CN107256822A - Top electrode assembly and reaction chamber - Google Patents
Top electrode assembly and reaction chamber Download PDFInfo
- Publication number
- CN107256822A CN107256822A CN201710623176.6A CN201710623176A CN107256822A CN 107256822 A CN107256822 A CN 107256822A CN 201710623176 A CN201710623176 A CN 201710623176A CN 107256822 A CN107256822 A CN 107256822A
- Authority
- CN
- China
- Prior art keywords
- coil
- point
- top electrode
- electrode assembly
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32504—Means for preventing sputtering of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of top electrode assembly and reaction chamber, it includes coil, and RF power fed-in point is provided with the coil, and the RF power fed-in point is located at the position in addition to end points of coil, and the end points ground connection of coil, coil is formed to multiple coil branches parallel with one another from RF power fed-in point.The reaction chamber that the present invention is provided, it can reduce Potential distribution difference present on coil, so as to improve the distributing homogeneity of plasma, and then can improve process uniformity.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular it relates to a kind of top electrode assembly and reaction chamber.
Background technology
In semiconductor fabrication process, inductively coupled plasma (ICP, Inductive Coupled Plasma) occurs
Device can obtain highdensity plasma, and simple in construction, low cost under relatively low operating air pressure, therefore extensively should
For plasma etching (IC), physical vapour deposition (PVD) (PVD), plasma activated chemical vapour deposition (CVD), mems
In the technique such as (MEMS) and light emitting diode (LED) of uniting.
During technique is carried out, in order to improve the quality of product, before depositing operation is implemented, first have to chip
Carry out prerinse (Preclean), the impurity such as the oxide to remove wafer surface.The general principle of general pre-cleaning cavity
It is：The purge gas that the argon gas, helium or hydrogen of wash chamber etc. will be passed through excites to form plasma, with to chip
Chemically reacted and physical bombardment, so as to remove the impurity of wafer surface.
Fig. 1 is a kind of existing sectional view of pre-cleaning cavity.Referring to Fig. 1, pre-cleaning cavity includes cavity 1, at this
The top of cavity 1 is provided with medium cylinder 2, and is surrounded with radio-frequency coil 3 around medium cylinder 2, and the radio-frequency coil 3 leads to
Cross adaptation 4 to electrically connect with upper radio-frequency power supply 5, upper radio-frequency power supply 5 is used to load radio-frequency power to radio-frequency coil 3, by radio frequency
The electromagnetic field that coil 3 is produced 2 can be fed into cavity 1 by medium cylinder, with excite the process gas in cavity 1 to be formed etc. from
Daughter.Also, pedestal 6 is additionally provided with cavity 1, for bearing wafer 7.Also, pedestal 6 is penetrated by lower adaptation 8 with
Frequency power 9 is electrically connected, and lower radio-frequency power supply 9 is used to load radio frequency back bias voltage to pedestal 6, to attract plasma etching substrate table
Face.
As shown in Fig. 2 the input of above-mentioned radio-frequency coil 3 is electrically connected as RF power fed-in point with upper adaptation 4, it is above-mentioned to penetrate
The output head grounding of frequency coil 3.This can have problems with：Due to the standing wave effect of high frequency, the electricity of each circle of radio-frequency coil 3
There is also larger difference, this species diversity for the current potential that bit distribution exists between larger difference, and the different circles of radio-frequency coil 3
The electromagnetic field produced by radio-frequency coil 3 skewness in reaction chamber can be caused, so as to cause the distribution of plasma equal
Even property is relatively low, and then influences process uniformity.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that a kind of top electrode assembly and
Reaction chamber, it can reduce Potential distribution difference present on coil, so as to improve the distributing homogeneity of plasma,
And then process uniformity can be improved.
To realize that the purpose of the present invention provides a kind of top electrode assembly, including coil is provided with power on the coil
Load point, the RF power fed-in point is located at the position in addition to end points of the coil, and the end points ground connection of the coil, with
The coil is formed to multiple coil branches parallel with one another from the RF power fed-in point.
It is preferred that, the upper electric level assembly also includes medium cylinder, and the coil encircling is and described around medium cylinder
Coil is multiturn cylindrical helical volume body coils, and
The coil is located at the first coil branch above the RF power fed-in point, and position from RF power fed-in point formation
The second coil branch below the RF power fed-in point.
It is preferred that, the span of the ratio of the length of the second coil branch and the total length of the coil is 0.9/
Between 5.5~1.1/5.5.
It is preferred that, the ratio of the length of the second coil branch and the total length of the coil is 1.1/5.5,1.05/
5.5 or 1/5.5.
It is preferred that, the coil is single-turn circular coil.
It is preferred that, the second end of the first end of the coil and/or the coil is grounded by impedance configuration device, is passed through
The impedance magnitude of the different impedance configuration devices of setting, to make the sense of current of two coil branches identical or phase
Instead.
It is preferred that, the impedance-matching device includes tunable capacitor, the capacitance scope of the tunable capacitor for 0~
1000pF。
It is preferred that, the top electrode assembly also includes adaptation and power source, and the power source is existed by the adaptation
Electrically connected at the RF power fed-in point with the coil；
The impedance configuration device is integrated in the adaptation.
As another technical scheme, the present invention also provides a kind of reaction chamber, including the above-mentioned upper electricity that the present invention is provided
Pole component；
The reaction chamber also includes Faraday shield, and the Faraday shield is circumferentially positioned at the medium cylinder
Inner side, and the Faraday shield includes conductive ferrule, is formed with and cracks on the conductive ferrule；
Described crack is cracked including the first son, the circumferencial direction setting that first son cracks along the conductive ferrule, and
Angle is formed between the axis of the conductive ferrule, to by increasing electromagnetic field on the circumferencial direction of the conductive ferrule
Electric field component coupling efficiency, to increase total coupling efficiency of the electromagnetic field.
It is preferred that, upper surface of the upper surface higher than medium cylinder of the Faraday shield；The Faraday shield
Lower surface of the lower surface of part less than medium cylinder.
It is preferred that, the reaction chamber is pre-cleaning cavity.
As another technical scheme, the present invention also provides a kind of semiconductor processing equipment, including the present invention provide it is upper
State reaction chamber.
The invention has the advantages that：
The top electrode assembly that the present invention is provided, RF power fed-in point is arranged at the position in addition to end points of coil by it,
And the end points ground connection of the coil, coil is formed to multiple coil branches parallel with one another from the RF power fed-in point, this can subtract
Potential distribution difference on small coil, so as to improve the distributing homogeneity of plasma, and then it is uniform to improve technique
Property.In addition, by the way that RF power fed-in point is arranged at the position in addition to end points of coil, can reduce on the whole on coil
Voltage, so as to reduce the bombardment of the cylinder of the ion pair medium in plasma, so as to reduce the particle in reaction chamber
Pollution.
The reaction chamber that the present invention is provided, its above-mentioned top electrode assembly provided by using the present invention can be improved
The distributing homogeneity of gas ions, so as to improve process uniformity.
Brief description of the drawings
Fig. 1 is a kind of existing sectional view of pre-cleaning cavity；
Fig. 2 is the position view of the RF power fed-in point of radio-frequency coil；
Fig. 3 A are a kind of structure chart of top electrode assembly provided in an embodiment of the present invention；
Fig. 3 B are another structure chart of top electrode assembly provided in an embodiment of the present invention；
Fig. 4 A are the wafer engraving depth profile that technique acquisition is performed etching using coil of the prior art；
Fig. 4 B are the wafer engraving depth profile that technique acquisition is performed etching using a kind of coil in the embodiment of the present invention
Figure；
Fig. 4 C are the wafer engraving depth point that technique acquisition is performed etching using another coil in the embodiment of the present invention
Butut；
Fig. 4 D are the wafer engraving depth point that technique acquisition is performed etching using another coil in the embodiment of the present invention
Butut；
Fig. 4 E are the wafer engraving depth point that technique acquisition is performed etching using another coil in the embodiment of the present invention
Butut；
Fig. 5 is the sectional view of reaction chamber provided in an embodiment of the present invention；
Fig. 6 is the structure chart for the Faraday shield that the embodiment of the present invention is used.
Embodiment
To make those skilled in the art more fully understand technical scheme, come below in conjunction with the accompanying drawings to the present invention
The top electrode assembly and reaction chamber of offer are described in detail.
Fig. 3 A are referred to, the top electrode assembly that the present embodiment is provided includes coil 10, power is provided with the coil 10
Load point 103, it is located at the position in addition to end points (end 102 of first end 101 and second) of coil 10.Also, coil 10
End points ground connection, thus, above-mentioned coil 10 forms multiple coil branches parallel with one another from RF power fed-in point 103.Radio-frequency power supply
12 are electrically connected by adaptation 11 with above-mentioned RF power fed-in point 103, for being penetrated by the RF power fed-in point 103 to the loading of coil 10
Frequency power.
As shown in Figure 3 B, in the present embodiment, the RF energy that upper electric level assembly is also included on medium cylinder 22, coil 10 leads to
Cross in the medium 22 feed-in reaction chambers of cylinder.Medium cylinder 22 is in ring body, and coil 10 is multiturn cylindrical helical volume body coils, and
It is looped around around medium cylinder 22.In the present embodiment, RF power fed-in point 103 is one, and removes first end positioned at coil 10
101 and the second a certain specified location outside end 102, so that the coil 10 is from the RF power fed-in point 103 two coils of formation
Branch, branch is：Coil branch 105 of first coil branch 104 and second.Wherein, first coil branch 104 is located at RF power fed-in
The top of point 103；Second coil branch 105 is located at the lower section of RF power fed-in point 103.
By the way that coil 10 to be divided into Liang Ge coils branch parallel with one another, it can reduce on every circle in each coil branch
Potential distribution difference and different circle between potential difference, so as to improve the electromagnetic field produced by coil 10 in reaction
Distributing homogeneity in chamber, and then the distributing homogeneity of plasma can be improved, improve process uniformity.In addition, passing through
RF power fed-in point 103 is arranged at the position in addition to end points of coil 10, the electricity on coil 10 can be reduced on the whole
Pressure, so as to reduce the bombardment of the ion pair medium cylinder 22 in plasma, so that the particle reduced in reaction chamber is dirty
Dye.
In actual applications, can be by changing 103 position on coil 10 of RF power fed-in point, to adjust by coil 10
Distribution situation of the electromagnetic field of generation in reaction chamber.It can be come by setting the length of the second different coil branches 105
Change 103 position on coil 10 of RF power fed-in point, it is preferred that the total number of turns of coil 10 is 5.5, and the second coil branch
The span of the ratio of 105 length (unit is circle) and the total length (unit is circle) of coil 10 is in 0.9/5.5~1.1/
5.5 between.Using the above-mentioned ratio in the range of this, preferable magnetic distribution uniformity can be obtained.
It is that technique is performed etching using the coil in coil of the prior art and the embodiment of the present invention below, and uses
The coil of the position of different capacity load point in the embodiment of the present invention performs etching the contrast test of technique.In the contrast test
In, the total number of turns of coil 10 is 5.5.
Using coil of the prior art perform etching technique acquisition wafer engraving depth profile as shown in Figure 4 A, in crystalline substance
On piece surface, etching depth contour formula decentered distribution in gradient, so that etching homogeneity is relatively low, and generally 3% or so, do not have
Reach technological requirement (2%).In addition, formula decentered distribution may cause what wafer surface was damaged to etching depth contour in gradient
Problem.
Using the coil 10 in the embodiment of the present invention, and make the length of the second coil branch 105 and the total length of coil 10
Ratio be 1.15/5.5, the wafer engraving for performing etching technique acquisition using the coil 10 of the position of RF power fed-in point 103 is deep
As shown in Figure 4 B, etching depth contour still formula decentered distribution in gradient, etching homogeneity is relatively low, and may for degree distribution
Cause the problem of wafer surface is damaged.
Using the coil 10 in the embodiment of the present invention, and make the length of the second coil branch 105 and the total length of coil 10
Ratio be 1.1/5.5 or 1.05/5.5, technique is performed etching using the coil 10 of both positions of RF power fed-in point 103 and obtained
As depicted in figs. 4 c and 4d, etching depth contour tends to concentric distribution to the wafer engraving depth profile obtained, and etching homogeneity has
Improve and (can reach 2%), so as to meet technological requirement, and wafer surface can be avoided to damage.
Using the coil 10 in the embodiment of the present invention, and make the length of the second coil branch 105 and the total length of coil 10
Ratio be 1/5.5, using the coil 10 of this position of RF power fed-in point 103 perform etching technique acquisition wafer engraving depth
As shown in Figure 4 E, the concentric distribution situation of etching depth contour is best for distribution.
In addition, in the present embodiment, as shown in Figure 3 B, the first end 101 of coil 10 is grounded by impedance configuration device 13,
And the second end 102 is directly grounded.By setting the impedance magnitude of impedance configuration device 13, to make first coil branch 104 and
The sense of current of two coil branch 105 is identical or opposite.Specifically, the lower end ground connection of first coil branch 104, upper end is work(
Rate load point 103, thus lower end flowing of the electric current in first coil branch 104 from RF power fed-in point 103 to ground connection.If making resistance
The impedance of anti-configuration device 13 is sufficiently large, then connection impedance of the electric current in the second coil branch 105 from the second coil branch 105
The upper end (i.e. first end 101) of configuration device 13 is flowed towards RF power fed-in point 103, thus, first coil branch 104 and second
The sense of current of coil branch 105 is identical.If conversely, make the impedance of impedance configuration device 13 sufficiently small, the second coil branch
The upper end flowing of connection impedance configuration device 13 of the electric current from RF power fed-in point 103 towards the second coil branch 105 in 105,
Thus, the sense of current of coil branch 105 of first coil branch 104 and second is opposite.Therefore, by setting impedance configuration device
13 impedance magnitude, is allowed to sufficiently large or sufficiently small, can change the sense of current in the second coil branch 105.
If coil branch 105 of first coil branch 104 and second the sense of current on the contrary, if respectively by first coil branch
104 and second two electromagnetic fields producing of coil branch 105 cancel out each other, this can be poor to the magnetic field intensity that exists between
It is different to compensate, so as to further increase the distributing homogeneity in the superposition magnetic field formed by above-mentioned two electromagnetic field.But, on
The magnetic field intensity in superposition magnetic field can be reduced by stating two cancelling out each other for electromagnetic field, so that plasma density is reduced, therefore, should
Mode is applied to the not high technique of plasma density requirements.And for the higher technique of plasma density requirements, then
First coil branch 104 can be made identical with the sense of current of the second coil branch 105, to improve plasma density.
Above-mentioned impedance configuration device 13 can include tunable capacitor.Before technique is carried out, it can set according to specific needs
The size of tunable capacitor is put, to obtain required impedance value, so as to improve the flexibility of impedance regulation.Above-mentioned tunable capacitor
Adjustable extent is in 0~1000pF.
In addition, above-mentioned impedance configuration device 13 is on the basis of the decision sense of current is played, can also be suitable by selection
Impedance magnitude, to make adaptation 11 be easier to realize impedance matching.For example, when the total number of turns of coil 10 is 5.5, the second coil
When the ratio of the length of branch 105 and the total length of coil 10 is 1.1/5.5,1.05/5.5 or 1/5.5.Above-mentioned tunable capacitor
Capacitance can be set in the range of 200~500pF, preferably 350pF.
In actual applications, above-mentioned impedance configuration device 13 can be integrated in adaptation 11, to reduce the occupancy of equipment
Space.
It should be noted that in the present embodiment, the first end 101 of coil 10 is grounded by impedance configuration device 13, and
Second end 102 is directly grounded, but the invention is not limited in this, in actual applications, can also make the first end of coil 10
101 are directly grounded, and the second end 102 is grounded by impedance configuration device 13；Or, the first end 101 of coil 10 can also be made
It is grounded respectively by two impedance configuration devices 13 with the second end 102；Or, the first end 101 and of coil 10 can also be made
Two ends 102 are directly grounded.
It should also be noted that, in the present embodiment, coil 10 is multiturn cylindrical helical volume body coils, still, the present invention
It is not limited thereto, in actual applications, coil 10 can also be single-turn circular coil, and the single-turn circular coil can be ribbon coil
Or cylindrical coil.
Explanation is needed further exist for, in the present embodiment, RF power fed-in point 103 is one, but not office of the invention
It is limited to this, in actual applications, RF power fed-in point 103 is also located at removing for coil 10 for multiple and different RF power fed-in points 103
Position outside end points is different.In this case, coil 10 103 minutes can be the line of more than three by multiple RF power fed-in points
Branch is enclosed, this can adjust magnetic distribution uniformity with more refining, so as to further improve the distribution of plasma
Uniformity.In addition, for multiple RF power fed-in points 103, each RF power fed-in point 103 needs to be equipped with a set of adaptation 11 and radio frequency
Power supply 12.
As another technical scheme, as shown in figure 5, the present invention also provides a kind of reaction chamber 21, it includes the present invention
The top electrode assembly that above-described embodiment is provided.The line that the top electrode assembly includes medium cylinder 22 and is looped around around medium cylinder 22
Circle 10, wherein, medium cylinder 22 is arranged in the side wall 211 of reaction chamber 21；Radio-frequency power supply 12 passes through adaptation 11 and coil 10
On above-mentioned RF power fed-in point 103 electrically connect, for by the RF power fed-in point 103 to coil 10 load radio-frequency power.Radio frequency
Energy passes through in medium 22 feed-in reaction chambers 21 of cylinder.Also, pedestal 24 is additionally provided with reaction chamber 21, the pedestal 24 leads to
Cross pedestal adaptation 25 to electrically connect with pedestal radio-frequency power supply 26, pedestal radio-frequency power supply 26 is used to load back bias voltage to pedestal 24, with
Attract plasma etching wafer surface.
In the present embodiment, reaction chamber 21 also includes Faraday shield 23, and the Faraday shield 23 is around setting
In the inner side of medium cylinder 22, for protecting medium cylinder 22 not by plasma etching, while avoiding wafer surface from sputtering out
Residue be attached to medium cylinder 22 inwall on, so as to improve medium cylinder 22 energy coupling efficiency, reduce reaction chamber
Particle contamination in room 1.Also, Faraday shield 23 includes conductive ferrule, is formed with and cracks on the conductive ferrule, to keep away
Exempt from Faraday shield 23 and produce eddy-current loss and heating.
By the electromagnetic shielding effect of above-mentioned Faraday shield 23, it can further reduce current potential present in coil 10
Difference, and quadratic distribution influence can be produced on the distribution of electromagnetic field, so as to further improve the distribution of plasma
Uniformity, improves process uniformity.In addition, being acted on by the physical barriers of Faraday shield 23, metal can be effectively prevented
On the inwall for being deposited on medium cylinder 22, so as to avoid the reduction of magnetic coupling efficiency.
In the present embodiment, as shown in fig. 6, it is above-mentioned crack including the first son crack 232 and second son crack 231, wherein,
First son cracks 232 to be set along the circumferencial direction of above-mentioned conductive ferrule, and is formed angle between the axis of the conductive ferrule, is used
With by increasing the coupling efficiency of electric field component of the electromagnetic field on the circumferencial direction of conductive ferrule, to increase the total of the electromagnetic field
Coupling efficiency.The angle is 90 °.Above-mentioned first son cracks 232 to be multiple, and uniformly divides along the circumferencial direction of above-mentioned conductive ferrule
Cloth.Second son cracks 231 along the axially arranged of conductive ferrule, and second son cracks 231 to be multiple, and along above-mentioned conductive ferrule
Circumferencial direction be uniformly distributed.
The electromagnetic field produced by coil 10 can be divided into magnetic-field component in the axial direction of conductive ferrule and conductive ferrule
Electric field component on circumferencial direction.Magnetic-field component in the axial direction of conductive ferrule can be cracked 231 feed-ins by above-mentioned second son
In reaction chamber 21, meanwhile, electric field component on the circumferencial direction of conductive ferrule is reacted by 232 feed-ins of cracking of above-mentioned first son
In chamber 21, so as to add total coupling efficiency of electromagnetic field.
It should be noted that in actual applications, above-mentioned first son can also be only set to crack 232, and first son is opened
Seam 232 is tilted relative to the axis of conductive ferrule, it is preferred that the first son, which cracks, forms folder between 232 and the axis of conductive ferrule
Angle is preferably 45 °.So, son of the magnetic-field component in the axial direction of conductive ferrule on the incline direction that first son cracks 232
Component can be cracked in 232 feed-in reaction chambers 21 by the first son, while the electric field component on the circumferencial direction of conductive ferrule
Subcomponent on the incline direction that first son cracks 232 can be cracked in 232 feed-in reaction chambers 21 by the first son.
In actual applications, above-mentioned Faraday shield 23 can be grounded, or can also electric potential floating.
It is preferred that, upper surface of the upper surface higher than medium cylinder 22 of Faraday shield 23；Under Faraday shield 23
End face is less than the lower surface of medium cylinder 22, to ensure that the inner surface of medium cylinder 22 is completely covered in Faraday shield 23.In addition, can
The roughening treatment of meltallizing etc. is done with the inner surface in Faraday shield 23, to prevent from being attached to the interior table of Faraday shield 23
Particle on face comes off, and pollutes wafer surface.
In actual applications, reaction chamber can be pre-cleaning cavity.
It is preferred that, for hydrogeneous pre-cleaning processes, the upper radio-frequency power supply 28 in pre-cleaning cavity can use relatively low
Frequency (below 13.56MHz), such as 2MHz, this can be such that exciting for hydrogen atom slows down with ionization degree, so as to reduce hydrogen atom
The heat discharged is reacted with wafer surface, so as to realize low temperature pre-cleaning processes.
In summary, reaction chamber provided in an embodiment of the present invention, it is by using provided in an embodiment of the present invention above-mentioned
Top electrode assembly, can improve the distributing homogeneity of plasma, so as to improve process uniformity.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (12)
1. a kind of electric level assembly, including coil, it is characterised in that RF power fed-in point, the work(are provided with the coil
Rate load point is located at the position in addition to end points of the coil, and the end points ground connection of the coil, by the coil certainly
The RF power fed-in point forms multiple coil branches parallel with one another.
2. electric level assembly according to claim 1, it is characterised in that the upper electric level assembly also includes medium cylinder, institute
Coil encircling is stated around medium cylinder, and the coil is multiturn cylindrical helical volume body coils, and
The coil is located at the first coil branch above the RF power fed-in point from RF power fed-in point formation, and positioned at institute
State the second coil branch below RF power fed-in point.
3. top electrode assembly according to claim 2, it is characterised in that the length of the second coil branch and the line
The span of the ratio of the total length of circle is between 0.9/5.5~1.1/5.5.
4. top electrode assembly according to claim 3, it is characterised in that the length of the second coil branch and the line
The ratio of the total length of circle is 1.1/5.5,1.05/5.5 or 1/5.5.
5. top electrode assembly according to claim 1, it is characterised in that the coil is single-turn circular coil.
6. the top electrode assembly according to claim 1-5 any one, it is characterised in that the first end of the coil and/
Or the second end of the coil is grounded by impedance configuration device, the impedance of the impedance configuration device different by setting is big
It is small, to make the sense of current of two coil branches identical or opposite.
7. top electrode assembly according to claim 6, it is characterised in that the impedance-matching device includes tunable capacitor,
The capacitance scope of the tunable capacitor is 0~1000pF.
8. top electrode assembly according to claim 6, it is characterised in that the top electrode assembly also includes adaptation and work(
Rate source, the power source is electrically connected by the adaptation at the RF power fed-in point with the coil；
The impedance configuration device is integrated in the adaptation.
9. a kind of reaction chamber, it is characterised in that including the top electrode assembly described in claim 2-8 any one；
The reaction chamber also includes Faraday shield, and the Faraday shield is circumferentially positioned at the interior of the medium cylinder
Side, and the Faraday shield includes conductive ferrule, is formed with and cracks on the conductive ferrule；
Described crack is cracked including the first son, first son crack along the conductive ferrule circumferencial direction setting, and with institute
Angle is formed between the axis for stating conductive ferrule, to by increasing electricity of the electromagnetic field on the circumferencial direction of the conductive ferrule
The coupling efficiency of field component, to increase total coupling efficiency of the electromagnetic field.
10. reaction chamber according to claim 9, it is characterised in that the upper surface of the Faraday shield is higher than institute
Give an account of the upper surface of matter cylinder；Lower surface of the lower surface of the Faraday shield less than medium cylinder.
11. reaction chamber according to claim 9, it is characterised in that the reaction chamber is pre-cleaning cavity.
12. a kind of semiconductor processing equipment, it is characterised in that including the reaction chamber described in claim 9-11 any one.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710623176.6A CN107256822B (en) | 2017-07-27 | 2017-07-27 | Top electrode assembly and reaction chamber |
| TW107112447A TWI681693B (en) | 2017-07-27 | 2018-04-11 | Upper electrode element, reaction chamber and semiconductor processing device |
| PCT/CN2018/082678 WO2019019700A1 (en) | 2017-07-27 | 2018-04-11 | Upper electrode assembly, reaction chamber, and semiconductor processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710623176.6A CN107256822B (en) | 2017-07-27 | 2017-07-27 | Top electrode assembly and reaction chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107256822A true CN107256822A (en) | 2017-10-17 |
| CN107256822B CN107256822B (en) | 2019-08-23 |
Family
ID=60025713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710623176.6A Active CN107256822B (en) | 2017-07-27 | 2017-07-27 | Top electrode assembly and reaction chamber |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN107256822B (en) |
| TW (1) | TWI681693B (en) |
| WO (1) | WO2019019700A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019019700A1 (en) * | 2017-07-27 | 2019-01-31 | 北京北方华创微电子装备有限公司 | Upper electrode assembly, reaction chamber, and semiconductor processing device |
| CN109712859A (en) * | 2017-10-25 | 2019-05-03 | 北京北方华创微电子装备有限公司 | A kind of chamber |
| CN110536533A (en) * | 2018-06-07 | 2019-12-03 | 北京北方华创微电子装备有限公司 | Upper electrode system, plasma chamber and method of generating plasma |
| CN110660635A (en) * | 2018-06-29 | 2020-01-07 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN111799197A (en) * | 2020-07-27 | 2020-10-20 | 上海邦芯半导体设备有限公司 | Inductive coupling reactor and working method thereof |
| CN114446761A (en) * | 2022-01-26 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5540824A (en) * | 1994-07-18 | 1996-07-30 | Applied Materials | Plasma reactor with multi-section RF coil and isolated conducting lid |
| US6020686A (en) * | 1995-05-08 | 2000-02-01 | Applied Materials, Inc. | Inductively and multi-capacitively coupled plasma reactor |
| US20040182319A1 (en) * | 2003-03-18 | 2004-09-23 | Harqkyun Kim | Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes |
| CN101043784A (en) * | 2006-03-21 | 2007-09-26 | 显示器生产服务株式会社 | Hybrid plasma reactor |
| CN101582322A (en) * | 2008-05-12 | 2009-11-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| CN103014745A (en) * | 2011-09-28 | 2013-04-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma pre-cleaning device |
| CN207338296U (en) * | 2017-07-27 | 2018-05-08 | 北京北方华创微电子装备有限公司 | Top electrode assembly, reaction chamber and semiconductor processing equipment |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW327236B (en) * | 1996-03-12 | 1998-02-21 | Varian Associates | Inductively coupled plasma reactor with faraday-sputter shield |
| US6353206B1 (en) * | 1996-05-30 | 2002-03-05 | Applied Materials, Inc. | Plasma system with a balanced source |
| JP2002237486A (en) * | 2001-02-08 | 2002-08-23 | Tokyo Electron Ltd | Apparatus and method of plasma treatment |
| US9137884B2 (en) * | 2006-11-29 | 2015-09-15 | Lam Research Corporation | Apparatus and method for plasma processing |
| JP5800532B2 (en) * | 2011-03-03 | 2015-10-28 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| US9293353B2 (en) * | 2011-04-28 | 2016-03-22 | Lam Research Corporation | Faraday shield having plasma density decoupling structure between TCP coil zones |
| WO2016125606A1 (en) * | 2015-02-02 | 2016-08-11 | 株式会社日立国際電気 | Method for manufacturing semiconductor device, recording medium, and substrate processing device |
| CN107256822B (en) * | 2017-07-27 | 2019-08-23 | 北京北方华创微电子装备有限公司 | Top electrode assembly and reaction chamber |
-
2017
- 2017-07-27 CN CN201710623176.6A patent/CN107256822B/en active Active
-
2018
- 2018-04-11 WO PCT/CN2018/082678 patent/WO2019019700A1/en active Application Filing
- 2018-04-11 TW TW107112447A patent/TWI681693B/en active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5540824A (en) * | 1994-07-18 | 1996-07-30 | Applied Materials | Plasma reactor with multi-section RF coil and isolated conducting lid |
| US6020686A (en) * | 1995-05-08 | 2000-02-01 | Applied Materials, Inc. | Inductively and multi-capacitively coupled plasma reactor |
| US20040182319A1 (en) * | 2003-03-18 | 2004-09-23 | Harqkyun Kim | Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes |
| CN101043784A (en) * | 2006-03-21 | 2007-09-26 | 显示器生产服务株式会社 | Hybrid plasma reactor |
| CN101582322A (en) * | 2008-05-12 | 2009-11-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma processing device adopting same |
| CN103014745A (en) * | 2011-09-28 | 2013-04-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma pre-cleaning device |
| CN207338296U (en) * | 2017-07-27 | 2018-05-08 | 北京北方华创微电子装备有限公司 | Top electrode assembly, reaction chamber and semiconductor processing equipment |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019019700A1 (en) * | 2017-07-27 | 2019-01-31 | 北京北方华创微电子装备有限公司 | Upper electrode assembly, reaction chamber, and semiconductor processing device |
| CN109712859A (en) * | 2017-10-25 | 2019-05-03 | 北京北方华创微电子装备有限公司 | A kind of chamber |
| CN109712859B (en) * | 2017-10-25 | 2021-06-08 | 北京北方华创微电子装备有限公司 | Chamber |
| CN110536533A (en) * | 2018-06-07 | 2019-12-03 | 北京北方华创微电子装备有限公司 | Upper electrode system, plasma chamber and method of generating plasma |
| CN110660635A (en) * | 2018-06-29 | 2020-01-07 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN110660635B (en) * | 2018-06-29 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN111799197A (en) * | 2020-07-27 | 2020-10-20 | 上海邦芯半导体设备有限公司 | Inductive coupling reactor and working method thereof |
| CN114446761A (en) * | 2022-01-26 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019019700A1 (en) | 2019-01-31 |
| TW201911977A (en) | 2019-03-16 |
| TWI681693B (en) | 2020-01-01 |
| CN107256822B (en) | 2019-08-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107256822B (en) | Top electrode assembly and reaction chamber | |
| CN104342632B (en) | Pre-cleaning cavity and plasma processing device | |
| TWI519214B (en) | Plasma processing device | |
| KR102033873B1 (en) | Plasma processing apparatus | |
| US10090134B2 (en) | Plasma reactor with inductive excitation of plasma and efficient removal of heat from the excitation coil | |
| CN106469636B (en) | The static farad shielding of energization is for repairing the dielectric window in ICP | |
| JP5231308B2 (en) | Plasma processing equipment | |
| US7086347B2 (en) | Apparatus and methods for minimizing arcing in a plasma processing chamber | |
| US6388382B1 (en) | Plasma processing apparatus and method | |
| US20020189763A1 (en) | Plasma processing apparatus having parallel resonance antenna for very high frequency | |
| KR20120112184A (en) | Plasma processing apparatus and plasma processing method | |
| JP2000323298A (en) | Plasma treatment device and method | |
| KR102031381B1 (en) | Tcct match circuit for plasma etch chambers | |
| KR102168961B1 (en) | Plasma treatment device | |
| KR20180074633A (en) | Plasma processing apparatus and plasma generating unit | |
| CA2432068C (en) | Plasma generator | |
| KR101626039B1 (en) | Consecutive substrate processing system using large-area plasma | |
| JP7139181B2 (en) | Plasma processing equipment | |
| CN207338296U (en) | Top electrode assembly, reaction chamber and semiconductor processing equipment | |
| KR101214361B1 (en) | Plasma generation apparatus | |
| KR20100129368A (en) | Plasma reactor using multi-frequency | |
| CN207183209U (en) | Faraday shield and reaction chamber | |
| TWI760379B (en) | Plasma processing apparatus and control method of plasma processing apparatus | |
| KR101040541B1 (en) | Hybrid antenna for plasma | |
| JP6636691B2 (en) | Plasma processing apparatus and plasma processing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |