CN104060238A - Liner Assembly And Substrate Processing Apparatus Having Same - Google Patents

Liner Assembly And Substrate Processing Apparatus Having Same Download PDF

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Publication number
CN104060238A
CN104060238A CN201410108752.XA CN201410108752A CN104060238A CN 104060238 A CN104060238 A CN 104060238A CN 201410108752 A CN201410108752 A CN 201410108752A CN 104060238 A CN104060238 A CN 104060238A
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China
Prior art keywords
plasma
spray header
substrate
chamber
main body
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Granted
Application number
CN201410108752.XA
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Chinese (zh)
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CN104060238B (en
Inventor
徐映水
韩泳琪
李埈爀
辛宇植
明鲁善
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Charm Engineering Co Ltd
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Charm Engineering Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Provided are a liner assembly and a substrate processing apparatus including the liner assembly. The liner assembly includes a side liner, an intermediate liner, and a lower liner. The side liner has a cylindrical shape with upper and lower portions opened. The intermediate liner is disposed under the side liner and has a plurality of first holes passing therethrough in a vertical direction. The lower liner is disposed under the intermediate liner. Here, the plurality of first holes are formed in different sizes and numbers in a plurality of regions.

Description

Pad set component and the substrate-treating apparatus with pad set component
Technical field
The present invention relates to a kind of substrate-treating apparatus, relate in particular to a kind of pad set component of process uniformity and substrate-treating apparatus that comprises described pad set component of can improving.
Background technology
Generally speaking, carry out semiconductor technology to manufacture semiconductor device, display unit, photodiode or thin-film solar cells.That is to say, form a certain stacked structure by carrying out repeatedly following technique: the thin film deposition processes by the thin film deposition of certain material on substrate, use sense luminescent material makes the optical technology of institute's constituency exposure of these films, and carries out the etch process of patterning by removing film from institute constituency.
Can use chemical vapour deposition (Chemical Vapor PhaseDeposition, CVD) method to thin film deposition processes.In CVD method, the unstripped gas being fed in reaction chamber causes chemical reaction on the upper surface of substrate, makes film growth.And, just make pattern miniaturization and highly integrated technology in research and development, because semiconductor device trends towards miniaturization.For this point, can use and activate unstripped gas to form plasma enhanced CVD (PlasmaEnhanced CVD, the PECVD) method of plasma body.
General PECVD equipment comprises: the inside has the chamber in a certain space; Be placed in the shower nozzle at the upper inner place of chamber; Be placed in the lower inside place of chamber and the substrate supports thing of support substrates; And be placed in chamber interior or outside plasma generation source, for example electrode or antenna.Here, plasma generation source can be divided into capacitance coupling plasma (CapacitiveCoupled Plasma, the CCP) type that uses electrode and the inductively coupled plasma type that uses antenna.
While using this PEVCD equipment deposit film, most important thing can be counted as stable and uniform plasma generation source and the uniform air-flow of chamber interior.But, the plasma body producing in capacitance coupling plasma equipment has advantage, be that ion energy is higher because of the cause of electric field, but the limitation of existence, because substrate and be formed on film on substrate and can suffer the destruction of high energy ion, and along with pattern becomes small, the destructiveness of high energy ion can be very serious.And inductively coupled plasma equipment has limitation, although because the ion density of the plasma body forming in chamber is uniformly in the central area of chamber, in the time keeping to the side gradually district, the homogeneity of ion density reduces.Along with the size of substrate and chamber becomes large, this difference between ion density seems more obvious.
And due to the imbalance in the pumping path of discharge side chamber interior, the air-flow of reaction chamber inside becomes inhomogeneous, and thereby technique is produced to many limitations, the deposition uniformity of for example film reduces and the generation of particle.For instance, because equipped axostylus axostyle on the centre portions of the downside of chamber, thus must form venting port in the bottom of chamber portion of external, and thereby form the district at venting port place and the evacuation time in other district differs from one another.Therefore, the stop time length of the gas on substrate dissimilates, thereby has reduced the deposition uniformity of film.Specifically, in the time using about 20 millitorrs or less low pressure process, the raw material being incorporated in reaction chamber reduces, thereby makes to be difficult to improve the deposition uniformity that uses gas.
In order to solve this limitation, attempted many methods, and most representative method is the method for the method of manifold being installed and forming at least one venting port on the side surface of chamber.But, because equipped an axostylus axostyle on the centre portions of the bottom of chamber, so exhaust equipment is mounted on the side surface of chamber.And, even turbo-pump is being installed to carry out low pressure process in the situation that, because equipped axostylus axostyle on the centre portions of the downside of chamber, so must equip turbo-pump on the side surface of chamber.In the time equipping exhaust equipment on the side surface at chamber, keep equably aspect even having limitation in the internal pressure that makes chamber.And in the time that several assemblies are inserted in chamber, the homogeneity of plasma body may be affected.
Simultaneously, 1997-0003557 Korea S publication has disclosed a kind of capacitance coupling plasma equipment, comprise upper reactor electrode and be positioned at the bottom reactor electrodes on the downside of upper reactor electrode, and Korean Patent has disclosed a kind of inductively coupled plasma equipment for No. 10-0963519, comprise in the top part that is arranged in chamber and by source gas and be incorporated into the gas sprinkling part of chamber, the antenna that obtains power supply and stationary substrate and obtain the electrostatic chuck that substrate bias power is supplied.
Summary of the invention
The invention provides a kind of substrate-treating apparatus, can prevent that substrate or the film being deposited on substrate are damaged.
The present invention also provides a kind of substrate-treating apparatus, can improve the homogeneity that is deposited on the film on substrate.
According to an example embodiment, a kind of pad set component comprises: side liner, have cylinder form, and top part and bottom part is opened wide; Interface, is placed in liner below, described side, and in having in the vertical direction, passes multiple the first holes wherein; And lower pad, being placed in described interface below, wherein said multiple the first holes are formed as different size and number in multiple districts.
Described pad set component can be included in the upper liner on the liner of described side.
Described lower pad and described interface can have respectively the opening of the size less than the diameter of the side liner at its centre portions place.
Described pad set component can comprise the projection that projects upwards and contact described interface from the inner side of lower pad.Here, described projection the inside can be formed with multiple the second holes.
In the time of past other district contrary with it of Cong Yige district, the size in described the first hole or number can increase.
According to another example embodiment, a kind of substrate-treating apparatus comprises: chamber, possesses reaction compartment and the venting port at its downside surface; Substrate supports thing, is placed in chamber in order to support substrates; Gas supply subassembly, for being fed to described chamber by processing gas; Plasma generation unit, for generation of the plasma body of described processing gas; And pad set component, being placed in described chamber, wherein said pad set component comprises: side liner, described side liner has cylinder form, and top part and bottom part are opened wide; Interface, is placed in liner below, described side, and in having in the vertical direction, passes multiple the first holes wherein; And lower pad, be placed in described interface below, and described multiple the first hole is formed as different size and number in multiple districts.
Described gas supply subassembly can comprise: the first spray header; The second spray header, comprises and is placed in described the first spray header below while and isolated the first main body of described the first spray header, and has the second main body of multiple the first spray holes and the second spray hole; Pipe connecting, in the vertical direction middle extension to be connected between described the first main body and described the second spray hole.
Described plasma generation unit can comprise power feeding unit, applies power at least one in described the first spray header, described the first main body and described the second main body.
Described power feeding unit can be formed between described the first spray header and described the second main body for generation of the district of the first plasma body and the district for generation of the second plasma body between described the first main body and described the second main body, and can apply power, so that the one in described the first plasma body and the second plasma body is had compared with high ion energy and density, and another one wherein has lower ion energy and density.
Described gas sprays subassembly side or outside can comprise spray header therein, and described spray header is supplied with power for generation of plasma body to form the first plasma slab.
Described substrate-treating apparatus can further comprise: plasma generating tube, and the longitudinal direction along described chamber in described chamber interior extends, and through described spray header; And antenna, be positioned to the external peripheral surface that surrounds described plasma generating tube, and be supplied with power for generation of plasma body.
Described spray header can comprise: the first spray header that is supplied with power, with be placed in described the first spray header below the second spray header of and ground connection spaced apart with described the first spray header simultaneously, and the first plasma slab can be the district between described the first spray header and described the second spray header.
Described substrate-treating apparatus can further comprise: exhaust unit, is connected to described venting port, and is placed on the Outboard Sections of described chamber to exhaust is carried out in the inside of described chamber; And filter unit, be placed between described plasma generation unit and described substrate supports unit, to block a part for the plasma body of described processing gas.
Described lower pad and described interface can have opening, and the diameter of described opening is less than the diameter of the side liner of central part office, and receive the axostylus axostyle for supporting described substrate supports thing respectively.
Described substrate-treating apparatus can further comprise the projection that projects upwards and contact described interface from the inner side of described lower pad, and wherein said projection the inside is formed with multiple the second holes.
Brief description of the drawings
The following description of carrying out in conjunction with the drawings can be understood example embodiment in more detail, wherein:
Fig. 1 is that graphic extension is according to the cross-sectional view of the first substrate-treating apparatus to the 3rd embodiment to Fig. 3.
Fig. 4 is that graphic extension is according to the cross-sectional view of the 4th substrate-treating apparatus to the 6th embodiment to Fig. 6.
Fig. 7 is that graphic extension is according to the cross-sectional view of the substrate-treating apparatus of the 7th embodiment.
Fig. 8 is that graphic extension is according to the schematic diagram of the pad set component of an embodiment to Figure 10.
Figure 11 (a) and (b) be the view of the thin film deposition of graphic extension substrate-treating apparatus.
Figure 12 and Figure 13 are graphic extensions according to the 8th and the cross-sectional view of the substrate-treating apparatus of the 9th embodiment.
Embodiment
Hereinafter will describe specific embodiment in detail referring to accompanying drawing.But the present invention can use multi-form enforcement, and should not be construed as limited to embodiment described in this paper.But it will be thorough and complete in order to make the present invention that these embodiment are provided, and these embodiment will intactly convey to those skilled in the art scope of the present invention.
Fig. 1 be graphic extension according to the cross-sectional view of the substrate-treating apparatus of the first embodiment, and Fig. 2 and Fig. 3 are graphic extensions according to second and the cross-sectional view of the substrate-treating apparatus of the 3rd embodiment.
Referring to Fig. 1, can comprise according to the substrate-treating apparatus of the first embodiment: chamber 100, has the internal space for the treatment of substrate S; Substrate supports unit 200, is placed in chamber 100 inside, in order to substrate S is fixedly fastened on it; And gas sprinkling subassembly 600, be placed in above the substrate supports unit 200 of chamber 100 inside, in order to spray unstripped gas.Here, gas sprinkling subassembly 600 can comprise: the first spray header 300, is placed in above the substrate supports unit 200 of chamber 100 inside; The second spray header 400, is included in the first main body 410 and the second main body 420 that the first spray header 300 belows are spaced apart from each other in vertical direction and spray unstripped gas; The first gas feedthroughs 510, to the inside of the first spray header 300 or the downside gas that supplies raw material; The second gas feedthroughs 520, is fed to unstripped gas in the gap between the first main body 410 and the second main body 420; And the first power feeding unit 460, apply power to the second main body 420.And the unstripped gas of supplying through the first gas feedthroughs 510 and the second gas feedthroughs 520 can be same to each other or different to each other.And unstripped gas can be the deposition gases for deposit film in substrate S, or it can be the etching gas for etch substrate S or film.
Fig. 1 is that graphic extension is according to the cross-sectional view of the first substrate-treating apparatus to the 3rd embodiment to Fig. 3.
Chamber 100 can be used the hexahedral shape manufacture of hollow, and the inside can have a certain internal space.The shape of chamber 100 can be not limited to hexahedral shape, but can manufacture the various shape corresponding to the shape of substrate S.Although not shown, but can load hole (not shown) at one of a side place equipment of chamber 100, for loading and unloading substrate S, and can provide one for controlling the pressure control unit (not shown) of internal pressure of chamber 100, and one for carrying out the exhaust unit (not shown) of exhaust to the inside of chamber 100.This chamber 100 can ground connection.According in the substrate-treating apparatus of this embodiment, because chamber 100 ground connection, so for example RF power equipower is applied to the second spray header 400, and the first spray header 300 ground connection, chamber 100, the second spray header 400 and the first spray header 300 can be insulated from each other.Thereby the first insulating element 110a can be arranged on the upper wall of the first spray header 300 tops, and the second insulating element 110b can be arranged on the inner side-wall of chamber 100, to surround the top of the first spray header 300.And the 3rd insulating element 110c can be arranged on the inner side-wall between the first spray header 300 and the first main body 410 and the second main body 420 belows.Here, can use and (for example comprise insulating material, pottery or pyrex glass) plate manufacture the first insulating element 110a to the three insulating element 110c, or the material that can comprise pottery or pyrex glass by coating uses the form of film to manufacture the first insulating element 110a to the three insulating element 110c.
Substrate supports unit 200 can be placed in the second spray header 400 belows in chamber 100, and can comprise: substrate supports thing 210, above substrate S is placed in; And axostylus axostyle 220, one end is connected to substrate supports thing 210, and the other end is outstanding from the bottom part of chamber 100, thus be connected to the second power feeding unit 230.Substrate supports thing 210 can be to use pull of vacuum unit or the use electrostatic force electrostatic chuck of support substrates S regularly of support substrates S regularly.(but being not limited to this), can be by the unit of plurality of classes that can support substrates S as substrate supports thing 210.And, although not shown, can in substrate supports thing 210, install and be used for the well heater (not shown) of heated substrate S and the cooling pipeline (not shown) for cooling substrate 210 or substrate S.Although not shown, the other end of axostylus axostyle 220 can be connected to driver element (not shown), described driver element vertically moves or rotary shaft 220 or substrate supports thing 210.
The first spray header 300 can be placed in the first insulating element 110a below, and the first insulating element 110a is in the top wall being installed in chamber 100.Can manufacture by plate shape according to the first spray header 300 of described embodiment, and can be included in the coconnected multiple holes of vertical direction.The top part of the first spray header 300 can be connected to the first gas feedthroughs 510, the first gas feedthroughs 510 gas that supplies raw material.Thereby the unstripped gas of supplying from the first gas feedthroughs 510 can be spread to the district between the first insulating element 110a and the first spray header 300, and multiple hole 300a that can then be passed in the first spray header 300 equipment are sprayed to downside.The first spray header 300 can ground connection.For this point, at least one end of the first spray header 300 can contact the inwall of the chamber 100 of ground connection, or can be regardless of chamber 100 independent grounding.
The second spray header 400 can comprise: the first main body 410, be placed in the first spray header 300 belows, and simultaneously spaced apart with the first spray header 300; The second main body 420, is placed in the first main body 410 belows, and has multiple the first spray hole 440a and multiple the second spray hole 440b that spray unstripped gas; Multiple pipe connectings 430, through the first main body 410 and the second main body 420 and sprinkling unstripped gas; And cooling unit 450, be placed in the first main body, in order to cooling the first main body 410.Here, between the first main body 410 and the second main body 420, not settling described multiple pipe connecting 430 district can be empty space, and empty space between the first main body 410 and the second main body 420 can be communicated with described multiple first spray hole 440a of equipment in the second main body 420.And at least one end of the second gas feedthroughs 520 can be inserted into chamber 100 simultaneously through the sidewall of chamber 100, thereby between the first main body 410 of the second spray header 400 and the second main body 420, supply raw material gas.(but being not limited to this), the second gas feedthroughs 520 can extend to downside from the upside of chamber 100, thus the space place of one end of permission the second gas feedthroughs 520 between the first main body 410 and second main body 420 of the second spray header 400.
The first main body 410 can be placed in the first spray header 300 belows, simultaneously spaced apart with the first spray header 300, and can be connected to the first power feeding unit 460, the first power feeding units 460 and apply for example RF power equipower and produce plasma body.For this point, at least one end of the first power feeding unit 460 can penetrate chamber 100 and have the 3rd insulating element 110c that is connected to the first main body 440.And, in the time that power is supplied to the first main body 410, may in the first main body 410, produce unnecessary heat.Therefore, cooling unit 450 can be inserted in the first main body 410.Cooling unit 450 can comprise a conduit, and such as the heat-eliminating medium such as water or nitrogen flows in this root conduit.
The second main body 420 can be placed in the first main body 410 belows, simultaneously spaced apart with the first main body 410, and at least one end of the second main body 420 can contact the inner side-wall of the chamber 100 of ground connection, or can be regardless of chamber 100 independent grounding.Can in the second main body 420, equip multiple the first spray hole 440a and multiple the second spray hole 440b.The top part of the first spray hole 440a and the second spray hole 440b and bottom part are opened wide respectively, and the first spray hole 440a and the second spray hole 440b can each interval turn up the soil and be placed in the second main body 420.That is to say, described multiple the first spray hole 440a can be positioned at, or the first spray hole 440a can be between described multiple the second spray hole 440b.In other words, the first spray hole 440a and the second spray hole 440b can alternately be placed in the second main body 420.Here, described multiple the first spray hole 440a can be runners, and the plasma body producing between the first main body 410 and the second main body 420 is sprayed to the downside of the second main body 420 through this runner.And described multiple the second spray hole 440a can be spaces, pipe connecting 430 described below is inserted in this space.
Pipe connecting 430 can manufacture catheter shape, top part and bottom part are opened wide and are had an internal space, and pipe connecting 430 can be inserted in the first main body 410 and the second main body 420, to penetrate in vertical direction the first main body 410 and the second main body 420.That is to say, pipe connecting 430 can penetrate the first main body 410, and its one end can be inserted in the second spray hole 440b of equipment in the second main body 420.Thereby pipe connecting 430 can become between described multiple the first spray hole 440b in the second main body 420.Pipe connecting 430 can be a runner, and the plasma body producing between the first spray header 300 and the first main body 410 moves to the downside of the second main body 420 through this runner.And, being positioned at the first main body 410Chu district and can being formed as the diameter that diameter is less than below the first main body 410 and is inserted into the second spray hole 440b Zhong district of the second main body 420 of pipe connecting 430.Preferably, pipe connecting 430 below the first main body 410 and the diameter that is inserted into the second spray hole 440b Zhong district of the second main body 420 can be equal to each other, below the first main body 410 and the diameter that is inserted into the second spray hole 440b Zhong district can be formed as being less than the diameter that is positioned at the first main body 410Zhong district.For instance, pipe connecting 430 can be manufactured with the cross section of T shape.(but being not limited to this), pipe connecting 430 can manufacture has the various shape being connected between the first main body 410 and the second main body 420, and has an internal space, and unstripped gas flows in this internal space.And, pipe connecting 430 can use the plate manufacture that comprises the such as insulating material such as pottery or pyrex glass, or the material that can comprise pottery or pyrex glass by coating manufactures the form of film, so that insulation between the first main body 410 and the second main body 420.The internal diameter of pipe connecting 430 and in the second main body 420 size of the first spray hole 440a of equipment can be equal to or greater than about 0.01 inch.This is in order to prevent producing electric arc in the time that the second spray header 400 applies power, and suppresses the generation of parasitic plasma.
Hereinafter, by be described in detail between the first spray header 300 and the second spray header 400 and the first main body 410 and second main body 420 of the second spray header 400 between space in produce the technique of plasma body.
In the time supplying raw material gas via the first spray header 300 from the first gas feedthroughs 510, can spray unstripped gas to the downside of the first spray header 300 through multiple hole 300a.In this case, in the time supplying RF power and the first spray header 300 ground connection by the first power feeding unit 460 to the first main body 410 of the second spray header 400, due to the discharge of the unstripped gas in the space between the first spray header 300 and the first main body 410, can produce the first plasma body.Hereinafter, between the first spray header 300 and the second spray header 400, preferably the space between the first spray header 300 and the first main body 410 will be known as " the first plasma slab P1 ", and the plasma body producing in the first plasma slab P1 will be known as the first plasma body.Because by its middle and upper part part (the first plasma slab P1 is, the first spray header 300) (ground connection and RF power be applied to bottom part, the first main body 410) organization definition, so the density of the first plasma body producing in the first plasma slab P1 and ion energy may be higher.Here, the first plasma body can be reactive ion deposition (the Reactive Ion Deposition producing in the time that top partial earthing and bottom part are applied in RF power, RID) type plasma body, and density and ion energy may be higher, and Qiao Ceng district is wider.The first plasma body producing in the first plasma slab P1 can move to through pipe connecting 430 downside of the second spray header 400.Hereinafter, the downside of the second spray header 400 (, the district between the second main body 420 and substrate supports thing 210) will be known as " reaction zone R ".Here, the first plasma body has the characteristic of high-density and high ion energy.
And, when (unstripped gas be fed to the second spray header 400 from the second gas feedthroughs 520, gap between the first main body 410 and the second main body 420) time, unstripped gas can be spread in the space between the first main body 410 and the second main body 420.In this case, in the time supplying RF power and the second main body 420 ground connection by the first power feeding unit 460 to the first main body 410 of the second spray header 400, can in the space between the first main body 410 and the second main body 420, produce the second plasma body.Here, the second plasma body can be plasma enhanced CVD (the P1asma EnhancedCVD producing in the time that RF power is applied to its top part and its underpart partial earthing, PE-CVD) type plasma body, and possibility plasma density is lower, and also Qiao Ceng district is wider.And processing speed may be higher.
Hereinafter, the space between the first main body 410 and second main body 420 of the second spray header 400 will be known as " the second plasma slab P2 ", and the plasma body producing in the second plasma slab P2 will be known as the second plasma body.Because by its middle and lower part part (the second plasma slab P2 is, the second main body 420) (ground connection and RF power be applied to top part, the first main body 410) organization definition, so the density of the second plasma body producing in the second plasma slab P2 may be relatively low compared with the first plasma body with ion energy.After this multiple the first spray hole 440a that the second plasma body, producing in the second plasma slab P2 can be passed in equipment in the second main body 420 move to reaction zone R.
Thereby, because spray unstripped gas through the first spray header 300 and the second spray header 400 respectively, so can spray unstripped gas by shared mode of time.And, because applying power and apply power to the second spray header 400 to the first spray header 300 is independent control, so the plasma body producing in the second plasma slab P2 of the first plasma slab P1 between the first spray header 300 and the second spray header 400 and the second spray header 400 inside can independently be controlled.Therefore, can obtain the film with good step fraction of coverage.
In this case, because substrate bias power is to be applied to by the second power feeding unit 230 the substrate supports thing 210 of above laying substrate S, so the ion of the first and second plasma bodys that move to reaction zone R may incide on the surface of substrate S or with described surface collision, be etched in thus the film settled in substrate S or deposit film in substrate S.As mentioned above, the first plasma body producing in the first plasma slab P1 has the characteristic of high-density and high ion energy, and the density of the second plasma body producing in the second plasma slab P2 may be lower compared with the first plasma body with ion energy.Thereby in the time using the first plasma body as correlation technique, substrate S or the film forming in substrate S may damage.On the other hand, in the time only using the second plasma body, processing speed may be slower.But, the same with embodiment, in the time thering is the first plasma body of high-density and ion energy and produce with compare second plasma body with low density and ion energy with the first plasma body together with, can prevent that by the interaction of the first plasma body and the second plasma body substrate S or film are damaged, and can improve processing speed.
As shown in fig. 1, having described the first spray header 300 is to be placed in the first insulating element 110a below, simultaneously spaced apart with the first insulating element 110a, and in the first spray header 300, has equipped multiple hole 300a.But (being not limited to this) is the same with the second embodiment shown in Fig. 2, the first spray header 300 can be placed in below to contact the bottom part of the first insulating element 110a, and can not equip multiple hole 300a.In this case, the first gas feedthroughs 510 can be sprayed unstripped gas to the downside of the first spray header 300.
And as shown in Figures 1 and 2, the first main body 410 of the second spray header 400 can be connected to the first power feeding unit 460, and can supply RF power to the first main body 410, and the first spray header 300 and the second main body 420 ground connection.(but being not limited to this), the same with the 3rd embodiment shown in Fig. 3, the first main body 410 of the second spray header 400 can ground connection, and can be connected to for applying the 3rd power feeding unit 310 of for example RF power the first spray header 300 being placed in the first main body 410.And the 4th power feeding unit 470 can be connected to the second main body 420 of the first main body 410 belows.Thereby, because (the first plasma slab P1 has its middle and upper part part, the first spray header 300) be supplied power and bottom part (, the first main body 410) structure of ground connection, so the density of the first plasma body producing in the first plasma slab P1 and ion energy are lower than the second plasma body.And, because having its middle and upper part part (the first main body) ground connection and bottom part (the second main body 420), the second plasma slab P2 is supplied the structure of power, so the density of the second plasma body producing and ion energy are than the first plasma height producing in the first plasma slab P1 in the second plasma slab P2.In this case, as shown in Figure 3, cooling unit 300b can be inserted in the first spray header 300, so that cooling the first spray header 300.
Hereinafter, will describe according to the operation of the substrate-treating apparatus of the first embodiment and Method of processing a substrate referring to Fig. 1.
First, substrate S can be loaded onto in chamber 100, and can be placed on substrate supports thing 210.Substrate S can be wafer (but being not limited to this), and can comprise the substrate S of glass substrate, polymer substrate, plastic, metal substrate and other plurality of classes.
In the time that substrate S is placed on substrate supports thing 310, can be by the first gas feedthroughs 510 to the upside of the first spray header 300 gas that supplies raw material, and the gas that can supply raw material between the first main body 410 of the second spray header 400 and the second main body 420 by the second gas feedthroughs 520.Unstripped gas can comprise SiH 4, TEOS, O 2, Ar, He, NH 3, N 2o, N 2with one of CaHb, but be not limited to this, can comprise the unstripped gas of plurality of classes.In this embodiment, the etching gas that is placed in the film on substrate for etching can be used as unstripped gas.
Supply RF power by the first power feeding unit 460 to the first main body 410 of the second spray header 400, and the second main body 420 of the first spray header 300 and the second spray header 400 can be distinguished ground connection.Thereby the unstripped gas of supplying from the first gas feedthroughs 510 can be sprayed onto by multiple hole 300a of equipment the first spray header 300 downside of the first spray header 300, i.e. the first plasma slab P1.After this, can in the first plasma slab P1, produce first plasma body with high-density and ion energy with the first main body 410 that is supplied RF power by the first spray header 300 of ground connection.The first plasma body producing in the first plasma slab P1 can move to reaction zone R by pipe connecting 430.Here, because pipe connecting 430 extends to the inside of the second main body 420 that is placed in the first main body 410 belows as mentioned above from the inside of the first main body 410, so can the first plasma body producing be sprayed onto to reaction zone R equably by pipe connecting 430 in the first plasma slab P1, be uniform thereby make the density of the first plasma body in the R of reaction zone.
And, the unstripped gas providing from the second gas feedthroughs 520 can the district between the first main body 410 of the second spray header 400 and the second main body 420 (, on whole the second plasma slab P2) spread equably.After this, can be by being supplied the first main body 410 of RF power and the second main body 420 of ground connection produces the second plasma body in the second plasma slab P2.The second plasma body producing in the second plasma slab P2 can move to reaction zone R by multiple the first spray hole 440a, and can be by multiple the first spray hole 440a diffusion equably on whole reaction zone R.
Due to the interaction between the first plasma body and the second plasma body, move to the first plasma body of reaction zone R and the characteristic such as such as density and ion energy etc. of the second plasma body may change.That is to say, may reduce compared with when the density that moves to the first plasma body of reaction zone R is in the first plasma slab P1 with ion energy and the first plasma body, this is because the deviation effect of the second plasma body running in the R of reaction zone causes.And, may increase compared with when the density that moves to the second plasma body of reaction zone R is in the second plasma slab P2 with ion energy and the second plasma body, this is because the first plasma body running in the R of reaction zone causes.
After this, the first plasma ion of reaction zone R and the second plasma ion may incide in the substrate S that is supplied substrate bias power or with it and bump, and are etched in thus the film forming in substrate S.Although not shown, the mask (not shown) that possesses multiple openings can be placed in substrate S, the ion of the first plasma body and the second plasma body can incide in substrate S by multiple openings of mask (not shown), thereby is etched in the film forming in substrate S.In this embodiment, because have the plasma body of high-density and ion energy uses together with having the plasma body of low density and ion energy, instead of as in correlation technique, only use the plasma body with high-density and ion energy with one that has in the plasma body of low density and ion energy, so can prevent that film or substrate S are subject to the damage of the ion that is guided to substrate S, and can shorten the treatment time.
Up to the present, for example understand according to the substrate-treating apparatus of the first embodiment of Fig. 1, but according to the substrate-treating apparatus of the second embodiment of Fig. 2 be similar to operation and the plasma generation process of the substrate-treating apparatus of the first embodiment according to the operation of the substrate-treating apparatus of the 3rd embodiment of Fig. 3 and plasma generation process.But, in the second embodiment of Fig. 2, can spray the unstripped gas of supplying from the first gas feedthroughs 230 to the downside of the first spray header 300.And in the 3rd embodiment of Fig. 3, the second main body 420 of the first spray header 300 and the second spray header 400 can ground connection, and the first main body 410 of the second spray header 400 can be connected to power feeding unit 470.Thereby, can between the first spray header 300 and the first main body 410, produce the first plasma body, and can between the first main body 410 and the second main body 420, produce the second plasma body.In this case, compared with the first plasma body, the density of the second plasma body and ion energy may be relatively high.Thereby compared with the first plasma body producing between the first spray header 300 and the first main body 410, density and the ion energy of the second plasma body producing between the first main body 410 and the second main body 420 may be relatively high.
Fig. 4 be graphic extension according to the cross-sectional view of the substrate-treating apparatus of the 4th embodiment, and Fig. 5 and Fig. 6 are graphic extensions according to the 5th and the cross-sectional view of the substrate-treating apparatus of the 6th embodiment.
Referring to Fig. 4, can comprise according to the substrate-treating apparatus of the 4th embodiment: chamber 100, has the internal space for the treatment of substrate S; Substrate supports unit 200, is placed in chamber 100 inside, in order to substrate S is fixedly fastened on it; The first spray header 300 and the second spray header 400, be placed on the substrate supports unit 200 of chamber 100 inside in order to spray unstripped gas, and spaced apart perpendicular to each other; Plasma generating tube 710, penetrates arrangement the first spray header 300 and the second spray header 400 in vertical direction, and produces therein plasma body; Antenna 720, reels around the external peripheral surface of plasma generating tube 710; And multiple magnetic fields generation unit 800, be placed at least one in inside and outside of chamber 100.And substrate-treating apparatus can further comprise: the first raw material supply line 510, its one end is connected to the first spray header 300 with the gas that supplies raw material to the first spray header 300; The second raw material supply line 520, its one end is connected to plasma generating tube 710 with the gas that supplies raw material to plasma generating tube 720; The first power feeding unit 330, for applying power to the first spray header 300; The second power feeding unit 730, for applying power to antenna 720; And the 3rd power feeding unit 230, for supplying substrate bias power to substrate supports unit 200.Here,, according to the type of the film forming in substrate S and etching type, the unstripped gas that is fed to the first spray header 300 and plasma generating tube 710 can be same to each other or different to each other.For instance, in order to form oxide compound (SiO in substrate S 2) film, can supply O to the first spray header 300 2or N 2o gas, and can be by SiH to form plasma body 4or TEOS gas inject in plasma generating tube 710 to form plasma body.In etched situation, can supply XF series (NF to the first spray header 300 and plasma generating tube 710 3, F 2, C 3f 8and SF 6) and O 2.And, can supply for example He, aR and N to the first spray header 300 and plasma generating tube 710 2deng rare gas element.The example of etching gas can comprise NF 3, F 2, BCl 3, CH 4, Cl 2, CF 4, CHF 3, CH 2f 2, C 2f 6, C 3f 8, C 4f 8, C 5f 8and C 4f 6.Be not limited to this, can use SiH 4, TEOS, O 2, NH 4, N 2o and CaHb (hydrocarbon) form film, and can use for example He, Ar and N 2deng rare gas element as assist gas in case transmit raw material and produce plasma body.
Chamber 100 can manufacture the hexahedral shape of hollow, and the inside can have a certain internal space.This chamber 100 can ground connection.In this embodiment, because the first spray header 300 and the second spray header 400, plasma generating tube 710 and multiple magnetic generation unit 800 are placed in the upside of chamber 100, so be necessary insulation between the first spray header 300 and the second spray header 400, plasma generating tube 710 and multiple magnetic generation unit 800.Therefore, the first insulating element 110 can be arranged on the inner side-wall of chamber 100, on this inner side-wall, settling the first spray header 300 and the second spray header 400, plasma generating tube 710 and multiple magnetic generation unit 800, and the second insulating element 110b can be arranged in the top wall of chamber 100.And the 3rd insulating element 110c can be arranged on the upper surface of the first spray header 300.
Substrate supports unit 200 can be placed in the second spray header 400 belows in chamber 100, and can comprise: substrate supports thing 210, above substrate S is placed in; And axostylus axostyle 220, one end is connected to substrate supports thing 210, and the other end is outstanding from the bottom part of chamber 100, thus be connected to the 3rd power feeding unit 230.
The first spray header 300 can extend on substrate supports unit 200 on the width of chamber 100, and can spray unstripped gas by multiple the first spray hole 300a.And the first spray header 300 can be connected to for the first raw material supply line 510 of the gas that supplies raw material and apply power to produce the first power feeding unit 320 of plasma body.The second spray header 400 can the first spray header 300 and substrate supports thing 210 in chamber 100 between, and can settle so that ground connection along the bearing of trend of the first spray header 300.And, can in the second spray header 400, equip multiple the second spray hole 400a.The second spray hole 400 can be located in the first spray header 300 equipment the first spray hole 300a under.The first spray hole 300a and the second spray hole 400a can communicate with each other, and be directed in the second spray hole 400a making through the unstripped gas of the first spray hole 300a.Be not limited to this, the first spray hole 300a and the second spray hole 400a also can be positioned to each other and replace.Here, the size of the first spray hole 300a and the second spray hole 400a can be equal to or greater than respectively about 0.01 inch.This is in the time applying power to the first spray header 300, in the first spray header 300 and the second spray header 400, electric arc to occur in order to prevent, and suppresses the generation of parasitic plasma.
Hereinafter, the technique of plasma body will be produced in the space being described between the first spray header 300 and the second spray header 400.
In the time supplying raw material gas from the first gas feedthroughs 510 to the first spray header 300, can spray unstripped gas to the space between the first spray header 300 and the second spray header 400 by multiple the first hole 300a.In this case, in the time that the first power feeding unit 320 is supplied RF power and the second spray header 400 ground connection to the first spray header 300, due to the discharge of the unstripped gas in the space between the first spray header 300 and the second spray header 400, can produce plasma body, preferably capacitance coupling plasma (Capacitive Coupled Plasma, CCP).Hereinafter, the space between the first spray header 300 and the second spray header 400 will be known as " the first plasma slab P1 ".The plasma gas producing in the first plasma slab P1 can move to by multiple second spray hole 400a of the second spray header 400 downside of the second spray header 400.In this case, because substrate bias power is applied to the substrate supports thing 210 of laying substrate S above, so the positively charged ion of the plasma body in the scope between the second spray header 400 and substrate S can incide on the surface of substrate S or bump with it, etch substrate S or the film settled in substrate S thus.Here, because a certain low DC power is applied to substrate supports thing 210, so may not produce the independent plasma body causing due to the second spray header 400 and substrate supports thing 210.Hereinafter, the district between the second spray header 400 and substrate S will be known as " reaction zone R ".Thereby in the time that the resonance plasma body producing from plasma generating tube 710 described below arrives substrate S, the CCP producing in the first plasma slab P1 can reduce by compensation density.That is to say, the density of resonance plasma body producing in plasma generating tube 710 tends to along with away from becoming from antenna 720 and reduce.The density of the resonance plasma body therefore, producing from plasma generating tube 710 may reduce in the time arriving substrate S.Thereby, in this embodiment, can produce in addition the reduction of CCP with the phsyical density of compensation resonance plasma body.And ion energy and the translational speed of the resonance plasma body producing in plasma generating tube 710 may be higher.Thereby in the time only using resonance plasma body, substrate S or the film forming in substrate S may damage.But, the same with described embodiment, when produce together the CCP compared with the plasma body that resonates with low density and ion energy in plasma slab P1 time, can prevent that by the interaction of resonance plasma body and CCP substrate S or film from being damaged.
Plasma generating tube 710 can manufacture the catheter shape with internal space, and antenna 720 can be reeled around its external peripheral surface.Plasma generating tube 710 can extend on the longitudinal direction of chamber 100, and can penetrate in vertical direction the first spray header 300 and the second spray header 400.That is to say, plasma generating tube 710 can extend to from the upside of the first spray header 300 the bottom part of the second spray header 400, and the bottom part of plasma generating tube 710 can be not outstanding from the bottom part of the second spray header 400.In this embodiment, can equip multiple plasma generating tubes 710, and the arrangement that can be spaced apart from each other of these plasma generating tubes 710.Plasma generating tube 710 can use the manufacture of the insulating material such as such as pyrex glass and pottery.For instance, can use pyrex glass and pottery that plasma generating tube 710 is manufactured to insulating vessel.Antenna 720 can be reeled around the external peripheral surface of plasma generating tube 710 (, insulating vessel), and its one end can be connected to the second power feeding unit 730.Can be formed by copper (Cu) according to the antenna 720 of described embodiment, and can reel around the external peripheral surface helically of plasma generating tube 710.But, the shape of antenna 720 is not limited to above-mentioned spiral-shaped, but can comprise for example Nagoya (Nagoya) type, half Nagoya (half-Nagoya) type, both legs (double-leg) type, double half turn (double half-turn) type, Persian Wei Er (Boswell) (two saddle) type, hedge (Shoji) type and homophase (phased) type.In the time that excitation frequency wavelength is λ, antenna 720 can have the length of the integral multiple of λ/2.This is the generation in order to reduce transient plasma in the time applying RF power, method be by respectively around multiple plasma generating tube 710 coiling antennas 720, and thereby the impedance of mating rapidly multiple antennas 720.
Hereinafter, the inner technique that produces plasma body of plasma generating tube 710 will be described in.
In the time can supplying raw material from the second raw material supply line 520 to plasma generating tube 710 gas and apply RF power by the second power feeding unit to antenna 720, because unstripped gas is discharged, can in plasma generating tube 710, produce plasma body.Hereinafter, the inside of plasma generating tube 710 will be known as " the second plasma slab P2 ".In this case, because antenna 720 is reeled around plasma generating tube 710 helically, and the length of antenna 720 is integral multiples of λ/2, and in the narrow space of plasma generating tube 710 inside, carry out reaction, so can produce and there is highdensity resonance plasma body in the second plasma slab P2.Due to the substrate bias power being applied on substrate supports thing 210, so the positively charged ion of the resonance plasma body producing in the second plasma slab P2 can incide on the surface of the substrate S of laying on substrate supports thing 210 or bump with it.Thereby, can in substrate S, form film, or can etch substrate S or the film that forms in substrate S.
Thereby the resonance plasma body producing in the second plasma slab P2 can have highdensity characteristic, and can have the effect of improving processing speed, because higher towards ion energy and the plasma density of substrate S.But in the time that resonance plasma body arrives substrate S, density can reduce.In this case, the CCP producing in the first plasma slab P1 can compensation density reduction.The overall consistency that therefore, can prevent the plasma body reacting with substrate S reduces.And ion energy and the translational speed of the resonance plasma body producing in plasma generating tube 710 may be higher.Thereby in the time only using resonance plasma body, substrate S or the film forming in substrate S may damage.But, the same with described embodiment, when produce together the CCP compared with the plasma body that resonates with low density and ion energy in plasma slab P1 time, can prevent that by the interaction of resonance plasma body and CCP substrate S or film from being damaged.
It is inside and outside that magnetic field generation unit 800 can be placed in chamber 100, to produce magnetic field, so that the plasma body producing in the first plasma slab P1 and the second plasma slab P2 can be spread equably.Magnetic field generation unit 800 can be placed at least one in chamber 100 inside and outside.The magnetic field generation unit 800 that is placed in chamber 100 inside can be located on the 3rd insulating element 110c installing on the first spray header 300.That is to say, the magnetic field generation unit 800 that is placed in chamber 100 inside can be arranged between the second insulating element 110b installing on the upper wall of chamber 100 inside and the 3rd insulating element 110c installing in the top part of the first spray header 300.And, magnetic field generation unit 800 arrangement that can be spaced apart from each other between multiple plasma generating tubes 710.The magnetic field generation unit 800 that is placed in chamber 100 outsides can surround chamber 100, and can be placed in upside and the downside of chamber 100.The position that is placed in the magnetic field generation unit 800 of chamber 100 outsides can change.Magnetic field generation unit 800 can be formed by solenoid.Here, magnetic field generation unit 800 can manufacture coil form.The magnetic field generation unit 800 that is placed in chamber 100 inside can surround plasma generating tube 710, and the magnetic field generation unit 800 that is placed in chamber 100 outsides can surround chamber 100.In the time that power is applied to magnetic field generation unit 800, can be in the outside and inner magnetic field that produces of chamber 100.Magnetic field can allow the plasma body producing in the first plasma slab P1 and the second plasma slab P2 to spread equably.For instance, in the time that magnetic field generation unit 800 is not installed, plasma density may be higher in the second plasma generating tube 710 inside, and may be lower in the R of the reaction zone of the downside corresponding to the second spray header 400.Therefore, it is outside and inner to form magnetic field that magnetic field generation unit 800 can be arranged on chamber 100, and the plasma body of induction resonance is thus carried out motion of translation according to the magnetic flux in magnetic field.Thereby the resonance plasma body of plasma generating tube 710 inside can move to outside, so that diffusion equably on whole reaction zone R.
Plasma generating tube 710 extends to the second spray header 400 bottom part from the upside of the first spray header 300 has been described.But, be not limited to this, the same with the 5th embodiment of Fig. 5, plasma generating tube 710 can extend to from the upside of the first spray header 300 the bottom part of the first spray header 300.That is to say, plasma generating tube 710 can be positioned to the not bottom part from the first spray header 300 and give prominence to.And the same with the 6th embodiment of Fig. 6, although the second spray header 400 is not mounted in the first spray header 300 belows, plasma generating tube 710 can extend to from the upside of the first spray header 300 the bottom part of the first spray header 300.
And Fig. 4 describes in Fig. 6, magnetic field generation unit 800 is placed on chamber 100 inside and outside.But, be not limited to this, at Fig. 4, in the 4th to the 6th embodiment of Fig. 6, magnetic field generation unit 800 also can be placed in the one in chamber 100 inside and outside.
Hereinafter, will describe according to the operation of the substrate-treating apparatus of the 4th embodiment and Method of processing a substrate referring to Fig. 4.
First, substrate S can be loaded onto in chamber 100, and can be placed on the substrate supports thing 210 being placed in chamber 100.In the time that substrate S is placed on substrate supports thing 310, unstripped gas can be fed to the first spray header 300 by the first gas feedthroughs 510, and can use the first power feeding unit 320 that RF power is applied to the first spray header 300.In this case, the second spray header 400 can ground connection.And substrate bias power can be applied to substrate supports thing 210, and power can be applied to the multiple magnetic fields generation unit 800 that is placed in chamber interior and outside to produce magnetic field.Thereby unstripped gas can be sprayed onto described space (i.e. the first plasma slab P1 between the first spray header 300 and the second spray header 400) by multiple first hole 300a of the first spray header 300.Because be applied to the RF power ground connection of the first spray header 300 and the second spray header 400, so can produce CCP in the first plasma slab P1.After this, the CCP producing in the first plasma slab P1 can move to by multiple second spray hole 400a of the second spray header 400 downside of the second spray header 400, that is, and and reaction zone R.
Unstripped gas can be fed to the first spray header 300 by the first raw material supply line 510, and RF power can be applied to the first spray header 300.In this case, unstripped gas can be fed to plasma generating tube 710 by the second raw material supply line 520, and can use the second power feeding unit 730 RF power to be applied to the antenna 720 of reeling around plasma generating tube 710.Thereby, can in (, the second plasma slab P2), produce resonance plasma body in the inside of plasma generating tube 710.In this case, the resonance plasma body producing in the inside of plasma generating tube 710 (, the second plasma slab P2) can move to reaction zone R, and the magnetic flux in the magnetic field simultaneously producing by magnetic field generation unit 800 is carried out motion of translation.Therefore the resonance plasma body, producing in the second plasma slab P2 can diffusion equably on whole reaction zone R.
Thereby the plasma body producing in the first plasma slab P1 and the second plasma slab P2 can form film in substrate S, or can etch substrate S or film.That is to say, the positively charged ion of the plasma body producing in the first plasma slab P1 and the second plasma slab P2 can incide in the substrate S that is supplied substrate bias power or with it and bump, and forms thus film or etch substrate S or film in substrate S.
Meanwhile, in the time of resonance plasma body moving substrate S, the density of the resonance plasma body producing in the second plasma slab P2 may reduce.In this case, the CCP producing in the first plasma slab P1 can compensation density reduction.Therefore, can prevent processing speed due to resonance plasma density reduction reduce, and compared with correlation technique the substrate processing time can shorten.And ion energy and the plasma density of the resonance plasma body producing in plasma generating tube 710 may be higher.Thereby in the time only using resonance plasma body, substrate S or the film forming in substrate S may damage.But, the same with described embodiment, when produce together the CCP compared with the plasma body that resonates with low density and ion energy in plasma slab P1 time, can prevent that by the interaction of resonance plasma body and CCP substrate S or film from being damaged.Therefore, can form the film with good film quality.
Fig. 7 is that graphic extension is according to the cross-sectional view of the substrate-treating apparatus of the 7th embodiment.And Fig. 8 is graphic extension for according to the decomposition diagram of the pad set component of the substrate-treating apparatus of embodiment.Fig. 9 is the skeleton view of subassembly, and Figure 10 is the orthographic plan of interface.
Referring to Fig. 7, can comprise according to the substrate-treating apparatus of the 7th embodiment: chamber 100, is equipped with a certain reaction compartment; Substrate supports unit 200, is placed in the bottom part of chamber 100 with support substrates S; Spray header 310, for being sprayed onto chamber 100 by processing gas; Gas feedthroughs 510, for supply department's body of regulating the flow of vital energy; Exhaust unit 900, is placed in chamber 100 outsides with the exhaust gas inside from chamber 100; And pad set component 1000, be equipped in chamber 100 inside with the inner side-wall of protection chamber 100 and allow the air-flow in chamber 100 to become evenly.
Chamber 100 can comprise a certain reaction zone, and can maintain resistance to air loss.Chamber 100 can comprise: reactive moieties 100a, comprises substantially circular planar section and the sidewall sections extending from planar section upward; And cover plate 100b, be placed in reactive moieties 100a upper with sealed chamber 100 airtightly and there is substantially circular shape.Venting port 120 for example can be formed on, in the side surface of chamber 100 (, below substrate supports thing 210), and venting port 120 can be connected to the exhaust unit 900 that comprises vent line and exhaust equipment.
Substrate supports unit 200 can be equipped in chamber 100 inside, and can be placed in the position contrary with spray header 300.That is to say, spray header 300 can be equipped in the upside of the inside of chamber 100, and substrate supports unit 200 can be equipped in the downside of the inside of chamber 100.
Spray header 310 can be sprayed onto the such as processing such as deposition gases and etching gas gas in chamber 100, and power feeding unit 320 can apply high frequency power to spray header 310.Spray header 310 can be placed in the position of the top part contrary with substrate supports thing 210 of chamber 100, and can spray and process gas to the downside of chamber 100.Spray header 310 the insides can have a certain space.Spray header 310 can be connected thereto the processing gas supply line 510 of side, and can be formed on the downside of spray header 310 for spray multiple spray holes 312 of processing gas to substrate S.And spray header 310 can further possess distribution plate 314, for distributing equably the processing gas of supplying from gas feedthroughs 510.Distribution plate 314 can approach gas inflow part (process gas and be introduced in this gas inflow part) and be connected to and process gas supply line 510, and can have a certain plate shape.That is to say, distribution plate 314 can with the spaced apart a certain gap of the uper side surface of spray header 310.And distribution plate 314 the insides can possess multiple through holes.Due to the effect of distribution plate 314, the processing gas of supplying from processing gas supply line 510 can be uniformly distributed in spray header 310, and thereby can be sprayed onto equably downside by the spray hole of spray header 310 312.And spray header 310 can use the electro-conductive materials such as such as aluminium to manufacture, and can with the sidewall of chamber 100 and the spaced apart a certain gap of cover plate 100b.Can between the sidewall 100a of spray header 310 and chamber 100 and cover plate 100b, equip isolator 330, to spray header 310 and chamber 100 are insulated.Because spray header 310 use electro-conductive materials are manufactured, thus can supply high frequency power to spray header 310 from power feeding unit 320, with the upper electrode as plasma generation unit.Power feeding unit 320 can be connected to spray header 310 by the sidewall of chamber 100 and isolator 340, and can supply high frequency power to produce plasma body to spray header 310.Power feeding unit 320 can comprise high frequency electric source (not shown) and matching box (not shown).For instance, high frequency electric source can produce the high frequency power of about 13.56MHz, and matching box can detection chambers 100 impedance, to produce the imaginary number component (with the single spin-echo of the imaginary number component of impedance) of impedance, thus peak power is fed in chamber 100, to make impedance identical with the pure resistance of real component, and thereby produce optimum plasma body.On the other hand, because high frequency power is applied to spray header 310, so chamber 100 can ground connection, thereby produce the plasma body of processing gas in chamber 100.
Process gas supply line 510 and can supply multiple processing gas, for instance, etching gas and thin film deposition gas.Etching gas can comprise NH 3and NF 3, and thin film deposition gas can comprise SiH 4and PH 3.And, except etching gas and thin film deposition gas, can also supply for example H 2with rare gas elementes such as Ar.And, can process gas supply source and process valve and the mass flow controller of between gas feed line, equipping the supply for controlling processing gas.
Exhaust unit 900 can be connected to the venting port 120 forming at part place, the bottom of the side surface of chamber 100.Exhaust unit 900 can comprise the exhaust guide 910 that are connected to venting port 120, and for the inside of chamber 100 being carried out by exhaust guide 910 gas barrier 920 of exhaust.In this case, gas barrier 920 can comprise for example turbomolecular pump equal vacuum pump, and thereby can be configured to the inner vacuum of chamber 100 to aspirate into about 0.1 millitorr or less a certain pressure (, a certain reduced atmosphere).Meanwhile, also can be at the part place, bottom being penetrated by axostylus axostyle 220 of chamber 100 equipment exhaust unit 900.Because exhaust unit 900 is to equip at the downside of chamber 100, also can discharge by the downside of chamber 100 so process a part for gas.
If Fig. 8 is to as shown in Figure 10, pad set component 1000 can comprise there is the side liner 1100 of cylinder form substantially, in the upper liner 1200 of the upside equipment of side liner 1100, at the lower pad 1300 of the downside equipment of side liner 1100 and the interface 1400 of equipping between lower pad 1200 and upper liner 1300.
Side liner 1100 can manufacture top part and the unlimited cylinder form substantially of bottom part.Side liner 1100 can be arranged on the damage of avoiding processing gas or plasma body in the reaction chamber of substrate-treating apparatus with the inner surface of protective reaction chamber.Side liner 1100 can manufacture portion's part from it and have same diameter to bottom part.Side liner 1100 can manufacture along with approaching its underpart part has small diameter, that is to say, side liner 1100 can be downward-sloping towards inside.When side liner 1100 manufactures when downward-sloping towards inside, reactant gases or plasma flow can be guided to around the substrate supports thing of the downside equipment of the inside of reaction chamber, and because exhaust gas region reduces, so can realize high speed exhaust.In addition, when side liner manufactures when downward-sloping towards inside, can reduce with the contact area of the inner surface of reaction chamber, and thereby can prevent side liner 1100 by plasma heating during to high temperature polymer deposition on the wall surface of side liner 1100.Meanwhile, side liner 1100 can manufacture the diameter that internal diameter is greater than substrate supports thing.That is to say, in the time that side liner 1100 has perpendicular shape or even downward-sloping shape, the minimum diameter of side liner 1100 can be greater than the diameter of substrate supports thing.This is at side liner 1100 internal equipments because of substrate supports thing, and mobile in the vertical direction.Can at least one district of side liner 1100, form jack 1120, in order to receive the measuring apparatus of measuring stress etc. use.Jack 1120 is formed at least Liang Ge district in same straight line in can be in the vertical direction.And jack 1100 can be formed in a horizontal direction and face with each other in Liang Ge district.That is to say, be inserted into a measuring apparatus in jack 1120 and can be inserted in other jack 1120.Jack 1120 can have identical or different size.For instance, two jacks 1120 have same size in can being formed as in the vertical direction, and have different size in a horizontal direction.
Upper liner 1200 can manufacture the shape of annular substantially, and can be coupled to the top part of side liner 1100.That is to say, upper liner 1200 can have the opening that heart part place forms therein, and can comprise and there is a certain width to surround the circular slab of described opening, the size of this circular slab measure-alike with the opening of the top part of side liner 1100 substantially.Upper liner 1200 therein heart part place has an opening, the centre portions of the reaction compartment in reaction chamber is opened wide, thereby allow reactant gases or plasma body to concentrate on the centre portions of reaction chamber.That is to say, side liner 1100 can with the spaced apart a certain gap of the inner side-wall of reaction chamber, and the outside surface of upper liner 1200 can contact reacts chamber inner side-wall, between side liner 1100 and the inner side-wall of reaction chamber, be separated out thus a space, and be separated out a space in side liner 1100 inside.And upper liner 1200 can have a projection 1220, outstanding downwards from bottom inner surface, and width is identical with side liner 1100.That is to say, projection 1220 can contact the upper surface of side liner 1100 regularly, thereby allows upper liner 1200 to be fixed on side liner 1100.And the bottom inner surface of upper liner 1200 can contact side liner 1100 regularly, instead of form projection 1220.Meanwhile, in the time that side liner 1100 adheres on the inwall of chamber completely, may not need upper liner 1200, and side liner 1100 and upper liner 1200 can form.
Lower pad 1300 can manufacture heart part place therein and have the shape of the circular slab substantially of an opening, and can be coupled to regularly the bottom part of side liner 1100.Here, the diameter of the opening of lower pad 1300 can be less than the opening of upper liner 1200.That is to say, the diameter dimension of the opening of upper liner 1200 can be identical with the internal diameter of side liner 1100, and the diameter of the opening of lower pad 1300 can be less than the internal diameter of side liner 1100.This is because the processing gas spraying from spray header by the opening of upper liner 1200 is allowed to be incorporated into the space of side liner 1100 inside, and the axostylus axostyle of substrate supports thing inserts by the opening of lower pad 1300.And the diameter of lower pad 1300 can be greater than the diameter of side liner 1100, for instance, the diameter of lower pad 1300 can be identical with the internal diameter of reaction chamber.That is to say, side liner 1100 can with the spaced apart a certain gap of the inner side-wall of reaction chamber, and the inner side-wall that lower pad 1300 can contact reacts chamber.And, the lower surface that at least a portion of the lower surface of lower pad 1300 can contact reacts chamber.And lower pad 1300 can have projection 1320, project upwards a certain height from its inner side.Projection 1320 the insides can be formed with multiple holes 1340.Described multiple hole 1340 can have same size and shape in whole district.But described multiple holes 1340 can have different size and shape for each district.For instance, the place of venting port Yi Ge district that described multiple holes 1340 can form on the side surface approaching at reaction chamber is formed as reduced size, and can be formed as large-size away from place of venting port Yi Ge district.And the height of projection 1320 can be adjusted according to the distance between lower pad 1300 and interface 1400, and preferably can be identical with venting port.
Can between upper liner 1200 and lower pad 1300, equip interface 1400.Preferably, the gap between lower pad 1300 and interface 1400 can be at least measure-alike with venting port.Interface 1400 therein heart part place has an opening, and the size of this opening is identical with the opening of lower pad 1300.This is because be to locate by the opening of interface 1400 and lower pad 1300 for the axostylus axostyle 220 of support substrates upholder 210.Interface 1400 can manufacture heart part place therein and have the circular plate shape substantially of an opening.The opening of interface 1400 can be identical with the opening of lower pad 1300 and circular slab with the size of circular slab.Therefore the inner side-wall that, the outside surface of interface 1400 can contact reacts chamber.And the lower surface of side liner 1100 can contact a certain district of the upper surface of interface 1400.Interface 1400 the insides can be formed with multiple holes 1420.Except described multiple holes 1420, can also form the through hole of various shape, for example shape of slit.That is to say, because the processing gas of the upside of interface 1400 need to flow to the downside of interface 1400, so can form multiple holes 1420 in interface 1400.Here, described multiple hole 1420 can have different size and number for each district.For instance, size and number that the approaching hole 1420 that is connected to the venting port on exhaust equipment forms can be less, and the size and the number that form away from the hole 1420 of venting port can be larger.In other words,, in the time that the size in hole 1420 in whole district equates, the number in the hole 1420 in each district can be different.On the other hand, in the time that the number in hole 1420 in whole district equates, the size in the hole 1420 in each district can be different.That is to say, the exhaust pressure and the speed that approach the district of venting port can be greater than exhaust pressure and the speed away from the district of venting port, but pass through size and the number in the hole of adjusting interface 1400, and the exhaust pressure in whole district and speed can be identical.
Meanwhile, pad set component 1000 can be used pottery or for example aluminium or stainless steel and other metal materials manufacture.Pad set component 1000 metallic substance manufacture, can be coated with and be covered with for example Y 2o 3and Al 2o 3on pottery.
As mentioned above, comprise according to the substrate-treating apparatus of the pad set component 1000 of described embodiment and can carry out exhaust, method is by equip lower pad 1300 and interface 1400 below substrate supports thing 210, and forms venting port 120 on the side surface of chamber 100 betwixt.Interface 1400 can have the hole 1420 of different size and number.The size in hole 1420 and number can be along with increasing away from venting port 120, thereby allow the gas of the upside of interface 1400 to flow to the downside of interface 1400 by the hole 1420 of interface 1400, are then discharged from.Therefore, the air-flow of chamber 100 inside can be used as entirety and is controlled equably, method is the output by reduce gas with respect to the quick flow that more approaches venting port 120 district, and with respect to the output that increases gas away from the slow air-flow in venting port 120 district.Thereby, the deposition uniformity of the film in substrate S can be improved, and the generation of particle can be suppressed.That is to say, when the use shown in the correlation technique that does not use interface shown in comparison diagram 11A and Figure 11 B when interface of the present invention, can find out, deposition uniformity of the present invention improves compared with correlation technique.Because the air-flow of chamber 100 inside is uniformly, rest on time length in all districts in substrate S and can become and be equal to each other so process gas, improve thus the deposition uniformity of film.And, do not increase because process time length of resting in Yi Ge district of gas, so can suppress the generation of particle.
Figure 12 be graphic extension comprise ground plate 340 according to the cross-sectional view of the substrate-treating apparatus of the 8th embodiment.Ground plate 340 can with the spaced apart a certain gap of spray header 310, and can be connected to the side surface of chamber 100.Chamber 100 can be connected to ground terminal, and thereby ground plate 340 also can maintain ground potential.Meanwhile, the gap between spray header 310 and ground plate 340 can become the reaction compartment for the processing gas spraying by spray header 310 being excited into plasmoid.That is to say, in the time can being supplied high frequency power by spray header 310 sprinkling processing gases and spray header, ground plate 340 can maintain ground state, and therebetween can appearance potential poor, in reaction compartment, processing gas is excited into plasmoid thus.In this case, the gap between spray header 310 and ground plate 340 (, the vertical gap of reaction compartment) can maintain wherein minimum clearance that can activated plasma.For instance, described gap can maintain about 3mm or larger size.The processing gas exciting in reaction compartment need to be sprayed onto in substrate S.For this point, a certain plate shape in multiple holes 342 that ground plate 340 penetrates in can manufacturing and having in the vertical direction.Thereby, can prevent that the plasma body producing from directly contacting substrate S in reaction compartment, and thereby can reduce the infringement that plasma body causes substrate S.And ground plate 340 can be in order to reduce electronic temp by limit plasma body in reaction compartment.
Figure 13 be graphic extension according to the cross-sectional view of the substrate-treating apparatus of the 9th embodiment, comprise the filter unit 950 between substrate supports unit 200 and spray header 310.Filter unit 950 can be equipped between ground plate 340 and substrate supports unit 200, and the side surface of filter unit 950 can be connected to the sidewall of chamber 100.Therefore, filter unit 950 can maintain ground potential.Filter unit 950 can filter the ion of the plasma body producing in plasma generation unit, electronics and light.That is to say, in the time that the plasma body producing in plasma generation unit passes strainer, can block ion, electronics and light, thereby only allow reactive material and substrate S to react.Filter unit 950 can allow plasma body and filter unit 950 that primary collision at least occurs, and is then applied to substrate S.Thereby, in the time that the filter unit 950 of plasma body and ground potential bumps, can absorb and there is high-octane ion and electronics.And, when the light of plasma body and filter unit 950 bump, can not see through filter unit 950.Filter unit 950 can be prepared into various shape.For instance, the single plate that filter unit 950 can use the inside to be formed with multiple holes 952 forms, or can in multilayer, settle the inside to form porose plate, and the hole 952 of each plate can be formed as misalignment each other.Or filter unit 950 can be formed as multiple holes 952 wherein and have the plate shape of a certain refraction path.
According to an embodiment, in the first plasma slab of the inside corresponding to electrod assembly or outside, produce the first plasma body, and produce the second plasma body in the second plasma slab (being exactly the inside of the second spray header).Here, ion energy and the density of the one in the first plasma body and the second plasma body are higher, and the ion energy of another one and density lower in contrast.Therefore, there is the first plasma body and second plasma body of different ions energy and density because use, thus substrate processing speed can be improved compared with correlation technique, and can reduce the damage of substrate or film.
According to another embodiment, because use the resonance plasma body with high ion energy and density, so substrate processing speed can improve compared with correlation technique.Meanwhile, when resonance plasma body is during at moving substrate, the density of resonance plasma body can reduce.In this case, there is capacitance coupling plasma (the Capacitive Coupled Plasma of low ion energy and plasma density compared with resonance plasma body, CCP) form the reduction of the density of the plasma body of compensation resonance thus together.And, can prevent that substrate and film are damaged, method is the ion energy that is resonated that plasma body and CCP and control incide in substrate or bumped with substrate by formation.
According to another embodiment, below substrate supports thing, equip lower pad and interface, and form venting port on the side surface of reaction chamber betwixt, to reaction chamber is carried out to exhaust.Interface has the hole of different size or number.In the district further from venting port, form the more hole of large size and number.Therefore,, although it is very fast to approach air-flow in the district of venting port, allow the output of gas to reduce.On the other hand, although slower away from the air-flow in the district of venting port, allow the output of gas to increase.Thereby air-flow can be controlled as a whole in reaction chamber.Because can allow air-flow is uniformly in reaction chamber, thus the deposition uniformity of the film on substrate can be improved, and can suppress the generation of particle.
Although the substrate-treating apparatus of having described pad set component and having comprised pad set component referring to specific embodiment, pad set component and substrate-treating apparatus are not limited to this.Therefore, those skilled in the art will readily appreciate that, in the case of not departing from the spirit and scope of the present invention that define by appended claims, can carry out various modifications and variations.

Claims (15)

1. a pad set component, is characterized in that, comprising:
Side liner, has cylinder form, and top part and bottom part are opened wide;
Interface, is placed in liner below, described side, and in having in the vertical direction, passes multiple the first holes wherein; And
Lower pad, is placed in described interface below,
Wherein said multiple the first hole is formed as different size and number in multiple districts.
2. pad set component according to claim 1, is further included in the upper liner on the liner of described side.
3. pad set component according to claim 1, wherein said lower pad and described interface have respectively than the little opening of size of the diameter of the described side liner at heart part place therein.
4. pad set component according to claim 3, comprises the projection that projects upwards and contact described interface from the inner side of described lower pad, and wherein said projection the inside is formed with multiple the second holes.
5. pad set component according to claim 3, wherein, in the time of past other district contrary with it of Cong Yige district, the size in described the first hole or number increase.
6. a substrate-treating apparatus, is characterized in that, comprising:
Chamber, possesses reaction compartment and the venting port at its downside surface;
Substrate supports thing, is placed in chamber in order to support substrates;
Gas supply subassembly, for being fed to described chamber by processing gas;
Plasma generation unit, for generation of the plasma body of described processing gas; And
Pad set component, is placed in described chamber,
Wherein said pad set component comprises: side liner, have cylinder form, and top part and bottom part is opened wide; Interface, is placed in liner below, described side, and in having in the vertical direction, passes multiple the first holes wherein; And lower pad, be placed in described interface below, and described multiple the first hole is formed as different size and number in multiple districts.
7. substrate-treating apparatus according to claim 6, wherein said gas supply subassembly comprises:
The first spray header;
The second spray header, comprises and is placed in described the first spray header below while and isolated the first main body of described the first spray header, and has the second main body of multiple the first spray holes and the second spray hole;
Pipe connecting, in the vertical direction middle extension to be connected between described the first main body and described the second spray hole.
8. substrate-treating apparatus according to claim 7, wherein said plasma generation unit comprises the power feeding unit that applies power to described the first spray header, described the first main body and described the second main body.
9. substrate-treating apparatus according to claim 8, wherein said power feeding unit be formed between described the first spray header and described the second main body for generation of the district of the first plasma body and the district for generation of the second plasma body between described the first main body and described the second main body, and apply power, so that the one in described the first plasma body and the second plasma body is had compared with high ion energy and density, and another one wherein has lower ion energy and density.
10. substrate-treating apparatus according to claim 6, wherein said gas sprays subassembly and side or outside comprises spray header therein, described spray header be supplied with power for generation of plasma body to form the first plasma slab.
11. substrate-treating apparatus according to claim 10, further comprise:
Plasma generating tube, extends and through described spray header along the longitudinal direction of described chamber in described chamber interior; And
Antenna, is positioned to and surrounds the external peripheral surface of described plasma generating tube and be supplied with power for generation of plasma body.
12. substrate-treating apparatus according to claim 11, wherein said spray header comprises the first spray header that is supplied with power, with be placed in described the first spray header below the second spray header of and ground connection spaced apart with described the first spray header simultaneously, and described the first plasma slab is Yi Ge district between described the first spray header and described the second spray header.
13. substrate-treating apparatus according to claim 6, further comprise:
Exhaust unit, is connected to described venting port and is placed on the Outboard Sections of described chamber, to make the exhaust gas inside of described chamber; And
Filter unit, is placed between described plasma generation unit and described substrate supports unit, to block a part for the described plasma body of described processing gas.
14. substrate-treating apparatus according to claim 6, wherein said lower pad and described interface have opening, the diameter ratio of described opening is little at the diameter of the described side of centre portions liner, and receives respectively the axostylus axostyle for supporting described substrate supports thing.
15. substrate-treating apparatus according to claim 14, further comprise the projection that projects upwards and contact described interface from the inner side of described lower pad, and wherein said projection the inside is formed with multiple the second holes.
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