TW202147382A - Gas blocking ring, plasma processing apparatus, and method for regulating polymer distribution in which the plasma processing apparatus includes a vacuum reaction chamber, a gas injection device, a plasma constraining ring, and a gas blocking ring - Google Patents

Abstract

The present invention discloses a gas blocking ring, a plasma processing apparatus, and a method for regulating polymer distribution. The plasma processing apparatus includes: a vacuum reaction chamber. A support is arranged in the vacuum reaction chamber for carrying a substrate. A gas injection device is provided for conveying a reactive gas into the vacuum reaction chamber. A plasma constraining ring is circumferentially arranged around a periphery of the support. The plasma constraining ring is provided with a gas draining channel that includes an inner-loop gas draining area that is close to the support and an outer-loop gas draining area that is close to a sidewall of the vacuum reaction chamber for draining the reactive gas from the vacuum reaction chamber. A gas blocking ring is located above the inner-loop gas draining area of the plasma constraining ring for guiding the reactive gas to flow toward the outer-loop gas draining area of the plasma constraining ring. The present invention is useful for balance of a difference of polymer between the center and the edge of the chamber so as to reduce differences in respect of overall configuration and absolute diameter of an etched sample.

Description

Gas shielding ring, plasma processing device, and method for regulating polymer distribution

The present invention relates to the technical field of semiconductor processing equipment, in particular to a gas shielding ring, a plasma processing device and a method for regulating polymer distribution.

With the increasing cost of wafer manufacturing and the rapid development of its industry, the effective use of wafer area is particularly important.

The study found that in the plasma etching chamber (vacuum reaction chamber), the uneven distribution of plasma, chemical reaction gas and temperature will cause unevenness in the etching process of the entire wafer, and the entire wafer cannot be effectively utilized. . This inhomogeneity is mainly due to the fact that the gas path in the cavity of the vacuum reaction chamber is along the edge of the wafer or the substrate, which will cause plasma and polymer distribution in the center and edge regions of the wafer. difference.

The purpose of the present invention is to provide a gas shielding ring, a plasma processing device and a method for regulating the distribution of polymers, so as to balance the difference of the polymers generated in the center and the edge of the cavity, so that the edge of the wafer is still in the plasma and the polymer. The purpose of homogenizing the area is to reduce the overall morphology and absolute diameter of the etched sample.

In order to achieve the above object, the present invention is realized through the following technical solutions:

A plasma processing device includes: a vacuum reaction chamber, wherein a base for carrying a substrate is arranged in the vacuum reaction chamber. A gas injection device is used for delivering reaction gas into the vacuum reaction chamber. The plasma confinement ring is arranged around the periphery of the base, and the plasma confinement ring is provided with an exhaust channel, including an inner circle exhaust area close to the base and an outer circle exhaust close to the side wall of the vacuum reaction chamber The region is used to discharge the reaction gas in the vacuum reaction chamber. The gas shielding ring is located above the exhaust area of the inner circle of the plasma confinement ring, and is used for guiding the reaction gas to flow to the exhaust area of the outer circle of the plasma confinement ring.

Preferably, the distance between the gas shielding ring and the exhaust area of the inner ring of the plasma confinement ring is adjustable.

Preferably, the radial width of the gas shielding ring is greater than 0 and less than the radial width of the plasma confinement ring.

Preferably, the radial width of the gas shielding ring is greater than 0 and less than or equal to two thirds of the radial width of the plasma confinement ring.

Preferably, the gas shielding ring includes a plurality of arc-shaped portions, and the plurality of arc-shaped portions constitute the gas shielding ring.

Preferably, the material of the gas shielding ring is ceramic or quartz.

Preferably, the plurality of arc-shaped portions are supported by a plurality of lifters correspondingly; one end of each of the lifters is correspondingly connected to one of the arc-shaped portions, and the other end thereof is mounted on the bottom of the vacuum reaction chamber. on the wall; Each of the lifters is used to control the arc-shaped portion to move in a vertical direction according to a preset lift requirement.

Preferably, the lifter is electrically controlled or pneumatically controlled.

Preferably, an isolation ring is arranged between the plasma confinement ring and the base, a cover ring is arranged above the isolation ring, and the cover ring is connected with the gas shielding ring.

Preferably, the lower surface of the gas shielding ring is not higher than the upper surface of the covering ring.

Preferably, the gas shield ring is fixed on the periphery of the cover ring.

Preferably, the gas shielding ring and the covering ring are made in one piece.

On the other hand, the present invention also provides a gas shielding ring for a plasma processing device, the plasma processing device includes a base and a focus ring arranged around the base, and a plasma is arranged around the base A confinement ring, comprising: an inner ring and an outer ring; the outer ring is fixed on the outer side of the inner ring and is made in one piece with the inner ring, the inner ring is arranged around the focusing ring, and the outer ring is It is located above the plasma confinement ring and at least partially covers the exhaust area of the plasma confinement ring.

In other aspects, the present invention also provides a method for regulating polymer distribution, comprising: when the etching requirement for the substrate is deep holes or deep grooves with an aspect ratio greater than 50%, adjusting the plasma position of the gas shielding ring of the body treatment device, the top surface of the gas shielding ring being flush with the top surface of the cover ring.

When the etching requirements for the substrate are deep holes or trenches with an etching aspect ratio greater than 10% and less than 50%, adjust the position of the gas shielding ring, and the top surface of the gas shielding ring is located at The middle part of the side wall of the cover ring.

When the etching requirement for the substrate is a shallow groove with an etching aspect ratio of less than 10%, the position of the gas shielding ring is adjusted, and the top surface of the gas shielding ring is flush with the bottom surface of the sidewall of the cover ring.

Compared with the prior art, the present invention has at least one of the following advantages:

The present invention provides a plasma processing device, comprising: a vacuum reaction chamber, wherein a base for carrying a substrate is arranged in the vacuum reaction chamber. A gas injection device is used for delivering reaction gas into the vacuum reaction chamber. The plasma confinement ring is arranged around the periphery of the base, and the plasma confinement ring is provided with an exhaust channel, including an inner circle exhaust area close to the base and an outer circle exhaust close to the side wall of the vacuum reaction chamber The region is used to discharge the reaction gas in the vacuum reaction chamber. The gas shielding ring is located above the exhaust area of the inner circle of the plasma confinement ring, and is used for guiding the reaction gas to flow to the exhaust area of the outer circle of the plasma confinement ring. The addition of the gas barrier ring can be used to balance the difference in polymer produced at the center and edge of the cavity. The existence of the gas shield ring makes the gas path (polymer path) extend farther out, so that the edge of the wafer (substrate) is still in the area of homogenization of plasma and polymer, which reacts in the vacuum The polymer generated in the cavity can remain on the sidewall of the trench or deep hole, which is beneficial to reduce the overall morphology and absolute diameter of the etched sample. Therefore, during the plasma reaction, the protection of the polymer is very important.

A gas shielding ring, a plasma treatment device and a method for regulating polymer distribution proposed by the present invention will be further described in detail below with reference to the accompanying drawings 1 to 11 and the specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the accompanying drawings are in a very simplified form and all use inaccurate scales, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention. For the purpose, features and advantages of the present invention to be more clearly understood, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings in this specification are only used to cooperate with the contents disclosed in the specification, so as to be understood and read by those who are familiar with the technology, and are not used to limit the implementation of the present invention. Therefore, it does not have technical substantive significance, and any modification of structure, change of proportional relationship or adjustment of size should still fall within the scope of the present invention without affecting the effect that the present invention can produce and the purpose that can be achieved. The scope of the disclosed technical content can be covered.

Embodiment 1, as shown in FIG. 1 to FIG. 6 , this embodiment provides a plasma processing apparatus, including: a vacuum reaction chamber, and a base 100 for carrying a substrate 300 is arranged in the vacuum reaction chamber. A gas injection device is used for delivering reaction gas into the vacuum reaction chamber. The plasma confinement ring 800 is arranged around the periphery of the susceptor 100. The plasma confinement ring 800 is provided with an exhaust channel, including an inner ring exhaust area close to the susceptor 100 and an exhaust area close to the side wall of the vacuum reaction chamber. The outer ring exhaust area is used for exhausting the reaction gas in the vacuum reaction chamber. The gas shielding ring 701 is located above the exhaust area of the inner circle of the plasma confinement ring 800 , and is used for guiding the flow of the reaction gas to the exhaust area of the outer circle of the plasma confinement ring 800 .

In order to facilitate understanding, the structure of the above-mentioned vacuum reaction chamber and the specific structure of the gas injection device are briefly described by taking the capacitively coupled plasma processing device as an example:

Please continue to refer to FIG. 1 and FIG. 2 , the above-mentioned vacuum reaction chamber is enclosed by a plurality of walls (eg, side walls 110 , top wall 111 and bottom wall); the vacuum reaction chamber is provided with a space inside. The vacuum reaction chamber can be evacuated. Except for the air inlet, the air outlet, and the passages for entering and leaving the substrate 300, other parts of the reaction chamber are kept sealed and isolated from the outside world during the processing. The gas inlet is connected to an external gas source for continuously supplying the reaction gas to the vacuum reaction chamber during the process. The gas injection device is arranged on the top wall 111. Specifically, the gas injection device includes: a mounting substrate 112, which is arranged on the inner surface of the top wall 111; a gas shower head 101, which is arranged on the inner surface of the top wall 111. on the mounting substrate 112 and communicated with the gas inlet for supplying reaction gas to the vacuum reaction chamber.

The exhaust port is connected with an external pump, used to discharge the exhaust gas generated in the processing process out of the vacuum reaction chamber, and also used to control the air pressure in the vacuum reaction chamber.

The vacuum reaction chamber is also provided with a base 100 opposite to the gas shower head 101 , an electrostatic chuck 200 (as shown in FIG. 2 ) arranged on the base 100 , and the gas shower head 101 As the upper electrode of the vacuum reaction chamber, the electrostatic chuck 200 also serves as the lower electrode of the vacuum reaction chamber, and a reaction area is formed between the upper electrode and the lower electrode. At least one radio frequency power supply is applied to one of the upper electrode or the lower electrode through a matching network, and a radio frequency electric field is generated between the upper electrode and the lower electrode, so as to dissociate the reaction gas into plasma, and the plasma contains A large number of active particles such as electrons, ions, excited atoms, molecules and free radicals, the above active particles can have various physical and chemical reactions with the surface of the substrate to be treated, so that the morphology of the substrate surface changes, that is, the etching is completed. process.

In this embodiment, an isolation ring 600 is disposed between the plasma confinement ring 800 and the base 100 , a cover ring 700 is disposed above the isolation ring 600 , the cover ring 700 and the gas shielding ring 701 connected. The gas shielding ring 701 is disposed on the periphery of the covering ring 700 .

Preferably, in this embodiment, the lower surface of the gas shielding ring 701 is not higher than the upper surface of the covering ring 700 . Specifically, according to different manufacturing processes, when the etching requirements for the substrate 300 are deep holes or deep grooves with an aspect ratio greater than 50%, the gas shielding ring 701 is flush with the cover ring 700 , that is, the top surface of the gas shielding ring 701 is flush with the top surface of the cover ring 700 (the gas shielding ring 701 is at a high position), so that the polymer (neutral radical) in the edge region is discharged and reacted through the plasma confinement ring 800 Before the cavity, it needs to pass through the gas shielding ring 701 and diffuse to the exhaust area of the outer ring of the plasma confinement ring 800 in the horizontal direction, thereby reducing the speed of the polymer (neutral radical) out of the reaction cavity and ensuring the participation of the edge area. The concentration of the substrate-treated polymer (neutral radical) improves the etching uniformity between the edge region of the substrate 300 and the central region of the substrate 300 .

When the etching requirement for the substrate 300 is that the etching aspect ratio is greater than 10% and less than 50% of deep holes or trenches, the concentration requirement of the polymer (neutral radical) in the etching process is smaller than that of the depth and width. At this time, the gas shielding ring 701 can be adjusted downward so that it is located in the middle of the side of the cover ring 700, that is, the top surface of the gas shielding ring 701 is located in the Covering the middle of the side wall of the ring 700 (the gas shielding ring is in the middle position), in this position, the shielding degree of the polymer (neutral radical) by the gas shielding ring is slightly lower than that when the gas shielding ring is in the high position, which can make The polymer exits the reaction chamber slightly faster, improving the etching uniformity between the edge region of the substrate 300 and the central region of the substrate 300 .

When the etching requirements for the substrate 300 are shallow grooves with an aspect ratio of less than 10%, the gas shielding ring 701 is located at the bottom of the sidewall of the cover ring 700, and the top surface of the gas shielding ring 701 It is flush with the bottom surface of the side wall of the cover ring 700 (the gas shielding ring is located at a low position). At this time, the amount of polymer required for the etching process is higher than that of the aspect ratio process, and the gas shielding ring 701 is at a low position. The shielding effect is improved, and the etching uniformity between the edge area of the substrate 300 and the central area of the substrate 300 is improved. As shown in FIG. 5 , the curve pointed by the arrow O represents the thickness distribution of the polymer at the center of the substrate 300 and the edge of the substrate 300 inside the plasma processing apparatus when the gas shielding ring 701 is not added; the curve pointed by the arrow W The curve represents the polymer thickness distribution at the center of the substrate 300 and the distance from the substrate 300 of the plasma processing apparatus when the gas shield ring 701 is included; it can be seen that the plasma treatment using the gas shield ring 701 When the device processes the substrate 300, the polymer concentration at the edge of the substrate 300 increases, and the overall polymer concentration in the reaction chamber increases, so that the edge of the substrate 300 can be improved. The etching rate can reduce the absolute diameter difference between the center of the substrate 300 and the edge of the substrate 300, and at the same time, the etching rate of the substrate can be improved as a whole. Structural or topographic differences caused by etching in the center of the substrate 300 and the edges of the substrate 300 are optimized.

In some embodiments, the gas shielding ring 701 and the cover ring 700 are made in one piece, thereby facilitating replacement and installation. In the case where the gas shielding ring 701 is provided, the plasma and the polymer are more widely distributed, so that the heat transfer is easier. Therefore, the addition of the gas shielding ring 701 makes the temperature in the vacuum reaction chamber lower reduced.

The distance between the gas shielding ring 701 and the exhaust area of the inner circle of the plasma confinement ring 800 is adjustable.

The radial width of the gas shielding ring 701 is greater than 0 and smaller than the radial width of the plasma confinement ring 800 .

The radial width of the gas shielding ring 701 is greater than 0 and less than or equal to two-thirds of the radial width of the plasma confinement ring 800 .

When the top surface of the gas shielding ring 701 and the cover ring 700 are at the same height, the distribution of reaction gas and plasma in the vacuum reaction chamber can be adjusted by increasing or decreasing the radial width of the gas shielding ring 701 , making the distribution of the polymer or plasma more uniform.

Preferably, the material of the gas shielding ring 701 is ceramic or quartz. The material of the gas shielding ring 701 can resist corrosion and improve its service life.

With reference to FIGS. 1 to 2 , the plasma processing apparatus provided in this embodiment further includes: a focus ring 500 and an edge ring 400 are arranged around the base 100 , and the focus ring 500 and the edge ring 400 are used to adjust the substrate The electric field or temperature distribution around 300 improves the uniformity of substrate 300 processing. The spacer ring 600 is located on the edge ring 400 and surrounds the focus ring 500 . The plasma confinement ring 800 surrounds the edge ring 400 and a bottom ground ring 900 is disposed around the plasma confinement ring 800 .

It can be understood that the gas shielding ring provided in this embodiment is suitable for various types of plasma processing apparatuses, such as capacitively coupled plasma processing apparatus (CCP) and inductively coupled plasma processing apparatus (ICP), and the present invention does not use this limited.

Embodiment 2, with reference to FIGS. 7 to 11 , this embodiment provides a plasma processing apparatus, including all the structures described in Embodiment 1, and the differences from Embodiment 1 are as follows:

The position of the gas shielding ring 701 can be adjusted online through the lifter 702 , so that the height of the gas shielding ring 701 can be adjusted according to the requirements of the process without opening the reaction chamber. The time wasted in opening and closing the reaction chamber can be saved, and the throughput of substrate processing can be improved.

In order to adjust the substrate processing rate at different phase angles, in this embodiment, the gas shielding ring 701 can also be configured to include a plurality of arc-shaped portions 7010, and the plurality of arc-shaped portions 7010 constitute the gas shielding ring 701, that is, the The plurality of arc-shaped portions 7010 are connected end to end to form the gas shielding ring 701 .

The plurality of arc-shaped portions 7010 are correspondingly supported by a plurality of lifters 702; one end of each of the lifters 702 is correspondingly connected to a mounting portion 7011 of one of the arc-shaped portions 7010, and the other end thereof is mounted to the vacuum On the bottom wall of the reaction chamber; each of the lifters 702 is used to control the arc portion 7010 to move in the vertical direction according to preset lifting requirements. The lifter 702 is electrically controlled or pneumatically controlled. In this embodiment, the heights of different arc-shaped portions can be independently adjusted to meet the adjustment of the etching rate of the substrate in different phase angle regions.

When the etching requirements for the substrate 300 are deep holes or deep grooves with an etching aspect ratio greater than 50%, the position of the gas shielding ring 701 is adjusted, and the top surface of the gas shielding ring 701 and the top surface of the cover ring 700 are adjusted. The surfaces are flush, so that the polymer is evenly distributed at the edge of the substrate 300 and the center of the substrate 300 .

When the etching requirements for the substrate 300 are deep holes or trenches with an etching aspect ratio greater than 10% and less than 50%, the position of the gas shielding ring 701 is adjusted. The top surface is located in the middle of the side wall of the cover ring 700 , so that the polymer is evenly distributed at the edge of the substrate 300 and the center of the substrate 300 .

When the etching requirement for the substrate 300 is a shallow groove with an etching aspect ratio of less than 10%, adjust the position of the gas shielding ring 701, the top surface of the gas shielding ring 701 and the sidewall of the cover ring 700 The bottom surface is flush, so that the polymer is evenly distributed at the edge of the substrate 300 and the center of the substrate 300 .

It can be understood that, according to the etching requirements of different parts of the substrate 300 , the height of the arc-shaped portion 7010 can be dynamically adjusted, and the plasma at the edge of the substrate 300 corresponding to the arc-shaped portion 7010 can be adjusted. concentration. In this way, the height of the gas shielding ring 701 can be adjusted more conveniently so as to observe its influence on the distribution of reaction gas or plasma inside the vacuum reaction chamber. Thereby, the etching rate at the edge of the substrate 300 can be increased, and the difference in absolute diameter or critical dimension (CD) between the center of the substrate 300 and the edge of the substrate 300 can be reduced. Structural or topographic differences caused by etching in the center of the substrate 300 and the edges of the substrate 300 are optimized.

As shown in FIG. 11 , when there is no gas shielding ring 701, the absolute diameter of the edge of the substrate and the center of the substrate (the difference is the largest, the sidewall polymer of the edge of the substrate has a poor protection ability; the edge of the substrate It is basically the same as the etching rate (ER) at the center of the substrate.

As the position of the gas shielding ring 701 changes, the difference in CD gradually decreases. When the top surface of the gas shielding ring 701 is at the same height as the top surface of the cover ring 700 (the gas shielding ring 701 is at a high position), the center of the substrate and the The CD difference at the edge basically disappears, indicating that the gas shielding ring 701 has the advantages of controlling the distribution of the polymer in the vacuum reaction chamber, protecting the morphology of the edge structure of the substrate, and at the same time, the etching rate does not change significantly.

At the same time, for the gas shielding ring 701 at different positions (for example, the gas shielding ring 701 is located in the middle position, and the low position), the distribution of the polymer can be controlled to different degrees, which can be used for different processes.

It can be seen that, without affecting the etching rate of the center of the substrate and the edge of the substrate, the difference in polymer distribution between the center of the substrate and the edge of the substrate can be eliminated by changing the position of the gas shielding ring control ring. The resulting CD difference.

On the other hand, based on the same inventive concept, the present invention also provides a gas shielding ring for a plasma processing device, comprising: an inner ring and an outer ring; the outer ring is fixed on the outer side of the inner ring, and is connected to the outer surface of the inner ring. The inner ring is made in one piece. The inner ring may be the cover ring 700 mentioned in the first embodiment above.

In other aspects, based on the same inventive concept, the present invention also provides a method for regulating and controlling polymer distribution, comprising: when the etching requirement for the substrate is a deep hole or a deep groove with an etching aspect ratio greater than 50%, adjusting as above The position of the gas shield ring of the plasma processing apparatus described herein, the top surface of the gas shield ring is flush with the top surface of the cover ring, so that the polymer is evenly distributed at the edge of the substrate and the center of the substrate .

When the etching requirements for the substrate are deep holes or trenches with an etching aspect ratio greater than 10% and less than 50%, adjust the position of the gas shielding ring, and the top surface of the gas shielding ring is located at The middle part of the side wall of the cover ring makes the polymer evenly distributed at the edge of the substrate and the center of the substrate.

When the etching requirement for the substrate is a shallow groove with an etching aspect ratio of less than 10%, the position of the gas shielding ring is adjusted, and the top surface of the gas shielding ring is flush with the bottom surface of the side wall of the cover ring, The polymer is uniformly distributed at the edge of the substrate and the center of the substrate.

To sum up, a plasma processing apparatus provided by the present invention includes: a vacuum reaction chamber, and a base for carrying a substrate is arranged in the vacuum reaction chamber. A gas injection device is used for delivering reaction gas into the vacuum reaction chamber. The plasma confinement ring is arranged around the periphery of the base, and the plasma confinement ring is provided with an exhaust channel, including an inner circle exhaust area close to the base and an outer circle exhaust close to the side wall of the vacuum reaction chamber The region is used to discharge the reaction gas in the vacuum reaction chamber. The gas shielding ring is located above the exhaust area of the inner circle of the plasma confinement ring, and is used for guiding the reaction gas to flow to the exhaust area of the outer circle of the plasma confinement ring. The addition of the gas barrier ring can be used to balance the difference in polymer produced at the center and edge of the cavity. The existence of the gas shield ring makes the gas path (polymer path) extend farther out, so that the edge of the wafer (substrate) is still in the area of homogenization of plasma and polymer, which reacts in the vacuum The polymer generated in the cavity can remain on the sidewall of the trench or deep hole, which is beneficial to reduce the overall morphology and absolute diameter of the etched sample. Therefore, during the plasma reaction, the protection of the polymer is very important.

It should be noted that, herein, the terms "comprising", "comprising" or any other variation thereof are intended to encompass non-exclusive inclusion, such that a process, method, article or device comprising a series of elements includes not only those elements, It also includes other elements not expressly listed or inherent to such a process, method, article or apparatus. Without further limitation, an element qualified by the phrase "comprising a..." does not preclude the presence of additional identical elements in a process, method, article or apparatus that includes the element.

In the description of the present invention, it should be understood that the terms "center", "height", "thickness", "upper", "lower", "vertical", "horizontal", "top", "bottom", " The orientation or positional relationship indicated by "inner", "outer", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description , rather than indicating or implying that the indicated device or element must have a particular orientation, be constructed and operate in a particular orientation, and therefore should not be construed as limiting the invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

In the description of the present invention, unless otherwise expressly specified and limited, the terms "installed", "connected", "connected" and "fixed" should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection , or integrated; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of the two elements or the interaction relationship between the two elements. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood in specific situations.

In the present invention, unless otherwise expressly specified and limited, a first feature "on" or "under" a second feature may include the first and second features in direct contact, or may include the first and second features Not directly but through additional features between them. Also, the first feature being "above", "over" and "above" the second feature includes the first feature being directly above and obliquely above the second feature, or simply denoting that the first feature is level above the second feature. The first feature is "below", "below" and "below" the second feature includes the first feature being directly below and diagonally below the second feature, or simply means that the first feature has a lower level than the second feature.

While the content of the present invention has been described in detail by way of the above preferred embodiments, it should be appreciated that the above description should not be construed as limiting the present invention. Various modifications and substitutions to the present invention will be apparent to those of ordinary skill in the art upon reading the foregoing disclosure. Therefore, the protection scope of the present invention should be defined by the appended claims.

100: Pedestal 101: Gas sprinkler head 110: Sidewall 111: Top Wall 112: Mounting the substrate 200: electrostatic chuck 300: Substrate 400: Edge Ring 500: Focus Ring 600: Isolation Ring 700: Cover Ring 701: Gas shield ring 7010: Arc 702: Lifter 800: Plasma Confinement Ring 900: Bottom Ground Ring O, W: Arrow

1 is a schematic structural diagram of a vacuum reaction chamber of a plasma processing apparatus according to an embodiment of the present invention; 2 is a schematic diagram of the main structure of the plasma processing apparatus provided by an embodiment of the present invention when the control ring is located at a low bit position; 3 is a schematic diagram of the main structure of the plasma processing apparatus provided by an embodiment of the present invention when the control ring is located in the middle position; 4 is a schematic diagram of the main structure of the plasma processing apparatus provided by an embodiment of the present invention when the control ring is located at a high position; 5 is a schematic diagram of the distribution of gas paths when the control ring of the plasma processing apparatus is located at a high position according to an embodiment of the present invention; FIG. 6 shows the polymerization on the wafer surface after the wafer is processed by the plasma processing apparatus provided by an embodiment of the present invention and after the wafer is processed by the plasma processing apparatus without the control ring in the prior art. Schematic diagram of the contrast effect of sediment deposition; 7 is a schematic diagram of the main structure of the plasma processing apparatus provided by another embodiment of the present invention when the control ring is located at a low bit position; 8 is a schematic diagram of the main structure of the plasma processing apparatus provided by another embodiment of the present invention when the control ring is located in the middle position; 9 is a schematic diagram of the main structure of the plasma processing apparatus provided by another embodiment of the present invention when the control ring is located at a high position; 10 is a schematic diagram of the main structure of a control ring of a plasma processing apparatus according to another embodiment of the present invention; and FIG. 11 is a graph showing the variation effect of the critical dimension (CD) and the etching rate (ER) when the control ring of the plasma processing apparatus is located at different positions according to another embodiment of the present invention.

100: Pedestal

101: Gas sprinkler head

200: electrostatic chuck

300: Substrate

400: Edge Ring

500: Focus Ring

600: Isolation Ring

700: Cover Ring

701: Gas shield ring

800: Plasma Confinement Ring

900: Bottom Ground Ring

Claims (14)

A plasma processing device, comprising: a vacuum reaction chamber, a base for carrying the substrate is arranged in the vacuum reaction chamber; a gas injection device for delivering a reaction gas into the vacuum reaction chamber; A plasma confinement ring is arranged around the periphery of the susceptor, and an exhaust channel is provided on the plasma confinement ring, including an inner ring exhaust area near the susceptor and an outer ring near the side wall of the vacuum reaction chamber an exhaust area for exhausting the reaction gas in the vacuum reaction chamber; and A gas shielding ring is located above the inner exhaust area of the plasma confinement ring, and is used for guiding the reaction gas to flow toward the outer exhaust area of the plasma confinement ring. The plasma processing apparatus of claim 1, wherein the distance between the gas shielding ring and the inner ring exhaust area of the plasma confinement ring is adjustable. The plasma processing apparatus of claim 1, wherein the radial width of the gas shielding ring is greater than 0 and less than the radial width of the plasma confinement ring. The plasma processing apparatus of claim 1, wherein the radial width of the gas shielding ring is greater than 0 and less than or equal to two-thirds of the radial width of the plasma confinement ring. The plasma processing apparatus of claim 1, wherein the gas shielding ring includes a plurality of arc-shaped portions, and the plurality of arc-shaped portions constitute the gas shielding ring. The plasma processing apparatus according to claim 1, wherein the material of the gas shielding ring is ceramic or quartz. The plasma processing device according to claim 5, wherein the plurality of arc-shaped portions are supported by a plurality of lifters correspondingly; one end of each of the lifters is correspondingly connected to one of the arc-shaped portions, and the other end thereof is mounted to the on the bottom wall of the vacuum reaction chamber; Each of the lifters is used to control the arc-shaped portion to move in a vertical direction according to a preset lift requirement. The plasma processing apparatus according to claim 7, wherein the lifter is electrically controlled or pneumatically controlled. The plasma processing apparatus of claim 1, wherein an isolation ring is arranged between the plasma confinement ring and the base, a cover ring is arranged above the isolation ring, and the cover ring is connected to the gas shielding ring. The plasma processing apparatus of claim 9, wherein the lower surface of the gas shielding ring is not higher than the upper surface of the covering ring. The plasma processing apparatus of claim 9, wherein the gas shielding ring is fixed on the periphery of the covering ring. The plasma processing apparatus of claim 9, wherein the gas shielding ring and the covering ring are integrally formed. A gas shielding ring is used for a plasma processing device, the plasma processing device comprises a base and a focusing ring arranged around the base, a plasma confinement ring is arranged around the base, and the plasma treatment device includes: an inner ring and an outer ring; the outer ring is fixed on the outer side of the inner ring and is made in one piece with the inner ring, the inner ring is arranged around the focusing ring, and the outer ring is located above the plasma confinement ring, At least partially covering the exhaust region of the plasma confinement ring. A method for regulating and controlling polymer distribution, comprising the steps of: When the etching requirements for a substrate are deep holes or deep grooves with an etching aspect ratio greater than 50%, adjust the position of a gas shielding ring of the plasma processing apparatus according to any one of claims 1 to 12 , the top surface of the gas shielding ring is flush with the top surface of a covering ring; When the etching requirements of the substrate are deep holes or trenches with an etching aspect ratio greater than 10% and less than 50%, adjust the position of the gas shielding ring, and the top surface of the gas shielding ring is located on the cover ring the middle of the side wall; When the etching requirement of the substrate is a shallow groove with an etched aspect ratio of less than 10%, the position of the gas shielding ring is adjusted, and the top surface of the gas shielding ring is flush with the bottom surface of the sidewall of the cover ring.

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