CN100375244C - Plasma treatment device and plasma treatment method - Google Patents
Plasma treatment device and plasma treatment method Download PDFInfo
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- CN100375244C CN100375244C CNB028046854A CN02804685A CN100375244C CN 100375244 C CN100375244 C CN 100375244C CN B028046854 A CNB028046854 A CN B028046854A CN 02804685 A CN02804685 A CN 02804685A CN 100375244 C CN100375244 C CN 100375244C
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- 238000000034 method Methods 0.000 title claims description 28
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- 239000007789 gas Substances 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 58
- 230000006698 induction Effects 0.000 claims description 34
- 238000009616 inductively coupled plasma Methods 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 22
- 239000012212 insulator Substances 0.000 claims description 16
- 230000004308 accommodation Effects 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
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- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 abstract description 4
- 210000002381 plasma Anatomy 0.000 abstract 9
- 238000003672 processing method Methods 0.000 abstract 2
- 230000005672 electromagnetic field Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 44
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 28
- 238000005755 formation reaction Methods 0.000 description 20
- 239000010802 sludge Substances 0.000 description 19
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- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
An object of the present invention is to provide a plasma processing system and a plasma processing method which use inductive coupled plasmas but do not cause disadvantages due to slant electric fields immediately after plasmas have been ignited. Another object of the present invention is to provide a plasma processing system and a plasma processing method which use inductive coupled plasmas and include a Faraday shield to thereby remove slant magnetic fields so as to ensure the ignition of plasmas. The plasma processing system comprises a chamber 31, a bell jar 32, a coil 42 disposed on the outside of the belljar 32, a Faraday shield 44 disposed between the belljar 32 and the coil 42, a susceptor 33, a conducting member 49 disposed upper of the belljar 32, a first high-frequency electric power source for the coil 42 to generate induced electromagnetic fields, and a second high-frequency electric power source 34 for generating electric fields between the susceptor 33 and the conducting member 49.
Description
Technical field
The present invention relates to a kind of plasma processing apparatus and method of plasma processing.
Background technology
In semiconductor manufacturing process, utilize plasma processing apparatus, use plasma to come to implementing predetermined process as the semiconductor wafer of handled object (below abbreviate wafer as).
As this plasma processing apparatus, the processing unit that utilizes inductively coupled plasma (ICP:Inductive Coupled Plasma) and the processing unit of capacitance coupling plasma (CCP:Capacitive Coupled Plasma) are for example arranged.Wherein, in the inductively coupled plasma, plasma density is than the height of capacitance coupling plasma, and bias voltage is 10-20V, and is lower than the 100-200V under the capacitance coupling plasma situation, so can efficiently carry out the processing little to damage to wafers.
Fig. 5 A is the sectional view that expression utilizes existing plasma-etching apparatus one example of inductively coupled plasma.This plasma Etaching device 200 possesses: room (chamber) 201, and portion is provided with the pedestal 203 of loading as the wafer of handled object within it; Bell jar (bell-jar) 202, the top that is communicated with room 201 is provided with; Antenna 205 is wrapped in the periphery of bell jar 202; High frequency bias power supply 204 is connected in pedestal 203; With high frequency electric source 206, be connected in antenna 205, by providing High frequency power to antenna 205, in bell jar 202, form induction field, and produce the plasma of handling gas, thereby wafer W is implemented plasma treatment from high frequency electric source 206.
But, in this plasma-etching apparatus 200, shown in arrow among Fig. 5 A, form from the oblique electric field of antenna 205 towards pedestal 203, especially after plasma igniting, because this oblique electric field shown in Fig. 5 B, can destroy the fine pattern shape that forms in wafer surface after the relative wafer surface oblique incidence of etchant, and, the electronics oblique incidence is after wafer surface, and stored charge becomes problem.
As the method for removing as the oblique electric field of this problem reason, for example open in the flat 5-206072 communique the spy, the method for use Faraday shield spare (Faraday shield) is disclosed.For example shown in Fig. 5 C, Faraday shield spare 207 is the cartridges that are made of the electric conductor between bell jar 202 that is arranged on plasma-etching apparatus 200 ' and the antenna 205, the effect of the electric field component by short circuit and its direction of principal axis level, remove the vertical component of electric field, thereby do not form oblique electric field.But, remove the vertical direction electric field if so, then effective electric field component diminishes because the article on plasma body is lighted a fire, so the problem that exists plasma to be difficult to light a fire.
Given this situation proposes the present invention, and its purpose is to provide a kind of plasma processing apparatus and method of plasma processing, utilizes inductively coupled plasma, simultaneously, is difficult to produce the defective that oblique electric field causes after plasma igniting.In addition, purpose is to provide a kind of plasma processing apparatus and method of plasma processing, even use Faraday shield spare, the plasma of also can lighting a fire really under the inductively coupled plasma mode.
Summary of the invention
In order to address the above problem, the 1st aspect of the present invention provides a kind of plasma processing apparatus, it is characterized in that possessing: be communicated with, be arranged at the container handling that this accommodation section is the top and the plasma portion of formation that have insulator wall constitutes, processed substrate implemented plasma treatment by the accommodation section that holds processed substrate with this accommodation section; Be arranged on conductivity mounting table above-mentioned accommodation section, that load processed substrate; Be arranged on the antenna assembly above-mentioned insulator wall outside, that in above-mentioned plasma formation portion, form induction field; The 1st high frequency electric source of electric power is provided with first high frequency to said antenna device; Provide induction field that utilization forms by said antenna device and ionization becomes the gas supply device that the plasma of plasma generates gas and carries out the processing gas that plasma treatment uses; According to relative with above-mentioned mounting table and be arranged on the electroconductive component in the above-mentioned insulator wall outside; With the 2nd high frequency electric source that electric power is provided with second high frequency to above-mentioned mounting table.
According to above-mentioned the 1st aspect, be arranged on the electroconductive component in the above-mentioned insulator wall outside because possess relative and the 2nd high frequency electric source of High frequency power is provided with second high frequency to above-mentioned mounting table with above-mentioned mounting table, so when plasma igniting, provide electric power with second high frequency to above-mentioned mounting table from above-mentioned the 2nd high frequency electric source, between above-mentioned mounting table and above-mentioned electroconductive component, form electric field, thereby the electric field that forms between above-mentioned mounting table and above-mentioned electroconductive component becomes the domination state, so can suppress the bad influence that the electric field of oblique formation produces above-mentioned processed substrate.
The 2nd aspect of the present invention provides a kind of plasma processing apparatus, it is characterized in that: possess: the room that holds processed substrate; Be arranged on according to being communicated with above-mentioned room this room top, have the sidewall that constitutes by insulator and a bell jar of roof; Be arranged on conductivity mounting table in the above-mentioned room, that load processed substrate; Be arranged on the outside of above-mentioned bell jar sidewall, in above-mentioned bell jar, form the antenna assembly of induction field; The 1st high frequency electric source of electric power is provided with first high frequency to said antenna device; Provide induction field that utilization forms by said antenna device and ionization becomes the gas supply device that the plasma of plasma generates gas and carries out the processing gas that plasma treatment uses; Be arranged on the electroconductive component of above-mentioned roof top with above-mentioned mounting table subtend; With the 2nd high frequency electric source that electric power is provided with second high frequency to above-mentioned mounting table.
According to above-mentioned the 2nd aspect, be arranged on the electroconductive component of above-mentioned roof top because possessing above-mentioned relatively mounting table and the 2nd high frequency electric source of electric power is provided with second high frequency to above-mentioned mounting table, so when plasma igniting, provide electric power with second high frequency to above-mentioned mounting table from above-mentioned the 2nd high frequency electric source, between above-mentioned mounting table and above-mentioned electroconductive component, form electric field perpendicular to above-mentioned processed substrate, thereby the electric field perpendicular to above-mentioned processed substrate becomes the domination state, so can suppress the bad influence that the electric field of oblique formation produces above-mentioned processed substrate.
The 3rd aspect of the present invention provides a kind of plasma processing apparatus, it is characterized in that: possess: the room that holds processed substrate; Be arranged on according to being communicated with above-mentioned room this room top, have the sidewall that constitutes by insulator and a bell jar of roof; Be arranged on conductivity mounting table in the above-mentioned room, that load processed substrate; Be arranged on the outside of above-mentioned bell jar sidewall, in above-mentioned bell jar, form the antenna assembly of induction field; The 1st high frequency electric source of electric power is provided with first high frequency to said antenna device; Provide ionization to become the gas supply device that the plasma of plasma generates gas and carries out the processing gas that plasma treatment uses by utilizing induction field that said antenna device forms; Be arranged on the Faraday shield spare between above-mentioned bell jar and the said antenna device; Be arranged on the electroconductive component of above-mentioned roof top with above-mentioned mounting table subtend; With the 2nd high frequency electric source that electric power is provided with second high frequency to above-mentioned mounting table.
According to above-mentioned the 3rd aspect, because possess the Faraday shield spare that is arranged between above-mentioned bell jar and the said antenna device, be arranged on the electroconductive component of above-mentioned roof top with above-mentioned mounting table subtend, with the 2nd high frequency electric source that electric power is provided with second high frequency to above-mentioned mounting table, so when plasma igniting, provide electric power with second high frequency to above-mentioned mounting table from above-mentioned the 2nd high frequency electric source, between above-mentioned mounting table and above-mentioned electroconductive component, form electric field perpendicular to above-mentioned processed substrate, thereby can apply the essential electric field of plasma igniting, therefore, when using Faraday shield spare to prevent, can carry out plasma igniting really to processed substrate formation oblique electric field.
According to above-mentioned 1-the 3rd on the one hand, preferred above-mentioned mounting table has the heating arrangements of the processed substrate of heating.Can promote the reaction of plasma treatment thus.
The 4th aspect of the present invention provides a kind of method of plasma processing, and this method uses plasma processing apparatus to carry out plasma treatment, and this plasma processing unit possesses: the room that holds processed substrate; Be arranged on according to being communicated with above-mentioned room this room top, have the sidewall that constitutes by insulator and a bell jar of roof; Be arranged on conductivity mounting table in the above-mentioned room, that load processed substrate; Be arranged on the outside of above-mentioned bell jar sidewall, in above-mentioned bell jar, form the antenna assembly of induction field; The 1st high frequency electric source of electric power is provided with first high frequency to said antenna device; Provide induction field that utilization forms by said antenna device and ionization becomes the gas supply device that the plasma of plasma generates gas and carries out the processing gas that plasma treatment uses; Be arranged on the electroconductive component of above-mentioned roof top with above-mentioned mounting table subtend; With the 2nd high frequency electric source that electric power is provided with second high frequency to above-mentioned mounting table, it is characterized in that: provide High frequency power to above-mentioned mounting table from above-mentioned the 2nd high frequency electric source, between above-mentioned mounting table and above-mentioned electroconductive component, form electric field perpendicular to processed substrate, form plasma, afterwards, provide High frequency power to said antenna device, in above-mentioned bell jar, form induction field from above-mentioned the 1st high frequency electric source, form inductively coupled plasma, processed substrate is implemented plasma treatment.
According to above-mentioned the 4th aspect, provide High frequency power from above-mentioned the 2nd high frequency electric source to above-mentioned mounting table, between above-mentioned mounting table and above-mentioned electroconductive component, form electric field perpendicular to processed substrate, form plasma, afterwards, provide High frequency power from above-mentioned the 1st high frequency electric source to said antenna device, in above-mentioned bell jar, form induction field, form inductively coupled plasma, processed substrate is implemented plasma treatment, so can be before induction field, between above-mentioned mounting table and electroconductive component, form electric field perpendicular to processed substrate, and the formation plasma, can prevent under situation, to become problem thus by induction field igniting plasma, oblique electric field causes the phenomenon of bad influence after the igniting to processed substrate.
The 5th aspect of the present invention provides a kind of method of plasma processing, and this method uses plasma processing apparatus to carry out plasma treatment, and this plasma processing unit possesses: the room that holds processed substrate; Be arranged on according to being communicated with above-mentioned room this room top, have the sidewall that constitutes by insulator and a bell jar of roof; Be arranged on conductivity mounting table in the above-mentioned room, that load processed substrate; Be arranged on the outside of above-mentioned bell jar sidewall, in above-mentioned bell jar, form the antenna assembly of induction field; The 1st high frequency electric source of electric power is provided with first high frequency to said antenna device; Provide ionization to become the gas supply device that the plasma of plasma generates gas and carries out the processing gas that plasma treatment uses by utilizing induction field that said antenna device forms; Be arranged on the Faraday shield spare between above-mentioned bell jar and the said antenna device; Be arranged on the electroconductive component of above-mentioned roof top with above-mentioned mounting table subtend; With the 2nd high frequency electric source that electric power is provided with second high frequency to above-mentioned mounting table, it is characterized in that: provide High frequency power to above-mentioned mounting table from above-mentioned the 2nd high frequency electric source, between above-mentioned mounting table and above-mentioned electroconductive component, form electric field, the igniting plasma, afterwards, provide High frequency power to said antenna device, in above-mentioned bell jar, form induction field from above-mentioned the 1st high frequency electric source, form inductively coupled plasma, processed substrate is implemented plasma treatment.
According to above-mentioned the 5th aspect, provide High frequency power from above-mentioned the 2nd high frequency electric source to above-mentioned mounting table, between above-mentioned mounting table and above-mentioned electroconductive component, form electric field, the igniting plasma, afterwards, provide High frequency power from above-mentioned the 1st high frequency electric source to said antenna device, in above-mentioned bell jar, form induction field, form inductively coupled plasma, processed substrate is implemented plasma treatment, so can be before induction field, between above-mentioned mounting table and electroconductive component, form electric field, thereby can apply the essential electric field of plasma igniting, therefore by the electric field that between above-mentioned mounting table and above-mentioned electroconductive component, forms, even under the situation that prevents from the Faraday shield spare of processed substrate formation oblique electric field is handled in use, also can carry out plasma igniting really in inductively coupled plasma.
Aspect the above-mentioned the 4th or the 5th, preferred above-mentioned the 1st high frequency electric source constitutes after above-mentioned the 2nd high frequency electric source begins High frequency power is provided, and begins to provide High frequency power.Thereby, in the electric field igniting plasma that forms by High frequency power, carry out plasma treatment in the inductively coupled plasma that can behind the igniting plasma, form by High frequency power from above-mentioned the 1st high frequency electric source from above-mentioned the 2nd high frequency electric source.At this moment, above-mentioned the 2nd high frequency electric source preferably constitutes after above-mentioned the 1st high frequency electric source begins High frequency power is provided, and stops to provide High frequency power.Thereby can prevent from above-mentioned processed substrate, to produce big bias voltage.
In addition, in above-mentioned method of plasma processing, preferred limit is heated processed substrate limit and is implemented plasma treatment.Can promote the reaction of plasma treatment thus.
And above-mentioned method of plasma processing is applicable to the processing of the natural oxide film that removal forms on above-mentioned processed substrate.At this moment, preferably use argon gas and hydrogen to be used as above-mentioned plasma and generate gas and above-mentioned processing gas.And, also can use inert gases such as neon, helium, xenon to replace argon gas.
Description of drawings
Fig. 1 is the schematic configuration diagram that expression possesses the metal film-forming system of pre-apparatus for eliminating sludge, and this pre-apparatus for eliminating sludge is suitable for the plasma processing apparatus of embodiment of the present invention 1.
Fig. 2 is the schematic configuration diagram of the plasma processing apparatus of embodiment of the present invention 1.
Fig. 3 is the oblique view of the Faraday shield spare in the pre-apparatus for eliminating sludge shown in Figure 2.
Fig. 4 is the schematic section of the pre-apparatus for eliminating sludge of embodiment of the present invention 2.
Fig. 5 A is the schematic section of plasma-etching apparatus one example of the existing inductively coupled plasma mode of expression.
Fig. 5 B is the figure of etching movement of the plasma-etching apparatus of the existing inductively coupled plasma mode of expression.
Fig. 5 C is the existing schematic section that possesses plasma-etching apparatus one example of Faraday shield spare of expression.
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention 1 are described.
Fig. 1 is the schematic configuration diagram that expression possesses the metal film-forming system of pre-apparatus for eliminating sludge, and this pre-apparatus for eliminating sludge is suitable for the plasma processing apparatus of embodiment of the present invention 1.This metal film-forming system 20 is many rooms types, at central configuration carrying room 10, (forming under the situation of the metal level that constitutes by tungsten (W) at the pre-apparatus for eliminating sludge 15 that two box rooms 11,12, degassing room 13, Ti film formation device 14, present embodiment are set around it, TiN film formation device 16, Al film formation device 17, be tungsten (W) film formation device, but be that example describes with the Al film formation device in the present embodiment.) and cooling room 18.
In this metal film-forming system 20, in the semiconductor wafer that forms contact hole or through hole (below abbreviate wafer W as), form the barrier layer, form Al (aluminium) layer thereon, and imbed the hole, form the Al wiring.Particularly, at first from box room 11, take out a wafer W, behind the pre-apparatus for eliminating sludge 15 of packing into, remove the natural oxide film that forms on the surface of wafer W by carrying arm 19.Then, pack wafer W into the degassing with room 13, carry out the degassing of wafer W by carrying arm 19.Afterwards,, carry out the film forming of Ti film, reinstall TiN film formation device 16, carry out the film forming of TiN, form the barrier layer the wafer W Ti film formation device 14 of packing into.Afterwards, form the Al layer by Al film formation device 17.So far, the film forming of regulation finishes, and afterwards, by cooling room 18 cooling wafer W, is contained in the box room 12.
Thus, for example on the wafer W that is provided with the interlayer dielectric that is formed with the contact hole that reaches the diffusion of impurities zone, make device, this device have the barrier layer that on this diffusion of impurities zone and interlayer dielectric, forms and be formed on this barrier layer, with the metal level of the regional conducting of diffusion of impurities.
Below, describe the pre-apparatus for eliminating sludge 15 that is loaded in the present embodiment on the above-mentioned metal film-forming system 20 in detail.Fig. 2 is the schematic section of pre-apparatus for eliminating sludge 15.As shown in Figure 2, pre-apparatus for eliminating sludge 15 has: room 31 roughly cylindraceous; With above room 31, according to the bell jar 32 roughly cylindraceous that is provided with the continuous mode of room 31.In room 31, the pedestal (mounting table) 33 that constitutes by conductive material that has horizontal support to use with the state configuration that supports by cylindric support component 35 as the wafer W of handled object.Above bell jar 32, relatively be provided with and the pedestal 33 the same electroconductive components 49 that constitute by conductive material with pedestal 33.
On pedestal 33, connect the 2nd high frequency electric source 34, provide High frequency power to pedestal 33, thereby between pedestal 33 and electroconductive component 49, form electric field perpendicular to wafer W from the 2nd high frequency electric source 34.Also has following structure: in pedestal 33, bury heater 36 underground, power to heater 36 from power supply 37, thereby wafer W can be heated to set point of temperature.
Bell jar 32 is formed by for example electrical insulating material such as quartz or ceramic material, around it, configuration is provided with the Faraday shield spare roughly cylindraceous 44 of the slot part 44a of lengthwise opening as shown in Figure 3 with predetermined distance, and makes coil 42 into antenna element in its outer felt.Connection for example has the 1st high frequency electric source 43 that frequency is 450kHz on the coil 42, provides High frequency power from the 1st high frequency electric source 43 to coil 42, thereby forms induction field in bell jar 32.In addition, Faraday shield spare 44 has and prevents to form from the function of coil 42 to the oblique electric field of pedestal 33.
Above pedestal 33, structure is, but the holding ring 38 that the setting clamping is loaded in the wafer W outer rim on the pedestal 33 and keeps, and holding ring 38 can be by not shown elevating mechanism lifting.When holding ring 38 is transferred on the supporting pin (not shown) that is arranged in the pedestal 33 after wafer W being moved in the room 31, rise to assigned position, above-mentioned supporting pin is submerged in the pedestal 33 and after being loaded in wafer W on the pedestal 33, in clamping and when keeping wafer W, drop to the position of the outer rim of butt and holding chip W.
In addition, the sidewall of room 31 has opening 46, and gate valve 47 is set on the position corresponding to room 31 outer openings 46, under the state of opening this gate valve 47, carries wafer W between adjacent load locking room (not shown) and room 31.And, on the sidewall of room 31, also be provided with gas supply nozzle 48, utilize this gas supply nozzle 48 in room 31 and bell jar 32, to provide the gas that provides mechanism 60 to provide from gas described later.
Gas provides mechanism 60 to have provides Ar gas to generate the Ar gas supply source 61 of gas and H is provided as plasma
2Gas is as the regulate the flow of vital energy H of body of etch processes use
2Gas supply source 62.Ar gas supply source 61 connects gas pipeline 63, and mass flow controller 67 and the open and close valve 65,69 before and after it are set on this gas pipeline 63.In addition, at H
2Connect gas pipeline 64 on the gas supply source 62, mass flow controller 68 and the open and close valve 66,70 before and after it are set on this gas pipeline 64.These gas pipelines 63,64 are connected in gas pipeline 71, and this gas pipeline 71 is connected with gas supply nozzle 48.
In addition, blast pipe 50 is connected on the diapire of room 31, connects the exhaust apparatus 51 that comprises vacuum pump on this blast pipe 50.By making exhaust apparatus 51 actions, can will maintain the specified vacuum degree in room 31 and the room 32.
Below, illustrate by the pre-apparatus for eliminating sludge 15 of formation like this and remove the action that is formed on the natural oxide film on the wafer W.
At first, open gate valve 47, by being arranged on the carrying arm 19 in the carrying room 10, wafer W packed in the room 31, and with wafer transfer to the supporting pin (not shown) of pedestal 33.Afterwards, above-mentioned supporting pin is submerged in the pedestal 33 and wafer W is loaded on the pedestal 33, afterwards, holding ring 38 is descended, holding chip W outer rim.Then, closing gate valve 47, with exhaust in room 31 and the bell jar 32, become the decompression state of regulation by exhaust apparatus 51, and under this decompression state, in room 31 and bell jar 32, import Ar gas with the regulation flow from Ar gas supply source 61, simultaneously, provide High frequency power to pedestal 33, between pedestal 33 and electroconductive component 49, form electric field perpendicular to wafer W from the 2nd high frequency electric source 34, by this electric field excitation Ar gas, the igniting plasma.
Behind the igniting plasma, beginning provides High frequency power from the 1st high frequency electric source 43 to coil 42, forms induction field in bell jar 32, simultaneously, stops to provide High frequency power from the 2nd high frequency electric source 34 to pedestal 33, keeps plasma by induction field afterwards.Under necessary information, also can after begin to provide High frequency power, keep from the 2nd high frequency electric source 34 High frequency power is provided from the 1st high frequency electric source 43.In this state, the flow from Ar gas supply source 61 is reduced, simultaneously, from H
2 Gas supply source 62 begins to import H in room 31
2Gas, and the limit is by heater 36 heated chip W, the processing that the natural oxide film on the wafer W is removed in etching is carried out on the limit.At this moment,, prevent that coil 42 from forming the electric field of relative wafer W surface tilt by Faraday shield spare 44, thereby, prevent to be mapped to that the picture on surface shape of wafer W is destroyed on the wafer W surface, stored charge in wafer W because of ion or electronics are oblique.In addition because inductively coupled plasma bias voltage is low in essence, so damage little.
As mentioned above, behind the natural oxide film of removing on the wafer W, regulate the air displacement of exhaust apparatus 51 and from the Ar gas delivery volume of Ar gas supply source 61 with from H
2The H of gas supply source 62
2Gas delivery volume will become the vacuum degree equal with carrying room 10, simultaneously in room 31 and the room 32, make above-mentioned supporting pin protrude in pedestal 33, lift wafer W, open gate valve 47, carrying arm 19 is entered in the room 31, take out wafer W, thereby the operation in the pre-apparatus for eliminating sludge 15 finishes.
As this treatment conditions, for example can establish the power of the 1st high frequency electric source 43: the power of 500-1000W, frequency: 450kHz, the 2nd high frequency electric source 34: the heating-up temperature of 500-1000W, frequency: 13.56MHz, heater 36: 50-500 ℃, the pressure in the room 31: 0.133-13.3Pa (0.1-100mTorr).In addition, under the Ar gas flow is the scope of 0-0.050L/min (0-50sccm), H
2Gas flow is suitably to provide gas respectively under the scope of 0-0.200L/min (0-200sccm), particularly, and the Ar gas flow when setting up an office fire: 0.050L/min (50sccm), the Ar gas flow/H when handling
2Gas flow: 0.008/0.012L/min (8/12sccm).
By above-mentioned plasma treatment, can suitably remove the natural oxide film on for example Si, CoSi, W, WSi, the TiSi.In the plasma processing apparatus of existing inductively coupled plasma method, if using Faraday shield spare 44 removes from the oblique electric field of coil 42 to pedestal 33, then electric field dies down, so there is the problem of so-called plasma igniting difficulty, but according to said structure, by the electric field that between pedestal 33 and electroconductive component 49, forms, the plasma of can lighting a fire really, and the inductively coupled plasma by induction field behind the plasma igniting forms can carry out pre-scale removal operation.
By so utilizing inductively coupled plasma, can assist plasma by magnetic-field component, so can improve H
2Ratio, reduce the ratio of Ar simultaneously, in addition,,, become low bias voltage simultaneously so can improve plasma density because can independently control plasma density and bias voltage.Thus, can extremely effectively remove natural oxide film.Under capacitance coupling plasma, because plasma unstable, so can not reduce Ar, in addition, because can not independently control plasma density and bias voltage, so can not effectively remove natural oxide film.
Below, embodiments of the present invention 2 are described.
Fig. 4 is the sectional view of the pre-apparatus for eliminating sludge of the expression plasma processing apparatus that is suitable for present embodiment.This pre-apparatus for eliminating sludge 15 ' except that Faraday shield spare 44 is not set, all the other and the pre-apparatus for eliminating sludge 15 the same formations of execution mode 1.According to this pre-apparatus for eliminating sludge 15 ', the same with the pre-apparatus for eliminating sludge 15 of execution mode 1, from the 2nd high frequency electric source 34 to pedestal 33 High frequency power is provided and the plasma of lighting a fire after, provide High frequency power from the 1st high frequency electric source 43 to coil 42, form inductively coupled plasma, by the processing action of plasma treatment, remove the natural oxide film that forms on the wafer W.
In the present embodiment, when plasma igniting, before 43 power supplies of the 1st high frequency electric source, as mentioned above, provide high frequency electric source from the 2nd high frequency electric source 34 to pedestal 33, and form electric field perpendicular to wafer W between pedestal 33 and electroconductive component 49, so direction becomes the domination state perpendicular to the electric field of wafer W.Thereby, because after the plasma igniting that the surface characteristic of the wafer W that causes because of oblique electric field worsens or the defective of electric charge accumulation etc. is easy to generate, oblique electric field does not form, so can reduce that the surface characteristic of above-mentioned wafer W worsens or the influence of electric charge accumulation etc.In addition, behind the plasma of so lighting a fire, by providing High frequency power to coil 42 from the 1st high frequency electric source 43, can be the same with execution mode 1, come the low plasma treatment of carrying out of high efficiency by inductively coupled plasma with damaging.
The invention is not restricted to above-mentioned execution mode, can carry out various distortion.For example, in the above-described embodiment, example is applicable to the present invention the situation of removing the pre-apparatus for eliminating sludge of natural oxide film in the metal film-forming system, but the present invention is also applicable to carrying out other plasma-etching apparatus such as contact etch, and the present invention is also applicable to other plasma processing apparatus such as plasma CVDs.In addition, this plasma processing unit also can constitute by the conductor plate that loads ground connection above the bell jar of existing inductive couple plasma processing device.By legacy devices being implemented simple the transformation under the situation about constituting, installation cost of the present invention can suppress very lowly so.And processed substrate is not limited to semiconductor wafer, also other substrate.
As mentioned above, according to the present invention, because possess according to relative with above-mentioned mounting table and be arranged on the electroconductive component in the above-mentioned insulator wall outside and the 2nd high frequency electric source of High frequency power is provided to above-mentioned mounting table, so when plasma igniting, provide High frequency power from above-mentioned the 2nd high frequency electric source to above-mentioned mounting table, between above-mentioned mounting table and above-mentioned electroconductive component, form electric field, thereby the electric field that forms between above-mentioned mounting table and above-mentioned electroconductive component in above-mentioned container handling becomes the domination state, so can suppress the bad influence that the electric field of oblique formation produces above-mentioned processed substrate.Therefore, provide plasma processing apparatus and the method for plasma processing that processing accuracy is high and can effectively handle.
In addition, according to the present invention, be arranged on the electroconductive component of above-mentioned roof top because possessing above-mentioned relatively mounting table and the 2nd high frequency electric source of High frequency power is provided to above-mentioned mounting table, so when plasma igniting, provide High frequency power from above-mentioned the 2nd high frequency electric source to above-mentioned mounting table, between above-mentioned mounting table and above-mentioned electroconductive component, form electric field perpendicular to above-mentioned processed substrate, thereby the electric field perpendicular to above-mentioned processed substrate becomes the domination state, so can suppress the bad influence that the electric field of oblique formation produces above-mentioned processed substrate.Therefore, provide plasma processing apparatus and the method for plasma processing that processing accuracy is high and can effectively handle really.
In addition, according to the present invention, because possess the Faraday shield spare that is arranged between above-mentioned bell jar and the said antenna device, be arranged on the electroconductive component of above-mentioned roof top with above-mentioned mounting table subtend, with the 2nd high frequency electric source that High frequency power is provided to above-mentioned mounting table, so when plasma igniting, provide High frequency power from above-mentioned the 2nd high frequency electric source to above-mentioned mounting table, between above-mentioned mounting table and above-mentioned electroconductive component, form electric field perpendicular to above-mentioned processed substrate, thereby can apply the essential electric field of igniting, therefore, when using Faraday shield spare to prevent, can carry out plasma igniting really to processed substrate formation oblique electric field.Therefore, realize plasma processing apparatus and method of plasma processing, eliminate the problem of plasma igniting difficulty when in the inductively coupled plasma mode, also using faraday's shielding part.
Claims (13)
1. plasma processing apparatus is characterized in that: possess:
Be communicated with, be arranged at the top of this accommodation section by the accommodation section that holds processed substrate with this accommodation section and have that the plasma portion of formation of insulator wall constitutes, as processed substrate to be implemented plasma treatment container handling;
Be arranged on the conductivity mounting table described accommodation section, that load processed substrate;
Be arranged on the antenna assembly described insulator wall outside, that in described plasma formation portion, form induction field;
The 1st high frequency electric source of electric power is provided with first high frequency to described antenna assembly;
Provide induction field that utilization forms by described antenna assembly and ionization becomes the gas supply device that the plasma of plasma generates gas and carries out the processing gas that plasma treatment uses;
According to processed substrate between generate vertical electric field and be arranged on the outside and electroconductive component ground connection of described insulator wall with the mode of described mounting table subtend; With
The 2nd high frequency electric source of electric power is provided with second high frequency to described mounting table.
2. plasma processing apparatus is characterized in that: possess:
The room that holds processed substrate;
Be arranged on according to being communicated with described room this room top, have the sidewall that constitutes by insulator and a bell jar of roof;
Be arranged on conductivity mounting table in the described room, that load processed substrate;
Be arranged on the outside of described bell jar sidewall, in described bell jar, form the antenna assembly of induction field;
The 1st high frequency electric source of electric power is provided with first high frequency to described antenna assembly;
Provide induction field that utilization forms by described antenna assembly and ionization becomes the gas supply device that the plasma of plasma generates gas and carries out the processing gas that plasma treatment uses;
According to processed substrate between generate vertical electric field mode above described roof with described mounting table subtend be provided with and electroconductive component ground connection; With
The 2nd high frequency electric source of electric power is provided with second high frequency to described mounting table.
3. plasma processing apparatus is characterized in that: possess:
The room that holds processed substrate;
Be arranged on according to being communicated with described room this room top, have the sidewall that constitutes by insulator and a bell jar of roof;
Be arranged on conductivity mounting table in the described room, that load processed substrate;
Be arranged on the outside of described bell jar sidewall, in described bell jar, form the antenna assembly of induction field;
The 1st high frequency electric source of electric power is provided with first high frequency to described antenna assembly;
Provide ionization to become the gas supply device that the plasma of plasma generates gas and carries out the processing gas that plasma treatment uses by utilizing induction field that described antenna assembly forms;
Be arranged on the Faraday shield spare between described bell jar and the described antenna assembly;
According to and processed substrate between generate vertical electric field mode above described roof with described mounting table subtend be provided with and electroconductive component ground connection; With
The 2nd high frequency electric source of electric power is provided with second high frequency to described mounting table.
4. according to the described plasma processing apparatus of one of claim 1-3, it is characterized in that:
Described mounting table has the heating arrangements of the processed substrate of heating.
5. according to the described plasma processing apparatus of one of claim 1-3, it is characterized in that: described electroconductive component is smooth.
6. according to the described plasma processing apparatus of one of claim 1-3, it is characterized in that: described the 1st high frequency electric source is connected with the upper end of described antenna assembly.
7. method of plasma processing, this method use plasma processing apparatus to carry out plasma treatment, and this plasma processing unit possesses: the room that holds processed substrate; Be arranged on according to being communicated with described room this room top, have the sidewall that constitutes by insulator and a bell jar of roof; Be arranged on conductivity mounting table in the described room, that load processed substrate; Be arranged on the outside of described bell jar sidewall, in described bell jar, form the antenna assembly of induction field; The 1st high frequency electric source of electric power is provided with first high frequency to described antenna assembly; Provide induction field that utilization forms by described antenna assembly and ionization becomes the gas supply device that the plasma of plasma generates gas and carries out the processing gas that plasma treatment uses; Be arranged on the top and smooth electroconductive component ground connection of described roof with described mounting table subtend; With provide the 2nd high frequency electric source of electric power to described mounting table with second high frequency, it is characterized in that:
Provide High frequency power from described the 2nd high frequency electric source to described mounting table, between described mounting table and described electroconductive component, form electric field perpendicular to processed substrate, form plasma, afterwards, provide High frequency power from described the 1st high frequency electric source to described antenna assembly, in described bell jar, form induction field, form inductively coupled plasma, processed substrate is implemented plasma treatment.
8. method of plasma processing, this method use plasma processing apparatus to carry out plasma treatment, and this plasma processing unit possesses: the room that holds processed substrate; Be arranged on according to being communicated with described room this room top, have the sidewall that constitutes by insulator and a bell jar of roof; Be arranged on conductivity mounting table in the described room, that load processed substrate; Be arranged on the outside of described bell jar sidewall, in described bell jar, form the antenna assembly of induction field; The 1st high frequency electric source of electric power is provided with first high frequency to described antenna assembly; Provide ionization to become the gas supply device that the plasma of plasma generates gas and carries out the processing gas that plasma treatment uses by utilizing induction field that described antenna assembly forms; Be arranged on the Faraday shield spare between described bell jar and the described antenna assembly; Be arranged on the top and smooth electroconductive component ground connection of described roof with described mounting table subtend; With provide the 2nd high frequency electric source of electric power to described mounting table with second high frequency, it is characterized in that:
Provide High frequency power from described the 2nd high frequency electric source to described mounting table, between described mounting table and described electroconductive component, form vertical electric field, the igniting plasma, afterwards, provide High frequency power from described the 1st high frequency electric source to described antenna assembly, in described bell jar, form induction field, form inductively coupled plasma, processed substrate is implemented plasma treatment.
9. according to claim 7 or 8 described method of plasma processing, it is characterized in that:
After described the 1st high frequency electric source began High frequency power is provided, described the 2nd high frequency electric source stopped to provide High frequency power.
10. according to claim 7 or 8 described method of plasma processing, it is characterized in that:
The limit is heated processed substrate limit and is implemented plasma treatment.
11., it is characterized in that according to claim 7 or 8 described method of plasma processing:
Described plasma treatment is the processing of removing the natural oxide film that forms on processed substrate.
12. method of plasma processing according to claim 11 is characterized in that:
Described plasma generates gas and described processing gas is made of argon gas and hydrogen.
13. according to claim 7 or 8 described method of plasma processing, it is characterized in that: described the 1st high frequency electric source is connected with the upper end of described antenna assembly.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32711/01 | 2001-02-08 | ||
| JP32711/2001 | 2001-02-08 | ||
| JP2001032711A JP2002237486A (en) | 2001-02-08 | 2001-02-08 | Apparatus and method of plasma treatment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1554114A CN1554114A (en) | 2004-12-08 |
| CN100375244C true CN100375244C (en) | 2008-03-12 |
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ID=18896596
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028046854A Expired - Fee Related CN100375244C (en) | 2001-02-08 | 2002-02-08 | Plasma treatment device and plasma treatment method |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7578946B2 (en) |
| EP (1) | EP1365446A4 (en) |
| JP (1) | JP2002237486A (en) |
| KR (1) | KR100855617B1 (en) |
| CN (1) | CN100375244C (en) |
| WO (1) | WO2002063667A1 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| US7578946B2 (en) | 2009-08-25 |
| EP1365446A4 (en) | 2006-01-04 |
| KR100855617B1 (en) | 2008-09-01 |
| KR20030086996A (en) | 2003-11-12 |
| US20040050329A1 (en) | 2004-03-18 |
| JP2002237486A (en) | 2002-08-23 |
| EP1365446A1 (en) | 2003-11-26 |
| WO2002063667A1 (en) | 2002-08-15 |
| US20070102119A1 (en) | 2007-05-10 |
| CN1554114A (en) | 2004-12-08 |
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