CN201681788U - Reaction chamber part and plasma processing device employing same - Google Patents
Reaction chamber part and plasma processing device employing same Download PDFInfo
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- CN201681788U CN201681788U CN2010201512729U CN201020151272U CN201681788U CN 201681788 U CN201681788 U CN 201681788U CN 2010201512729 U CN2010201512729 U CN 2010201512729U CN 201020151272 U CN201020151272 U CN 201020151272U CN 201681788 U CN201681788 U CN 201681788U
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- reaction chamber
- chamber parts
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Abstract
The utility model provides a reaction chamber part and a plasma processing device employing the reaction chamber part. The reaction cavity part is applicable to the plasma processing device, and the plasma processing device comprises a reaction chamber and a base platform in the reaction chamber, an edge ring and a plasma confining device are sequentially arranged on the periphery of the base platform in the reaction chamber, an exhaust end under the plasma confining device is arranged in the reaction chamber and is used for exhausting the gas in the reaction chamber through the exhaust end, the reaction chamber part is arranged along the periphery of the edge ring, and the reaction chamber part at least partially covers the surface of the plasma confining device facing the interior of the reaction chamber. The reaction chamber part enhances the protecting effect on the plasma confining device during operation, reduces the damage to the plasma confining device, reduces the production cost and also improves the qualified rate of substrates.
Description
Technical field
The utility model relates to the semiconductor-fabricating device technical field, relates in particular to a kind of reaction chamber parts and uses the plasma processing apparatus of these reaction chamber parts.
Background technology
In the manufacture process of semiconductor device, usually need be on the semiconductor-based end cambium layer structure, then to layer structure treatment to form required pattern.
Be illustrated in figure 1 as the structural representation of plasma processing apparatus, general plasma treatment appts comprises the reaction chamber 1 of cylindrical or other shapes, be provided with the base station 3 that is used to place processed substrate 2 in the bottom of this reaction chamber 1, be provided with electric pole plate 4 at the top of reaction chamber 1, this electric pole plate 4 and base station 3 be oppositely arranged and and base station 3 between form plasma generating space, by between electric pole plate 4 and base station 3 (as lower electrode plate), applying radio-frequency voltage, make the gas that feeds in the reaction chamber 1 form plasma, and then can handle the processed substrate 2 that is placed on the base station 3, in this device, also comprise plasm restraint device 5, be used for when gas is detached reaction chamber 1, with plasma confinement above this plasma restraint device, between base station 3 and plasm restraint device 5, also be provided with edge ring 6, its effect is the electric field line that influences edge between electric pole plate 4 and the base station 3, make it point to processed substrate 2 near vertical direction, thereby improve the distribution of plasma, make the plasma distribution of base station 3 edges even.
In the plasma processing apparatus of said structure, the material that plasm restraint device adopts usually is metals such as aluminium, this plasma restraint device can be subjected to the ion bombardment corrosion on the surface of orientating reaction chamber in this device course of work, and the generation aluminium ion, in order to prevent the corrosion of article on plasma body restraint device, can carry out processing such as oxidation to above-mentioned surface, yet, in the long-time use of this device, having metallic particles under the ion bombardment in reaction chamber splashes or is diffused on the wafer of processing, after the oxide layer on plasm restraint device surface is destroyed, more be easy to generate and contain aluminum particulate, a large amount of aluminum particulates drift to the top of base station attached to the damage that not only can accelerate plasm restraint device on the processed substrate greatly, increase production cost, and can make on the processed substrate and adhere to pollutant, cause processed substrate yield to reduce.
The utility model content
The utility model provides a kind of reaction chamber parts and uses the plasma processing apparatus of these reaction chamber parts; can be in the course of work of plasma processing apparatus; strengthen the protective effect of article on plasma body restraint device; and improve the product yield, improved homogeneity simultaneously the treatment effect of the processed substrate on the base station.
In order to solve the problems of the technologies described above, the technical solution of the utility model is:
The utility model provides a kind of reaction chamber parts, be applied in the plasma processing apparatus, described plasma processing apparatus comprises reaction chamber and is positioned at the base station of described reaction chamber, periphery at described base station in described reaction chamber radially is disposed with edge ring and plasm restraint device, one exhaust end that is positioned at described plasm restraint device below also is set in the described reaction chamber, be used for the gas in the described reaction chamber is discharged from described exhaust end, described reaction chamber parts are provided with along the periphery of described edge ring, and described reaction chamber parts to small part covers the surface towards described reaction chamber inside of described plasm restraint device.
Further, described reaction chamber parts are fixedlyed connected with described edge ring and are integral or fit tightly.
Further, at the place that fits tightly of described reaction chamber parts and described edge ring, has angle between the sidewall of the described edge ring of the sidewall of described reaction chamber parts and vicinity.
Further, the thickness of described reaction chamber parts diminishes on the direction that with described base station is sensing base station periphery, center gradually.
Further, the surface towards described reaction chamber inside of described reaction chamber parts is the curved surface of projection or the curved surface of depression.
Further, have at least one on the described reaction chamber parts and be used for hole or groove described reaction chamber and described plasm restraint device conducting.
Further, described reaction chamber parts comprise at least two annulus concentric with described base station, have the annular space that is used for described reaction chamber and described plasm restraint device conducting between the described annulus.
Further, the material of described reaction chamber parts is dielectric material or conductor material or semi-conducting material.
Further, the material of described reaction chamber parts is quartz or SiC.
The utility model also provides a kind of plasma processing apparatus, comprise reaction chamber and the base station that is positioned at described reaction chamber, periphery at described base station in described reaction chamber radially is disposed with edge ring and plasm restraint device, one exhaust end that is positioned at described plasm restraint device below also is set in the described reaction chamber, be used for the gas in the described reaction chamber is discharged from described exhaust end, described plasma processing apparatus also comprises reaction chamber parts that are provided with along the periphery of described edge ring, and described reaction chamber parts to small part covers the surface towards described reaction chamber inside of described plasm restraint device.
Further, described reaction chamber parts are fixedlyed connected with described edge ring and are integral or fit tightly.
Further, at the place that fits tightly of described reaction chamber parts and described edge ring, has angle between the sidewall of the described edge ring of the sidewall of described reaction chamber parts and vicinity.
Further, the thickness of described reaction chamber parts diminishes on the direction that with described base station is sensing base station periphery, center gradually.
Further, the surface towards described reaction chamber inside of described reaction chamber parts is the curved surface of projection or the curved surface of depression.
Further, have at least one on the described reaction chamber parts and be used for hole or groove described reaction chamber and described plasm restraint device conducting.
Further, described reaction chamber parts comprise at least two annulus concentric with described base station, have the annular space that is used for described reaction chamber and described plasm restraint device conducting between the described annulus.
Further, the material of described reaction chamber parts is dielectric material or conductor material or semi-conducting material.
Further, the material of described reaction chamber parts is quartz or SiC.
The utility model carries out partial occlusion by the surface that reaction chamber parts article on plasma body restraint device orientating reaction chamber interior is set, reduced the bombardment probability of the ion pair plasm restraint device of generation in the reaction chamber greatly, thereby significantly reduced the amount of ions that the bombardment plasma restraint device produces, and stopped effectively the ion drift that produces to the top of base station attached on the processed substrate.These reaction chamber parts are in the course of work of plasma processing apparatus; strengthened the protective effect of article on plasma body restraint device; reduced the damage of article on plasma body restraint device; reduced production cost; and reduced the pollutant that adheres on the processed substrate, improved the yield of processed substrate.
And, by this reaction chamber parts are set, the edge that has prolonged base station is to the distance that is exposed to the plasm restraint device in the reaction chamber, make the gas in the reaction chamber need walk around above-mentioned reaction chamber parts, process plasma confinement ring is taken away by gas extraction system again, thereby has changed the distribution of base station edge top plasma, reduced the changing value of this position plasma density, improved homogeneity the treatment effect of the processed substrate on the base station.
Description of drawings
In order to be illustrated more clearly in the technical scheme of the utility model embodiment, the accompanying drawing of required use is done an introduction simply in will describing embodiment below, apparently, accompanying drawing in describing below only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structural representation of prior art ionic medium body processing unit;
Fig. 2 is a structural representation of using the plasma processing apparatus of a kind of reaction chamber parts of the utility model;
Fig. 3 a is the structural representation of the another kind of reaction chamber parts of the utility model;
Fig. 3 b is the structural representation of the another kind of reaction chamber parts of the utility model;
Fig. 4 is a structural representation of using the plasma processing apparatus of another reaction chamber parts of the utility model;
Fig. 5 a is the vertical view of the internal structure of plasma processing apparatus shown in Figure 4;
Fig. 5 b is the vertical view of another structure of the internal structure of plasma processing apparatus;
Fig. 6 is the structural representation of a kind of plasma processing apparatus of the utility model.
Embodiment
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, embodiment of the present utility model is described in detail below in conjunction with accompanying drawing.
A lot of details have been set forth in the following description so that fully understand the utility model, but the utility model can also adopt other to be different from alternate manner described here and implement, so the utility model is not subjected to the restriction of following public specific embodiment.
Secondly, the utility model is described in detail in conjunction with schematic diagram, when the utility model embodiment is described in detail in detail; for ease of explanation; the profile of indication device structure can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of the utility model protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
With reference to Fig. 2, be the structural representation of the plasma processing apparatus of using a kind of reaction chamber parts of the utility model.
In the present embodiment, these reaction chamber parts are applied in the plasma processing apparatus, this device can comprise reaction chamber 21, be provided with base station 22, edge ring 23 and plasm restraint device 24 in these reaction chamber 21 bottoms, edge ring 23 and plasm restraint device 24 are between the madial wall of the lateral wall of base station 22 and reaction chamber 21.Position relation between base station 21, edge ring 23 and the plasm restraint device 24 is: radially (also promptly pointed to the direction of base station periphery by the base station center) around the periphery of base station 22 and be disposed with edge ring 23 and plasm restraint device 24; If the surface with orientating reaction chamber 21 inside is a upper surface, the upper surface of base station 22 and edge ring 23 can be roughly equal, or the upper surface of base station 22 is lower slightly, so that after placing processed substrate, the upper surface of processed substrate is equal with the upper surface of edge ring 23, and the upper surface of plasm restraint device 24 is lower than the upper surface of edge ring 23.One exhaust end that is positioned at these plasma restraint device 24 belows also is set in the reaction chamber 21, be used for the gas in the reaction chamber 21 is discharged from exhaust end, wherein, when plasm restraint device 24 is used for gas in exhaust end is extracted reaction chamber 21 out, with the plasma confinements of generations in the reaction chamber 21 above plasm restraint device 24.More than setting is similar with prior art, repeats no more herein.
By on the surface 241 of plasm restraint device 24, reaction chamber parts 25 being set, partial occlusion is carried out on surface 241, reduced the bombardment probability of the ion pair plasm restraint device 24 of generation in the reaction chamber 21 greatly, thereby significantly reduced the metallic quantity that bombardment plasma restraint device 24 produces, and stopped effectively the ion drift that produces to the top of base station attached on the processed substrate.Reaction chamber parts 25 are in the course of work of plasma processing apparatus; strengthened the protective effect of article on plasma body restraint device 24; reduced the damage of article on plasma body restraint device 24; reduced production cost; and reduced the pollutant that adheres on the processed substrate, improved processed substrate yield.
In the present embodiment, reaction chamber parts 25 can be provided with along the periphery of edge ring 23, both upper surfaces can be roughly equal, reaction chamber parts 25 can fit tightly with edge ring 23, specifically can be as shown in Figure 2, the sidewall 251 of reaction chamber parts 25 fits tightly with the sidewall 231 of contiguous edge ring 23; Perhaps in another embodiment, fit tightly the place, have certain angle between the sidewall 231 of the edge ring 23 of the sidewall 251 of reaction chamber parts 25 and vicinity in reaction chamber parts 25 and 23 of edge ring.In another embodiment, reaction chamber parts 25 and edge ring 23 can the split settings, can be provided with less space between the sidewall 231 of the sidewall 251 of reaction chamber parts 25 and the edge ring 23 of being close to.In the present embodiment, the thickness of reaction chamber parts 25 can diminish on the direction that with base station 22 is sensing base station 22 peripheries, center gradually, and for example the upper surface of reaction chamber parts 25 is a plane inclined.In another embodiment, shown in Fig. 3 a, 3b, the surface of reaction chamber parts 25 orientating reaction chamber interior can comprise the curved surface 252 of projection, or the curved surface 253 of depression, wherein, the curved surface of depression can make gas flow more smooth and easy when the gas in the gas extraction system abstraction reaction chamber.
Gas extraction system is extracted gas out through plasm restraint device in the prior art from reaction chamber, because base station edge and plasm restraint device distance are very near, the plasma density of base station edge top can suddenly reduce, cause the processing that is placed on the processed substrate on the base station inhomogeneous, reaction chamber parts 25 fit tightly with edge ring 23 in the present embodiment, and reaction chamber parts 25 not exclusively cover the surface 241 of plasm restraint device 24, make and still be in conducting state between plasm restraint device 24 and the reaction chamber 21, thereby gas extraction system can be walked around gas reaction chamber parts 25 and extract out from reaction chamber 21 through plasm restraint device 24, simultaneously, plasm restraint device 24 with plasma confinement above it.By reaction chamber parts 25 are set, the edge that has prolonged base station 22 is to the distance that is exposed to the plasm restraint device 24 in the reaction chamber 21, thereby changed the distribution of base station 22 edges top plasmas, reduced the changing value of this position plasma density, improved homogeneity the treatment effect of the processed substrate on the base station.
With reference to Fig. 4, be the structural representation of the plasma processing apparatus of using another reaction chamber parts of the utility model.
In the present embodiment, the reaction chamber parts are positioned at the bottom of device reaction chamber 41, this reaction chamber 41 is cylindrical or other shapes, also be provided with the base station 42 that is used to place processed substrate and edge ring 43, plasm restraint device 44 in these reaction chamber 41 bottoms, edge ring 43 and plasm restraint device 44 are between the madial wall of the lateral wall of base station 42 and reaction chamber 41, base station 42, edge ring 43, plasm restraint device 44, three's position relation is similar with previous embodiment, repeats no more herein.One exhaust end that is positioned at these plasma restraint device 44 belows also is set in the reaction chamber 41, be used for the gas in the reaction chamber 41 is discharged from exhaust end, wherein, when plasm restraint device 44 is used for gas in exhaust end is extracted reaction chamber 41 out, with the plasma confinements of generations in the reaction chamber 41 above plasm restraint device 44.
These reaction chamber parts 45 are provided with along the periphery of edge ring 43, reaction chamber parts 45 are fixedlyed connected with edge ring 43 and are integral, concrete, the sidewall of reaction chamber parts 45 is consolidated with the sidewall of the edge ring 43 of vicinity, during fabrication, these reaction chamber parts 45 and edge ring 43 can be used as unified parts, processing and manufacturing simultaneously or as the shaping of producing once of parts.Reaction chamber parts 45 not exclusively cover 441 tops, surface of orientating reaction chamber 41 inside of plasm restraint device 44, and promptly surface 441 parts of plasm restraint device 44 are exposed in the reaction chamber 41.
The thickness of reaction chamber parts 45 can diminish on the direction that with base station 42 is sensing base station 42 peripheries, center gradually.The surface of orientating reaction chamber 41 inside of reaction chamber parts 45 can be an inclined-plane, or the curved surface of projection, or the curved surface of depression.
Carry out partial occlusion by the surface 441 that reaction chamber parts 45, article on plasma body restraint device 44 are set, reduced the bombardment probability of the ion pair plasm restraint device 44 of generation in the reaction chamber 41 greatly, thereby significantly reduced the amount of ions that bombardment plasma restraint device 44 produces, and stopped effectively the ion drift that produces to the top of base station attached on the processed substrate.Reaction chamber parts 45 are in the course of work of plasma processing apparatus; strengthened the protective effect of article on plasma body restraint device 44; reduced the damage of article on plasma body restraint device 44; reduced production cost; and reduced the pollutant that adheres on the processed substrate, improved processed substrate yield.
And, reaction chamber parts 45 are fixedlyed connected with edge ring 43, and reaction chamber parts 45 not exclusively cover the surface 441 of plasm restraint device 44, make and still be in conducting state between plasm restraint device 44 and the reaction chamber 41, thereby gas extraction system can be walked around gas reaction chamber parts 45 and extract out from reaction chamber 41 through plasm restraint device 44, and plasm restraint device 44 with plasma confinement above it.These reaction chamber parts 45 have prolonged the edge of base station 42 to the distance that is exposed to the plasm restraint device 44 in the reaction chamber 41, thereby changed the distribution of base station 42 edges top plasmas, reduced the changing value of this position plasma density, improved treatment effect the processed substrate on the base station.
But, therefore above-mentioned reaction chamber parts have also reduced the operating efficiency of gas extraction system, make gas extraction system smoothly gas to be taken away from reaction chamber, in following examples, for of the influence of compensatory reaction chamber parts, on the reaction chamber parts, can also be provided with at least one and be used for the hole of reaction chamber and plasm restraint device conducting or groove etc. to gas extraction system.
Be depicted as the vertical view of reaction chamber parts in the present embodiment as Fig. 5 a, if the reaction chamber of plasma treatment appts 41 be shaped as cylinder, then be disposed with edge ring 43, reaction chamber parts 45 in circular base station 42 peripheries, reaction chamber parts 45 not exclusively cover plasm restraint device 44, wherein, reaction chamber parts 45 comprise at least two annulus 451,452 concentric with base station 42, have the annular space 453 that is used for reaction chamber 41 and plasm restraint device 44 conductings between the annulus 451,452.
Be depicted as the vertical view of reaction chamber parts among another embodiment as Fig. 5 b, be disposed with edge ring 43, reaction chamber parts 45 in circular base station 41 peripheries, reaction chamber parts 45 not exclusively cover plasm restraint device 44, wherein, reaction chamber parts 45 are provided with several circular holes 454 that are used for reaction chamber 41 and plasm restraint device 44 conductings.Of course it is to be understood that these several circular holes 454 also can adopt other execution modes, that is, several circular holes 454 are replaced by several passages of other shapes, can be that several are evenly distributed or uneven finedraw etc. such as, passage.
Reaction chamber parts in the present embodiment are not only in the course of work of plasma processing apparatus; strengthened the protective effect of article on plasma body restraint device; reduce production cost, reduced the pollutant that adheres on the processed substrate, improved processed substrate yield.And, changed the distribution of base station edge top plasma, reduced the changing value of this position plasma density, improved treatment effect to the processed substrate on the base station.
The material of reaction chamber parts can be dielectric material in the various embodiments described above, or conductor material, or semi-conducting material, for example quartz or SiC etc.
More than technical characterictic among each embodiment can reconfigure as required, and be not limited only to above-mentioned two embodiment, repeat no more herein.
With reference to Fig. 6, be the structural representation of a kind of plasma processing apparatus of the utility model.
This plasma processing unit comprises reaction chamber 61 and is positioned at the base station 62 of reaction chamber 61 bottoms, between the madial wall of the lateral wall of base station 62 and reaction chamber 61, be provided with edge ring 63 and plasm restraint device 64, edge ring 63 and plasm restraint device 64 also are positioned at the bottom of reaction chamber 61, three's position relation is similar with previous embodiment, repeats no more herein.
In the present embodiment, reaction chamber parts 65 can be provided with along the periphery of edge ring 63, reaction chamber parts 65 can be fixedlyed connected or the split setting with edge ring 63, and for example reaction chamber parts 65 fit tightly with the sidewall of edge ring 63, have angle etc. between this perhaps close two side.The thickness of reaction chamber parts 65 can diminish on the direction that with base station 62 is sensing base station 62 peripheries, center gradually, and the surface of orientating reaction chamber 61 inside of reaction chamber parts 65 is the curved surface of projection or the curved surface of depression.
At least one can be set on the reaction chamber parts 65 be used for hole or groove reaction chamber 61 and plasm restraint device 64 conductings; Perhaps, reaction chamber parts 65 can comprise at least two annulus concentric with base station 62, have the annular space that is used for reaction chamber 61 and plasm restraint device 64 conductings between the annulus.Reaction chamber parts 65 in the present embodiment can be similar with the reaction chamber parts in the previous embodiment, repeats no more herein.
The material of reaction chamber parts can be dielectric material in the various embodiments described above, or conductor material, or semi-conducting material, for example quartz or SiC etc.
Reaction chamber parts in this plasma processing unit not only in the device course of work, have strengthened the protective effect of article on plasma body restraint device, have reduced production cost, have reduced the pollutant that adheres on the processed substrate, have improved processed substrate yield.And, changed the distribution of base station edge top plasma, reduced the changing value of this position plasma density, improved treatment effect to the processed substrate on the base station.
Above-described the utility model execution mode does not constitute the qualification to the utility model protection range.Each technical characterictic in the foregoing description can be selected combination as required.Any modification of within spirit of the present utility model and principle, being done, be equal to and replace and improvement etc., all should be included within the claim protection range of the present utility model.
Claims (13)
1. reaction chamber parts, be applied in the plasma processing apparatus, described plasma processing apparatus comprises reaction chamber and is positioned at the base station of described reaction chamber, periphery at described base station in described reaction chamber radially is disposed with edge ring and plasm restraint device, one exhaust end that is positioned at described plasm restraint device below also is set in the described reaction chamber, be used for the gas in the described reaction chamber is discharged from described exhaust end, it is characterized in that, described reaction chamber parts are provided with along the periphery of described edge ring, and described reaction chamber parts to small part covers the surface towards described reaction chamber inside of described plasm restraint device.
2. reaction chamber parts according to claim 1 is characterized in that, described reaction chamber parts are fixedlyed connected with described edge ring and are integral or fit tightly.
3. reaction chamber parts according to claim 1 is characterized in that, the thickness of described reaction chamber parts diminishes on the direction that with described base station is sensing base station periphery, center gradually.
4. reaction chamber parts according to claim 1 is characterized in that, the surface towards described reaction chamber inside of described reaction chamber parts is the curved surface of projection or the curved surface of depression.
5. according to any described reaction chamber parts in the claim 1 to 4, it is characterized in that having at least one on the described reaction chamber parts and be used for hole or groove with described reaction chamber and described plasm restraint device conducting.
6. according to any described reaction chamber parts in the claim 1 to 4, it is characterized in that, described reaction chamber parts comprise at least two annulus concentric with described base station, have the annular space that is used for described reaction chamber and described plasm restraint device conducting between the described annulus.
7. according to any described reaction chamber parts in the claim 1 to 4, it is characterized in that the material of described reaction chamber parts is dielectric material or conductor material or semi-conducting material.
8. reaction chamber parts according to claim 7 is characterized in that, the material of described reaction chamber parts is quartz or SiC.
9. plasma processing apparatus, comprise reaction chamber and the base station that is positioned at described reaction chamber, periphery at described base station in described reaction chamber radially is disposed with edge ring and plasm restraint device, one exhaust end that is positioned at described plasm restraint device below also is set in the described reaction chamber, be used for the gas in the described reaction chamber is discharged from described exhaust end, it is characterized in that, described plasma processing apparatus also comprises reaction chamber parts that are provided with along the periphery of described edge ring, and described reaction chamber parts to small part covers the surface towards described reaction chamber inside of described plasm restraint device.
10. device according to claim 9 is characterized in that, described reaction chamber parts are fixedlyed connected with described edge ring and are integral or fit tightly.
11. device according to claim 9 is characterized in that, the thickness of described reaction chamber parts diminishes on the direction that with described base station is sensing base station periphery, center gradually.
12. device according to claim 9 is characterized in that, the surface towards described reaction chamber inside of described reaction chamber parts is the curved surface of projection or the curved surface of depression.
13., it is characterized in that having at least one on the described reaction chamber parts and be used for hole or groove or annular space according to any described device in the claim 9 to 12 with described reaction chamber and described plasm restraint device conducting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2010201512729U CN201681788U (en) | 2010-04-02 | 2010-04-02 | Reaction chamber part and plasma processing device employing same |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010201512729U CN201681788U (en) | 2010-04-02 | 2010-04-02 | Reaction chamber part and plasma processing device employing same |
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| CN201681788U true CN201681788U (en) | 2010-12-22 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543641A (en) * | 2012-01-20 | 2012-07-04 | 中微半导体设备(上海)有限公司 | Connector capable of realizing elastic contact of plasma etching cavity |
| CN103165374A (en) * | 2011-12-08 | 2013-06-19 | 中微半导体设备(上海)有限公司 | Plasma processing device and edge ring applied to the same |
| CN103171186A (en) * | 2011-12-20 | 2013-06-26 | 中微半导体设备(上海)有限公司 | Laminated type assembly used for plasma reaction chamber and manufacture method |
| CN107170660A (en) * | 2017-05-02 | 2017-09-15 | 惠科股份有限公司 | Dry etching apparatus and electrode of dry etching apparatus |
| CN109473333A (en) * | 2018-10-08 | 2019-03-15 | 深圳市华星光电半导体显示技术有限公司 | Etching machine |
| CN113838730A (en) * | 2020-06-08 | 2021-12-24 | 中微半导体设备(上海)股份有限公司 | Gas shield ring, plasma processing apparatus and method for regulating and controlling polymer distribution |
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2010
- 2010-04-02 CN CN2010201512729U patent/CN201681788U/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165374A (en) * | 2011-12-08 | 2013-06-19 | 中微半导体设备(上海)有限公司 | Plasma processing device and edge ring applied to the same |
| CN103171186A (en) * | 2011-12-20 | 2013-06-26 | 中微半导体设备(上海)有限公司 | Laminated type assembly used for plasma reaction chamber and manufacture method |
| CN103171186B (en) * | 2011-12-20 | 2015-06-10 | 中微半导体设备(上海)有限公司 | Laminated type assembly used for plasma reaction chamber and manufacture method |
| CN102543641A (en) * | 2012-01-20 | 2012-07-04 | 中微半导体设备(上海)有限公司 | Connector capable of realizing elastic contact of plasma etching cavity |
| CN102543641B (en) * | 2012-01-20 | 2015-07-08 | 中微半导体设备(上海)有限公司 | Connector capable of realizing elastic contact of plasma etching cavity |
| CN107170660A (en) * | 2017-05-02 | 2017-09-15 | 惠科股份有限公司 | Dry etching apparatus and electrode of dry etching apparatus |
| CN109473333A (en) * | 2018-10-08 | 2019-03-15 | 深圳市华星光电半导体显示技术有限公司 | Etching machine |
| CN109473333B (en) * | 2018-10-08 | 2021-03-16 | 深圳市华星光电半导体显示技术有限公司 | Etching machine |
| CN113838730A (en) * | 2020-06-08 | 2021-12-24 | 中微半导体设备(上海)股份有限公司 | Gas shield ring, plasma processing apparatus and method for regulating and controlling polymer distribution |
| CN113838730B (en) * | 2020-06-08 | 2024-05-14 | 中微半导体设备(上海)股份有限公司 | Gas shielding ring, plasma processing device and method for regulating and controlling polymer distribution |
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Denomination of utility model: Reaction chamber part and plasma processing device employing same Effective date of registration: 20150202 Granted publication date: 20101222 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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