CN112397370B - Upper electrode assembly and semiconductor process equipment - Google Patents
Upper electrode assembly and semiconductor process equipment Download PDFInfo
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- CN112397370B CN112397370B CN202011280862.6A CN202011280862A CN112397370B CN 112397370 B CN112397370 B CN 112397370B CN 202011280862 A CN202011280862 A CN 202011280862A CN 112397370 B CN112397370 B CN 112397370B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title abstract description 12
- 230000008569 process Effects 0.000 title abstract description 12
- 238000009434 installation Methods 0.000 claims abstract description 30
- 238000004891 communication Methods 0.000 claims abstract description 19
- 238000012545 processing Methods 0.000 claims description 17
- 238000003780 insertion Methods 0.000 claims description 12
- 230000037431 insertion Effects 0.000 claims description 12
- 230000013011 mating Effects 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 10
- 238000010168 coupling process Methods 0.000 abstract description 10
- 238000005859 coupling reaction Methods 0.000 abstract description 10
- 208000028659 discharge Diseases 0.000 description 14
- 230000005684 electric field Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 4
- 230000001808 coupling effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses an upper electrode assembly and semiconductor process equipment. The disclosed upper electrode assembly comprises a radio frequency connecting part, coil connecting parts and a guide sleeve, wherein the guide sleeve is provided with a first end face and a second end face which are arranged in a back-to-back manner, the second end face is provided with an installation space extending towards the inside of the guide sleeve, a plurality of positioning spaces are arranged in the installation space, each coil connecting part is correspondingly arranged in one positioning space, and two adjacent coil connecting parts are arranged at intervals; the first end face is provided with a plugging channel and a communication space, the plugging channel extends to the inside of the guide sleeve and is communicated with the positioning space, the plugging channels are arranged in one-to-one correspondence with the mounting space, and the radio frequency connecting part penetrates through the plugging channel and is connected with the coil connecting part; the communicating space extends to the inside of the guide sleeve and communicates with the installation space. The scheme can reduce the risk of tip discharge in the coupling coil due to the fact that the guide sleeve is arranged.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a radio frequency wiring structure and semiconductor process equipment.
Background
In the field of processing semiconductor wafers, plasma equipment is used to perform processes such as etching, vapor deposition, etc. on the wafer using a plasma, and in a specific process, an electric field needs to be applied to a process chamber by a radio frequency system to generate the plasma. The related radio frequency system comprises a radio frequency power supply, a matcher and a coupling coil, wherein the radio frequency power supply is electrically connected with the matcher, and the matcher is communicated with the coil connecting part of the coupling coil through the radio frequency connecting part, so that the coupling coil can generate an inductive coupling effect, and further, inductively coupled plasma is generated in the process chamber so as to process the wafer.
At present, the radio frequency connecting part is usually inserted into the coil connecting part, a guide sleeve is sleeved on the coil connecting part, and the radio frequency connecting part can be aligned with the coil connecting part through a guide hole on the guide sleeve. The existence of the guide sleeve is equivalent to adding an insulating medium between two radio frequency connection parts, and the dielectric constant of the insulating medium is usually far greater than that of air, so that the introduction of the insulating medium can obviously increase the electric field intensity on the opposite sides of two adjacent coil connection parts, and further, a larger point discharge risk exists.
Disclosure of Invention
The invention discloses an upper electrode assembly and semiconductor process equipment, which are used for reducing the tip discharge risk in a coupling coil due to the arrangement of a guide sleeve.
In order to solve the problems, the invention adopts the following technical scheme:
in a first aspect, the present invention provides an upper electrode assembly for feeding radio frequency energy to semiconductor processing equipment. The upper electrode assembly comprises a radio frequency connecting part, a coil connecting part and a guide sleeve, wherein the guide sleeve is provided with a first end face and a second end face which are arranged in a back-to-back mode, an installation space extending towards the inside of the guide sleeve is formed in the second end face, a plurality of positioning spaces are formed in the installation space, each coil connecting part is correspondingly arranged in one positioning space, and two adjacent coil connecting parts are arranged at intervals;
the first end face is provided with a plugging channel and a communication space, the plugging channel extends towards the inside of the guide sleeve and is communicated with the positioning space, the plugging channels are arranged in one-to-one correspondence with the installation space, and the radio frequency connecting part penetrates through the plugging channel and is connected with the coil connecting part; the communicating space extends to the inside of the guide sleeve and is communicated with the installation space, and two adjacent inserting channels are communicated by the communicating space.
In a second aspect, the present invention provides a semiconductor processing apparatus, which includes a reaction chamber and the aforementioned upper electrode assembly, wherein the upper electrode assembly is disposed on top of the reaction chamber.
The technical scheme adopted by the invention can achieve the following beneficial effects:
in the upper electrode assembly disclosed by the invention, a plurality of positioning spaces are arranged in the installation space of the guide sleeve, so that a plurality of coil connecting parts can be arranged in the guide sleeve and can be communicated with a plurality of radio frequency connecting parts inserted into the insertion channel; simultaneously, two adjacent grafting passageway is by the intercommunication space intercommunication, based on the existence in intercommunication space, has equivalent to having reduced the insulating medium between two adjacent radio frequency connecting portions, because the dielectric constant of air is less, consequently can effectively reduce two adjacent radio frequency connecting portions relative electric field intensity, and then reduces the risk of tip discharge.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
fig. 1 is a schematic structural diagram of a radio frequency connection structure according to an embodiment of the present invention;
FIG. 2 is an isometric view of a guide sleeve disclosed in an embodiment of the present invention;
FIG. 3 is a cross-sectional view of a guide sleeve according to an embodiment of the present invention;
fig. 4 and fig. 5 are schematic structural views of a guide sleeve according to an embodiment of the present invention in two views, i.e., a top view and a bottom view;
reference numerals illustrate:
100-radio frequency connection part,
200-coil connection portion, 210-slot,
300-guiding sleeve, 310-first end face, 320-second end face, 330-installation space, 340-safety clearance, 350-plug-in channel, 351-inner chamfer, 360-positioning part, 361-positioning surface, 370-positioning space and 380-communication space.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The technical scheme disclosed by each embodiment of the invention is described in detail below with reference to the accompanying drawings.
Referring to fig. 1-5, an embodiment of the present invention discloses an upper electrode assembly for feeding rf energy to semiconductor processing equipment. It should be appreciated that in the field of semiconductor fabrication technology, a plasma is required for processing semiconductor materials (e.g., wafers), and the generation of the plasma requires the use of an upper electrode assembly. Of course, the embodiment is not limited to the specific type of semiconductor processing equipment to which the upper electrode assembly is applied, and may be used in, for example, plasma etching, physical vapor deposition, chemical vapor deposition, micro-electro-mechanical systems, and other processing equipment.
The upper electrode assembly disclosed in this embodiment includes a radio frequency connection part 100, a coil connection part 200, and a guide sleeve 300.
In the related rf system, the rf power source is electrically connected to the matcher, and the matcher is electrically connected to the coil connection portion 200 of the coupling coil through the rf connection portion 100, so that the coupling coil can generate an inductive coupling effect. In general, the rf connection part 100 and the coil connection part 200 are plural, and in order to facilitate the connection between the plural rf connection parts 100 and the plural coil connection parts 200, it is necessary to perform constraint guidance by the guide sleeve 300.
In this embodiment, the guide sleeve 300 has a first end surface 310 and a second end surface 320 disposed opposite to each other, and the second end surface 320 is provided with a mounting space 330 extending toward the inside of the guide sleeve 300, and the mounting space 330 is a receiving area of the coil connecting portion 200. Specifically, a plurality of positioning spaces 370 are disposed in the mounting space 330 in this embodiment, and the positioning spaces 370 are receiving areas of the coil connecting portions 200, and can also be positioned and matched with the coil connecting portions 200 to achieve quick mounting in place, wherein each coil connecting portion 200 is correspondingly disposed in one positioning space 370.
Because there is a gap between different turns of the coupling coil, two adjacent coil connecting portions 200 are also arranged at intervals, at this time, air between two adjacent coil connecting portions 200 is increased, the dielectric constant of air is smaller, and the risk of tip discharge between the coil connecting portions 200 can be certainly reduced.
In order to realize the constraining and guiding function of the guide sleeve 300 on the radio frequency connection part 100, the guide sleeve 300 of the embodiment is provided with a plugging channel 350 at the first end surface 310, and the plugging channel 350 extends to the interior of the guide sleeve 300 and is communicated with the positioning space 370, so that the radio frequency connection part 100 can be penetrated in the plugging channel 350 and is connected with the coil connection part 200 in the positioning space 370 to realize conduction; of course, the dimensions of the mating channels 350 and the rf connection 100 generally match one another. In addition, the guide sleeve is made of an insulating material, and can be made of a resin material. Meanwhile, the plugging channels 350 and the positioning spaces 370 are arranged in a one-to-one correspondence, that is, the number of the plugging channels 350 and the number of the positioning spaces 370 are the same, and it can be known that each radio frequency connection part 100 can be penetrated through the corresponding plugging channel 350 and be communicated with one coil connection part 200 in the positioning space 370 by combining with the corresponding arrangement of each coil connection part 200 in the positioning space 370.
In the related art, each set of the rf connection part 100 and the coil connection part 200 needs to be provided with one guide sleeve 300 to restrict the guiding, the number of the guide sleeves 300 is definitely larger, and the presence of more guide sleeves 300 between the rf connection parts 100 can result in too much insulating medium between the rf connection parts 100, thereby increasing the electric field intensity on opposite sides of the adjacent two coil connection parts 200, and thus there is a larger risk of tip discharge. As described above, in the present embodiment, the guide sleeve 300 may be provided with multiple sets of conductive rf connection parts 100 and coil connection parts 200, and the upper electrode assembly has a better integration level, and based on the installation space 330 in the guide sleeve 300, the insulating medium between the coil connection parts 200 can be certainly reduced, so as to reduce the risk of tip discharge inside the upper electrode assembly.
Meanwhile, in order to further reduce the risk of tip discharge between the rf connection portions 100, the first end surface 310 of the embodiment is further provided with a communication space, the communication space extends toward the inside of the guide sleeve 300 and is communicated with the installation space 330, that is, the guide sleeve 300 is penetrated by the communication space and the installation space 330 in the direction from the first end surface 310 to the second end surface 320, so as to reduce the insulation medium between each group of rf connection portions 100 and the coil connection portions 200, and the adjacent two plugging channels 350 are communicated by the communication space, so that the rf connection portions 100 are partially exposed in the communication space, further reducing the insulation medium between the rf connection portions 100, reducing the risk of tip discharge between the adjacent two rf connection portions 100, and optimizing the safety performance of the upper electrode assembly.
The specific number of the rf connection parts 100 and the coil connection parts 200 disposed in the guide sleeve 300 is not limited in this embodiment, and since the coupling coil is usually adjacent to two turns, the rf connection parts 100 and the coil connection parts 200 may be disposed in one guide sleeve 300 of this embodiment, and the guide sleeve 300 forms two insertion channels 350 therein, in other words, two sets of the rf connection parts 100 and the coil connection parts 200 may be disposed in the guide sleeve 300, and one rf connection part 100 may extend into the positioning space 370 through one insertion channel 350 and be connected with the corresponding coil connection part 200. Of course, the radio frequency connection part 100 and the coil connection part 200 disposed in the guide sleeve 300 may be provided in such numbers as three, four, etc.
As can be seen from the above description, in the upper electrode assembly according to the embodiment of the present invention, the installation space 330 of the guide sleeve 300 is provided with the plurality of positioning spaces 370, so that the plurality of coil connecting portions 200 can be disposed in the guide sleeve 300, and the plurality of coil connecting portions 200 can be electrically connected with the plurality of rf connecting portions 100 inserted into the insertion channels 350; meanwhile, the two adjacent plugging channels 350 are communicated by the communication space, and the insulating medium between the two adjacent radio frequency connection parts 100 is reduced based on the existence of the communication space, and the dielectric constant of air is smaller, so that the relative electric field intensity of the two adjacent radio frequency connection parts 100 can be effectively reduced, and the risk of tip discharge is further reduced.
In the related art, the guide sleeve 300 is provided with a mounting groove, the coil connecting portion 200 can be directly arranged in the mounting groove, but in the mounting space 330 of the embodiment, since a plurality of coil connecting portions 200 are required to be arranged, in order to enable the plurality of coil connecting portions 200 to be stably arranged in the mounting space 330, the mounting space 330 of the embodiment can be internally provided with a positioning portion 360, two adjacent inserting channels 350 are both provided with a positioning portion 360, the outer side surface of the positioning portion 360 and the inner side surface of the guide sleeve 300 jointly form a positioning space 370, the positioning space 370 is matched with the coil connecting portions 200, and the coil connecting portions 200 can be inserted and matched in the positioning space 370.
It should be understood that, when the coil connecting portion 200 is inserted into the positioning space 370, a portion of the outer side surface of the coil connecting portion 200 may abut against the inner side surface of the guide sleeve 300, and another portion of the outer side surface of the coil connecting portion 200 may abut against the positioning portion 360, and the coil connecting portion 200 is limited around the entire periphery under the combined action of the inner side surface of the guide sleeve 300 and the positioning portion 360, so as to ensure that the coil connecting portion 200 is stably engaged in the positioning space 370.
Meanwhile, in order to avoid the positioning portion 360 occupying the space between the excessive coil connecting portions 200, the communication space of the present embodiment may communicate with the installation space 330 through the positioning portion 360. Under such setting, both realized spacing to coil connecting portion 200 through location portion 360, and because of the reason that the intercommunication space link up location portion 360 makes the space that location portion 360 occupy as far as possible in installation space 330 reduce, and then makes the insulating medium between the coil connecting portion 200 reduce to reduce the inside tip discharge risk of this upper electrode subassembly.
The positioning portion 360 is generally in the shape of a block, but may be a structural member having other shapes such as a sheet.
In the present embodiment, the specific installation position of the positioning portion 360 in the installation space 330 is not limited, for example, the positioning portion 360 is disposed on the inner side surface of the guide sleeve 300 and is spaced apart from the inner bottom surface of the installation space 330. In another specific embodiment, the positioning part 360 may be disposed on the inner bottom surface of the installation space 330. Because the guide sleeve 300 needs to be hollowed out when the installation space 330 is provided during the processing of the guide sleeve 300, the positioning part 360 of the embodiment is arranged on the inner bottom surface of the installation space 330, so that the positioning part 360 is avoided during the hollowed out processing, the processing requirement on the processing technology is lower, and the processing cost is lower.
In the embodiment in which the positioning portion 360 is disposed on the inner side surface of the guide sleeve 300 and the positioning portion 360 is spaced from the inner bottom surface of the installation space 330, the entire installation space 330 needs to be hollowed out during processing, and then the positioning portion 360 is disposed on the inner side surface of the guide sleeve 300, so that the processing process becomes complicated and the processing cost is wasted. Of course, in the embodiment in which the positioning portion 360 is provided on the inner bottom surface of the installation space 330 in this embodiment, the positioning portion 360 is generally integrally formed with the inner side surface of the guide bush 300 at the same time.
Because the two adjacent plugging channels 350 are connected by the connecting space, in order to prevent the rf connection portion 100 from moving into the connecting space from the plugging channel 350, the width of the connecting space in this embodiment needs to be smaller than the caliber of the plugging channel 350, and the size of the rf connection portion 100 is generally matched with the caliber of the plugging channel 350, so that the size of the rf connection portion 100 is larger than the width of the connecting space, and when the rf connection portion 100 is plugged into the plugging channel 350, the rf connection portion 100 will not move into the connecting space, thereby ensuring the installation stability of the rf connection portion in the plugging channel 350.
In this embodiment, the configuration of the mating channel 350 is varied and it is required to match the shape of the rf connector 100. The rf connection 100 is generally cylindrical, and accordingly, the plugging channel 350 is a circular hole; in other embodiments, the rf connection 100 may be prismatic, and accordingly, the mating channel 350 may be a square hole.
In a specific embodiment, the plugging channel 350 is a circular hole, and the width of the communication space may be half the diameter of the plugging channel 350. With this arrangement, the space occupied by the communication space on the guide sleeve 300 is relatively suitable, so that not only is the guide sleeve 300 ensured to have a certain strength, but also the radio frequency connection part 100 cannot move into the communication space, and the plugging channel 350 is ensured to have a guiding function.
In order to ensure connection reliability of the rf connection part 100 and the coil connection part 200, the rf connection part 100 and the coil connection part 200 of the present embodiment may be in plug-in fit. Of course, the specific matching manner between the rf connection part 100 and the coil connection part 200 is not limited in this embodiment, and for example, the two may be matched with each other by a buckle. The assembly of the connection mode of the plugging and matching is more convenient, the assembly efficiency of the radio frequency connection part 100 and the coil connection part 200 can be improved undoubtedly, meanwhile, the radio frequency connection part 100 and the coil connection part 200 can be mutually limited to ensure that no dislocation occurs between the radio frequency connection part 100 and the coil connection part 200, so that the connection reliability of the radio frequency connection part and the coil connection part is optimized, and further, the coupling coil of the upper electrode assembly is ensured to smoothly produce an inductive coupling effect.
Since the rf connection part 100 is generally required to be plugged into the installation space 330 through the plugging channel 350, the end of the coil connection part 200 facing the rf connection part 100 of the present embodiment may be provided with a slot 210, and the rf connection part 100 may be plugged into the slot 210. It should be understood that, after the coil connecting portion 200 is disposed in the positioning space 370, the slot 210 is opposite to the inserting channel 350, so that when the rf connecting portion 100 is inserted into the inserting channel 350, the alignment of the rf connecting portion 100 and the slot 210 is ensured, and the rf connecting portion 100 can be smoothly inserted into the slot 210 to achieve the conduction with the coil connecting portion 200.
Of course, the specific plugging-fit relationship between the rf connection portion 100 and the coil connection portion 200 is not limited in this embodiment, and in another embodiment, an end of the rf connection portion 100 facing the coil connection portion 200 may be provided with a slot 210, and the coil connection portion 200 may be plugged-fitted into the slot 210.
To facilitate the smooth insertion of the rf connection 100 into the insertion channel 350, the insertion channel 350 of the present embodiment may be provided with an inner chamfer 351 on a side near the first end surface 310. It should be appreciated that due to the beveled nature of the inner chamfer 351, it is of course of greater opening size at the end connected to the first end face 310, which may facilitate smooth insertion of the rf connector 100 into the insertion channel 350; even when the rf connection 100 is mated with the inner chamfer 351, the inner chamfer 351 will act as a guide for the rf connection 100, ensuring that the rf connection 100 slides into the mating channel 350.
In order to further reduce the risk of tip discharge inside the upper electrode assembly, as shown in fig. 3, in the present embodiment, the corners between the inner chamfer 351 and the first end surface 310, between the inner chamfer 351 and the inner side surface of the mating channel 350, between the inner side surface of the mating channel 350 and the inner bottom surface of the installation space 330, and on the outer wall of the guide sleeve 300 may be transited by rounded corners. It will be appreciated that in the tip discharge effect, the sharper the "tip" of the conductor, the smaller the curvature, the higher the surface charge density, and the stronger the field strength in its vicinity, which in turn results in a more pronounced tip discharge effect; in this embodiment, the curvature of the inner corner (i.e., the "tip") of the guide sleeve 300 can be effectively reduced due to the rounded corner structure, so that the surface charge density is reduced, and the point discharge effect is further reduced when the field intensity is also reduced in the vicinity, thereby ensuring excellent safety performance of the upper electrode assembly.
Based on the above-mentioned upper electrode assembly, the embodiment of the invention also discloses a semiconductor process device, which comprises a reaction chamber and the above-mentioned upper electrode assembly, wherein the upper electrode assembly is usually arranged on the top of the reaction chamber. The specific type of reaction chamber is not limited in this embodiment, and may be a plasma etching chamber, a physical vapor deposition chamber, or the like.
The foregoing embodiments of the present invention mainly describe differences between the embodiments, and as long as there is no contradiction between different optimization features of the embodiments, the embodiments may be combined to form a better embodiment, and in view of brevity of line text, no further description is provided herein.
The foregoing is merely exemplary of the present invention and is not intended to limit the present invention. Various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are to be included in the scope of the claims of the present invention.
Claims (10)
1. An upper electrode assembly for feeding rf energy to semiconductor processing equipment, the upper electrode assembly comprising:
the coil connecting part (200) is correspondingly arranged in one positioning space (370), and two adjacent coil connecting parts (200) are arranged at intervals;
the first end face (310) is provided with a plugging channel (350) and a communication space (380), the plugging channel (350) extends towards the inside of the guide sleeve (300) and is communicated with the positioning space (370), the plugging channel (350) and the positioning space (370) are arranged in a one-to-one correspondence, and the radio frequency connecting part (100) penetrates through the plugging channel (350) and is connected with the coil connecting part (200); the communication space (380) extends to the inside of the guide sleeve (300) and is communicated with the installation space (330), and two adjacent plug channels (350) are communicated by the communication space (380).
2. The upper electrode assembly according to claim 1, wherein a positioning portion (360) is provided in the installation space (330), the positioning portion (360) is provided between two adjacent plugging channels (350), and the communication space (380) penetrates the positioning portion (360) to communicate with the installation space (330); the outer side surface of the positioning part (360) and the inner side surface of the guide sleeve (300) jointly form the positioning space (370), the positioning space (370) is matched with the coil connecting part (200), and the coil connecting part (200) can be spliced and matched with the positioning space (370).
3. The upper electrode assembly according to claim 2, wherein the positioning portion (360) is provided on an inner bottom surface of the mounting space (330).
4. The upper electrode assembly according to claim 1, wherein the plugging channel (350) is provided with an inner chamfer (351) on a side near the first end face (310).
5. The upper electrode assembly of claim 4, wherein a rounded transition is provided between the inner chamfer (351) and the first end face (310), between the inner chamfer (351) and an inner side of the mating channel (350), and between an inner side of the mating channel (350) and an inner bottom surface of the mounting space (330).
6. The upper electrode assembly according to claim 1, wherein the insertion passage (350) is a circular hole, and the width dimension of the communication space (380) is half the diameter of the insertion passage (350).
7. The upper electrode assembly according to claim 1, wherein in one of the guide sleeves (300), the radio frequency connection part (100) and the coil connection part (200) are two, and the guide sleeve (300) forms two of the insertion passages (350) inside thereof.
8. The upper electrode assembly according to any one of claims 1 to 7, wherein the radio frequency connection (100) is a plug-in fit with the coil connection (200).
9. The upper electrode assembly according to claim 8, wherein an end of the coil connection part (200) facing the radio frequency connection part (100) is provided with a slot (210), and the radio frequency connection part (100) is insertably fitted to the slot (210).
10. A semiconductor processing apparatus comprising a reaction chamber and the upper electrode assembly of any one of claims 1 to 9 disposed on top of the reaction chamber.
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| CN112397370B true CN112397370B (en) | 2023-12-22 |
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| CN211700185U (en) * | 2020-03-26 | 2020-10-16 | 北京北方华创微电子装备有限公司 | Upper electrode mechanism and semiconductor processing equipment |
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| CN111326387B (en) * | 2018-12-17 | 2023-04-21 | 中微半导体设备(上海)股份有限公司 | Capacitively coupled plasma etching equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110706993A (en) * | 2018-07-10 | 2020-01-17 | 北京北方华创微电子装备有限公司 | Inductive coupling device and semiconductor processing equipment |
| CN110894595A (en) * | 2018-09-13 | 2020-03-20 | 北京北方华创微电子装备有限公司 | Vapor deposition apparatus and cleaning method thereof |
| CN211700185U (en) * | 2020-03-26 | 2020-10-16 | 北京北方华创微电子装备有限公司 | Upper electrode mechanism and semiconductor processing equipment |
Non-Patent Citations (1)
| Title |
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| Au/SrTiO_3/Au界面电阻翻转效应的低频噪声分析;王爱迪;刘紫玉;张培健;孟洋;李栋;赵宏武;;物理学报(第19期);全文 * |
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| CN112397370A (en) | 2021-02-23 |
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