CN114645265A - Vacuumizing system, semiconductor process equipment and vacuumizing method - Google Patents

Vacuumizing system, semiconductor process equipment and vacuumizing method Download PDF

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Publication number
CN114645265A
CN114645265A CN202210316224.8A CN202210316224A CN114645265A CN 114645265 A CN114645265 A CN 114645265A CN 202210316224 A CN202210316224 A CN 202210316224A CN 114645265 A CN114645265 A CN 114645265A
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Prior art keywords
valve
vacuumizing
pipeline
process chambers
vacuum
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CN202210316224.8A
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CN114645265B (en
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宋晓彬
申震
闫志顺
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to CN202210316224.8A priority Critical patent/CN114645265B/en
Publication of CN114645265A publication Critical patent/CN114645265A/en
Priority to TW112110375A priority patent/TWI847611B/en
Priority to KR1020247030407A priority patent/KR20240148408A/en
Priority to PCT/CN2023/082697 priority patent/WO2023185542A1/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)

Abstract

The application discloses a vacuum-pumping system, semiconductor process equipment and a vacuum-pumping method, and relates to the field of semiconductors. An evacuation system comprising: a plurality of groups of first vacuumizing assemblies and second vacuumizing assemblies; the multiple groups of first vacuumizing assemblies are connected with the multiple groups of process chamber groups in a one-to-one corresponding mode, each first vacuumizing assembly comprises a first vacuum pump and multiple first vacuumizing pipelines, the outlet ends of the multiple first vacuumizing pipelines are connected with the first vacuum pumps, and the inlet ends of the multiple first vacuumizing pipelines are connected with the multiple process chambers in the process chamber groups in a one-to-one corresponding mode; the second vacuumizing assembly comprises a second vacuum pump and a second vacuumizing pipeline, the outlet end of the second vacuumizing pipeline is connected with the second vacuum pump, and the inlet end of the second vacuumizing pipeline is connected with the plurality of process chambers respectively. Semiconductor processing equipment comprises an evacuating system. A vacuum pumping method is applied to semiconductor process equipment. The application at least solves the problem that the conventional equipment occupies a large area.

Description

Vacuumizing system, semiconductor process equipment and vacuumizing method
Technical Field
The application belongs to the technical field of semiconductors, and particularly relates to a vacuumizing system, semiconductor process equipment and a vacuumizing method.
Background
A horizontal Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus can excite a process gas by using a high-frequency electric field in a high-vacuum quartz chamber to decompose SiH of the process gas4、NH3Thereby depositing Si on the surface of the sample3N4A film. The PECVD equipment has relatively high automation degree and can meet the requirements of a solar cell production line. In a tubular PECVD apparatus, the evacuation system is a critical component of the apparatus.
However, the conventional tubular PECVD equipment is operated by combining a plurality of sets of equipment, each set of equipment comprises a vacuum pump, so that the problems of large occupied area, high energy consumption, high operation cost and the like of the plurality of vacuum pumps are caused.
Disclosure of Invention
An object of the embodiments of the present application is to provide a vacuum pumping system, a semiconductor processing apparatus and a vacuum pumping method, which can at least solve the problem of large occupied area caused by the fact that a tubular PECVD apparatus includes a plurality of vacuum pumps.
In order to solve the technical problem, the present application is implemented as follows:
the embodiment of the application provides a vacuum pumping system for a plurality of process chamber evacuation of semiconductor process equipment, it is a plurality of process chamber divide into multiunit process chamber group, every group process chamber group includes a plurality of process chamber, vacuum pumping system includes: a plurality of groups of first vacuum-pumping assemblies and second vacuum-pumping assemblies;
the multiple groups of first vacuumizing assemblies are used for being correspondingly connected with multiple groups of process chamber groups one by one, each first vacuumizing assembly comprises a first vacuum pump and multiple first vacuumizing pipelines, the outlet ends of the multiple first vacuumizing pipelines in each group of first vacuumizing assemblies are all connected with the first vacuum pump, and the inlet ends of the multiple first vacuumizing pipelines in each group of first vacuumizing assemblies are respectively used for being correspondingly connected with the multiple process chambers in one group of process chamber groups one by one;
the second vacuumizing assembly comprises a second vacuum pump and a second vacuumizing pipeline, the outlet end of the second vacuumizing pipeline is connected with the second vacuum pump, and the inlet end of the second vacuumizing pipeline is used for being respectively connected with the plurality of process chambers.
The embodiment of the application also provides semiconductor process equipment which comprises the vacuumizing system.
The embodiment of the application also provides a vacuum pumping method, which is applied to the semiconductor process equipment, and the method comprises the following steps:
when the process chambers in each group of process chambers are processed, starting the first vacuumizing pipeline to vacuumize the process chambers correspondingly connected with the first vacuumizing pipeline;
when one or more process chambers in each group of process chamber groups alarm abnormally in the process, and other process chambers in the same group of process chamber groups carry out processes normally, the first vacuumizing pipeline correspondingly connected with the process chambers alarming abnormally is closed, and meanwhile, the second vacuumizing pipeline is opened, so that the process chambers alarming abnormally are vacuumized.
In the embodiment of the application, a plurality of groups of process chambers can be respectively vacuumized by a plurality of groups of first vacuumizing assemblies, each group of first vacuumizing assemblies comprises a first vacuum pump and a plurality of first vacuumizing pipelines, the plurality of first vacuumizing pipelines in each group of first vacuumizing assemblies share one first vacuum pump, inlets of the plurality of first vacuumizing pipelines in each group of first vacuumizing assemblies are correspondingly connected with a plurality of process chambers in one group of process chambers one by one, so that a plurality of process chambers in each group of process chambers can be vacuumized by one first vacuum pump in each group of first vacuumizing assemblies, compared with the mode that each process chamber corresponds to one vacuum pump, the embodiment of the application can reduce the number of first vacuum pumps included in a vacuumizing system, thereby reducing the floor space occupied by the plurality of first vacuum pumps and improving the utilization rate of the first vacuum pumps, and further energy consumption and operation cost can be reduced.
In addition, the second vacuumizing assembly comprises a second vacuum pump and a second vacuumizing pipeline, the second vacuum pump is respectively connected with the plurality of process chambers through the second vacuumizing pipeline, so that the abnormal process chambers in each group of process chambers can be guaranteed to alarm, and when other process chambers in the same group of process chambers normally carry out processes, the abnormal process chambers can be vacuumized through the second vacuumizing pipeline and the second vacuum pump, so that the abnormal process chambers and other process chambers of the process which is entering air can be prevented from sharing a rear end pipeline, and are commonly connected with the first vacuumizing pump, so that the process environment of the process chambers of the normal process is influenced; and the second vacuum pumping pipeline and the second vacuum pump are used for vacuumizing the abnormal process chamber, so that the abnormal process chamber can be prevented from being vacuumized simultaneously after the normal process chamber finishes the process, the waiting time is reduced, the flexibility of equipment is increased, the generation efficiency is improved, and the capacity loss caused by abnormal process is reduced.
Drawings
FIG. 1 is a schematic plan view of a process chamber and a vacuum pump in a PECVD apparatus according to the related art;
FIG. 2 is a schematic view of a vacuum pumping system and connections of a plurality of process chambers according to an embodiment of the present disclosure;
FIG. 3 is a schematic view of the connection of a first evacuation assembly, a second evacuation assembly, and a process chamber disclosed in an embodiment of the present application;
FIG. 4 is a schematic plan view of each set of the first evacuation assembly, the second evacuation assembly, and their corresponding process chambers, according to an embodiment of the present disclosure;
FIG. 5 is a schematic illustration of a control valve disclosed in an embodiment of the present application in a first state;
fig. 6 is a schematic diagram of a control valve in a second state according to an embodiment of the disclosure.
Description of reference numerals:
01-quartz chamber; 02-vacuum pump;
10-a first evacuation assembly; 11-a first vacuum pump; 12-a first evacuation line; 120-a main pipeline; 121-a control valve; 1211-valve body; 12110-a through cavity; 1212-a valve plate; 122-a first on-off valve; 123-a bypass conduit; 124-a second switch valve; 125-regulating valve; 126-pressure switch; 127-a pressure sensor; 128-a pressure relief conduit; 129-third on-off valve; 130-a one-way valve;
20-a second vacuum-pumping assembly; 21-a second vacuum pump; 22-a second evacuation line; 220-common piping; 221-branch conduit; 222-a fourth switching valve;
30-process chamber.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms first, second and the like in the description and in the claims of the present application are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that embodiments of the application may be practiced in sequences other than those illustrated or described herein, and that the terms "first," "second," and the like are generally used herein in a generic sense and do not limit the number of terms, e.g., the first term can be one or more than one. In addition, "and/or" in the specification and claims means at least one of connected objects, a character "/" generally means that a preceding and succeeding related objects are in an "or" relationship.
The embodiments of the present application are described in detail below with reference to the accompanying drawings through specific embodiments and application scenarios thereof.
Referring to fig. 1, the related art provides a ten-tube solar cell production apparatus, which includes two five-tube solar cell production apparatuses, and the two five-tube solar cell production apparatuses are placed in a plant. The ten-tube solar cell production equipment comprises ten quartz chambers 01 and ten sets of vacuumizing systems, wherein each set of vacuumizing system comprises one vacuum pump 02, so that the vacuum pumps 02 correspond to the quartz chambers 01 one by one, the quartz chambers 01 corresponding to the vacuum pumps 02 are vacuumized through the vacuum pumps 02, and the vacuumizing processes of the quartz chambers 01 are mutually independent and do not influence each other.
When ten sets of vacuum systems are arranged, a certain safety distance and a maintenance space are required to be reserved between the vacuum pumps 02 of the two adjacent sets of vacuum systems, so that secondary piping and subsequent maintenance are facilitated, the occupied area of the vacuum pumps 02 of the ten sets of vacuum systems is large, and partial area of a plant is wasted. Moreover, the process time of each tube is relatively short, for example, the process time is 43min, the deposition step time is about 20min, which only accounts for 46% of the process time, the processes of entering and exiting the boat and raising the temperature, which do not need the vacuum pump 02, are eliminated, and the rest time of about 23min is the idle time of the vacuum pump 02, so the actual utilization rate of the vacuum pump 02 is relatively low, and most of the time, the vacuum pump 02 is in an idle state, thereby causing the waste of resources.
Based on the above situation, the embodiment of the application provides a novel vacuum pumping system, and the vacuum pumping system can reduce the floor area of a vacuum pump so as to reduce resource waste.
Referring to fig. 2 to 6, the present application discloses a vacuum pumping system applied to a semiconductor processing apparatus, wherein the semiconductor processing apparatus includes a plurality of process chambers 30, and the plurality of process chambers 30 of the semiconductor processing apparatus can be evacuated by the vacuum pumping system. The plurality of process chambers 30 may be divided into a plurality of process chamber sets, each process chamber set including a plurality of process chambers 30.
Alternatively, the process chambers 30 may be ten, divided into five groups of two, with the two process chambers 30 of each group being arranged back-to-back. Of course, the embodiments of the present application are not particularly limited with respect to the specific number of process chambers 30 and the arrangement thereof. For example, the process chambers 30 may be 9, divided into three groups of three; alternatively, the process chambers 30 may be 16, divided into four groups of four, and so on.
The disclosed vacuum pumping system comprises a plurality of groups of first vacuum pumping assemblies 10 and a plurality of groups of second vacuum pumping assemblies 20, wherein the plurality of groups of first vacuum pumping assemblies 10 are connected with the plurality of groups of process chamber groups in a one-to-one correspondence manner, so that the plurality of groups of process chamber groups are respectively vacuumized by the plurality of groups of first vacuum pumping assemblies 10. Additionally, the second evacuation assembly 20 may also be used to evacuate the process chamber 30.
Each group of first vacuum pumping assemblies 10 comprises a first vacuum pump 11 and a plurality of first vacuum pumping pipelines 12, the outlet ends of the plurality of first vacuum pumping pipelines 12 in each group of first vacuum pumping assemblies 10 are all connected with the first vacuum pump 11, and the inlet ends of the plurality of first vacuum pumping pipelines 12 in each group of first vacuum pumping assemblies 10 are respectively used for being connected with a plurality of process chambers 30 in a group of process chamber groups in a one-to-one correspondence manner.
Specifically, the air outlets of the plurality of first vacuum pipes 12 in each group of first vacuum assemblies 10 are all communicated with the air inlet of the first vacuum pump 11, and the respective air inlets of the plurality of first vacuum pipes 12 are respectively communicated with the air outlets at the tails of the plurality of process chambers 30 in the group of process chambers in a one-to-one correspondence manner. In this way, when the first vacuum pump 11 in each set of the first vacuum pumping assembly 10 is started, the gas in the plurality of process chambers 30 in a set of process chambers can be pumped out through the plurality of first vacuum pumping lines 12, so that the residual process gas in the process chambers 30 can be removed for the continuation of the process.
Alternatively, each set of the first vacuum pumping assembly 10 may comprise one first vacuum pump 11 and two first vacuum pumping lines 12, and correspondingly, each set of the process chambers comprises two process chambers 30, and at this time, the respective air inlets of the two vacuum pumping lines 12 are respectively communicated with the air outlets of the two process chambers 30 to respectively vacuum the two process chambers 30.
In the embodiment of the present application, the plurality of first vacuum lines 12 in each set of first vacuum pumping assemblies 10 share one first vacuum pump 11, so as to respectively vacuum a plurality of process chambers 30 in one set of process chamber groups through the shared first vacuum pump 11. It should be noted here that, by controlling the on/off of one of the first vacuum lines 12, one of the process chambers 30 in each group of process chambers is preferentially evacuated, and then the other process chambers 30 are evacuated, and of course, by controlling the simultaneous connection of a plurality of first vacuum lines 12 in each group of first vacuum assemblies 10, a plurality of process chambers 30 in each group of process chambers are evacuated simultaneously, and the specific situation may be selected according to the actual working condition.
In some embodiments, the second vacuum pumping assembly 20 comprises a second vacuum pump 21 and a second vacuum pumping line 22, an outlet end of the second vacuum pumping line 22 is connected to the second vacuum pump 21, and an inlet end of the second vacuum pumping line 22 is used for connecting to the plurality of process chambers 30 respectively.
Specifically, the air outlet of the second vacuum pipeline 22 is communicated with the air inlet of the second vacuum pump 21, and the air inlet of the second vacuum pipeline 22 is respectively communicated with the air outlets at the tail portions of the plurality of process chambers 30. In this way, when the second vacuum pump 21 is started, the gas in any process chamber 30 can be pumped out through the second vacuum pumping pipeline 22, so that the flexibility of the vacuum pumping process can be improved, and the process requirements can be ensured.
Here, in order to connect the second evacuation line 22 to the plurality of process chambers 30, respectively, a plurality of branch pipes (e.g., branch pipes 221 described below) may be provided at the gas inlet end of the second evacuation line 22, and each branch pipe is connected to one process chamber 30. In addition, in order to selectively evacuate one or more process chambers 30, a switching valve (e.g., a fourth switching valve 222 described below) may be provided in the branch pipe to control the connection or disconnection of the branch pipe, so that a part of the plurality of process chambers 30 may be evacuated according to actual circumstances.
The embodiment of the present application may adopt a plurality of sets of first vacuum pumping assemblies 10 to evacuate a plurality of process chamber sets, and each set of first vacuum pumping assemblies 10 may respectively or simultaneously evacuate a plurality of process chambers 30 in each set of process chamber sets, and each set of first vacuum pumping assemblies 10 includes one first vacuum pump 11, and a plurality of process chambers 30 in each set of process chamber sets may be evacuated by one first vacuum pump 11, that is, a mode of dragging more than one is adopted, and compared with a mode that each process chamber 30 corresponds to one first vacuum pump 11, the number of use of the first vacuum pumps 11 may be reduced. Therefore, the occupied area of the first vacuum pumps 11 can be reduced, the utilization rate of the first vacuum pumps 11 is improved, and the energy consumption and the operation cost can be further reduced.
In addition, the second vacuum pumping assembly 20 comprises a second vacuum pump 21 and a second vacuum pumping pipeline 22, the second vacuum pump 21 is respectively connected with the plurality of process chambers 30 through the second vacuum pumping pipeline 22, so that the plurality of process chambers 30 can be pumped by the second vacuum pump 21, and therefore the situation that the abnormal process chambers 30 need to be pumped simultaneously after the process is completed by the normal process chambers 30 can be avoided, the waiting time is shortened, the flexibility of equipment is increased, the generation efficiency is improved, and the capacity loss caused by abnormal process is reduced.
In some embodiments, the first evacuation line 12 may include a main pipe 120, a control valve 121, and a first switch valve 122, wherein the main pipe 120 is used for connecting the first vacuum pump 11 and the process chamber 30, the control valve 121 and the first switch valve 122 are both disposed on the main pipe 120, and the control valve 121 is located between the first switch valve 122 and the first vacuum pump 11.
Wherein, the main pipe 120 is used for circulating gas, the gas inlet of the main pipe 120 is communicated with the gas outlet at the tail part of the process chamber 30, and the gas outlet of the main pipe 120 is communicated with the gas inlet of the first vacuum pump 11. In this way, the gas in the process chamber 30 can flow along the main pipe 120 towards the first vacuum pump 11 under the action of the first vacuum pump 11, so that the process exhaust gas in the process chamber 30 can be exhausted.
The control valve 121 is used to control the flow of gas in the main conduit 120 to control the pressure in the main conduit 120. In some embodiments, the control valve 121 may include a valve body 1211 and a valve plate 1212, and the valve plate 1212 may be rotatably disposed in the valve body 1211 through a rotating shaft, and the rotating shaft may be connected to a driving part, or a rotating handle may be disposed on the rotating shaft. In this way, power can be input through the rotating shaft to drive the valve plate 1212 to rotate in the valve body 1211, so that the gap between the edge of the valve plate 1212 and the inner wall of the valve body 1211 can be changed, that is, the opening of the control valve 121 is changed by rotating the valve plate 1212, and the control of the gas flow in the main pipe 120 is realized to adjust the vacuum-pumping speed. Alternatively, the control valve 121 may be a butterfly valve, but is not limited thereto and may be in other forms.
The first switching valve 122 is used to control the connection or disconnection of the main pipe 120. Specifically, when the process chamber 30 needs to be vacuumized, the first switch valve 122 is switched to an open state, and the vacuuming operation can be performed at this time; when the process chamber 30 is not required to be vacuumized, the first switch valve 122 may be switched to the closed state in order to prevent air leakage and prevent the process chamber 30 from being unable to reach a predetermined vacuum degree, so that the main pipe 120 may be cut off to avoid air leakage. Alternatively, the first on-off valve 122 may be a shut-off valve, but of course, is not limited thereto, and may be in other forms.
Based on the setting, through the cooperation use of control valve 121 and first ooff valve 122, both can realize the control to the trunk line 120 break-make, can control the flow of gaseous in trunk line 120 again to can carry out the evacuation operation according to the technology demand.
In other embodiments, the first evacuation line 12 may further include a main pipe 120 and a first on-off valve 122, the main pipe 120 connecting the first vacuum pump 11 and the process chamber 30, the first on-off valve 122 being disposed on the main pipe 120. Based on this, the on-off of the main pipe 120 can be controlled by the on-off of the first switch valve 122 to meet the process requirement. Alternatively, the first on-off valve 122 may be a shut-off valve, but of course, is not limited thereto, and may be in other forms.
In some embodiments, the first evacuation line 12 may further comprise a bypass line 123, wherein an inlet end of the bypass line 123 is connected to the main line 120 upstream of the first on-off valve 122, i.e., between the first on-off valve 122 and the process chamber 30; the outlet end of the bypass conduit 123 is connected to the main conduit 120 downstream of the control valve 121, i.e. between the control valve 121 and the first vacuum pump 11. In addition, the nominal diameter of the bypass line 123 is smaller than that of the main line 120, and the bypass line 123 is provided with a second switching valve 124. In this way, the second switching valve 124 can be provided in parallel with the first switching valve 122 and the control valve 121, respectively. It will be appreciated that the nominal diameter is the diameter of each pipe in common. It should be noted here that upstream in the embodiments of the present application specifically refers to a front side in a gas flow direction during evacuation, and downstream refers to a rear side in the gas flow direction during evacuation.
Wherein the second switching valve 124 is used to control the connection or disconnection of the bypass pipe 123. When the vacuum pumping through the bypass pipe 123 is required, the second switch valve 124 may be switched to an open state, so that the bypass pipe 123 is connected, and thus the gas in the process chamber 30 may flow to the first vacuum pump 11 along the bypass pipe 123 to achieve the vacuum pumping; when the vacuum pumping through the bypass pipe 123 is not required, the second switching valve 124 may be switched to a closed state to shut off the bypass pipe 123, so that the gas in the process chamber 30 cannot flow along the bypass pipe 123 to the first vacuum pump 11. Alternatively, the second switching valve 124 may be a pneumatic shutoff valve.
Based on the above arrangement, since the nominal diameter of the bypass pipe 123 is smaller than that of the main pipe 120, the conductance of the bypass pipe 123 is small, and thus, the evacuation speed can be adjusted by switching the on/off state of the bypass pipe 123. The method specifically comprises the following steps: at the initial stage of evacuating the process chamber 30, the first on-off valve 122 is closed, the second on-off valve 124 is opened, at this time, under the pumping action of the first vacuum pump 11, the gas in the process chamber 30 firstly flows along a section of the main pipe 120 between the first on-off valve 122 and the process chamber 30, then enters the bypass pipe 123 and continues to flow along the bypass pipe 123, then enters a section of the main pipe 120 between the control valve 121 and the first vacuum pump 11 through the bypass pipe 123, and flows along the same, and finally is discharged by the first vacuum pump 11, thereby implementing the pre-evacuation process of the process chamber 30.
In the pre-vacuumizing process, because the conductance of the bypass pipeline 123 is relatively small, the pumping speed of the first vacuum pump 11 to the gas in the process chamber 30 is limited, so that the vibration of the wafer on the graphite boat can be relieved, the wafer is prevented from being scratched, and the wafer fragment rate is reduced.
After a period of time passes in the pre-vacuumizing process, the first switch valve 122 is opened, the second switch valve 124 is closed, the main pipeline 120 is completely unblocked at the moment, the bypass pipeline 123 is cut off, so that the gas in the process chamber 30 flows along the main pipeline 120 and is finally discharged by the first vacuum pump 11, and therefore the process chamber 30 is vacuumized, and the residual process gas is rapidly pumped out.
It should be noted that, in the embodiment of the present application, by providing the bypass pipeline 123 for pre-evacuation, the evacuation speed in the initial stage of the whole evacuation process can be reduced, and compared with the way that the whole evacuation process adopts a larger evacuation speed, the evacuation process in the embodiment of the present application is not easy to damage the wafer at the initial stage of evacuation, and the yield of the wafer is ensured.
To further adjust the conductance of the bypass conduit 123, a regulating valve 125 may also be provided in the bypass conduit 123, the regulating valve 125 being located downstream of the second switching valve 124, i.e. between the outlet end of the bypass conduit 123 and the second switching valve 124. Based on this, the flow cross-sectional area of the bypass pipeline 123 can be adjusted by controlling the opening of the adjusting valve 125, so that the conductance of the bypass pipeline 123 can be adjusted, and further, the vacuumizing process with various vacuumizing speeds can be realized, and the adaptability of the vacuumizing system is improved. Alternatively, the adjusting valve 125 may be a manual adjusting valve, but is not limited thereto and may be in other forms.
To control the operating pressure within the process chamber 30, the first evacuation line 12 may further include a pressure sensor 127, the pressure sensor 127 being connected to the main line 120 at a connection upstream of the first on-off valve 122, i.e., between the inlet end of the bypass line 123 and the connection of the main line 120 and the process chamber 30. Based on this, the vacuum pressure in the main pipe 120 may be detected by the pressure sensor 127.
In some embodiments, during the pre-evacuation process, the first vacuum pump 11 is started, the first switch valve 122 is closed, the second switch valve 124 is opened, and with the operation of the first vacuum pump 11, the gas in the process chamber 30 enters the first vacuum pump 11 along one section of the main pipe 120, the bypass pipe 123 and another section of the main pipe 120, and is exhausted by the first vacuum pump 11, during which the pressure sensor 127 detects the vacuum pressure in the main pipe 120 in real time; when the vacuum pressure in the main pipeline 120 reaches a preset pressure value, that is, the vacuum pressure in the process chamber 30 reaches a preset pressure value, the first switch valve 122 is opened, the second switch valve 124 is closed, at this time, the gas in the process chamber 30 completely enters the first vacuum pump 11 along the main pipeline 120 and is discharged by the first vacuum pump 11, in the process, the opening degree of the control valve 121 can be correspondingly adjusted according to the detection result of the pressure sensor 127, so that the working pressure in the process chamber 30 is controlled, and the process requirement is met.
After the process is completed, the process chamber 30 needs to be filled with nitrogen and refilled to realize pressure relief. To detect the pressure of the nitrogen-filled process chamber 30, the first vacuum line 12 may further include a pressure switch 126, wherein the pressure switch 126 is connected to the main pipe 120 at a connection between the pressure sensor 127 and the bypass pipe 123 for detecting the gas pressure in the main pipe 120. Based thereon, when the gas pressure within main conduit 120 (or process chamber 30) reaches a pressure value defined by pressure switch 126, the oven door of process chamber 30 may be opened to facilitate pressure relief. It should be noted that, for the specific structure of the pressure switch 126 and the operation principle thereof, reference may be made to the related art, and details thereof are not described herein.
In some embodiments, after the process is finished, both the first switch valve 122 and the second switch valve 124 are closed, and at this time, the main pipe 120 is cut off; then, nitrogen gas can be filled into the process chamber 30 through the nitrogen filling device to realize nitrogen filling and backfilling, so that the vacuum degree in the process chamber 30 is gradually reduced, the gas pressure is gradually increased, and when the pressure reaches a value limited by the pressure switch 126, the furnace door of the process chamber 30 can be opened, so that the pressure relief is realized.
In addition, the first vacuum line 12 may further include a pressure relief pipe 128, a third on/off valve 129, and a check valve 130. Wherein, one end of the pressure relief pipeline 128 is connected to the main pipeline 120, and the connection position is located between the bypass pipeline 123 and the pressure switch 126, the third switch valve 129 and the one-way valve 130 are both arranged on the pressure relief pipeline 128, and the one-way valve 130 is located downstream of the third switch valve 129.
Based on the above arrangement, when the gas pressure in the main pipe 120 reaches the value defined by the pressure switch 126, the oven door can be opened, and at the same time, the third on/off valve 129 is opened, so that the gas is sequentially discharged through the third on/off valve 129 and the check valve 130 to present a pressure relief protection state, and the external gas can be prevented from entering the main pipe 120 and the process chamber 30 through the pressure relief pipe 128.
In some embodiments, the control valve 121 may be a butterfly valve, wherein the control valve 121 may include a valve body 1211 and a valve plate 1212, the valve body 1211 having a through cavity 12110, the valve plate 1212 being reversibly disposed within the through cavity 12110 with its radial axis; in the case where the valve plate 1212 is perpendicular to the axis of the through cavity 12110, a predetermined gap is formed between the edge of the valve plate 1212 and the inner wall of the through cavity 12110. Alternatively, the preset gap may range from 0.01mm to 0.1mm, including 0.01mm, 0.03mm, 0.05mm, 0.08mm, 0.1mm, and the like, and may also be other values, which is not specifically limited in the embodiment of the present application.
Based on the above arrangement, friction between the valve plate 1212 and the valve body 1211 can be avoided, and meanwhile, due to the existence of the preset gap, even if dust in the process chamber 30 is accumulated in the control valve 121, the valve plate 1212 is not easily stuck, so that on the premise of ensuring stable process pressure, the control valve 121 can be further ensured to normally work, the maintenance time of the control valve 121 is reduced, and the service life of the control valve 121 is prolonged.
In order to connect the second evacuation line 22 with the plurality of process chambers 30, respectively, the second evacuation line 22 may include a common pipe 220, a plurality of branch pipes 221, and a plurality of fourth switching valves 222. The inlet ends of the branch pipes 221 are used for being connected with the process chambers 30 in a one-to-one correspondence manner, the outlet ends of the branch pipes 221 are all connected with the common pipe 220, the common pipe 220 is connected to the second vacuum pump 21, and the fourth switch valves 222 are arranged on the branch pipes 221 in a one-to-one correspondence manner. In this manner, the opening and closing of the plurality of fourth switching valves 222 can control the opening and closing of the respective branch pipes 221.
Based on the above arrangement, when the second vacuum pump 21 is started, the gas in the common pipe 220 can be extracted, and when the gas in one or more process chambers 30 needs to be extracted, the fourth switch valve 222 on the branch pipe 221 connected to the process chamber 30 can be correspondingly opened to achieve vacuum extraction.
It should be noted that, in some cases, the first vacuum pump 11 in each set of the first vacuum pumping assembly 10 is a core pump, and the second vacuum pump 21 can be a spare pump, that is, the second vacuum pump 21 can be turned on for scheduling and emergency problem handling when a special condition (e.g., a process abnormality, etc.) occurs.
In the process, the process may be exited in advance in one or more process chambers 30 in one group of process chamber groups corresponding to each group of the first vacuum pumping assembly 10 due to an abnormality such as a radio frequency alarm, and based on the principle of a communicating vessel, the plurality of process chambers 30 in one group of process chamber groups cannot maintain different pressures while sharing the rear pipe, so that the process in one or more process chambers 30 in one group of process chamber groups is stopped (i.e., an abnormality alarm), and in the case where the process is normally performed in other process chambers 30, the pressure difference between the process chamber 30 in which the process is stopped and the process chamber 30 in which the process is normally performed is large. In order to prevent the wafers in the process chamber 30 in the normal process from being damaged and ensure the good wafer yield, the process chamber 30 in the abnormal process is disconnected from the first vacuum line 12 of the process chamber 30 in the abnormal process, and the process chamber 30 in the abnormal process needs to be vacuumized after the process in the process chamber 30 in the normal process is completed, so that the production efficiency is seriously affected.
Based on the above, the above problem can be solved by activating the second vacuum pump 21. The method comprises the following specific steps: when an abnormal alarm is given in the process of one or more process chambers 30 in each group of process chamber groups, and when other process chambers 30 in the same group of process chamber groups normally perform the process, the process gas is stopped from being introduced into the process chamber 30 with the abnormal alarm, the first switch valve 122 in the first vacuumizing pipeline 12 correspondingly connected with the process chamber 30 with the abnormal alarm is closed (at this time, the second switch valve 124 is in a closed state), the fourth switch valve 222 on the branch pipeline 221 connected with the process chamber 30 with the abnormal alarm is opened, at this time, the process chamber 30 with the abnormal alarm is vacuumized through the common pipeline 220 and the corresponding branch pipeline 221 by the second vacuum pump 21, and the residual process gas in the process chamber 30 with the abnormal alarm is guaranteed to be completely pumped.
When the vacuum pressure in the process chamber 30 with the abnormal alarm reaches a preset pressure value, nitrogen is filled into the process chamber 30 through a nitrogen filling device for backfilling; when the gas pressure in the process chamber 30 reaches a limited value, the furnace door can be opened and the pressure can be released; after the alarm treatment is finished, the process can be continued again.
In the above process, the processes in the other process chambers 30 in the same group as the process chamber 30 having the abnormality alarm are performed in the normal steps without being affected by the abnormal process.
Based on the arrangement, the requirement that a plurality of process chambers 30 in the same group need to enter and exit simultaneously is met, so that the waiting time is reduced, the flexibility of equipment is improved, and the capacity loss caused by equipment or abnormal discharge is reduced.
In addition, in order to realize the connection and the sealing of various valve components and pipelines or the connection and the sealing of a pump body and the pipelines, the valve components and the pipelines can be connected through standard caliper screws and sealing assemblies, so that the connection reliability is ensured, and the sealing performance of the connection position is also ensured.
Specifically, a first flange can be arranged at the end of the valve member, a second flange is arranged at the end of the pipeline, the first flange is butted with the second flange when the pipeline is installed, a sealing gasket member such as a sealing ring is arranged between the first flange and the second flange, then two ends of the caliper are respectively placed on the outer sides of the first flange and the second flange, and then screws are screwed to enable two ends of the caliper to be close to each other, so that the first flange and the second flange are clamped. It is noted here that reference can also be made to the prior art for standard caliper screws.
In some embodiments, the main pipe 120 and the first on-off valve 122, the control valve 121 or the first vacuum pump 11 may be connected by standard caliper screws and sealing assemblies, respectively; the bypass line 123 and the second on-off valve 124 or the regulating valve 125 can be connected by standard caliper screws and seal assemblies, respectively; the pressure relief pipe 128 and the third on/off valve 129 can be connected by a standard caliper screw and seal assembly; the common conduit 220 may be connected to the second vacuum pump 21 and the branch conduit 221 may be connected to the fourth switching valve 222 by standard caliper screws and seal assemblies.
Based on the vacuum-pumping system, the embodiment of the application also discloses semiconductor process equipment, and the disclosed semiconductor process equipment comprises the vacuum-pumping system.
Based on the semiconductor process equipment, the embodiment of the application also discloses a vacuumizing method, which is applied to the semiconductor process equipment and comprises the following steps:
when the process chambers in each group of process chamber groups are processed, starting a first vacuumizing pipeline to vacuumize the process chambers correspondingly connected with the first vacuumizing pipeline;
when one or more process chambers in each group of process chamber groups give an abnormal alarm in the process, and other process chambers in the same group of process chamber groups normally carry out the process, the first vacuumizing pipeline correspondingly connected with the process chamber giving the abnormal alarm is closed, and meanwhile, the second vacuumizing pipeline is opened so as to vacuumize the process chamber giving the abnormal alarm.
It should be noted that, in the embodiments of the present application, the specific implementation process and principle of the vacuum pumping method have been described in detail in the foregoing, and specific reference may be made to the foregoing for details, which are not repeated herein.
In summary, the embodiment of the application can reduce the floor area of the vacuum-pumping system, save energy, reduce cost and increase the output per unit area; moreover, the maintenance time of the control valve 121 can be reduced, the service life of the control valve 121 can be prolonged, and the productivity can be improved; the scratching and the breakage of the wafer are reduced, and the yield of the wafer is improved; in addition, the waiting time can be reduced when process abnormity occurs, the flexibility of equipment is improved, and the capacity loss is reduced.
While the present embodiments have been described with reference to the accompanying drawings, it is to be understood that the present embodiments are not limited to those precise embodiments, which are intended to be illustrative rather than restrictive, and that various changes and modifications may be effected therein by one skilled in the art without departing from the scope of the appended claims.

Claims (11)

1. An evacuation system for evacuating a plurality of process chambers (30) of a semiconductor processing apparatus, wherein the plurality of process chambers (30) are grouped into a plurality of process chamber groups, each process chamber group comprising a plurality of process chambers (30), the evacuation system comprising: a plurality of sets of first evacuation assemblies (10), and second evacuation assemblies (20);
the multiple groups of first vacuumizing assemblies (10) are used for being connected with multiple groups of process chambers in a one-to-one correspondence manner, each first vacuumizing assembly (10) comprises a first vacuum pump (11) and multiple first vacuumizing pipelines (12), the outlet ends of the multiple first vacuumizing pipelines (12) in each group of first vacuumizing assemblies (10) are all connected with the first vacuum pump (11), and the inlet ends of the multiple first vacuumizing pipelines (12) in each group of first vacuumizing assemblies (10) are respectively used for being connected with the multiple process chambers (30) in one group of process chambers in a one-to-one correspondence manner;
the second vacuumizing assembly (20) comprises a second vacuum pump (21) and a second vacuumizing pipeline (22), the outlet end of the second vacuumizing pipeline (22) is connected with the second vacuum pump (21), and the inlet end of the second vacuumizing pipeline (22) is used for being respectively connected with the plurality of process chambers (30).
2. An evacuation system according to claim 1, wherein the first evacuation line (12) comprises a main pipe (120), a control valve (121) and a first on-off valve (122);
the main pipeline (120) is used for connecting the first vacuum pump (11) and the process chamber (30), the control valve (121) and the first switch valve (122) are arranged on the main pipeline (120), and the control valve (121) is located between the first switch valve (122) and the first vacuum pump (11).
3. An evacuation system according to claim 2, wherein the first evacuation line (12) further comprises a bypass conduit (123);
the connection of the inlet end of the bypass pipe (123) to the main pipe (120) is located upstream of the first on-off valve (122);
the connection of the outlet end of the bypass conduit (123) to the main conduit (120) is downstream of the control valve (121);
the nominal diameter of the bypass pipeline (123) is smaller than that of the main pipeline (120);
the bypass pipeline (123) is provided with a second switch valve (124).
4. An evacuation system according to claim 3, wherein the first evacuation line (12) further comprises a regulating valve (125);
the regulating valve (125) is disposed in the bypass pipe (123), and the regulating valve (125) is located downstream of the second switching valve (124).
5. An evacuation system according to claim 3 or 4, wherein the first evacuation line (12) further comprises a pressure sensor (127);
the pressure sensor (127) is connected to the main pipe (120) at a position upstream of the first switching valve (122) for detecting a vacuum pressure in the main pipe (120).
6. An evacuation system according to claim 5, wherein the first evacuation line (12) further comprises a pressure switch (126);
the pressure switch (126) is connected to the main pipeline (120) and the connection position is located between the pressure sensor (127) and the bypass pipeline (123) and used for detecting the gas pressure in the main pipeline (120).
7. An evacuation system according to claim 6, wherein the first evacuation line (12) further comprises a pressure relief conduit (128), a third on/off valve (129) and a one-way valve (130);
one end of the pressure relief pipeline (128) is connected to the main pipeline (120), the connection position of the pressure relief pipeline is located between the bypass pipeline (123) and the pressure switch (126), the third switch valve (129) and the one-way valve (130) are arranged on the pressure relief pipeline (128), and the one-way valve (130) is located at the downstream of the third switch valve (129).
8. The evacuation system of claim 2, wherein the control valve (121) is a butterfly valve;
the control valve (121) comprises a valve body (1211) and a valve plate (1212), wherein the valve body (1211) is provided with a through cavity (12110), and the valve plate (1212) is arranged in the through cavity (12110) in a manner of being capable of being overturned by taking the radial direction of the valve plate as an axis;
under the condition that the valve plate (1212) is perpendicular to the axis of the through cavity (12110), a preset gap is formed between the edge of the valve plate (1212) and the inner wall of the through cavity (12110).
9. An evacuation system according to claim 1, wherein the second evacuation line (22) comprises a common conduit (220), a plurality of branch conduits (221) and a plurality of fourth switching valves (222);
the inlet ends of the branch pipes (221) are used for being connected with the process chambers (30) in a one-to-one correspondence mode, and the outlet ends of the branch pipes (221) are all connected with the common pipe (220); the common pipeline (220) is connected with the second vacuum pump (21);
the fourth switching valves (222) are arranged in the branch pipes (221) in a one-to-one correspondence manner.
10. A semiconductor processing apparatus, comprising the evacuation system of any of claims 1 to 9.
11. A method of evacuating a vacuum applied to the semiconductor processing apparatus of claim 10, the method comprising:
when the process chambers in each group of process chambers are processed, starting the first vacuumizing pipeline to vacuumize the process chambers correspondingly connected with the first vacuumizing pipeline;
when one or more process chambers in each group of process chamber groups alarm abnormally in the process, and other process chambers in the same group of process chamber groups carry out processes normally, the first vacuumizing pipeline correspondingly connected with the process chambers alarming abnormally is closed, and meanwhile, the second vacuumizing pipeline is opened, so that the process chambers alarming abnormally are vacuumized.
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TW112110375A TWI847611B (en) 2022-03-29 2023-03-21 Vacuum pumping system, semiconductor process equipment, and vacuum pumping method thereof
KR1020247030407A KR20240148408A (en) 2022-03-29 2023-03-21 Vacuum pumping system, semiconductor process device and vacuum pumping method thereof
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