CN114300336B - Plasma reactor - Google Patents
Plasma reactor Download PDFInfo
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- CN114300336B CN114300336B CN202111632371.8A CN202111632371A CN114300336B CN 114300336 B CN114300336 B CN 114300336B CN 202111632371 A CN202111632371 A CN 202111632371A CN 114300336 B CN114300336 B CN 114300336B
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- pumping ring
- ring
- plasma
- gas
- reactor
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- 238000005086 pumping Methods 0.000 claims abstract description 136
- 239000007921 spray Substances 0.000 claims abstract description 8
- 238000005507 spraying Methods 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 62
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 14
- 238000000605 extraction Methods 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 230000009286 beneficial effect Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Abstract
The invention provides a plasma reactor, which comprises a reactor chamber, wherein the reactor chamber is provided with a first gas pumping ring, a second gas pumping ring, a spray head panel and a heater; the showerhead faceplate is for spraying plasma to the reactor chamber; the first air pumping ring and the second air pumping ring are mutually matched; the second air pumping ring is matched with the heater; the second air extraction ring is provided with a plurality of through holes, and the through holes penetrate through the second air extraction ring; the heater is used to provide temperature conditions for the plasma reaction. The plasma reactor is used for simplifying the processing process, eliminating the processing dead angle, saving the processing cost, being convenient for replacing the working condition of the process and improving the utilization rate of the air extraction structure.
Description
Technical Field
The invention relates to the field of semiconductor processing, in particular to a plasma reactor.
Background
The schematic structure of the plasma reactor in the prior art is shown in fig. 1, and after the processing gas is input into the inner cavity, the processing gas is discharged from the exhaust hole of the air suction ring; the schematic structural diagram of the pumping ring in the prior art is shown in fig. 2, and is an integral structure, however, along with the change of the process working condition, the pumping ring structure becomes more complex and has more processing dead angles, so that the problems of high processing cost and long processing period exist. Therefore, there is a need for a plasma reactor and a pumping structure thereof to improve the above problems.
Disclosure of Invention
The invention aims to provide a plasma reactor which is used for simplifying the processing process of a gas pumping ring, eliminating processing dead angles, saving processing cost, facilitating the replacement of process working conditions and improving the utilization rate of the gas pumping ring.
The invention provides a plasma reactor, which comprises a reactor chamber, wherein the reactor chamber is provided with a first gas pumping ring, a second gas pumping ring and a spray head panel; the showerhead faceplate is for spraying plasma to the reactor chamber; the first air pumping ring is matched with the second air pumping ring.
The plasma reactor has the beneficial effects that the first air pumping ring and the second air pumping ring are mutually matched, so that the processing dead angle is eliminated, the processing cost is saved, when the process working condition is changed, the plasma reactor only needs to take down the spray head panel to separate the first air pumping ring from the second air pumping ring, different process production can be met only by changing the first air pumping ring, the utilization rate of the air pumping ring is improved, and the operation is convenient.
Optionally, the second air extraction ring is provided with a plurality of through holes, and the through holes penetrate through the second air extraction ring.
Optionally, at least one side of the through hole is provided with a chamfer. The chamfering machine has the beneficial effects that the chamfering machine is convenient to process by arranging the chamfer, and the influence of burrs on the air suction effect of the air suction ring is reduced.
Optionally, the chamfer is less than 25 degrees. The plasma guide device has the beneficial effects that smooth flow guide of plasma is realized by adjusting the chamfer, and the air suction speed is improved.
Optionally, the diameter of the through hole is smaller than 20mm. The through hole air suction device has the beneficial effects that through hole air suction is more uniform by adjusting the diameter of the through hole.
Optionally, the through holes are arranged in a circular shape, an elliptic shape or a rounded polygonal shape. The plasma through hole has the beneficial effects that the inner surface of the through hole is smooth, sharp corners are not present, plasma air flow is convenient to pass smoothly, and deposition of ions in the through hole is reduced.
Optionally, one side of the first air pumping ring is arranged in a slope shape or a curved surface shape. The plasma deposition film forming device has the beneficial effects that the plasma deposition film forming device can reduce the deposition film forming of the plasma on the first gas pumping ring by enabling one side of the first gas pumping ring to be in a slope shape or a curved surface shape, and is convenient to clean and maintain.
Optionally, a gap is formed between the nozzle panel and the first pumping ring, and the size of the gap is [0.3,5] mm. The beneficial effects of the method are that the deposited film on the surface of the spray head panel is reduced, and the cleaning of the reactor chamber is facilitated.
Optionally, the first air pumping ring and the second air pumping ring are matched with each other through a concave part and a convex part. The plasma leakage reduction device has the beneficial effects that the first air extraction ring and the second air extraction ring are matched more tightly by arranging the concave part and the convex part, so that plasma leakage reduction is facilitated.
Optionally, the first pumping ring and the second pumping ring are both made of ceramic materials. The air pump has the beneficial effects that the arrangement is beneficial to prolonging the service lives of the first air pumping ring and the second air pumping ring, and can adapt to long-term production.
Optionally, the reactor chamber is provided with a heater for providing temperature conditions for the plasma reaction; the second pumping ring is matched with the heater.
Optionally, the second pumping ring is matched with the heater.
Optionally, the reactor chamber is provided with a gas outlet; a gas passage is arranged on one side of the heater; the gases in the first gas pumping ring and the second gas pumping ring are exhausted from the reactor chamber through the gas outlet and/or the gas passage. This arrangement facilitates smooth evacuation of the gas in the second pumping ring.
Drawings
FIG. 1 is a schematic diagram of a prior art plasma reactor;
FIG. 2 is a schematic diagram of a prior art pumping ring;
FIG. 3 is a cross-sectional view of a plasma reactor according to the present invention;
FIG. 4 is an enlarged view of the structure of FIG. 3A in accordance with the present invention;
FIG. 5 (a) is a schematic view of a first pumping ring according to an embodiment of the present invention;
fig. 5 (b) is a schematic structural diagram of a first pumping ring according to another embodiment of the present invention;
FIG. 6 (a) is a schematic diagram showing a separation structure of an pumping ring according to the present invention;
FIG. 6 (b) is a schematic diagram illustrating a locking structure of an pumping ring according to the present invention;
FIG. 7 (a) is a schematic diagram showing the separation structure of another pumping ring according to the present invention;
FIG. 7 (b) is a schematic diagram illustrating an alternative embodiment of the pumping ring according to the present invention;
fig. 8 (a) - (f) are cross-sectional views of a second pumping ring according to various embodiments of the present invention.
Reference numerals in the drawings:
100. a first pumping ring;
101. a first ring;
102. a first protrusion;
103. a ramp ring;
200. a second pumping ring;
201. a second ring;
202. a second protrusion;
203. an edge ring;
300. a reactor chamber;
400. a shower nozzle panel;
500. a heater;
601. a through hole;
602. a first recess;
603. a gas outlet;
604. a gas inlet.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.
In view of the problems existing in the prior art, an embodiment of the present invention provides a plasma reactor for introducing plasma and performing deposition treatment on a substrate surface therein, as shown in fig. 3, which is a cross-sectional view of the plasma reactor, and includes a reactor chamber 300, wherein a first gas pumping ring 100 and a second gas pumping ring 200 are disposed inside the reactor chamber 300, and a shower nozzle panel 400 is detachably connected to a top side of the reactor chamber 300; in this embodiment, a Plasma enhanced chemical vapor deposition (Plasma-Enhanced Chemical Vapor Deposition, PECVD) is used as an application scenario of the Plasma reactor, and it should be noted that the Plasma reactor can also be used for etching a substrate surface through adaptive adjustment.
The internal structure of the plasma reactor is described in detail as follows: as shown in fig. 3 and 4, fig. 3 is a cross-sectional view of a plasma reactor, and fig. 4 is an enlarged schematic view of a structure at a in fig. 3.
The invention provides a plasma reactor, which comprises a reactor chamber 300, wherein the reactor chamber 300 is provided with a first gas pumping ring 100, a second gas pumping ring 200 and a spray head panel 400; the showerhead faceplate 400 is used to spray plasma to the reactor chamber 300; the first pumping ring 100 is matched with the second pumping ring 200.
In some embodiments, the second pumping ring 200 is interfitted with the heater 500; the heater 500 is used to provide temperature conditions for the plasma reaction.
In some specific embodiments, the inner side of the showerhead faceplate 400 is provided with a gas inlet 604, the inner side of the reactor chamber 300 is provided with a gas outlet 603, and the plasma enters the inner sides of the first pumping ring 100 and the second pumping ring 200 through the gas inlet 604, the second pumping ring 200 is provided with a substrate, and the plasma is deposited on the substrate. A gas passage is provided at one side of the heater 500; after the deposition is completed, the residual gases in the first pumping ring 100 and the second pumping ring 200 are exhausted from the reactor chamber 300 through the gas passages.
In other embodiments, the second gas pumping ring 200 is provided with a plurality of through holes 601, and the through holes 601 penetrate through the second gas pumping ring 200.
In one embodiment, after the deposition is completed, the residual gases of the first gas pumping ring 100 and the second gas pumping ring 200 are sequentially exhausted from the reactor chamber 300 through the through holes 601 and the gas outlets 603 in the second gas pumping ring 200; smooth flow guiding of the plasma is realized, the diffusion speed of the plasma on the surface of the substrate is favorably and stably maintained, and the deposition effect of the plasma on the surface of the substrate is ensured.
It should be noted that the second gas pumping ring 200 may be optionally provided with or without a through hole 601; this arrangement does not affect the effect of plasma deposition on the substrate surface.
In still other embodiments, the gas inlet 604 may be provided in the reactor chamber 300 to provide an etching effect on the substrate surface by changing the source material of the plasma.
In other embodiments, the through hole 601 may be in communication with other cavities disposed in the reactor chamber 300 to enable evacuation of the plasma.
It should be noted that in some embodiments, a gap exists between the showerhead faceplate 400 and the first pumping ring 100. Illustratively, the gap has a size of [0.3,5] mm.
In some embodiments, the first pumping ring 100 and the second pumping ring 200 are each made of a ceramic material. This arrangement is advantageous in that it can extend the service life of the first pumping ring 100 and the second pumping ring 200, and can be adapted to long-term production.
In a specific embodiment, the first pumping ring 100 and the second pumping ring 200 are made of silicon nitride ceramic material. In other embodiments, the first pumping ring 100 and the second pumping ring 200 may be made of other ceramic materials.
In some embodiments, the first pumping ring 100 and the second pumping ring 200 are matched with each other through concave and convex.
In some embodiments, a first protrusion 102 and a first recess 602 are disposed between the first pumping ring 100 and the second pumping ring 200. The first pumping ring 100 comprises a first ring 101; the second pumping ring 200 includes a second ring 201.
In some embodiments, the top side of the heater 500 is provided with a second gas pumping ring 200, and the top side of the second gas pumping ring 200 is provided with a first gas pumping ring 100; a second protrusion 202 and a second recess are disposed between the second ring 201 and the heater 500, and when the second protrusion 202 is engaged with the second recess, the second ring 201 is attached to the heater 500. The top end of the heater 500 is detachably connected with the bottom end of the second air pumping ring 200, and meanwhile, the top end of the second air pumping ring 200 is detachably connected with the bottom end of the first air pumping ring 100, so that the first air pumping ring 100 and the second air pumping ring 200 can be conveniently replaced, and the time required for replacing the process working condition can be saved.
When the process conditions are changed, the shower nozzle panel 400 is first disassembled, the first gas pumping ring 100 at the inner side of the reactor chamber 300 is taken out, the other first gas pumping ring 100 is placed in the reactor chamber 3, when the first protrusion 102 is clamped with one end of the second ring 201 through the first recess 602, the first ring 101 is attached to the second ring 201, and the first gas pumping ring 100 is attached to the second gas pumping ring 200. Plasma leakage between the first pumping ring 100 and the second pumping ring 200 can be avoided. The first air pumping ring and the second air pumping ring form the split air pumping ring, so that processing dead angles are eliminated, processing cost is saved, when the plasma reactor is used for replacing process working conditions, only the spray head panel is required to be taken down, the first air pumping ring is separated from the second air pumping ring, different process production can be met only by replacing the first air pumping ring, the utilization rate of the air pumping ring is improved, and the operation is convenient.
In some embodiments, one side of the first pumping ring 100 is disposed in a slope shape or a curved shape.
In some embodiments, the first pumping ring 100 includes a first ring 101 and a ramped ring 103.
In one embodiment, as shown in fig. 5 (a), a schematic structure of the first pumping ring is shown, and the inner side of the first ring 101 has no slope ring 103, which is convenient for manufacturing and has long service life.
In another embodiment, as shown in fig. 5 (b), a schematic structural diagram of another first pumping ring is shown, a slope ring 103 is disposed on the inner side of the first ring 101, the inner wall of the slope ring 103 is in a conical surface shape, the outer side of the bottom end of the showerhead faceplate 400 is located on the inner side of the slope ring 103, and a gap exists between the showerhead faceplate 400 and the slope ring 103, which can reduce the deposition of a film formed by plasma on the inner side of the slope ring 103, meanwhile, due to the narrow gap space between the showerhead faceplate 400 and the slope ring 103, the plasma has low mobility in the gap and does not deposit a large amount of film formed by deposition, and meanwhile, the gap can avoid the pressure breakage of the slope ring 103.
As shown in fig. 6 (a), a schematic diagram of a separation structure of a first air pumping ring and a second air pumping ring is shown, wherein through holes 601 are formed in the inner side of the second ring 201, the number of the through holes 601 is a plurality, and the through holes 601 are distributed in the inner side of the second ring 201.
When the plasma reactor is in operation, the first gas pumping ring 100 and the second gas pumping ring 200 are in a clamped state, as shown in fig. 6 (b), wherein the bottom end surface of the first ring 101 is attached to the top end surface of the second ring 201, the first protrusion 102 is clamped with the first recess 602, and the first gas pumping ring 100 is attached to the second gas pumping ring 200.
In another embodiment, as shown in fig. 7 (a), which is a schematic diagram illustrating a separation structure of another pumping ring in the present invention, the first protrusion 102 may be disposed in a ring shape, the first protrusion 102 is fixedly connected to the top end of the second ring 201, and the first protrusion 102 and the second ring 201 together form a ring-shaped step shape; correspondingly, an annular groove is formed at the outer edge of the bottom end of the first ring 101, so that the bottom end of the first ring 101 is in an annular step shape. As shown in fig. 7 (b), which is a schematic diagram of a separation structure of another pumping ring according to the present invention, the first protrusion 102 can engage with the annular groove, and when the first protrusion 102 engages with the bottom end of the first ring 101 through the annular groove, the bottom end surface of the first ring 101 engages with the top end surface of the second ring 201, so that a seal is maintained between the first ring 101 and the second ring 201.
In still other embodiments, the first pumping ring 100 and the second pumping ring 200 may be further connected by a threaded connection or other removable connection.
As shown in fig. 8, which is a cross-sectional view of the second pumping ring according to the present invention in various embodiments, in one embodiment, as shown in fig. 8 (a), the through holes 601 are annularly arranged inside the second ring 201 in a single layer, and in another embodiment, as shown in fig. 8 (b), the through holes 601 are annularly arranged inside the second ring 201 in multiple layers, which is advantageous for uniformly diffusing the plasma in the second pumping ring 200 on the substrate surface and ensuring uniformity of the deposited semiconductor layer.
In some embodiments, the chamfer is less than 25 degrees. Smooth flow guiding of the plasma is realized by adjusting the chamfer angle, and the air suction speed is improved.
In some embodiments, the diameter of the through hole 601 is, illustratively, less than 20mm. The diameter of the through hole 601 is adjusted to enable the through hole 601 to be pumped more uniformly.
In some embodiments, at least one side of the through hole 601 is provided with a chamfer. The chamfering is convenient to process, and the influence of burrs on the air suction effect of the air suction ring is reduced.
In a specific embodiment, as shown in (c) of fig. 8, the outside of the through hole 601 is provided with a chamfer.
In another embodiment, as shown in (d) of fig. 8, the inner side of the through hole 601 is provided with a chamfer.
In yet another embodiment, as shown in fig. 8 (e), both the inner and outer sides of the through hole 601 are provided with chamfers.
It should be noted that, in one embodiment, the number of the inner through holes 601 of the second ring 201 may be increased or decreased to control the overall outflow speed of the plasma to adapt to different process conditions.
Illustratively, the chamfer angle is less than 25 degrees, which is advantageous for increasing pumping speed while maintaining uniform distribution of the plasma in the second pumping ring 200 on the substrate surface during pumping.
In some embodiments, the through holes 601 are arranged in a circular, oval, or rounded polygonal shape.
In a specific embodiment, as shown in (a) of fig. 8, the shape of the through hole 601 is circular or elliptical, and the diameter of the through hole 601 is less than 20mm; this arrangement allows the inner surface of the through hole 601 to be rounded.
In another embodiment, as shown in (f) of fig. 8, the through hole 601 is arranged in a polygon, and the polygon is a rounded polygon, no sharp angle exists, so that the plasma air flow smoothly passes through the through hole 601, and meanwhile deposition of the plasma in the through hole 601 is reduced, and cleaning is facilitated.
While embodiments of the present invention have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
Claims (10)
1. A plasma reactor, comprising a reactor chamber (300), the reactor chamber (300) being provided with a first pumping ring (100), a second pumping ring (200) and a showerhead faceplate (400);
the showerhead faceplate (400) is for spraying plasma to the reactor chamber (300);
the reactor chamber (300) is provided with a heater (500), the heater (500) being for providing temperature conditions for a plasma reaction;
the second gas pumping ring (200) is arranged on the top side of the heater (500), and the second gas pumping ring (200) is matched with the heater (500);
the first air pumping ring (100) is arranged on the top side of the second air pumping ring (200), and the first air pumping ring (100) is matched with the second air pumping ring (200);
a gap is formed between the spray head panel (400) and the first air pumping ring (100), and the size of the gap is 0.3 and 5 mm.
2. The reactor according to claim 1, wherein the second gas pumping ring (200) is provided with a plurality of through holes (601), and the through holes (601) penetrate through the second gas pumping ring (200).
3. Reactor according to claim 2, characterized in that at least one side of the through hole (601) is provided with a chamfer.
4. A reactor according to claim 3, wherein the chamfer is less than 25 degrees.
5. Reactor according to claim 2, characterized in that the diameter of the through holes (601) is smaller than 20mm.
6. Reactor according to claim 2, wherein the through holes (601) are arranged in a circular, oval or rounded polygonal shape.
7. The reactor according to claim 1, characterized in that one side of the first gas pumping ring (100) is arranged in a slope or curved shape.
8. The reactor according to claim 1, characterized in that the first gas pumping ring (100) and the second gas pumping ring (200) are mutually matched by means of a recess and a protrusion.
9. A plasma reactor according to claim 1, characterized in that the first gas pumping ring (100) and the second gas pumping ring (200) are both made of ceramic material.
10. A plasma reactor according to claim 1, characterized in that the reactor chamber (300) is provided with a gas outlet (603); a gas passage is arranged on one side of the heater (500); the gases in the first pumping ring (100) and the second pumping ring (200) exit the reactor chamber (300) from the gas outlet (603) and/or the gas passage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111632371.8A CN114300336B (en) | 2021-12-28 | 2021-12-28 | Plasma reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111632371.8A CN114300336B (en) | 2021-12-28 | 2021-12-28 | Plasma reactor |
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| Publication Number | Publication Date |
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| CN114300336A CN114300336A (en) | 2022-04-08 |
| CN114300336B true CN114300336B (en) | 2024-02-23 |
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| CN202111632371.8A Active CN114300336B (en) | 2021-12-28 | 2021-12-28 | Plasma reactor |
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| US20020011216A1 (en) * | 1999-06-04 | 2002-01-31 | Tue Nguyen | Integral susceptor-wall reactor system and method |
| JP4602532B2 (en) * | 2000-11-10 | 2010-12-22 | 東京エレクトロン株式会社 | Plasma processing equipment |
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| US6106625A (en) * | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
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| CN114300336A (en) | 2022-04-08 |
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