CN203683663U - Plasma-enhanced chemical vapor deposition flow homogenizing plate - Google Patents
Plasma-enhanced chemical vapor deposition flow homogenizing plate Download PDFInfo
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- CN203683663U CN203683663U CN201320819433.0U CN201320819433U CN203683663U CN 203683663 U CN203683663 U CN 203683663U CN 201320819433 U CN201320819433 U CN 201320819433U CN 203683663 U CN203683663 U CN 203683663U
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- holes
- vapor deposition
- chemical vapor
- enhanced chemical
- homogenizing plate
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 14
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 abstract 2
- 238000001556 precipitation Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The utility model relates to a plasma-enhanced chemical vapor deposition flow homogenizing plate. The flow homogenizing plate is characterized by being made of an aluminum alloy and having 460 holes of different sizes in the surface. The flow homogenizing plate is 300-500 microns in thickness, and is circular. The 460 holes of different sizes include 16 holes with diameter of 3.9 millimeters distributed uniformly in the one ninth area of the middle, 20 holes with diameter of 3.95 millimeters distributed uniformly in the one quarter area of the middle outside the one ninth area, and other holes with diameter of 4 millimeters distributed uniformly. Compared with the prior art, the flow homogenizing plate has the advantage that the problem that a large quantity of substances are precipitated in the middle of a chip below the homogenizing plate while a small quantity of substances are precipitated on the periphery in the prior art is solved.
Description
Technical field
The utility model relates to optical communication field, especially a kind of plasma enhanced chemical vapor deposition even flow plate.
Background technology
Plasma enhanced chemical vapor deposition (plasma enhanced chemical vapor deposition, PECVD) be to make by microwave or radio frequency etc. the ionization of gas that contains film composed atom, form plasma body in part, and plasma chemistry activity is very strong, be easy to react, on substrate, deposit desired film.For chemical reaction can be carried out at lower temperature, utilize the activity of plasma body to promote reaction.
Even flow plate is mainly used to control the homogeneity of gas in reaction box, and the gas uniform that makes to enter in settler is distributed in chip surface.Consider that gas is to be produced by top electrode middle, and the hole of the plasma enhanced chemical vapor deposition even flow plate of present stage is to be all evenly distributed on even flow plate, will inevitably cause the material of chip intermediate sedimentation below more, the material of peripheral precipitation is less, does not reach so equally distributed object.
Summary of the invention
The utility model provides a kind of plasma enhanced chemical vapor deposition even flow plate, has solved in prior art the material of the chip intermediate sedimentation below even flow plate more, the less problem of material of peripheral precipitation.
A kind of plasma enhanced chemical vapor deposition even flow plate structure, is characterized in that: its material is aluminium alloy, surface arrangement has 460 holes not of uniform size.
Described even flow plate thickness is 300-500 micron, and shape is rounded.
460 described holes not of uniform size, in the middle of comprising, 1/9 area place diameter is equally distributed 16 holes of 3.9 millimeters, the diameter that middle 1/4 area distributes except above-mentioned 1/9 area is equally distributed 20 holes of 3.95 millimeters, and other equally distributed diameter are the hole of 4 millimeters.
The utility model and prior art are compared, and its effect is actively with obvious.The utility model even flow plate does not change the quantity in hole on the basis of original even flow plate, has changed the distribution density in hole, and its density is suitably reduced in the hole in the middle of even flow plate in the region of area, and the diameter in hole reduces a little, more past periphery, the distribution density in hole is larger, and it is large that the diameter in hole also suitably becomes.So just make precipitation be evenly distributed, the material that has solved the chip intermediate sedimentation below even flow plate is more, the less problem of material of peripheral precipitation.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing even flow plate.
Fig. 2 is structural representation of the present utility model.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is elaborated.
As shown in Figure 1, a kind of plasma enhanced chemical vapor deposition even flow plate structure, is characterized in that: its material is aluminium alloy, and surface arrangement has 460 holes not of uniform size.
Described even flow plate thickness is 300-500 micron, and shape is rounded.
460 described holes not of uniform size, in the middle of comprising, 1/9 area place diameter is equally distributed 16 holes of 3.9 millimeters, the diameter that middle 1/4 area distributes except above-mentioned 1/9 area is equally distributed 20 holes of 3.95 millimeters, and other equally distributed diameter are the hole of 4 millimeters.
Certainly; above-mentioned explanation is not to restriction of the present utility model; the utility model is also not limited in above-mentioned giving an example, and variation, remodeling, interpolation or replacement that those skilled in the art make in essential scope of the present utility model, also should belong to protection domain of the present utility model.
Claims (3)
1. a plasma enhanced chemical vapor deposition even flow plate, is characterized in that: its material is aluminium alloy, and surface arrangement has 460 holes not of uniform size.
2. a kind of plasma enhanced chemical vapor deposition even flow plate as claimed in claim 1, is characterized in that: described even flow plate thickness is 300-500 micron, and shape is rounded.
3. a kind of plasma enhanced chemical vapor deposition even flow plate as claimed in claim 1, it is characterized in that: 460 described holes not of uniform size, in the middle of comprising, 1/9 area place diameter is equally distributed 16 holes of 3.9 millimeters, the diameter that middle 1/4 area distributes except above-mentioned 1/9 area is equally distributed 20 holes of 3.95 millimeters, and other equally distributed diameter are the hole of 4 millimeters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320819433.0U CN203683663U (en) | 2013-12-13 | 2013-12-13 | Plasma-enhanced chemical vapor deposition flow homogenizing plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320819433.0U CN203683663U (en) | 2013-12-13 | 2013-12-13 | Plasma-enhanced chemical vapor deposition flow homogenizing plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203683663U true CN203683663U (en) | 2014-07-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320819433.0U Expired - Lifetime CN203683663U (en) | 2013-12-13 | 2013-12-13 | Plasma-enhanced chemical vapor deposition flow homogenizing plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203683663U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108048818A (en) * | 2017-12-18 | 2018-05-18 | 德淮半导体有限公司 | Chemical vapor deposition unit and its application method |
| CN109881182A (en) * | 2019-04-02 | 2019-06-14 | 深圳市华星光电技术有限公司 | Inlet duct and chemical vapor depsotition equipment |
-
2013
- 2013-12-13 CN CN201320819433.0U patent/CN203683663U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108048818A (en) * | 2017-12-18 | 2018-05-18 | 德淮半导体有限公司 | Chemical vapor deposition unit and its application method |
| CN109881182A (en) * | 2019-04-02 | 2019-06-14 | 深圳市华星光电技术有限公司 | Inlet duct and chemical vapor depsotition equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140702 |
|
| CX01 | Expiry of patent term |