CN105789011B - Inductively type plasma processing apparatus - Google Patents
Inductively type plasma processing apparatus Download PDFInfo
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- CN105789011B CN105789011B CN201410836742.8A CN201410836742A CN105789011B CN 105789011 B CN105789011 B CN 105789011B CN 201410836742 A CN201410836742 A CN 201410836742A CN 105789011 B CN105789011 B CN 105789011B
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Abstract
The invention discloses a kind of inductively type plasma processing apparatus, including：Reaction chamber, with the insulating sleeve connected at the top of reaction chamber, it is enclosed on the Faraday shield on the outside of insulating sleeve and being grounded, and the first inductive coupler coils being wound on the cylindrical body.Faraday shield includes conductive cylindrical body, upper flange and lower flange.Multiple elongated slots axially extending along its circle distribution are formed in cylindrical body, the length of elongated slot is less than or equal to the height of cylindrical body.Upper flange is the loop configuration of closure.Lower flange is non-conductive or non-closed loop configuration, and when producing alternating magnetic field to be passed through radio-frequency current in the first inductive coupler coils, the lower flange does not produce induced-current.The present invention can shield the coupling of capacitive electric field induction while improve magnetic field induction coupling.
Description
Technical field
The present invention relates to semiconductor processing equipment, more particularly to a kind of inductively type plasma processing apparatus.
Background technology
Currently, inductively type plasma processing apparatus is a variety of as film forming, etching etc. is performed on the semiconductor wafer
The device of technique, it is widely used in the technical field of semiconductor devices manufacture.The inductively type plasma of prior art
Processing unit includes application of vacuum chamber, and its bottom is provided with the pedestal for carrying pending substrate, and top has insulation cover plate.Insulation
The ceramic sleeve connected with processing chamber housing is vertically arranged on cover plate, process gas can input processing chamber at the top of ceramic sleeve.
Winding inductive coupler coils, inductive coupler coils are connected by adaptation with radio frequency source on the outside of ceramic sleeve.Radio frequency source is to sensing
Coupling coil provides radio-frequency current so that coil produces alternating magnetic field, and process gas is excited as plasma.
Although magnetic field caused by coil is inductively, the high peak to peak radio-frequency power being applied on coil is same
Can be by capacitive electric field energy coupling to the reaction chamber of part, and this electric field energy can accelerate plasma charged particles
Cause bombardment and the damage to insulation cover plate and insulating sleeve.To improve this problem, in the prior art in insulating sleeve and sense
Answer and be additionally provided with Faraday shield between coupling coil, for shielding field coupling.As shown in figure 1, Faraday shield is to lead
Electric tubular structure, there are multiple cracks, by the way that Faraday shield ground connection may be such that into capacitive electric field is difficult at incoming vacuum
Chamber is managed, bombards simultaneously Damage to insulation cover plate and insulating sleeve so as to avoid the charged particle in plasma accelerated.
However, when inductive coupler coils are passed through radio-frequency current and produce alternating magnetic field, in existing Faraday shield
Induced-current can be produced, the induced-current produces reverse magnetic field in turn, weakens the strong of alternating magnetic field caused by coil
Degree so that the efficiency of the electromagnetic induction coupling of the radio-frequency power acted on coil is very low.
Accordingly, it is desirable to provide a kind of plasma processing apparatus is to improve drawbacks described above.
The content of the invention
The defects of it is a primary object of the present invention to overcome prior art, to improve inductive couple plasma processing device
The efficiency of the electromagnetic induction coupling of middle radio-frequency power prevents electric field induction from coupling simultaneously.
To reach above-mentioned purpose, the present invention provides a kind of inductively type plasma processing apparatus, including：Reaction chamber
Room, it is provided with the pedestal for loading pending substrate；With the insulating sleeve connected at the top of the reaction chamber；It is enclosed on described
Insulating sleeve outside and the Faraday shield of ground connection, it includes the cylindrical body of conduction, is connected with the cylindrical body upper end
Upper flange, the lower flange that is connected with the lower end of the cylindrical body, wherein being formed in the cylindrical body along its circle distribution
Multiple axially extending elongated slots and the length of the elongated slot be less than or equal to the height of the cylindrical body, the upper flange is closes
The loop configuration of conjunction；And it is wound in the first inductive coupler coils on the cylindrical body.Wherein, the lower flange is led to be non-
Electric or non-closed loop configuration, when producing alternating magnetic field to be passed through radio-frequency current in first inductive coupler coils, institute
State lower flange and do not produce induced-current.
Preferably, the lower flange is close and non-conductive loop configuration.
Preferably, the upper flange is close and non-conductive loop configuration.
Preferably, the lower flange is conductive and non-closed loop configuration, wherein forming at least one run through under this
The radial slit of the Ring Width of flange.
Preferably, the lower flange and upper flange are conductive loop configuration.
Present invention also offers another inductively type plasma processing apparatus, including：Reaction chamber, it is provided with
Load the pedestal of pending substrate；Insulation cover plate, located at the reaction chamber roof and with connecting with the reaction chamber
Opening；It is used for the fixture for fixing the insulation cover plate located at the opening；It is vertically installed on the insulation cover plate and passes through
The insulating sleeve connected with the reaction chamber that is open；It is enclosed on the Faraday shield on the outside of the insulating sleeve and being grounded
Part, it includes the cylindrical body of conduction, the upper flange being connected with the cylindrical body upper end, the lower end company with the cylindrical body
The lower flange for connecing and being located on the annular fixing member, wherein being formed in the cylindrical body along multiple axial directions of its circle distribution
The length of the elongated slot of extension and the elongated slot is less than or equal to the height of the cylindrical body, and the upper flange is the ring junction of closure
Structure；The first inductive coupler coils being wound on the cylindrical body；And be arranged on the insulation cover plate be nested in it is described
The second inductive coupler coils outside first inductive coupler coils.Wherein, the lower flange is non-conductive or non-closed annular
Structure, and/or the fixture have non-conductive or non-closed loop configuration, with first inductive coupler coils and
When radio-frequency current generation alternating magnetic field is passed through in two inductive coupler coils, sense is not produced in the loop configuration of the non-conductive closure
Induced current.
Preferably, the lower flange is close and non-conductive loop configuration.
Preferably, the upper flange is close and non-conductive loop configuration.
Preferably, the lower flange is conductive and non-closed loop configuration, wherein forming at least one run through under this
The radial slit of the Ring Width of flange.
Preferably, the lower flange and upper flange are conductive loop configuration.
Preferably, the fixture includes the upper ring and a lower ring connected by fastener, and the upper ring and a lower ring all has
Depression makes the insulation cover plate be embedded in receiving portion therein to be collectively forming.
Preferably, the upper ring is close and non-conductive loop configuration.
Preferably, the lower ring is close and non-conductive loop configuration.
Preferably, the lower ring is conductive and non-closed loop configuration, at least one runs through the lower ring wherein being formed
The radial slit of width.
Preferably, first inductive coupler coils and second inductive coupler coils by power divider with it is same
Radio frequency power source is connected.
The beneficial effects of the present invention are by setting Faraday shield to block electric field induction to couple, while by by method
It is non-conductive or non-closed loop configuration to draw the anchor designs below the lower flange or lower flange of shielding part, is avoided at it
It is middle to produce induced-current and reverse variation magnetic field is produced by the induced-current, therefore can reduce or even eliminate inductively
The weakening of the alternating magnetic field of coil, so as to improve the coupling of the electromagnetic induction for the radio-frequency power being applied on coil.On the other hand, by
It is closure in upper flange, Faraday shield is still formed as an entirety, can not only consolidate and be set in outside insulating sleeve
Side, installation and fixation are also more convenient.
Brief description of the drawings
Fig. 1 is the structural representation of Faraday shield in the prior art；
Fig. 2 is the structural representation of the plasma processing apparatus of one embodiment of the invention；
Fig. 3 a are the structural representation of the Faraday shield of one embodiment of the invention；
Fig. 3 b are the structural representation of the Faraday shield of another embodiment of the present invention；
Fig. 4 is the structural representation of the plasma processing apparatus of another embodiment of the present invention.
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited in the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
Fig. 2 shows the schematic diagram of the inductive coupled type plasma processing apparatus of one embodiment of the invention.It should be understood that
What plasma processing apparatus was merely exemplary, it can include less or more element, or the element
Arrangement may be different from shown in Fig. 2.
Inductive coupled type plasma processing apparatus includes reaction chamber 20, and the lower inside of reaction chamber 20 is treated provided with placement
Handle the pedestal (ESC) 21 of substrate, pedestal 21 can connect RF bias power source (not shown), so as to increase plasma with
The energy of substrate collision.The bottom of reaction chamber 20 is connected with external exhaust apparatus such as vavuum pump (not shown), to
By used reacting gas and bi-product gas extraction chamber 20 in processing procedure.Vertically set on the roof of reaction chamber 20
Insulating sleeve 22 is equipped with, insulating sleeve 22 with reaction chamber 20 by connecting.The material of insulating sleeve 22 is generally ceramics or stone
The dielectric materials such as English.The top of insulating sleeve 22 can be provided with air inlet, for introducing the process gas needed for corona treatment, this
Air inlet is arranged at insulating sleeve center of top in embodiment.Kept in insulating sleeve 22 and identical vacuum in reaction chamber 20
Environment.The outer sheath of insulating sleeve 22 is provided with the Faraday shield 23 of ground connection.Incorporated by reference to reference picture 3a and 3b, Faraday shield
23 include conductive cylindrical body 233, upper flange 231, and lower flange 232.Wherein, formed in cylindrical body 233 along its circle
Multiple axially extending elongated slots of week distribution.As shown in Figure 3 a, the length of these elongated slots can be less than the height of cylindrical body, then
The top and bottom of cylindrical body 233 are still circumferentially continuous；And as shown in Figure 3 b, the length of these elongated slots can also wait
In the height of cylindrical body, cylindrical body 233 is thus cut into more independent support columns.Please continue to refer to Fig. 3 a and 3b,
Upper flange 231 is connected with the upper end of cylindrical body 233 in the present invention, is the loop configuration of closure；Lower flange 232 and cylindrical body
233 lower end connection, it is the loop configuration of non-conductive closure.It should be noted that " ring junction described in the present invention
Structure " is simultaneously not specific to column construction of the cross section for close ring, but refers to cylindricality knot of the cross section for close ring or non-close ring
Structure.Not close ring mentioned here can be only one split ring being open or the split ring with multiple openings.
For latter, the actual column construction for spaced multiple fan rings of loop configuration.Therefore it is " non-conductive or non-closed
Loop configuration " be defined as non-conductive loop configuration or non-closed loop configuration, for example, lower flange can be it is non-conductive but
The loop configuration of closure or inc loop configuration.
Please continue to refer to Fig. 2, the outside winding inductive coupler coils 24 of cylindrical body 233, the inductive coupler coils 24 can
It is connected by adaptation (not shown) with radio frequency power source (not shown), radio frequency power source provides radio-frequency current to sensing coupling
Zygonema circle 24 and coil 24 is produced alternating magnetic field, the alternating magnetic field produces induction field, so as to by the technique in reaction chamber
Gas is excited into plasma.Because Faraday shield 23 is located between insulating sleeve and coil 24 and is grounded, can play
Mask capacitor electric field, reduce the effect of field coupling, so as to reduce bombardment of the plasma to insulating sleeve.On the other hand,
Due to the loop configuration that lower flange 232 is non-conductive closure, itself do not close or non-conductive, so working as inductive coupler coils
In when being passed through radio-frequency current and producing alternating magnetic field, induced-current will not be produced in lower flange 232, also would not be by the induced-current
Produce with the reverse magnetic field of alternating magnetic field and weaken the alternating magnetic field, therefore improve magnetic field induction coupling efficiency.
Fig. 3 a are the schematic diagram of the Faraday shield of one embodiment of the invention.As illustrated, lower flange 232 is closure
And non-conductive loop configuration, the material of lower flange 232 are preferably PEI (Ultem) or polyimides (Vespel),
Suppress the weakening of alternating magnetic field by the change of the material of lower flange.Preferably, the upper flange 231 of closure is also non-conductive ring
Shape structure, then induced-current will not be also produced in upper flange 231, further prevent alternating magnetic field caused by coil from being weakened.
Cylindrical body 233 is preferably that metal material is made, to improve the support performance of whole Faraday shield.It should be noted that
When cylindrical body 233 is divided into more conductive supporting posts by length and its multiple elongated slot of height identical, these conductive supportings
Post is both needed to ground connection to realize that capacitive electric field induction shields.
Fig. 3 b are the schematic diagram of the Faraday shield of another embodiment of the present invention.As illustrated, lower flange 232 is conductive
, and non-closed loop configuration, wherein forming the radial slit 232a of at least one width through the annular of lower flange 232.
In the present embodiment, radial slit 232a is multiple.Thus, although lower flange 232 is conductive, such as it is made up of metal material,
Because it by radial slit 232a is divided into multiple discontinuous fan rings, closed-loop path can not be formed, would not also produce sensing
Electric current and the alternating magnetic field for weakening coil.In the present embodiment, whole Faraday shield can be conductive material such as metal system
Into.
As known from the above, by the way that the lower flange 232 of Faraday shield is designed as into non-conductive or non-closed ring junction
Structure, can improve the efficiency of electromagnetic induction coupling, while upper flange 231 is remained closed into structure and causes Faraday shield still
Be formed as an entirety, stability and installation convenience are more preferably.
Fig. 4 shows the schematic diagram of the inductive coupled type plasma processing apparatus of another embodiment of the present invention.As schemed
Show, the roof of reaction chamber 40 is provided with insulation cover plate 45, and insulation cover plate 45 is usually ceramic dielectric material, has and reaction chamber
The opening of connection.The lower inside of reaction chamber 40 is provided with the pedestal (ESC) 41 for placing pending substrate.The bottom of reaction chamber 40 with
External exhaust apparatus such as vavuum pump (not shown) is connected, in processing procedure by used reacting gas and by-product
Product gas extraction chamber 40.Insulating sleeve 42 is vertically installed with insulation cover plate 45, insulating sleeve 42 passes through insulation cover plate
45 and the opening of reaction chamber roof connected with reaction chamber 40.The material of insulating sleeve 42 is generally the dielectrics such as ceramics or quartz
Material.The top of insulating sleeve 42 can be provided with air inlet, for introducing the process gas needed for corona treatment, in the present embodiment
Air inlet is arranged at insulating sleeve center of top.Kept in insulating sleeve 42 and identical vacuum environment in reaction chamber 40.Absolutely
The outer sheath of edge sleeve 42 is provided with the Faraday shield 43 of ground connection.Faraday shield 43 includes cylindrical body, closed annular knot
The upper flange of structure, and the lower flange 32 of non-closed conductive loop configuration.Inductive coupler coils 44 are wound in Faraday shield
The outside of the cylindrical body of part, the inductive coupler coils 44 can be by adaptation (not shown) and radio frequency power sources (in figure not
Show) connection, radio frequency power source provides radio-frequency current makes coil 44 produce alternating magnetic field, the alternation magnetic to inductive coupler coils 44
Field produces induction field, so as to which the process gas in reaction chamber is excited into plasma.Because Faraday shield 43 is set
Between insulating sleeve 42 and coil 44 and it is grounded, mask capacitor electric field can be played, reduce the effect of field coupling, so as to
Reduce bombardment of the plasma to insulating sleeve.On the other hand, the second inductance-coupled coil 46 is set on insulation cover plate 45, the
Two inductance-coupled coils 46 are nested in outside the first inductance-coupled coil 44, and it can pass through adaptation (not shown) and radio frequency work(
Rate source (not shown) connection, preferably, the adaptation and the supporting connection of radio frequency power source and the institute of the first inductance-coupled coil 45
It is identical, in adaptation have power divider the radio-frequency power from same radio frequency power source is distributed to two inductives
Coil, it will not so cause being mutually coupled for two coils.It may also set up in processing chamber housing side wall below insulation cover plate 45
Process gas input port (not shown), by being passed through radio-frequency current below insulation cover plate 45 to the second inductance-coupled coil 46
The process gas that the gas input port of reaction chamber side wall is imported is excited as plasma.In plasma process,
First inductance-coupled coil 44 and the second inductance-coupled coil 46 act on simultaneously, can form the plasma in two regions, both
The density of required plasma can be provided, plasma uniformity can be adjusted again.
Because insulation cover plate 45 is usually that frangible ceramic dielectric material is made, it is necessary to ensure that its stabilization is set using fixture
It is placed on the roof of reaction chamber 40.In the present embodiment, fixture 47 is provided with the opening of insulation cover plate 45.Fixture 47 is same
When may also function as the effect of supports insulative sleeve 42 and Faraday shield 43.Due under fixture 47 and Faraday shield
Flange neighbouring first and second inductive coupler coils, therefore the two coils are produced to reduce fixture and lower flange simultaneously
The weakening effect of magnetisation field, lower flange is designed as non-conductive or non-closed loop configuration, and/or by anchor designs is tool
There is non-conductive or non-closed loop configuration." non-conductive or non-closed ring junction same as the previously described embodiments, described here
Structure " is defined as non-conductive loop configuration or non-closed loop configuration, and " loop configuration " is defined as including close ring and opening
The column construction of ring.
The lower flange of the Faraday shield of the present embodiment can be closure, non-conductive loop configuration, or conductive,
Non-closed loop configuration.Faraday shield configuration is same as the previously described embodiments, herein without adding repeating.Wherein when lower flange is
During closure, non-conductive loop configuration, even if the upper flange of closure is conductive closed loop configuration, because its distance second senses
Coupling coil 46 it is distant, it is also limited to the weakening effect of alternating magnetic field caused by two coils.
Fig. 4 is continued referring to, fixture 47 includes upper ring 47a and lower ring 47b, and upper ring and a lower ring passes through fastener such as pin
Connection.The roof of reaction chamber has compared with lower part and upper section, lower ring 47b bottom supporting roof relatively lower part,
Upper section of the bottom surface of insulation cover plate then with chamber roof contacts.Upper ring and a lower ring all has a depressed part, the two rings it is recessed
Sunken portion, which is collectively forming, can make insulation cover plate 45 be embedded in receiving portion therein, so as to which the stabilization of insulation cover plate 45 is arranged at
On chamber roof.In addition, lower ring 47b internal diameter is less than upper ring 47a internal diameter, insulating sleeve 42 is supported on lower ring 47b, simultaneously
Below with upper ring 47a inner circumferential interplanar distance at least 1mm interval to prevent insulating sleeve because expanding or extruding outside insulating sleeve 42
And material breaks.The lower flange of Faraday shield 43 is supported on ring 47a.Preferably, in lower ring 47b and insulation cover plate 45
The contact surface of bottom surface is provided with sealing ring, such as Teflon ring, also is provided with contact surfaces of the upper ring 47a with the top surface of insulation cover plate 45
Sealing ring, such as O-ring, to prevent the material breaks of insulation cover plate 45.Because upper ring 47a is more close to the first and second sensing couplings
Zygonema circle, upper ring 47a is designed as non-conductive loop configuration in the present embodiment, such as by PEI (Ultem) or polyamides
Imines (Vespel) is made, and makes wherein not produce induced-current because of the alternating magnetic field of the first and second inductive coupler coils.Separately
On the one hand, lower ring 47b is then designed as non-conductive or non-closed loop configuration, for example, it can be closure, non-conductive ring
Shape structure, is such as made of ceramic materials；It can also be conductive, non-closed loop configuration.Instantly ring 47b is conductive, non-
During the loop configuration of closure, wherein forming at least one radial slit through the lower ring width.Pass through above-mentioned lower ring structure
The weakening effect to alternating magnetic field can further be prevented.
Pass through the design of above Faraday shield and fixture so that Faraday shield and/or fixture have resistance
The characteristic of induced-current and the variation magnetic field reverse with alternating magnetic field is only produced, improves the efficiency of magnetic field induction coupling.
Although the present invention is disclosed as above with preferred embodiment, right many embodiments are illustrated only for the purposes of explanation
, the present invention is not limited to, those skilled in the art can make without departing from the spirit and scope of the present invention
Some changes and retouching, the protection domain that the present invention is advocated should be to be defined described in claims.
Claims (15)
- A kind of 1. inductively type plasma processing apparatus, it is characterised in that including：Reaction chamber, it is provided with the pedestal for loading pending substrate；With the insulating sleeve connected at the top of the reaction chamber；The Faraday shield on the outside of the insulating sleeve and being grounded is enclosed on, it includes the cylindrical body of conduction, with the tubular The upper flange of body upper end connection, the lower flange being connected with the lower end of the cylindrical body, wherein being formed in the cylindrical body The length of multiple axially extending elongated slots and the elongated slot along its circle distribution is less than or equal to the height of the cylindrical body, institute State loop configuration of the upper flange for closure；AndThe first inductive coupler coils being wound on the cylindrical body；Wherein, the lower flange is non-conductive or non-closed loop configuration, to be passed through in first inductive coupler coils When radio-frequency current produces alternating magnetic field, the lower flange does not produce induced-current.
- 2. inductively type plasma processing apparatus according to claim 1, it is characterised in that the lower flange is to close Close and non-conductive loop configuration.
- 3. inductively type plasma processing apparatus according to claim 2, it is characterised in that the upper flange is to close Close and non-conductive loop configuration.
- 4. inductively type plasma processing apparatus according to claim 1, it is characterised in that the lower flange is to lead Electric and non-closed loop configuration, wherein the radial direction for forming the width of at least one loop configuration through the lower flange is narrow Seam.
- 5. inductively type plasma processing apparatus according to claim 4, it is characterised in that the lower flange and upper Flange is conductive loop configuration.
- A kind of 6. inductively type plasma processing apparatus, it is characterised in that including：Reaction chamber, it is provided with loading the pedestal of pending substrate；Insulation cover plate, located at the reaction chamber roof and with the opening that is connected with the reaction chamber；It is used for the fixture for fixing the insulation cover plate located at the opening；It is vertically installed on the insulation cover plate by the insulating sleeve for being open and being connected with the reaction chamber；The Faraday shield on the outside of the insulating sleeve and being grounded is enclosed on, it includes the cylindrical body of conduction, with the tubular The upper flange of body upper end connection, the lower flange for being connected and being located on the fixture with the lower end of the cylindrical body, wherein Formed in the cylindrical body along multiple axially extending elongated slots of its circle distribution and the length of the elongated slot and be less than or equal to institute The height of cylindrical body is stated, the upper flange is the loop configuration of closure；The first inductive coupler coils being wound on the cylindrical body；AndIt is arranged at the second inductive coupler coils being nested on the insulation cover plate outside first inductive coupler coils；Wherein, the lower flange is non-conductive or non-closed loop configuration, and the fixture has non-conductive or non-closed Loop configuration, alternating magnetic field is produced to be passed through radio-frequency current in first inductive coupler coils and the second inductive coupler coils When, induced-current is not produced in the non-conductive or non-closed loop configuration of the lower flange and the fixture.
- 7. inductively type plasma processing apparatus according to claim 6, it is characterised in that the lower flange is to close Close and non-conductive loop configuration.
- 8. inductively type plasma processing apparatus according to claim 7, it is characterised in that the upper flange is to close Close and non-conductive loop configuration.
- 9. inductively type plasma processing apparatus according to claim 6, it is characterised in that the lower flange is to lead Electric and non-closed loop configuration, wherein the radial direction for forming the width of at least one loop configuration through the lower flange is narrow Seam.
- 10. inductively type plasma processing apparatus according to claim 9, it is characterised in that the lower flange and Upper flange is conductive loop configuration.
- 11. inductively type plasma processing apparatus according to claim 6, it is characterised in that the fixture bag The upper ring and a lower ring connected by fastener is included, the upper ring and a lower ring all there is depression to make the insulation cover plate to be collectively forming It is embedded in receiving portion therein.
- 12. inductively type plasma processing apparatus according to claim 11, it is characterised in that the upper ring is to close Close and non-conductive loop configuration.
- 13. inductively type plasma processing apparatus according to claim 12, it is characterised in that the lower ring is to close Close and non-conductive loop configuration.
- 14. inductively type plasma processing apparatus according to claim 12, it is characterised in that the lower ring is to lead Electric and non-closed loop configuration, wherein forming at least one radial slit through the lower ring width.
- 15. inductively type plasma processing apparatus according to claim 6, it is characterised in that first sensing Coupling coil and second inductive coupler coils are connected by power divider with same radio frequency power source.
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| CN201410836742.8A CN105789011B (en) | 2014-12-24 | 2014-12-24 | Inductively type plasma processing apparatus |
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| CN201410836742.8A CN105789011B (en) | 2014-12-24 | 2014-12-24 | Inductively type plasma processing apparatus |
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| CN107301943A (en) * | 2017-07-27 | 2017-10-27 | 北京北方华创微电子装备有限公司 | Faraday shield and reaction chamber |
| CN110536530A (en) * | 2018-09-20 | 2019-12-03 | 北京北方华创微电子装备有限公司 | Magnetic enhances Faraday shield configuration and inductively coupled plasma source |
| CN115376870A (en) * | 2021-05-18 | 2022-11-22 | 江苏鲁汶仪器有限公司 | Ion source device with adjustable plasma density |
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| TW403959B (en) * | 1996-11-27 | 2000-09-01 | Hitachi Ltd | Plasma treatment device |
| US6447637B1 (en) * | 1999-07-12 | 2002-09-10 | Applied Materials Inc. | Process chamber having a voltage distribution electrode |
| JP2002237486A (en) * | 2001-02-08 | 2002-08-23 | Tokyo Electron Ltd | Apparatus and method of plasma treatment |
| KR101001743B1 (en) * | 2003-11-17 | 2010-12-15 | 삼성전자주식회사 | Ionized physical vapor deposition apparatus using helical self-resonant coil |
| DE112006002412T5 (en) * | 2005-09-09 | 2008-07-17 | ULVAC, Inc., Chigasaki | Ion source and plasma processing device |
| SG162642A1 (en) * | 2009-01-06 | 2010-07-29 | Frontken Singapore Pte Ltd | Techniques for maintaining a substrate processing system |
| CN102465260A (en) * | 2010-11-17 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber assembly and semiconductor processing equipment with application of same |
| KR20130072941A (en) * | 2011-12-22 | 2013-07-02 | 삼성전자주식회사 | Plasma etching apparatus |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |