CN1862393B - Downstream plasma processing apparatus and method - Google Patents
Downstream plasma processing apparatus and method Download PDFInfo
- Publication number
- CN1862393B CN1862393B CN2006100762320A CN200610076232A CN1862393B CN 1862393 B CN1862393 B CN 1862393B CN 2006100762320 A CN2006100762320 A CN 2006100762320A CN 200610076232 A CN200610076232 A CN 200610076232A CN 1862393 B CN1862393 B CN 1862393B
- Authority
- CN
- China
- Prior art keywords
- plasma
- chuck
- substrate
- process chamber
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The related downstream plasma treatment method comprises: using the plasma to remove photoresist on base, and electric connecting the chuck with ground wire. This invention is benefit to reduce base damage led by ion bombardment to the minimal.
Description
Technical field
The present invention relates to semiconductor manufacturing facility, specifically, relate to a kind of downstream plasma processing apparatus and method of utilizing plasma to remove photoresist from substrate.
Background technology
Usually, photoetching process is a kind of semiconductor fabrication process, comprise: in substrate, apply photoresist, this photoresist optionally exposes, photoresist to exposure develops to form the photoresist pattern, etching is by the base part of photoresist pattern covers, and carries out podzolic process to peel off the photoresist pattern that is used as mask in etching process.
Podzolic process is such process, and it can remove the photoresist that hardens owing to the reaction between the employed etching gas in photoresist pattern and the etching process effectively.In podzolic process, using capacitance coupling plasma (CCP) equipment, inductively coupled plasma (ICP) equipment of single wafer type and the plasma apparatus that has utilized lot type circular tunnel electrode widely.Such apparatus for processing plasma has radio frequency (RF) electrode that is connected with process chamber.When RF electrode supply frequency is approximately the RF power of 13.56MHz, can produce for example O
2Or CF
4Deng the group of handling gas.That is to say that by the group of plasma at the inner directly generation of process chamber processing gas, and this group is used to remove photoresist and polymer residues from substrate.But in this case, stronger relatively plasma is known from experience the damage that causes substrate and process chamber owing to the ion bombardment.An exemplary of this damage is, when manufacturing had the conductive layer that copper (Cu) forms and the insulation course that uses low-k as the semiconductor devices of middle layer insulation course, the specific inductive capacity of insulation course can increase.If increase owing to plasma damage causes the specific inductive capacity of insulation course, then RC postpones to increase, and has therefore reduced the performance of semiconductor devices.
Recently, researched and developed the technology of utilizing remote plasma.In order to prevent owing to causing the damage at the semiconductor-based end at the inner plasma that directly produces of process chamber, utilize the described technology of remote plasma to produce the group of handling gas in advance from group generator (remote plasma source just), the group that to handle gas then is injected in the process chamber, and described group generator is arranged to the distance predetermined with process chamber apart.But in this remote plasma equipment, when producing plasma by flowing downward in described chamber, the chuck of electrical isolation produces floating potential (Vf) in plasma.Floating potential (Vf) less than plasma potential (Vp) has repulsive force to the electronics that exists in the plasma around the chuck, but attractive to being injected into intrabasement ion, thereby these ions are attracted to chuck.Therefore, ion energy increases, and the damage that substrate is subjected to increases relatively.So because the electric potential difference (Vp-Vf) between chuck and the plasma, substrate is subjected to the ion bombardment and damages.
Summary of the invention
The invention provides a kind of downstream plasma processing apparatus, it can prevent that wafer is owing to the ion bombardment is damaged.
The present invention also provides a kind of downstream plasma processing apparatus, and it can be by chuck is made electrical ground because the substrate damage that the ion bombardment is caused minimizes, and this ion bombardment is what to be caused by the electric potential difference between chuck and the plasma.
Embodiment of the present invention provide a kind of downstream plasma processing apparatus, and it comprises: remote plasma source is used to base treatment to produce plasma; Process chamber is supplied to this process chamber from the plasma of remote plasma source; And the ground wire that is connected with chuck.
In other embodiments, chuck is the well heater chuck, be used for substrate is heated to high temperature, and chuck is formed by the conductor with high thermal conductivity.
Other embodiment of the present invention provides the downstream plasma disposal route, and it comprises: from chuck with charge discharge, thereby reduce ion energy in the plasma in the substrate be injected on the chuck.
Some embodiments more of the present invention provide the downstream plasma disposal route, and it comprises: substrate is loaded on the chuck of process chamber; Produce plasma from remote plasma source; Thereby the described substrate in being placed in described process chamber is supplied with described plasma and is carried out podzolic process, simultaneously, thereby makes the charge discharge that is accumulated in the described chuck reduce ion energy in the plasma that is injected in the substrate that is placed on the described chuck; Wherein, make the charge discharge that is accumulated in the described chuck reduce electric potential difference between described chuck and the described plasma thereby charge discharge is referred to by ground wire, thereby so that the ion energy that is injected in the described substrate is reduced the damage that weakens described substrate.
In other embodiments, chuck is the well heater chuck, is used for substrate is heated to high temperature.
Description of drawings
Accompanying drawing is used for further understanding the present invention, and constitutes the application's a part, and accompanying drawing has shown embodiment of the present invention, and they and instructions one are used from explains principle of the present invention.In the accompanying drawing:
Fig. 1 is the view of the downstream plasma processing apparatus of the preferred embodiment of the invention;
Fig. 2 is the process flow diagram of the downstream plasma disposal route of the preferred embodiment of the invention.
Embodiment
Below, the downstream plasma processing apparatus that present invention will be described in detail with reference to the accompanying.
The present invention can adopt different ways to implement, and is not limited thereto the embodiment that the place proposes; Exactly, it is of the present invention open more comprehensively with complete in order to make that these embodiments are provided, and theory of the present invention is conveyed to those skilled in the art fully.The present invention can also comprise the various parts of not describing herein.In whole instructions, identical Reference numeral is represented components identical.
Fig. 1 is the view of the downstream plasma processing apparatus of the preferred embodiment of the invention, and Fig. 2 is the process flow diagram of the downstream plasma disposal route of the preferred embodiment of the invention.
See figures.1.and.2, downstream plasma processing apparatus 100 of the present invention is a kind of semiconductor processing equipments, and the plasma (group) that it utilizes remote plasma source 170 to be produced carries out podzolic process on the surface at the semiconductor-based end.
Downstream plasma processing apparatus 100 has process chamber 110 so that sealing atmosphere to be provided.Well heater chuck 120 is arranged in the process chamber 110, to support the bottom surface of the wafer W of being carried by mechanical arm when door is opened.Well heater chuck and process chamber electrical isolation.The heater coil 124 of well heater is arranged in the well heater chuck 120, keeping suitable temperature, thereby makes photoresist to remove from substrate.Although do not show that well heater chuck 120 can comprise the lifting assembly with elevating lever, lifter and cylinder.Drive elevating lever up and down with loading or unloading substrate, and vertically drive lifter to drive elevating lever.Cylinder produces the vertical power of lifter.Preferably, the main body 122 of well heater chuck 120 can be formed by the aluminium with good heat-conductivity.
Ground wire 130 is connected to well heater chuck 120.In the electric potential difference that in podzolic process, has produced with respect to plasma, by the charge discharge of ground wire 130 with existence in the well heater chuck 120.Therefore, can reduce electric potential difference.The substrate damage that causes owing to the ion energy that exists in the plasma that is injected in the substrate that can make electrical ground of well heater chuck 120 minimizes.
In the bottom of process chamber 110, form the vacuum draw mouth 116 that is connected with the vacuum pump (not shown).Utilize vacuum draw mouth 116, process chamber 110 is evacuated.
On the top of process chamber 110, the upper chambers 140 that is connected with remote plasma source 170 is set.Upper chambers 140 is radial, and wherein its top is narrow and the bottom is wide.Place, upper and lower difference inlet porting 142 and gas distribution plate (GDP) 144 in upper chambers 140.Supply with plasma (reacting gas of activation) via inlet 142 from remote plasma source 170.Gas distribution plate 144 is by allowing the aluminum surface oxidation form, and has a plurality of filling orifices 146 that form at interval according to rule round the circumference of central ring, with even supply plasma.
Below with reference to Fig. 1 and Fig. 2 method of plasma processing of the present invention is described.At first, substrate is loaded on the chuck of process chamber (S12).The plasma that remote plasma source 170 is produced via the inlet 142 of upper chambers 140 is incorporated in the process chamber 110, make then its filling orifice 146 via gas distribution plate 144 flow downward to equably substrate (S14, S16).Subsequently, in substrate, carry out podzolic process (S18).
When owing to describedly flow downward behavior and when in process chamber, forming plasmoid, settling the well heater chuck of substrate in plasma, to produce floating potential (Vf) above.This floating potential provides repulsive force to the electronics that exists in the plasma around the well heater chuck, but provides attractive force to ion, makes these ions be attracted to chuck.Therefore, this is to make to be injected into the principal element that intrabasement ion energy increases.But according to the present invention, the well heater chuck electrical ground, therefore can reduce electric potential difference (Vf-Vp) by ground wire.The electric potential difference that causes owing to ground connection reduces to make that being injected into intrabasement ion energy reduces, and has therefore reduced the damage that substrate is subjected to.
As mentioned above, semiconductor incineration equipment of the present invention can be by allowing the well heater chuck reduce the damage that substrate is subjected to electrical ground and obviously.
Those skilled in the art will appreciate that and to make various improvement and change in the present invention.Therefore, the present invention ought to cover improvement and the change in the scope that drops into claims and equivalent thereof.
Claims (1)
1. downstream plasma disposal route comprises:
Substrate is loaded on the chuck of process chamber;
Produce plasma from remote plasma source;
Thereby the described substrate in being placed in described process chamber is supplied with described plasma and is carried out podzolic process, simultaneously, thereby makes the charge discharge that is accumulated in the described chuck reduce ion energy in the plasma that is injected in the substrate that is placed on the described chuck;
Wherein, make the charge discharge that is accumulated in the described chuck reduce electric potential difference between described chuck and the described plasma thereby charge discharge is referred to by ground wire, thereby so that the ion energy that is injected in the described substrate is reduced the damage that weakens described substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050038711 | 2005-05-10 | ||
| KR1020050038711A KR100725721B1 (en) | 2005-05-10 | 2005-05-10 | Method for treating plasma with down stream type |
| KR10-2005-0038711 | 2005-05-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1862393A CN1862393A (en) | 2006-11-15 |
| CN1862393B true CN1862393B (en) | 2010-08-18 |
Family
ID=37389849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100762320A Expired - Fee Related CN1862393B (en) | 2005-05-10 | 2006-04-19 | Downstream plasma processing apparatus and method |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100725721B1 (en) |
| CN (1) | CN1862393B (en) |
| TW (1) | TWI298518B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100857541B1 (en) * | 2007-07-04 | 2008-09-08 | 주식회사 테라텍 | Batch type ashing apparatus using remote radical generator |
| US10225919B2 (en) * | 2011-06-30 | 2019-03-05 | Aes Global Holdings, Pte. Ltd | Projected plasma source |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100767762B1 (en) | 2000-01-18 | 2007-10-17 | 에이에스엠 저펜 가부시기가이샤 | A CVD semiconductor-processing device provided with a remote plasma source for self cleaning |
| KR100704591B1 (en) * | 2000-03-21 | 2007-04-09 | 주성엔지니어링(주) | Apparatus for CVD and inner cleaning method thereof |
| KR100384789B1 (en) * | 2000-10-16 | 2003-05-22 | 주식회사 하이닉스반도체 | A Plasma Etching apparatus for fabricating semiconductor |
| JP4121269B2 (en) | 2001-11-27 | 2008-07-23 | 日本エー・エス・エム株式会社 | Plasma CVD apparatus and method for performing self-cleaning |
-
2005
- 2005-05-10 KR KR1020050038711A patent/KR100725721B1/en not_active IP Right Cessation
-
2006
- 2006-04-19 CN CN2006100762320A patent/CN1862393B/en not_active Expired - Fee Related
- 2006-05-02 TW TW095115539A patent/TWI298518B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060116433A (en) | 2006-11-15 |
| TW200701362A (en) | 2007-01-01 |
| KR100725721B1 (en) | 2007-06-08 |
| CN1862393A (en) | 2006-11-15 |
| TWI298518B (en) | 2008-07-01 |
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Granted publication date: 20100818 Termination date: 20150419 |
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