CN202352714U - Flow homogenization plate capable of improving diffusion uniformity - Google Patents
Flow homogenization plate capable of improving diffusion uniformity Download PDFInfo
- Publication number
- CN202352714U CN202352714U CN2011204652275U CN201120465227U CN202352714U CN 202352714 U CN202352714 U CN 202352714U CN 2011204652275 U CN2011204652275 U CN 2011204652275U CN 201120465227 U CN201120465227 U CN 201120465227U CN 202352714 U CN202352714 U CN 202352714U
- Authority
- CN
- China
- Prior art keywords
- flow homogenization
- plate
- flow
- central point
- oval
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a flow homogenization plate capable of improving diffusion uniformity. Regular flow homogenization air holes are distributed on the flow homogenization plate which is a quartz plate; the flow homogenization air holes are distributed at multiple layers in an annular shape; and the flow homogenization plate has an oval shape of which the lower part is provided with a notch. The distribution central point of the flow homogenization air holes is positioned on an upper short semi shaft of the oval flow homogenization plate, and the distance between the central point and the central point of the oval shape is 5 to 30mm. The flow homogenization plate has the advantages that 1, the area of the flow homogenization plate is larger than that of the conventional flow homogenization plate. During phosphorus diffusion, more doped source air flow can pass through the flow homogenization plate, the air uniformity is improved, and the atmosphere is uniformly distributed between silicon wafers, so nonuniformity of a diffusion pipe is improved; 2, the distribution central point of the flow homogenization air holes is positioned on the upper short semi shaft of the oval flow homogenization plate, so the atmosphere is uniformly distributed on a single silicon wafer; therefore, the nonuniformity of a diffusion uniwafer is improved; and 3, the flow homogenization plate has a simple structure, is convenient to prepare, is high in practicability and can be popularized and applied.
Description
Technical field
The utility model relates to a kind of tools of solar cell, especially a kind of even flow plate that improves diffusion uniformity.
Background technology
In recent years, the investor grows with each passing day for the interest of solar energy industry.Solar energy is compared with fossil fuel as a kind of novel renewable energy, and it distributes and sends out extensively, can freely utilize, and is inexhaustible; And solar power generation is definitely clean, does not produce public hazards.So solar power generation is described as the optimal energy, be the human final reliable energy.
Solar cell is a kind of luminous energy to be converted into the device of electric energy, and its basic principle is to utilize the photovoltaic effect of PN junction that luminous energy is changed into electric energy.Crystal silicon solar energy battery occupies the share of the overwhelming majority in solar cell.
At present, in the production of crystalline silicon solar batteries process, the diffusion system knot operation that is used to make PN junction is one of critical process.Solar cell is constantly being pursued the high efficiency while, and high square resistance is also constantly pursued in diffusion, and the square resistance uniformity is the primary goal that the diffusion high square resistance is pursued, and side's inhomogeneity quality of resistance can have a strong impact on the efficient of solar cell.
Summary of the invention
The purpose of the utility model is a kind of even flow plate that improves diffusion uniformity that designs for the deficiency that solves above-mentioned technology, thereby improves the uniformity of square resistance.
The even flow plate of the raising diffusion uniformity that the utility model designed, the uniform flow pore of the queueing discipline that distributing on the even flow plate, said even flow plate are quartz plate, said uniform flow pore is the circular distribution of multilayer; The shape of said even flow plate is the notched ellipse in bottom.
As preferably, said uniform flow gas cell distribution central point is on semi-minor axis on the oval even flow plate, and the spacing of its central point and oval central point is 5mm～30mm.
Optimized value is when producing: said oval major semiaxis length is 86%～95% of quartz ampoule radius; Oval semi-minor axis is 92%～96% of a quartz ampoule radius.
The even flow plate of the raising diffusion uniformity of the utility model gained, the advantage that compared with prior art has is:
1, area is bigger than the area of existing even flow plate.When carrying out phosphorous diffusion, make more impure source gas stream through even flow plate, the uniformity of gas is improved, reach the even distribution of atmosphere between silicon chip and silicon chip, thereby improve anemostat inequality degree.
2, be placed on uniform flow gas cell distribution central point on the last semi-minor axis of oval even flow plate, reach the even distribution of atmosphere on single silicon chip, thereby improve diffusion monolithic unevenness.
3, simple in structure, be convenient to preparation, and have good practicality, be suitable for applying.
Description of drawings
Fig. 1 is embodiment 1 structural representation;
Among the figure: even flow plate 1, uniform flow pore 2.
Embodiment
Combine accompanying drawing that the utility model is done further to describe through embodiment below.
Embodiment 1:
As shown in Figure 1, the even flow plate of the described raising diffusion uniformity of present embodiment, the uniform flow pore 2 of the queueing discipline that distributing on the even flow plate 1, said even flow plate 1 is a quartz plate, said uniform flow pore 2 is the circular distribution of multilayer; The shape of said even flow plate 1 is the notched ellipse in bottom.Said uniform flow pore 2 distribution center's points are on semi-minor axis on the oval even flow plate 1, and the spacing of its central point and oval central point is 5mm～30mm.Said oval major semiaxis length is 86%～95% of quartz ampoule radius; Oval semi-minor axis is 92%～96% of a quartz ampoule radius.
The even flow plate 1 of the raising diffusion uniformity of the utility model gained, the advantage that compared with prior art has is:
1, area is bigger than the area of existing even flow plate 1.When carrying out phosphorous diffusion, make more impure source gas stream through even flow plate 1, the uniformity of gas is improved, reach the even distribution of atmosphere between silicon chip and silicon chip, thereby improve anemostat inequality degree.
2, uniform flow pore 2 distribution center's points are on semi-minor axis on the oval even flow plate 1; Mainly be that the side that the side of corner hinders than last corner under the silicon chip after the phosphorous diffusion hinders little; Explain that the concentration of concentration ratio the first half of the doped source atmosphere field of quartz ampoule the latter half wants high,, be placed on uniform flow pore 2 distribution center's points on the last semi-minor axis of oval even flow plate 1 for improving this phenomenon; Reach the even distribution of atmosphere on single silicon chip, thereby improve diffusion monolithic unevenness.
3, simple in structure, be convenient to preparation, and have good practicality, be suitable for applying.
Specific embodiment described herein only is that the design to the utility model illustrates.The utility model person of ordinary skill in the field can make various modifications or replenishes or adopt similar mode to substitute described specific embodiment, but can't depart from the spirit of the utility model or surmount the defined scope of appended claims.
Claims (2)
1. even flow plate that improves diffusion uniformity, the uniform flow pore of the queueing discipline that distributing on the even flow plate is characterized in that: said even flow plate is a quartz plate, said uniform flow pore is the circular distribution of multilayer; The shape of said even flow plate is the notched ellipse in bottom.
2. the even flow plate of raising diffusion uniformity according to claim 1 is characterized in that said uniform flow gas cell distribution central point on semi-minor axis on the oval even flow plate, and the spacing of its central point and oval central point is 5mm～30mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204652275U CN202352714U (en) | 2011-11-21 | 2011-11-21 | Flow homogenization plate capable of improving diffusion uniformity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204652275U CN202352714U (en) | 2011-11-21 | 2011-11-21 | Flow homogenization plate capable of improving diffusion uniformity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202352714U true CN202352714U (en) | 2012-07-25 |
Family
ID=46541688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204652275U Expired - Fee Related CN202352714U (en) | 2011-11-21 | 2011-11-21 | Flow homogenization plate capable of improving diffusion uniformity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202352714U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103436967A (en) * | 2013-08-12 | 2013-12-11 | 英利集团有限公司 | Method for optimizing air flow distribution of tubular diffusion furnace of solar cell piece |
| CN109881182A (en) * | 2019-04-02 | 2019-06-14 | 深圳市华星光电技术有限公司 | Inlet duct and chemical vapor depsotition equipment |
-
2011
- 2011-11-21 CN CN2011204652275U patent/CN202352714U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103436967A (en) * | 2013-08-12 | 2013-12-11 | 英利集团有限公司 | Method for optimizing air flow distribution of tubular diffusion furnace of solar cell piece |
| CN103436967B (en) * | 2013-08-12 | 2015-09-30 | 英利集团有限公司 | A kind of method optimizing solar battery sheet tubular diffusion furnace air flow method |
| CN109881182A (en) * | 2019-04-02 | 2019-06-14 | 深圳市华星光电技术有限公司 | Inlet duct and chemical vapor depsotition equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102446991B (en) | Film solar battery based on crystalline silicon and manufacturing method thereof | |
| CN102810578B (en) | A kind of solar cell and main gate line thereof | |
| CN102820383A (en) | Spread method of polycrystalline silicon solar cell | |
| CN102097524A (en) | Method for diffusing high sheet resistance of solar cells | |
| CN102427097A (en) | Oxidization and passivation method and passivation device of silicon | |
| CN201966217U (en) | Crystalline silicon solar cell back electrode | |
| CN202352714U (en) | Flow homogenization plate capable of improving diffusion uniformity | |
| CN102263153A (en) | Improved diffusion method of solar cells | |
| CN103227242A (en) | Preparation method of solar cell with back electrode point contact structure | |
| CN101339965A (en) | Selective one-time dispersing method of crystalline silicon solar cell | |
| CN103227247A (en) | Preparation method of efficient crystalline silicon heterojunction solar cell | |
| CN101980381A (en) | Crystalline silicon solar cell double-diffusion technology | |
| CN101339964A (en) | Selective dispersing method of crystalline silicon solar cell | |
| CN103346074A (en) | Method for preparing crystalline silicon battery pieces through multistep gradient diffusion method | |
| CN102751386A (en) | Short wave response crystalline silicon solar battery preparation method based on multiple layers of silicon quantum dot | |
| CN202695516U (en) | Flow-equalizing block piece | |
| CN105063742A (en) | Mono-like crystal growth method, mono-like silicon ingot and mono-like battery | |
| CN103594541A (en) | Polycrystalline silicon/monocrystalline silicon heterojunction structure applied to solar cell and preparation method thereof | |
| CN101777592B (en) | Heavily-doped UMG silicon epitaxially generated high-low junction-based solar cell and preparation method | |
| CN107424915A (en) | Discontinuous crystallization silica-base film, hetero-junctions crystal-silicon solar cell and preparation method | |
| CN106449807A (en) | Photovoltaic cell and preparation method thereof | |
| CN102544184A (en) | Personal identification number (PIN) solar battery with transverse structure and preparation method thereof | |
| CN103436967B (en) | A kind of method optimizing solar battery sheet tubular diffusion furnace air flow method | |
| CN108630777B (en) | The mixing arrangement and its manufacturing method of solar hydrogen making are carried out by water decomposition | |
| CN202473852U (en) | Uniform flow plate capable of changing atmosphere field |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120725 Termination date: 20131121 |