CN107256822B - Top electrode assembly and reaction chamber - Google Patents
Top electrode assembly and reaction chamber Download PDFInfo
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- CN107256822B CN107256822B CN201710623176.6A CN201710623176A CN107256822B CN 107256822 B CN107256822 B CN 107256822B CN 201710623176 A CN201710623176 A CN 201710623176A CN 107256822 B CN107256822 B CN 107256822B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32504—Means for preventing sputtering of the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
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- Public Health (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of top electrode assembly and reaction chamber, it includes coil, is provided with RF power fed-in point on the coil, which is located at the position in addition to endpoint of coil, and the endpoint ground connection of coil, coil is formed into multiple coil branches parallel with one another from RF power fed-in point.Reaction chamber provided by the invention can reduce Potential distribution difference present on coil, so as to improve the distributing homogeneity of plasma, and then process uniformity can be improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular, to a kind of top electrode assembly and reaction chamber.
Background technique
In semiconductor fabrication process, inductively coupled plasma body (ICP, Inductive Coupled Plasma) occurs
Device can obtain highdensity plasma under lower operating air pressure, and structure is simple, low cost, therefore answer extensively
For plasma etching (IC), physical vapour deposition (PVD) (PVD), plasma activated chemical vapour deposition (CVD), mems
In the techniques such as (MEMS) and light emitting diode (LED) of uniting.
During carrying out technique, in order to improve the quality of product, before implementing depositing operation, first have to chip
It carries out prerinse (Preclean), with impurity such as the oxides that removes wafer surface.The basic principle of general pre-cleaning cavity
It is: excites the purge gas of the argon gas, helium or hydrogen that are passed through wash chamber etc. to form plasma, to chip
Chemical reaction and physical bombardment are carried out, so as to remove the impurity of wafer surface.
Fig. 1 is a kind of existing cross-sectional view of pre-cleaning cavity.Referring to Fig. 1, pre-cleaning cavity includes cavity 1, at this
The top of cavity 1 is provided with medium cylinder 2, and is surrounded with radio-frequency coil 3 around the medium cylinder 2, and the radio-frequency coil 3 is logical
It crosses adaptation 4 to be electrically connected with upper radio-frequency power supply 5, upper radio-frequency power supply 5 is used to load radio-frequency power to radio-frequency coil 3, by radio frequency
The electromagnetic field that coil 3 generates can be fed into cavity 1 by medium cylinder 2, with excite the process gas in cavity 1 formed etc. from
Daughter.Also, it is additionally provided with pedestal 6 in cavity 1, is used for bearing wafer 7.Also, pedestal 6 is penetrated under by lower adaptation 8
Frequency power 9 is electrically connected, and lower radio-frequency power supply 9 is used to load radio frequency back bias voltage to pedestal 6, to attract plasma etching substrate table
Face.
It is electrically connected as shown in Fig. 2, the input terminal of above-mentioned radio-frequency coil 3 is used as RF power fed-in point with upper adaptation 4, it is above-mentioned to penetrate
The output end of frequency coil 3 is grounded.This can have the following problems: due to the standing wave effect of high frequency, the electricity of each circle of radio-frequency coil 3
There are biggish differences for bit distribution, and there is also biggish difference, this species diversity for the current potential between the different circles of radio-frequency coil 3
It will cause and be unevenly distributed in reaction chamber by the electromagnetic field that radio-frequency coil 3 generates, to cause the distribution of plasma equal
Even property is lower, and then influences process uniformity.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, propose a kind of top electrode assembly and
Reaction chamber can reduce Potential distribution difference present on coil, so as to improve the distributing homogeneity of plasma,
And then process uniformity can be improved.
A kind of top electrode assembly is provided to achieve the purpose of the present invention, including coil is provided with power on the coil
Load point, the RF power fed-in point are located at the position in addition to endpoint of the coil, and the endpoint ground connection of the coil, with
The coil is formed into multiple coil branches parallel with one another from the RF power fed-in point.
Preferably, the level assembly that powers on further includes medium cylinder, and the coil encircling is and described around the medium cylinder
Coil is multiturn cylindrical helical volume body coils, and
The coil forms the first coil branch being located above the RF power fed-in point and position from the RF power fed-in point
The second coil branch below the RF power fed-in point.
Preferably, the value range of the ratio of the total length of the length and coil of second coil branch is 0.9/
5.5 between~1.1/5.5.
Preferably, the ratio of the total length of the length and coil of second coil branch is 1.1/5.5,1.05/
5.5 or 1/5.5.
Preferably, the coil is single-turn circular coil.
Preferably, the first end of the coil and/or the second end of the coil are grounded by impedance configuration device, are passed through
The impedance magnitude of the different impedance configuration devices is set, to keep the current direction of two coil branches identical or phase
Instead.
Preferably, the impedance-matching device includes tunable capacitor, and the capacitance range of the tunable capacitor is 0~
1000pF。
Preferably, the top electrode assembly further includes adaptation and power source, and the power source is existed by the adaptation
It is electrically connected at the RF power fed-in point with the coil；
The impedance configuration device is integrated in the adaptation.
As another technical solution, the present invention also provides a kind of reaction chamber, including provided by the invention above-mentioned power on
Pole component；
The reaction chamber further includes Faraday shield, and the Faraday shield is circumferentially positioned at the medium cylinder
Inside, and the Faraday shield includes conductive ferrule, is formed with and cracks on the conductive ferrule；
Described crack is cracked including the first son, and first son cracks along the circumferencial direction setting of the conductive ferrule, and
Angle is formed between the axis of the conductive ferrule, to by increasing electromagnetic field on the circumferencial direction of the conductive ferrule
Electric field component coupling efficiency, to increase total coupling efficiency of the electromagnetic field.
Preferably, the upper surface of the Faraday shield is higher than the upper surface of the medium cylinder；The Faraday shield
The lower end surface of part is lower than the lower end surface of the medium cylinder.
Preferably, the reaction chamber is pre-cleaning cavity.
As another technical solution, the present invention also provides a kind of semiconductor processing equipment, including it is provided by the invention on
State reaction chamber.
The invention has the following advantages:
RF power fed-in point is arranged at the position in addition to endpoint of coil top electrode assembly provided by the invention,
And the endpoint ground connection of the coil, coil is formed into multiple coil branches parallel with one another from the RF power fed-in point, this can subtract
Potential distribution difference on small coil, so as to improve the distributing homogeneity of plasma, and then it is uniform that technique can be improved
Property.In addition, can be reduced on coil on the whole by the way that RF power fed-in point to be arranged at the position in addition to endpoint of coil
Voltage, so as to reduce the bombardment of the ion pair medium cylinder in plasma, to reduce the indoor particle of reaction chamber
Pollution.
Reaction chamber provided by the invention can be improved by using above-mentioned top electrode assembly provided by the invention
The distributing homogeneity of gas ions, so as to improve process uniformity.
Detailed description of the invention
Fig. 1 is a kind of existing cross-sectional view of pre-cleaning cavity；
Fig. 2 is the position view of the RF power fed-in point of radio-frequency coil；
Fig. 3 A is a kind of structure chart of top electrode assembly provided in an embodiment of the present invention；
Fig. 3 B is another structure chart of top electrode assembly provided in an embodiment of the present invention；
Fig. 4 A is the wafer engraving depth profile that technique acquisition is performed etching using coil in the prior art；
Fig. 4 B is the wafer engraving depth distribution that technique acquisition is performed etching using one of embodiment of the present invention coil
Figure；
Fig. 4 C is the wafer engraving depth point that technique acquisition is performed etching using another coil in the embodiment of the present invention
Butut；
Fig. 4 D is the wafer engraving depth point that technique acquisition is performed etching using another coil in the embodiment of the present invention
Butut；
Fig. 4 E is the wafer engraving depth point that technique acquisition is performed etching using another coil in the embodiment of the present invention
Butut；
Fig. 5 is the cross-sectional view of reaction chamber provided in an embodiment of the present invention；
Fig. 6 is the structure chart of Faraday shield used in the embodiment of the present invention.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The top electrode assembly and reaction chamber of offer are described in detail.
Fig. 3 A is please referred to, top electrode assembly provided in this embodiment includes coil 10, is provided with power on the coil 10
Load point 103 is located at the position in addition to endpoint (first end 101 and second end 102) of coil 10.Also, coil 10
Endpoint ground connection, above-mentioned coil 10 forms multiple coil branches parallel with one another from RF power fed-in point 103 as a result,.Radio-frequency power supply
12 are electrically connected by adaptation 11 with above-mentioned RF power fed-in point 103, for being penetrated by the RF power fed-in point 103 to the load of coil 10
Frequency power.
As shown in Figure 3B, in the present embodiment, powering on level assembly further includes medium cylinder 22, and the RF energy on coil 10 is logical
It crosses in the 22 feed-in reaction chamber of medium cylinder.The medium cylinder 22 is in ring body, and coil 10 is multiturn cylindrical helical volume body coils, and
It is looped around around the medium cylinder 22.In the present embodiment, RF power fed-in point 103 is one, and removes first end positioned at coil 10
101 with second end 102 except a certain specified location so that the coil 10 forms two coils from the RF power fed-in point 103
Branch, branch are as follows: first coil branch 104 and the second coil branch 105.Wherein, first coil branch 104 is located at RF power fed-in
103 top of point；Second coil branch 105 is located at 103 lower section of RF power fed-in point.
By the way that coil 10 to be divided into Liang Ge coil branch parallel with one another, can reduce on every circle in each coil branch
Potential distribution difference and different circle between potential difference, reacted so as to improve the electromagnetic field generated by coil 10
The indoor distributing homogeneity of chamber, and then the distributing homogeneity of plasma can be improved, improve process uniformity.In addition, passing through
RF power fed-in point 103 is arranged at the position in addition to endpoint of coil 10, the electricity on coil 10 can be reduced on the whole
Pressure, so as to reduce the bombardment of the ion pair medium cylinder 22 in plasma, so that it is dirty to reduce the indoor particle of reaction chamber
Dye.
It in practical applications, can be by changing position of the RF power fed-in point 103 on coil 10, to adjust by coil 10
The electromagnetic field of generation is in the indoor distribution situation of reaction chamber.It can be come by the length of the second different coil branch 105 of setting
Change position of the RF power fed-in point 103 on coil 10, it is preferred that the total number of turns of coil 10 is 5.5, and the second coil branch
The value range of the ratio of the total length (unit is circle) of 105 length (unit is circle) and coil 10 is in 0.9/5.5~1.1/
Between 5.5.Using the above-mentioned ratio within the scope of this, preferable magnetic distribution uniformity can be obtained.
It is below technique to be performed etching using the coil in coil in the prior art and the embodiment of the present invention, and use
The coil of the position of different capacity load point in the embodiment of the present invention performs etching the comparative test of technique.In the comparative test
In, the total number of turns of coil 10 is 5.5.
The wafer engraving depth distribution for performing etching technique acquisition using coil in the prior art is as shown in Figure 4 A, in crystalline substance
On piece surface, etching depth contour formula decentered distribution in gradient, so that etching homogeneity is lower, and generally 3% or so, do not have
Reach technique and requires (2%).In addition, formula decentered distribution may lead chip surface damage to etching depth contour in gradient
Problem.
Using the coil 10 in the embodiment of the present invention, and make the length of the second coil branch 105 and the total length of coil 10
Ratio be 1.15/5.5, the wafer engraving for performing etching technique acquisition using the coil 10 of 103 position of RF power fed-in point is deep
As shown in Figure 4 B, etching depth contour still formula decentered distribution in gradient, etching homogeneity is lower, and may for degree distribution
The problem of causing wafer surface to be damaged.
Using the coil 10 in the embodiment of the present invention, and make the length of the second coil branch 105 and the total length of coil 10
Ratio be 1.1/5.5 or 1.05/5.5, technique is performed etching using the coil 10 of both 103 positions of RF power fed-in point and is obtained
As depicted in figs. 4 c and 4d, etching depth contour tends to be distributed with one heart the wafer engraving depth distribution obtained, and etching homogeneity has
It improves and (can reach 2%), so as to meet technique requirement, and can be damaged to avoid wafer surface.
Using the coil 10 in the embodiment of the present invention, and make the length of the second coil branch 105 and the total length of coil 10
Ratio be 1/5.5, using the coil 10 of this 103 position of RF power fed-in point perform etching technique acquisition wafer engraving depth
As shown in Figure 4 E, the concentric distribution situation of etching depth contour is best for distribution.
In addition, in the present embodiment, as shown in Figure 3B, the first end 101 of coil 10 is grounded by impedance configuration device 13,
And second end 102 is directly grounded.By setting the impedance magnitude of impedance configuration device 13, to make first coil branch 104 and the
The current direction of two coil branch 105 is identical or opposite.Specifically, the lower end ground connection of first coil branch 104, upper end is function
Rate load point 103, thus the electric current in first coil branch 104 is flowed from RF power fed-in point 103 to the lower end of ground connection.If making to hinder
The impedance of anti-configuration device 13 is sufficiently large, then connection impedance of the electric current in the second coil branch 105 from the second coil branch 105
The upper end (i.e. first end 101) of configuration device 13 is flowed towards RF power fed-in point 103, as a result, first coil branch 104 and second
The current direction of coil branch 105 is identical.Conversely, if keeping the impedance of impedance configuration device 13 sufficiently small, the second coil branch
The upper end of connection impedance configuration device 13 of the electric current from RF power fed-in point 103 towards the second coil branch 105 in 105 is flowed,
The current direction of first coil branch 104 and the second coil branch 105 is opposite as a result,.Therefore, by setting impedance configuration device
13 impedance magnitude is allowed to sufficiently large or sufficiently small, can change the current direction in the second coil branch 105.
If the current direction of first coil branch 104 and the second coil branch 105 on the contrary, if respectively by first coil branch
104 and second two electromagnetic fields generating of coil branch 105 cancel out each other, this can be poor to existing magnetic field strength between
It is different to compensate, to further improve the distributing homogeneity in the superposition magnetic field formed by above-mentioned two electromagnetic field.On but
The magnetic field strength in superposition magnetic field can be reduced by stating cancelling out each other for two electromagnetic fields, so that plasma density is reduced, it therefore, should
Mode is suitable for the not high technique of plasma density requirements.And technique higher for plasma density requirements, then
First coil branch 104 can be made identical with the current direction of the second coil branch 105, to improve plasma density.
Above-mentioned impedance configuration device 13 may include tunable capacitor.Before carrying out technique, it can set according to specific needs
The size of tunable capacitor is set, to obtain required impedance value, to improve the flexibility of impedance adjusting.Above-mentioned tunable capacitor
Adjustable extent is in 0~1000pF.
In addition, above-mentioned impedance configuration device 13 play determine current direction on the basis of, can also be suitable by selecting
Impedance magnitude, come make adaptation 11 be easier realize impedance matching.For example, when the total number of turns of coil 10 is 5.5, the second coil
When the ratio of the total length of the length and coil 10 of branch 105 is 1.1/5.5,1.05/5.5 or 1/5.5.Above-mentioned tunable capacitor
Capacitance can be set in the range of 200~500pF, preferably 350pF.
In practical applications, above-mentioned impedance configuration device 13 can integrate in adaptation 11, to reduce the occupancy of equipment
Space.
It should be noted that in the present embodiment, the first end 101 of coil 10 is grounded by impedance configuration device 13, and
Second end 102 is directly grounded, but the present invention is not limited thereto, in practical applications, can also make the first end of coil 10
101 are directly grounded, and second end 102 is grounded by impedance configuration device 13；Alternatively, the first end 101 of coil 10 can also be made
It is grounded respectively by two impedance configuration devices 13 with second end 102；Alternatively, the first end 101 and of coil 10 can also be made
Two ends 102 are directly grounded.
It should also be noted that, in the present embodiment, coil 10 is multiturn cylindrical helical volume body coils, and still, the present invention
It is not limited thereto, in practical applications, coil 10 or single-turn circular coil, and the single-turn circular coil can be ribbon coil
Or cylindrical coil.
Explanation is needed further exist for, in the present embodiment, RF power fed-in point 103 is one, but the present invention not office
It is limited to this, in practical applications, RF power fed-in point 103 is also located at removing for coil 10 for multiple and different RF power fed-in points 103
Position except endpoint is different.In this case, coil 10 can be three or more lines by multiple RF power fed-in points 103 minutes
Branch is enclosed, this can adjust magnetic distribution uniformity with more refining, so as to further increase the distribution of plasma
Uniformity.In addition, each RF power fed-in point 103 needs to be equipped with a set of adaptation 11 and radio frequency for multiple RF power fed-in points 103
Power supply 12.
As another technical solution, as shown in figure 5, the present invention also provides a kind of reaction chambers 21 comprising the present invention
Top electrode assembly provided by the above embodiment.The top electrode assembly includes medium cylinder 22 and the line that is looped around around the medium cylinder 22
Circle 10, wherein medium cylinder 22 is arranged in the side wall 211 of reaction chamber 21；Radio-frequency power supply 12 passes through adaptation 11 and coil 10
On above-mentioned RF power fed-in point 103 electrical connection, for by the RF power fed-in point 103 to coil 10 load radio-frequency power.Radio frequency
Energy passes through in 22 feed-in reaction chamber 21 of medium cylinder.Also, pedestal 24 is additionally provided in reaction chamber 21, the pedestal 24 is logical
Pedestal adaptation 25 to be crossed to be electrically connected with pedestal radio-frequency power supply 26, pedestal radio-frequency power supply 26 is used to load back bias voltage to pedestal 24, with
Attract plasma etching wafer surface.
In the present embodiment, reaction chamber 21 further includes Faraday shield 23, and the Faraday shield 23 is around setting
In the inside of medium cylinder 22, for protecting medium cylinder 22 not by plasma etching, while wafer surface being avoided to sputter out
Residue be attached on the inner wall of medium cylinder 22, so as to improve the energy coupling efficiency of medium cylinder 22, reduce reaction chamber
Particle contamination in room 1.Also, Faraday shield 23 includes conductive ferrule, is formed with and cracks on the conductive ferrule, to keep away
Exempt from Faraday shield 23 and generates eddy-current loss and fever.
By the electromagnetic shielding effect of above-mentioned Faraday shield 23, current potential present in coil 10 can be further decreased
Difference, and quadratic distribution influence can be generated on the distribution of electromagnetic field, so as to further increase the distribution of plasma
Uniformity improves process uniformity.In addition, the physical barriers by Faraday shield 23 act on, metal can be effectively prevented
It is deposited on the inner wall of medium cylinder 22, so as to avoid the reduction of magnetic field coupling efficiency.
In the present embodiment, as shown in fig. 6, it is above-mentioned crack including the first son crack 232 and second son crack 231, wherein
First son cracks 232 to be arranged along the circumferencial direction of above-mentioned conductive ferrule, and is formed angle between the axis of the conductive ferrule, is used
With the coupling efficiency of the electric field component by increase electromagnetic field on the circumferencial direction of conductive ferrule, to increase the total of the electromagnetic field
Coupling efficiency.The angle is 90 °.Above-mentioned first son cracks 232 to be multiple, and uniformly divides along the circumferencial direction of above-mentioned conductive ferrule
Cloth.Second son cracks 231 to be arranged along the axial direction of conductive ferrule, and second son cracks 231 to be multiple, and along above-mentioned conductive ferrule
Circumferencial direction be uniformly distributed.
The electromagnetic field generated by coil 10 can be divided into magnetic-field component in the axial direction of conductive ferrule and conductive ferrule
Electric field component on circumferencial direction.Magnetic-field component in the axial direction of conductive ferrule can be cracked 231 feed-ins by above-mentioned second son
In reaction chamber 21, meanwhile, electric field component on the circumferencial direction of conductive ferrule is cracked 232 feed-ins reaction by above-mentioned first son
In chamber 21, to increase total coupling efficiency of electromagnetic field.
It should be noted that in practical applications, above-mentioned first son can also be only set and crack 232, and first son is opened
Seam 232 is tilted relative to the axis of conductive ferrule, it is preferred that the first son, which cracks, forms folder between 232 and the axis of conductive ferrule
Angle is preferably 45 °.In this way, son of the magnetic-field component on the inclined direction that first son cracks 232 in the axial direction of conductive ferrule
Component can be cracked in 232 feed-in reaction chambers 21 by the first son, while the electric field component on the circumferencial direction of conductive ferrule
It can be cracked in 232 feed-in reaction chambers 21 by the first son in the subcomponent on the inclined direction that first son cracks 232.
In practical applications, above-mentioned Faraday shield 23 can be grounded, or can also be with electric potential floating.
Preferably, the upper surface of Faraday shield 23 is higher than the upper surface of medium cylinder 22；Under Faraday shield 23
End face is lower than the lower end surface of medium cylinder 22, to guarantee that the inner surface of medium cylinder 22 is completely covered in Faraday shield 23.In addition, can
The roughening treatment of meltallizing etc. is done, with the inner surface in Faraday shield 23 to prevent the interior table for being attached to Faraday shield 23
Particle on face falls off, and pollutes wafer surface.
In practical applications, reaction chamber can be pre-cleaning cavity.
Preferably, for hydrogeneous pre-cleaning processes, the upper radio-frequency power supply 28 in pre-cleaning cavity can use lower
Frequency (13.56MHz or less), such as 2MHz, this can be such that the excitation of hydrogen atom and ionization degree slows down, to reduce hydrogen atom
The heat released is reacted, with wafer surface so as to realize low temperature pre-cleaning processes.
In conclusion reaction chamber provided in an embodiment of the present invention, by using provided in an embodiment of the present invention above-mentioned
The distributing homogeneity of plasma can be improved in top electrode assembly, so as to improve process uniformity.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (11)
1. a kind of top electrode assembly, including coil, which is characterized in that be provided with RF power fed-in point, the function on the coil
Rate load point is located at the position in addition to first end and second end of the coil, and the first end of the coil and/or institute
The second end for stating coil is grounded by impedance configuration device, the coil is formed from the RF power fed-in point parallel with one another
Liang Ge coil branch；By setting the impedance magnitude of the different impedance configuration devices, to make two coil branches
Current direction is identical or opposite.
2. top electrode assembly according to claim 1, which is characterized in that the top electrode assembly further includes medium cylinder, institute
Coil encircling is stated around the medium cylinder, and the coil is multiturn cylindrical helical volume body coils, and
The coil forms the first coil branch being located above the RF power fed-in point from the RF power fed-in point, and is located at institute
State the second coil branch below RF power fed-in point.
3. top electrode assembly according to claim 2, which is characterized in that the length of second coil branch and the line
The value range of the ratio of the total length of circle is between 0.9/5.5~1.1/5.5.
4. top electrode assembly according to claim 3, which is characterized in that the length of second coil branch and the line
The ratio of the total length of circle is 1.1/5.5,1.05/5.5 or 1/5.5.
5. top electrode assembly according to claim 1, which is characterized in that the coil is single-turn circular coil.
6. top electrode assembly according to claim 1, which is characterized in that the impedance-matching device includes tunable capacitor,
The capacitance range of the tunable capacitor is 0~1000pF.
7. top electrode assembly according to claim 1, which is characterized in that the top electrode assembly further includes adaptation and function
Rate source, the power source are electrically connected at the RF power fed-in point with the coil by the adaptation；
The impedance configuration device is integrated in the adaptation.
8. a kind of reaction chamber, which is characterized in that including top electrode assembly described in claim 2-4 any one；
The reaction chamber further includes Faraday shield, and the Faraday shield is circumferentially positioned at the interior of the medium cylinder
Side, and the Faraday shield includes conductive ferrule, is formed with and cracks on the conductive ferrule；
Described crack is cracked including the first son, first son crack along the conductive ferrule circumferencial direction setting, and with institute
It states and forms angle between the axis of conductive ferrule, to by increasing electricity of the electromagnetic field on the circumferencial direction of the conductive ferrule
The coupling efficiency of field component, to increase total coupling efficiency of the electromagnetic field.
9. reaction chamber according to claim 8, which is characterized in that the upper surface of the Faraday shield is higher than described
The upper surface of medium cylinder；The lower end surface of the Faraday shield is lower than the lower end surface of the medium cylinder.
10. reaction chamber according to claim 8, which is characterized in that the reaction chamber is pre-cleaning cavity.
11. a kind of semiconductor processing equipment, which is characterized in that including reaction chamber described in claim 8-10 any one.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710623176.6A CN107256822B (en) | 2017-07-27 | 2017-07-27 | Top electrode assembly and reaction chamber |
| PCT/CN2018/082678 WO2019019700A1 (en) | 2017-07-27 | 2018-04-11 | Upper electrode assembly, reaction chamber, and semiconductor processing device |
| TW107112447A TWI681693B (en) | 2017-07-27 | 2018-04-11 | Upper electrode element, reaction chamber and semiconductor processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710623176.6A CN107256822B (en) | 2017-07-27 | 2017-07-27 | Top electrode assembly and reaction chamber |
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| Publication Number | Publication Date |
|---|---|
| CN107256822A CN107256822A (en) | 2017-10-17 |
| CN107256822B true CN107256822B (en) | 2019-08-23 |
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| CN201710623176.6A Active CN107256822B (en) | 2017-07-27 | 2017-07-27 | Top electrode assembly and reaction chamber |
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| Country | Link |
|---|---|
| CN (1) | CN107256822B (en) |
| TW (1) | TWI681693B (en) |
| WO (1) | WO2019019700A1 (en) |
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| CN107256822B (en) * | 2017-07-27 | 2019-08-23 | 北京北方华创微电子装备有限公司 | Top electrode assembly and reaction chamber |
| CN109712859B (en) * | 2017-10-25 | 2021-06-08 | 北京北方华创微电子装备有限公司 | Chamber |
| CN110536533A (en) * | 2018-06-07 | 2019-12-03 | 北京北方华创微电子装备有限公司 | Upper electrode system, plasma chamber and method of generating plasma |
| CN110660635B (en) * | 2018-06-29 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN114446761B (en) * | 2022-01-26 | 2024-06-21 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
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Also Published As
| Publication number | Publication date |
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| WO2019019700A1 (en) | 2019-01-31 |
| TWI681693B (en) | 2020-01-01 |
| TW201911977A (en) | 2019-03-16 |
| CN107256822A (en) | 2017-10-17 |
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