CN111501020A - Semiconductor device with a plurality of semiconductor chips - Google Patents

Semiconductor device with a plurality of semiconductor chips Download PDF

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Publication number
CN111501020A
CN111501020A CN202010523683.4A CN202010523683A CN111501020A CN 111501020 A CN111501020 A CN 111501020A CN 202010523683 A CN202010523683 A CN 202010523683A CN 111501020 A CN111501020 A CN 111501020A
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China
Prior art keywords
vacuum
process chamber
flow
branches
flow regulator
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CN202010523683.4A
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Inventor
赵雷超
张文强
史小平
兰云峰
纪红
秦海丰
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to CN202010523683.4A priority Critical patent/CN111501020A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Abstract

The embodiment of the application provides a semiconductor device. The semiconductor device includes: a process chamber, a vacuum pipeline and an air extractor; the vacuum pipeline is arranged between the process chamber and the air extracting device; the vacuum pipeline comprises a plurality of vacuum branches, and the gas inlet ends of the vacuum branches are distributed on the bottom wall of the process chamber; the air outlet ends of the vacuum branches are connected with an air extracting device, and the air extracting device is used for vacuumizing the process cavity. According to the embodiment of the application, the uniformity of the airflow field in the process chamber is improved by arranging the plurality of vacuum branches, so that the uniformity of the deposited film is effectively improved.

Description

Semiconductor device with a plurality of semiconductor chips
Technical Field
The application relates to the technical field of semiconductor processing, in particular to a semiconductor device.
Background
At present, with the rapid iterative update of the integrated circuit technology, electronic components are continuously promoted to develop towards the direction of miniaturization, integration and high efficiency, which puts higher requirements on the thin film deposition technology. The existing thin film Deposition technology includes Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD), but it is increasingly difficult to meet the above requirements, and especially the limitation of three-dimensional structure is becoming more apparent, so people are turning to the atomic layer Deposition technology.
The atomic layer deposition technology is a thin film deposition technology which adsorbs a single atomic layer on a substrate layer by layer, and the biggest characteristic of the atomic layer deposition technology is self-limitation, so that the thin film prepared by the atomic layer deposition technology has the advantages of high thickness controllability, excellent uniformity, high step coverage rate and the like.
However, most of the thin films prepared by the atomic layer deposition technology have the influence of various factors such as agglomeration, nucleation, activation energy of reaction particles and the like, and the thickness of one atomic layer can not be perfectly deposited in each cycle (cycle), and is often 1/2 or 1/3 which is only one atomic layer thick, for example, trimethyl aluminum (TMA) and H are adopted2Synthesis of Al from O2O3With thin films, each cycle (cycle) can be deposited
Figure BDA0002532962240000011
Essentially Al2O3A single atomic layer of 1/3. Therefore, when a thin film is manufactured in an atomic layer deposition apparatus, uniformity of the deposited thin film may be affected by various factors such as temperature. In the existing atomic layer deposition equipment, it is difficult to form a uniformly distributed gas flow field on a substrate, thereby affecting the uniformity of a thin film.
Disclosure of Invention
The application aims at the defects of the prior art and provides the semiconductor equipment for solving the technical problem that the uniformity of a film is influenced due to the fact that an airflow field is not uniform in the prior art.
In a first aspect, an embodiment of the present application provides a semiconductor device, including: a process chamber, a vacuum pipeline and an air extractor; the vacuum pipeline is arranged between the process chamber and the air pumping device; the vacuum pipeline comprises a plurality of vacuum branches, and the gas inlet ends of the vacuum branches are distributed on the bottom wall of the process chamber; and the air outlet ends of the plurality of vacuum branches are connected with the air pumping device, and the air pumping device is used for vacuumizing the process cavity.
In an embodiment of the present application, a flow regulator is disposed on the vacuum pipeline; the semiconductor equipment further comprises a controller connected with the flow regulator, and the controller is used for controlling the opening and closing angle of the flow regulator according to the environment of the process chamber so as to control the gas flow of the vacuum pipeline.
In an embodiment of the present application, the flow regulator includes a plurality of first flow regulators, and the plurality of first flow regulators are respectively and correspondingly disposed on the plurality of vacuum branches; the controller is used for controlling the opening and closing angle of each first flow regulator according to the environment of the process chamber so as to control the gas flow of each vacuum branch.
In an embodiment of the present application, the vacuum pipeline further includes a main pipeline, and the air outlet ends of the plurality of vacuum branches are connected to the air extractor through the main pipeline; the flow regulator comprises a second flow regulator, and the second flow regulator is arranged on the main pipeline; the controller is used for controlling the opening and closing angle of the second flow regulator so as to control the air flow in the main pipeline.
In an embodiment of the present application, the process chamber environment includes a process chamber structure and a process mode, and when the process chamber structure is a symmetric structure and the process mode is a constant voltage mode and the number of the first flow regulators is greater than two, the controller is configured to control any two of the first flow regulators to have the same and fixed opening and closing angles, and set the remaining first flow regulators to be the constant voltage mode.
In an embodiment of the present application, the process chamber environment includes a process chamber structure and a process mode, and when the process chamber structure is an asymmetric structure and the process mode is a constant voltage mode and the number of the first flow regulators is greater than two, the controller is configured to control any two of the first flow regulators to have different opening and closing angles and to be fixed, and to set the remaining first flow regulators to be the constant voltage mode.
In an embodiment of the present application, the process chamber environment includes a process chamber structure, and when the process chamber structure is a symmetric structure, the controller is configured to control the opening and closing angles of the first flow regulators to be the same and fixed.
In one embodiment of the present application, the type of flow regulator comprises a butterfly valve.
In an embodiment of the present application, the number of the plurality of vacuum branches is three to five, and an inner diameter of each of the vacuum branches is 60 to 150 mm.
In an embodiment of the present application, the number of the vacuum branches is three, and an inner diameter of each vacuum branch is 80 mm.
The technical scheme provided by the embodiment of the application has the following beneficial technical effects:
according to the embodiment of the application, the uniformity of the airflow field in the process chamber is improved by arranging the plurality of vacuum branches on the bottom wall of the process chamber, so that the uniformity of a deposited film is effectively improved.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of a semiconductor device according to an embodiment of the present disclosure;
FIG. 2 is a schematic cross-sectional view of a process chamber provided in an embodiment of the present application;
FIG. 3 is a schematic view of a gas flow field of a process chamber according to an embodiment of the present disclosure.
Detailed Description
Reference will now be made in detail to the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar parts or parts having the same or similar functions throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The following describes the technical solutions of the present application and how to solve the above technical problems with specific embodiments.
An embodiment of the present application provides a semiconductor device, a schematic structural diagram of which is shown in fig. 1, including: a process chamber 100, a vacuum pipeline 1 and an air extractor 2; the vacuum pipeline 1 is arranged between the process chamber 100 and the air extractor 2; the vacuum pipeline 1 comprises a plurality of vacuum branches 11, and the air inlet ends of the plurality of vacuum branches 11 are distributed on the bottom wall of the process chamber 100; the air outlet ends of the vacuum branches 11 are connected with an air extractor 2, and the air extractor 2 is used for vacuumizing the process chamber 100.
As shown in fig. 1, the semiconductor apparatus may specifically be an atomic layer deposition apparatus, and a gas inlet pipe 200 may be disposed at a top portion of the process chamber 100, wherein the gas inlet pipe 200 is connected to the showerhead 101 in the process chamber 100 for delivering the process gas into the process chamber 100. The vacuum line 1 is disposed between the process chamber 100 and the pumping device 2, and is used for evacuating the process chamber 100. Specifically, the vacuum pipeline 1 may include three vacuum branches 11, a gas inlet end of each vacuum branch 11 is connected to the process chamber 100, and the three vacuum branches 11 are distributed on the bottom wall of the process chamber 100; the air outlet end of the vacuum branch 11 is connected to an air extractor 2, and the air extractor 2 is used for maintaining the vacuum state of the process chamber 100. The pressure state and the uniformity of the gas flow field in the process chamber 100 can be controlled by controlling the gas flow in each vacuum branch 11, so as to improve the pressure stability and the uniformity of the gas flow field in the process chamber 100, thereby improving the uniformity of the deposited film.
This application embodiment sets up a plurality of vacuum branch roads through the diapire at process chamber, then can be through the airflow in the control each vacuum branch road to realize the pressure stability and the air current field homogeneity in the adjustment process chamber, thereby effectively improve the homogeneity of deposited film.
It should be noted that, the embodiment of the present application does not limit the specific number and distribution state of the vacuum branches 11, and the specific number of the vacuum branches 11 may be adjusted according to the structure and the process mode of the process chamber 100, for example, the plurality of vacuum branches 11 may be uniformly distributed on the bottom wall of the process chamber. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings by themselves.
In an embodiment of the present application, as shown in fig. 1, a flow regulator 3 is disposed on the vacuum pipeline 1; the semiconductor apparatus further includes a controller connected to the flow regulator 3, the controller being configured to control an opening and closing angle of the flow regulator 3 according to a process chamber environment to control a gas flow rate of the vacuum line 1. Specifically, the vacuum line 1 is provided with a flow regulator 3, and the flow regulator 3 is electrically connected to a controller (not shown in the figure). The controller can control the opening and closing angle of the flow regulator 3 according to the environment of the process chamber to control the gas flow in the vacuum pipeline 1, thereby realizing the control of the pressure state in the process chamber 100 and the uniformity of the gas flow field, improving the pressure stability in the process chamber 100 and the uniformity of the gas flow field, and improving the uniformity of the deposited film.
In an embodiment of the present application, the flow regulator 3 includes a plurality of first flow regulators 31, and the plurality of first flow regulators 31 are respectively disposed on the vacuum branches 11; the controller is used for controlling the opening and closing angle of each first flow regulator 31 according to the process chamber environment so as to control the flow rate of gas in each vacuum branch 11.
As shown in fig. 1, each vacuum branch 11 is provided with a first flow regulator 31, the first flow regulator 31 is specifically a butterfly valve, and each first flow regulator 31 is connected to the controller. In practical applications, the controller controls the opening and closing angle of each first flow regulator 31, so as to control the air flow in each vacuum branch 11. By adopting the design, the structure of the embodiment of the application is simple, and the application and maintenance cost can be effectively reduced. It should be noted that the embodiment of the present application is not limited to a specific type of the first flow regulator 31, for example, other types of valves may be used, and thus the embodiment of the present application is not limited thereto. The controller specifically adopts a singlechip or a lower computer of a semiconductor device, but the embodiment of the application is not limited to this, and a person skilled in the art can adjust the setting by himself or herself according to actual situations.
In an embodiment of the present application, the vacuum pipeline 1 may further include a main pipeline 12, and the air outlet ends of the plurality of vacuum branches 11 are connected to the air extractor 2 through the main pipeline 12; the flow regulator comprises a second flow regulator, which is arranged on the main pipeline 12; the controller is used for controlling the opening and closing angle of the second flow regulator so as to control the flow rate of the gas in the main pipeline 12.
Referring to fig. 1 in combination, a main pipeline 12 is disposed between the plurality of vacuum branches 11 and the air extractor 2, a second flow regulator (not shown) is disposed on the main pipeline 12, and the second flow regulator may also be a butterfly valve, but the embodiment of the present application is not limited thereto. The controller is connected with the second flow regulator and is used for controlling the air flow in the main pipeline 12 by adjusting the opening and closing angle of the second flow regulator, so as to control the air flow in each vacuum branch 11. By adopting the design, the second flow regulator is only arranged on the main pipeline 12, and the first flow regulator 31 is not arranged on each vacuum branch 11, so that the application and maintenance cost can be effectively saved, the requirement of symmetrical and uniform distribution of the airflow field of the process chamber 100 can be met, and the problem of abnormal thickness of the deposited film is avoided.
In an embodiment of the present application, the process chamber environment includes a process chamber structure and a process mode, and when the process chamber structure is a symmetric structure and the process mode is a constant voltage mode and the number of the first flow regulators is greater than two, the controller is configured to control any two first flow regulators 31 to have the same and fixed opening and closing angles, and set the remaining first flow regulators 31 to be the constant voltage mode.
Referring to fig. 1to 2 in combination, when the process chamber structure of the embodiment of the present invention is a symmetrical structure and the process mode is the constant pressure mode and the number of the first flow regulators is greater than two, the controller can control the opening and closing angles of the first flow regulators 31 on two vacuum branches 11 to be the same and fixed, and then control the first flow regulators 31 on the other vacuum branch 11 to maintain the process chamber 100 in the constant pressure mode. Specifically, since the opening and closing angles of the two first flow regulators 31 are the same and fixed, there is a certain pumping force for controlling the flow direction of the gas in the process chamber 100; and the first flow regulator 31 on the other vacuum branch 11 is connected to a controller, which can obtain the pressure change in the process chamber 100 in real time and ensure that the process chamber 100 is maintained in a constant pressure mode by adjusting the opening and closing angle of the first flow regulator 31 in real time. By adopting the design, the pumping force of the three vacuum branches 11 can be ensured to be the same, and the process chamber 100 can be fixed at a specific pressure, so that the pressure fluctuation is effectively reduced, and the uniformity of film deposition is greatly improved. In one embodiment, for example, the process pressure is 1torr (1 torr being 133.32 pa), the total gas inflow of the process chamber 100 is 3000sccm (standard milliliter per minute), and the opening and closing angles of the three first flow regulators 31 are all set to 25 °. Then, any two first flow regulators 31 are selected to adopt a constant angle, namely, the opening and closing angle is always set to be 25 degrees; the opening and closing angle of the other first flow regulator 31 is preset to 25 °, and then a constant pressure mode is adopted under the control of the controller, and the set pressure 1torr also fluctuates at about 25 °, so that the uniformity of the gas flow field in the process chamber 100 is realized while the constant pressure mode is maintained in the process chamber 100.
In an embodiment of the present application, the process chamber environment includes a process chamber structure and a process mode, and when the process chamber structure is an asymmetric structure and the process mode is a constant voltage mode and the number of the first flow regulators 31 is greater than two, the controller is configured to control any two first flow regulators 31 to have different opening and closing angles and to be fixed, and set the remaining first flow regulators 31 to be the constant voltage mode.
Referring to fig. 1to 2 in combination, when the process chamber of the embodiment of the present invention has an asymmetric structure and the process mode is the constant pressure mode and the number of the first flow regulators is greater than two, the controller can control the opening and closing angles of the first flow regulators 31 on two vacuum branches 11 to be different, and then control the first flow regulators 31 on the other vacuum branch 11 to maintain the process chamber 100 in the constant pressure mode. Specifically, since the first flow regulators 31 on the two vacuum branches 11 can be set according to the structure of the process chamber 100, for example, when the process chamber 100 has an asymmetric structure, the uniformity of the thin film deposited in the process chamber 100 is not good, the pulling force of the vacuum branch 11 with a thin film can be increased, that is, the opening and closing angle of the first flow regulator 31 on the vacuum branch 11 is set to be relatively large, so as to achieve the purpose of improving the uniformity of the deposited thin film. By adopting the design, the control of the embodiment of the application is flexible and changeable, and the device can be suitable for a more complex process chamber structure, so that the application range is wider.
In one embodiment, for example, the process pressure is 1torr, the total gas input into the process chamber 100 is 3000sccm, and the process chamber structure is asymmetric. Referring to fig. 3, the plurality of vacuum branches 11 are respectively labeled as a first vacuum branch 111, a second vacuum branch 112 and a third vacuum branch 113 for convenience of describing the embodiment of the present application. Assuming that the chamber space near the first vacuum branch 111 > the chamber space near the second vacuum branch 112 > the chamber space near the third vacuum branch 113, the opening and closing angle of the first vacuum branch 111 > the opening and closing angle of the second vacuum branch 112 > the opening and closing angle of the third vacuum branch 113 is set, for example, the opening and closing angles of the first flow regulators 31 are set to 35 °, 25 ° and 15 ° respectively; in addition, in order to satisfy the 1torr process pressure, one of the first flow regulators 31 may be selected to use a constant pressure mode, for example, the first flow regulator 31 on the first vacuum branch 111 uses a constant pressure mode, and the first flow regulators 31 on the second vacuum branch 112 and the third vacuum branch 113 may use a constant angle mode, that is, set at 25 ° and 15 °, respectively, and the opening and closing angle may be optimized according to the thickness distribution of the deposited film on the substrate during the actual process, so that the control of the embodiment of the present application is flexible and variable, and the present application may be preferably applied to a more complex process chamber structure.
In an embodiment of the present application, the process chamber environment includes a process chamber structure, and when the process chamber structure is a symmetric structure, the controller is configured to control the opening and closing angles of the first flow regulators 31 to be the same and fixed.
In one embodiment of the present application, when the process chamber structure is a symmetrical structure, the vacuum line may not have a flow regulator such as a butterfly valve.
Referring to fig. 1to 2, when the process chamber structure of the embodiment of the present invention is a symmetrical structure, the first flow regulators 31 on the three vacuum branches 11 may be fixed at the same opening and closing angle, that is, the suction force of each vacuum branch 11 is the same. Depositing Al while running an atomic layer deposition process2O3In the case of thin film deposition, the opening and closing angles of the three first flow regulators 31 are the same, so that the suction force in each vacuum branch 11 is the same, and the uniform and symmetrical distribution of the airflow fields on the base 102 and the substrate carried thereby can be ensured, thereby greatly improving the uniformity of thin film deposition.
In one embodiment of the present application, the type of flow regulator 3 comprises a butterfly valve. The flow regulator 3 adopts the butterfly valve design, so that the application and maintenance cost of the embodiment of the application can be effectively reduced, and the embodiment of the application is more convenient to regulate.
In an embodiment of the present application, as shown in fig. 1 and 2, the number of the vacuum branches 11 is three to five, and the inner diameter of each vacuum branch 11 is 60 to 150 mm. Optionally, the number of the plurality of vacuum branches is three, and the inner diameter of each vacuum branch is 80 mm. It should be noted that, the embodiment of the present application does not limit the specific number of the vacuum branches 11, for example, the number of the vacuum branches 11 may be two, three, four, or five, and the inner diameter of the vacuum branch 11 may be set according to the number of the vacuum branches 11, for example, may be specifically 65 mm, 70 mm, 80 mm, 90 mm, 100 mm, 120 mm, or 140 mm. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to actual situations.
In one embodiment of the present application, the gas inlets of the plurality of vacuum branches 11 are disposed around the susceptor 102 in the process chamber 100, and the distances between the gas inlets of the plurality of vacuum branches 11 and the axis of the susceptor 102 are the same.
As shown in fig. 1to 2, the chamber space of the process chamber 100 is a circular structure in a top view, and the support 103 of the pedestal 102 is disposed at a middle position of the process chamber 100, i.e., the process chamber structure in the present embodiment is a symmetrical structure. The inlet ends of the three vacuum branches 11 are disposed on the bottom wall of the process chamber 100, the inlet ends of the three vacuum branches 11 are disposed around the supporting frame 103, and the inlet ends of the three vacuum branches 11 are uniformly wound around the periphery of the supporting frame 103 by using the supporting frame 103 as a circle center, i.e., the distances between the inlet ends of the vacuum branches 11 and the axis of the supporting frame 103 are the same. Referring to fig. 3, under the condition that the three vacuum branches 11 have the same pumping force, the gas flow field is distributed on the substrate substantially symmetrically, i.e. the gas flow in the process chamber 100 can uniformly flow over the susceptor 102 and the periphery, so that there is no abnormal thick spot during the film deposition process, which greatly improves the film deposition uniformity. By adopting the design, the uniformity of the gas flow field in the process chamber 100 is further improved, so that the film deposition effect is further improved.
It should be noted that the embodiment of the present invention is not only applicable to the process chamber 100 with a symmetric structure, but also applicable to the process chamber 100 with an asymmetric structure, as long as the gas inlets of the plurality of vacuum branches 11 are disposed around the support frame 103. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the embodiments according to the actual situation.
By applying the embodiment of the application, at least the following beneficial effects can be realized:
this application embodiment sets up a plurality of vacuum branch roads through the diapire at process chamber, then can be through the airflow in the control each vacuum branch road to realize the pressure stability and the air current field homogeneity in the adjustment process chamber, thereby effectively improve the homogeneity of deposited film. .
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.

Claims (10)

1. A semiconductor device, comprising: a process chamber, a vacuum pipeline and an air extractor;
the vacuum pipeline is arranged between the process chamber and the air pumping device;
the vacuum pipeline comprises a plurality of vacuum branches, and the gas inlet ends of the vacuum branches are distributed on the bottom wall of the process chamber; and the air outlet ends of the plurality of vacuum branches are connected with the air pumping device, and the air pumping device is used for vacuumizing the process cavity.
2. The semiconductor device of claim 1, wherein a flow regulator is disposed on the vacuum line;
the semiconductor equipment further comprises a controller connected with the flow regulator, and the controller is used for controlling the opening and closing angle of the flow regulator according to the environment of the process chamber so as to control the gas flow of the vacuum pipeline.
3. The semiconductor apparatus according to claim 2, wherein the flow regulator includes a plurality of first flow regulators respectively provided in correspondence with the plurality of vacuum branches;
the controller is used for controlling the opening and closing angle of each first flow regulator according to the environment of the process chamber so as to control the gas flow of each vacuum branch.
4. The semiconductor device according to claim 2, wherein the vacuum pipeline further comprises a main pipeline, and the air outlet ends of the plurality of vacuum branches are connected with the air suction device through the main pipeline;
the flow regulator comprises a second flow regulator, and the second flow regulator is arranged on the main pipeline;
the controller is used for controlling the opening and closing angle of the second flow regulator so as to control the air flow in the main pipeline.
5. The semiconductor apparatus of claim 3, wherein the process chamber environment comprises a process chamber structure and a process mode, and when the process chamber structure is a symmetric structure and the process mode is a constant voltage mode and the number of the first flow regulators is greater than two, the controller is configured to control opening and closing angles of any two of the first flow regulators to be the same and fixed, and set the remaining first flow regulators to be the constant voltage mode.
6. The semiconductor apparatus of claim 3, wherein the process chamber environment comprises a process chamber structure and a process mode, and when the process chamber structure is an asymmetric structure and the process mode is a constant voltage mode and the number of the first flow regulators is greater than two, the controller is configured to control any two of the first flow regulators to have different opening and closing angles and to be fixed, and to set the remaining first flow regulators to the constant voltage mode.
7. The semiconductor apparatus of claim 3, wherein the process chamber environment comprises a process chamber structure, and the controller is configured to control the opening and closing angles of the first flow regulators to be the same and fixed when the process chamber structure is a symmetrical structure.
8. The semiconductor device of claim 2, wherein the type of flow regulator comprises a butterfly valve.
9. The semiconductor apparatus according to any one of claims 1to 8, wherein the number of the plurality of vacuum branches is three to five, and an inner diameter of each of the vacuum branches is 60 to 150 mm.
10. The semiconductor device of claim 9, wherein the plurality of vacuum branches is three in number, and each of the vacuum branches has an inner diameter of 80 mm.
CN202010523683.4A 2020-06-10 2020-06-10 Semiconductor device with a plurality of semiconductor chips Pending CN111501020A (en)

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