CN102543641B - Connector capable of realizing elastic contact of plasma etching cavity - Google Patents
Connector capable of realizing elastic contact of plasma etching cavity Download PDFInfo
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- CN102543641B CN102543641B CN201210017825.5A CN201210017825A CN102543641B CN 102543641 B CN102543641 B CN 102543641B CN 201210017825 A CN201210017825 A CN 201210017825A CN 102543641 B CN102543641 B CN 102543641B
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- interface unit
- crimp head
- elastic contact
- ground connection
- plasma etch
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Abstract
A connector capable of realizing the elastic contact of a plasma etching cavity comprises a gasket groove and a sleeve in the gasket groove, as well as a ground ring which is arranged in the sleeve, in elastic contact with the sleeve and provided with a compression joint, wherein the ground ring with the compression joint is in elastic contact with the sleeve; and the connector further comprises O-shaped seal ring (s) arranged on one side or two sides of the ground ring. According to the connector provided by the invention, the RF (Radio Frequency) transmission in the plasma etching cavity is more stable, thereby obtaining stable RF distribution.
Description
Technical field
The present invention relates to a kind of semiconductor equipment, particularly relate to a kind of interface unit realizing plasma etch chamber Elastic Contact.
Background technology
As shown in Figure 1, it is the cross-sectional view of plasma etch chamber, dotted line OO ' in figure is the axle center of whole cavity devices, device in cavity mostly is cylinder or torus is arranged, in plasma etch chamber 100 (as shown in Figure 1), bottom electrode 5 is arranged on base support/platform 7(simultaneously also as cooling bench) on, bottom electrode 5 is as negative electrode, bottom electrode 5 is provided with electrostatic chuck 3, and substrate 1 to be etched is arranged on electrostatic chuck 3, negative electrode passes into high-frequency radio frequency (RF) power, can with top electrode capacitive coupling, alternating electric field is produced between two electrodes, this electric field can ionize the reacting gas thus formation plasma that pass into etching reaction chamber 100.Gas passage is formed between pedestal (comprising electrostatic chuck 3, bottom electrode 5 and base support/platform 7) and reaction chamber inwall, plasma is utilized to etch substrate 1, reacted plasma passes through plasma containment device 11(simultaneously as exhaust apparatus), discharge etching reaction chamber through exhaust gas region 8.Bottom electrode RF shield 9(can comprise 9a and 9b, be electrically connected between 9 a and 9b) be arranged in bottom electrode 5, space between base support/platform 7 and cavity, bottom electrode RF shield 9 is connected with cathodic electricity, bottom electrode RF shield 9b is annular ring, screw or bolt 51 are for fixing bottom electrode RF shield 9b, bottom electrode RF shield 9a, 9b is conductor material, as aluminium.Electric Field Distribution between upper/lower electrode determines the distribution of plasma concentration, also just determines the distribution of etch rate.RF power is except being coupled to the parts also having Partial Power coupling except top electrode or be transmitted to other ground connection, as the etching reaction chamber sidewall 13 of ground connection and the support portion 13a of etching reaction chamber sidewall, or the ring of ground connection in other etching reaction chamber, as the ground loop (upper ground ring) around top electrode.RF power division can change along with the impedance variation of parts different in negative electrode to etching reaction chamber to different grounded partss, and these impedances can change along with the change of the many factors such as temperature, gaseous species, plasma concentration, poor electric contact, rf frequency, harmonic components, these impedances that can not stop to change can cause the change of RF distribution in etching reaction chamber, also plasma concentration will be caused not stop change, so be difficult to carry out debugging obtain homogeneous treatment effect.Obtain stable Electric Field Distribution will uncontrollable above-mentioned factor be controlled as far as possible.
Summary of the invention
A kind of interface unit realizing plasma etch chamber Elastic Contact provided by the invention, ensure that in plasma etch chamber, the transmission of RF is more stable, obtains stable RF distribution.
In order to achieve the above object, the invention provides a kind of interface unit realizing plasma etch chamber Elastic Contact, this interface unit is arranged in plasma etch chamber, be made up of electric conducting material, one end of this interface unit is fixed and is electrically connected to the negative electrode in reaction cavity, this negative electrode is connected to radio-frequency power supply, the other end of this interface unit is fixed to the reaction chamber inwall of ground connection, this interface unit and reaction chamber inwall form an electric interface, described interface unit comprises a gasket groove, be arranged on the lining in gasket groove, and to be arranged in lining and to enclose with the ground connection with crimp head of lining Elastic Contact, there is the Elastic Contact between the ground connection circle of crimp head and lining, ensure that contact-making surface can ground connection well, thus ensure that the transmission of RF is more stable, obtain stable RF distribution.
The described ground connection circle with crimp head is for pin-shaped, and it comprises crimp head and top.
The described crimp head part with the ground connection circle of crimp head is arranged in lining.
Described lining has elasticity.
Described lining adopt argent or copper silver-plated.
Described having between the ground connection circle of crimp head and lining adopts sleeve connected mode.
The described ground connection circle with crimp head adopts metallic aluminium.
The described crimp head part with the ground connection circle of crimp head is coated with conductive coating layer.
Described conductive coating layer is nickel or gold.
The described top section with the ground connection circle of crimp head carries out anodized surface process.
The described surface-coated silicon fluoride of top section with the ground connection circle of crimp head or the rubber of fluorine silicon.
This interface unit also comprises the O-ring seals of the one or both sides being arranged on the ground connection circle with crimp head, and described O-ring seals is arranged in seal groove.
Described O-ring seals is for corrosion-resistantly providing fluorubber or the fluosilicic rubber of tight function.
A kind of plasma processor, described plasma processor comprises a reaction chamber, a pedestal and a reacting gas distribution apparatus is comprised in reaction chamber, a negative electrode be connected with radio-frequency power supply is comprised in pedestal, the interface unit that electric conducting material is made is fixed between pedestal and reaction chamber inwall, wherein the first end of interface unit is connected with cathodic electricity, second end of interface unit is fixed with reaction chamber inwall and realizes being electrically connected on an electrical contact interface, the first end of the interface unit that described electric conducting material is made comprises a crimp head, the outer surface of crimp head has resilient, conductive member, second end of described interface unit comprises a conductive trench and crimp head form fit two surface conjunctions and forms stable electrical and be connected.
This invention ensures that in plasma etch chamber, the transmission of RF is more stable, obtain stable RF distribution.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of plasma etch chamber in background technology.
Fig. 2 is a kind of structural representation realizing the interface unit of plasma etch chamber Elastic Contact provided by the invention;
Fig. 3 is a kind of structural representation with the ground connection circle of crimp head realizing the interface unit of plasma etch chamber Elastic Contact provided by the invention.
Embodiment
Following according to Fig. 2 and Fig. 3, illustrate preferred embodiment of the present invention.
As shown in Figure 2, the invention provides a kind of interface unit realizing plasma etch chamber Elastic Contact, this interface unit is arranged in plasma etch chamber, and this interface unit comprises ground connection circle 101, lining 102 and the O RunddichtringO 103 with crimp head.
As shown in Figure 3, the described ground connection circle 101 with crimp head is for pin-shaped, and it comprises crimp head 1011 and top 1012.
As shown in Figure 2, described lining 102 is arranged in the gasket groove 1 of plasma etch chamber inwall, and lining 102 has elasticity.
Described lining 102 adopts metal to make, as silver or copper silver-plated.
Described crimp head 1011 part with the ground connection circle 101 of crimp head is arranged in lining 102, Elastic Contact between crimp head 1011 and lining 102.
The described ground connection circle 101 with crimp head is electrically connected with bottom electrode RF shield 9, this has the Elastic Contact between the ground connection circle 101 of crimp head and lining 102, ensure that contact-making surface can ground connection well, thus ensure that the transmission of RF is more stable, obtain stable RF distribution.
Described having between the ground connection circle 101 of crimp head and lining 102 adopts sleeve connected mode, and without the need to using screw to carry out dismounting, the power needed when ground connection circle 101 inserts or extract lining 102 is less, fast more convenient during maintenance.
The described ground connection circle 101 with crimp head adopts metal to make, as aluminium.
Described crimp head 1011 part with the ground connection circle 101 of crimp head is coated with conductive coating layer, can nickel coating or gold, 101 oxidized and reduce electric conductivity to prevent the ground connection with crimp head from enclosing.
Described top 1012 part with the ground connection circle 101 of crimp head has carried out anodized surface process, is coated with the rubber of silicon fluoride or fluorine silicon, protective earthing circle 101 not bombard by plasma.
Described O-ring seals 103 is arranged on the one or both sides of the ground connection circle 101 with crimp head, or this O-ring seals 103 is arranged on around in the seal groove of crimp head, is fixed and clamped.This O-ring seals 103 is arranged on the both sides of the ground connection circle 101 with crimp head, provides the airtight reacting gas be etched in cavity with the conductive coating layer on the ground connection preventing from having crimp head circle 101 to corrode.
Described O-ring seals 103 for the elastomeric material of tight function corrosion-resistantly can be provided, such as fluorubber or fluosilicic rubber.
A kind of plasma processor, described plasma processor comprises a reaction chamber, a pedestal and a reacting gas distribution apparatus is comprised in reaction chamber, a negative electrode be connected with radio-frequency power supply is comprised in pedestal, the interface unit that electric conducting material is made is fixed between pedestal and reaction chamber inwall, wherein the first end of interface unit is connected with cathodic electricity, second end of interface unit is fixed with reaction chamber inwall and realizes being electrically connected on an electrical contact interface, the first end of the interface unit that described electric conducting material is made comprises a crimp head, the outer surface of crimp head has resilient, conductive member, second end of described interface unit comprises a conductive trench, described conductive trench and crimp head form fit, the outer surface of described crimp head and the surface conjunction of conductive trench form stable electrical and are connected.
Plasma chamber Elastic Contact interface unit provided by the invention except aforementioned combined and realized elasticity by crimp head and resilient bushing 102 and be connected except, also elastic conducting material can be fixed on parts crimp head being formed ground connection circle 101 to match with corresponding below gasket groove 1, now electrically conductive elastic lining can be had also can not have lining 102 in gasket groove 1.Such sidewall has the inner wall shape that the crimp head of elastic conducting material and lower slots have a satisfactory electrical conductivity and matches, wherein elastic conducting material can select the material identical with aforementioned flexible lining, also can plate the coat strengthening power down performance inside conductive trench.This structure still can realize the goal of the invention of elasticity of the present invention electrical connection, belongs to the present invention and protects content.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (12)
1. one kind realizes the interface unit of plasma etch chamber Elastic Contact, this interface unit is arranged in plasm reaction cavity, be made up of electric conducting material, one end of this interface unit is fixed and is electrically connected to the negative electrode in reaction chamber, one end of this interface unit electrical connection negative electrode is that looping corral is around negative electrode, this negative electrode is connected to radio-frequency power supply, the other end of this interface unit is fixed to the reaction chamber inwall of ground connection, this interface unit and reaction chamber inwall form an electric interface, it is characterized in that, described interface unit comprises a gasket groove (1), be arranged on the lining (102) in gasket groove (1), and to be arranged in lining (102) and to enclose (101) with the ground connection with crimp head of lining (102) Elastic Contact, there is the Elastic Contact between ground connection circle (101) of crimp head and lining (102), ensure that contact-making surface can ground connection well, thus ensure that the transmission of RF is more stable, obtain stable RF distribution.
2. realize the interface unit of plasma etch chamber Elastic Contact as claimed in claim 1, it is characterized in that, described ground connection circle (101) with crimp head is for pin-shaped, and it comprises crimp head (1011) and top (1012).
3. realize the interface unit of plasma etch chamber Elastic Contact as claimed in claim 2, it is characterized in that, described crimp head (1011) part with ground connection circle (101) of crimp head is arranged in lining (102).
4. realize the interface unit of plasma etch chamber Elastic Contact as claimed in claim 1, it is characterized in that, described lining (102) has elasticity.
5. realize the interface unit of plasma etch chamber Elastic Contact as claimed in claim 2, it is characterized in that, described lining (102) adopt argent or copper silver-plated.
6. realize the interface unit of plasma etch chamber Elastic Contact as claimed in claim 1, it is characterized in that, described having between ground connection circle (101) of crimp head and lining (102) adopts sleeve connected mode.
7. realize the interface unit of plasma etch chamber Elastic Contact as claimed in claim 1, it is characterized in that, described ground connection circle (101) with crimp head adopts metallic aluminium.
8. realize the interface unit of plasma etch chamber Elastic Contact as claimed in claim 2, it is characterized in that, described crimp head (1011) part with ground connection circle (101) of crimp head is coated with conductive coating layer.
9. realize the interface unit of plasma etch chamber Elastic Contact as claimed in claim 8, it is characterized in that, described conductive coating layer is nickel or gold.
10. realize the interface unit of plasma etch chamber Elastic Contact as claimed in claim 2, it is characterized in that, described top (1012) part with ground connection circle (101) of crimp head carries out anodized surface process.
11. interface units realizing plasma etch chamber Elastic Contact as claimed in claim 10, is characterized in that, the described surface-coated silicon fluoride of top (1012) part with ground connection circle (101) of crimp head or the rubber of fluorine silicon.
12. 1 kinds of plasma processors, described plasma processor comprises a reaction chamber, a pedestal and a reacting gas distribution apparatus is comprised in reaction chamber, a negative electrode be connected with radio-frequency power supply is comprised in pedestal, the interface unit that electric conducting material is made is fixed between pedestal and reaction chamber inwall, wherein the first end of interface unit is connected with cathodic electricity, one end of this interface unit electrical connection negative electrode is that looping corral is around negative electrode, second end of interface unit is fixed with reaction chamber inwall and realizes being electrically connected on an electrical contact interface, the first end of the interface unit that described electric conducting material is made comprises a crimp head, the outer surface of crimp head has resilient, conductive member, second end of described interface unit comprises a conductive trench, described conductive trench and crimp head form fit, the outer surface of described crimp head and the surface conjunction of conductive trench form stable electrical and are connected.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210017825.5A CN102543641B (en) | 2012-01-20 | 2012-01-20 | Connector capable of realizing elastic contact of plasma etching cavity |
| TW101110043A TW201332008A (en) | 2012-01-20 | 2012-03-23 | Connector to realize elastic contact with plasma etching chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210017825.5A CN102543641B (en) | 2012-01-20 | 2012-01-20 | Connector capable of realizing elastic contact of plasma etching cavity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102543641A CN102543641A (en) | 2012-07-04 |
| CN102543641B true CN102543641B (en) | 2015-07-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210017825.5A Active CN102543641B (en) | 2012-01-20 | 2012-01-20 | Connector capable of realizing elastic contact of plasma etching cavity |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102543641B (en) |
| TW (1) | TW201332008A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111383892B (en) * | 2018-12-29 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | Grounding connection structure of gas spray header in plasma processing device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101478857A (en) * | 2008-01-04 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma treatment apparatus |
| CN201503847U (en) * | 2009-07-03 | 2010-06-09 | 中微半导体设备(上海)有限公司 | Plasma processing device |
| CN201681788U (en) * | 2010-04-02 | 2010-12-22 | 中微半导体设备(上海)有限公司 | Reaction chamber part and plasma processing device employing same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020170678A1 (en) * | 2001-05-18 | 2002-11-21 | Toshio Hayashi | Plasma processing apparatus |
| TW586335B (en) * | 2001-10-31 | 2004-05-01 | Applied Materials Inc | Plasma etch reactor with dual sources for enhancing both etch selectivity and etch rate |
| US7469715B2 (en) * | 2005-07-01 | 2008-12-30 | Applied Materials, Inc. | Chamber isolation valve RF grounding |
| US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
| KR101091309B1 (en) * | 2009-08-18 | 2011-12-07 | 주식회사 디엠에스 | Plasma etching device |
-
2012
- 2012-01-20 CN CN201210017825.5A patent/CN102543641B/en active Active
- 2012-03-23 TW TW101110043A patent/TW201332008A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101478857A (en) * | 2008-01-04 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma treatment apparatus |
| CN201503847U (en) * | 2009-07-03 | 2010-06-09 | 中微半导体设备(上海)有限公司 | Plasma processing device |
| CN201681788U (en) * | 2010-04-02 | 2010-12-22 | 中微半导体设备(上海)有限公司 | Reaction chamber part and plasma processing device employing same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201332008A (en) | 2013-08-01 |
| CN102543641A (en) | 2012-07-04 |
| TWI467652B (en) | 2015-01-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |