CN102437002B - A kind of even gas dish for air intake structure - Google Patents
A kind of even gas dish for air intake structure Download PDFInfo
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- CN102437002B CN102437002B CN201110388396.8A CN201110388396A CN102437002B CN 102437002 B CN102437002 B CN 102437002B CN 201110388396 A CN201110388396 A CN 201110388396A CN 102437002 B CN102437002 B CN 102437002B
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- even gas
- gas dish
- close
- air intake
- sidewall
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Abstract
The present invention relates to plasma etching, deposition apparatus technical field, be specifically related to a kind of even gas dish be applied in the air intake structure of plasma etching, deposition apparatus.Described some apertures that distributes on the even gas dish of air intake structure, described aperture from the center of described even gas dish to edge according to by close to dredging, by dredging close or being distributed to close mode again to dredging by close.The present invention is conducive to current density uniformity in reaction chamber, plays the uniformity effect improving chip surface gas, the gas density of arrival chip surface is distributed and reaches unanimity.
Description
Technical field
The present invention relates to plasma etching, deposition apparatus technical field, be specifically related to a kind of even gas dish be applied in the air intake structure of plasma etching, deposition apparatus.
Background technology
In the plasma process such as etching and deposit, the even depressed structure of air inlet, not only determines pressure and the flow distribution of process gas, also has a significant impact for being uniformly distributed of plasma loading the generation of radio frequency starter, thus, affect the quality of process chip.
In etching technics, air intake structure, the general air inlet pipe that adopts directly passes into chamber, because the difference of air inlet pipe and chamber size is larger.Or, air inlet tube wall is processed some equally distributed apertures.After air inlet, pressure and the flow gradients of gas are larger.Like this, after radio frequency loads, the plasma uniformity consistency that starter obtains is difficult to ensure.During process chip, because of the even gas weak effect of air intake structure, chamber interior horizontal direction distribution of gas gradient is comparatively large, causes plasma uneven in the density distribution of chip surface, causes the uniformity of etching chip surface and etch rate inconsistent.
Summary of the invention
The object of the present invention is to provide a kind of even gas dish for air intake structure, in plasma process, realize gas pressure and uniform flow distribution, after starter, guarantee the surface in process chip, obtain the plasma of uniformity consistency.
In order to achieve the above object, the technical solution used in the present invention is:
For an even gas dish for air intake structure, described even gas dish distributes some apertures, described aperture from the center of described even gas dish to edge according to by close to dredging, by dredging close or being distributed to close mode again to dredging by close.
In such scheme, the diameter of described even gas dish is 1 ~ 5000mm, and thickness is 1 ~ 100mm, and the aperture on described even gas dish distributes in the diameter range of described even gas dish, and described hole diameter is 0.1 ~ 20mm.
In such scheme, the material of described even gas dish is nonmetallic materials, and described nonmetallic materials are engineering plastics, graphite, pottery, quartz, boron carbide or the carborundum such as polytetrafluoro, Merlon, PE.
In such scheme, the shape of the aperture on described even gas dish is circle, triangle, square or rhombus.
In such scheme, described even gas dish comprises sidewall and chassis, is provided with arrangement for adjusting height between described sidewall and described chassis.
In such scheme, the height adjustment range of described arrangement for adjusting height is 0.1 ~ 100mm.
In such scheme, described arrangement for adjusting height comprises fixed head and adjustment screw, described fixed head is fixed on described sidewall, described fixed head is provided with screwed hole, described sidewall is fixedly connected with described chassis through the screwed hole on described fixed head by described adjustment screw, and the relative altitude between described chassis and described sidewall is regulated by described adjustment screw.
Compared with prior art, the beneficial effect that the technical solution used in the present invention produces is as follows:
The present invention is conducive to current density uniformity in reaction chamber, plays the uniformity effect improving chip surface gas, the gas density of arrival chip surface is distributed and reaches unanimity.
Accompanying drawing explanation
The structural representation of the even gas dish that Fig. 1 provides for the embodiment of the present invention;
Fig. 2 is the structural representation of even gas dish sidewall in the embodiment of the present invention;
Fig. 3 is the structural representation that in the embodiment of the present invention, even gas dish sidewall is connected with chassis;
Fig. 4 is the structural representation embodiment of the present invention be applied in air intake structure.
Embodiment
Below in conjunction with drawings and Examples, technical solution of the present invention is described in detail.
As shown in Figure 1, the embodiment of the present invention provides a kind of even gas dish for air intake structure, even gas dish 5 distributes some apertures 51, aperture 51 distributes to close mode to dredging according to by close from the center of even gas dish 5 to edge again, the distribution mode of aperture 51 can make plasma when by even gas dish 5, improve the density at chip edge position, make the particle arriving chip more even.The diameter of even gas dish 5 is 1 ~ 5000mm, and thickness is 1 ~ 100mm, and the aperture 51 on even gas dish 5 distributes in the diameter range of even gas dish 5, and hole diameter is 0.1 ~ 20mm.The shape of the aperture 51 on even gas dish 5 is circle, triangle, square, rhombus or other shapes.The material of even gas dish 5 is the nonmetallic materials such as the engineering plastics such as polytetrafluoro, Merlon, PE, graphite, pottery, quartz, boron carbide or carborundum.
In the present embodiment, the distribution mode of the aperture 51 on even gas dish 5 can also Shi Cong center to edge by close to dredge or by dredging close distribution.
As shown in Figures 2 and 3, even gas dish 5 comprises sidewall 52 and chassis 55, sidewall 52 is uniformly distributed three fixed heads 53, chassis 55 is fixedly connected with sidewall 52 through the screwed hole 54 on fixed head 53 by adjustment screw 56, relative altitude between chassis 55 and sidewall 52 is regulated by the length of adjustment screw 56, the current density above arrival chip can be made to reach unanimity by the adjustment of height, the adjustable range of height is 0.1 ~ 100mm.Belong to excessive cooperation between sidewall 52 and chassis 55, guarantee to regulate sliding process to align up and down.
As shown in Figure 4, the even gas dish 5 that the embodiment of the present invention provides is applied in air intake structure, and air intake structure also comprises air inlet pipe 1 and even inflator 4, and air intake structure is arranged on above the reaction chamber of cavity top cover 2 and chamber 8 composition, is provided with radio frequency electrode 3 inside cavity top cover 2.Air inlet pipe 1 is fixedly installed in the middle part of cavity top cover 2, with cavity top cover 2 flange seal, air inlet pipe 1 end extends in the even inflator 4 in reaction chamber, even gas dish 5 is arranged on below even inflator 4, the sidewall of even gas dish 5 is fixed on inside cavity top cover 2, can regulate the height of chassis in reaction chamber by arrangement for adjusting height.Exhaust outlet 9 is arranged on chamber 8 lower end, and chip 6 to be placed in reaction chamber on slide holder 7.In etching process, be the even gas dish that embodiment provides owing to have employed the present invention, make the gas flow arriving chip 6 surface be tending towards even with sealing distribution, be conducive to the uniformity of plasma, guarantee the uniformity etching chip.
Operationally, process gas enters above reaction chamber by air inlet pipe 1 in the present invention, arrives even inflator 4, and then gas distribution 9 enters the space above even gas dish 5, then arrives slide holder 6 top; Final reaction product and some processes gas conflux and 10 to flow out from exhaust outlet 8.Regulate the setting height(from bottom) of even gas dish 5 in reaction chamber by arrangement for adjusting height, the current density above arrival chip can be made to reach unanimity.
The present invention is conducive to current density uniformity in reaction chamber, plays the uniformity effect improving chip surface gas, the gas density of arrival chip surface is distributed and reaches unanimity.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (2)
1. for an even gas dish for air intake structure, it is characterized in that: described even gas dish distributes some apertures, described aperture from the center of described even gas dish to edge according to by close to dredging, by dredging close or being distributed to close mode again to dredging by close; The diameter of described even gas dish is 1 ~ 5000mm, and thickness is 1 ~ 100mm, and the aperture on described even gas dish distributes in the diameter range of described even gas dish, and described hole diameter is 0.1 ~ 20mm; The material of described even gas dish is nonmetallic materials, and described nonmetallic materials are engineering plastics, graphite, pottery, quartz, boron carbide or carborundum; The shape of the aperture on described even gas dish is circle, triangle, square or rhombus; Described even gas dish comprises sidewall and chassis, is provided with arrangement for adjusting height between described sidewall and described chassis; Described arrangement for adjusting height comprises fixed head and adjustment screw, described fixed head is fixed on described sidewall, described fixed head is provided with screwed hole, described sidewall is fixedly connected with described chassis through the screwed hole on described fixed head by described adjustment screw, and the relative altitude between described chassis and described sidewall is regulated by described adjustment screw.
2., as claimed in claim 1 for the even gas dish of air intake structure, it is characterized in that: the height adjustment range of described arrangement for adjusting height is 0.1 ~ 100mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110388396.8A CN102437002B (en) | 2011-11-29 | 2011-11-29 | A kind of even gas dish for air intake structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110388396.8A CN102437002B (en) | 2011-11-29 | 2011-11-29 | A kind of even gas dish for air intake structure |
Publications (2)
| Publication Number | Publication Date |
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| CN102437002A CN102437002A (en) | 2012-05-02 |
| CN102437002B true CN102437002B (en) | 2015-12-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110388396.8A Active CN102437002B (en) | 2011-11-29 | 2011-11-29 | A kind of even gas dish for air intake structure |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448770B (en) * | 2014-07-25 | 2018-05-08 | 北京北方华创微电子装备有限公司 | For the inlet duct of semiconductor equipment and using its reaction chamber |
| CN104492353A (en) * | 2014-12-11 | 2015-04-08 | 中国核动力研究设计院 | Water seal annular porous uniform gas allocation system for inflammable gas |
| CN107785283B (en) * | 2016-08-24 | 2020-07-17 | 北京北方华创微电子装备有限公司 | Heating chamber and semiconductor processing equipment |
| CN109341967A (en) * | 2018-12-13 | 2019-02-15 | 北方民族大学 | A kind of air-tightness detection device and its application method of air inlet mechanical structure |
| CN112192154A (en) * | 2020-09-30 | 2021-01-08 | 靖江先锋半导体科技有限公司 | Processing technology of gas spraying disc for etching machine |
| CN115029775A (en) * | 2021-03-05 | 2022-09-09 | 中国电子科技集团公司第四十八研究所 | Epitaxial growth equipment with gas flowing horizontally |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100447248B1 (en) * | 2002-01-22 | 2004-09-07 | 주성엔지니어링(주) | Gas diffusion plate for use in ICP etcher |
| US7270713B2 (en) * | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
| CN1848368A (en) * | 2005-12-02 | 2006-10-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma etching device capable of raising etching uniformity |
| KR101078506B1 (en) * | 2006-03-28 | 2011-10-31 | 세키스이가가쿠 고교가부시키가이샤 | Surface processing apparatus |
| CN101207001B (en) * | 2006-12-22 | 2010-05-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Exhaust device and reaction chamber containing the same |
| CN101488446B (en) * | 2008-01-14 | 2010-09-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus and gas dispensing apparatus thereof |
| CN201215800Y (en) * | 2008-04-15 | 2009-04-01 | 上海华虹Nec电子有限公司 | Upper electrode for semiconductor etching device |
| CN101748377B (en) * | 2010-01-07 | 2011-11-23 | 中国科学院半导体研究所 | Reaction chamber of metal organism chemical deposition equipment |
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| CN102437002A (en) | 2012-05-02 |
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