electrode part disposed inside the chamber part; And Including a variable element portion connected in series with the induction coil portion or the electrode portion, The induction coil part and the electrode part are connected in parallel to each other, and are connected to the matching circuit part. The variable element part matches the parallel resonance frequency of the induction coil part and the electrode part with the driving frequency of the power supply part. Include more transformers, One end of the primary coil of the transformer is connected to the matching circuit portion and the other end of the primary coil of the transformer is grounded,  And one end of the secondary coil of the transformer is electrically connected to the induction coil part, and the other end of the secondary coil of the transformer is electrically connected to the electrode part. The method of claim 14, The chamber part A chamber body and a chamber top disposed on the chamber body, wherein the chamber top is a dielectric; The induction coil portion is disposed on the chamber top plate, the electrode portion is characterized in that disposed under the chamber top plate. The method of claim 14, One end of the induction coil part is connected to the secondary coil of the transformer, the other end of the induction coil part is connected to one end of the variable element part, and the other end of the variable element part is grounded.

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