CN113838730B - Gas shielding ring, plasma processing device and method for regulating and controlling polymer distribution - Google Patents
Gas shielding ring, plasma processing device and method for regulating and controlling polymer distribution Download PDFInfo
- Publication number
- CN113838730B CN113838730B CN202010512729.2A CN202010512729A CN113838730B CN 113838730 B CN113838730 B CN 113838730B CN 202010512729 A CN202010512729 A CN 202010512729A CN 113838730 B CN113838730 B CN 113838730B
- Authority
- CN
- China
- Prior art keywords
- ring
- gas
- substrate
- gas shielding
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012545 processing Methods 0.000 title claims abstract description 54
- 229920000642 polymer Polymers 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 26
- 230000001276 controlling effect Effects 0.000 title abstract description 9
- 230000001105 regulatory effect Effects 0.000 title abstract description 5
- 239000007789 gas Substances 0.000 claims abstract description 132
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 238000006243 chemical reaction Methods 0.000 claims abstract description 57
- 239000012495 reaction gas Substances 0.000 claims abstract description 21
- 238000002347 injection Methods 0.000 claims abstract description 9
- 239000007924 injection Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims description 48
- 125000006850 spacer group Chemical group 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 230000001965 increasing effect Effects 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Polymerisation Methods In General (AREA)
- Materials For Medical Uses (AREA)
Abstract
The invention discloses a gas shielding ring, a plasma processing device and a method for regulating and controlling polymer distribution, wherein the equipment comprises the following components: and a vacuum reaction cavity, wherein a base for bearing the substrate is arranged in the vacuum reaction cavity. And the gas injection device is used for conveying the reaction gas into the vacuum reaction cavity. The plasma confinement ring is arranged around the periphery of the base, and is provided with an exhaust channel which comprises an inner ring exhaust area close to the base and an outer ring exhaust area close to the side wall of the vacuum reaction cavity and is used for exhausting the reaction gas in the vacuum reaction cavity. And the gas shielding ring is positioned above the exhaust area of the inner ring of the plasma confinement ring and is used for guiding the reaction gas to flow to the exhaust area of the outer ring of the plasma confinement ring. The invention can be used for balancing the difference of polymers generated at the center and the edge of the cavity, thereby reducing the overall morphology and absolute diameter difference of the etched sample.
Description
Technical Field
The invention relates to the technical field of semiconductor processing equipment, in particular to a gas shielding ring, a plasma processing device and a method for regulating and controlling polymer distribution.
Background
With the increase of the chip manufacturing cost and the rapid development of the industry, the effective utilization area of the wafer is particularly important.
It is found that in the plasma etching chamber (vacuum reaction chamber), the plasma, the chemical reaction gas, the temperature distribution are uneven, and the like, which causes the whole wafer to be uneven in the etching process, so that the whole wafer cannot be effectively utilized. This non-uniformity is mainly the gas path within the vacuum chamber along the wafer or Edge of the substrate 3, which can cause differences in plasma and polymer distribution in the Center (Center) and Edge (Edge) regions of the wafer.
Disclosure of Invention
The invention aims to provide a gas shielding ring, a plasma processing device and a method for regulating and controlling polymer distribution, so as to realize the purposes of balancing polymer differences generated by the center and the edge of a cavity, enabling the edge of a wafer to be still in a uniform region of plasma and polymer and reducing the overall shape and absolute diameter of an etched sample.
In order to achieve the above object, the present invention is realized by the following technical scheme:
a plasma processing apparatus, comprising: and the vacuum reaction cavity is internally provided with a base for bearing the substrate. And the gas injection device is used for conveying the reaction gas into the vacuum reaction cavity. The plasma confinement ring is arranged around the periphery of the base, and is provided with an exhaust channel, wherein the exhaust channel comprises an inner ring exhaust area close to the base and an outer ring exhaust area close to the side wall of the vacuum reaction cavity and is used for exhausting the reaction gas in the vacuum reaction cavity. And the gas shielding ring is positioned above the exhaust area of the inner ring of the plasma confinement ring and is used for guiding the reaction gas to flow to the exhaust area of the outer ring of the plasma confinement ring.
Preferably, a distance between the gas shield ring and an inner ring exhaust region of the plasma confinement ring is adjustable.
Preferably, the radial width of the gas shield ring is greater than 0 and less than the radial width of the plasma confinement ring.
Preferably, the radial width of the gas shield ring is greater than 0 and less than or equal to two-thirds of the radial width of the plasma confinement ring.
Preferably, the gas shielding ring comprises a plurality of arc-shaped parts, and the arc-shaped parts form the gas shielding ring.
Preferably, the material of the gas shielding ring is ceramic or quartz.
Preferably, the plurality of arc-shaped parts are correspondingly supported by a plurality of lifters; one end of each lifter is correspondingly connected with one arc-shaped part, and the other end of each lifter is mounted on the bottom wall of the vacuum reaction cavity;
each lifter is used for controlling the arc-shaped part to move in the vertical direction according to preset lifting requirements.
Preferably, the lifter is electrically or pneumatically controlled.
Preferably, a spacer ring is arranged between the plasma confinement ring and the base, and a cover ring is arranged above the spacer ring and connected with the gas shielding ring.
Preferably, the lower surface of the gas barrier ring is not higher than the upper surface of the cover ring.
Preferably, the gas barrier ring is fixed at the periphery of the cover ring.
Preferably, the gas barrier ring is integrally formed with the cover ring.
In another aspect, the present invention provides a gas baffle ring for a plasma processing apparatus, the plasma processing apparatus including a susceptor and a focus ring disposed around the susceptor, the susceptor having a plasma confinement ring disposed around a periphery thereof, the gas baffle ring comprising: an inner ring and an outer ring; the outer ring is fixed on the outer side surface of the inner ring and is integrally manufactured with the inner ring, the inner ring is arranged around the focusing ring, the outer ring is positioned above the plasma confinement ring, and at least part of the outer ring covers the exhaust area of the plasma confinement ring.
In other aspects, the invention also provides a method of modulating polymer distribution comprising: when the etching requirement of the substrate is deep holes or deep grooves with the etching depth-to-width ratio being more than 50%, the position of a gas shielding ring of the plasma processing device is adjusted, and the top surface of the gas shielding ring is flush with the top surface of the cover ring.
And when the etching requirement on the substrate is that the depth-to-width ratio of etching is more than 10% and less than 50% of deep holes or grooves, adjusting the position of the gas shielding ring, wherein the top surface of the gas shielding ring is positioned in the middle of the side wall of the cover ring.
And when the etching requirement on the substrate is shallow grooves with the etching depth-to-width ratio smaller than 10%, adjusting the position of the gas shielding ring, wherein the top surface of the gas shielding ring is flush with the bottom surface of the side wall of the cover ring.
Compared with the prior art, the invention has at least one of the following advantages:
The present invention provides a plasma processing apparatus, comprising: and the vacuum reaction cavity is internally provided with a base for bearing the substrate. And the gas injection device is used for conveying the reaction gas into the vacuum reaction cavity. The plasma confinement ring is arranged around the periphery of the base, and is provided with an exhaust channel, wherein the exhaust channel comprises an inner ring exhaust area close to the base and an outer ring exhaust area close to the side wall of the vacuum reaction cavity and is used for exhausting the reaction gas in the vacuum reaction cavity. And the gas shielding ring is positioned above the exhaust area of the inner ring of the plasma confinement ring and is used for guiding the reaction gas to flow to the exhaust area of the outer ring of the plasma confinement ring. The addition of the gas barrier ring may be used to balance the differences in polymer created by the center and edges of the chamber. The existence of the gas shielding ring enables the gas path (polymer path) to extend outwards farther, so that the edge of the wafer (substrate) is still in a homogenized area of plasma and polymer, and the polymer generated in the vacuum reaction cavity can remain on the side wall of the groove or the deep hole, thereby being beneficial to reducing the overall shape and the absolute diameter of an etched sample, and therefore, the protection of the polymer is important in the plasma reaction process.
Drawings
FIG. 1 is a schematic view of a vacuum chamber of a plasma processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of a control ring of a plasma processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic view of a main structure of a plasma processing apparatus according to an embodiment of the present invention when a control ring is located at a middle position;
FIG. 4 is a schematic view of a main structure of a control ring of a plasma processing apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic diagram showing the distribution of gas paths when the control ring of the plasma processing apparatus is at a high position according to an embodiment of the present invention;
FIG. 6 is a schematic diagram showing the comparative effect of polymer deposition on the wafer surface after processing the wafer by the plasma processing apparatus according to an embodiment of the present invention and after processing the wafer by the plasma processing apparatus without the adjusting ring in the prior art;
FIG. 7 is a schematic view of a control ring of a plasma processing apparatus according to another embodiment of the present invention;
FIG. 8 is a schematic view of a control ring of a plasma processing apparatus according to another embodiment of the present invention;
FIG. 9 is a schematic view of a control ring of a plasma processing apparatus according to another embodiment of the present invention;
FIG. 10 is a schematic diagram of a control ring of a plasma processing apparatus according to another embodiment of the present invention;
FIG. 11 is a graph showing the effect of the change in Critical Dimension (CD) and Etch Rate (ER) of a tuning ring of a plasma processing apparatus according to another embodiment of the present invention.
Detailed Description
The gas baffle ring, the plasma processing apparatus and the method for controlling polymer distribution according to the present invention are described in further detail below with reference to fig. 1 to 11 and the detailed description. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the invention. For a better understanding of the invention with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the invention to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the invention, are included in the spirit and scope of the invention which is otherwise, without departing from the spirit or essential characteristics thereof.
In accordance with a first embodiment, as shown in fig. 1 to 6, the present embodiment provides a plasma processing apparatus including: a vacuum reaction chamber in which a susceptor 100 for carrying a substrate 300 is disposed. And the gas injection device is used for conveying the reaction gas into the vacuum reaction cavity. The plasma confinement ring 800 is disposed around the periphery of the susceptor 100, and an exhaust channel is disposed on the plasma confinement ring 800, and the exhaust channel includes an inner ring exhaust area near the susceptor 100 and an outer ring exhaust area near the sidewall of the vacuum reaction chamber, for exhausting the reaction gas in the vacuum reaction chamber. A gas shield ring 701 is positioned above the inner ring exhaust region of the plasma confinement ring 800 for guiding the flow of the reactant gas to the outer ring exhaust region of the plasma confinement ring 800.
For ease of understanding, the structure of the vacuum reaction chamber and the specific structure of the gas injection device will be briefly described by taking the capacitively coupled plasma processing device as an example.
With continued reference to fig. 1 and 2, the vacuum reaction chamber is formed by enclosing a plurality of walls (such as a side wall 110, a top wall 111 and a bottom wall); the vacuum reaction chamber is provided with a space inside. The vacuum reaction chamber may be evacuated. Other parts of the reaction chamber, except the gas inlet, the gas outlet, and the substrate 300 in-out passage, remain closed and isolated from the outside during processing. The gas inlet is connected to an external gas source for continuously supplying reactant gases to the vacuum reaction chamber during processing. The gas injection means is provided on the top wall 111, and specifically, the gas injection means includes: a mounting substrate 112 disposed on an inner surface of the top wall 111; a gas shower head 101 disposed on the mounting substrate 112 and communicating with the gas inlet for supplying a reaction gas to the vacuum reaction chamber.
The exhaust port is connected with an external pump and is used for exhausting waste gas generated in the treatment process out of the vacuum reaction cavity and controlling the air pressure in the vacuum reaction cavity.
The vacuum reaction chamber is also provided with a base 100 disposed opposite to the gas shower head 101, an electrostatic chuck 200 (as shown in fig. 2) disposed on the base 100, the gas shower head 120 is used as an upper electrode of the vacuum reaction chamber, the electrostatic chuck 200 is used as a lower electrode of the vacuum reaction chamber, and a reaction area is formed between the upper electrode and the lower electrode. At least one radio frequency power supply is applied to one of the upper electrode or the lower electrode through a matching network, a radio frequency electric field is generated between the upper electrode and the lower electrode, the radio frequency power supply is used for dissociating reaction gas into plasma, the plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active particles can react with the surface of the substrate to be processed in a plurality of physical and chemical ways, so that the shape of the surface of the substrate is changed, and the etching process is completed.
In this embodiment, a spacer ring 600 is disposed between the plasma confinement ring 800 and the susceptor 100, a cover ring 700 is disposed above the spacer ring 600, and the cover ring 700 is connected to the gas shielding ring 701. The gas barrier ring 701 is disposed at the outer periphery of the cover ring 700.
Preferably, in the present embodiment, the lower surface of the gas shielding ring 701 is not higher than the upper surface of the cover ring 700. Specifically, according to different processes, when the etching requirement on the substrate 300 is deep holes or deep grooves with an etching depth-to-width ratio greater than 50%, the gas shielding ring 701 is flush with the cover ring 800, i.e., the top surface of the gas shielding ring 701 is flush with the top surface of the cover ring 700 (the gas shielding ring is located at a high position), so that the polymer (neutral radical) in the edge area needs to diffuse in the horizontal direction to the outer ring exhaust area of the plasma confinement ring 800 through the gas shielding ring 701 before being exhausted from the reaction chamber through the plasma confinement ring 800, thereby reducing the speed of exhausting the polymer (neutral radical) out of the reaction chamber, ensuring the concentration of the polymer (neutral radical) in the edge area participating in the substrate processing, and improving the etching uniformity of the edge area of the substrate 300 and the center area of the substrate 300.
When the etching requirement on the substrate 300 is that the depth-to-width ratio of etching is greater than 10% and less than 50% of deep holes or trenches, the concentration requirement on polymer (neutral radical) by the etching process is less than that of the etching process with the depth-to-width ratio of greater than 50%, at this time, the gas shielding ring 701 may be adjusted downward so that it is located at the middle of the side edge of the cover ring 700, that is, the top surface of the gas shielding ring 701 is located at the middle of the side wall of the cover ring 700 (the gas shielding ring is located at the middle position), and in this position, the shielding degree of the polymer (neutral radical) by the gas shielding ring is slightly lower than that when the gas shielding ring is located at the high position, so that the polymer is discharged out of the reaction chamber slightly quickly, and the etching uniformity of the edge region of the substrate 300 and the central region of the substrate 300 is improved.
When the etching requirement on the substrate 300 is a shallow trench with an etching depth-to-width ratio less than 10%, the gas shielding ring 701 is located at the bottom of the sidewall of the cover ring 700, and the top surface of the gas shielding ring 701 is flush with the bottom surface of the sidewall of the cover ring 700 (the gas shielding ring is located at a low position), at this time, the amount of polymer required by the etching process is high, the depth-to-width ratio process is less, and the shielding effect of the gas shielding ring 701 on the polymer can be reduced by locating the gas shielding ring 701 at the low position, so that the etching uniformity of the edge region of the substrate 300 and the central region of the substrate 300 is improved. As shown in fig. 5, the curve pointed by the arrow O represents the polymer thickness distribution inside the plasma processing apparatus at the center of the substrate 300 and the edge of the substrate 300 without adding the gas barrier ring 701; the curve pointed by arrow W represents the polymer thickness distribution of the plasma processing apparatus at the center of the substrate 300 and at the distance from the substrate 300 when the gas barrier ring 701 is included; it can be seen that when the plasma processing apparatus including the gas baffle ring is used to process the substrate 300, the polymer concentration at the edge of the substrate 300 is increased, and the concentration of the entire polymer in the reaction chamber is increased, so that the etching rate at the edge of the substrate 300 can be increased, the absolute diameter difference between the center of the substrate 300 and the edge of the substrate 300 can be reduced, and the etching rate of the substrate can be increased as a whole. The structural or topographical differences caused by etching of the center of the substrate 300 and the edges of the substrate 300 are optimized.
In some embodiments, the gas barrier ring 701 is integrally formed with the cover ring 700, thereby facilitating replacement and installation. In the case where the gas barrier ring 701 is provided, plasma and polymer distribution is wider, and thus heat transfer is easier, and thus, the addition of the gas barrier ring 701 causes the temperature in the vacuum reaction chamber to be reduced.
The distance between the gas shield ring 701 and the inner ring exhaust region of the plasma confinement ring 800 is adjustable.
The radial width of the gas baffle ring 701 is greater than 0 and less than the radial width of the plasma confinement ring 800.
The radial width of the gas shield ring 701 is greater than 0 and less than or equal to two-thirds of the radial width of the plasma confinement ring 800.
When the gas shielding ring 701 is at the same height as the top surface of the cover ring 701, the distribution of the reaction gas and the plasma in the vacuum reaction chamber can be adjusted by increasing or decreasing the radial width of the gas shielding ring 701, so that the distribution of the polymer or the plasma is more uniform.
Preferably, the material of the gas shielding ring 701 is ceramic or quartz. The material of the gas barrier ring 701 can resist corrosion and improve its service life.
As shown in fig. 1 to 2, the plasma processing apparatus according to the present embodiment further includes: a focus ring 500 and an edge ring 400 are disposed around the susceptor 100, and the focus ring 500 and the edge ring 400 are used to adjust an electric field or a temperature distribution around the substrate 300, thereby improving uniformity of processing of the substrate 300. The spacer ring 600 is positioned on the edge ring 400 and surrounds the focus ring 500. The plasma confinement ring 800 surrounds the edge ring 400, and a bottom ground ring 900 is provided around the plasma confinement ring 800.
It is understood that the gas shielding ring provided in the present embodiment is applicable to various types of plasma processing apparatuses, such as a capacitive coupled plasma processing apparatus (CCP) and an inductive coupled plasma processing apparatus (ICP), and the present invention is not limited thereto.
In a second embodiment, referring to fig. 7 to 11, the present embodiment provides a plasma processing apparatus including all the structures described in the first embodiment, which is different from the first embodiment in the following points:
The gas shielding ring 701 can be adjusted in an on-line position through the lifter 702, so that the height of the gas shielding ring can be adjusted according to process requirements without opening a reaction cavity. The waste time of opening and closing the reaction cavity can be saved, and the throughput of substrate processing can be improved.
In order to adjust the substrate processing rate at different phase angles, the present embodiment may further provide that the gas shielding ring 701 includes a plurality of arc portions 7010, where the plurality of arc portions 7010 form the gas shielding ring 701, that is, the plurality of arc portions 7010 are connected end to form the gas shielding ring 701.
The plurality of arc-shaped parts 7010 are correspondingly supported by a plurality of lifters 702; one end of each lifter 702 is correspondingly connected with a mounting part 7011 of one arc-shaped part 7010, and the other end of each lifter is mounted on the bottom wall of the vacuum reaction cavity; each of the lifters 702 is configured to control the arc 7010 to move in a vertical direction according to a preset lifting requirement. The lifter 702 is electrically or pneumatically controlled. The embodiment can independently adjust the heights of different arc-shaped parts so as to meet the adjustment of the etching rate of the substrate in different phase angle areas.
When the etching requirement of the substrate 300 is deep holes or deep grooves with an etching depth-to-width ratio greater than 50%, the position of the gas shielding ring is adjusted, and the top surface of the gas shielding ring 701 is flush with the top surface of the cover ring 700, so that the polymer is uniformly distributed at the edge of the substrate and the center of the substrate.
When the etching requirement on the substrate 300 is that the depth-to-width ratio of etching is greater than 10% and less than 50% of deep holes or grooves, the position of the gas shielding ring 701 is adjusted, and the top surface of the gas shielding ring 701 is located in the middle of the sidewall of the cover ring 700, so that the polymer is uniformly distributed at the edge of the substrate and the center of the substrate.
When the etching requirement of the substrate is a shallow groove with an etching depth-to-width ratio of less than 10%, the position of the gas shielding ring is adjusted, and the top surface of the gas shielding ring 701 is flush with the bottom surface of the side wall of the cover ring 700, so that the polymer is uniformly distributed at the edge of the substrate and the center of the substrate.
It will be appreciated that the height of the arc 7010 may be dynamically adjusted to adjust the plasma concentration at the edge of the substrate corresponding to the arc 7010, depending on the etching requirements of different portions of the substrate 300. Thereby, the height of the gas barrier ring 701 can be more conveniently adjusted to observe its influence on the distribution of the reaction gas or plasma inside the vacuum reaction chamber. An increase in etch rate at the edge of the substrate 300 may thereby be achieved, reducing the absolute diameter or critical dimension (critical dimension, CD) difference between the center of the substrate 300 and the edge of the substrate 300. The structural or topographical differences caused by etching of the center of the substrate 300 and the edges of the substrate 300 are optimized.
As shown in fig. 11, in the absence of the gas baffle ring 701, the absolute diameters of the substrate edge and the substrate center (the difference is the largest, the sidewall polymer of the substrate edge has poor protective ability; and the etching rates (ETCHING RATE, ER) of the substrate edge and the substrate center are substantially uniform.
With the change of the position of the gas shielding ring 701, the difference of CD gradually decreases, and when the top surface of the gas shielding ring 701 is in high agreement with the top surface of the cover ring (the gas shielding ring is located at a high position), the CD difference between the center of the substrate and the edge of the substrate is basically disappeared, which means that the gas shielding ring 701 has the advantages of controlling the distribution of the polymer in the vacuum reaction cavity, protecting the morphology of the edge structure of the substrate, and simultaneously, no obvious change of etching rate.
Meanwhile, the distribution of the polymer can be controlled to different degrees for different positions of the gas shielding ring 701 (for example, the gas shielding ring is positioned at the middle position and the low position), and the gas shielding ring can be used for different processes.
It is known that the CD difference generated by the difference of the distribution of the polymers at the center of the substrate and the edge of the substrate can be eliminated by changing the position of the gas shielding ring adjusting ring without affecting the etching rate at the center of the substrate and the edge of the substrate.
On the other hand, based on the same inventive concept, the present invention also provides a gas shielding ring for a plasma processing apparatus, comprising: an inner ring and an outer ring; the outer ring is fixed on the outer side surface of the inner ring and is integrally manufactured with the inner ring. The inner ring may be the cover ring 700 mentioned in connection with the first embodiment.
In other aspects, based on the same inventive concept, the present invention also provides a method of modulating polymer distribution, comprising: when the etching requirement of the substrate is deep holes or deep grooves with the etching depth-to-width ratio being more than 50%, the position of the gas shielding ring of the plasma processing device is adjusted, and the top surface of the gas shielding ring is flush with the top surface of the cover ring, so that the polymer is uniformly distributed at the edge of the substrate and the center of the substrate.
And when the etching requirement on the substrate is that the depth-to-width ratio of etching is more than 10% and less than 50% of deep holes or grooves, adjusting the position of the gas shielding ring, wherein the top surface of the gas shielding ring is positioned in the middle of the side wall of the cover ring, so that the polymer is uniformly distributed at the edge of the substrate and the center of the substrate.
When the etching requirement on the substrate is shallow grooves with the etching depth-to-width ratio smaller than 10%, the position of the gas shielding ring is adjusted, and the top surface of the gas shielding ring is flush with the bottom surface of the side wall of the cover ring, so that the polymer is uniformly distributed at the edge of the substrate and the center of the substrate.
In summary, the present invention provides a plasma processing apparatus, comprising: and the vacuum reaction cavity is internally provided with a base for bearing the substrate. And the gas injection device is used for conveying the reaction gas into the vacuum reaction cavity. The plasma confinement ring is arranged around the periphery of the base, and is provided with an exhaust channel, wherein the exhaust channel comprises an inner ring exhaust area close to the base and an outer ring exhaust area close to the side wall of the vacuum reaction cavity and is used for exhausting the reaction gas in the vacuum reaction cavity. And the gas shielding ring is positioned above the exhaust area of the inner ring of the plasma confinement ring and is used for guiding the reaction gas to flow to the exhaust area of the outer ring of the plasma confinement ring. The addition of the gas barrier ring may be used to balance the differences in polymer created by the center and edges of the chamber. The existence of the gas shielding ring enables the gas path (polymer path) to extend outwards farther, so that the edge of the wafer (substrate) is still in a homogenized area of plasma and polymer, and the polymer generated in the vacuum reaction cavity can remain on the side wall of the groove or the deep hole, thereby being beneficial to reducing the overall shape and the absolute diameter of an etched sample, and therefore, the protection of the polymer is important in the plasma reaction process.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
In the description of the present invention, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate describing the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present invention, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "secured" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (9)
1. A plasma processing apparatus, comprising:
the vacuum reaction chamber is internally provided with a base for bearing a substrate;
the gas injection device is used for conveying reaction gas into the vacuum reaction cavity;
An edge ring surrounding the periphery of the base;
The plasma confinement ring is arranged around the periphery of the edge ring, and is provided with an exhaust channel, wherein the exhaust channel comprises an inner ring exhaust area close to the base and an outer ring exhaust area close to the side wall of the vacuum reaction chamber and is used for exhausting the reaction gas in the vacuum reaction chamber;
A gas shielding ring positioned above the inner ring exhaust region of the plasma confinement ring for guiding the flow of the reactant gas to the outer ring exhaust region of the plasma confinement ring;
an isolating ring is arranged between the plasma confinement ring and the base, the isolating ring is arranged on the edge ring, and a cover ring is arranged above the isolating ring;
The cover ring has a horizontal portion located on an upper surface of the spacer ring and a sidewall portion covering a sidewall of the spacer ring and a portion of the sidewall of the edge ring; the sidewall portion of the cover ring is connected to the gas shield ring;
The gas shielding ring is provided with a plurality of gas shielding rings, and the gas shielding rings are arranged on the upper surface of the horizontal part of the cover ring and the bottom surface of the side wall part.
2. The plasma processing apparatus of claim 1 wherein a distance between the gas shield ring and an inner ring exhaust region of the plasma confinement ring is adjustable.
3. The plasma processing apparatus of claim 1 wherein a radial width of the gas shield ring is greater than 0 and less than a radial width of the plasma confinement ring.
4. The plasma processing apparatus of claim 1 wherein the radial width of the gas shield ring is greater than 0 and less than or equal to two-thirds the radial width of the plasma confinement ring.
5. The plasma processing apparatus of claim 1 wherein the gas shield ring comprises a plurality of arcuate portions, the plurality of arcuate portions comprising the gas shield ring.
6. The plasma processing apparatus of claim 1 wherein the material of the gas shield ring is ceramic.
7. The plasma processing apparatus according to claim 5, wherein the plurality of arc-shaped portions are supported by a plurality of lifters, respectively; one end of each lifter is correspondingly connected with one arc-shaped part, and the other end of each lifter is mounted on the bottom wall of the vacuum reaction cavity;
each lifter is used for controlling the arc-shaped part to move in the vertical direction according to preset lifting requirements.
8. The plasma processing apparatus of claim 7 wherein the lifter is electrically or pneumatically controlled.
9. A method of modulating polymer distribution comprising:
Adjusting the position of a gas shielding ring of the plasma processing apparatus according to any one of claims 1 to 8 when the etching requirement on the substrate is deep holes or deep grooves with an etching depth-to-width ratio of more than 50%, wherein the top surface of the gas shielding ring is flush with the top surface of the horizontal part of the cover ring;
when the etching requirement on the substrate is that the depth-to-width ratio of etching is more than 10% and less than 50% of deep holes or grooves, adjusting the position of the gas shielding ring, wherein the top surface of the gas shielding ring is positioned in the middle of the side wall part of the cover ring;
And when the etching requirement on the substrate is shallow grooves with the etching depth-to-width ratio being smaller than 10%, adjusting the position of the gas shielding ring, wherein the top surface of the gas shielding ring is flush with the bottom surface of the side wall part of the cover ring.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010512729.2A CN113838730B (en) | 2020-06-08 | 2020-06-08 | Gas shielding ring, plasma processing device and method for regulating and controlling polymer distribution |
| TW110110059A TWI791202B (en) | 2020-06-08 | 2021-03-19 | Gas shielding ring, plasma processing device and method for regulating polymer distribution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010512729.2A CN113838730B (en) | 2020-06-08 | 2020-06-08 | Gas shielding ring, plasma processing device and method for regulating and controlling polymer distribution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113838730A CN113838730A (en) | 2021-12-24 |
| CN113838730B true CN113838730B (en) | 2024-05-14 |
Family
ID=78963561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010512729.2A Active CN113838730B (en) | 2020-06-08 | 2020-06-08 | Gas shielding ring, plasma processing device and method for regulating and controlling polymer distribution |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113838730B (en) |
| TW (1) | TWI791202B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114300336B (en) * | 2021-12-28 | 2024-02-23 | 拓荆科技股份有限公司 | Plasma reactor |
| CN115881506B (en) * | 2023-03-02 | 2023-06-27 | 深圳市新凯来技术有限公司 | Plasma adjusting device and semiconductor etching equipment |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1022263A (en) * | 1996-06-28 | 1998-01-23 | Sony Corp | Plasma etching device |
| JP2004342703A (en) * | 2003-05-13 | 2004-12-02 | Tokyo Electron Ltd | Device and method for plasma treatment |
| CN201681788U (en) * | 2010-04-02 | 2010-12-22 | 中微半导体设备(上海)有限公司 | Reaction chamber part and plasma processing device employing same |
| WO2011026127A2 (en) * | 2009-08-31 | 2011-03-03 | Lam Research Corporation | A local plasma confinement and pressure control arrangement and methods thereof |
| CN103187234A (en) * | 2011-12-30 | 2013-07-03 | 中微半导体设备(上海)有限公司 | Adjustable constraint device used for plasma processing device |
| KR20140049474A (en) * | 2012-10-16 | 2014-04-25 | 주식회사 엘지실트론 | Susceptor for epitaxial growth and epitaxial growth method |
| KR20140117890A (en) * | 2013-03-27 | 2014-10-08 | (주)이루자 | Apparatus of treating substrate, and methods of manufacturing substrate for electronic device and flat display device using the same |
| CN104704141A (en) * | 2012-10-18 | 2015-06-10 | 应用材料公司 | Shadow frame support |
| TW201606845A (en) * | 2014-05-12 | 2016-02-16 | Tokyo Electron Ltd | Plasma treatment device and exhaust structure thereof |
| TWM590776U (en) * | 2018-05-02 | 2020-02-11 | 美商應用材料股份有限公司 | Processing tool and flow conductance regulation system |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8236105B2 (en) * | 2004-04-08 | 2012-08-07 | Applied Materials, Inc. | Apparatus for controlling gas flow in a semiconductor substrate processing chamber |
| JP2006303309A (en) * | 2005-04-22 | 2006-11-02 | Hitachi High-Technologies Corp | Plasma treatment apparatus |
| US20130059448A1 (en) * | 2011-09-07 | 2013-03-07 | Lam Research Corporation | Pulsed Plasma Chamber in Dual Chamber Configuration |
| US9184028B2 (en) * | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
| US9184029B2 (en) * | 2013-09-03 | 2015-11-10 | Lam Research Corporation | System, method and apparatus for coordinating pressure pulses and RF modulation in a small volume confined process reactor |
-
2020
- 2020-06-08 CN CN202010512729.2A patent/CN113838730B/en active Active
-
2021
- 2021-03-19 TW TW110110059A patent/TWI791202B/en active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1022263A (en) * | 1996-06-28 | 1998-01-23 | Sony Corp | Plasma etching device |
| JP2004342703A (en) * | 2003-05-13 | 2004-12-02 | Tokyo Electron Ltd | Device and method for plasma treatment |
| WO2011026127A2 (en) * | 2009-08-31 | 2011-03-03 | Lam Research Corporation | A local plasma confinement and pressure control arrangement and methods thereof |
| CN201681788U (en) * | 2010-04-02 | 2010-12-22 | 中微半导体设备(上海)有限公司 | Reaction chamber part and plasma processing device employing same |
| CN103187234A (en) * | 2011-12-30 | 2013-07-03 | 中微半导体设备(上海)有限公司 | Adjustable constraint device used for plasma processing device |
| KR20140049474A (en) * | 2012-10-16 | 2014-04-25 | 주식회사 엘지실트론 | Susceptor for epitaxial growth and epitaxial growth method |
| CN104704141A (en) * | 2012-10-18 | 2015-06-10 | 应用材料公司 | Shadow frame support |
| KR20140117890A (en) * | 2013-03-27 | 2014-10-08 | (주)이루자 | Apparatus of treating substrate, and methods of manufacturing substrate for electronic device and flat display device using the same |
| TW201606845A (en) * | 2014-05-12 | 2016-02-16 | Tokyo Electron Ltd | Plasma treatment device and exhaust structure thereof |
| TWM590776U (en) * | 2018-05-02 | 2020-02-11 | 美商應用材料股份有限公司 | Processing tool and flow conductance regulation system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113838730A (en) | 2021-12-24 |
| TWI791202B (en) | 2023-02-01 |
| TW202147382A (en) | 2021-12-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI704845B (en) | Process chamber for cyclic and selective material removal and etching | |
| US7832354B2 (en) | Cathode liner with wafer edge gas injection in a plasma reactor chamber | |
| US8778813B2 (en) | Confined process volume PECVD chamber | |
| KR100446875B1 (en) | Vacuum processing apparatus | |
| TWI442837B (en) | Plasma processing device and plasma processing method | |
| JP5208206B2 (en) | Variable volume plasma processing chamber | |
| US5242539A (en) | Plasma treatment method and apparatus | |
| US6193836B1 (en) | Center gas feed apparatus for a high density plasma reactor | |
| KR20230112093A (en) | Upper electrode having varying thickness for plasma processing | |
| US11031262B2 (en) | Loadlock integrated bevel etcher system | |
| KR20010082162A (en) | Apparatus and method for plasma treatment | |
| CN113838730B (en) | Gas shielding ring, plasma processing device and method for regulating and controlling polymer distribution | |
| TWI777218B (en) | Plasma processor with movable ring | |
| US20130008604A1 (en) | Method and apparatus for enhancing flow uniformity in a process chamber | |
| KR102664176B1 (en) | Plasma processing apparatus | |
| KR20230024385A (en) | Asymmetric Exhaust Pumping Plate Design for Semiconductor Processing Chambers | |
| CN213583695U (en) | Plasma processing device | |
| JP7427108B2 (en) | Low resistance confinement liner for use in plasma chambers | |
| JP2019009403A (en) | Plasma processing method and plasma processing device | |
| CN114664622A (en) | Plasma processing device and adjusting method | |
| US20210183629A1 (en) | Ring assembly, substrate support assembly and substrate processing apparatus | |
| KR20240037737A (en) | Apparatus And Method for Treating Substrate | |
| KR20240037738A (en) | Apparatus And Method for Treating Substrate | |
| KR20030005494A (en) | Semiconductor manufactoring system including baffle plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |