CN112397370A - Upper electrode assembly and semiconductor process equipment - Google Patents
Upper electrode assembly and semiconductor process equipment Download PDFInfo
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- CN112397370A CN112397370A CN202011280862.6A CN202011280862A CN112397370A CN 112397370 A CN112397370 A CN 112397370A CN 202011280862 A CN202011280862 A CN 202011280862A CN 112397370 A CN112397370 A CN 112397370A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title abstract description 10
- 230000008569 process Effects 0.000 title abstract description 10
- 238000009434 installation Methods 0.000 claims abstract description 30
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- 230000037431 insertion Effects 0.000 claims description 21
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- 230000007704 transition Effects 0.000 claims 1
- 208000028659 discharge Diseases 0.000 abstract description 14
- 230000008878 coupling Effects 0.000 abstract description 12
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- 238000005859 coupling reaction Methods 0.000 abstract description 12
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Plasma Technology (AREA)
Abstract
The invention discloses an upper electrode assembly and semiconductor process equipment. The upper electrode assembly comprises radio frequency connecting parts, coil connecting parts and a guide sleeve, wherein the guide sleeve is provided with a first end surface and a second end surface which are arranged in a back-to-back manner, the second end surface is provided with an installation space extending towards the interior of the guide sleeve, a plurality of positioning spaces are arranged in the installation space, each coil connecting part is correspondingly arranged in one positioning space, and two adjacent coil connecting parts are arranged at intervals; the first end face is provided with an inserting channel and a communicating space, the inserting channel extends towards the inside of the guide sleeve and is communicated with the positioning space, the inserting channels and the mounting space are arranged in a one-to-one correspondence mode, and the radio frequency connecting part penetrates through the inserting channel and is connected with the coil connecting part; the communicating space extends towards the interior of the guide sleeve and is communicated with the mounting space. The scheme can reduce the point discharge risk in the coupling coil due to the arrangement of the guide sleeve.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a radio frequency wiring structure and semiconductor process equipment.
Background
In the field of semiconductor wafer processing, plasma equipment utilizes plasma to realize etching, vapor deposition and other processes on a wafer, and in a specific process, an electric field needs to be applied to a process chamber through a radio frequency system to generate the plasma. The related radio frequency system comprises a radio frequency power supply, a matcher and a coupling coil, wherein the radio frequency power supply is electrically connected with the matcher, and the matcher is conducted with a coil connecting part of the coupling coil through a radio frequency connecting part, so that the coupling coil can generate an inductive coupling effect to generate an inductive coupling plasma in the process chamber so as to perform process treatment on the wafer.
At present, the radio frequency connecting part is usually inserted into the coil connecting part, a guide sleeve is usually sleeved on the coil connecting part, and the radio frequency connecting part can be aligned with the coil connecting part through a guide hole in the guide sleeve. The existence of the guide sleeve is equivalent to the addition of an insulating medium between the two radio frequency connecting parts, and the dielectric constant of the insulating medium is usually much larger than that of air, so that the electric field intensity of the opposite sides of the two adjacent coil connecting parts can be remarkably increased by introducing the insulating medium, and further, a larger point discharge risk can exist.
Disclosure of Invention
The invention discloses an upper electrode assembly and semiconductor process equipment, which are used for reducing the point discharge risk caused by the arrangement of a guide sleeve in a coupling coil.
In order to solve the problems, the invention adopts the following technical scheme:
in a first aspect, the present invention provides an upper electrode assembly for feeding rf energy into semiconductor processing equipment. The upper electrode assembly comprises radio frequency connecting parts, coil connecting parts and a guide sleeve, the guide sleeve is provided with a first end face and a second end face which are arranged in an opposite mode, the second end face is provided with an installation space extending towards the interior of the guide sleeve, a plurality of positioning spaces are arranged in the installation space, each coil connecting part is correspondingly arranged in one positioning space, and two adjacent coil connecting parts are arranged at intervals;
the first end face is provided with an inserting channel and a communicating space, the inserting channel extends towards the inside of the guide sleeve and is communicated with the positioning space, the inserting channels and the mounting space are arranged in a one-to-one correspondence mode, and the radio frequency connecting part is arranged in the inserting channel in a penetrating mode and is connected with the coil connecting part; the communicating space extends towards the interior of the guide sleeve and is communicated with the mounting space, and the adjacent two inserting channels are communicated by the communicating space.
In a second aspect, the present invention provides a semiconductor processing apparatus, which includes a reaction chamber and the above-mentioned upper electrode assembly, wherein the upper electrode assembly is disposed at the top of the reaction chamber.
The technical scheme adopted by the invention can achieve the following beneficial effects:
in the upper electrode assembly disclosed by the invention, a plurality of positioning spaces are arranged in the installation space of the guide sleeve, so that a plurality of coil connecting parts can be arranged in the guide sleeve and can be communicated with a plurality of radio frequency connecting parts inserted into the insertion channel; meanwhile, two adjacent plug-in channels are communicated by a communicated space, and based on the existence of the communicated space, insulating media between two adjacent radio frequency connecting parts are reduced equivalently.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of a radio frequency connection structure disclosed in an embodiment of the present invention;
FIG. 2 is an isometric view of a guide sleeve disclosed in an embodiment of the present invention;
FIG. 3 is a cross-sectional view of a guide sleeve according to an embodiment of the present invention;
fig. 4 and fig. 5 are schematic structural diagrams of the guide sleeve according to the embodiment of the present invention from two viewing angles, i.e., a top view and a bottom view;
description of reference numerals:
100-a radio frequency connection part,
200-coil connecting part, 210-slot,
300-a guide sleeve, 310-a first end face, 320-a second end face, 330-an installation space, 340-a safety gap, 350-an insertion channel, 351-an inner chamfer, 360-a positioning part, 361-a positioning surface, 370-a positioning space and 380-a communication space.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 1-5, an embodiment of the present invention discloses an upper electrode assembly for feeding rf energy into semiconductor processing equipment. It is understood that in the field of semiconductor manufacturing, plasma is utilized when processing semiconductor materials, such as wafers, and the generation of the plasma requires the use of an upper electrode assembly. Of course, the present embodiment is not limited to the specific type of semiconductor processing equipment to which the upper electrode assembly is applied, and may be applied to, for example, plasma etching, physical vapor deposition, chemical vapor deposition, micro-electro-mechanical system, and other processing equipment.
The upper electrode assembly disclosed in this embodiment includes a radio frequency connection 100, a coil connection 200, and a guide sleeve 300.
In the related rf system, the rf power source is electrically connected to the matcher, and the matcher is conducted to the coil connecting part 200 of the coupling coil through the rf connecting part 100, so that the coupling coil can generate an inductive coupling effect. Generally, there are a plurality of rf connectors 100 and coil connectors 200, and in order to facilitate the connection relationship between the plurality of rf connectors 100 and the plurality of coil connectors 200, a guide sleeve 300 is used to perform a restraint guide.
In the present embodiment, the guide sleeve 300 has a first end surface 310 and a second end surface 320 which are opposite to each other, and the second end surface 320 is opened with a mounting space 330 extending toward the inside of the guide sleeve 300, and the mounting space 330 is a receiving area of the coil connecting portion 200. Specifically, a plurality of positioning spaces 370 are provided in the installation space 330 of the present embodiment, and the positioning spaces 370 are accommodation areas of the coil connecting portions 200, and can also be used for positioning and matching the coil connecting portions 200 to achieve quick installation in place, and each coil connecting portion 200 is correspondingly disposed in one positioning space 370.
Because gaps exist among different turns of the coupling coil, the two adjacent coil connecting parts 200 are also arranged at intervals, and at the moment, the air between the two adjacent coil connecting parts 200 is increased, the dielectric constant of the air is small, and the risk of point discharge among the coil connecting parts 200 can be reduced undoubtedly.
In order to realize the constrained guiding function of the guide sleeve 300 on the radio frequency connection portion 100, the guide sleeve 300 of the present embodiment has an insertion channel 350 on the first end surface 310 thereof, the insertion channel 350 extends to the inside of the guide sleeve 300 and is communicated with the positioning space 370, so that the radio frequency connection portion 100 can be inserted into the insertion channel 350 and is connected with the coil connection portion 200 in the positioning space 370 to realize conduction; of course, the dimensions of the docking channel 350 and the rf connection 100 are generally matched to one another. In addition, the guide sleeve is made of insulating materials, and can be made of resin materials. Meanwhile, the plugging channels 350 are disposed in one-to-one correspondence with the positioning spaces 370, that is, the plugging channels 350 are the same as the positioning spaces 370 in number, and in combination with the aforementioned corresponding disposition of each coil connection portion 200 in one positioning space 370, each rf connection portion 100 can be disposed through the corresponding plugging channel 350 and conducted with one coil connection portion 200 in the positioning space 370.
In the related art, each set of rf connection portion 100 and coil connection portion 200 needs to be provided with one guide sleeve 300 to constrain guiding, the number of guide sleeves 300 is undoubtedly large, and the presence of more guide sleeves 300 between the rf connection portions 100 may result in excessive insulating media between the rf connection portions 100, and further increase the electric field strength at the opposite sides of two adjacent coil connection portions 200, and thus there is a large risk of tip discharge. As mentioned above, in the guide sleeve 300 of the present embodiment, a plurality of sets of conductive rf connection portions 100 and coil connection portions 200 can be disposed, and the upper electrode assembly has a better integration level, and based on the existence of the installation space 330 in the guide sleeve 300, the insulating medium between the coil connection portions 200 can be undoubtedly reduced, thereby reducing the risk of the point discharge inside the upper electrode assembly.
Meanwhile, in order to further reduce the risk of the point discharge between the rf connectors 100, in the embodiment, the first end surface 310 is further provided with a communicating space, the communicating space extends toward the inside of the guide sleeve 300 and is communicated with the mounting space 330, that is, the guide sleeve 300 is communicated by the communicating space and the mounting space 330 in the direction from the first end surface 310 to the second end surface 320, so as to reduce the insulating medium between each group of the rf connectors 100 and the coil connectors 200, and the adjacent two inserting channels 350 are communicated by the communicating space, so that the rf connectors 100 are partially directly exposed in the communicating space, thereby further reducing the insulating medium between the rf connectors 100, reducing the risk of the point discharge between the adjacent two rf connectors 100, and also optimizing the safety performance of the upper electrode assembly.
The specific number of the rf connectors 100 and the coil connectors 200 disposed in the guide sleeve 300 is not limited in this embodiment, and since the coupling coil generally has two adjacent turns, the coupling coil may be disposed in one guide sleeve 300 of this embodiment, the number of the rf connectors 100 and the number of the coil connectors 200 may be two, and two insertion channels 350 are formed in the guide sleeve 300, in other words, two sets of the rf connectors 100 and the coil connectors 200 may be disposed in the guide sleeve 300, and one rf connector 100 may extend into the positioning space 370 through one insertion channel 350 and be connected to the corresponding coil connector 200. Of course, the number of the radio frequency connection parts 100 and the number of the coil connection parts 200 arranged in the guide sheath 300 may be set to three, four, etc.
As can be seen from the above description, in the upper electrode assembly disclosed in the embodiment of the present invention, the plurality of positioning spaces 370 are disposed in the installation space 330 of the guide sleeve 300, so that a plurality of coil connectors 200 can be disposed in the guide sleeve 300, and the plurality of coil connectors 200 can be conducted with the plurality of rf connectors 100 inserted into the insertion passage 350; meanwhile, two adjacent plugging channels 350 are communicated by a communicated space, so that the insulating medium between two adjacent radio frequency connecting parts 100 is reduced on the basis of the existence of the communicated space, and the electric field intensity opposite to the two adjacent radio frequency connecting parts 100 can be effectively reduced due to the fact that the dielectric constant of air is small, and the risk of point discharge is further reduced.
In the related art, the guide sleeve 300 has an installation groove, the coil connecting portion 200 can be directly installed in the installation groove, but in the installation space 330 of the present embodiment, a plurality of coil connecting portions 200 need to be installed, in order to enable the plurality of coil connecting portions 200 to be stably installed in the installation space 330, the installation space 330 of the present embodiment can be provided with the positioning portion 360, the positioning portion 360 is disposed between two adjacent inserting passages 350, the outer side surface of the positioning portion 360 and the inner side surface of the guide sleeve 300 jointly form the positioning space 370, the positioning space 370 matches with the coil connecting portion 200, and the coil connecting portion 200 can be inserted and fitted in the positioning space 370.
It should be understood that, with such an arrangement, when the coil connecting portion 200 is inserted into the positioning space 370, a part of the outer side surface of the coil connecting portion 200 will abut against the inner side surface of the guide sleeve 300, and another part of the outer side surface of the coil connecting portion 200 will abut against the positioning portion 360, and under the combined action of the inner side surface of the guide sleeve 300 and the positioning portion 360, the coil connecting portion 200 is limited around the entire periphery, so as to ensure that the coil connecting portion 200 is stably fitted in the positioning space 370.
Meanwhile, in order to avoid the positioning part 360 from occupying too much space between the coil connection parts 200, the communication space of the present embodiment may communicate with the mounting space 330 through the positioning part 360. Under such setting, both realized spacing to coil connecting portion 200 through location portion 360, and the space that makes location portion 360 occupy in installation space 330 reduces as far as possible based on the reason that the intercommunication space link up location portion 360, and then makes the insulating medium between coil connecting portion 200 reduce to reduce this inside point discharge risk of electrode assembly.
The positioning portion 360 is generally in the shape of a block, but may be a structural member having another shape such as a sheet.
In the present embodiment, the specific arrangement position of the positioning portion 360 in the installation space 330 is not limited, for example, the positioning portion 360 is arranged on the inner side surface of the guide sleeve 300 and spaced from the inner bottom surface of the installation space 330. In another specific embodiment, the positioning part 360 may be provided on an inner bottom surface of the installation space 330. Because in the processing of uide bushing 300, need to carry out the hollowing out processing to the uide bushing 300 inside when setting up installation space 330, because the location portion 360 of this embodiment sets up on the inner bottom surface of installation space 330, consequently avoid location portion 360 can when the hollowing out processing, it is lower to the requirement of processing technology during processing like this, and the processing cost is also lower.
In the embodiment that sets up location portion 360 in the medial surface of uide bushing 300, and location portion 360 and installation space 330's interior bottom surface interval distribution, need excavate whole installation space 330 earlier when processing, settle location portion 360 on the medial surface of uide bushing 300 again, so can make the course of working become loaded down with trivial details, and wasted the processing cost. Of course, in the embodiment in which the positioning part 360 is provided on the inner bottom surface of the installation space 330, the positioning part 360 is generally integrally formed with the inner side surface of the guide sleeve 300 at the same time.
Since the two adjacent plugging channels 350 are connected by the connection space, and in order to prevent the rf connection part 100 from moving into the connection space from the plugging channel 350, the width of the connection space of the embodiment needs to be smaller than the diameter of the plugging channel 350, and the size of the rf connection part 100 is usually matched with the diameter of the plugging channel 350, in such a case, the size of the rf connection part 100 is larger than the width of the connection space, and when the rf connection part 100 is plugged and fitted into the plugging channel 350, the rf connection part 100 cannot move into the connection space, thereby ensuring the installation stability of the rf connection part in the plugging channel 350.
In this embodiment, the plug channel 350 may have a variety of configurations that may be required to match the shape of the rf connection 100. Generally, the rf connector 100 has a cylindrical shape, and accordingly, the insertion channel 350 is a circular hole; in other embodiments, the rf connector 100 may have a prism shape, and accordingly, the plugging channel 350 may have a square hole.
In a specific embodiment, the insertion channel 350 is a circular hole, and the width of the communication space may be half of the diameter of the insertion channel 350. With such a configuration, the communication space occupies a proper space on the guide sleeve 300, which not only ensures that the guide sleeve 300 has a certain strength, but also ensures that the rf connector 100 does not move into the communication space and ensures that the plugging channel 350 has a guiding function.
In order to ensure the connection reliability of the radio frequency connection part 100 and the coil connection part 200, the radio frequency connection part 100 and the coil connection part 200 of the present embodiment may be plugged and matched. Of course, the present embodiment does not limit the specific matching manner between the radio frequency connection portion 100 and the coil connection portion 200, for example, the two may be matched with each other by a snap. The connection mode of the insertion fit is convenient to assemble, the assembly efficiency of the radio frequency connection part 100 and the coil connection part 200 can be improved undoubtedly, meanwhile, the radio frequency connection part 100 and the coil connection part 200 can be limited mutually to ensure that the two parts are not staggered, so that the connection reliability of the two parts is optimized, and further, the coupling coil of the upper electrode assembly is ensured to generate an inductive coupling effect smoothly.
Since it is usually necessary to insert the rf connector 100 into the installation space 330 through the insertion channel 350, the coil connector 200 of the present embodiment may be provided with a slot 210 at an end facing the rf connector 100, and the rf connector 100 may be inserted and fitted into the slot 210. It should be understood that, after the coil connecting portion 200 is disposed in the positioning space 370, the slot 210 is opposite to the inserting channel 350, so that when the rf connecting portion 100 is inserted into the inserting channel 350, it is ensured that the rf connecting portion 100 is aligned with the slot 210, and the rf connecting portion 100 can be smoothly inserted into the slot 210 to achieve conduction with the coil connecting portion 200.
Of course, the embodiment does not limit the specific insertion and mating relationship between the radio frequency connection portion 100 and the coil connection portion 200, and in another embodiment, the end of the radio frequency connection portion 100 facing the coil connection portion 200 may be provided with a slot 210, and the coil connection portion 200 may be inserted and mated with the slot 210.
In order to facilitate the rf connector 100 to be smoothly inserted into the insertion channel 350, the insertion channel 350 of the present embodiment may be provided with an inner chamfer 351 at a side close to the first end surface 310. It should be understood that, due to the inclined surface of the inner chamfer 351, the end connected to the first end surface 310 has a larger opening size, which facilitates the smooth insertion of the rf connector 100 into the insertion channel 350; even if the rf connector 100 abuts against the inner chamfer 351 during the plugging and mating, the inner chamfer 351 will guide the rf connector 100 and ensure that the rf connector 100 slides into the plugging channel 350.
In order to further reduce the risk of tip discharge inside the upper electrode assembly, as shown in fig. 3, in the present embodiment, corners between the inner chamfer 351 and the first end surface 310, between the inner chamfer 351 and the inner side surface of the plug channel 350, between the inner side surface of the plug channel 350 and the inner bottom surface of the mounting space 330, and on the outer wall of the guide sleeve 300 may be rounded. It should be understood that in the point discharge effect, the sharper the "tip" of the conductor, the smaller the curvature, the higher the surface charge density, and the stronger the field strength in the vicinity thereof, thereby leading to the more significant point discharge effect; in this embodiment, due to the existence of the fillet structure, the curvature of the inner corner (i.e., "tip") of the guide sleeve 300 can be effectively reduced, so that the surface charge density is reduced, and the tip discharge effect is further reduced under the condition that the field strength nearby is also reduced, thereby ensuring that the upper electrode assembly has excellent safety performance.
Based on the above upper electrode assembly, an embodiment of the present invention further discloses a semiconductor processing apparatus, which includes a reaction chamber and the above upper electrode assembly, wherein the upper electrode assembly is usually disposed on the top of the reaction chamber. The present embodiment is not limited to a specific type of reaction chamber, and may be a plasma etching chamber, a physical vapor deposition chamber, or the like.
In the above embodiments of the present invention, the difference between the embodiments is mainly described, and different optimization features between the embodiments can be combined to form a better embodiment as long as they are not contradictory, and further description is omitted here in view of brevity of the text.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (10)
1. An upper electrode assembly for feeding rf energy into semiconductor processing equipment, said upper electrode assembly comprising:
the coil connecting structure comprises a radio frequency connecting part (100), coil connecting parts (200) and a guide sleeve (300), wherein the guide sleeve (300) is provided with a first end face (310) and a second end face (320) which are arranged in a reverse mode, the second end face (320) is provided with an installation space (330) which extends towards the interior of the guide sleeve (300), a plurality of positioning spaces (370) are arranged in the installation space (330), each coil connecting part (200) is correspondingly arranged in one positioning space (370), and two adjacent coil connecting parts (200) are arranged at intervals;
the first end face (310) is provided with an inserting channel (350) and a communicating space (380), the inserting channel (350) extends towards the inside of the guide sleeve (300) and is communicated with the positioning space (370), the inserting channel (350) and the positioning space (370) are arranged in a one-to-one correspondence mode, and the radio frequency connecting part (100) penetrates through the inserting channel (350) and is connected with the coil connecting part (200); the communication space (380) extends towards the interior of the guide sleeve (300) and is communicated with the installation space (330), and two adjacent plug-in channels (350) are communicated by the communication space (380).
2. The upper electrode assembly according to claim 1, wherein a positioning portion (360) is provided in the mounting space (330), the positioning portion (360) is provided between each two adjacent plug channels (350), and the communication space (380) communicates with the mounting space (330) by passing through the positioning portion (360); the outer side surface of the positioning part (360) and the inner side surface of the guide sleeve (300) jointly form the positioning space (370), the positioning space (370) is matched with the coil connecting part (200), and the coil connecting part (200) can be in plug-in fit with the positioning space (370).
3. The upper electrode assembly according to claim 2, wherein the positioning part (360) is provided on an inner bottom surface of the installation space (330).
4. An upper electrode assembly according to claim 1, characterized in that the plug channel (350) is provided with an inner chamfer (351) at a side close to the first end face (310).
5. An upper electrode assembly according to claim 4, characterized in that rounded transitions are provided between the inner chamfer (351) and the first end surface (310), between the inner chamfer (351) and an inner side surface of the plug channel (350), and between the inner side surface of the plug channel (350) and an inner bottom surface of the mounting space (330).
6. The upper electrode assembly according to claim 1, wherein the insertion passage (350) is a circular hole, and the width dimension of the communication space (380) is half of the diameter of the insertion passage (350).
7. The upper electrode assembly according to claim 1, wherein the radio frequency connection portion (100) and the coil connection portion (200) are both two in one guide sleeve (300), and the guide sleeve (300) forms two insertion passages (350) in the inside thereof.
8. An upper electrode assembly according to any of claims 1-9, characterized in that the radio frequency connection (100) is plug-fit with the coil connection (200).
9. The upper electrode assembly according to claim 8, wherein an end of the coil connecting portion (200) facing the radio frequency connecting portion (100) is provided with a slot (210), and the radio frequency connecting portion (100) is plug-fittingly fitted into the slot (210).
10. A semiconductor processing apparatus comprising a reaction chamber and the upper electrode assembly of any one of claims 1 to 9, the upper electrode assembly being disposed at a top of the reaction chamber.
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| CN202011280862.6A CN112397370B (en) | 2020-11-16 | 2020-11-16 | Upper electrode assembly and semiconductor process equipment |
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| CN202011280862.6A CN112397370B (en) | 2020-11-16 | 2020-11-16 | Upper electrode assembly and semiconductor process equipment |
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| CN112397370B CN112397370B (en) | 2023-12-22 |
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| CN110706993A (en) * | 2018-07-10 | 2020-01-17 | 北京北方华创微电子装备有限公司 | Inductive coupling device and semiconductor processing equipment |
| CN110894595A (en) * | 2018-09-13 | 2020-03-20 | 北京北方华创微电子装备有限公司 | Vapor deposition apparatus and cleaning method thereof |
| US20200194275A1 (en) * | 2018-12-17 | 2020-06-18 | Advanced Micro-Fabrication Equipment Inc. China | Capacitively Coupled Plasma Etching Apparatus |
| CN211700185U (en) * | 2020-03-26 | 2020-10-16 | 北京北方华创微电子装备有限公司 | Upper electrode mechanism and semiconductor processing equipment |
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2020
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| CN110706993A (en) * | 2018-07-10 | 2020-01-17 | 北京北方华创微电子装备有限公司 | Inductive coupling device and semiconductor processing equipment |
| CN110894595A (en) * | 2018-09-13 | 2020-03-20 | 北京北方华创微电子装备有限公司 | Vapor deposition apparatus and cleaning method thereof |
| US20200194275A1 (en) * | 2018-12-17 | 2020-06-18 | Advanced Micro-Fabrication Equipment Inc. China | Capacitively Coupled Plasma Etching Apparatus |
| CN211700185U (en) * | 2020-03-26 | 2020-10-16 | 北京北方华创微电子装备有限公司 | Upper electrode mechanism and semiconductor processing equipment |
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| 王爱迪;刘紫玉;张培健;孟洋;李栋;赵宏武;: "Au/SrTiO_3/Au界面电阻翻转效应的低频噪声分析", 物理学报, no. 19 * |
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| CN112397370B (en) | 2023-12-22 |
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