CN109881182A - Inlet duct and chemical vapor depsotition equipment - Google Patents
Inlet duct and chemical vapor depsotition equipment Download PDFInfo
- Publication number
- CN109881182A CN109881182A CN201910260291.0A CN201910260291A CN109881182A CN 109881182 A CN109881182 A CN 109881182A CN 201910260291 A CN201910260291 A CN 201910260291A CN 109881182 A CN109881182 A CN 109881182A
- Authority
- CN
- China
- Prior art keywords
- choke block
- inlet duct
- diffuser plate
- air supply
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
This announcement provides a kind of inlet duct and chemical vapor depsotition equipment, including air supply plant, the baffle being connected with air supply plant and gas buffer storage, wherein, gas buffer storage further includes choke block and diffuser plate, several stomatas are provided on choke block, the aperture of stomata on the choke block region mutually close with air supply plant is small, choke block and air supply plant further away from region on stomata aperture it is bigger, after stomata of the gas by different pore size size on choke block, gas becomes uniform, in subsequent deposition film forming, quality of forming film is improved.
Description
Technical field
This announcement is related to CVD gas handling system more particularly to a kind of inlet duct and chemical vapor depsotition equipment.
Background technique
Chemical vapor deposition (Chemical Vapor Deposition, CVD), refers to reactive material in gaseous condition
Under, it reacts to form the process of film on the surface of device substrate.CVD equipment is production light emitting diode (Light
Emitting Diode, LED) key equipment.
In CVD equipment work, by adjusting process gas and technological temperature, and then deposited respectively on the substrate of LED
Kind film, therefore, during the deposition process, the condition in reaction chamber has important influence to quality of forming film.In existing CVD equipment,
The baffle (Baffle Plate, BP) and diffuser plate (Diffuser) mostly used carries out distributed controll to transmission gas, works as gas
Body enters through air inlet pipe, is entered in reaction chamber by BP to Diffuser diffusion, but due to the gaseous mixture of CVD equipment
The relationship of position between body admission line and diffuser plate, reaction gas are past from center when entering reaction chamber by diffuser plate
Surrounding diffusion, this diffusion mode can not achieve to be evenly distributed completely, and the air-flow of chamber central is big, and the air-flow of cavity edge
Small, in the deposition process of film, the inhomogeneities of this gas diffusion causes film deposition uneven, influences film quality.
In conclusion it is being passed through air-flow in CVD equipment, and when air-flow passes through baffle and diffuser plate, point at intracavitary each position
Cloth and flow velocity are uneven, and for this non-uniform air-flow of diffusion when reacting film forming, the deposition of film is uneven, so that film yield
Decline.
Summary of the invention
This announcement provides a kind of inlet duct and chemical vapor depsotition equipment, to solve in CVD vapor deposition apparatus, air-flow
When by baffle and diffuser plate, gas diffusion is uneven, the charge flow rate uniformity is inconsistent, and then quality of forming film difference etc. is asked
Topic.
In order to solve the above technical problems, the technical solution that this announcement embodiment provides is as follows:
According to this announcement embodiment in a first aspect, providing a kind of inlet duct, comprising:
Air supply plant, the baffle being connected with air supply plant and gas buffer storage；
Wherein, the gas buffer storage is connected with the baffle,
Wherein, the gas buffer storage further includes choke block and diffuser plate, and multiple gas are additionally provided on the choke block
Hole, the choke block and the air supply plant closer to region on the stomata aperture it is smaller, the choke block and institute
State air supply plant further away from region on the stomata the aperture it is bigger；
The bottom of the gas buffer storage is arranged in the diffuser plate.
According to one embodiment of this announcement, the choke block is round choke block, the institute of the stomata on the choke block
Aperture is stated to be gradually increased from the center of the choke block to the circumferencial direction of the choke block.
According to one embodiment of this announcement, the choke block is dismountable spliced choke block.
According to one embodiment of this announcement, the pore size of multiple diffusion holes in each region is identical on the diffuser plate.
According to one embodiment of this announcement, the diffuser plate is circular slab.
According to one embodiment of this announcement, the air taking port of the air supply plant is opposite with the central area of the choke block.
It is described according to one embodiment of this announcement, multiple diffusion holes, the choke block and institute are additionally provided on the diffuser plate
It states and forms gas buffer region between diffuser plate.
According to one embodiment of this announcement, the distance between the baffle and the choke block are not more than the choke block and institute
State the distance between diffuser plate.
According to one embodiment of this announcement, the surface area of the baffle is not less than the surface area of the choke block.
According to the second aspect of this announcement, a kind of chemical vapor depsotition equipment is additionally provided, the air intake apparatus includes this
The inlet duct provided is provided.
In conclusion this announcement embodiment has the beneficial effect that
This announcement provides a kind of new inlet duct, by CVD equipment choke block and diffuser plate set again
The stomata of different pore size size is arranged in meter on the choke block, and the local air vent aperture close to air inlet is smaller, far from air inlet
The aperture of the local stomata of mouth is larger, and when being passed through air-flow, air-flow passes through the choke block that this announcement provides, due to air inlet periphery
Air flow rate and flow velocity are big, and lesser air vent aperture will make the flow velocity of air-flow reduce, and then guarantee the gas of buffer area
The consistency of flow and flow rate.In this way, for the consistency of film with regard to preferable, quality is higher when carrying out film deposition.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of announcement
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the inlet duct schematic diagram of this announcement embodiment；
Fig. 2 is the structural schematic diagram of choke block in this announcement embodiment；
Fig. 3 is the chemical vapor depsotition equipment structural schematic diagram of this announcement embodiment.
Specific embodiment
Below in conjunction with the attached drawing in this announcement embodiment, the technical solution in this announcement embodiment is carried out clear, complete
Site preparation description.Obviously, described embodiment is only this announcement a part of the embodiment, instead of all the embodiments.It is based on
Embodiment in this announcement, those skilled in the art's every other implementation obtained without creative efforts
Example belongs to the range of this announcement protection.
In this revealed embodiment, as shown in FIG. 1, FIG. 1 is the inlet duct structural schematic diagrams in this announcement embodiment.
The inlet duct includes air supply plant 100, gas buffer storage 104, the baffle 101 being connected with the air supply plant 100,
The choke block 102 for being arranged in below baffle 101 and being connected with the baffle 101, and be arranged in the gas buffer storage
The diffuser plate 103 of 104 bottoms.Baffle 101 can be connected together with gas buffer storage 104, form an entirety.Traditional
In CVD equipment, gas is after through choke block, and the gas flow and flow velocity size of each region are all inconsistent, this is to subsequent
Film deposition has a huge impact.
In this announcement embodiment, choke block 102 is redesigned, it is several big by being designed on choke block 102
Small different stomata, wherein closer to the stomata in 100 air taking port region of air supply plant aperture design it is smaller, further away from sending
The aperture design of the stomata in 100 air taking port region of device of air it is bigger.Since at air taking port, the density and flow of air-flow are very
Greatly, when the gas of these big flows passes through the stomata of smaller aperture due, flow velocity can be effectively reduced, and the area far from air taking port
Domain, the flow and flow velocity of air-flow are relatively small, when the air-flow in the small region of these flow velocitys passes through the stomata of larger aperture, big gas
Hole can't generate too much influence to its flow velocity.In this way, gas respectively enters buffer area by the different zones of choke block 102
Afterwards, the air-flow of each section is just adjusted to consistent in buffer area, and in turn, the gas of these consistency passes through diffuser plate 103 again
Afterwards, it is vapor-deposited, the consistency of obtained film is just improved.Several diffusions is also equipped on diffuser plate 103
Hole, the stomata to compare on choke block 102, the pore size on diffuser plate 103 are consistent.
Diffuser plate 103 can be circular slab, and the surface area of baffle 103 is not less than the surface area of choke block 102.Also, at this
In the inlet duct of announcement, the distance between the baffle 101 and the choke block 102 are not more than choke block 102 and diffuser plate
The distance between 103, in this way, more gases could be stored in buffer area.
Specifically, as shown in Fig. 2, Fig. 2 is the structural schematic diagram of choke block in this announcement embodiment.Choke block 203 can be
Detachable round choke block, each detachable module are respectively as follows: the central area 200 of air vent aperture very little, air vent aperture
Biggish intermediate region 201, intermediate region 202 and other regions.When carrying out the design of 203 pore size of choke block, root
According to the calculation formula in restricting orifice aperture:
In above formula: d0For the aperture of restricting orifice, unit mm；G is gas mass flow, unit Kg/h；φ is stream
Coefficient of discharge；P1For pressure before orifice plate, unit Kpa；ρ1For the density of gas before orifice plate, unit Kg/m3。
From the calculation formula in above-mentioned orifice plate aperture it is found that the flow of aperture and gas is positively correlated, therefore, aperture is got over
Greatly, the flow of gas is also bigger, when air supply plant is supplied gas, with air taking port closer to place, the air-flow being subject on choke block
Will be bigger, meanwhile, the flow of air-flow also will be bigger, such as the position of central area 200；And the air taking port with air supply plant
Further away from place, the air-flow being subject on choke block 203 will be smaller, and the flow and flow velocity of air-flow are also smaller, such as middle area
The fringe region of domain 202 and choke block 203.According to this characteristic, when designing choke block 203, by the hole of central area 200
Diameter designs smaller, and along central area 200 on circumferencial direction, the aperture of stomata is gradually increased.The air taking port of air supply plant
When the surface in centrally disposed region 200, in this way, when the air-flow of air taking port passes through choke block 203, on central area 200
Intensive stomata will the air-flow fast to flow velocity stop, reduce its flow velocity and flow, and intermediate region 202 and marginal zone
Sparse stomata is smaller to the blocking of gas on domain, here by air-flow flow velocity and flow will not reduce substantially.Gas exists
It is entered by the stomata of choke block 203 when being mixed in buffer area, the consistency of the gas of each section is essentially identical in buffer area.
After the identical gas of these consistency passes through diffuser plate again, in gas aggradation film forming, quality of forming film can be improved, effectively
Improve deposition effect.
Meanwhile this announcement also provides a kind of chemical vapor depsotition equipment, as shown in figure 3, Fig. 3 is in this announcement embodiment
Chemical vapor depsotition equipment.Inlet duct 300 in the shell 301 of chemical vapor depsotition equipment is set.The chemical gaseous phase
Deposition includes the inlet duct that this discloses above-mentioned offer.To which the chemical vapor depsotition equipment of this announcement can be improved effectively
Quality of forming film improves deposition effect.
Detailed Jie has been carried out to a kind of inlet duct provided by this announcement embodiment and chemical vapor depsotition equipment above
It continues, the technical solution and its core concept of this announcement that the above embodiments are only used to help understand；This field it is common
Technical staff is it is understood that it is still possible to modify the technical solutions described in the foregoing embodiments, and these are modified
Or replacement, it does not separate the essence of the corresponding technical solution, and this discloses the range of the technical solution of each embodiment.
Claims (10)
1. a kind of inlet duct characterized by comprising
Air supply plant, the baffle being connected with the air supply plant and gas buffer storage；
Wherein, the gas buffer storage is connected with the baffle；
Wherein, the gas buffer storage further includes choke block and diffuser plate, and multiple stomatas, institute are additionally provided on the choke block
State choke block and the air supply plant closer to region on the stomata aperture it is smaller, the choke block is supplied gas with described
Device further away from region on the stomata the aperture it is bigger；
Wherein, the bottom of the gas buffer storage is arranged in the diffuser plate.
2. inlet duct according to claim 1, which is characterized in that the choke block is round choke block, the throttling
The aperture of the stomata on plate is gradually increased from the center of the choke block to the circumferencial direction of the choke block.
3. inlet duct according to claim 1, which is characterized in that the choke block is dismountable spliced throttling
Plate.
4. inlet duct according to claim 1, which is characterized in that the aperture of multiple diffusion holes on the diffuser plate is big
It is small identical.
5. inlet duct according to claim 1, which is characterized in that the diffuser plate is circular slab.
6. inlet duct according to claim 1, which is characterized in that the air taking port of the air supply plant and the choke block
Central area it is opposite.
7. inlet duct according to claim 1, which is characterized in that multiple diffusion holes are additionally provided on the diffuser plate,
Gas buffer region is formed between the choke block and the diffuser plate.
8. inlet duct according to claim 1, which is characterized in that the distance between the baffle and the choke block are no
Greater than the distance between the choke block and the diffuser plate.
9. inlet duct according to claim 1, which is characterized in that the surface area of the baffle is not less than the choke block
Surface area.
10. a kind of chemical vapor depsotition equipment, which is characterized in that including inlet duct as described in any one of claim 1 to 9
And shell, the inlet duct are arranged in the shell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910260291.0A CN109881182A (en) | 2019-04-02 | 2019-04-02 | Inlet duct and chemical vapor depsotition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910260291.0A CN109881182A (en) | 2019-04-02 | 2019-04-02 | Inlet duct and chemical vapor depsotition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109881182A true CN109881182A (en) | 2019-06-14 |
Family
ID=66935647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910260291.0A Pending CN109881182A (en) | 2019-04-02 | 2019-04-02 | Inlet duct and chemical vapor depsotition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109881182A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111394714A (en) * | 2020-04-21 | 2020-07-10 | 重庆臻宝实业有限公司 | Chemical deposition gas distribution structure and device thereof |
| CN111424264A (en) * | 2020-04-27 | 2020-07-17 | 深圳市原速光电科技有限公司 | Thin film material deposition reaction device |
| CN113818005A (en) * | 2020-06-19 | 2021-12-21 | 拓荆科技股份有限公司 | Film preparation equipment and method |
| CN114959647A (en) * | 2022-04-07 | 2022-08-30 | 江苏微导纳米科技股份有限公司 | Thin film deposition device and air inlet mechanism thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202352714U (en) * | 2011-11-21 | 2012-07-25 | 浙江正国太阳能科技有限公司 | Flow homogenization plate capable of improving diffusion uniformity |
| CN203683663U (en) * | 2013-12-13 | 2014-07-02 | 无锡宏纳科技有限公司 | Plasma-enhanced chemical vapor deposition flow homogenizing plate |
| CN207775349U (en) * | 2018-01-22 | 2018-08-28 | 淮安澳洋顺昌光电技术有限公司 | chemical vapour deposition reaction chamber gas uniform flow system |
| US20180340257A1 (en) * | 2017-05-25 | 2018-11-29 | Applied Materials, Inc. | Diffuser for uniformity improvement in display pecvd applications |
| CN109402609A (en) * | 2018-12-21 | 2019-03-01 | 成都姜业光电科技有限公司 | A kind of gas shower |
-
2019
- 2019-04-02 CN CN201910260291.0A patent/CN109881182A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202352714U (en) * | 2011-11-21 | 2012-07-25 | 浙江正国太阳能科技有限公司 | Flow homogenization plate capable of improving diffusion uniformity |
| CN203683663U (en) * | 2013-12-13 | 2014-07-02 | 无锡宏纳科技有限公司 | Plasma-enhanced chemical vapor deposition flow homogenizing plate |
| US20180340257A1 (en) * | 2017-05-25 | 2018-11-29 | Applied Materials, Inc. | Diffuser for uniformity improvement in display pecvd applications |
| CN207775349U (en) * | 2018-01-22 | 2018-08-28 | 淮安澳洋顺昌光电技术有限公司 | chemical vapour deposition reaction chamber gas uniform flow system |
| CN109402609A (en) * | 2018-12-21 | 2019-03-01 | 成都姜业光电科技有限公司 | A kind of gas shower |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111394714A (en) * | 2020-04-21 | 2020-07-10 | 重庆臻宝实业有限公司 | Chemical deposition gas distribution structure and device thereof |
| CN111424264A (en) * | 2020-04-27 | 2020-07-17 | 深圳市原速光电科技有限公司 | Thin film material deposition reaction device |
| CN113818005A (en) * | 2020-06-19 | 2021-12-21 | 拓荆科技股份有限公司 | Film preparation equipment and method |
| CN114959647A (en) * | 2022-04-07 | 2022-08-30 | 江苏微导纳米科技股份有限公司 | Thin film deposition device and air inlet mechanism thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109881182A (en) | Inlet duct and chemical vapor depsotition equipment | |
| US9855575B2 (en) | Gas injector and cover plate assembly for semiconductor equipment | |
| TWI612174B (en) | Chemical vapor deposition appartus, apparatus, and method of chemical vapor deposition | |
| JP2009141343A (en) | Vapor phase growth apparatus and method | |
| CN102134743A (en) | Manufacturing apparatus and manufacturing method of silicon carbide single crystal | |
| CN105331953A (en) | Gas inlet device and semiconductor machining device | |
| US9852905B2 (en) | Systems and methods for uniform gas flow in a deposition chamber | |
| JP4978554B2 (en) | Method and apparatus for vapor phase growth of thin film | |
| WO2017097163A1 (en) | Gas distributor for use with film deposition technique | |
| TW201428116A (en) | Vacuum vapor deposition apparatus | |
| CN207537531U (en) | A kind of device for improving flow field uniformity | |
| JP2010027675A (en) | Vapor deposition apparatus | |
| KR100484945B1 (en) | Semiconductor device fabrication apparatus having multi-hole angled gas injection system | |
| CN114059164B (en) | Silicon carbide epitaxial growth device | |
| CN104419909B (en) | A kind of plated film boiler tube | |
| TW550727B (en) | Semiconductor device fabrication apparatus having multi-hole angled gas injection system | |
| KR20120096026A (en) | Vapor deposition apparatus | |
| TWI732910B (en) | Vapor growth device, manufacturing method of epitaxial wafer, and attachment for vapor growth device | |
| CN101768733A (en) | Gas distribution device and plasma processing device | |
| JPS6335776A (en) | Chemical vapor deposition device | |
| JP2949852B2 (en) | Gas phase processing equipment | |
| JPH01109714A (en) | Vapor-phase epitaxy appratus | |
| JPS58197724A (en) | Gas introducing tube for vapor growth apparatus | |
| TWI695085B (en) | Gas phase growth device and method for manufacturing epitaxial wafer | |
| JPH01235235A (en) | Vapor growth equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
|
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190614 |