CN102776491B - Film deposition system and film - Google Patents

Film deposition system and film Download PDF

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Publication number
CN102776491B
CN102776491B CN201210147817.2A CN201210147817A CN102776491B CN 102776491 B CN102776491 B CN 102776491B CN 201210147817 A CN201210147817 A CN 201210147817A CN 102776491 B CN102776491 B CN 102776491B
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mentioned
gas
universal stage
plasma
film deposition
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CN102776491A (en
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加藤寿
菱谷克幸
菊地宏之
牛窪繁博
尾崎成则
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Abstract

The invention provides film deposition system and film.This film deposition system comprises: vacuum vessel, repeatedly supplies the first process gas and the second process gas in order to its inside; Universal stage, it has the surface comprising substrate-placing region, and substrate-placing region is rotated in vacuum vessel; First process gas supply part, to first area supply first process gas; Second process gas supply part, the second area separated across separated region and first area in the circumference at above-mentioned universal stage supplies second and processes gas; Plasma generating gases supply unit, supplies plasma generation gas in above-mentioned vacuum vessel; Antenna, it is relative with an above-mentioned surface of above-mentioned universal stage, utilizes jigger coupling to make above-mentioned plasma generation gas produce plasma body in plasma space; Faraday shield, its ground connection, is located between above-mentioned antenna and above-mentioned plasma space, have with multiple slits of arranging on the direction of above-mentioned antenna orthogonal.

Description

Film deposition system and film
Technical field
The present invention relates to a kind of supply interreaction in order process gas and on surface resultant of reaction being layered in substrate while this resultant of reaction carried out to film deposition system and the film of plasma modification.
Background technology
Such as silicon oxide film (SiO is carried out as to the substrates such as semiconductor crystal wafer (hereinafter referred to as " wafer ") 2) etc. one of the method for film forming of film, the ALD(Atomic Layer the Deposition in order multiple process gas (reactant gases) of interreaction being supplied to crystal column surface and stacked resultant of reaction can be listed) method.As the film deposition system utilizing this ALD method to carry out film forming process, such as, as described in Patent Document 1, be known to following device: multiple wafers are circumferentially arranged being located on the universal stage in vacuum vessel, and such as make universal stage relatively rotate relative to the multiple gas supply parts configured in the mode relative with universal stage, thus supply process gases everywhere to above-mentioned wafer in order.
But, in ALD method, with common CVD(Chemical VaporDeposition) compared with, the Heating temperature (film-forming temperature) due to wafer is the lower temperature of such as about 300 DEG C, therefore, such as sometimes process organism etc. contained in gas to be mixed in film as impurity.Therefore, such as, described in patent document 2, using plasma body to carry out modification while expecting the film forming by carrying out film, such impurity can be removed or reduce impurity from film.
But, if for arranging device for carrying out Cement Composite Treated by Plasma separately to carry out modification outside above-mentioned film deposition system, then sometimes and above-mentioned film deposition system and for carry out Cement Composite Treated by Plasma device between carry the time of wafer correspondingly generation time lose and cause productivity to reduce.On the other hand, plasma source combination for generation of plasma body is being arranged in film deposition system and is carrying out film forming process while when carrying out modification or carry out modification after film forming process terminates, likely cause electric injury because of plasma body to the wire structures formed in the inside of wafer.Therefore, if the damage suppressing plasma body to cause wafer and make plasma source and wafer separate, then under the pressure condition carrying out film forming process, easily there is inactivation in the ion in plasma body, free radical isoreactivity kind, therefore, likely spike is difficult to arrive wafer and can not carry out good modification.
In patent documentation 3 ~ 5, describe the device utilizing ALD method to carry out the film forming of film, but do not record the problems referred to above.
Patent documentation 1: Japanese Unexamined Patent Publication 2010-239102
Patent documentation 2: Japanese Unexamined Patent Publication 2011-40574
Patent documentation 3: U.S. Patent bulletin 7,153, No. 542
Patent documentation 4: Japanese Patent No. 3144664 publications
Patent documentation 5: U.S. Patent bulletin 6,869, No. 641
Summary of the invention
In view of the situation, a technical scheme of the present invention provides a kind of film deposition system and film, when plasma modification being carried out to this resultant of reaction while on resultant of reaction is layered in substrate by this film deposition system and film surface supplying the process gas of interreaction in order, the damage that plasma body causes substrate can be suppressed.
A technical scheme of the present invention provides a kind of film deposition system, and wherein, this film deposition system comprises: vacuum vessel, repeatedly supplies the first process gas and the second process gas in order to its inside; Universal stage, it has the surface comprising substrate-placing region, and aforesaid substrate mounting region is rotated in above-mentioned vacuum vessel; First process gas supply part, it is for processing gas to first area supply above-mentioned first; Second process gas supply part, it supplies above-mentioned second for the second area separated across separated region and above-mentioned first area in the circumference at above-mentioned universal stage and processes gas; Plasma generating gases supply unit, it for supplying plasma generation gas in above-mentioned vacuum vessel; Antenna, it is relative with an above-mentioned surface of above-mentioned universal stage, produces plasma body for utilizing jigger coupling to make above-mentioned plasma generation gas in plasma space; Faraday shield, its ground connection, is located between above-mentioned antenna and above-mentioned plasma space, and have with multiple slits of arranging on the direction of above-mentioned antenna orthogonal.
Accompanying drawing explanation
Fig. 1 is the longitudinal section of the example representing film deposition system of the present invention.
Fig. 2 is the sectional elevation of above-mentioned film deposition system.
Fig. 3 is the cross-sectional plan view of above-mentioned film deposition system.
Fig. 4 is the exploded perspective view of a part for the inside representing above-mentioned film deposition system.
Fig. 5 is the longitudinal section of a part for the inside representing above-mentioned film deposition system.
Fig. 6 is the stereographic map of a part for the inside representing above-mentioned film deposition system.
Fig. 7 is the longitudinal section of a part for the inside representing above-mentioned film deposition system.
Fig. 8 is the vertical view of a part for the inside representing above-mentioned film deposition system.
Fig. 9 is the stereographic map of a part for the Faraday shield representing above-mentioned film deposition system.
Figure 10 is the exploded perspective view of the side ring representing above-mentioned film deposition system.
Figure 11 is the longitudinal section of the part in the maze-type structure portion representing above-mentioned film deposition system.
Figure 12 is the schematic diagram of the flowing of the gas represented in above-mentioned film deposition system.
Figure 13 is the schematic diagram of the production of the plasma body represented in above-mentioned film deposition system.
Figure 14 is the stereographic map of a part for another example representing above-mentioned film deposition system.
Figure 15 is the vertical view of a part for the film deposition system represented in another example above-mentioned.
Figure 16 is the vertical view of the another example representing above-mentioned film deposition system.
Figure 17 is the vertical view of the example again representing above-mentioned film deposition system.
Figure 18 is the longitudinal section of the part for an example again representing above-mentioned film deposition system.
Figure 19 is the longitudinal section of the part for an example again representing above-mentioned film deposition system.
Figure 20 is the longitudinal section of the part for an example again representing above-mentioned film deposition system.
Figure 21 is the stereographic map of the part for an example again representing above-mentioned film deposition system.
Figure 22 is the vertical view of the part for an example again representing above-mentioned film deposition system.
Figure 23 is the vertical view representing above-mentioned Faraday shield.
Figure 24 is the vertical view of another example representing above-mentioned Faraday shield.
Figure 25 is the vertical view of the another example representing above-mentioned Faraday shield.
Figure 26 is the vertical view of the example again representing above-mentioned Faraday shield.
Figure 27 is the performance chart representing the result obtained in an embodiment of the present invention.
Figure 28 is the performance chart representing the result obtained in an embodiment of the present invention.
Figure 29 is the performance chart representing the result obtained in an embodiment of the present invention.
Figure 30 is the performance chart representing the result obtained in an embodiment of the present invention.
Figure 31 is the performance chart representing the result obtained in an embodiment of the present invention.
Figure 32 is the performance chart representing the result obtained in an embodiment of the present invention.
Figure 33 is the performance chart representing the result obtained in an embodiment of the present invention.
Figure 34 is the performance chart representing the result obtained in an embodiment of the present invention.
Figure 35 is the performance chart representing the result obtained in an embodiment of the present invention.
Figure 36 is the performance chart representing the result obtained in an embodiment of the present invention.
Figure 37 is the performance chart representing the result obtained in an embodiment of the present invention.
Figure 38 is the performance chart representing the result obtained in an embodiment of the present invention.
Figure 39 is the performance chart representing the result obtained in an embodiment of the present invention.
Figure 40 is the performance chart representing the result obtained in an embodiment of the present invention.
Embodiment
An example of the film deposition system of embodiments of the present invention is described with reference to Fig. 1 ~ Figure 11.As depicted in figs. 1 and 2, this film deposition system have plan view shape be circular vacuum vessel 1 with to be arranged in this vacuum vessel 1 and there is in the center of this vacuum vessel 1 universal stage 2 of rotation center.Further, in this film deposition system, as described later in detail, so that the surface utilizing ALD method resultant of reaction to be layered in wafer W to form film and formed the mode that this film carries out plasma modification.Now, with when carrying out plasma modification not because of plasma body to wafer W apply electric injury mode or in the mode reducing above-mentioned damage as far as possible to form above-mentioned film deposition system.Then, each several part of film deposition system is described in detail.
Vacuum vessel 1 has top board 11 and container body 12, and top board 11 can load and unload relative to container body 12.In order to suppress the central part region C of mutually different process gas each other in vacuum vessel 1 to mix, be connected with for by N at the central part of the upper surface side of top board 11 2(nitrogen) gas carries out the divided gas flow supply-pipe 51 supplied as divided gas flow.Reference numeral 13 in Fig. 1 is containment member, the such as O type ring of the circumference of the upper surface being arranged on container body 12 in the form of a ring.
Universal stage 2 is fixed on roughly cylindric core 21 at central part, and universal stage 2 utilize to be connected with the lower surface of this core 21 and the turning axle 22 extended in vertical and around vertical axis, be rotate freely clockwise in this example embodiment.Reference numeral 23 in Fig. 1 is driving parts that turning axle 22 is rotated around vertical axis, and Reference numeral 20 is the housings for holding turning axle 22 and driving part 23.The flange portion of the upper surface side of this housing 20 is installed on the lower surface of the bottom surface sections 14 of vacuum vessel 1 airtightly.In addition, this housing 20 is connected with the N for supplying to the lower zone of universal stage 2 as sweeping gas 2the sweeping gas supply-pipe 72 of gas.The outer circumferential side around core 21 in the bottom surface sections 14 of vacuum vessel 1 is formed as ring-type in the mode close to universal stage 2 of side from below and is configured to protuberance 12a.
As shown in Figures 2 and 3, at the surface element of universal stage 2, be provided with the recess 24 as the circle in substrate-placing region along sense of rotation (circumference), this recess 24 for load multiple, such as 5 the wafer W as substrate.The diameter dimension of recess 24 and depth dimensions are set, so as diameter dimension such as the wafer W of 300mm size put into (accommodation) to this recess 24 time, the surface of wafer W flushes with the surface (not loading the region of wafer W) of universal stage 2.Be formed with the through hole (not shown) run through for such as three lifter pins described later in the bottom surface of recess 24, this lifter pin is used for side jack-up wafer W from below and is elevated to make wafer W.
As shown in Figures 2 and 3, respectively with the recess 24 in universal stage 2 by relative position, region, be radially configured with in the upper separated from each other compartment of terrain of the circumference (sense of rotation of universal stage 2) of vacuum vessel 1 five nozzles 31,32,34,41,42 be such as made up of quartz respectively.Above-mentioned each nozzle 31,32,34,41,42 such as to be installed with the mode of wafer W relatively horizontal-extending towards central part region C with the periphery wall from vacuum vessel 1 respectively.In this example embodiment, it seems that plasma generation gas jet 34, divided gas flow nozzle 41, first process gas jet 31, divided gas flow nozzle 42 and the second process gas jet 32 process such order (sense of rotation of the universal stage 2) arrangement along clockwise direction of gas jet 31, divided gas flow nozzle 42 and the second process gas jet 32 according to plasma generation gas jet 34, divided gas flow nozzle 41, first from delivery port 15 described later.As shown in Figure 1, in order to make the gaseous plasma sprayed from this plasma generation gas jet 34, plasma generation portion 80 is provided with at the upper side of plasma generation gas jet 34.Describe this plasma body generating unit 80 below in detail.
Process gas jet 31 forms the first gas supply part, and process gas jet 32 forms the second process gas supply part, and divided gas flow nozzle 41,42 forms divided gas flow supply unit respectively.In addition, Fig. 2 represents and can see plasma generation gas jet 34 and state after being dismantled in plasma generation portion 80 and framework described later 90, and Fig. 3 represents and installed above-mentioned plasma generation portion 80 and framework state after 90s.In addition, in FIG, plasma generation portion 80 is schematically shown with single dotted broken line.
Each nozzle 31,32,34,41,42 is connected with following each supplies for gas (not shown) respectively via flow rate regulating valve.That is, the first process gas jet 31 with containing Si(silicon) first process gas, such as BTBAS(dual-tert-butyl aminosilane, SiH 2(NH-C(CH 3) 3) 2) supply source of gas etc. connects.Second process gas jet 32 and second processes gas, such as O 3the same O of (ozone) gas 2the supply source of the mixed gas of (oxygen) gas connects.Plasma generation gas jet 34 such as with Ar(argon) the same O of gas 2mixed gas (the Ar:O of gas 2the volume ratio of=100:0.5 ~ about 100:20) supply source connect.Divided gas flow nozzle 41,42 respectively with the N as divided gas flow 2the supplies for gas of (nitrogen) gas connects.In addition, below, conveniently, using the second process gas as O 3gas is described.In addition, the second process gas jet 32 is provided with for generating O 3the ozonizer of gas, explanations are omitted heres diagram.
At multiple positions of the lower face side of gas jet 31,32,41,42, along the radial direction of universal stage 2 such as to be formed with gas jetting hole 33 at equal intervals.In the side of plasma generation with gas jet 34, with towards universal stage 2 sense of rotation upstream side (second process gas jet 32 side) and downward the mode of side (tiltedly below) along the length direction of this plasma generation gas jet 34 at multiple position such as to be formed with the gas jetting hole 33 that such as opening bore is 0.3mm ~ 0.5mm at equal intervals.Illustrate below the gas jetting hole 33 of so setting plasma generation gas jet 34 towards reason.The mode that above-mentioned each nozzle 31,32,34,41,42 is such as about 1mm ~ 5mm with the distance of separation of the upper surface of the lower ora terminalis of this nozzle 31,32,34,41,42 and universal stage 2 configures.
The lower zone of process gas jet 31 as making containing Si gas adsorption in the first treatment zone P1 of wafer W, the lower zone of process gas jet 32 as make to be adsorbed in wafer W containing Si gas and O 3the second treatment zone P2 that gas reacts.Divided gas flow nozzle 41,42 is respectively used to be formed the separated region D that the first treatment zone P1 is separated with the second treatment zone P2.As shown in Figures 2 and 3, the top board 11 of the vacuum vessel 1 in this separated region D is provided with roughly fan-shaped convex shaped part 4, divided gas flow nozzle 41,42 is contained in the groove portion 43 that is formed in this convex shaped part 4.Thus, in the both sides in the circumference of universal stage 2 of divided gas flow nozzle 41,42, in order to stop process gases mixing each other everywhere, be configured with lower end face 44(first end face of the lower surface as above-mentioned convex shaped part 4), be configured with end face 45(second end face higher than this end face 44 in the above-mentioned circumferential both sides of this end face 44).In order to stop process gases mixing each other everywhere, the circumference (the outer edge side position of vacuum vessel 1) of convex shaped part 4 in and the mode of with container body 12 slightly separating relative with the outer face of universal stage 2 to bend to L font.
Below, above-mentioned plasma generation portion 80 is described in detail.This plasma body generating unit 80 is such as formed by the antenna 83 be made up of metal wires such as copper (Cu) is wound into coiled type, is located on the top board 11 of this vacuum vessel 1 in the mode demarcated airtightly by the interior region with vacuum vessel 1.In this example embodiment, antenna 83 is formed the surface enforcement nickel plating of copper and gold-plated material by according to nickel plating and gold-plated order like this.Specifically, as shown in Figure 4, above-mentioned plasma generation gas jet 34 upper side (in detail, from than this nozzle 34 slightly by the position of the sense of rotation upstream side of universal stage 2 to the position of separated region D deflecting nozzle 34 side slightly in the above-mentioned sense of rotation downstream side than this nozzle 34) top board 11, be formed with the opening portion 11a in roughly sector open when overlooking.
This opening portion 11a is formed in and plays the region than the outer rim position of about 80mm in the outer part of universal stage 2 from the position of outer circumferential side of rotation center such as about the 60mm apart from universal stage 2.In addition, opening portion 11a interferes (avoiding) in order to the maze-type structure portion 110 described later do not arranged with the central part region C at vacuum vessel 1, makes the end of the central side at universal stage 2 of opening portion 11a cave in as arc-shaped in the mode matched with the outer rim in this maze-type structure portion 110 when overlooking.Further, as shown in Figure 4 and Figure 5, be that the mode that diminishes of step type makes this opening portion 11a be formed with the stage portion 11b of such as three layers throughout the circumferential from the upper end side of top board 11 towards lower end side with the opening bore of this opening portion 11a.As shown in Figure 5, the upper surface of undermost stage portion (peristoma portion) 11b in above-mentioned stage portion 11b, is formed with groove 11c throughout the circumferential, is configured with containment member, such as O type ring 11d in this groove 11c.In addition, in the diagram, the diagram of groove 11c and O type ring 11d is eliminated.
Also as shown in Figure 6, this opening portion 11a is configured with framework 90, this framework 90 stretch out in flange shape level throughout the circumferential with the circumference of its upper side and formed flange part 90a and central part downward the vacuum vessel 1 of side interior region and the mode that caves in is formed.This framework 90 is such as the saturating magnet (the permeable material of magnetic force) be made up of dielectric materials such as quartz, and as shown in Figure 9, the gauge t of above-mentioned sunk part is such as 20mm.In addition, this framework 90 is formed as follows: when wafer W is positioned at the below of this framework 90, distance between the inner-wall surface in C side, central part region of framework 90 and the outer rim of wafer W is 70mm, and the distance between the inner-wall surface of the outer circumferential side at universal stage 2 of framework 90 and the outer rim of wafer W is 70mm.Thus, the sense of rotation upstream side at universal stage 2 of opening portion 11a and two limit angulation α in downstream side are such as 68 °.
When this framework 90 being put in above-mentioned opening portion 11a, the undermost stage portion 11b in flange part 90a and stage portion 11b is locking each other.Further, above-mentioned O type ring 11d is utilized to make this stage portion 11b(top board 11) be connected airtightly with framework 90.In addition, utilize with the pressing member 91 being formed as frame-shaped to the mode of mating with the outer rim of opening portion 11a by above-mentioned flange part 90a throughout the circumferential downward side press, and use not shown bolt etc. that this pressing member 91 is fixed on top board 11, thus, the internal atmosphere of vacuum vessel 1 is set airtightly.The size h that separates between the lower surface of this framework 90 when framework 90 being fixed on airtightly on top board 11 like this and the surface of the wafer W on universal stage 2 is 4mm ~ 60mm, is 30mm in this example embodiment.In addition, Fig. 6 represents that the figure of framework 90 is seen in side from below.
In order to stop N 2gas, O 3gas etc. enter into the lower zone of this framework 90, and as shown in Fig. 1 and Fig. 5 ~ Fig. 7, the outer edge of the lower surface of framework 90 throughout the circumferential to the lower side (universal stage 2 side) is stretched out vertical and forms the jut 92 of gas restriction.Further, in the region that the upper surface by the inner peripheral surface of this jut 92, the lower surface of framework 90 and universal stage 2 surrounds, above-mentioned plasma generation gas jet 34 is accommodated at the sense of rotation upstream side of universal stage 2.
That is, in the lower zone (plasma space 10) of framework 90, because the gas supplied from plasma generation gas jet 34 occurs plasmarized, therefore, N is worked as 2when gas enters into this lower zone, N 2the plasma body of gas and O 3gas (O 2gas) plasma body interreaction and generate NO xgas.If produce this NO xgas, then can corrode the component in vacuum vessel 1.Therefore, in order to make N 2gas is difficult to the lower zone entering into framework 90, is formed with above-mentioned jut 92 in the lower face side of this framework 90.
In the mode matched with the profile of plasma generation gas jet 34, the jut 92 of the base end side (the sidewall portion of vacuum vessel 1) of this plasma generation gas jet 34 is cut into roughly arc-shaped.The size d that separates between the lower surface of jut 92 and the upper surface of universal stage 2 is 0.5mm ~ 4mm, is 2mm in this example embodiment.The width dimensions of this jut 92 and height dimension are such as 10mm and 28mm respectively.In addition, Fig. 7 represents the longitudinal section of vacuum vessel 1 along the sense of rotation cutting of universal stage 2.
In addition, in film forming treating processes, because universal stage 2 turns clockwise, therefore N 2gas is subject to the drive of the rotation of this universal stage 2 and the lower side for entering into framework 90 from the gap between universal stage 2 and jut 92.Therefore, in order to stop N 2gas enters into the lower side of framework 90 via above-mentioned gap, and gas is sprayed from the lower side of framework 90 to above-mentioned gap.Specifically, as shown in figure 5 and figure 7, plasma generation gas jet 34 gas jetting hole 33 with towards this gap mode, namely towards the sense of rotation upstream side of universal stage 2 and mode downward configure.As shown in Figure 7, plasma generation gas jet 34 gas jetting hole 33 towards the angulation θ with vertical axis be such as about 45 °.
Herein, when viewed from below (plasma space 10) side of framework 90 for sealing the O type ring 11d in the region between top board 11 and framework 90 time, as shown in Figure 5, between this plasma space 10 and O type ring 11d, be formed with jut 92 throughout the circumferential.Therefore, alternatively in order to not make O type ring 11d be directly exposed in plasma body, O type ring 11d and plasma space 10 are isolated.Thus, even if the plasma body in plasma space 10 is such as diffusing to O type ring 11d side, because plasma body will spread via the below of jut 92, therefore plasma knows from experience inactivation before arrival O type ring 11d.
Accommodate Faraday shield 95 that be made up of metal sheet, ground connection in the inside (region of caving in the lower side in framework 90) of framework 90, this metal sheet be formed in the mode roughly matched with the interior shape of this framework 90, gauge k is such as the tabular body of the electroconductibility of about 1mm.In this example embodiment, Faraday shield 95 is made up of copper (Cu) plate or forms by from downside to the sheet material of copper coin nickel plating (Ni) film and gold (Au) film.Namely, this Faraday shield 95 has the horizontal plane 95a flatly formed in the mode matched with the bottom surface of the framework 90 and vertical guide 95b extended upward throughout the circumferential from the peripheral end of this horizontal plane 95a, time viewed from upper side, this Faraday shield 95 is roughly fan-shaped along the inner edge of framework 90.This Faraday shield 95 such as utilizes that the rolling of metal sheet is processed to form or is formed by being bent upward in the region corresponding with the outside of horizontal plane 95a in metal sheet.
In addition, viewed from the rotation center of universal stage 2 during Faraday shield 95, the upper edge on the right side of Faraday shield 95 is flatly stretched out to the right, and the upper edge in the left side of Faraday shield 95 is flatly stretched out to the left, thus forms support 96.Further, when Faraday shield 95 is contained in the inside of framework 90, the lower surface of Faraday shield 95 and the upper surface of framework 90 contact with each other and above-mentioned support 96 is supported by the flange part 90a of framework 90.In order to make Faraday shield 95 insulate with the plasma generation portion 80 loaded above Faraday shield 95, this horizontal plane 95a is laminated with insulcrete 94 that gauge is such as about 2mm, that be such as made up of quartz.Above-mentioned horizontal plane 95a is formed with multiple slit 97, with the shape of the antenna 83 in plasma generation portion 80 describe in detail in the lump this slit 97 shape, configure layout.In addition, in Fig. 8 and Fig. 9 described later etc., the description of insulcrete 94 is eliminated.
Plasma generation portion 80 is formed in the mode of the inside that can be contained in Faraday shield 95, thus, as shown in Figure 4 and Figure 5, plasma generation portion 80 is to configure across the mode of framework 90, Faraday shield 95 and insulcrete 94 in the face of the inside (the wafer W on universal stage 2) of vacuum vessel 1.As mentioned above, this plasma body generating unit 80 by make as mentioned above antenna 83 around the vertical axis coil of wire around and form, in this example embodiment, be provided with two plasma generation portions 80,80.Each plasma generation portion 81,82 is wound with three layers of antenna 83 respectively.When in above-mentioned two plasma generation portions 80,80 is called the first plasma generation portion 81, when another being called the second plasma generation portion 82, as shown in Figure 4 and Figure 5, the first plasma generation portion 81 when overlooking in the mode matched with the inner edge of framework 90 in roughly fan-shaped.In addition, first plasma generation portion 81 with it in the end of central part C side and configure close to the mode of framework 90 respectively in the end of outer circumferential side, when being positioned at the below in this first plasma generation portion 81 with convenient wafer W, can in this wafer W, at the end of C side, central part region and area illumination (supply) plasma body between the end of the outer edge side of universal stage 2.In addition, be formed with the stream for the water coolant that circulates in the inside of antenna 83, explanations are omitted here this stream.
In order to supply plasma body at the radial direction outer circumferential side of universal stage 2 to wafer W, the second plasma generation portion 82 is configured in the position of leaving about 200mm from the central position of the wafer W universal stage 2 to outer peripheral side and leaves to outer peripheral side between the position of about 90mm from the outer rim of universal stage 2.That is, when universal stage 2 rotates, compared with central part side, the circumferential speed of peripheral part side is very fast.Therefore, compared with inner peripheral portion side, sometimes less in the amount of the plasma body of peripheral part side direction wafer W supply.Therefore, in order to make the amount of the plasma body supplied to wafer W consistent on the radial direction of universal stage 2, can say to compensate the amount of the plasma body utilizing the first plasma generation portion 81 to supply to wafer W and being provided with the second plasma generation portion 82.
The antenna 83 in the first plasma generation portion 81 is such as 13.56MHz with frequency individually via matching box 84 respectively with the antenna 83 in the second plasma generation portion 82 and the high frequency electric source 85 that output power is such as 5000W is connected, and can adjust High frequency power individually to the first plasma generation portion 81 and the second plasma generation portion 82.In addition, in Fig. 3 etc., matching box 84 and high frequency electric source 85 is simplified.In addition, the Reference numeral 86 in Fig. 1, Fig. 3 and Fig. 4 etc. is the connection electrode for each plasma generation portion 81,82 and matching box 84 and high frequency electric source 85 being electrically connected.
Herein, the slit 97 of above-mentioned Faraday shield 95 is described in detail.This slit 97 goes for stoping the electric field component wafer W downward in the Electric and magnetic fields (electromagnetic field) of generation in each plasma generation portion 81,82 and makes magnetic field reach wafer W.That is, if electric field reaches wafer W, then the electrical wiring sometimes formed in the inside of this wafer W can be subject to electric injury.On the other hand, because Faraday shield 95 is made up of the metal sheet of ground connection as mentioned above, thus, if do not form slit 97, then not only electric field is blocked, and magnetic field is also blocked.In addition, if form larger opening portion in the below of antenna 83, be then not only magnetic field and pass through, and electric field also can pass through.Therefore, in order to block electric field and make magnetic field pass through, be formed with the slit 97 setting size and configuration layout as follows.
Specifically, as shown in Figure 8, slit 97 is respectively formed at the lower position of antenna 83 in the whole circumference of Faraday shield 95 in the mode extended on the direction orthogonal with the coiling direction of the antenna 83 in the first plasma generation portion 81 and the antenna 83 in the second plasma generation portion 82.Therefore, such as, be configured with in the region of antenna 83 along the radial direction of universal stage 2, slit 97 is formed as linearity in the mode of the tangential direction along universal stage 2 or is formed as arc-shaped in mode circumferentially.In addition, be that arc-shaped is configured with in the region of antenna 83 in the mode matched with the outer rim of universal stage 2, slit 97 is being formed as linearity from the rotation center of universal stage 2 towards the direction of outer rim.Further, the part that between above-mentioned two regions, antenna 83 is bending, slit 97 with the orthogonal mode of the bearing of trend of the antenna 83 with this curved part along tilt respectively relative to the circumference of universal stage 2 and radial direction towards formation.Thus, the bearing of trend along antenna 83 is arranged with multiple slit 97.
Herein, as mentioned above, antenna 83 and frequency are that the high frequency electric source 85 of 13.56MH z is connected, and the wavelength corresponding with this frequency is 22m.Therefore, in order to the width dimensions making slit 97 have less than 1/10000 degree of this wavelength, as shown in Figure 9, slit 97 with its width dimensions d1 be 1mm ~ 5mm, be in this example embodiment 2mm, separately size d2 between slit 97,97 is 1mm ~ 5mm, is that the mode of 2mm is formed in this example embodiment.In addition, shown in Fig. 8 described above, this slit 97 is formed in the position leaving about 30mm to the right from the right-hand member than this antenna 83 and leaves to the left end than antenna 83 region of the position of about 30mm to the left, so that viewed from the bearing of trend of antenna 83 during this slit 97, this slit 97 length dimension is such as 60mm respectively.In Faraday shield 95, the region beyond the forming region of above-mentioned slit 97, be namely wound with the center side in the region of antenna 83, be formed with opening portion 98 in the position of rotation center side of universal stage 2 and the position of outer circumferential side.In addition, slit 97 is eliminated in figure 3.In addition, in figures 4 and 5, simplify slit 97, but slit 97 is such as formed with about 150.Slit 97 becomes large mode with width dimensions d1 along with going towards the region leaving this opening portion 98 from the region near opening portion 98 and is formed, but eliminates diagram herein.
Then, the explanation of each several part of vacuum vessel 1 is turned back to.As shown in Fig. 2, Fig. 5 and Figure 10, at the outer circumferential side of universal stage 2, be configured with the side ring 100 as cover body than this universal stage 2 position slightly on the lower.The effect of this side ring 100 is as follows: such as when carrying out clean to device, and when making the clean air circulation of fluorine system in alternative process gases everywhere, this side ring 100 makes the inwall of vacuum vessel 1 not contact this clean air for the protection of the inwall of vacuum vessel 1.That is, if do not arrange side ring 100, then, between the peripheral part and the inwall of vacuum vessel 1 of universal stage 2, the current path being formed with the recess shape that can form air-flow (evacuation circuit) in the horizontal throughout the circumferential with ring-type can be said.Therefore, this side ring 100 is arranged at this current path to make the inner-wall surface of vacuum vessel 1 mode be not exposed in current path as far as possible.In this example embodiment, the region of the outer edge side of each separated region D and framework 90 is exposed to the upper side of this side ring 100.
Two place's venting ports 61,62 are formed with in the mode of mutually separating in the circumferential at the upper surface of side ring 100.In other words, be formed with two venting ports in the lower side of said flow path, be formed with venting port 61,62 in the position corresponding with above-mentioned venting port of side ring 100.When in above-mentioned two venting ports 61,62 is called first row gas port 61, when another is called second exhaust port 62, first row gas port 61 be formed in the first process gas jet 31 and than this first process gas jet 31 by the sense of rotation downstream side of universal stage separated region D between, the position of being partial to this separated region D side.Second exhaust port 62 is formed in plasma generation gas jet 34 and leans between the separated region D in the sense of rotation downstream side of universal stage, to be partial to this separated region D side position than this plasma generation gas jet 34.First row gas port 61 for discharging the first process gas and divided gas flow, second exhaust port 62 except for discharging except the second process gas and divided gas flow, also for discharging plasma generation gas.As shown in Figure 1, the vapor pipe 63 being provided with butterfly valve equipressure adjustment part 65 is utilized to be connected to make above-mentioned first row gas port 61 and second exhaust port 62 with the such as vacuum pump 64 as vacuum exhaust mechanism respectively.
Herein, as mentioned above, owing to being formed with framework 90 from C side, central part region to outer edge portion side, thus, to be restricted to can saying for the air-flow flowing to second exhaust port 62 of each gas sprayed by the sense of rotation upstream side of universal stage 2 than this framework 90 because of this framework 90.Therefore, the gas flow path 101 for the channel-shaped for the second process gas and divided gas flow flowing is formed with at the upper surface being positioned at the outside of framework 90 of above-mentioned side ring 100.Specifically, as shown in Figure 3, in the region of this gas flow path 101 the end from the sense of rotation upstream side by universal stage 2 than framework 90 is to the position of the 2nd process gas jet 32 lateral deviation such as about 60mm to above-mentioned second exhaust port 62 be, such as that the mode of 30mm is formed as arc-shaped with depth dimensions.Thus, this gas flow path 101 in the mode matched with the outer rim of framework 90 and with viewed from upper side time stride across the outer edge of this framework 90 mode formed.Eliminate the diagram of this side ring 100, but in order to make this side ring 100 have erosion resistance for fluorine system gas, the surface of side ring 100 is such as coated with aluminum oxide etc. or by coverings such as quartzy tectums.
As shown in Figure 2, protuberance 5 is provided with at the central part of the lower surface of top board 11, the position in C side, central part region of this protuberance 5 and convex shaped part 4 continuously and be formed as roughly ring-type throughout the circumferential, further, the lower surface of protuberance 5 is formed as identical height with the lower surface (end face 44) of convex shaped part 4.Than the upper side of this protuberance 5 by the core 21 of the rotation center side of universal stage 2, be configured with the maze-type structure portion 110 occurring to mix mutually in the C of central part region for suppressing the first process gas and second to process gas.Namely, from above-mentioned Fig. 1, due to until be formed with framework 90 near the position of C side, central part region, therefore, be formed in the position of being partial to above-mentioned rotation center side for the position being positioned at the upper side of universal stage 2 of supporting in the core 21 of the central part of universal stage 2 to avoid framework 90.Thus, can saying, compared with outer edge portion side, holding miscible state in C side, central part region each other in such as processing gas.Therefore, by formed maze-type structure portion 110, play gas stream be used for prevent process gas mix each other.
Specifically, as in fig. 11 to this maze-type structure portion 110 carry out amplification represent, this maze-type structure portion 110 have employed following structure: be formed from universal stage 2 side towards top board 11 side vertical ground the first wall portion 111 of extending and from top board 11 side towards the second wall portion 112 of extending of universal stage 2 vertical ground throughout the circumferential respectively, further, above-mentioned wall portion 111,112 alternately configured on the radial direction of universal stage 2.Specifically, the second wall portion 112, first wall portion 111 and the second wall portion 112 configure towards C side, central part region from above-mentioned protuberance 5 side according to the order of the second wall portion 112, first wall portion 111 and the second wall portion 112.In this example embodiment, become following structure: the second wall portion 112 of protuberance 5 side, compared with other wall portion 111,112, thickens to this protuberance 5 side.If give an example to each size of such wall portion 111,112, separately size j then between wall portion 111,112 is such as 1mm, between wall portion 111 with top board 11 to separate size (gap size between the second wall portion 112 and core 21) m be such as 1mm.
Thus, in maze-type structure portion 110, such as spray from the first process gas jet 31 and need to cross wall portion 111,112 for processing gas towards first of central part region C, therefore flow velocity is slack-off along with going towards central part region C, thus is difficult to diffusion.Therefore, before process gas arrives central part region C, utilize the divided gas flow supplied to this central part region C to be squeezed by process gas and get back to treatment zone P1 side.In addition, for for the second process gas towards central part region C, be difficult to due to maze-type structure portion 110 too arrive central part region C.Therefore, it is possible to prevent above-mentioned process gas from central part region C, mixing mutually occurring each other.
On the other hand, the N supplied from upper side to this central part region C 2gas is for rapidly spreading in the circumferential, but owing to being provided with maze-type structure portion 110, therefore cross in this maze-type structure portion 110 wall portion 111,112 time, flow velocity is suppressed.Now, above-mentioned N 2gas such as also for entering into the very narrow region between universal stage 2 and jut 92, but, because flow velocity receives the suppression in maze-type structure portion 110, therefore N 2the region (such as treatment zone P1, P2 side) that the gas flow region narrower than this is broad.Therefore, inhibit N 2gas is to the inflow of the lower side of framework 90.In addition, as described later, also because the space (plasma space 10) of the lower side of framework 90 is configured to malleation compared with other regions in vacuum vessel 1, therefore, it is possible to suppress N 2gas is to the inflow in this space.
As shown in Figure 1, be provided with the heating unit 7 as heating arrangements in the space between universal stage 2 and the bottom surface sections 14 of vacuum vessel 1, this heating unit 7 is for being such as heated to 300 DEG C across universal stage 2 by the wafer W on universal stage 2.Reference numeral 71a in Fig. 1 is the cover component of the side, side being arranged on heating unit 7, and Reference numeral 7a is the covering member for covering this heating unit 7 at the upper side of this heating unit 7.In addition, in the lower side of heating unit 7, the multiple positions in the circumference of the bottom surface sections 14 of vacuum vessel 1 are provided with the purging supply-pipe 73 for purging the configuration space of heating unit 7.
As shown in Figures 2 and 3, the sidewall of vacuum vessel 1 is formed with delivery port 15, this delivery port 15 is for carrying out the handing-over of wafer W between the conveying arm in not shown outside and universal stage 2, this delivery port 15 utilizes gate valve G opening and closing airtightly freely.In addition, due in the face of the position of this delivery port 15, wafer W is joined between the recess 24 and conveying arm 10 of universal stage 2, therefore, be provided with the hoisting appliance (all not shown) of lifter pin and this lifter pin joined at the position corresponding with this delivery position of the lower side of universal stage 2, the lifter pin of this handing-over is used for running through recess 24 and lifting wafer W from the back side.
In addition, in this film deposition system, being provided with the control part 120 be made up of computer for controlling whole device action, in the storer of this control part 120, storing the program for carrying out film forming process described later and modification.This program enrolls group in steps to perform device action described later, is installed in control part 120 from the storage part 121 as storage media such as hard disk, CD, photomagneto disk, storage card, floppy disk.
Below, the effect of above-mentioned embodiment is described.First, open gate valve G, universal stage 2 is rotated off and on, while utilize not shown conveying arm to be such as placed on universal stage 2 by five wafer W via delivery port 15.This wafer W has been implemented use dry etching, CVD(Chemical Vapor Deposition) wiring carried out such as method imbeds operation, thus, is formed with electrical wiring structure in the inside of this wafer W.Then, closing gate valve G, utilizing vacuum pump 64 to make in vacuum vessel 1 is emptying state, and universal stage 2 is such as turned clockwise, while utilize heating unit 7 that wafer W is heated to such as 300 DEG C with 120rpm.
Then, spray containing Si gas from process gas jet 31, spray O from process gas jet 32 3gas, and such as spray Ar gas and O with 5s1m from plasma generation gas jet 34 2the mixed gas of gas.In addition, from divided gas flow nozzle 41,42 with the flow injection of separation gas of regulation, and also spray N with the flow of regulation from divided gas flow supply-pipe 51 and sweeping gas supply-pipe 72,72 2gas.Then, utilize pressure adjustment unit 65 will be adjusted to the pressure, the such as 400Pa ~ 500Pa that have preset in vacuum vessel 1, be adjusted to 500Pa in this example embodiment.In addition, to each plasma generation portion 81,82 supply high frequency electric power, to make each plasma generation portion 81,82 reach such as 1500W and 1000W respectively.
Now, be such as subject to the rotation of this universal stage 2 drive and from the O circulated towards this framework 90 by the position of the sense of rotation upstream side of universal stage 2 than framework 90 3gas and N 2because of this framework 90, wish produces the disorder of air-flow to gas.But, due to the side ring 100 of the outer circumferential side in framework 90 being formed with gas flow path 101, therefore, above-mentioned O 3gas and N 2gas is discharged by this gas flow path 101 in the mode avoiding framework 90.
On the other hand, a part of gas the gas circulated from the upstream side of above-mentioned framework 90 towards this framework 90 is for entering into the below of framework 90.But, in the region of the lower side of above-mentioned framework 90, be formed with jut 92 in the mode covering this region, and the gas jetting hole 33 of plasma generation gas jet 34 is towards the oblique below of the sense of rotation upstream side of universal stage 2.Thus, the plasma generation gas sprayed with gas jet 34 from plasma generation and the lower side of jut 92 are collided, and by the O for flowing into from above-mentioned upstream side 3gas, N 2gas is expressed into the outside of this framework 90.Further, jut 92 is utilized this plasma generation gas to be squeezed the sense of rotation downstream side getting back to universal stage 2.Now, by being set as above-mentioned each gas flow, and owing to being provided with jut 92, therefore make pressure height such as about the 10Pa in other regions in the pressure ratio vacuum vessel 1 in the plasma space 10 of the below of framework 90.Due to this situation, also O can be stoped 3gas, N 2gas enters the lower side of framework 90.
Further, containing Si gas and O 3gas is for entering into central part region C, but, owing to being provided with above-mentioned maze-type structure portion 110 in the C of this central part region, therefore utilize this maze-type structure portion 110 to hinder air-flow as described above, and the divided gas flow that utilization supplies from upper side to central part region C will containing Si gas and O 3gas squeezes gets back to original treatment zone P1, P2 side.Thus, the mixing of above-mentioned process gas each other in the C of central part region is prevented.In addition, maze-type structure portion 110 is utilized can to suppress the N sprayed to outer peripheral side from central part region C equally 2gas enters the lower side of framework 90.
Further, due to N 2gas is fed between the first treatment zone P1 and the second treatment zone P2, thus, as shown in figure 12, to contain Si gas and O 3the mode that gas and plasma generation gas sit on the top of the other discharges each gas.In addition, there is sweeping gas in the lower side supply of universal stage 2, therefore, got back to venting port 61,62 side for the gas that spread to the lower side of universal stage 2 by above-mentioned sweeping gas is crowded.
Now, in plasma generation portion 80, the High frequency power supplied from high frequency electric source 85 is utilized to produce Electric and magnetic fields like that as shown schematically in fig. 13.Owing to being provided with Faraday shield 95 as mentioned above, therefore, the electric field in above-mentioned Electric and magnetic fields is reflected or absorbs by this Faraday shield 95 (decay), thus hinders (blocking-up) this electric field to reach in vacuum vessel 1.On the other hand, owing to being formed with slit 97 in Faraday shield 95, therefore, magnetic field reaches in vacuum vessel 1 by this slit 97 and via the bottom surface of framework 90.In addition, due to the whole circumference in the Faraday shield 95 of the side, side in plasma generation portion 81,82 not forming slit 97, therefore, Electric and magnetic fields can not spread to lower side via this side, side.
Thus, utilize the magnetic field passed through via slit 97 to make the plasma generation gas activation of spraying from plasma generation gas jet 34, such as, generate the plasma body such as ion, free radical.Now, owing to being provided with two plasma generation portions 81,82, thus, the plasma body generated in vacuum vessel 1 is greater than the intensity of the central part side at universal stage 2 in the intensity of peripheral part side.In addition, schematically show plasma generation portion 81,82 in fig. 12, and schematically and depict significantly above-mentioned plasma generation portion 81,82, Faraday shield 95, each size between framework 90 and wafer W.
On the other hand, utilize the rotation of universal stage 2, in the 1st treatment zone P1, containing Si gas adsorption in wafer W surface, then, in the 2nd treatment zone P2, be adsorbed on wafer W containing Si gas oxidized, form the silicon oxide film (SiO as thin film composition of 1 layer or multilayer 2) molecular layer, thus forming reactions resultant.Now, in silicon oxide film, such as, due to containing containing residual base in Si gas, therefore sometimes containing impurity such as moisture (OH yl), organism.
And, when the surface contact of above-mentioned plasma body (spike) due to the rotation of universal stage 2 with wafer W, carry out the modification of silicon oxide film.Specifically, such as, by making the surface collision of plasma body and wafer W, such as, make above-mentioned impurity release from silicon oxide film, or make the element permutatation in silicon oxide film and seek the densification (densification) of silicon oxide film.
Now, make because universal stage 2 rotates the circumferential speed of peripheral part side faster than the circumferential speed of central part side, therefore, there is the tendency that the degree of the modification of this peripheral part side is less than the degree of the modification of central part side.But because the intensity of the plasma body of the central part side of the strength ratio universal stage 2 of the plasma body of the peripheral part side of universal stage 2 is strong, therefore, the degree of the modification on the radial direction of universal stage 2 is consistent.Continue to rotate by making universal stage 2 like this, containing Si gas adsorption in wafer W surface, be adsorbed in carrying out repeatedly according to above-mentioned order containing the oxidation of composition of Si gas and the plasma modification of resultant of reaction of wafer W surface, thus stacked resultant of reaction and form film.
Herein, as mentioned above, electrical wiring structure is formed with in the inside of wafer W, but, block electric field owing to being provided with Faraday shield 95 between plasma generation portion 80 and wafer W, therefore, it is possible to suppress the electric injury caused this electrical wiring structure.
Adopt above-mentioned embodiment, when arranging plasma generation portion 80 to carry out the modification of resultant of reaction, this plasma body generating unit 80 is contained in the inside of framework 90, and is provided with Faraday shield 95 between plasma generation portion 80 and wafer W.Therefore, it is possible to block the electric field produced in plasma generation portion 80, on the other hand, magnetic field can be made to reach in vacuum vessel 1 via the slit 97 formed in Faraday shield 95.Thus, the electric injury caused owing to can suppress the electrical wiring structure of plasma body to the inside of wafer W also carries out modification, has good film quality and the film of electrical characteristic therefore, it is possible to obtain.
In addition, owing to being provided with Faraday shield 95, therefore, as shown in embodiment described later, the damage (etching) that plasma body causes quartz components such as frameworks 90 can be suppressed.Therefore, it is possible to the long lifetime seeking above-mentioned quartz components also can suppress the generation of polluting, and, can suppress because of quartz (SiO 2) to film (SiO 2) in be mixed into and the uneven homogenize of the thickness caused.
Further, owing to being provided with framework 90, therefore, it is possible to make plasma generation portion 81,82 close to the wafer W on universal stage 2.Therefore, even if carrying out, in the such higher pressure atmosphere (low vacuum) of film forming process, also can suppressing the inactivation of the ion in plasma body, free radical and can good modification being carried out.And owing to being provided with jut 92 in framework 90, therefore O type ring 11d is not exposed in plasma space 10.Therefore, it is possible to suppress such as fluorine set member being mixed into wafer W contained by O type ring 11d, and the long lifetime of this O type ring 11d can be sought.
In addition, be formed with jut 92 at the lower surface of framework 90, and make the sense of rotation upstream side of gas jetting hole 33 towards universal stage 2 of plasma generation gas jet 34.Therefore, even if be low discharge as mentioned above from the airshed of plasma generation gas jet 34 injection, also O can be suppressed 3gas, N 2gas enters the lower zone of framework 90.Further, the pressure of pressure higher than other regions (such as treatment zone P1, P2) in the region (plasma space 10) being configured with plasma generation gas jet 34 is made.Due to above situation, NO can be suppressed xgas generates in plasma space 10, therefore, it is possible to suppress by NO xthe corrosion of the component in the vacuum vessel 1 that gas causes, therefore, it is possible to the metallic pollution suppressing wafer W.Further, as mentioned above, due to can O be suppressed 3gas, N 2gas etc. enter the lower side of framework 90, therefore, when utilizing the film deposition system shared to carry out film forming process and modification, such as owing to arranging separately venting port, pump without the need to processing between gas jet 32 in framework 90 and second, and without the need to processing between gas jet 32 in this framework 90 and second, separated region D is set, therefore, it is possible to simplification device structure.
In addition, when configuring framework 90, because side ring 100 place of the outer circumferential side in this framework 90 is formed with gas flow path 101, therefore, it is possible to avoid this framework 90 and discharge each gas well.
And, owing to accommodating plasma generation portion 81,82 in the inside of framework 90, therefore, it is possible to be configured in the region (exterior lateral area of vacuum vessel 1) of air atmosphere in above-mentioned plasma generation portion 81,82, the maintenance in plasma generation portion 81,82 is thus made to become easy.
Herein, owing to accommodating plasma generation portion 81,82 in the inside of framework 90, therefore, such as, in C side, central part region, the end in plasma generation portion 81 is with separately corresponding with the gauge of the sidewall of this framework 90 amount of the rotation center of universal stage 2.Therefore, from the result of simulation described later, plasma body is difficult to the end in C side, central part region reaching wafer W.On the other hand, make framework 90(plasma generation portion 81 to make plasma body reach the end in C side, central part region of wafer W) be formed into deflection C side, central part region position time, as mentioned above, central part region C narrows.In this case, process gas likely to mix in the C of central part region each other.But, in the present invention, owing to being formed with maze-type structure portion 110 and having played the effect of gas flow path in the C of central part region, therefore, can while guarantee wider plasma space 10 on the radial direction of universal stage 2, suppress the mixing of process gas each other in the C of central part region and N 2gas is to the inflow in this plasma space 10.
And the degree of the modification making wafer W on the radial direction of universal stage 2 owing to being provided with plasma generation portion 81,82 is consistent, therefore, it is possible to obtain the film with uniform film quality in whole.
In the above example, the film forming of resultant of reaction that hocketed and the modification of this resultant of reaction, but, also can resultant of reaction be carried out modification to the duplexer of this resultant of reaction after stacked such as 70 layers (thickness of about 10nm) left and right.Specifically, Si gas and O is contained in supply 3gas also, during carrying out the film forming process of resultant of reaction, stops to plasma generation portion 81,82 supply high frequency rate electric power.Then, after formation duplexer, stop above-mentioned containing Si gas and O 3the supply of gas to plasma generation portion 81,82 supply high frequency rate electric power.When carry out such what is called in the lump modification, also can obtain the effect identical with above-mentioned example.
Herein, other examples of the film deposition system of above-mentioned explanation are enumerated.In figures 14 and 15, show only be provided with a plasma generation portion 80 and this plasma body generating unit 80 when overlooking to be the example that the mode of general square shape (roughly octagon) is configured with antenna 83.In this example embodiment, slit 97 also becomes large mode with its width dimensions d1 along with going towards the region leaving this opening portion 98 from the region close to opening portion 98 and is formed, but eliminates diagram.
Figure 16 shows and two plasma generation portions 81,82 is configured to general square shape as Figure 14 and Figure 15 and is configured in plasma generation portion 81 inside the radial direction of universal stage 2 and plasma generation portion 82 is configured in the example outside above-mentioned radial direction.In this example embodiment, above-mentioned plasma generation portion 81,82 is to be wound with antenna 83 respectively for mode of the same area each other.In addition, Figure 16 represents the situation of top board 11 viewed from upper side, and Figure 16 schematically depict the antenna 83 in above-mentioned plasma generation portion 81,82.Following Figure 17 describes too.
In fig. 17, as Figure 14 and Figure 15, two plasma generation portions 81,82 are configured to general square shape, and, for plasma generation portion 81, equally with above-mentioned Fig. 8 on the radial direction of universal stage 2, be configured with antenna 83, on the other hand, for plasma generation portion 82, antenna 83 is configured in the peripheral part side of universal stage 2.
Figure 18 represents that the Faraday shield 95 by above-mentioned is embedded in the example of the inside of framework 90.Specifically, the handling of upper surface that the framework 90 in the below in plasma generation portion 80 is formed freely, and have been dismantled the position behind this upper surface and can have been held Faraday shield 95.That is, as long as Faraday shield 95 is located between plasma generation portion 80 and wafer W.
Figure 19 represents inside plasma generation portion 80 and Faraday shield 95 not being contained in framework 90 and the example above-mentioned plasma generation portion 80 and Faraday shield 95 being configured in the top of top board 11.In this example embodiment, the top board 11 of the below in plasma generation portion 80 is such as made up of dielectric materials such as quartz as the different component of the top board 11 from other positions, and the lower surface circumference of the top board 11 of the below in plasma generation portion 80 is connected with the top board 11 at other positions above-mentioned by means of O type ring 11d as described above throughout the circumferential airtightly.
Figure 20 represents the example not configuring side ring 100.That is, side ring 100 is the components for making the clean air such as used when device clean not spread to the lower zone of universal stage 2.Thus, when not cleaning, also side ring 100 can not be set.
Figure 21 represents does not make antenna 83 make along vertical axis direction winding the example that antenna 83 reels along horizontal axis direction.Specifically, the axis that this antenna 83 extends in circular arc around the sense of rotation along universal stage 2 reels.In addition, the part outside antenna 83 and Faraday shield 95 is eliminated in Figure 21.
In addition, in the above example, describe will containing Si gas and O 3gas is according to containing Si gas and O 3the sequentially feeding of gas to wafer W after the film of forming reactions resultant, utilize plasma generation portion 80 to carry out the example of modification to this resultant of reaction, but, also can to the O used when the film of forming reactions resultant 3gas carries out plasmarized.Namely, as shown in figure 22, in this example embodiment, above-mentioned process gas jet 32 is not set, but the composition containing Si gas be adsorbed on wafer W is oxidized and forming reactions resultant in plasma space 10, and in this plasma space 10, modification is carried out to this resultant of reaction.In other words, the gas to the plasma generation of plasma space 10 supply is also used as the second process gas.Thus, plasma generation gas jet 34 is also used as process gas jet 32.By making the composition containing Si gas on the surface being adsorbed in wafer W be oxidized in plasma space 10 like this, do not need the ozonizer processing gas jet 32, therefore, it is possible to reduce the cost of device.In addition, O is generated by position directly over wafer W 3gas, such as, correspondingly can shorten O with the length dimension of process gas jet 32 3the stream of gas, therefore, it is possible to suppress O 3the inactivation of gas and good oxidation can be carried out to the above-mentioned composition containing Si gas.
In above each example, as the material forming Faraday shield 95, in order to make magnetic field permeates as far as possible, preferably use the material that relative magnetic permeability is as far as possible low, specifically, also can use silver (Ag), aluminium (Al) etc.In addition, as the quantity of the slit 97 of Faraday shield 95, if very little, then the magnetic field arrived in vacuum vessel 1 diminishes, on the other hand, if too much, then be difficult to manufacture Faraday shield 95, therefore, such as, relative to the 1m length of antenna 83, the quantity of preferred slit 97 is 100 ~ about 500.In addition, the gas jetting hole 33 of plasma generation gas jet 34 is formed in the mode of the sense of rotation upstream side towards universal stage 2, but, also can configure this gas jetting hole 33 in the mode in side or downstream side downward.
As the material forming framework 90, also can substitute quartz and use aluminum oxide (Al 2o 3), the anti-plasma etching material such as yttrium oxide, can also such as at the above-mentioned anti-plasma etching material of surface application of パ イ レ Star Network ス ガ ラ ス (sending Simon Rex glass: pyrex glass) (thermal glass of corning company, trade mark) etc.That is, as long as by the resistance of plasma, higher and magnetic field permeable material (dielectric material) is formed framework 90.
In addition, insulcrete 94 is configured in the top of Faraday shield 95 and makes this Faraday shield 95 and antenna 83(plasma generation portion 80) between insulate, but, also can not configure this insulcrete 94, but such as utilize quartz to wait insulating material cover antenna 83.
In addition, in the above example, use is described containing Si gas and O 3gas forms the example of silicon oxide film, but, such as also can use respectively containing Si gas and ammonia (NH 3) gas processes gas as first and the second process gas forms silicon nitride film.In this case, as the process gas for generation of plasma body, use argon gas and nitrogen or ammonia etc.
Further, such as also TiCl can be used respectively 2(titanium chloride) gas and NH 3(ammonia) gas forms titanium nitride (TiN) film as the first process gas and the second process gas.
In this case, as wafer W, use the substrate be made up of titanium, generate gas as generation of plasma body, use argon gas and nitrogen etc.In addition, the process gas of more than three kinds can also be supplied in order and stacked resultant of reaction.Specifically, also such as Sr(THD can be supplied to wafer W) 2[bis (tetra methyl heptandionate) strontium: two (dipivaloylmethane acid) strontium], Sr(Me5Cp) 2sr raw material and such as Ti(OiPr such as [bis(pentamethylcyclopentadienyl) strontium: two (pentamethylcyclopentadiene base) strontium]) 2(THD) 2[(bisisopropoxo) (bis (tetramethylheptanedionato))-titanium): two isopropoxy (bis-tetramethyl heptadione acid) titanium], Ti(OiPr) the Ti raw material such as [(tetraisopropoxo)-titanium:(tetraisopropoxy titanium)], backward wafer W supply O 3gas, thus the stacked film be made up of the STO film as the oxide film containing Sr and Ti.In addition, supply from gas jet 41,42 to separated region D to give N 2gas, but, as this separated region D, also can arrange for managing the wall portion carrying out between region P1, P2 dividing throughout, and not configure gas jet 41,42.
Further, as antenna 83, be configured in the region (inside of framework 90 or top board 11) dividing out airtightly from the interior region of vacuum vessel 1, but antenna 83 also can be configured in the interior region of vacuum vessel 1.Specifically, such as also antenna 83 can be configured in the position of the lower surface side slightly on the lower than top board 11.In this case, in order to make antenna 83 not be etched by the plasma, such as, the dielectric materials such as quartz are utilized to apply the surface of this antenna 83.In addition, in this case, in order to make Faraday shield 95 not be etched by the plasma equally, between antenna 83 and wafer W, quartz is utilized to wait the surface of dielectric material coating Faraday shield 95.Further, as antenna 83, except the structure of the winding in coiled type, base end side also can be adopted such as to be inserted into airtightly from the outside of vacuum vessel 1 in this vacuum vessel 1 and to make another side towards the structure of the linearly extension of central part region C.
In the example above; do not contact everywhere to protect the inner-wall surface of vacuum vessel 1 and top board 11 that process gases is (specifically; when attending device; clean air from nozzle 31,32 supplies), be provided with not shown protective guard by the position processing atmosphere side across small gap than above-mentioned inner-wall surface and top board 11.Further, in order to the pressure making the slight pressure in above-mentioned gap be greater than process atmosphere, from not shown gas supply part to this gap supply sweeping gas, but explanation is eliminated.
Herein, in order to make the degree of plasma modification consistent with peripheral part side in the central part side of universal stage 2, in above-mentioned Fig. 8, describe the example being also provided with the second plasma generation portion 82 for generation of plasma body except the first plasma generation portion 81 except being provided with on the radial direction of universal stage 2 for generation of plasma body in above-mentioned peripheral part side, but, two plasma generation portions 81,82 also can not be set and adjust the configuration layout of the slit 97 of Faraday shield 95.
That is, as described in detail, it seems from the wafer W of universal stage 2, compared with the outer edge portion side of universal stage 2, longer in the irradiation time of the plasma body of the central part side of universal stage 2.Therefore, compared with outer edge portion side, there is in central part side the more tendency of plasma modification.Therefore, in order to make the degree of the plasma modification on the radial direction of universal stage 2 consistent, the configuration layout of the slit 97 of Faraday shield 95 can also be adjusted.Specifically, the plasma body in vacuum vessel 1 due to the elect magnetic field that produces in plasma generation portion 80, the magnetic field of the slit 97 that have passed Faraday shield 95 produces.Therefore, in the following examples, compared with the outer edge portion side that the degree of plasma modification is less, in the more central part side of plasma modification, make the port area of slit 97 less, to make the magnetic field in arrival vacuum vessel 1 diminish.
For such example, shown in Figure 15 described above, illustrate that antenna 83 is formed as roughly elongated octagon and is only provided with a plasma generation portion 80(being only provided with the first plasma generation portion 81) situation.First, the configuration layout of the slit 97 of Figure 15 is described again with reference to Figure 23.On the long side direction (radial direction of universal stage 2) of antenna 83, each slit 97 is formed as roughly rectangle, at the curved part (the central part side of universal stage 2 and outer edge portion side) of antenna 83, from the outside of the wrapping range of antenna 83 more towards inner side, the width dimensions d1 of each slit 97 is less and in so-called wedge shape.Further, in this Figure 23 (Figure 15), in central part side and the outer edge portion side of universal stage 2, the above-mentioned width dimensions d1 of each slit 97 is consistent.In addition, in fig 23, illustrate with dashed lines antenna 83, eliminate the explanation at the position beyond to Faraday shield 95.Following Figure 24 ~ Figure 26 is described too.
Then, below illustrate to make the degree of plasma modification consistent and example of adjusting the configuration layout of slit 97 on the radial direction of universal stage 2.Figure 24 represents the example being formed with the length dimension auxiliary slit 97a shorter than the length dimension of other slit 97 of outer edge portion side in the central part side of universal stage 2.Namely, compared with other slit 97, the length dimension such as short 20mm of this auxiliary slit 97a, this auxiliary slit 97a is formed in the region of the position of the outer edge side of being slightly partial to Faraday shield 95 from the position close to above-mentioned opening portion 98 to the lower position than antenna 83.Further, in the central part side of universal stage 2, alternately configure this auxiliary slit 97a and slit 97, be formed with auxiliary slit 97a at 9 positions.
Thus, the position in the outer part of the wrapping range of the antenna 83 in the central part side than universal stage 2, with auxiliary slit 97a correspondingly make between slit 97,97 separate size d2 than other positions slit 97,97 between to separate size d2 large.That is, in fig. 24, can say, the port area in order to the slit 97 making the central part side at universal stage 2 is less than the port area of the slit 97 in the outer edge portion side of universal stage 2, adjusts shorter by the length dimension of slit 97.
Also, as shown in embodiment described later, by adjusting the configuration layout of slit 97 like this, make the degree of the plasma modification on the radial direction of universal stage 2 consistent.Therefore, the degree of the plasma modification such as in the face making wafer W is consistent, the Faraday shield 95 in Figure 24 can be used, on the other hand, when the degree of the plasma modification making the central part side of universal stage 2 is better than the degree of the plasma modification of outer edge portion side, the Faraday shield 95 in above-mentioned Figure 23 can be used, thus, can according to fabrication procedures, technique and select Faraday shield 95.
Now, in the central part side of universal stage 2, be configured with auxiliary slit 97a and slit 97, but, auxiliary slit 97a also can be set and carry out alternative slit 97 and arrange multiple slit 97a, as the quantity of auxiliary slit 97a, also can be 10 ~ 50.
In addition, by antenna 83 is set as roughly elongated octagon, can the cost of restraining device.Namely, as mentioned above, reach in vacuum vessel 1 to make the magnetic field produced in plasma generation portion 80, framework 90 is made up of highly purified quartz, and framework 90 is greater than the size (making quartz components be positioned at the mode of the whole lower side of antenna 83) of antenna 83 mode with the size of the framework when overlooking 90 is formed.Thus, the size of the antenna 83 when overlooking is larger, then also need to make the size of the framework 90 of the lower side of this antenna 83 larger, thus causes the cost increase of device (framework 90).Therefore, in the present invention, in order to reduce the size of the framework 90 when overlooking as far as possible, make the position of the position of the sense of rotation upstream side by universal stage 2 in antenna 83 and downstream close to each other.
Figure 25 shows and in above-mentioned Figure 24, not to arrange auxiliary slit 97a and in the central part side of universal stage 2 by the example that the separately size d2 between slit 97,97 sets identical with Figure 24.Thus, compared with the Faraday shield 95 in Figure 23, in the central part side of universal stage 2, the Faraday shield 95 in Figure 25 can say in every two that the mode saving configures slit 97.The separately size d2 between slit 97,97 is made to be greater than separately size d2 between the slit 97,97 of outer edge portion side by the central part side like this at universal stage 2, being alternatively the spacing by expanding slit 97, the degree of the modification of plasma body can be made further consistent on the radial direction of universal stage 2.As the spacing of the slit 97 of the central part side at universal stage 2, also can be about 4mm ~ 12mm, can also be that slit goes towards outer edge portion side from the central part side of universal stage 2 and diminishes.
Figure 26 shows and makes the width dimensions d1 of slit 97 be less than the example of the width dimensions d1 of the slit 97 in outer edge portion side in the central part side of universal stage 2.Specifically, in above-mentioned central part side, the width dimensions d1 of slit 97 is such as 2mm ~ 3mm, and the slit 97 with this width dimensions d1 is such as configured with 9.In such example, also can obtain the effect identical with above-mentioned each example.
In Figure 24 ~ Figure 26 described above, port area in order to the slit 97 making the central part side at universal stage 2 is less than the port area of the slit 97 in outer edge portion side, the length dimension of slit 97, spacing and width dimensions d1 are adjusted respectively, but also can combine the length dimension of above-mentioned slit 97, spacing and width dimensions d1.That is, also can combine as follows: in the central part side of universal stage 2, such as, make the length dimension of slit 97 be shorter than the length dimension of the slit 97 in outer edge portion side, and expand the spacing of slit 97, or reduce width dimensions d1.
In addition, describe and make in the central part side of universal stage 2 example that the port area of slit 97 is less, but, also the port area of slit 97 can be made larger in outer edge portion side.Specifically, in the outer edge portion side of universal stage 2, the length dimension of slit 97 also can be made to be greater than the length dimension of the slit 97 in central part side, or to make the spacing of slit 97 less, or the width dimensions d1 of slit 97 can also be made larger.In addition, the configuration layout of slit 97 also can be adjusted respectively in the central part side of universal stage 2 and outer edge portion side.But, in above-mentioned example, in the outer edge portion side of universal stage 2, the length dimension of slit 97 and width dimensions d1 are set larger respectively as far as possible, and above-mentioned spacing is set less as far as possible, therefore, preferably the configuration layout of the slit 97 of the central part side at universal stage 2 is adjusted.
In addition, shown in Fig. 8 described above, when being configured with two plasma generation portions 81,82, making antenna 83 in when roughly fan-shaped, also can the configuration layout of slit 97 to Faraday shield 95 same with Figure 24 ~ Figure 26 adjust.
embodiment
Below, each experimental example using above-mentioned film deposition system to carry out is described.
(experimental example 1)
First, evaluate with lower device, in this device, maze-type structure portion 110 is not set, but make the length dimension of this central part region C longer to make process gases everywhere not mix mutually in the C of central part region each other.Thus, compared with each example illustrated with above-mentioned Fig. 1 etc., the opening portion 11a of top board 11 and framework 90 make to be positioned in the end of the rotation center side of universal stage 2 position of deflection outer circumferential side about 15mm in order to avoid this central part region C.In this example embodiment, be only provided with a plasma generation portion 80, and Figure 14 and Figure 15 described above is configured with plasma generation portion 80 like that.This device is used to carry out film forming process and modification as described above.In addition, the detailed experiment condition of above-mentioned film forming process and modification is eliminated.
Its result, as shown in figure 27, compared with not carrying out the situation of plasma modification, by carrying out plasma modification, reduces individual pen yield polymer films (cycle rate).It can thus be appreciated that, by carrying out plasma modification, facilitating the densification of film and defining firm film.Thus, be arranged between plasma generation portion 80 and wafer W even if known by Faraday shield 95, plasma body also can reach this wafer W.
Now, the film thickness distribution of film as shown in Figure 28 is such, is greater than the thickness in the region of being slightly partial to the central authorities of wafer W than each position at the thickness at the rotation center side of universal stage 2 and the position of outer circumferential side.Thus, the situation being less than the intensity of the plasma body at other position in the intensity of the plasma body of above-mentioned central side and outer circumferential side is shown.Therefore, for above-mentioned central side, the known framework 90 that preferably makes is close to (arranging maze-type structure portion 110) this central side.In addition, for outer circumferential side, knownly preferably make the amount of the plasma body of outer circumferential side more (two plasma generation portions 81,82 be set and make the High frequency power of outer circumferential side be greater than the High frequency power of central side, or being configured to fan-shaped by plasma generation portion 80).In addition, " the individual pen yield polymer films " of Figure 27 represents that universal stage 2 often turns the film-forming amount (thickness) of 1 circle.
(experimental example 2)
From above experimental example 1, by framework 90 being configured close to C side, central part region, the degree of modification of this C side, central part region can be made consistent with the degree of the modification at other positions.In this case, the size of the lower side being in universal stage 2 is less than for the size being in the upper side of universal stage 2 of the core 21 supporting universal stage 2.In addition, top board 11 is owing to being formed with opening portion 11a, and therefore intensity is likely not enough.Therefore, in this experiment, for this top board 11, convex shaped part 4 and the connection section etc. of protuberance 5 whether can bear top board 11 weight, the loads such as pressure difference load when being evacuated in vacuum vessel 1 have been carried out strength analysis.In this analysis; when the pressure between the protective guard being used for protecting inner-wall surface and the top board 11 of above-mentioned vacuum vessel 1 and above-mentioned inner-wall surface and top board 11 and the pressure that processes atmosphere are set to Pm and Pn respectively, the pressure difference △ P(Δ P=Pm-Pn to above-mentioned Pm and Pn) calculate for the situation of 1Torr and 4Torr.
As a result, as shown in Figure 29 and Figure 30, in either case known, the intensity of the connection section between convex shaped part 4 and protuberance 5 is all enough.In addition, side ring 100 has sufficient intensity too.
And as shown in figure 31, top board 11 also has sufficient intensity.
(experimental example 3)
Then, to wafer W(specifically, being the grid oxidation film of the device formed on wafer W) electric injury that is subject to because what kind of change is the presence or absence of Faraday shield 95 produce evaluates.In an experiment, prepared multiple (six kinds) simulated wafer that the tolerance of electric injury is different from each other, plasma body has been irradiated to this wafer.
When not arranging Faraday shield 95, as shown in the epimere of Figure 32, known arbitrary wafer (wafer of right-hand member represents the result of the wafer that above-mentioned tolerance is maximum, and list above-mentioned tolerance go from this wafer towards left side and the result of the wafer diminished gradually) all receives electric injury.On the other hand, as shown in the stage casing of Figure 32, by arranging Faraday shield 95, the electric injury of arbitrary wafer is reduced significantly.Thus, by arranging Faraday shield 95, can the insulation breakdown of suppressor grid oxide film.
Now, certain part of the shape of antenna 83 that known experiment uses deviate from slit 97 towards mutually orthogonal direction.Therefore, with make antenna 83 throughout the circumferential with slit 97 towards orthogonal mode, adjustment again testing is carried out to antenna 83.As a result, as shown in the hypomere of Figure 32, in above-mentioned arbitrary wafer, nearly all do not find electric injury.
(experimental example 4)
Then, to whether carrying out plasma modification after formation film electrical characteristic (voltage-resistent characteristic of oxide film) can be made how to change test, and test electrical characteristic (voltage-resistent characteristic of oxide film) can be made with or without Faraday shield 95 how to change.That is, make mercury probe contact with the oxide film on the surface of wafer W, measure voltage when electric stress (electric current) be applied with to this oxide film.Thus, when can say that voltage is less, leakage current is less, and the impurity concentration contained by oxide film is less.
As a result, as shown in figs. 33 and 34, compared with not carrying out the example of plasma modification, by carrying out plasma modification, electrical characteristic are improved, electrical characteristic reach roughly the same degree with the electrical characteristic of heat oxide film.Specifically, when not carrying out plasma modification, 1 × 10 is applied with -8a/cm 2current density time electric field be 0.4MV/cm, when having carried out plasma modification, electric field when being applied with same current density has been 8MV/cm.Thus, known: by carrying out plasma modification, impurity concentration and the less oxide film of leakage current can be obtained.
Now, the presence or absence of Faraday shield 95 does not cause the change of electrical characteristic.Thus, known Faraday shield 95 does not have that article on plasma is modifies brings detrimentally affect.Figure 33 represents carried out the example of plasma modification in the lump after the film forming of film, Figure 34 represent universal stage 2 often rotate one time time carried out the example of plasma modification.In this experiment, when not arranging Faraday shield 95, the winding times of antenna 83 is set to 1 circle, and, when being provided with Faraday shield 95, about the winding times of antenna 83 is set to 3 circles.
(experimental example 5)
In this experimental example, have studied the wet etching rate of film.That is, film is finer and close, and wet etching rate is lower, and on the other hand, the such as impurity contained in film etc. are more, and wet etching rate is higher, therefore, utilizes wet etching rate to measure the density of film.In this experiment, wafer is immersed in aqueous fluorine acid solution, the thickness of the film that be etched by aqueous fluorine acid solution is calculated.
As a result, as shown in figure 35, with compared with the situation (each reference example) of not carrying out plasma modification after forming film, by carrying out plasma modification film forming simultaneously, thin film densification is made.Further, relative to the result of comparative example (not having Faraday shield 95), the film being provided with the example (embodiment 31,32) of Faraday shield 95 has the film quality of roughly the same degree.
Therefore, can be learnt by this experiment, Faraday shield 95 does not have that article on plasma is modifies brings detrimentally affect yet.In Figure 35, embodiment 31 represents has carried out the example of plasma modification when universal stage 2 often rotates one time, and embodiment 32 represents does not carry out plasma modification but making universal stage 2 rotate 9 circles and stopped the supply of process gases everywhere after stacked resultant of reaction to carry out the example of plasma modification.In addition, equally, in this experiment, when not arranging Faraday shield 95, the winding times of antenna 83 is set to 1 circle, and, when being provided with Faraday shield 95, about the winding times of antenna 83 is set to 3 circles.
Figure 36 represents the distribution of the thickness of the film carried out after wet etching.The thickness of known film does not almost change because of the presence or absence of Faraday shield 95 yet.
(experimental example 6)
Figure 37 represents can make the homogeneity of thickness how change the result evaluated to the presence or absence of Faraday shield 95.In the result shown in the epimere of Figure 37, represent " there is no modification ", " modification in the lump (there is no Faraday shield 95) " and " modification in the lump (having Faraday shield 95) " successively from left side towards right side.From this result, carry out plasma modification to make the roughly the same mode of film thickness distribution after the film forming of film thickness distribution and film.That is, film thickness distribution does not almost change because of plasma modification.In addition, in the hypomere of Figure 37, left side represents " often enclosing modification (not having Faraday shield 95) " and " often enclosing modification (having Faraday shield 95) ".
(experimental example 7)
Then, the sputtering amount of quartz can be made how to change the presence or absence of Faraday shield 95 to test.In this experiment, do not supply process gases everywhere, namely do not form film, but make the universal stage 2 being placed with wafer rotate and pass through in plasma space 10.As a result, as shown in figure 38, by arranging Faraday shield 95, the sputtering amount of quartz is significantly reduced.
In addition, use the plasma generation portion of CCP type (making the form that plasma body produces between the electrode of a pair) to carry out identical experiment, obtain the result of Figure 39.Thus, known by using the plasma generation portion as described above antenna 83 being wound into the ICP type of coiled type, about making the sputtering amount of quartz reduce by the order of magnitude of about 100 times.
(experimental example 8)
Figure 40 shows the result of following experiment, namely, when using the Faraday shield 95 of above-mentioned Figure 24 (being provided with the example of the length dimension auxiliary slit 97a shorter than the length dimension of other slit 97) and Figure 25 (expanding the example of the spacing of slit 97), with employ Figure 23 (not adjusting the configuration layout of slit 97) Faraday shield 95 situation compared with, how the degree of plasma modification can change.In this experiment, do not supply process gases everywhere, but for giving plasma generation gas (Ar gas, O 2gas and NH 3gas) and this gas is carried out plasmarized.Further, in order to confirm the amount of the plasma body that wafer W is exposed to, the thickness of the oxide film formed for utilizing plasma body to make surface (silicon layer) oxidation of wafer W, the radial direction of universal stage 2 is measured at multiple position respectively.
As a result, by adjusting the configuration layout of slit 97, the homogeneity of the thickness on the radial direction of universal stage 2 is improved.Specifically, in the central part side of universal stage 2, when making the port area of slit 97 less, the thickness of the oxide film of this central part side reduces.In addition, the port area of the slit 97 of the central part side of universal stage 2 is less, and above-mentioned homogeneity is better.That is, the homogeneity of thickness improves according to the order of Figure 23 < Figure 24 < Figure 25.Thus, known: even if when carrying out the film forming process of resultant of reaction and carry out the plasma modification process of this resultant of reaction, the degree of plasma modification also can be made consistent on the radial direction of universal stage 2.
Above, describe preferred embodiment of the present invention, but the present invention is not limited to above-mentioned specific embodiment, in the scope of the purport of the present invention described in claims, can various distortion and change be carried out.
The application, based on No. 2011-107350, the Japanese patent application of filing an application on May 12nd, 2011 and on September 12nd, 2011 and 2011-198396 CLAIM OF PRIORITY, quotes its full content at this.

Claims (22)

1. a film deposition system, wherein,
This film deposition system comprises:
Vacuum vessel, repeatedly supplies the first process gas and the second process gas in order to its inside;
Universal stage, it has the surface comprising substrate-placing region, and rotates in above-mentioned vacuum vessel;
First process gas supply part, it is for processing gas to first area supply above-mentioned first;
Second process gas supply part, it supplies above-mentioned second for the second area separated across separated region and above-mentioned first area in the circumference at above-mentioned universal stage and processes gas;
Plasma generating gases supply unit, it for supplying plasma generation gas in above-mentioned vacuum vessel;
Antenna, it is relative with an above-mentioned surface of above-mentioned universal stage, produces plasma body for utilizing jigger coupling to make above-mentioned plasma generation gas in plasma space;
Faraday shield, its ground connection, is located between above-mentioned antenna and above-mentioned plasma space, and have with multiple slits of arranging on the direction of above-mentioned antenna orthogonal.
2. film deposition system according to claim 1, is characterized in that,
Above-mentioned Faraday shield is made up of the tabular body of electroconductibility.
3. film deposition system according to claim 1, is characterized in that,
This film deposition system also comprises:
Dielectric material, it is for demarcating above-mentioned antenna and above-mentioned Faraday shield and above-mentioned plasma space airtightly.
4. film deposition system according to claim 1, is characterized in that,
This film deposition system also comprises:
Framework, it is made up of dielectric material;
Top board, it has the opening portion be communicated with above-mentioned universal stage;
Containment member, it is for connecting above-mentioned framework and above-mentioned top board;
Above-mentioned framework for holding above-mentioned antenna,
Above-mentioned opening portion has peristoma portion,
Above-mentioned containment member is formed in above-mentioned peristoma portion.
5. film deposition system according to claim 4, is characterized in that,
This film deposition system also comprises:
Divided gas flow supply unit, it is for supplying divided gas flow to above-mentioned separated region;
Jut, it stretches out to the lower side in the circumference of the lower face side of above-mentioned framework,
The region of above-mentioned jut for stoping above-mentioned first process gas, above-mentioned second process gas and above-mentioned divided gas flow to enter the below of above-mentioned framework.
6. film deposition system according to claim 4, is characterized in that,
This film deposition system also comprises:
The current path of recess shape, it is located between the surrounding of above-mentioned universal stage and the inwall of above-mentioned vacuum vessel;
The cover body of ring-type, it is located at said flow path, have respectively with first row gas port and the second exhaust port of said flow communication,
Above-mentioned first row gas port is positioned at downstream side in the sense of rotation of above-mentioned universal stage, that be supplied to the first treatment zone of above-mentioned first process gas, and above-mentioned second exhaust port is positioned at the downstream side of the heating region being supplied to above-mentioned plasma generation gas.
7. film deposition system according to claim 1, is characterized in that,
Above-mentioned antenna has winding-structure, and when overlooking, the mode expanded to go from the rotation center side of above-mentioned universal stage towards outer circumferential side is configured to fan-shaped.
8. film deposition system according to claim 4, is characterized in that,
Above-mentioned plasma generating gases supply unit extends on the radial direction of above-mentioned universal stage and on side, is formed with the gas jet of multiple gas ejection ports,
Above-mentioned plasma generating gases supply unit is configured in the sense of rotation upstream side of in the lower zone of above-mentioned framework, above-mentioned universal stage,
Above-mentioned gas jet orifice is respectively towards above-mentioned upstream side.
9. film deposition system according to claim 1, is characterized in that,
Above-mentioned slit is less than the port area of the above-mentioned slit of the outer edge portion side at above-mentioned universal stage mode with the port area of the above-mentioned slit of the central part side at above-mentioned universal stage is formed.
10. a film deposition system, wherein,
This film deposition system comprises:
Vacuum vessel, repeatedly supplies the first process gas and the second process gas in order to its inside;
Universal stage, it has the surface comprising substrate-placing region, and aforesaid substrate mounting region is rotated in above-mentioned vacuum vessel;
First process gas supply part, it is for processing gas to first area supply above-mentioned first;
Plasma generating gases supply unit, it supplies above-mentioned second for the second area separated across separated region and above-mentioned first area in the circumference at above-mentioned universal stage and processes gas, and supplies plasma generation gas in above-mentioned vacuum vessel;
Antenna, it is relative with an above-mentioned surface of above-mentioned universal stage, produces plasma body for utilizing jigger coupling to make above-mentioned plasma generation gas in plasma space;
Faraday shield, its ground connection, is located between above-mentioned antenna and above-mentioned plasma space, and have with multiple slits of arranging on the direction of above-mentioned antenna orthogonal.
11. film deposition systems according to claim 10, is characterized in that,
Above-mentioned Faraday shield is made up of the tabular body of electroconductibility.
12. film deposition systems according to claim 10, is characterized in that,
This film deposition system also comprises:
Dielectric material, it is for demarcating above-mentioned antenna and above-mentioned Faraday shield and above-mentioned plasma space airtightly.
13. film deposition systems according to claim 10, is characterized in that,
This film deposition system also comprises:
Framework, it is made up of dielectric material;
Top board, it has the opening portion be communicated with above-mentioned universal stage;
Containment member, it is for connecting above-mentioned framework and above-mentioned top board,
Above-mentioned framework for holding above-mentioned antenna,
Above-mentioned opening portion has peristoma portion,
Above-mentioned containment member is formed in above-mentioned peristoma portion.
14. film deposition systems according to claim 13, is characterized in that,
This film deposition system also comprises:
Divided gas flow supply unit, it is for supplying divided gas flow to above-mentioned separated region;
Jut, it stretches out to the lower side in the circumference of the lower face side of above-mentioned framework,
The region of above-mentioned jut for stoping above-mentioned first process gas, above-mentioned second process gas and above-mentioned divided gas flow to enter the below of above-mentioned framework.
15. film deposition systems according to claim 13, is characterized in that,
This film deposition system also comprises:
The current path of recess shape, it is located between the surrounding of above-mentioned universal stage and the inwall of above-mentioned vacuum vessel;
The cover body of ring-type, it is located at said flow path, have respectively with first row gas port and the second exhaust port of said flow communication,
Above-mentioned first row gas port is positioned at downstream side in the sense of rotation of above-mentioned universal stage, that be supplied to the first treatment zone of above-mentioned first process gas, and above-mentioned second exhaust port is positioned at the downstream side of the heating region being supplied to above-mentioned plasma generation gas.
16. film deposition systems according to claim 10, is characterized in that,
Above-mentioned antenna has winding-structure, and when overlooking, the mode expanded to go from the rotation center side of above-mentioned universal stage towards outer circumferential side is configured to fan-shaped.
17. film deposition systems according to claim 13, is characterized in that,
Above-mentioned plasma generating gases supply unit extends on the radial direction of above-mentioned universal stage and on side, is formed with the gas jet of multiple gas ejection ports,
Above-mentioned plasma generating gases supply unit is configured in the sense of rotation upstream side of in the lower zone of above-mentioned framework, above-mentioned universal stage,
Above-mentioned gas jet orifice is respectively towards above-mentioned upstream side.
18. film deposition systems according to claim 10, is characterized in that,
Above-mentioned slit is less than the port area of the above-mentioned slit of the outer edge portion side at above-mentioned universal stage mode with the port area of the above-mentioned slit of the central part side at above-mentioned universal stage is formed.
19. 1 kinds of films, it repeatedly supplies to the inside of vacuum vessel the film that the first process gas and second processes gas in order, wherein,
This film comprises following operation:
Make the universal stage rotation a face side with substrate-placing region be located in vacuum vessel;
To the above-mentioned first process gas of first area supply;
The second area separated across separated region and above-mentioned first area in the circumference at above-mentioned universal stage supplies above-mentioned second and processes gas;
Plasma generation gas is supplied in above-mentioned vacuum vessel;
Use the antenna relative with an above-mentioned surface of above-mentioned universal stage and utilize jigger coupling to make above-mentioned plasma generation gas produce plasma body;
Faraday shield is used to stop passing through of the electric field component of the elect magnetic field produced around above-mentioned antenna, wherein, this Faraday shield ground connection, is located between above-mentioned antenna and above-mentioned plasma space, and have with multiple slits of arranging on the direction of above-mentioned antenna orthogonal.
20. films according to claim 19, is characterized in that,
When carrying out the operation producing above-mentioned plasma body, dielectric material is utilized above-mentioned antenna and above-mentioned plasma space to be demarcated airtightly, when carrying out the operation of above-mentioned prevention, above-mentioned dielectric material is utilized above-mentioned Faraday shield and above-mentioned plasma space to be demarcated airtightly.
21. films according to claim 19, is characterized in that,
Above-mentioned antenna is being contained in the operation carrying out producing above-mentioned plasma body under the state coupled together with above-mentioned framework by the top board with the opening portion be communicated with above-mentioned universal stage in by the framework that dielectric material is formed and by the containment member in the peristoma portion being formed in above-mentioned opening portion.
22. films according to claim 19, is characterized in that,
The above-mentioned Faraday shield being provided with slit is used to carry out the operation stoping above-mentioned electric field component to pass through, wherein, the mode that this slit is less than the port area of the slit of the outer edge portion side at above-mentioned universal stage with the port area of the slit of the central part side at above-mentioned universal stage is formed.
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CN102002685A (en) * 2009-09-01 2011-04-06 东京毅力科创株式会社 Film formation apparatus and film formation method

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