CN105586566A - Reaction cavity and semiconductor machining equipment - Google Patents
Reaction cavity and semiconductor machining equipment Download PDFInfo
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- CN105586566A CN105586566A CN201410608051.2A CN201410608051A CN105586566A CN 105586566 A CN105586566 A CN 105586566A CN 201410608051 A CN201410608051 A CN 201410608051A CN 105586566 A CN105586566 A CN 105586566A
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Abstract
The invention provides a reaction cavity and semiconductor machining equipment. The reaction cavity comprises a bearing device, a plasma generation device and a metal plate, wherein the bearing device used for bearing a substrate; the plasma generation device is used for stimulating gas in the reaction cavity to form plasma; the bearing device is arranged below the plasma generation device; the metal plate is transversely arranged between the bearing device and the plasma generation device and provided with a plurality of through holes penetrating through the metal plate in the thickness direction; the metal plate is electrically connected with a direct power source which is used for applying positive voltage to the metal plate so that irons above the metal plate can be prevented from dispersing towards the bearing device through the through holes. By means of the reaction cavity provided by the invention, the problem that hydrogen ions can easily enter Low-K materials and affect the performance of elements is solved, and therefore the process quality and the yield of chips are improved.
Description
Technical field
The invention belongs to semiconductor equipment and manufacture field, be specifically related to a kind of reaction chamber and halfConductor process equipment.
Background technology
Physical vapour deposition (PVD) (hereinafter to be referred as PVD) equipment is at IC, silicon through holeIn the application of the techniques such as TSV, encapsulation Packaging, generally include pre-cleaning cavity, forIn this chamber, substrate or workpiece are completed to prerinse technique, so-called prerinse technique basicPrinciple is that gas (for example, argon gas, helium and hydrogen etc.) is excited to formation plasma,Recycle this plasma and substrate or workpiece generation chemical reaction and/or physical bombardment, to goExcept the impurity of substrate or surface of the work.
Fig. 1 is the structural representation of existing pre-cleaning cavity. Refer to Fig. 1, this is clear in advanceWash chamber 10 and comprise the bogey 11 that is arranged on bottom, bogey 11 is for carryingSubstrate, and bogey 11 is by the first adaptation 12 and bottom electrode power supply 13 electricityConnect, for producing radio frequency from deviation on substrate, to attract ion to move towards substrate,Thereby accelerate the physical bombardment of ion pair substrate and the chemical reaction with substrate, thereby can carryHigh prerinse efficiency. In addition, the roof 15 of pre-cleaning cavity 10 is dome structure, at itOn roof 15, be provided with induction coil 14, this induction coil 14 is by the second adaptation 16Be electrically connected with top electrode power supply 17, in order to the gas that is positioned at pre-cleaning cavity 10 is excitedForm plasma.
But, adopt above-mentioned existing pre-cleaning cavity in actual applications inevitablyCan there is following technical problem: at semiconductor fabrication process by 55nm, 45nm micro extremelyThe following technology such as 32nm, 28nm for time, prerinse technique only needs hydroperoxyl radical and substrateOn groove or the oxide impurity in through hole react, still, the hydrogen in plasmaIon often easily enters in low-K dielectric (Low-k) material and reduces its k value, kValue refers to dielectric constant, thereby can be to the negative effect of Low-k material production, thereby can shadowRing the performance of the device of preparation.
Summary of the invention
The present invention is intended to solve the technical problem existing in prior art, and a kind of reaction is providedChamber and semiconductor processing equipment, thereby realize the table to substrate in realization by hydroperoxyl radicalFace carries out under prewashed prerequisite, can solve hydrogen ion and easily enter Low-K material to deviceThe problem that the performance of part impacts, thus processing quality and chip yield can be improved.
The invention provides a kind of reaction chamber, comprise bogey, plasma generating deviceAnd metallic plate, described bogey is for carrying substrates, and described plasma generating device is usedIn the gas in reaction chamber is excited to formation plasma, described bogey is arranged on instituteState the below of plasma generating device; Described metallic plate is horizontally installed on described bogeyAnd between described plasma generating device, and on described metallic plate, be provided with and run through that it is thickMultiple through holes of degree, the aperture of each described through hole is in preset range, in order to barrier metalThe ion of plate top spreads towards described bogey via described through hole.
Wherein, described metallic plate is electrically connected with described dc source, in order to described metallic plateApply positive voltage.
Wherein, in the sidewall outside of described reaction chamber, and be positioned at the top of described metallic plateAnd/or below be provided with magnet near the position of described metallic plate, and described magnet edgeThe circumferential setting of described reaction chamber.
Wherein, the preset range in the aperture of described through hole is at 0.2～10mm.
Wherein, the thickness range of described metallic plate is at 2～50mm.
The scope of the positive voltage that wherein, described dc source applies to described metallic plate exists5～50V。
Wherein, described magnet comprises permanent magnet or electromagnet.
Wherein, described plasma generating device is inductively coupled plasma generation device.
Wherein, the roof of described reaction chamber is dome structure, described inductive couple plasmaBody generation device comprises induction coil, and described induction coil is wrapped in the top of described dome structureThe outside of wall, and described metallic plate is arranged on the described roof lower end with dome structureBelow.
Wherein, described reaction chamber comprises upper cavity and lower chamber, and described upper cavity is stacked inOn the sidewall of described lower chamber, form described reaction chamber, described upper cavity is barrel-like structure,Described inductively coupled plasma generation device comprises induction coil, and described induction coil is wound aroundIn the sidewall outside of described upper cavity; And described metallic plate is arranged on described upper cavity lower endBelow.
Wherein, be equipped with Faraday shield bucket in the inner side of the sidewall of described upper cavity, described inOn Faraday shield bucket is axial along it, being provided with at least one cracks.
The present invention also provides a kind of semiconductor processing equipment, comprises reaction chamber, described reactionThe above-mentioned reaction chamber providing of the present invention is provided chamber.
Wherein, described semiconductor equipment comprises Pvd equipment, described reaction chamberComprise pre-cleaning cavity.
The present invention has following beneficial effect:
Reaction chamber provided by the invention, it is by filling at bogey and plasma generationBetween putting, be horizontally arranged with metallic plate, and on metallic plate, be provided with and run through the multiple of its thicknessThrough hole, metallic plate is electrically connected with dc source, in order to apply positive voltage to metallic plate, byThere is certain electric field in this metallic plate with positive voltage, can the row of realization in reaction chamberScold the ion of metallic plate top to spread towards bogey via through hole, and most hydrogen certainlyStill can be spread towards bogey via through hole by base, atom and molecule, thereby borrow in realizationHelp hydroperoxyl radical realize the surface of substrate is carried out under prewashed prerequisite, can solve hydrogen fromSon easily enters the problem that Low-K material impacts the performance of device, and then can carryHigh technology quality and chip yield.
Semiconductor processing equipment provided by the invention, it adopts reaction chamber provided by the inventionChamber, thereby realize prewashed prerequisite is carried out in the surface of substrate by hydroperoxyl radical in realizationUnder, can solve hydrogen ion and easily enter that Low-K material impacts the performance of deviceProblem, thus processing quality and chip yield can be improved.
Brief description of the drawings
Fig. 1 is the structural representation of existing pre-cleaning cavity;
The first structural representation of the reaction chamber that Fig. 2 provides for the embodiment of the present invention;
The second structural representation of the reaction chamber that Fig. 3 provides for the embodiment of the present invention; WithAnd
The third structural representation of the reaction chamber that Fig. 4 provides for the embodiment of the present invention.
Detailed description of the invention
For making those skilled in the art understand better technical scheme of the present invention, knot belowClosing accompanying drawing is described in detail reaction chamber provided by the invention and semiconductor processing equipment.
The first structural representation of the reaction chamber that Fig. 2 provides for the embodiment of the present invention. PleaseConsult Fig. 2, the reaction chamber 20 that the present embodiment provides comprises bogey 21 and plasmaBody generation device. Bogey 21 is for carrying substrates, and plasma generating device is used for willGas in reaction chamber 20 excites formation plasma, bogey 21 be arranged on etc. fromThe below of daughter generation device. Particularly, in the present embodiment, plasma generating deviceFor inductively coupled plasma generation device, this inductively coupled plasma generation device comprisesInduction coil 22, passes through adaptation 28 and top electrode power supply 23 electricity by induction coil 22Connect, in order to the gas in reaction chamber 20 is excited to formation plasma. Wherein, power onUtmost point power supply 23 comprises radio-frequency power supply, and its output frequency comprise 400kHz, 2MHz,13.56MHz, 40MHz, 60MHz or 100MHz etc.
Reaction chamber 20 also comprises metallic plate 24, and in the present embodiment, metallic plate 24 adoptsAluminum is made, and metallic plate 24 is horizontally installed on bogey 21 and plasma generation dressBetween putting, as shown in Figure 2, and on metallic plate 24, be provided with and run through the multiple logical of its thicknessHole 241, metallic plate 24 is electrically connected with dc source 25, in order to just to apply to metallic plate 24Voltage. Certain in the interior existence of reaction chamber 20 by this metallic plate 24 with positive voltageElectric field, can repel ion in the plasma of metallic plate top towards bogey 21Diffusion, and because hydroperoxyl radical, atom and molecule are not charged, therefore, this electric field can be not rightIt produces repulsive force, makes hydroperoxyl radical, atom and the molecule still can be via this through hole 241Towards substrate diffusion, thereby can realize most hydroperoxyl radical, atom and molecule and still canSpread towards bogey 21 via through hole 241, thereby realize by hydroperoxyl radical in realizationThe surface of substrate is carried out under prewashed prerequisite, can solve hydrogen ion and easily enterThe problem that Low-K material impacts the performance of device, and then can improve processing qualityWith chip yield.
The scope of the positive voltage that preferably, dc source 25 applies to metallic plate 24 exists5～50V。
Preferably, the aperture of each through hole 241 approaches or is less than with it corresponding plasma, in through hole 241, cannot there is plasma state in sheath layer size in the horizontal direction,Thereby the ion that repelled by metallic plate 24 of making to fail be difficult to by this through hole 241 towardsBogey 21 spreads, and can realize ion in barrier plasma via through hole 241Spread towards bogey 21, easily enter Low-K thereby can further solve hydrogen ionThe problem that material impacts the performance of device.
Further preferably, the aperture of each through hole 241 is at corresponding with it plasma sheathIn the scope that size is in the horizontal direction 2 times, can make plasma state at through hole 241Interior cannot existence, thereby the ion being repelled by metallic plate 24 that makes to fail is difficult to by thisThrough hole 241 spreads towards bogey 21. Further preferably, the aperture of through hole 241Preset range is at 0.2～10mm. In addition, preferably, the thickness range of metallic plate 24 exists2～50mm。
In the present embodiment, metallic plate 24 is disc-shaped structure, and through hole 241 is clear opening.But in actual applications, through hole 241 can be also reducing hole, for example, through hole 241For upper coarse and lower fine, lower thin and upper thick or thick up and down in the middle of thin through hole.
And the distribution density of through hole 241 becomes positive correlation with the height of process efficiency,Therefore, the distribution density of through hole 241 can be set the demand of process efficiency according to reality.Particularly, when if desired process efficiency is high, should increase the distribution density of through hole 241; IfWhile needing process efficiency low, should reduce the distribution density of through hole 241.
Whether the distribution density of through hole 241 evenly specifically establishes according to actual process resultsPut. For example,, if the process results in relative other regions, certain region of substrate shows this locationProcess efficiency higher than other regions, the distribution that should increase other region inner via holes 241 is closeSpend and/or reduce the distribution density of this region inner via hole 241, so that process results is even.
In addition preferably, in the sidewall outside of reaction chamber 20, and be positioned at metallic plate 24Above and below is also provided with magnet 26 near the position of metallic plate 24, and, magnetThe 26 circumferential settings along reaction chamber 20. By magnet 26 in reaction chamber 20 and lean onThe position of nearly metallic plate 24 forms the magnetic field of some strength, can realize ion and electronicsBe strapped in the region near metallic plate 24, and because hydroperoxyl radical, atom and molecule are not charged,Therefore this magnetic field can not produce binding force to it, and this makes hydroperoxyl radical, atom and molecule stillSo can spread towards substrate via this through hole 241, thereby realize by hydroperoxyl radical in factNow the surface of substrate is carried out under prewashed prerequisite, further blocks ions towardsBogey 21 spreads, and easily enters Low-K thereby can further solve hydrogen ionThe problem that material impacts the performance of device. In actual applications, also can be only insteadAnswer the sidewall outside of chamber 20, and be positioned at top or below the close gold of metallic plate 24The position that belongs to plate 24 is provided with magnet 26, equally can be in the interior generation one of reaction chamber 20Determine the magnetic field of intensity with constraint ion and electronics. Preferably, magnet 26 can be arranged on metalThe below of plate 24, in order to avoid the ion being repelled by metallic plate 24 that both failed, also fail byThrough hole 241 stops and the ion that arrives below metallic plate spreads towards substrate.
Be appreciated that the circumferential setting along reaction chamber 20 by magnet 26, can realizeIon and electronics in constraint reaction chamber 20 weeks zones of different upwards, thus can improveThe uniformity of technique. Particularly, magnet 26 can be circumferentially to arrange along reaction chamber 20Toroidal magnet, also can serve as reasons along the circumferential spaced multiple sub-magnet groups of reaction chamber 20Become. In the time that magnet 26 is made up of multiple sub-magnets, preferably, multiple sub-magnets are along reaction chamberThe circumferential interval of chamber 20 and evenly setting. In addition, magnet 26 comprises permanent magnet or electromagnet.
In the present embodiment, the roof 29 of reaction chamber 20 is dome structure, and adopts allAs pottery, quartzy insulating materials are made; Induction coil 22 is wrapped in the top of this dome structureThe outside of wall 29, in this case, metallic plate 24 is arranged on the top with dome structureThe below of wall 29 lower ends. Preferably, metallic plate 24 is arranged on the position near roof 29 lower endsPut place, metallic plate 24 is arranged on the below of contiguous plasma generating area, and this can makeObtain between metallic plate 24 and bogey 21 and there is enough spaces, to meet hydroperoxyl radicalCan evenly spread, thereby can improve the uniformity of technique. In other words, at metallic plate 24And the space between bogey 21 meets under the prerequisite that hydroperoxyl radical can evenly spread, willMetallic plate 24 is arranged on the position near roof 29 lower ends, can reduce reaction chamber 20Chamber size, thereby can reduce the cost of reaction chamber and reduce the occupation of land of reaction chamberArea, thus can increase economic efficiency.
Be appreciated that in the present embodiment, because charged ion is by metallic plate 24Uncharged hydroperoxyl radical, atom and molecule stop, so only can be arrived and be held by diffusionCarry device 21 surfaces, therefore, compared with prior art, can save and bogey 21Adaptation and the bottom electrode power supply of electrical connection, thus can reduce production costs, and then improveEconomic benefit.
In addition, in the present embodiment, bogey 21 comprises electrostatic chuck, adopts quietThe mode fixed substrate of electricity absorption, and, in electrostatic chuck, be provided with heater, useWith heated substrate, so that substrate reaches the required technological temperature of reaction, for example, technological temperatureScope at 100～500 DEG C, the scope of heat time is at 5～60s, this can improve substrate withThe reaction rate of hydroperoxyl radical, thus the efficiency of prerinse technique can be improved.
It should be noted that, in the present embodiment, plasma generating device is inductance coupling highPlasma generating device. But the present invention is not limited thereto, in actual applications,Plasma generating device also can adopt other plasma generating devices, for example, and direct currentDischarge plasma generation device, capacitance coupling plasma generation device, electron cyclotron are commonPlasma generating device or surface wave plasma generation device etc. shake.
Also it should be noted that, in the present embodiment, the roof 29 of reaction chamber 20 adoptsDome structure, induction coil 22 is wrapped in the outside of this roof 29. But the present invention alsoBe not limited to this, in actual applications, also can adopt reaction chamber as shown in Figure 3,Particularly, reaction chamber 20 comprises upper cavity 30 and lower chamber 40, and upper cavity 30 is stackedOn the sidewall of lower chamber 40, form reaction chamber 20, upper cavity 30 is barrel-like structure, senseAnswer coil 22 to be wrapped in the sidewall outside of upper cavity 30; Metallic plate 24 is arranged on upper cavityThe below of 30 lower ends. Be arranged on the position near roof 29 lower ends based on above-mentioned metallic plate 24Locate similar reason, preferably, metallic plate 24 is arranged near under upper cavity 30 lower endsSide. In addition, the sidewall of upper cavity 30 adopts such as the insulating materials such as ceramic, quartzy and makes,The roof of upper cavity 30 not only can adopt such as the metal material of aluminium and make, and can also adoptMake such as ceramic, quartzy etc. insulating materials.
Preferably, as shown in Figure 4, be equipped with farad in the inner side of upper cavity 30 madial wallsShielding bucket 27, is provided with at least one on Faraday shield bucket 27 is axial along it and cracks,This makes upwards not have conductive path, induction coil 22 in the week of Faraday shield bucketAlternating magnetic field in reaction chamber 20 interior generations can not produce sense on Faraday shield bucket 27Induced current. Particularly, Faraday shield bucket 27 can be fixed on the madial wall of upper cavity 30Upper, also can be by the inward flange of the stacked sidewall that is fixed on lower chamber 40 of suspended pattern.
Be appreciated that the reaction chamber 20 shown in Fig. 4 and the reaction chamber 20 shown in Fig. 3Compare, can be by Faraday shield bucket 27 dismounting being cleaned to realize to upper cavity30 clean, thereby not only can so that clean, but also can pass through multiple faradayShielding bucket 27 is realized and is cleaned in turn and use, and improves the utilization rate of reaction chamber.
In addition, it should be noted that, in actual applications, reaction chamber 20 can only be borrowedHelp the metallic plate that said structure is set between plasma generating device and bogey 2124, spread towards bogey 21 via through hole 241 to realize blocks ions. Certainly, anti-Answer chamber 20 that above-mentioned magnet 26 also can be only set on the basis with above-mentioned metallic plate 24Or be only electrically connected with dc source 25, with realize blocks ions via through hole 241 towards holdingCarrying device 21 spreads.
As another one technical scheme, the present invention also provides a kind of semiconductor processing equipment,Comprise reaction chamber, the reaction chamber that described reaction chamber the above embodiment of the present invention provides.
Particularly, the semiconductor processing equipment that the present embodiment provides comprises that physical vapour deposition (PVD) establishesStandby, reaction chamber comprises pre-cleaning cavity.
The semiconductor processing equipment that the present embodiment provides, it adopts anti-that above-described embodiment providesAnswer chamber, thereby realize and carry out prewashed to the surface of substrate by hydroperoxyl radical in realizationUnder prerequisite, can solve hydrogen ion and easily enter Low-K material the performance of device is caused to shadowThe problem of ringing, thus processing quality and chip yield can be improved.
Be understandable that, above embodiment be only used to illustrate principle of the present invention andThe illustrative embodiments adopting, but the present invention is not limited thereto. In this areaThose of ordinary skill, in the situation that not departing from principle of the present invention and essence, canTo make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (13)
1. a reaction chamber, comprises bogey and plasma generating device, described in holdCarry device for carrying substrates, described plasma generating device is for by reaction chamberGas excites formation plasma, and described bogey is arranged on described plasma generation dressThe below of putting; It is characterized in that, also comprise metallic plate, described metallic plate is horizontally installed on instituteState between bogey and described plasma generating device, and arrange on described metallic plateHave the multiple through holes that run through its thickness, and described metallic plate is electrically connected with dc source,In order to apply positive voltage to described metallic plate, with the ion that repels described metallic plate top towardsDescribed bogey diffusion.
2. reaction chamber according to claim 1, is characterized in that, each described logicalThe aperture in hole approaches or is less than corresponding with it plasma sheath chi in the horizontal directionVery little, spread towards described bogey via described through hole in order to blocks ions.
3. reaction chamber according to claim 1 and 2, is characterized in that, describedThe sidewall outside of reaction chamber, and be positioned at the top of described metallic plate and/or below and near instituteThe position of stating metallic plate is provided with magnet, and
Described magnet is along the circumferential setting of described reaction chamber.
4. reaction chamber according to claim 1, is characterized in that, described through holeThe preset range in aperture is at 0.2～10mm.
5. reaction chamber according to claim 1, is characterized in that, described metallic plateThickness range at 2～50mm.
6. reaction chamber according to claim 1, is characterized in that, described direct currentThe scope of the positive voltage that source applies to described metallic plate is at 5～50V.
7. reaction chamber according to claim 3, is characterized in that, described magnet packDraw together permanent magnet or electromagnet.
8. reaction chamber according to claim 1, is characterized in that, described plasmaBody generation device is inductively coupled plasma generation device.
9. reaction chamber according to claim 8, is characterized in that, described reaction chamberThe roof of chamber is dome structure, and described inductively coupled plasma generation device comprises the line of inductionCircle, described induction coil is wrapped in the outside of the roof of described dome structure, and
Described metallic plate is arranged on the below of the described roof lower end with dome structure.
10. reaction chamber according to claim 8, is characterized in that, described reactionChamber comprises upper cavity and lower chamber, and described upper cavity is stacked on the sidewall of described lower chamberForm described reaction chamber, described upper cavity is barrel-like structure, described inductive couple plasmaBody generation device comprises induction coil, and described induction coil is wrapped in the sidewall of described upper cavityOutside; And
Described metallic plate is arranged on the below of described upper cavity lower end.
11. reaction chambers according to claim 10, is characterized in that, on describedThe inner side of the sidewall of cavity is equipped with Faraday shield bucket, and described Faraday shield bucket is along its axleUpwards being provided with at least one cracks.
12. 1 kinds of semiconductor processing equipments, comprise reaction chamber, it is characterized in that, described inReaction chamber adopts the reaction chamber described in claim 1-11 any one.
13. semiconductor processing equipments according to claim 12, is characterized in that, instituteState semiconductor equipment and comprise Pvd equipment, described reaction chamber comprises prerinse chamberChamber.
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| CN201410608051.2A CN105586566B (en) | 2014-11-03 | 2014-11-03 | A kind of reaction chamber and semiconductor processing equipment |
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| CN201410608051.2A CN105586566B (en) | 2014-11-03 | 2014-11-03 | A kind of reaction chamber and semiconductor processing equipment |
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| CN105586566B CN105586566B (en) | 2018-05-25 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109390197A (en) * | 2017-08-08 | 2019-02-26 | 北京北方华创微电子装备有限公司 | Pre-cleaning cavity and semiconductor processing equipment |
| CN107346755B (en) * | 2017-06-29 | 2019-10-01 | 华进半导体封装先导技术研发中心有限公司 | Thin wafer cleaning device and cleaning method of the wafer scale with TSV through hole |
| CN110629200A (en) * | 2019-09-20 | 2019-12-31 | 理想晶延半导体设备（上海）有限公司 | Semiconductor processing equipment |
| CN115613140A (en) * | 2022-12-16 | 2023-01-17 | 江苏邑文微电子科技有限公司 | Transverse plasma generating chamber and multifunctional high-temperature reaction device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1451175A (en) * | 2000-09-01 | 2003-10-22 | 信越化学工业株式会社 | Magnetic field generator for magnetron plasma and plasma etching apparatus and method comprising the magnetic field generator |
| CN101785088A (en) * | 2007-08-08 | 2010-07-21 | 株式会社爱发科 | Plasma processing method and plasma processing apparatus |
| CN103748658A (en) * | 2011-07-20 | 2014-04-23 | 朗姆研究公司 | Atomic layer etching using metastables formed from an inert gas |
-
2014
- 2014-11-03 CN CN201410608051.2A patent/CN105586566B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1451175A (en) * | 2000-09-01 | 2003-10-22 | 信越化学工业株式会社 | Magnetic field generator for magnetron plasma and plasma etching apparatus and method comprising the magnetic field generator |
| CN101785088A (en) * | 2007-08-08 | 2010-07-21 | 株式会社爱发科 | Plasma processing method and plasma processing apparatus |
| CN103748658A (en) * | 2011-07-20 | 2014-04-23 | 朗姆研究公司 | Atomic layer etching using metastables formed from an inert gas |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107346755B (en) * | 2017-06-29 | 2019-10-01 | 华进半导体封装先导技术研发中心有限公司 | Thin wafer cleaning device and cleaning method of the wafer scale with TSV through hole |
| CN109390197A (en) * | 2017-08-08 | 2019-02-26 | 北京北方华创微电子装备有限公司 | Pre-cleaning cavity and semiconductor processing equipment |
| CN110629200A (en) * | 2019-09-20 | 2019-12-31 | 理想晶延半导体设备（上海）有限公司 | Semiconductor processing equipment |
| CN115613140A (en) * | 2022-12-16 | 2023-01-17 | 江苏邑文微电子科技有限公司 | Transverse plasma generating chamber and multifunctional high-temperature reaction device |
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