CN116892016A - Process chamber device and wafer processing equipment - Google Patents
Process chamber device and wafer processing equipment Download PDFInfo
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- CN116892016A CN116892016A CN202311161052.2A CN202311161052A CN116892016A CN 116892016 A CN116892016 A CN 116892016A CN 202311161052 A CN202311161052 A CN 202311161052A CN 116892016 A CN116892016 A CN 116892016A
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- 238000000034 method Methods 0.000 title claims abstract description 144
- 238000012545 processing Methods 0.000 title claims abstract description 10
- 238000005507 spraying Methods 0.000 claims abstract description 38
- 230000002093 peripheral effect Effects 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000002243 precursor Substances 0.000 claims description 11
- 210000001503 joint Anatomy 0.000 claims description 10
- 230000006698 induction Effects 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 62
- 239000011261 inert gas Substances 0.000 abstract description 27
- 230000008021 deposition Effects 0.000 abstract description 11
- 239000012535 impurity Substances 0.000 abstract description 10
- 238000000151 deposition Methods 0.000 description 10
- 239000010409 thin film Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000007750 plasma spraying Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
The application relates to a process chamber device and wafer processing equipment, comprising: the device comprises a spraying part, a first air inlet interface, a second air inlet interface, a side wall component, a lifting component, a gate valve, an inductance coil, a plasma channel and a grabbing device. In actual use, the unreacted process gas, impurities and inert gas are pumped out of the surrounding space of the side ring to the peripheral space through the first exhaust channel, and the inert gas atmosphere is maintained in the spraying process, so that the inner wall of the side ring and the surface around the lifting column are protected, the deposition of the process gas on the inner wall of the side ring and the surface around the lifting column is avoided, and the condition that the working efficiency of the process chamber device is reduced due to pollution of the whole chamber by the gas deposition is avoided.
Description
Technical Field
The application relates to the technical field of semiconductor coating equipment, in particular to a process chamber device and wafer processing equipment.
Background
Chemical vapor deposition and atomic layer deposition are important application technologies in the field of thin film vacuum deposition, and are widely applied to the fields of chip manufacturing, thin film packaging, optics and the like. Chemical vapor deposition is the process of exposing a substrate to one or more different precursors to continuously undergo chemical reactions or chemical decomposition at its surface to form a thin film deposit. Atomic layer deposition is to control two or more precursors to enter a process chamber in a pulse form respectively, and to repeatedly perform saturated chemisorption and surface reaction in a circulating manner to obtain a deposited film.
In the prior art, the process gas is introduced into the process chamber from the upper part of the wafer carrier, so that the process gas is fully contacted with the surface of the wafer, and is adsorbed or subjected to chemical reaction, and then is discharged out of the process chamber through a vacuum pumping hole below the wafer carrier.
The above-mentioned process chamber apparatus inevitably has a thin film deposited on the inner cover of the process chamber during a long-time process, which greatly increases the risk of the thin film falling off the inner cover of the process chamber to generate particles, thereby contaminating the entire chamber as well as the substrate. Meanwhile, since the unreacted complete process gas and the by-product generated during the process pass through the lifting device at the bottom of the wafer carrier, there is a risk of depositing a thin film on the lifting device at the bottom of the wafer carrier. Especially, the lifting device is often in a mechanical motion state of reciprocating lifting, and films deposited on the surface of the lifting device are easy to fall off, so that the risk of pollution of a process chamber and a wafer by particles is further increased, the yield of chips is reduced, the service life of a cavity is shortened, and the maintenance frequency of equipment is increased.
Disclosure of Invention
Based on this, it is necessary to provide a process chamber device and a wafer processing apparatus, which are capable of solving the problem that the existing process chamber device has a thin film deposited in the process, so that the risk of particles generated by falling off the thin film from the process chamber inner cover is increased, and the whole chamber is polluted.
A process chamber apparatus, the process chamber apparatus comprising:
the spraying part gradually expands from top to bottom along the first direction, and comprises an inner cover and an outer cover, wherein the outer cover is sleeved on the inner cover, and a protection cavity is formed between the inner cover and the outer cover;
the first air inlet interface is connected with the upper end of the spraying part and is communicated with the inner cavity of the inner cover;
the second air inlet interface is connected with the upper end of the spraying part and is communicated with the protection cavity;
the side wall assembly comprises a side ring and a bottom plate, the upper end of the side ring is abutted to the bottom of the outer cover, the bottom plate is connected with one end, far away from the outer cover, of the side ring and covers the bottom of the side ring, a first exhaust channel is arranged in the side wall of the side ring and is communicated with the surrounding space and the peripheral space of the side ring, a process opening is formed in the side ring along a second direction for a wafer to enter and exit, and a lifting through hole is formed in the bottom plate along the first direction;
the lifting assembly comprises a lifting column and a carrying platform positioned in the side wall assembly, and one end of the lifting column penetrates through the lifting through hole and is connected with the carrying platform to be used for lifting or lowering the carrying platform;
the gate valve is used for opening or closing the process port;
the first direction is a vertical direction, and the second direction is perpendicular to the first direction.
In actual use, the wafer which is not sprayed is firstly sent to the carrying platform through the process port, the lifting column lifts the carrying platform to the opening of the spraying part, meanwhile, the gate valve closes the process port, inert gas is introduced into the protection cavity through the second air inlet, the inert gas is dispersed to the surrounding space of the side ring, then, the process gas is sprayed to the inner cavity of the inner cover through the first air inlet, so that the process gas is fully contacted with the surface of the wafer and is subjected to chemical reaction, the gate valve opens the process port after the spraying is completed, the lifting column lowers the carrying platform, and then, the wafer which is sprayed is taken out through the process port for the next procedure. Unreacted process gas, impurities and inert gas are pumped out of the surrounding space of the side ring to the peripheral space through the first exhaust channel, and the inert gas atmosphere is kept in the spraying process, so that the inner wall of the side ring and the surface around the lifting column are protected, the deposition of the process gas on the inner wall of the side ring and the surface around the lifting column is avoided, and the condition that the working efficiency of the process chamber device is reduced due to the pollution of the whole chamber by the gas deposition is avoided.
In one embodiment, the process chamber apparatus further comprises a channel assembly comprising a first control ring, a second control ring, a first ring plate, and a second ring plate;
the lower end of the first ring plate is in butt joint with the upper end of the second ring plate, the upper end of the first ring plate is in butt joint with the bottom of the outer cover, and the lower end of the second ring plate is in butt joint with the upper end of the side ring;
a convex ring is arranged on the inner side of the second ring plate, and the second control ring is abutted with the upper side of the convex ring and the inner side of the second ring plate;
the lower extreme of first control ring with the upper end butt of side ring, first control ring with have the control ring space between the second control ring, first annular plate with have annular second exhaust passage between the second annular plate, the control ring space pass through the second exhaust passage with first exhaust passage intercommunication.
In one embodiment, the process chamber assembly further comprises a first electrical temperature control ring and a second electrical Wen Konghuan;
the first electric temperature control ring is positioned inside the first control ring, and the second electric temperature control ring is positioned inside the second control ring.
In an embodiment, the upper surface of the second annular plate is provided with an annular exhaust groove, and the side wall of the annular exhaust groove, which is close to the axial direction of the second annular plate, is provided with an annular plate air inlet hole;
a control ring exhaust hole is formed in the side wall of the second control ring, one end of the control ring exhaust hole is communicated with the control ring in-loop space, and the other end of the control ring exhaust hole is communicated with the ring plate air inlet hole;
the bottom wall of the annular exhaust groove is provided with an annular plate air outlet hole, and one end of the annular plate air outlet hole, which is far away from the first control ring, is communicated with one end of the first exhaust channel, which is close to the spraying part.
In an embodiment, the side wall of the annular exhaust groove, which is close to the axis of the second annular plate, is provided with the annular plate air inlet hole along a third direction;
the second annular plate is provided with two annular plate air outlet holes which are symmetrically arranged along the second direction;
the side ring is provided with two first exhaust channels, and the two first exhaust channels are in one-to-one correspondence and are communicated with the two ring plate air outlet holes;
the first direction, the second direction and the third direction are perpendicular to each other.
In an embodiment, the process chamber device further includes a wafer inlet and outlet portion with two open ends, one end of the wafer inlet and outlet portion is communicated with the process port, the other end of the wafer inlet and outlet portion is matched with the gate valve, and the gate valve is used for opening or closing one end of the wafer inlet and outlet portion away from the process hole.
In one embodiment, the process chamber assembly further comprises a bellows and a connecting ring;
the corrugated pipe is sleeved on the lifting column, one end of the corrugated pipe is connected with the bottom of the bottom plate, the other end of the corrugated pipe is connected with the periphery of the connecting ring, and the corrugated pipe can stretch and retract along the first direction;
one end of the lifting column, which is far away from the carrying platform, is connected with the inner periphery of the connecting ring.
In one embodiment, the process chamber assembly further comprises a stage heating line and a heating device,
the lifting column is far away from one end of the carrying platform, an accommodating groove is formed in the lifting column, and the carrying platform heating pipeline is located in the accommodating groove and communicated with a heating device in the carrying platform and used for heating the carrying platform.
In one embodiment, the bottom plate is provided with a plurality of ventilation holes.
In an embodiment, the process chamber device further comprises an air inlet ring and an air inlet port, wherein the air inlet ring is sleeved on the outer side of the lifting column, and the upper end of the air inlet ring is connected with the lower side of the bottom plate;
the inside of the air inlet ring is provided with an annular air inlet cavity, one end of the air inlet port is connected with the air inlet ring and communicated with the annular air inlet cavity, and a plurality of air holes are communicated with the annular air inlet cavity.
In an embodiment, the process chamber device further includes a first gas-equalizing plate, a second gas-equalizing plate, and a third gas-equalizing plate;
the first air-homogenizing plate is provided with a plurality of first air-homogenizing holes along a first direction, the second air-homogenizing plate is provided with a plurality of second air-homogenizing holes along the first direction, and the third air-homogenizing plate is provided with a plurality of third air-homogenizing holes along the first direction;
the first air homogenizing plate, the second air homogenizing plate and the third air homogenizing plate are sequentially arranged along the direction of gradually expanding the spraying part and are connected with the inner wall of the inner cover;
the inner diameter of the first air equalizing hole, the inner diameter of the second air equalizing hole and the inner diameter of the third air equalizing hole are gradually decreased.
In one embodiment, the process chamber apparatus further comprises a precursor shower plate and a shielding gas annular plate;
the precursor spraying plate is provided with a plurality of spraying holes along a first direction, and is connected with the lower end of the inner cover;
the gas protection annular plate is provided with a plurality of gas protection holes, the inner periphery of the gas protection annular plate is connected with the lower end of the inner cover, and the outer periphery of the gas protection annular plate is connected with the lower end of the outer cover.
In an embodiment, the process chamber device further includes an upper ring cover plate, the lower end of the upper ring cover plate is abutted to the upper ends of the first control ring and the first ring plate, and the inner side of the upper ring cover plate is abutted to the lower end of the outer cover.
An embodiment of the present application also provides a wafer processing apparatus, including: the plasma chamber comprises an induction coil, a plasma channel, a grabbing device and the process chamber device;
the induction coil is sleeved on the plasma channel, one end of the plasma channel is connected with the upper end of the spraying part and is communicated with the inside of the inner cover, and the other end of the plasma channel is used for introducing plasma;
the grabbing device is used for placing the wafer which is not sprayed on the carrier or taking the wafer which is sprayed from the carrier.
In actual use, the wafer processing equipment firstly uses the grabbing device to send the non-sprayed wafer to the carrying platform through the process port, the lifting column lifts the carrying platform to the opening of the spraying part, meanwhile, the gate valve closes the process port, inert gas is introduced into the protection cavity through the second air inlet, the inert gas is dispersed to the surrounding space of the side ring, then the process gas is sprayed to the inner cavity of the inner cover through the first air inlet, the inductance coil and the plasma channel realize plasma spraying, so that the process gas is fully contacted with the surface of the wafer and chemical reaction is carried out, the gate valve opens the process port after the spraying is completed, the lifting column lowers the carrying platform, and then the wafer after the spraying is taken out through the process port by using the grabbing device for the next procedure. Unreacted process gas, impurities and inert gas are pumped out of the surrounding space of the side ring to the peripheral space through the first exhaust channel, and the inert gas atmosphere is kept in the spraying process, so that the inner wall of the side ring and the surface around the lifting column are protected, the deposition of the process gas on the inner wall of the side ring and the surface around the lifting column is avoided, and the condition that the working efficiency of the process chamber device is reduced due to the pollution of the whole chamber by the gas deposition is avoided.
Drawings
Fig. 1 is a schematic structural view of a process chamber device according to an embodiment.
Fig. 2 is a schematic structural diagram of another view of fig. 1.
Fig. 3 is an exploded view of fig. 1.
Fig. 4 is a cross-sectional view of the first and second directions of fig. 1.
Fig. 5 is a cross-sectional view of the first and third directions of fig. 1.
Fig. 6 is a cross-sectional view of fig. 1 along a first direction and a second direction.
Reference numerals illustrate:
100-process chamber means;
110-a spray section; 111-an inner cover; 112-an outer cover; 113-a protection cavity; 114-upper ring cover plate;
120-a first air inlet interface;
130-a second air intake interface;
140-sidewall assembly; 141-side rings; 142-a bottom plate; 143-a first exhaust passage; 144-process port; 145-lifting through holes; 146-wafer access;
150-a lifting assembly; 151-lifting columns; 152-stage; 153-bellows; 154-connecting ring; 155—stage heating line; 156-heating means; 157-a receiving groove;
160-channel assembly; 161-a first control loop; 162-a second control loop; 163-a first ring plate; 164-a second ring plate; 165-a collar; 166-a second exhaust passage; 167-a first electrical temperature control loop; 168-a second electricity Wen Konghuan;
170-an annular exhaust groove; 171-ring plate air inlet holes; 172-control ring vent holes; 173-control ring gap; 174-ring plate air outlet holes; 175-vent holes; 176-gas inlet ring; 177-an air inlet port; 178-a first connection port; 179-a second connection port;
180-a first gas-equalizing plate; 181-a second gas-equalizing plate; 182-a third gas-equalizing plate; 183-first air equalizing holes; 184-second air equalizing holes; 185-third air equalizing holes; 186-precursor shower plate; 187-a protective gas annular plate; 188-spray holes; 189-shielding gas holes;
OX-first direction; OY-second direction; OZ-third direction.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The present application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the application, whereby the application is not limited to the specific embodiments disclosed below.
In the description of the present application, it should be understood that, if any, these terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., are used herein with respect to the orientation or positional relationship shown in the drawings, these terms refer to the orientation or positional relationship for convenience of description and simplicity of description only, and do not indicate or imply that the apparatus or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the application.
Furthermore, the terms "first," "second," and the like, if any, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the terms "plurality" and "a plurality" if any, mean at least two, such as two, three, etc., unless specifically defined otherwise.
In the present application, unless explicitly stated and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly. For example, the two parts can be fixedly connected, detachably connected or integrated; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, the meaning of a first feature being "on" or "off" a second feature, and the like, is that the first and second features are either in direct contact or in indirect contact through an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that if an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. If an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein, if any, are for descriptive purposes only and do not represent a unique embodiment.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a process chamber device 100 according to an embodiment of the application, and the process chamber device 100 according to an embodiment of the application includes: a shower portion 110, a first air inlet port 120, a second air inlet port 130, a sidewall assembly 140, a lift assembly 150, and a gate valve (not shown).
Referring to fig. 1, 4 and 5, in the process chamber apparatus 100, the spraying portion 110 gradually expands from top to bottom along the first direction OX, the spraying portion 110 includes an inner cover 111 and an outer cover 112, the outer cover 112 is sleeved on the inner cover 111, and a protection cavity 113 is formed between the inner cover 111 and the outer cover 112. The first air inlet port 120 is connected to the upper end of the shower portion 110 and communicates with the inner cavity of the inner cover 111. The second air inlet port 130 is connected to the upper end of the shower part 110 and communicates with the protection chamber 113. The side wall assembly 140 includes a side ring 141 and a bottom plate 142, the upper end of the side ring 141 is abutted to the bottom of the outer cover 112, the bottom plate 142 is connected to one end of the side ring 141 far away from the outer cover 112 and covers the bottom of the side ring 141, a first exhaust channel 143 is disposed in the side wall of the side ring 141, the first exhaust channel 143 communicates with the surrounding space and the peripheral space of the side ring 141, the side ring 141 is provided with a process opening 144 along the second direction OY for the wafer to enter and exit, and the bottom plate 142 is provided with a lifting through hole 145 along the first direction OX. The first direction OX is a vertical direction, and the second direction OY is perpendicular to the first direction OX. The lifting assembly 150 includes a lifting column 151 and a carrier 152 disposed in the sidewall assembly 140, and one end of the lifting column 151 is disposed through the lifting through hole 145 and connected to the carrier 152 for lifting or lowering the carrier 152. The gate valve is used to open or close the process orifice 144.
In practical use, the above-mentioned process chamber device 100 is firstly used to deliver an uncoated wafer to the stage 152 through the process port 144, the lifting column 151 lifts the stage 152 to the opening of the spraying portion 110, meanwhile, the gate valve closes the process port 144, inert gas is introduced into the protection cavity 113 through the second air inlet, the inert gas is dispersed to the surrounding space of the side ring 141, and then, the process gas is sprayed into the inner cavity of the inner cover 111 through the first air inlet, so that the process gas is fully contacted with the wafer surface and chemically reacts, after the spraying is completed, the gate valve opens the process port 144, the lifting column 151 lowers the stage 152, and then, the sprayed wafer is taken out through the process port 144 for the next process. Unreacted process gas, impurities and inert gas are pumped out of the surrounding space of the side ring 141 to the peripheral space through the first exhaust passage 143, and the inert gas atmosphere is maintained in the spraying process, so that the inner wall of the side ring 141 and the surface around the lifting column 151 are protected, deposition of the process gas on the inner wall of the side ring 141 and the surface around the lifting column 151 is avoided, and further, the condition that the working efficiency of the process chamber device 100 is reduced due to pollution of the whole chamber by the gas deposition is avoided.
The generation and introduction of the process gas are not described herein in detail, and the structure of the first air inlet 120 only needs to satisfy that the process gas can be smoothly introduced into the process chamber device 100 for spraying the wafer.
Specifically, the inner and outer covers 111 and 112 of the shower portion 110 each diverge from top to bottom in the first direction OX.
In one embodiment, the process chamber apparatus 100 further comprises a channel assembly 160, the channel assembly 160 comprising a first control ring 161, a second control ring 162, a first ring plate 163, and a second ring plate 164. The lower end of the first ring plate 163 is in contact with the upper end of the second ring plate 164, the upper end of the first ring plate 163 is in contact with the bottom of the housing 112, and the lower end of the second ring plate 164 is in contact with the upper end of the side ring 141. The second ring plate 164 is provided with a collar 165 on the inner side thereof, and the second control ring 162 abuts against the upper side of the collar 165 and the inner side of the second ring plate 164. The lower end of the first control ring 161 is abutted against the upper end of the side ring 141, since the second control ring 162 is suspended by the boss 165, so that a control ring gap 173 can be provided between the first control ring 161 and the second control ring 162, a second annular exhaust passage 166 is provided between the first ring plate 163 and the second ring plate 164, the control ring gap 173 communicates with the first exhaust passage 143 through the second exhaust passage 166, so that unreacted process gas, impurities and inert gas can be extracted from the surrounding space of the side ring 141 to the peripheral space through the control ring gap 173, the second exhaust passage 166 and the first exhaust passage 143, and therefore the probability of the inner wall of the side ring 141 contacting the unreacted process gas and impurities is further reduced, and simultaneously, since the second control ring 162 is abutted against the upper side of the boss 165 and abutted against the inner side of the second ring plate 164. The lower end of the first control ring 161 is abutted against the upper end of the side ring 141, so that the first control ring 161 and the second control ring 162 can be removed from the first ring plate 163 and the second ring plate 164, respectively, for cleaning or replacement when the process gas or impurities are accumulated to a certain extent in the first control ring 161 and the second control ring 162, thereby facilitating maintenance of the process chamber apparatus 100.
Specifically, the second control ring 162 and the convex ring 165 hang the second control ring 162 on the convex ring 165 through a hook structure and are abutted against the second ring plate 164, or are fixed through a fastener or the like, so long as the condition that the second control ring 162 is detachably abutted against the second ring plate 164 and a control ring gap 173 is formed between the second control ring 162 and the first control ring 161 is satisfied, and the specific connection manner of the second control ring 162 and the second ring plate 164 is not described herein.
Referring to fig. 1, 4, 5 and 6, in an embodiment, the process chamber apparatus 100 further includes a first electric temperature control ring 167 and a second electric power Wen Konghuan, the first electric temperature control ring 167 is located inside the first control ring 161, and the second electric power Wen Konghuan is located inside the second control ring 162, so that the temperatures of the first control ring 161 and the second control ring 162 can be controlled by the first electric temperature control ring 167 and the second electric temperature control ring 168, so that the temperatures satisfy the conditions that the process gas cannot be deposited on the surfaces of the first control ring 161 and the second control ring 162 and cannot be decomposed, and specific temperature control parameters refer to different temperature parameters of the deposition and the decomposition of the process gas, which will not be described herein.
Preferably, the process chamber apparatus 100 further comprises a first connection port 178 and a second connection port 179, wherein the first connection port 178 is connected with the first electric temperature control ring 167, the first connection port 178 extends out of the first control ring 161 away from the first electric temperature control ring 167, the second connection port 179 is connected with the second electric temperature control ring 168, and the second connection port 179 extends out of the sidewall assembly 140 away from the second electric temperature control ring 168, so that the first electric temperature control ring 167 and the second electric temperature control ring 168 can be respectively electrified and temperature-regulated through the first connection port 178 and the second connection port 179.
Further, a power source is disposed within the sidewall assembly 140 and is connected to the first electrical temperature control ring 167 and the second electrical temperature control ring 168, respectively, to energize the first electrical temperature control ring 167 and the second electrical Wen Konghuan.
In other embodiments, the temperature of the first control ring 161 and the second control ring 162 may be adjusted by other temperature adjusting components, such as a hydraulic expansion type temperature controller, a pressure type temperature controller, an electronic type temperature controller, etc., which only needs to be set inside the first control ring 161 and the second control ring 162, and the temperature of the first control ring 161 and the second control ring 162 may be adjusted, which will not be described herein.
Referring to fig. 1, 4, 5 and 6, in an embodiment, an annular air vent 170 is formed on the upper surface of the second ring plate 164, and an annular air inlet 171 is formed on a sidewall of the annular air vent 170 adjacent to the axial direction of the second ring plate 164. The side wall of the second control ring 162 is provided with a control ring vent hole 172, one end of the control ring vent hole 172 is communicated with the control ring gap 173, and the other end is communicated with the ring plate air inlet hole 171. The annular exhaust groove 170 has a bottom wall provided with an annular plate air outlet hole 174, and one end of the annular plate air outlet hole 174 away from the first control ring 161 is communicated with one end of the first exhaust channel 143 close to the spraying part 110, so that the process gas, impurities and inert gas sequentially pass through the control ring gap 173, the control ring air outlet hole 172, the annular plate air inlet hole 171, the annular exhaust groove 170, the annular plate air outlet hole 174 and the first exhaust channel 143 to be discharged to the peripheral space, wherein the annular plate 163 and the second annular plate 164 are abutted to form the second exhaust channel 166 by the annular exhaust groove 170.
Specifically, the first exhaust channel 143 is externally connected with a vacuum device for extracting the exhausted gas, and may specifically be a vacuum pump, a hydraulic pump, etc.
Referring to fig. 1, 3, 4, 5 and 6, in an embodiment, a sidewall of the annular exhaust groove 170 near the axis of the second annular plate 164 is provided with an annular plate air inlet hole 171 along a third direction OZ, wherein the first direction OX, the second direction OY and the third direction OZ are perpendicular to each other. The second annular plate 164 is provided with two annular plate air outlet holes 174, and the annular plate air outlet holes 174 are symmetrically arranged along the second direction OY. The side ring 141 is provided with two first exhaust passages 143, and the two first exhaust passages 143 are in one-to-one correspondence and communicate with the two annular plate air outlet holes 174, so that gas can be uniformly discharged from the two annular plate air outlet holes 174, and gas discharge unsmooth caused by uneven distribution of the annular air outlet holes on the second annular plate 164 is prevented.
Preferably, the number of the ring plate air outlet holes 174 may be plural, and the plurality of ring plate air outlet holes 174 may be uniformly arranged around the circumference of the second ring plate 164, so long as the process gas, impurities and inert gas are sequentially discharged to the peripheral space through the control ring gap 173, the control ring air outlet hole 172, the ring plate air inlet hole 171, the ring air outlet groove 170, the ring plate air outlet hole 174 and the first air outlet channel 143.
Referring to the figure, in an embodiment, the process chamber apparatus 100 further includes a wafer inlet and outlet portion 146 with two open ends, one end of the wafer inlet and outlet portion 146 is communicated with the process port 144, the other end is matched with a gate valve, and the gate valve is used for opening or closing one end of the wafer inlet and outlet portion 146 away from the process hole, so that the wafer inlet and outlet portion 146 can be communicated with an inlet and outlet of a subsequent process, and the gate valve is arranged at the communication position, thereby facilitating the automation of the vacuum environment in the whole process.
Referring to fig. 1, 2, 4, 5, and 6, in one embodiment, the process chamber apparatus 100 further includes a bellows 153 and a connecting ring 154. The bellows 153 is sleeved on the lifting column 151, one end of the bellows 153 is connected with the bottom of the bottom plate 142, the other end of the bellows 153 is connected with the periphery of the connecting ring 154, the bellows 153 can stretch and retract along the first direction OX, one end of the lifting column 151 away from the carrying platform 152 is connected with the inner periphery of the connecting ring 154, and therefore the lifting column 151 lifts the bellows 153 to shrink, the lifting column 151 descends the bellows 153 to stretch, and the lifting column 151 and the lifting through hole 145 are sealed in a moving mode through the bellows 153.
Referring to fig. 1, 4 and 6, in an embodiment, the process chamber apparatus 100 further includes a stage 152 heating pipeline and a heating device 156, an accommodating groove 157 is formed at an end of the lifting column 151 away from the stage 152, and the stage 152 heating pipeline is located in the accommodating groove 157 and is communicated with the heating device 156 in the stage 152, so as to heat the stage 152.
Referring to fig. 1, 3 and 6, in one embodiment, the bottom plate 142 is provided with a plurality of ventilation holes 175, so that inert gas can be introduced into the process chamber apparatus 100 through the ventilation holes 175, thereby accelerating the formation of an inert gas atmosphere.
Preferably, the pressure of the inert gas entering through the vent hole 175 and the inert gas introduced through the second gas inlet at the control ring gap 173 is controlled to be equal to the pressure of the process gas at the control ring gap 173, so that the process gas can be sprayed onto the wafer surface smoothly.
Referring to fig. 1, 4 and 6, in an embodiment, the process chamber apparatus 100 further includes an air inlet ring 176 and an air inlet port 177, the air inlet ring 176 is sleeved on the outer side of the lifting column 151, and an upper end of the air inlet ring 176 is connected with the lower side of the bottom plate 142. The inside of intake ring 176 is provided with annular inlet chamber, and intake port 177's one end is connected and is linked together with annular inlet chamber with intake ring 176, and a plurality of air vents 175 are linked together with annular inlet chamber to can let in inert gas through an intake port 177, inert gas evenly gets into the enclosing space of side ring 141 through intake ring 176 and a plurality of air vents 175.
Referring to fig. 1, 4 and 6, in one embodiment, the process chamber apparatus 100 further includes a first gas distribution plate 180, a second gas distribution plate 181 and a third gas distribution plate 182. The first gas-equalizing plate 180 is provided with a plurality of first gas-equalizing holes 183 along the first direction OX, the second gas-equalizing plate 181 is provided with a plurality of second gas-equalizing holes 184 along the first direction OX, and the third gas-equalizing plate 182 is provided with a plurality of third gas-equalizing holes 185 along the first direction OX. The first gas-equalizing plate 180, the second gas-equalizing plate 181, and the third gas-equalizing plate 182 are sequentially arranged along the direction in which the shower portion 110 diverges and are connected to the inner wall of the inner cover 111. The inner diameters of the first air equalizing holes 183, the second air equalizing holes 184 and the third air equalizing holes 185 are gradually decreased in order, so that the spraying of the process gas to the wafer is realized through the first air equalizing plate 180, the second air equalizing plate 181 and the third air equalizing plate 182, and uneven spraying of the process gas on the wafer is prevented.
Referring to fig. 1, 4 and 6, in an embodiment, the process chamber apparatus 100 further includes a precursor shower plate 186 and a shielding gas annular plate 187, the precursor shower plate 186 is provided with a plurality of shower holes 188 along the first direction OX, the precursor shower plate 186 is connected with the lower end of the inner cover 111, the shielding gas annular plate 187 is provided with a plurality of shielding gas holes 189, the inner circumference of the shielding gas annular plate 187 is connected with the lower end of the inner cover 111, and the outer circumference of the shielding gas annular plate 187 is connected with the lower end of the outer cover 112 so as to further uniformly divide the process gas through the precursor shower plate 186, and simultaneously, the shielding gas is uniformly divided through the shielding gas holes 189.
Preferably, the process chamber device 100 further includes a plasma generator in communication with the inner cavity of the inner cover 111, and the plasma generator is used for introducing plasma into the inner cavity of the inner cover 111, and the specific structure is referred to the prior art and will not be described herein.
Referring to fig. 1, 3 and 6, in an embodiment, the process chamber apparatus 100 further includes an upper ring cover 114, the lower end of the upper ring cover 114 is abutted with the upper ends of the first control ring 161 and the first ring 163, and the inner side of the upper ring cover 114 is abutted with the lower end of the outer cover 112, so that the top can be more flat and beautiful through the upper ring cover 114, and the contact area between the first ring 163 and the first control ring 161 can be covered, so that a further sealing effect can be achieved.
An embodiment of the present application also provides a wafer processing apparatus, including: an inductive coil, a plasma channel, a gripping device and a process chamber device 100. The induction coil is sleeved on the plasma channel, one end of the plasma channel is connected with the upper end of the spraying part 110 and is communicated with the inside of the inner cover 111, and the other end of the plasma channel is used for introducing plasma, so that the plasma from the plasma channel is sprayed through the induction coil. The gripping device is used to place an unsprayed wafer on the carrier 152 or to take out a sprayed wafer from the carrier 152.
In practical use, the wafer processing apparatus described above firstly uses the gripping device to send the non-sprayed wafer to the carrier 152 through the process port 144, the lifting column 151 lifts the carrier 152 to the opening of the spraying portion 110, meanwhile, the gate valve closes the process port 144, inert gas is introduced into the protection cavity 113 through the second air inlet, the inert gas is dispersed to the surrounding space of the side ring 141, then, the process gas is sprayed to the inner cavity of the inner cover 111 through the first air inlet, the inductance coil and the plasma channel realize plasma spraying, so that the process gas fully contacts with the wafer surface and chemically reacts, the gate valve opens the process port 144 after the spraying is completed, the lifting column 151 lowers the carrier 152, and then, the sprayed wafer is taken out through the process port 144 by using the gripping device for the next process. Unreacted process gas, impurities and inert gas are pumped out of the surrounding space of the side ring 141 to the peripheral space through the first exhaust passage 143, and the inert gas atmosphere is maintained in the spraying process, so that the inner wall of the side ring 141 and the surface around the lifting column 151 are protected, deposition of the process gas on the inner wall of the side ring 141 and the surface around the lifting column 151 is avoided, and further, the condition that the working efficiency of the process chamber device 100 is reduced due to pollution of the whole chamber by the gas deposition is avoided.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (12)
1. A process chamber assembly, the process chamber assembly comprising:
the spraying part gradually expands from top to bottom along the first direction, and comprises an inner cover and an outer cover, wherein the outer cover is sleeved on the inner cover, and a protection cavity is formed between the inner cover and the outer cover;
the first air inlet interface is connected with the upper end of the spraying part and is communicated with the inner cavity of the inner cover;
the second air inlet interface is connected with the upper end of the spraying part and is communicated with the protection cavity;
the side wall assembly comprises a side ring and a bottom plate, the upper end of the side ring is abutted to the bottom of the outer cover, the bottom plate is connected with one end, far away from the outer cover, of the side ring and covers the bottom of the side ring, a first exhaust channel is arranged in the side wall of the side ring and communicated with the surrounding space and the peripheral space of the side ring, a process opening is formed in the side ring along a second direction for a wafer to enter and exit, a lifting through hole is formed in the bottom plate along the first direction, and a plurality of vent holes are formed in the bottom plate;
a channel assembly comprising a first control ring, a second control ring, a first ring plate, and a second ring plate; the lower end of the first ring plate is in butt joint with the upper end of the second ring plate, the upper end of the first ring plate is in butt joint with the bottom of the outer cover, and the lower end of the second ring plate is in butt joint with the upper end of the side ring; the inner side of the second ring plate is provided with a convex ring, and the second control ring is in butt joint with the upper side of the convex ring and is detachably in butt joint with the inner side of the second ring plate; the lower end of the first control ring is in butt joint with the upper end of the side ring and is in detachable butt joint with the inner side of the first ring plate, a control ring gap is formed between the first control ring and the second control ring, an annular second exhaust channel is formed between the first ring plate and the second ring plate, and the control ring gap is communicated with the first exhaust channel through the second exhaust channel;
the lifting assembly comprises a lifting column and a carrying platform positioned in the side wall assembly, and one end of the lifting column penetrates through the lifting through hole and is connected with the carrying platform to be used for lifting or lowering the carrying platform;
the gate valve is used for opening or closing the process port;
the first direction is a vertical direction, and the second direction is perpendicular to the first direction.
2. The process chamber assembly of claim 1, further comprising a first electrical temperature control ring and a second electrical Wen Konghuan;
the first electric temperature control ring is positioned inside the first control ring, and the second electric temperature control ring is positioned inside the second control ring.
3. The process chamber device according to claim 1, wherein an annular exhaust groove is formed in the upper surface of the second annular plate, and an annular plate air inlet hole is formed in the side wall, close to the axis direction of the second annular plate, of the annular exhaust groove;
a control ring exhaust hole is formed in the side wall of the second control ring, one end of the control ring exhaust hole is communicated with the control ring in-loop space, and the other end of the control ring exhaust hole is communicated with the ring plate air inlet hole;
the bottom wall of the annular exhaust groove is provided with an annular plate air outlet hole, and one end of the annular plate air outlet hole, which is far away from the first control ring, is communicated with one end of the first exhaust channel, which is close to the spraying part.
4. The process chamber assembly of claim 3, wherein the annular exhaust groove has a sidewall adjacent to the axis of the second annular plate with the annular plate air inlet opening in a third direction;
the second annular plate is provided with two annular plate air outlet holes which are symmetrically arranged along the second direction;
the side ring is provided with two first exhaust channels, and the two first exhaust channels are in one-to-one correspondence and are communicated with the two ring plate air outlet holes;
the first direction, the second direction and the third direction are perpendicular to each other.
5. The process chamber assembly of claim 1, further comprising a wafer access portion having two open ends, one end of the wafer access portion being in communication with the process port and the other end being in engagement with the gate valve, the gate valve being configured to open or close an end of the wafer access portion remote from the process port.
6. The process chamber assembly of claim 1, further comprising a bellows and a connecting ring;
the corrugated pipe is sleeved on the lifting column, one end of the corrugated pipe is connected with the bottom of the bottom plate, the other end of the corrugated pipe is connected with the periphery of the connecting ring, and the corrugated pipe can stretch and retract along the first direction;
one end of the lifting column, which is far away from the carrying platform, is connected with the inner periphery of the connecting ring.
7. The process chamber assembly of claim 6, further comprising a stage heating line and a heating device,
the lifting column is far away from one end of the carrying platform, an accommodating groove is formed in the lifting column, and the carrying platform heating pipeline is located in the accommodating groove and communicated with a heating device in the carrying platform and used for heating the carrying platform.
8. The process chamber assembly of claim 1, further comprising an air inlet ring and an air inlet port, wherein the air inlet ring is sleeved outside the lifting column, and wherein the upper end of the air inlet ring is connected with the lower side of the bottom plate;
the inside of the air inlet ring is provided with an annular air inlet cavity, one end of the air inlet port is connected with the air inlet ring and communicated with the annular air inlet cavity, and a plurality of air holes are communicated with the annular air inlet cavity.
9. The process chamber assembly of claim 1, further comprising a first gas uniformity plate, a second gas uniformity plate, and a third gas uniformity plate;
the first air-homogenizing plate is provided with a plurality of first air-homogenizing holes along a first direction, the second air-homogenizing plate is provided with a plurality of second air-homogenizing holes along the first direction, and the third air-homogenizing plate is provided with a plurality of third air-homogenizing holes along the first direction;
the first air homogenizing plate, the second air homogenizing plate and the third air homogenizing plate are sequentially arranged along the direction of gradually expanding the spraying part and are connected with the inner wall of the inner cover;
the inner diameter of the first air equalizing hole, the inner diameter of the second air equalizing hole and the inner diameter of the third air equalizing hole are gradually decreased.
10. The process chamber assembly of claim 9, further comprising a precursor shower plate and a shielding gas annular plate;
the precursor spraying plate is provided with a plurality of spraying holes along a first direction, and is connected with the lower end of the inner cover;
the gas protection annular plate is provided with a plurality of gas protection holes, the inner periphery of the gas protection annular plate is connected with the lower end of the inner cover, and the outer periphery of the gas protection annular plate is connected with the lower end of the outer cover.
11. The process chamber assembly of claim 1, further comprising an upper ring cover plate having a lower end in abutment with the first control ring and an upper end of the first ring plate, an inner side of the upper ring cover plate in abutment with a lower end of the housing.
12. A wafer processing apparatus, comprising: an inductor coil, a plasma channel, a gripping device and a process chamber device according to any of claims 1-11;
the induction coil is sleeved on the plasma channel, one end of the plasma channel is connected with the upper end of the spraying part and is communicated with the inside of the inner cover, and the other end of the plasma channel is used for introducing plasma;
the grabbing device is used for placing the wafer which is not sprayed on the carrier or taking the wafer which is sprayed from the carrier.
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Application publication date: 20231017 |