CN101345114A - Inductance coupling coil and inductance coupling plasma apparatus using the same - Google Patents
Inductance coupling coil and inductance coupling plasma apparatus using the same Download PDFInfo
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- CN101345114A CN101345114A CNA200710118653XA CN200710118653A CN101345114A CN 101345114 A CN101345114 A CN 101345114A CN A200710118653X A CNA200710118653X A CN A200710118653XA CN 200710118653 A CN200710118653 A CN 200710118653A CN 101345114 A CN101345114 A CN 101345114A
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Abstract
The invention discloses an inductance coupling coil and an inductance coupling plasma device which uses the coil, comprising an internal winding and an external winding; the relative position between the internal winding and the external winding can be adjusted; the internal winging and the external winding are respectively fixed on an internal winding bracket and an external winding bracket; the internal winding bracket and the external winding bracket are arranged on the upper part of a reaction chamber; the external winding bracket is fixed with a rack; the wall of the reaction chamber is provided with a gear which is meshed with the rack; in order to cause the relative position between the internal winding and the external winding to be adjustable, the relative position between the internal winding and the external winding can be adjusted so as to adjust the density of the plasma in the reaction chamber and lead the plasma to be uniformly distributed above the wafer of the reaction chamber, thus effectively adjusting the uniformity of the etching rate and improving the quality of the etching wafer. The inductance coupling coil and the inductance coupling plasma device are mainly applied to semiconductor wafer processing equipment and applicable for other similar equipment.
Description
Technical field
The present invention relates to a kind of semiconductor wafer process equipment accessory, relate in particular to a kind of inductance-coupled coil and use the inductance coupled plasma device of this coil.
Background technology
At present, along with the high speed development of electronic technology, people are more and more higher to the integrated level requirement of integrated circuit, and the working ability of semiconductor wafer constantly improves in this enterprise that will seek survival the product integrated circuit.Plasma device is widely used in the manufacturing process of making IC (integrated circuit) or MEMS (microelectromechanical systems) device.Wherein ICP (inductance coupled plasma device) is widely used in the technologies such as etching.Under low pressure, reacting gas is under the exciting of radio-frequency power, produce ionization and form plasma, the atom, molecule and the free radical isoreactivity particle that contain a large amount of electronics, ion, excitation state in the plasma, various physics and chemical reaction take place and form volatile product in these active reactive groups and the material surface that is etched, thereby the material surface performance is changed.
Inductance coupled plasma device as shown in Figure 1 is the structure that great majority adopt in the present semiconductor etching device.In semiconductor fabrication processes, the process gas that enters reaction chamber 3 from the air inlet 2 of dielectric window 1 central authorities is formed plasma, the material on plasma etching wafer 5 surfaces of generation by inductance-coupled coil 4 ionization of top.Molecular pump 6 gases discharges of extracting reaction chamber 3 out in the system from the gas outlet.In this course, the radio-frequency power that makes gas produce ionization formation plasma comes from inductance-coupled coil 4, the energisation mode that is applied at present on the inductance-coupled coil 4 is to add the 13.56MHz radio frequency, thereby make the magnetic field that has radio-frequency current to change in the inductance-coupled coil 4, according to Faraday's electromagnetic induction law, the magnetic field of this variation can induce electric field, thereby in reaction chamber 3, reacting gas is ionized into plasma, the plasma that is excited interacts with workpiece in chamber, and workpiece is carried out etching or deposition materials on workpiece.Workpiece generally is the semiconductor wafer with circular flat.
As shown in Figure 2, be the structure of the inductance-coupled coil of prior art one, be the snail structure, coil is a simplex winding.
The shortcoming of prior art one is, the plasma that inductance-coupled coil excited is very inhomogeneous, this inductance-coupled coil is stronger in reative cell central portion branch ELECTROMAGNETIC FIELD, and is therefore higher in the plasma density that central authorities produced, and makes etch rate very inhomogeneous.
As shown in Figure 3, be the structure of the inductance-coupled coil of prior art two, coil is a double winding, winding 2, outer winding 1 in comprising, interior winding 2 is fixed with the relative position of outer winding 1.Though interior winding 2 can be regulated electric current respectively with outer winding 1, because interior winding 2 is fixed with the relative position of outer winding 1, can not regulate, make that the adjustable window of technology is less, can not effectively regulate the uniformity of etch rate.
Summary of the invention
The purpose of this invention is to provide a kind of inductance coupled plasma device that can effectively regulate the inhomogeneity inductance-coupled coil of etch rate and use this coil.
The objective of the invention is to solve by the following technical programs:
Inductance-coupled coil of the present invention comprises interior winding, outer winding, it is characterized in that, the relative position between described interior winding and the outer winding can be regulated.
The inductance coupled plasma device of the above-mentioned inductance-coupled coil of application of the present invention, comprise reative cell, reative cell top is provided with dielectric window, the top of described dielectric window is provided with described inductance-coupled coil, and the interior winding of described inductance-coupled coil and the relative position between the outer winding can be regulated.
As seen from the above technical solution provided by the invention, inductance-coupled coil of the present invention and use the inductance coupled plasma device of this coil, because the relative position between interior winding and the outer winding can be regulated, the density that can come the indoor plasma of conditioned reaction by the relative position between winding in regulating and the outer winding, plasma is evenly distributed above the wafer of reative cell, can effectively regulate the uniformity of etch rate, improve the quality of etched wafer.Be mainly used in the semiconductor wafer process equipment.
Description of drawings
Fig. 1 is the structural representation of the inductance coupled plasma device of prior art;
Fig. 2 is the inductance-coupled coil structural representation of prior art one;
Fig. 3 is the inductance-coupled coil structural representation of prior art two;
Fig. 4 is the structural representation of inductance-coupled coil of the present invention;
Fig. 5 is the structural representation of inductance coupled plasma device of the present invention;
Fig. 6 is connected in parallel with outer winding for the interior winding of inductance-coupled coil of the present invention, and the circuit theory diagrams that are connected with the dual output adaptation;
Fig. 7 is that the interior winding of inductance-coupled coil of the present invention is connected with outer windings in series, and the circuit theory diagrams that are connected with single output matching device.
Embodiment
The preferable embodiment of inductance-coupled coil of the present invention is, as shown in Figure 4, winding 7, outer winding 9 in comprising, described in relative position between winding 7 and the outer winding 9 can regulate.Interior winding 7 and outer winding 9 can be separately fixed on interior winding support 10 and the outer winding support 15, at least one is travel(l)ing rest for interior winding support 10 and outer winding support 15, one of them support can be fixed, another support can be movable, also two supports 10,15 all can be designed to can be movable form, like this, the relative position change in the activity of support just can drive between winding 7 and the outer winding 9.
Interior winding 7 and outer winding 9 can be planar structure, also can be stereochemical structure, can one of them be planar structure also, and another is a stereochemical structure.
Interior winding 7 and outer winding 9 can adopt each other and be connected in parallel, also can adopt and be connected in series, in during connection between winding 7 and the outer winding 9 by flexibly connecting sheet 8 connections, interior winding 7 and outer winding 9 with flexibly connect between the sheet 8 and can be connected by screw, rivet etc.
The embodiment that the present invention uses the inductance coupled plasma device of above-mentioned inductance-coupled coil is, as shown in Figure 5, comprise reative cell 3, reative cell 3 tops are provided with dielectric window 1, the top of dielectric window 1 is provided with described inductance-coupled coil, and the interior winding 7 of described inductance-coupled coil and the relative position between the outer winding 9 can be regulated.
Interior winding 7 and outer winding 9 can be separately fixed on interior winding support 10 and the outer winding support 15, winding support 10 and outer winding support 15 are arranged on reative cell 3 tops, and the relative position between at least one support and the reative cell 3 can be regulated.
A specific embodiment:
Be fixed with tooth bar 14 on the outer winding support 15, the wall 11 of reative cell 3 is provided with gear 6, gear 6 and tooth bar 14 engagements.The rotating band carry-over bar 14 of gear 6 is up and down, and then drives outer winding support 15 and top outer winding 9 moves up and down, and makes the position up-down adjustment of outer winding 9 with respect to interior winding 7 and reative cell 3.In the present embodiment, interior winding support 10 can be fixed on the dielectric window 1, the position relative fixed in making between winding 7 and the reative cell 3.
Also can outer winding support is 15 fixing, interior winding support 10 can regulate, and outer winding support 15 and interior winding support 10 all can be regulated.The mode of regulating also is not limited to the rack-and-pinion drive system, and more simply, the cushion block that can use one group of different-thickness is regulated the distance of winding and quartz cover with certain winding bed hedgehopping by changing cushion block.
As shown in Figure 6, described interior winding and outer winding are connected in parallel, and are connected with adaptation respectively, and described adaptation is the dual output adaptation, has two outputs, and interior winding is connected with one of them output respectively with outer winding.
In the described dual output adaptation, first capacitor C 1, second capacitor C 2 are variable capacitance, by motor driven, are subjected to algorithm controls; But each output of dual output adaptation is connected with the variable capacitance of manual adjustments respectively, is respectively the 3rd capacitor C 3, the 4th capacitor C 4.The effect of first capacitor C 1 and second capacitor C 2 is to make matching network and load reach 50 Europe, and the effect of the 3rd capacitor C 3 and the 4th capacitor C 4 is the size of current of regulating in interior winding and the outer winding.Wherein the effect of transducer is to measure the impedance of adaptation input and be expressed as certain form (real part imaginary part form or mould argument form), informs controller, and controller uses certain algorithm to regulate first capacitor C 1 and second capacitor C 2 to reach coupling.
As shown in Figure 7, described interior winding is connected with outer windings in series, is connected with adaptation afterwards, and at this moment, adaptation can be single output matching device, also can be the dual output adaptation.
This structure of the present invention, because the relative position between interior winding and the outer winding can be regulated, the density that can come the indoor plasma of conditioned reaction by the relative position between winding in regulating and the outer winding, plasma is evenly distributed above the wafer of reative cell, can effectively regulate the uniformity of etch rate, improve the quality of etched wafer.
The present invention is mainly used in the semiconductor wafer process equipment, also is applicable to other similar equipment.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (10)
1, a kind of inductance-coupled coil comprises interior winding, outer winding, it is characterized in that, the relative position between described interior winding and the outer winding can be regulated.
2, inductance-coupled coil according to claim 1 is characterized in that, on winding support and the outer winding support, at least one was a travel(l)ing rest to described interior winding support with outer winding support in described interior winding and outer winding were separately fixed at.
3, inductance-coupled coil according to claim 1 is characterized in that, described interior winding and outer winding are planar structure.
4, inductance-coupled coil according to claim 1 is characterized in that, at least one is a stereochemical structure in described interior winding and the outer winding.
5, according to each described inductance-coupled coil of claim 1 to 4, it is characterized in that, described in winding and outer winding parallel with one another or be connected in series.
6, inductance-coupled coil according to claim 5 is characterized in that, connects by flexibly connecting sheet between described interior winding and the outer winding.
7, a kind of application rights requires the inductance coupled plasma device of 1 to 6 described inductance-coupled coil, comprise reative cell, reative cell top is provided with dielectric window, it is characterized in that, the top of described dielectric window is provided with described inductance-coupled coil, and the interior winding of described inductance-coupled coil and the relative position between the outer winding can be regulated.
8, inductance coupled plasma device according to claim 7, it is characterized in that, winding and outer winding are separately fixed on interior winding support and the outer winding support in described, winding support and outer winding support are arranged on reative cell top in described, and the relative position between at least one support and the reative cell can be regulated.
9, inductance coupled plasma device according to claim 8 is characterized in that, is fixed with tooth bar on the described outer winding support, and the wall of described reative cell is provided with gear, described wheel and rack engagement.
10, according to claim 7,8 or 9 described inductance coupled plasma devices, it is characterized in that, winding and outer winding are connected in parallel in described, and be connected with adaptation respectively, described adaptation is the dual output adaptation, but each output of described dual output adaptation is connected with the variable capacitance of manual adjustments respectively.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710118653XA CN101345114B (en) | 2007-07-11 | 2007-07-11 | Inductance coupling coil and inductance coupling plasma apparatus using the same |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200710118653XA CN101345114B (en) | 2007-07-11 | 2007-07-11 | Inductance coupling coil and inductance coupling plasma apparatus using the same |
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| CN101345114A true CN101345114A (en) | 2009-01-14 |
| CN101345114B CN101345114B (en) | 2011-09-14 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103906338A (en) * | 2012-12-31 | 2014-07-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma device |
| CN107783072A (en) * | 2017-11-13 | 2018-03-09 | 广西电网有限责任公司电力科学研究院 | A kind of flexible winding deformation analogue means |
| TWI709360B (en) * | 2018-03-20 | 2020-11-01 | 日商日新電機股份有限公司 | Plasma control system and plasma control system program |
| CN114599142A (en) * | 2022-03-07 | 2022-06-07 | 盛吉盛(宁波)半导体科技有限公司 | Plasma conditioning device, plasma conditioning method, plasma generating device, and semiconductor processing device |
| CN114836737A (en) * | 2021-02-01 | 2022-08-02 | 江苏菲沃泰纳米科技股份有限公司 | Inductively coupled plasma coating device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6237526B1 (en) * | 1999-03-26 | 2001-05-29 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma |
| US7096819B2 (en) * | 2001-03-30 | 2006-08-29 | Lam Research Corporation | Inductive plasma processor having coil with plural windings and method of controlling plasma density |
| JP3969081B2 (en) * | 2001-12-14 | 2007-08-29 | 東京エレクトロン株式会社 | Plasma processing equipment |
| KR100486712B1 (en) * | 2002-09-04 | 2005-05-03 | 삼성전자주식회사 | Inductively coupled plasma generating apparatus with double layer coil antenna |
| CN100527294C (en) * | 2005-02-25 | 2009-08-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupled coil and inductance coupled plasma device |
-
2007
- 2007-07-11 CN CN200710118653XA patent/CN101345114B/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103906338A (en) * | 2012-12-31 | 2014-07-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma device |
| CN103906338B (en) * | 2012-12-31 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of plasma device |
| CN107783072A (en) * | 2017-11-13 | 2018-03-09 | 广西电网有限责任公司电力科学研究院 | A kind of flexible winding deformation analogue means |
| TWI709360B (en) * | 2018-03-20 | 2020-11-01 | 日商日新電機股份有限公司 | Plasma control system and plasma control system program |
| CN114836737A (en) * | 2021-02-01 | 2022-08-02 | 江苏菲沃泰纳米科技股份有限公司 | Inductively coupled plasma coating device |
| CN114599142A (en) * | 2022-03-07 | 2022-06-07 | 盛吉盛(宁波)半导体科技有限公司 | Plasma conditioning device, plasma conditioning method, plasma generating device, and semiconductor processing device |
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| Publication number | Publication date |
|---|---|
| CN101345114B (en) | 2011-09-14 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |