CN102945783A - Gas filling device and plasma processing equipment - Google Patents
Gas filling device and plasma processing equipment Download PDFInfo
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- CN102945783A CN102945783A CN 201210452617 CN201210452617A CN102945783A CN 102945783 A CN102945783 A CN 102945783A CN 201210452617 CN201210452617 CN 201210452617 CN 201210452617 A CN201210452617 A CN 201210452617A CN 102945783 A CN102945783 A CN 102945783A
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Abstract
The invention provides a gas filling device and plasma processing equipment. The gas filling device comprises a nozzle and a cover plate, wherein the nozzle is provided with a first passage and a nozzle bypass communicated with the first passage; the cover plate is provided with a groove and a plurality of second passages; the groove is basically positioned at the center position of the cover plate; the second passages are uniformly distributed in the cover plate around the central line of the groove; the nozzle is embedded in the groove; an air outlet end of the first passage extends out of the cover plate from the bottom of the groove; air inlet ends of the second passages are communicated with the nozzle bypass; and the second passages are formed into a multi-layer structure. Uniform air flow distribution can be obtained on the whole surface of a processed wafer by the gas filling device and the plasma processing equipment, so that the phenomenon of etching or uneven deposition caused by uneven air distribution from the upside center of the surface of the wafer to the edge can be effectively avoided, and the etching or deposition rates of each point on the surface of the whole wafer are more approximate.
Description
Technical field
The present invention relates to the plasma process technical field, particularly a kind of gas input device and plasma processing device.
Background technology
In the manufacture process of integrated circuit, solar cell, usually need to use plasma processing device the semiconductor wafers such as monocrystalline silicon to be carried out the processing technologys such as thin film deposition, etching.And in plasma processing device, gas input device normally provides required process gas for the processing of semiconductor wafer, also can be under specific circumstances or required assist gas is provided during plant maintenance.
At present, extensive use plasma processing device in the manufacturing process of integrated circuit or MEMS device.For example, inductance coupled plasma device is used in dry etching (Dry Etching) or chemical vapour deposition (CVD) (CVD) technique usually, its principle is: during processing semiconductor wafer, gas input device is inputted process gas in reaction chamber, process gas is under the exciting of radio-frequency power, produce ionization and form plasma, plasma is comprised of charged electronics and ion, process gas in the reaction chamber is under the bump of electronics, except being transformed into ion, can also absorbed energy and form a large amount of active groups, energy of electromagnetic field coupling by radio-frequency power supply, process gas is excited into plasma state, thereby the semiconductor wafer surface in the reaction chamber is carried out corresponding material etching or deposition, and the product of etching or deposition reaction and residual gas break away from semiconductor wafer surface, and by vacuum system extraction chamber.
For example, Fig. 1 is the structural representation of present a kind of inductance coupled plasma device of commonly using, process gas enters reaction chamber 3 by pipeline by the nozzle 2 that is fixed on the quartzy cover plate 1, under the exciting of the coil 4 that has applied radio-frequency power supply, process gas ionization forms plasma (Plasma) 5, plasma 5 is under the driving of bias voltage, the wafer (Wafer) 7 that is adsorbed on the electrostatic chuck 6 is carried out thin film deposition or etching reaction, and the product of reaction and residual gas detach reaction chamber 3 by molecular pump (Turbo Pump) 8.
Above-mentioned inductance coupled plasma device is taked the mode of reaction chamber 3 central upper portion air inlets, although nozzle 2 can be provided with a plurality of air inlets, yet problem is, nozzle 2 is fixedly mounted on the center of quartzy cover plate, after process gas enters reaction chamber 3, the difference of the air flow path length from wafer 7 centers to the edge, can cause wafer 7 lip-deep airflow fields to form gradient from the center to the edge distributes, so that process gas is higher in wafer 7 centre concentration, lower in edge concentration, whole wafer 7 surface air-flow skewness, impact is to the crudy of semiconductor wafer 3.
Formed by process gas ionization owing to participate in the plasma of reaction, the heterogeneity that said flow distributes will cause the etching of whole wafer surface or speed and the uniformity of deposition that very large difference is arranged, thereby affect the yields of wafer process.And along with the development of technology, the size of wafer progressively increases, and the difference that the air-flow of its centerand edge distributes will further increase.
Summary of the invention
The problem that the present invention solves is how to obtain more uniform air-flow in the whole surface of handled wafer to distribute.
For addressing the above problem, the invention provides a kind of gas input device and plasma processing device, wherein said gas input device comprises:
Nozzle, described nozzle has first passage, and the nozzle bypass that is communicated with described first passage;
Cover plate has groove and a plurality of second channel in the described cover plate, described recess-based originally is positioned at the center of cover plate, and described a plurality of second channels evenly distribute in cover plate around the center line of groove; Wherein,
Described nozzle embeds in the described groove, and cover plate is stretched out by the bottom of groove in the outlet side of described first passage, and the inlet end of described a plurality of second channels is connected with described nozzle bypass.
The inlet end of described a plurality of second channels is positioned at described groove inwall, the outlet side take the cover plate center as symmetric points are uniformly distributed in described cover plate away from the one side of first passage inlet end.
Described a plurality of second channel is distributed as umbrella shape in cover plate.
Described second channel is straight hole, and then the angle of the axis of this second channel and cover plate center line is acute angle.
Described nozzle bypass is a plurality of through holes, and described a plurality of through holes evenly distribute and towards the inlet end of described a plurality of second channels around described first passage axis.
Leave the gap between described nozzle and the groove and consist of gas flow distribution cavity, described gas flow distribution cavity is communicated with described nozzle bypass and second channel.
Described gas flow distribution cavity is annular.
The outlet side of described first passage is straight hole, bellmouth orifice, seedpod of the lotus head hole or sieve-like hole.
Described nozzle and groove are tightly connected.
Described plasma processing device comprises reaction chamber and gas input device, and described gas input device comprises:
Nozzle, described nozzle has first passage, and the nozzle bypass that is communicated with described first passage;
Cover plate with described reaction chamber sealing, has groove and a plurality of second channel in the described cover plate, described recess-based originally is positioned at the center of cover plate, and described a plurality of second channels evenly distribute in cover plate around the center line of groove; Wherein,
Described nozzle embeds in the described groove, and cover plate is stretched out by the bottom of groove in the outlet side of described first passage, and the inlet end of described a plurality of second channels is connected with described nozzle bypass, and its outlet side is towards described reaction chamber.
Technique scheme has the following advantages:
In described gas input device and plasma processing device, process gas is flowed into by the inlet end of the first passage of nozzle, then be divided into two parts air-flow, part air-flow enters reaction chamber via the outlet side of first passage, another part air-flow flows into described second channel via the nozzle bypass, outlet side by second channel enters reaction chamber, because described a plurality of second channels evenly distribute in cover plate around the center line of groove, so, the outlet side of described first passage is as the central air induction mouth, and the outlet side of second channel is as the edge air inlet, compare the structure that the central air induction mouth is only arranged in the conventional art, the edge air inlet can be adjusted and enter the gas flow in the process area on the Waffer edge surface, so that have more uniformly process gas pressure and flow distribution to the edge in the wafer surface top center, thereby obtaining more uniform air-flow in the whole surface of wafer distributes, and then can effectively avoid the etching that causes to the edge gas skewness in the wafer surface top center or deposition non-uniform phenomenon, so that the etching of each point or deposition rate are more close on whole wafer surface.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on illustrating purport of the present invention.
Fig. 1 is the structural representation of a kind of inductance coupled plasma device commonly used;
Fig. 2 is the structural representation of inductively coupled plasma equipment in the embodiment of the invention;
Fig. 3 is the cutaway view of the cover plate of gas input device among Fig. 2;
Fig. 4 is the upward view of Fig. 3 cover plate;
Fig. 5 is the vertical view of Fig. 3 cover plate;
Fig. 6 is the structural representation of another cover plate in the embodiment of the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Set forth in the following description a lot of details so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the profile of indication device structure can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Development along with semicon industries such as integrated circuit, solar cells, size as the semiconductor wafer of substrate progressively increases, critical size constantly reduces, these cause the volume of the reaction chamber of processing semiconductor wafer also to increase accordingly, airflow homogeneity to wafer surface requires also more and more higher, need to be in a larger space, on a larger surface, obtaining more uniformly, air-flow distributes.
The inventor studies discovery, the gas input device of traditional plasma processing device, owing to only be provided with the central air induction hole, enter behind the reaction chamber process gas wafer surface central authorities to around distribution inconsistent, cause the reactive group that forms in the plasma and the chemical reaction velocity that the substance to be processed surface occurs to differ greatly, finally cause central authorities and the inhomogeneities of etching or deposition rate on every side.Can improve semiconductor wafer surface air-flow phenomenon pockety although utilize the air inlet ratio between the different input of the multi-zone nozzle gas circuit, but also only can reduce gradient in to a certain degree distributes, essential reason is, the Inlet Position of reaction chamber is single, therefore cause near the semiconductor wafer center gas always more to be difficult to detach near the edge, thereby cause the difference of the institute's semiconductor wafer centerand edge air-flow of processing distribution.
Based on this, the present invention proposes a kind of gas input device for plasma processing device, the process gas that this device will enter reaction chamber is divided into two-way, respectively by the central authorities of reaction chamber and around enter, distribute thereby obtain more uniform process gas above the wafer in reaction chamber.
Describe described gas input device in detail and have the specific embodiment of the plasma processing device of this gas input device below in conjunction with accompanying drawing.
Fig. 2 is the structural representation of inductively coupled plasma equipment in the present embodiment, and Fig. 3 is the cutaway view of the cover plate of gas input device among Fig. 2, and Fig. 4 is the upward view of Fig. 3 cover plate, and Fig. 5 is the vertical view of Fig. 3 cover plate.Be outstanding characteristics of the present invention, do not provide in the accompanying drawing and the inevitable directly related part of inventive point of the present invention, for example, the concrete structure of radio-frequency power supply, power matching apparatus, electrostatic chuck.
As shown in the figure, described inductively coupled plasma equipment comprises: reaction chamber 10, be positioned at the wafer support 11 of reaction chamber 10 inside, and, be positioned at gas input device 12 reaction chamber 10 1 sides, relative with described wafer support 11.
Wherein, the reaction chamber inner space between wafer support 11 and the gas input device 12 consists of process area.Described wafer support 11 is electrostatic chuck for example, is used for fixing semiconductor wafer 4.The top of reaction chamber 10 is cover plate 13, and this cover plate 13 is made of pottery or quartz material usually.The top of cover plate 13 is equipped with the coil (not shown) that connects radio-frequency power supply, it is coupled to described process area with energy by cover plate, process gas wherein is excited into plasma, thereby the semiconductor wafer 4 on the wafer support 11 is processed, and the residual gas after the processing or reaction product detach reaction chamber 10 by exhaust passage 15.Described exhaust passage 15 be positioned at wafer support 11 around.
Described gas input device 12 is used for to semiconductor wafer 4 lip-deep working region input process gass, and it comprises:
Wherein,
Described nozzle 14 embeds in the described groove 131, the outlet side 141b of described first passage 141 stretches out cover plate 13 by the bottom of groove 131, wafer 4 in the reaction chamber 10, the inlet end 132a of described a plurality of second channels 132 is connected with described nozzle bypass 142.The inlet end 132a of described a plurality of second channel 132 is positioned at described groove 13 inwalls, and outlet side 132b is uniformly distributed in a side of described cover plate 13 orientating reaction chambers 10.
As shown in Figures 2 and 3, the shape of nozzle 14 1 ends matches with the shape of groove 131.For example groove 131 is comprised of three cylindrical holes that superpose successively up and down, radius reduces gradually, wherein the cylindrical hole of radius maximum is positioned at the outside (namely dorsad an example of reaction chamber 10) of cover plate 13, the cylindrical hole of radius minimum is positioned at the inboard (being a side of orientating reaction chamber 10) of cover plate 13, so, groove 131 runs through cover plate 13 inside;
Accordingly, nozzle 14 is comprised of three cylindrical protrusions that superpose successively up and down, radius reduces gradually, the cylindrical protrusions of radius minimum embeds in the cylindrical hole of radius minimum, stretch out cover plate 13 so that be positioned at the outlet side 141b of the cylindrical protrusions of radius minimum by the bottom of groove 131, the cylindrical protrusions of radius maximum embeds in the cylindrical hole of radius maximum, so, nozzle 14 is fixed in the groove 131.
So, process gas is flowed into by the inlet end 141a of the first passage 141 of nozzle 14, then be divided into two parts air-flow, part air-flow enters reaction chamber 10 via the outlet side 141b of first passage 141, another part air-flow flows into described second channel 132 via nozzle bypass 142, outlet side 132b by second channel 132 enters reaction chamber 10, because described a plurality of second channel 132 centers on the center line A-A of groove 131 in cover plate 13 interior even distributions, so, the outlet side 141b of described first passage 141 is as the central air induction mouth, and the outlet side 132b of second channel 132 is the edge air inlet, compare the structure that the central air induction mouth is only arranged in the conventional art, the edge air inlet can be adjusted and enter the gas flow in the process area on the Waffer edge surface, so that have more uniformly process gas pressure and flow distribution to the edge in wafer 4 surfaces central authorities, thereby obtaining more uniform air-flow in the whole surface of wafer distributes, and then can effectively avoid the etching that causes to the edge gas skewness in wafer 4 surfaces central authorities or deposit non-uniform phenomenon, so that the etching of each point or deposition rate are more close on whole wafer surface.
The shape of the shape of cover plate 13 and reaction chamber 10 is complementary, for example reaction chamber 10 is circular, then cover plate 13 is circular, and groove 131 is positioned at the home position of cover plate 13 substantially, and the outlet side 132b of second channel 132 evenly distributes on the concentric circumference of cover plate 13.
In fact, the distribution shape of the outlet side 132b of second channel 132 is corresponding with pending wafer 4 shapes, and for example, wafer 4 is square, and then outlet side 132b evenly distributes on the square girth with the symmetry axis at the center of cover plate 13.
Preferably, described a plurality of second channels 132 are distributed as umbrella shape in cover plate 13, and described second channel 132 is preferably straight hole, can certainly be bent hole or broken line hole.Then when second channel 132 is straight hole, the angle a of the axis of this second channel 132 and cover plate center line is acute angle, as shown in Figure 3, can enter in the situation of reaction chamber 10 at the outlet side of second channel 132 132b, described angle a can be arbitrary value, can be according to the size design of reaction chamber 10.
Described nozzle bypass 142 makes its part flow into second channel 132 for the gas distribution of the first passage 141 of will flowing through.Preferably, described nozzle bypass 142 is a plurality of through holes, and described a plurality of through holes evenly distribute and towards the inlet end 132a of described a plurality of second channels 132 around the axis of described first passage 141, so that being entered in the second channel by shunting of gas uniform.
In addition, in preferred embodiment more, as shown in Figure 2, leave the gap between described nozzle 14 and the groove 13 and consist of gas flow distribution cavity 16, described gas flow distribution cavity 16 is communicated with nozzle bypass 142 and second channel 132, gas is redistributed to each second channel 132, thereby makes further uniform distribution of gas after entering gas flow distribution cavity 16 by nozzle bypass 142 shuntings.
When described groove comprises cylindrical hole, and described nozzle comprises the circular cylindrical projection time-out, and described gas flow distribution cavity is annular.
The outlet side of first passage described in the above embodiment is straight hole, and in addition, among other embodiment of the present invention, the outlet side of described first passage also can be bellmouth orifice, seedpod of the lotus head hole or sieve-like hole.
Described nozzle and groove are tightly connected by sealing ring 19, enter reaction chamber smoothly and do not reveal to guarantee process gas.In addition, all adopt sealing ring 19 to seal between nozzle 14 and cover plate 13, cover plate 13 and reaction chamber 10, reaction chamber 10 and the electrostatic chuck 11.
The operation principle of above-mentioned inductively coupled plasma equipment is as follows:
As shown in Figure 2, arrow represents the direction of air-flow among the figure, process gas directly passes into reaction chamber 10 by the center of cover plate 13 by first passage 141, and, process gas can also be shunted the gas flow distribution cavity 16 that enters between nozzle 14 and the groove 131 by nozzle branch road 142, enter afterwards cover plate 13 interior equally distributed each second channels 132, enter reaction chamber 10 by these second channels 132 from the edge of cover plate 13 again, enter the process gas formation plasma under the exciting of radio-frequency power in the reaction chamber 10, and be fixed on wafer 4 on the electrostatic chuck 11 through physics and chemical reaction after, taken away by the exhaust passage 15 of reaction chamber 10 at last.
As seen, the second channel that is evenly distributed in the cover plate provides pericentral intake method for reaction chamber, as replenishing of air feeding in center, in addition, the structure of second channel is not limited to shown in the above embodiment, for example, also can distribute for a plurality of umbrella shapes of multilayer, as shown in Figure 6, that is to say that every layer of second channel is different from the angle of cover plate center line, and the gas outlet of second channel is on the face of cover plate orientating reaction chamber, evenly distributing around the concentric circumference at cover plate center, the aperture of the second channel of different layers equates or increases successively or reduce.
Need to prove, above embodiment describes as an example of inductively coupled plasma equipment example, in fact, described gas input device can be used for various semiconductor processing equipments based on gas-phase reaction, carry gas in reaction chamber, described semiconductor processing equipment is such as being plasma etching equipment, chemical vapor depsotition equipment etc.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Although the present invention discloses as above with preferred embodiment, yet is not to limit the present invention.Any those of ordinary skill in the art, do not breaking away from the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention according to any simple modification, equivalent variations and the modification that technical spirit of the present invention is done above embodiment, all still belongs in the scope of technical solution of the present invention protection.
Claims (10)
1. a gas input device (12) is characterized in that, comprising:
Nozzle (14), described nozzle (14) has first passage (141), and the nozzle bypass (142) that is communicated with described first passage (141);
Cover plate (13), have groove (131) and a plurality of second channel (132) in the described cover plate (13), described groove (131) is positioned at the center of described cover plate (13) substantially, and described a plurality of second channels (132) evenly distribute in described cover plate (13) around the center line of described groove (131); Wherein,
Described nozzle (14) embeds in the described groove (131), cover plate is stretched out from the bottom of described groove (131) in the outlet side (141b) of described first passage (141), and the inlet end (132a) of described a plurality of second channels (132) is connected with described nozzle bypass (142);
Described a plurality of second channel (132) forms sandwich construction.
2. gas input device according to claim 1, it is characterized in that, a plurality of second channels (132) on the same layer are distributed as umbrella shape in described cover plate (13), be distributed as the multilayer umbrella shape so form described a plurality of second channels (132) of sandwich construction in described cover plate (13).
3. gas input device according to claim 2, it is characterized in that, a plurality of second channels (132) on the same layer are identical with the angle of described cover plate (13) center line, and a plurality of second channels (132) on the different layers are different from the angle of described cover plate (13) center line; The inlet end (132a) of a plurality of second channels (132) on the different layers is positioned at the inwall of described groove (131), and outlet side (132b) is uniformly distributed in described cover plate (13) away from the one side of the inlet end (141a) of described first passage (141) take the center of described cover plate (13) as center of circle concentric circumference.
4. gas input device according to claim 3 is characterized in that, the aperture of the second channel on the different layers (132) equates or increases successively or reduce along gas input direction.
5. each described gas input device is characterized in that according to claim 1-4, and described second channel (132) is straight hole, and then the angle of the axis of this second channel (132) and described cover plate (13) center line is acute angle.
6. each described gas input device according to claim 1-4, it is characterized in that, described nozzle bypass (142) is a plurality of through holes, and described a plurality of through holes evenly distribute and correspondingly towards the inlet end (132a) of described a plurality of second channels (132) around described first passage (141) axis.
7. each described gas input device according to claim 1-4, it is characterized in that, leave the gap between described nozzle (14) and the described groove (131) and consist of gas flow distribution cavity (16), described gas flow distribution cavity (16) is communicated with described nozzle bypass (142) and described a plurality of second channel (132).
8. each described gas input device is characterized in that according to claim 1-4, and described gas flow distribution cavity (16) is annular.
9. each described gas input device is characterized in that according to claim 1-4, and the outlet side (141b) of described first passage (141) is straight hole, bellmouth orifice, seedpod of the lotus head hole or sieve-like hole.
10. plasma processing device comprises reaction chamber and such as each described gas input device (12) of claim 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210452617 CN102945783A (en) | 2009-06-25 | 2009-06-25 | Gas filling device and plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210452617 CN102945783A (en) | 2009-06-25 | 2009-06-25 | Gas filling device and plasma processing equipment |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100879287A Division CN101930889A (en) | 2009-06-25 | 2009-06-25 | Gas input device and plasma processing equipment |
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| CN102945783A true CN102945783A (en) | 2013-02-27 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105695957A (en) * | 2014-11-28 | 2016-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air inlet device and semiconductor processing equipment |
| CN104681385B (en) * | 2013-12-03 | 2017-01-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air-intake device, reaction cavity and plasma processing equipment |
| CN106575597A (en) * | 2014-08-15 | 2017-04-19 | 应用材料公司 | Nozzle for uniform plasma processing |
-
2009
- 2009-06-25 CN CN 201210452617 patent/CN102945783A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681385B (en) * | 2013-12-03 | 2017-01-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air-intake device, reaction cavity and plasma processing equipment |
| CN106575597A (en) * | 2014-08-15 | 2017-04-19 | 应用材料公司 | Nozzle for uniform plasma processing |
| CN106575597B (en) * | 2014-08-15 | 2019-01-15 | 应用材料公司 | Nozzle for homogeneous plasma processing |
| CN109637922A (en) * | 2014-08-15 | 2019-04-16 | 应用材料公司 | Nozzle for homogeneous plasma processing |
| US10465288B2 (en) | 2014-08-15 | 2019-11-05 | Applied Materials, Inc. | Nozzle for uniform plasma processing |
| US11053590B2 (en) | 2014-08-15 | 2021-07-06 | Applied Materials, Inc. | Nozzle for uniform plasma processing |
| CN105695957A (en) * | 2014-11-28 | 2016-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air inlet device and semiconductor processing equipment |
| CN105695957B (en) * | 2014-11-28 | 2018-08-24 | 北京北方华创微电子装备有限公司 | Inlet duct and semiconductor processing equipment |
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Application publication date: 20130227 |