CN110894595A

CN110894595A - Vapor deposition apparatus and cleaning method thereof

Info

Publication number: CN110894595A
Application number: CN201811068566.2A
Authority: CN
Inventors: 王建龙; 李兴存
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2018-09-13
Filing date: 2018-09-13
Publication date: 2020-03-20
Anticipated expiration: 2038-09-13
Also published as: CN110894595B

Abstract

The invention discloses vapor deposition equipment and a cleaning method thereof. The device comprises a process chamber, at least one group of capacitive coupling electrode assemblies arranged in the process chamber and at least one group of inductive coupling assemblies positioned outside the process chamber, wherein each group of inductive coupling assemblies comprises a medium cylinder and a radio frequency coil surrounding the periphery of the medium cylinder, the first end of the medium cylinder can be connected with the process chamber in an on-off manner, and the second end of the medium cylinder is used for being connected with a cleaning gas source in an on-off manner; the input end of the radio frequency coil is connected with a radio frequency power supply through a matcher, and the output end of the radio frequency coil is connected with one end of the capacitive coupling electrode assembly corresponding to the radio frequency coil. The radio frequency coil can generate higher plasma density, the radio frequency coil can be short in distance from the inner path of the process chamber, the recombination rate of F free radicals is low, the density of the F free radicals is improved, and in addition, the cleaning efficiency can be improved through the cooperation of in-situ cleaning.

Description

Vapor deposition apparatus and cleaning method thereof

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to vapor deposition equipment and a cleaning method of the vapor deposition equipment.

Background

An Enhanced Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus is a film deposition apparatus commonly used in the related fields of photovoltaics, Light Emitting Diodes (LEDs), Micro-Electro-Mechanical systems (MEMS), Integrated Circuits (ICs), and the like, and is mainly used for depositing a SiO2 or SiNx or SiON film on the surface of a wafer (wafer), and the apparatus is widely used in the related semiconductor fields at present.

In the PECVD process, particles have great influence on the process. Due to the long-term film formation, the film layer inside the chamber becomes extremely thick and is easy to fall off. In order to avoid the contamination of the chamber caused by the peeling of the film and reduce the manual cleaning manner of the chamber, the chamber is generally cleaned by using the system of the chamber itself or introducing other cleaning sources, so as to reduce the average maintenance period of the equipment and improve the cleaning effect inside the chamber.

In the related art, the inductive coupling device includes a capacitive coupling electrode located in the chamber, and the deposition process is completed by ionizing the process gas through discharge of the capacitive coupling electrode to form plasma. To accomplish cleaning, the cleaning of the deposited films within the chamber is typically performed by installing a remote plasma source in conjunction with capacitively coupled electrodes.

However, the remote plasma generated F radicals generally require long and narrow piping for feeding into the chamber, because the remote plasma source generates high density F radicals depending on conditions of high gas pressure, high purge gas flow and high power, but the operating pressure of the direct plasma system is generally in the order of 1Torr, so that the pressure gradient between the remote plasma source and the chamber is reduced by transporting the radicals to the process chamber through the gas transport piping, and the gas pressure is prevented from changing dramatically beyond the ignition window of the direct plasma source. However, the gas transport conduit between the remote plasma source and the process chamber increases the adhesion of the F radicals to the inner walls of the gas lines, reducing the concentration of the F radicals. The direct plasma mode is adopted for cleaning, the cleaning speed is slow, and the service life of the uniform flow plate can be reduced. In addition, the remote plasma source is often expensive, and the microwave source and the discharge cavity are loss parts, so that the use cost is high.

Disclosure of Invention

The invention aims to at least solve one technical problem in the prior art, and provides a vapor deposition device and a cleaning method of the vapor deposition device.

In order to achieve the above object, in a first aspect of the present invention, there is provided a vapor deposition apparatus comprising a process chamber, at least one set of capacitive coupling electrode assemblies disposed inside the process chamber, and at least one set of inductive coupling assemblies located outside the process chamber, each set of inductive coupling assemblies comprising a dielectric cylinder and a radio frequency coil surrounding an outer circumference of the dielectric cylinder, wherein,

the first end of the medium cylinder can be connected with the process chamber in an on-off manner, and the second end of the medium cylinder is used for being connected with a cleaning gas source in an on-off manner; the input end of the radio frequency coil is connected with a radio frequency power supply through a matcher, and the output end of the radio frequency coil is connected with one end of the capacitive coupling electrode assembly corresponding to the radio frequency coil.

Optionally, the vapor deposition apparatus further includes at least one voltage adjusting element, which is disposed in series between the rf coil and the capacitive coupling electrode assembly corresponding thereto, for adjusting a voltage of the capacitive coupling electrode assembly corresponding thereto.

Optionally, the voltage adjusting element is an adjustable capacitor, a first end of the adjustable capacitor is electrically connected to the output end of the radio frequency coil corresponding to the adjustable capacitor, and a second end of the adjustable capacitor is electrically connected to the first end of the capacitive coupling electrode assembly corresponding to the adjustable capacitor.

Optionally, the radio frequency coil is of a cylindrical structure.

Optionally, each set of the capacitive coupling electrode assemblies is connected to the process gas source through an air inlet line.

Optionally, each group of capacitive coupling electrode assemblies includes a first electrode plate and a second electrode plate disposed opposite to the first electrode plate, wherein the first electrode plate is provided with a plurality of air inlets penetrating through the thickness of the first electrode plate, the air inlets are communicated with the air inlet pipeline, the first electrode plate is electrically connected to the output end of the radio frequency coil corresponding to the first electrode plate, and the second electrode plate is grounded.

Optionally, the vapor deposition apparatus further includes at least one switching valve, each switching valve corresponds to one of the media cartridges, and the switching valve is disposed at the bottom opening of the corresponding media cartridge and is configured to control on/off of the media cartridge and the process chamber.

Optionally, the vapor deposition apparatus further includes a shielding box, the shielding box is located above the process chamber, the inductive coupling assembly is disposed inside the shielding box, and the radio frequency power supply and the matcher are both disposed outside the shielding box.

Optionally, the diameter of the medium cylinder ranges from 50mm to 100mm, and/or the height of the medium cylinder ranges from 100mm to 300mm, and/or the gap between the medium cylinder and the radio frequency coil ranges from 1mm to 10 mm.

In a second aspect of the present invention, there is provided a cleaning method of a vapor deposition apparatus, the vapor deposition apparatus being the vapor deposition apparatus described above, the cleaning method comprising:

step S110, the radio frequency power supply respectively provides radio frequency power to the radio frequency coil and the capacitive coupling electrode assembly through the matcher;

step S120, providing cleaning gas to the medium cylinder and the process chamber;

step S130, capacitively discharging the capacitive coupling electrode assembly, and exciting a cleaning gas in the process chamber to form a main cleaning plasma; meanwhile, the radio frequency coil is controlled to be in a discharge mode, and cleaning gas in the medium cylinder is excited to form auxiliary cleaning plasma;

and step S140, cleaning the process chamber for a preset time by using the main cleaning plasma and the auxiliary cleaning plasma.

According to the vapor deposition equipment and the cleaning method thereof, the mode of combining the inductive coupling assembly and the capacitive coupling electrode assembly is adopted, the radio frequency coil can generate higher plasma density, the path of the radio frequency coil from the inner part of the process chamber is short, the recombination rate of the F free radicals is low, the density of the F free radicals is improved, and the cleaning efficiency can be improved by the cooperation of in-situ cleaning. In addition, the radio frequency coil and the capacitive coupling electrode assembly can share a radio frequency power supply, a matcher and the like, so that the manufacturing cost of the inductive coupling device can be effectively reduced, and the economic benefit is improved.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:

FIG. 1 is a schematic structural view of a vapor deposition apparatus according to a first embodiment of the present invention;

FIG. 2 is a top view of the vapor deposition apparatus shown in FIG. 1;

FIG. 3 is an equivalent circuit diagram of a vapor deposition apparatus according to a second embodiment of the present invention during a deposition process;

FIG. 4 is an equivalent circuit diagram of a vapor deposition apparatus during a cleaning process according to a third embodiment of the present invention;

FIG. 5 is a flowchart of a cleaning method of a vapor deposition apparatus according to a fourth embodiment of the present invention.

Description of the reference numerals

100: a vapor deposition apparatus;

110: a process chamber;

120: a capacitive coupling electrode assembly;

121: a first capacitive coupling electrode assembly;

122: a second capacitive coupling electrode assembly;

123: a third capacitive coupling electrode assembly;

124: a fourth capacitive coupling electrode assembly;

125: a first electrode plate;

125 a: an air inlet;

126: a second polar plate;

130: an inductive coupling assembly;

131: a media cartridge;

131 a: a first media cartridge;

131 b: a second media cartridge;

131 c: a third media cartridge;

131 d: a fourth media cartridge;

132: a radio frequency coil;

132 a: a first radio frequency coil;

132 b: a second radio frequency coil;

132 c: a third radio frequency coil;

132 d: a fourth radio frequency coil;

140: a matcher;

150: a radio frequency power supply;

160: a voltage regulating element;

161: a first tunable capacitor;

162: a second tunable capacitor;

163: a third adjustable capacitor;

164: a fourth adjustable capacitor;

170: an air intake line;

180: an on-off valve;

181: a first on-off valve;

182: a second on-off valve;

183: a third on-off valve;

184: a fourth switching valve;

191: a vacuum pumping device;

192: and a shielding box.

Detailed Description

The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.

As shown in fig. 1, 2, 3, and 4, a first aspect of the present invention relates to a vapor deposition apparatus 100, the vapor deposition apparatus 100 comprising a process chamber 110, at least one set of capacitive coupling electrode assemblies 120 disposed within the process chamber 110, and at least one set of inductive coupling assemblies 130 located outside the process chamber 110. Each set of inductive coupling assemblies 130 includes a dielectric cylinder 131 and a surrounding dielectricAnd a radio frequency coil 132 on the outer periphery of the mass cylinder 131 (the inductance of the radio frequency coil 130 may be in the range of 0.1uH to 200 uH). Wherein, the first end of the medium cylinder 131 can be connected with the process chamber 110 in an on-off way, and the second end of the medium cylinder 131 is used for being connected with the cleaning gas source Q in an on-off way_sAnd (4) connecting. The input end of the rf coil 132 is connected to an rf power source 150 (the frequency is usually 400 KHz-60 MHz) through a matching unit 140, and the output end of the rf coil 132 is connected to one end of the corresponding capacitive coupling electrode assembly 120.

Generally, the process of the vapor deposition apparatus generally includes a deposition process and a cleaning process after the deposition process is completed.

Specifically, as shown in fig. 1, when the deposition process is performed, the process chamber 110 and the medium barrel 131 need to be evacuated so that the inside of the process chamber 110 and the inside of the medium barrel 131 are in a vacuum state. At this time, the RF coil 132 is only in the inductive mode because, since the dielectric cylinder 131 is in the vacuum state, no gas ionization occurs, and the RF power of the deposition process is lower than that of the cleaning process (the power density of the capacitive coupling electrode assembly 120 is less than (0.2W/cm)²) It is not sufficient to satisfy the condition of the capacitive breakdown voltage of the rf coil 132 (in the order of KV), so that the rf coil 132 does not have an ionization discharge process and only plays a role of an inductor. Thus, the rf power provided by the rf power source 150 is applied to the rf coil 132 and the capacitive coupling electrode assembly 120 through the matching unit 140, and at this time, the capacitive coupling electrode assembly 120 excites the process gas to generate discharge under the action of the high voltage electric field to form high density plasma, so that the deposition process and the like can be completed by using the formed plasma.

Specifically, as shown in fig. 1, when the cleaning process is performed, the process chamber 110 and the inside of the media cartridge 131 do not need to be vacuumized, and at this time, a cleaning gas (e.g., NF) is supplied into the media cartridge 131₃Gas, etc.), so that the rf power supplied from the rf power source 150 is applied to the rf coil 132 and the capacitive coupling electrode assembly 120 via the matching unit 140, respectively, and the rf coil 132 can bear a high power density (4W/cm)²) The power which can be applied is generallyAbout 20 times as many as the capacitively coupled electrode assembly 120. The rf power applied to the rf coil 132 may ionize the cleaning gas in the dielectric cylinder 131 to form an auxiliary cleaning plasma, and the rf power applied to the capacitive coupling electrode assembly 120 may ionize the process gas in the process chamber 110 to form a main cleaning plasma, so that the cleaning process may be completed using the formed main cleaning plasma and the auxiliary cleaning plasma.

Through the above analysis, it can be seen that in the vapor deposition apparatus 100 of the present embodiment, the inductive coupling assembly 130 and the capacitive coupling electrode assembly 120 are combined, and when the cleaning process is performed, the rf coil 132 can generate a higher plasma density, and compared with the remote plasma source of the background art, the rf coil 132 can have a short path from the interior of the process chamber 110, the recombination rate of the F radicals is low, and the density of the F radicals is increased, and in addition, the cooperation of the in-situ cleaning, the cleaning efficiency can be increased. In addition, since the rf coil 132 and the capacitive coupling electrode assembly 120 can share the rf power source 150 and the matcher 140, etc., the manufacturing cost of the vapor deposition apparatus 100 can be effectively reduced, and economic benefits can be improved.

It should be noted that, the specific number of the inductive coupling element 130 and the capacitive coupling electrode element 120 is not limited, and the number of the inductive coupling element 130 and the capacitive coupling electrode element 120 required may be determined according to actual needs.

As shown in FIG. 1, the vapor deposition apparatus 100 further includes at least one voltage regulating element 160, the voltage regulating element 160 being disposed in series between its corresponding RF coil 132 and the capacitive coupling electrode assembly 120. The voltage adjusting element 160 is used for adjusting the voltage of the corresponding capacitive coupling electrode assembly 120, so that the voltage of each capacitive coupling electrode assembly 120 can be balanced.

Specifically, as shown in fig. 1, the voltage adjusting element 160 may be an adjustable capacitor, a first end of the adjustable capacitor is electrically connected to the output end of the rf coil 132 corresponding thereto, and a second end of the adjustable capacitor is electrically connected to the first end of the capacitive coupling electrode assembly 120 corresponding thereto.

Of course, the voltage adjusting element 160 may be other electronic components capable of adjusting voltage besides the adjustable capacitor.

As shown in fig. 1, 3 and 4, the inductive coupling assembly 130 may include four dielectric cartridges 131 and four radio frequency coils 132, which are a first dielectric cartridge 131a, a first radio frequency coil 132a, a second dielectric cartridge 131b, a second radio frequency coil 132b, a third dielectric cartridge 131c, a third radio frequency coil 132c, a fourth dielectric cartridge 131d and a fourth radio frequency coil 132d, respectively. Accordingly, the number of tunable capacitors is also four, namely a first tunable capacitor 161, a second tunable capacitor 162, a third tunable capacitor 163 and a fourth tunable capacitor 164. Accordingly, the number of the capacitive coupling electrode assemblies 120 is also four, respectively, the first capacitive coupling electrode assembly 121, the second capacitive coupling electrode assembly 122, the third capacitive coupling electrode assembly 123 and the fourth capacitive coupling electrode assembly 124.

Specifically, as shown in fig. 1, an input terminal of the first rf coil 132a is electrically connected to the rf power source 150 via the matcher 140, an output terminal of the first rf coil 132a is electrically connected to a first terminal of the first tunable capacitor 161, a second terminal of the first tunable capacitor 161 is electrically connected to a first terminal of the first capacitive coupling electrode assembly 121, and a second terminal of the first capacitive coupling electrode assembly 121 is grounded.

As shown in fig. 1, an input terminal of the second rf coil 132b is electrically connected to the rf power source 150 via the matcher 140, an output terminal of the second rf coil 132b is electrically connected to a first terminal of the second tunable capacitor 162, a second terminal of the second tunable capacitor 162 is electrically connected to a first terminal of the second capacitive coupling electrode assembly 122, and a second terminal of the second capacitive coupling electrode assembly 122 is grounded.

With continued reference to fig. 1, the input terminal of the third rf coil 132c is electrically connected to the rf power source 150 via the matcher 140, the output terminal of the third rf coil 132c is electrically connected to the first terminal of the third tunable capacitor 163, the second terminal of the third tunable capacitor 163 is electrically connected to the first terminal of the third capacitive coupling electrode assembly 123, and the second terminal of the third capacitive coupling electrode assembly 123 is grounded.

With continued reference to fig. 1, an input terminal of the fourth rf coil 132d is electrically connected to the rf power source 150 via the matcher 140, an output terminal of the fourth rf coil 132d is electrically connected to a first terminal of the fourth tunable capacitor 164, a second terminal of the fourth tunable capacitor 164 is electrically connected to a first terminal of the fourth capacitive coupling electrode assembly 124, and a second terminal of the fourth capacitive coupling electrode assembly 124 is grounded.

Preferably, as shown in FIG. 1, the radio frequency coil 132 is of a cylindrical configuration. The rf coil 132 with a cylindrical structure can greatly increase the density of the auxiliary cleaning plasma generated by exciting the cleaning gas during the cleaning process.

As shown in FIG. 1, each set of capacitive coupling electrode assemblies 120 is connected to the process gas source P through the gas inlet line 170_sAnd (4) connecting. In performing the deposition process, a process gas source P may be utilized_sA process gas is supplied into the process chamber 110 through the gas inlet line 170 and the capacitive coupling electrode assembly 120 so that a deposition process can be performed by exciting the process gas to generate a plasma using the rf power applied to the capacitive coupling electrode assembly 120.

Specifically, as shown in fig. 1, as a specific structure of the capacitive coupling electrode assembly 120, the capacitive coupling electrode assembly 120 includes a first electrode plate 125 and a second electrode plate 126 disposed opposite to the first electrode plate 125, a plurality of air inlets 125a penetrating through the thickness of the first electrode plate 125 are disposed on the first electrode plate 125, the air inlets 125a are communicated with an air inlet pipeline 170, the first electrode plate 125 is directly electrically connected to an output end of the corresponding rf coil 132, or the first electrode plate 125 may also be indirectly electrically connected to an output end of the corresponding rf coil 132 through an adjustable capacitor, and the second electrode plate 126 is grounded.

As shown in fig. 1, the first plate 125 and the second plate 126 are spaced apart from each other to form a capacitor structure, the first plate 125 has a plurality of gas inlets 125a, the process gas can enter the space between the first plate 125 and the second plate 126 through the plurality of gas inlets 125a, and when the first plate 125 is applied with a voltage, an electric field is formed to ionize the process gas filled between the first plate 125 and the second plate 126 to form a plasma.

Alternatively, the diameter of each of the media cartridges 131 may be in a range of 50mm to 100mm, and the height of each of the media cartridges 131 may be in a range of 100mm to 300 mm. The gap between the dielectric cylinder 131 and the radio frequency coil 132 may range from 1mm to 10 mm. The diameter of the dielectric cylinder 131 is limited to 50 mm-100 mm, so that the radio frequency coil 132 can still work efficiently under high pressure, because the reduction of the diameter of the dielectric cylinder 131 increases the frequency of unit electron collision, so that electrons transfer energy to neutral gas, and the electron temperature and ion ratio are reduced. Therefore, by reducing the diameter of the dielectric cylinder 131, sufficient power density of the rf coil 132 under high gas pressure conditions can be satisfied, and efficient discharge performance under high collision frequency, low mean free path conditions can be maintained, thereby allowing generation of F radical density and composition comparable to that of a remote plasma source.

As shown in fig. 1, the vapor deposition apparatus 100 further includes at least one switching valve 180 (as shown in fig. 1, the number of the switching valves 180 is four, and the switching valves 180 are respectively a first switching valve 181, a second switching valve 182, a third switching valve 183, and a fourth switching valve 184), and a vacuum unit 191, wherein each switching valve 180 corresponds to one of the media cartridges 131, and the switching valve 180 is disposed at a bottom opening of the corresponding media cartridge 131 to control on/off of the media cartridge 131 and the process chamber 110.

Specifically, when the deposition process is performed, the cleaning gas source Qs is turned off, and then the switch valve 180 is opened, so as to vacuumize the medium cylinder 131 by the vacuum pumping device 191, and the switch valve 180 is closed after the medium cylinder 131 and the process chamber 110 reach a high vacuum, which is to realize that the rf coil 132 is only in the inductive mode during the deposition process. After confirming the closing of the switching valve 180, the process gas source P is turned on_sThe process gas is introduced into the process chamber 110 through the gas inlet pipe 170 and the capacitive coupling electrode assembly 120, the RF power source 150 is turned on after the pressure is stabilized to start the deposition process, and the RF power source 150 and the process gas source P are turned off when the deposition film thickness is reached_sThe process chamber 110 is pumped down to a low vacuum state to complete the deposition process.

In the deposition process stage, the equivalent circuit diagram of the vapor deposition apparatus 100 is shown in FIG. 3, in which case the RF coil 132 is equivalent to an inductor, C_sheathIs a sheath capacitor, L_plasmaEquivalent inductance, R, formed for capacitively coupling the electrode assembly 120 to discharge plasma current_plasmaA resistance of the plasma formed by discharging the capacitive coupling electrode assembly 120.

Specifically, when the cleaning process is performed, first, the on-off valve 180 is opened, and the cleaning gas source Q is turned on_sThe cleaning gas enters the medium cylinder 131, the radio frequency power is loaded after the voltage is stabilized, the capacitive coupling electrode assembly 120 obtains a proper voltage by adjusting the position of the adjustable capacitor, the inductive coupling source-assisted capacitive coupling source cleaning process is started, the radio frequency power source is turned off after the film layer is cleaned, the cleaning gas source Qs is turned off, the medium cylinder 131 and the process chamber 110 are pumped to a high vacuum state by the vacuumizing device 191, then the valve 180 is turned off, and finally the cleaning process is completed.

An equivalent circuit diagram of the vapor deposition apparatus 100 at the cleaning process stage is shown in FIG. 4, wherein L_plasma1Equivalent inductance, R, formed for capacitively coupling the electrode assembly 120 to discharge plasma current_plasma1Resistance, L, of plasma formed by discharging capacitively coupled electrode assembly 120_plasma2Equivalent inductance, R, formed for the RF coil 132 discharge plasma current_plasma2An equivalent resistance formed by discharging the radio frequency coil 132. In this cleaning process stage, the rf coil 132 can be equivalent to a transformer coupling model, i.e., the rf coil 132 is the primary and the plasma in the dielectric cylinder 131 is the secondary.

As shown in fig. 1, in order to prevent the inductive coupling assembly 130 from being interfered by the rf, the vapor deposition apparatus 100 further includes a shielding box 192, the shielding box 192 is located above the process chamber 110, the inductive coupling assembly 130 is located inside the shielding box 192, and the rf power source 150 and the matcher 140 are both disposed outside the shielding box 192.

In a second aspect of the present invention, as shown in fig. 5, a cleaning method S100 for a vapor deposition apparatus is provided, where the vapor deposition apparatus is the vapor deposition apparatus described above, and the specific structure thereof can refer to the related description above, which is not repeated herein. The cleaning method S100 includes:

s110, the radio frequency power supply supplies radio frequency power to the radio frequency coil and the capacitive coupling electrode assembly through the matcher respectively.

And S120, supplying cleaning gas to the medium cylinder and the process chamber.

S130, capacitively discharging the capacitive coupling electrode assembly, and exciting a cleaning gas in the process chamber to form a main cleaning plasma; meanwhile, the radio frequency coil is controlled to be in a discharge mode, and cleaning gas in the medium cylinder is excited to form auxiliary cleaning plasma;

and S140, cleaning the process chamber for a preset time by using the main cleaning plasma and the auxiliary cleaning plasma.

In the cleaning method of the vapor deposition equipment, when the cleaning process is carried out, the radio frequency coil can generate higher plasma density, compared with a remote plasma source in the background technology part, the radio frequency coil can be short in distance from the inner path of the process chamber, the recombination rate of the F free radicals is low, the density of the F free radicals is improved, and in addition, the cleaning efficiency can be improved through the cooperation of in-situ cleaning. In addition, the radio frequency coil and the capacitive coupling electrode assembly can share a radio frequency power supply, a matcher and the like, so that the manufacturing cost of the vapor deposition equipment can be effectively reduced, and the economic benefit is improved.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims

1. A vapor deposition apparatus comprising a process chamber, at least one set of capacitive coupling electrode assemblies disposed within the process chamber, and at least one set of inductive coupling assemblies located outside the process chamber, each set of inductive coupling assemblies comprising a dielectric cylinder and a radio frequency coil surrounding an outer periphery of the dielectric cylinder, wherein,

2. The vapor deposition apparatus of claim 1, further comprising at least one voltage regulating element disposed in series between the rf coil and the capacitive coupling electrode assembly to regulate a voltage of the capacitive coupling electrode assembly corresponding thereto.

3. The vapor deposition apparatus of claim 2, wherein the voltage adjustment element is an adjustable capacitor, a first end of the adjustable capacitor is electrically connected to the corresponding output end of the rf coil, and a second end of the adjustable capacitor is electrically connected to the corresponding first end of the capacitive coupling electrode assembly.

4. A vapor deposition apparatus according to any of claims 1to 3, wherein the rf coil is of a cylindrical configuration.

5. A vapor deposition apparatus according to any one of claims 1to 3, wherein each set of capacitive coupling electrode assemblies is connected to the process gas source via a gas inlet line.

6. The vapor deposition apparatus of claim 5, wherein each of the capacitive coupling electrode assemblies comprises a first electrode plate and a second electrode plate disposed opposite to the first electrode plate, wherein the first electrode plate has a plurality of air inlets formed therethrough, the air inlets are communicated with the air inlet pipeline, the first electrode plate is electrically connected to the output end of the RF coil corresponding thereto, and the second electrode plate is grounded.

7. The vapor deposition apparatus according to any one of claims 1to 3, further comprising at least one on-off valve, wherein each on-off valve corresponds to one of the media cartridges, and the on-off valve is arranged at the bottom opening of the corresponding media cartridge and used for controlling the on-off of the media cartridge and the process chamber.

8. The vapor deposition apparatus of any of claims 1to 3, further comprising a shield box positioned above the process chamber, the inductive coupling assembly disposed inside the shield box, the RF power supply and the matcher both disposed outside the shield box.

9. A vapor deposition apparatus according to any of claims 1to 3, wherein the media cartridge has a diameter in the range of 50mm to 100mm, and/or a height in the range of 100mm to 300mm, and/or a gap between the media cartridge and the rf coil in the range of 1mm to 10 mm.

10. A cleaning method of a vapor deposition apparatus, characterized in that the vapor deposition apparatus is the vapor deposition apparatus of any one of claims 1to 9, the cleaning method comprising: