CN113249707A - Thin film deposition device and thin film deposition method - Google Patents
Thin film deposition device and thin film deposition method Download PDFInfo
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- CN113249707A CN113249707A CN202110428360.1A CN202110428360A CN113249707A CN 113249707 A CN113249707 A CN 113249707A CN 202110428360 A CN202110428360 A CN 202110428360A CN 113249707 A CN113249707 A CN 113249707A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a thin film deposition device and a thin film deposition method, wherein the thin film deposition device comprises: the device comprises a reaction chamber and a bearing seat, wherein the bearing seat is arranged in the reaction chamber and is used for bearing a substrate; the upper part of the reaction chamber is provided with a first gas inlet, the lower part of the reaction chamber is provided with a second gas inlet and a pump gas inlet, two sides in the reaction chamber are provided with annular side walls, and a partition plate and a second gas outlet ring are also arranged in the reaction chamber; the film deposition device provided by the invention can be synchronously carried out with a film deposition process, the cleaning time is reduced, the productivity is improved, and the cavity and the film granularity are improved; according to the film deposition method provided by the invention, the gas ring is formed on the side wall of the cavity to reduce the temperature of the side wall of the cavity, and the reaction source concentration at the bottom of the cavity is diluted by inert gas, so that excessive film accumulation and incomplete removal of particles are prevented, and the granularity of the cavity and the film is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a thin film deposition device and a thin film deposition method.
Background
When the sub-atmospheric pressure chemical vapor deposition SACVD semiconductor equipment is used for carrying out deposition reaction, higher temperature and pressure are needed, especially in the STI process, a film is deposited on a silicon wafer and more films are deposited around a cavity, and when the film is accumulated to be thicker, a great amount of particles can be generated by falling off, so that the performance, especially the granularity, of the film on the silicon wafer is influenced. If a large amount of films are deposited at the bottom of the cavity, the pumping flow rate is also influenced, the process is further influenced, and meanwhile, the films at the bottom of the cavity are difficult to remove, so that particles are easily generated.
Disclosure of Invention
In view of the above, the present disclosure provides a thin film deposition apparatus and a thin film deposition method, which are used to reduce the deposition of a thin film on the sidewall and the bottom of a chamber, so as to prevent particles from accumulating on the sidewall and the bottom of the chamber and affecting the performance of the thin film.
In one aspect, the present invention provides a thin film deposition apparatus comprising: the device comprises a reaction chamber and a bearing seat, wherein the bearing seat is arranged in the reaction chamber and is used for bearing a substrate; the upper part of the reaction chamber is provided with a first gas inlet, the lower part of the reaction chamber is provided with a second gas inlet and a pump gas outlet, two sides in the reaction chamber are provided with annular side walls, a partition plate and a second gas outlet ring are also arranged in the reaction chamber, the second gas inlet and the pump gas outlet are distributed on two sides of the bearing seat, an annular pump gas outlet is formed between the partition plate and the second gas outlet ring, and the second gas inlet is communicated with the second gas outlet ring; an annular air pumping channel communicated with the pump air pumping port is arranged above the pump air pumping port, and the lower surface of the annular side wall is in contact connection with the upper surface of the second air outlet ring.
An angle is arranged at an annular pumping hole formed between the partition plate and the second gas outlet ring.
Furthermore, the separation plate is composed of a plurality of annular plates, and the size of the annular air extraction opening is adjusted according to the setting of the radius length of the annular plates.
Furthermore, the radius length of the annular plate close to the pumping port on the partition plate is greater than that of the annular plate at the other end of the partition plate.
Further, the annular side wall is embedded with a side wall annular gas cavity, the second gas inlet is communicated with the side wall annular gas cavity through a pipeline, and the side wall annular gas cavity is communicated with a second gas outlet ring.
Furthermore, a plurality of holes are distributed on the second gas outlet ring in an annular shape.
Further, the second gas outlet ring comprises an upper gas outlet ring part and a lower gas outlet ring part, and the upper gas outlet ring part and the lower gas outlet ring part are matched and fixed.
Furthermore, an annular cavity and a plurality of air outlet holes distributed in an annular shape are formed in the lower portion of the air outlet ring, the second air inlet is communicated with the annular cavity, and a cavity groove matched with the lower portion of the air outlet ring is formed in the upper portion of the air outlet ring.
On the other hand, the invention also provides a film deposition method, which is carried out by adopting any one of the film deposition devices, and specifically comprises the following steps:
1) the process gas is introduced into the cavity through the first gas inlet, and simultaneously the second gas enters the bottom of the cavity through the second gas inlet (2);
2) the process gas gradually forms a film on the surface of the substrate;
3) the second gas forms a gas ring through the annular side wall to reduce the temperature of the side wall of the cavity and dilute the concentration of a reaction source at the bottom of the cavity so as to improve the granularity of the cavity and the film;
4) the process gas and the second gas pass through the annular pumping channel and are exhausted from the pumping port.
Further, the second gas is inert gas N2Or one of Ar or He.
The film deposition device provided by the invention can be synchronously applied with a film deposition process, the cleaning time can be reduced, the productivity is improved, the cavity and the film granularity are improved, and annular members and the like involved in the device can be detached, so that the film deposition device is beneficial to installation and later maintenance;
according to the film deposition method provided by the invention, the gas ring is formed on the side wall of the cavity to reduce the temperature of the side wall of the cavity, and the reaction source concentration at the bottom of the cavity is diluted by inert gas, so that excessive film accumulation and incomplete removal of particles are prevented, and the granularity of the cavity and the film is improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present invention, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a schematic cross-sectional view of a thin film deposition apparatus according to an embodiment of the disclosure;
FIG. 2 is a schematic top and front view of a divider panel according to an embodiment of the present disclosure;
FIG. 3 is a three-dimensional schematic view of a second gas exit ring provided in accordance with a disclosed embodiment of the invention;
FIG. 4 is a schematic cross-sectional view of a thin film deposition apparatus according to another embodiment of the disclosure;
FIG. 5 is a three-dimensional schematic view of a second gas outlet ring according to another embodiment of the disclosure;
FIG. 6 is a partial three-dimensional schematic view of a second gas exit ring according to another embodiment of the disclosure;
FIG. 7 is a schematic structural diagram of a chemical vapor deposition apparatus according to comparative example 1 of the present disclosure.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of systems consistent with certain aspects of the invention, as detailed in the appended claims.
The device aims to solve the problems of the side wall and the bottom of a cavity of a thin film deposition device in the prior art. In the case where excessive film accumulation and incomplete removal occur during the process to generate particles that affect the properties of the film, particularly the particle size, the present embodiment provides a film deposition apparatus, as shown in fig. 1, comprising: the device comprises a reaction chamber and a bearing seat, wherein the bearing seat is arranged in the reaction chamber and is used for bearing a substrate; the upper part of the reaction chamber is provided with a first gas inlet 1, the lower part of the reaction chamber is provided with a second gas inlet 2 and a pump gas outlet 3, two sides in the reaction chamber are provided with annular side walls 4, the reaction chamber is also internally provided with a partition plate 5 and a second gas outlet ring 6, the second gas inlet 2 and the pump gas outlet 3 are distributed on two sides of the bearing seat, an annular gas outlet 7 is formed between the partition plate 5 and the second gas outlet ring 6, and the second gas inlet 2 is communicated with the second gas outlet ring 6; an annular pumping channel 8 communicated with the pumping port (3) is arranged above the pumping port, and the lower surface of the annular side wall 4 is in contact connection with the upper surface of the second gas outlet ring 6.
The annular side wall 4 is embedded with a side wall annular gas cavity 41, the second gas inlet 2 is communicated with the side wall annular gas cavity 41 through a pipeline, and the side wall annular gas cavity 41 is communicated with the second gas outlet ring 6.
When the film deposition device provided by the above embodiment is used, the second gas enters the side wall annular cavity 41 through the second gas inlet 2 and is exhausted through the second gas exhaust ring 6, the process gas is diluted in the process to prevent the film from being deposited on the bottom layer of the annular pumping channel 8, and the second gas cools the side wall of the cavity through the side wall annular cavity 41 to reduce the film deposition on the side wall of the cavity;
in order to mix the process gas and the second gas far from the annular pumping hole 7 to achieve a better effect of diluting the concentration of the process gas, the annular pumping hole formed by combining the partition plate 5 and the second gas outlet ring 6 is preferably provided with a certain angle;
in order to realize the installation and maintenance of the later-period film deposition device, the side wall annular cavity 41 and the second gas outlet ring 6 are combined and can be detached.
As shown in fig. 2 and 3, in order to facilitate adjustment of the size of the annular pumping port, the partition plate 5 of the present embodiment is formed by a plurality of annular plates, and the size of the annular pumping port is adjusted by the radius length of the annular plates, and the radius of the annular plate near the pumping port is larger than the radius length of the annular plate far from the pumping port, that is, the annular pumping port near the pumping port is smaller than the annular pumping port 7 far from the pumping port;
preferably, the second gas outlet ring is provided with a plurality of small holes 61 which are distributed annularly;
as shown in fig. 4, in another preferred structure provided in this embodiment, the second gas outlet ring 6 includes an upper gas outlet ring part 62 and a lower gas outlet ring part 63, and the upper gas outlet ring part 62 and the lower gas outlet ring part 63 are fixed in a matching manner.
In order to achieve better matching of the upper part 62 and the lower part 63 of the vent ring, the upper part 62 of the vent ring is provided with a cavity groove 633 matched with the lower part 63 of the vent ring.
In order to better realize the circulation of the second gas in the cavity, the lower part 63 of the gas outlet ring is provided with an annular cavity 631 and a plurality of gas outlet holes 632 distributed in an annular shape, the annular cavity 631 is communicated with the gas outlet holes 632, and the second gas inlet 2 is communicated with the annular cavity 631;
the second gas enters the second gas outlet ring 6 through the second gas inlet 2 and is discharged from the second gas outlet ring 6, and the process gas is diluted in the process to prevent a thin film from being deposited on the bottom layer of the annular pumping channel;
the second gas outlet ring 6, the cavity annular member and the partition plate 5 are detachable as combined members, and installation and later maintenance are facilitated.
The embodiment provides a thin film deposition method, which is carried out by adopting any one thin film deposition device in the above embodiments and comprises the following steps:
1) the process gas is introduced into the cavity through the first gas inlet 1, and simultaneously the second gas enters the bottom of the cavity through the second gas inlet 2;
2) the process gas gradually forms a film on the surface of the substrate;
3) the second gas forms a gas ring through the annular side wall 4 to reduce the temperature of the side wall of the cavity and dilute the concentration of a reaction source at the bottom of the cavity so as to improve the granularity of the cavity and the film;
4) the process gas and the second gas are exhausted from the pump gas inlet 3 through the annular pumping channel 8.
Preferably, the second gas is N2Or one of Ar or He.
The verification proves that the device provided by the embodiment can be synchronously carried out with the film deposition process, the cleaning time can be reduced, the productivity is improved, and the cavity and the film granularity are improved.
Comparative example 1
As shown in fig. 7, the chemical vapor deposition apparatus includes a chamber 21, a gas distribution mechanism, a substrate support base 23, at least one pumping hole 27 at the bottom of the chamber, a pump ring 271 surrounding the substrate support base, an exhaust channel formed between the pump ring 271 and the bottom plate of the chamber, a plurality of gas holes uniformly arranged on the pump ring 271, and a distance between the pump ring 271 and the bottom plate of the reaction chamber being greater than or equal to 50 mm.
In the structure, the lower part of the pump ring is easy to clean, particles are remained, and the granularity of the film and the cavity is influenced.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
Claims (10)
1. A thin film deposition apparatus, comprising: the device comprises a reaction chamber and a bearing seat, wherein the bearing seat is arranged in the reaction chamber and is used for bearing a substrate; the reaction chamber is characterized in that a first gas inlet (1) is arranged at the upper part of the reaction chamber, a second gas inlet (2) and a pump gas outlet (3) are arranged at the lower part of the reaction chamber, annular side walls (4) are arranged on two sides in the reaction chamber, a partition plate (5) and a second gas outlet ring (6) are further arranged in the reaction chamber, the second gas inlet (2) and the pump gas outlet (3) are distributed on two sides of the bearing seat, an annular gas outlet (7) is formed between the partition plate (5) and the second gas outlet ring (6), and the second gas inlet (2) is communicated with the second gas outlet ring (6); an annular pumping channel (8) communicated with the pumping port (3) is arranged above the pumping port, and the lower surface of the annular side wall (4) is in contact connection with the upper surface of the second gas outlet ring (6).
2. A thin film deposition apparatus according to claim 1, wherein the annular pumping port (7) formed between the partition plate (5) and the second gas exhaust ring (6) is angled.
3. A thin film deposition apparatus according to claim 1, wherein said separation plate (5) is formed of a plurality of annular plates, and the size of said annular suction opening (7) is adjusted in accordance with the setting of the radius length of the annular plates.
4. A thin film deposition apparatus according to claim 3, wherein the partition plate has a radius length of the annular plate near the pump suction port (3) larger than that of the annular plate at the other end of the partition plate.
5. A thin film deposition apparatus according to claim 1, wherein the annular side wall (4) is embedded with a side wall annular gas cavity (41), the second gas inlet (2) is communicated with the side wall annular gas cavity (41) through a pipeline, and the side wall annular gas cavity (41) is communicated with the second gas outlet ring (6).
6. A thin film deposition apparatus according to claim 5, wherein the second gas outlet ring (6) is provided with a plurality of holes (61) in a ring shape.
7. The thin film deposition apparatus according to claim 1, wherein the second gas outlet ring (6) comprises an upper gas outlet ring part (62) and a lower gas outlet ring part (63), and the upper gas outlet ring part (62) and the lower gas outlet ring part (63) are matched and fixed.
8. The thin film deposition apparatus according to claim 7, wherein the lower portion (63) of the gas outlet ring is provided with an annular cavity (631) and a plurality of gas outlet holes (632) distributed in an annular shape, the second gas inlet (2) is communicated with the annular cavity (631), and the upper portion (62) of the gas outlet ring is provided with a cavity groove (633) matched with the lower portion (63) of the gas outlet ring.
9. A thin film deposition method using the thin film deposition apparatus as claimed in any one of claims 1 to 8, comprising the steps of:
1) the process gas is introduced into the cavity through the first gas inlet (1), and simultaneously the second gas enters the bottom of the cavity through the second gas inlet (2);
2) the process gas gradually forms a film on the surface of the substrate;
3) the second gas forms a gas ring through the annular side wall (4) to reduce the temperature of the side wall of the cavity and dilute the concentration of a reaction source at the bottom of the cavity so as to improve the granularity of the cavity and the film;
4) the process gas and the second gas are exhausted from the pump gas inlet (3) through the annular pumping channel (8).
10. The method of claim 9, wherein the second gas is N, an inert gas2Or one of Ar or He.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110428360.1A CN113249707A (en) | 2021-04-21 | 2021-04-21 | Thin film deposition device and thin film deposition method |
| CN202210425819.7A CN114717538B (en) | 2021-04-21 | 2022-04-21 | Film deposition device and deposition method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110428360.1A CN113249707A (en) | 2021-04-21 | 2021-04-21 | Thin film deposition device and thin film deposition method |
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| CN113249707A true CN113249707A (en) | 2021-08-13 |
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| CN202110428360.1A Pending CN113249707A (en) | 2021-04-21 | 2021-04-21 | Thin film deposition device and thin film deposition method |
| CN202210425819.7A Active CN114717538B (en) | 2021-04-21 | 2022-04-21 | Film deposition device and deposition method thereof |
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| CN202210425819.7A Active CN114717538B (en) | 2021-04-21 | 2022-04-21 | Film deposition device and deposition method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114300336A (en) * | 2021-12-28 | 2022-04-08 | 拓荆科技股份有限公司 | Plasma reactor |
| CN116892016A (en) * | 2023-09-11 | 2023-10-17 | 上海星原驰半导体有限公司 | Process chamber device and wafer processing equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115125514B (en) * | 2022-08-01 | 2023-06-09 | 拓荆科技股份有限公司 | Intracavity pumping structure and semiconductor deposition equipment |
| CN115418624B (en) * | 2022-08-04 | 2023-08-25 | 拓荆科技股份有限公司 | Uniform air suction structure, vacuum chamber, film preparation device and method |
| CN115011948A (en) * | 2022-08-05 | 2022-09-06 | 拓荆科技(北京)有限公司 | Device for improving granularity of thin film and gas conveying method thereof |
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Also Published As
| Publication number | Publication date |
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| CN114717538A (en) | 2022-07-08 |
| CN114717538B (en) | 2023-10-31 |
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