TWI407494B - Apparatus for semiconductor processing - Google Patents

Abstract

An apparatus for semiconductor processing capable of performing semiconductor processing such as etching, depositing, etc. on a surface of a substrate such as a wafer. The apparatus for semiconductor processing, comprises: a reaction chamber having a gate through which a substrate to be processed is transferred; one or more shower heads disposed at an upper side of the reaction chamber, for spraying gas so as to perform semiconductor processing; one or more wafer supporting units disposed at an inner lower side of the reaction chamber in correspondence to each of the shower heads, for supporting the substrate; a processing space forming unit disposed in the reaction chamber, for forming a processing space for semiconductor processing by sealing the shower heads and the wafer supporting units; and an exhausting system connected to the processing space forming unit for controlling a pressure and air exhaustion inside the reaction chamber and the processing space formed by the processing space forming unit.

Description

Semiconductor processing device

The present invention relates to a semiconductor processing apparatus, and more particularly to a semiconductor processing apparatus capable of performing semiconductor processing, such as etching, deposition, etc., on a surface of a substrate such as a wafer.

Korean Patent Publication No. 10-0364089 discloses a semiconductor processing apparatus having a pair of wafer support units.

FIG. 1 is a cross-sectional view of a conventional semiconductor processing apparatus, and FIG. 2 is a vertical cross-sectional view taken along line A-A of FIG.

As shown in FIG. 1 and FIG. 2, the conventional semiconductor processing apparatus includes a processing chamber 10 and a transfer chamber 60, wherein the processing chamber 10 has a pair of wafer supporting units 12, and the transfer chamber 60 has a For the transfer robot 30.

The pair of wafer support units 12 are disposed in the processing chamber 10. After the substrate 1 is mounted on the wafer support unit 12 through the transfer robot 30, the processing chamber 10 is sealed by a gate valve 54. Between the processing chamber 10 and the transfer chamber 60. In the hermetic processing chamber 10, semiconductor processing such as etching, deposition, annealing, and the like is performed.

However, a conventional semiconductor processing apparatus having a plurality of wafer supporting units disclosed in Japanese Patent Laid-Open Publication No. 10-0364089 has the following problems.

First, since the processing space for performing semiconductor processing is on the basis of the substrate It is said to be formed, so that uniform processing conditions cannot be formed in the processing chamber.

Secondly, the wafer support units inside the processing chamber cannot be separated from each other, thus causing inferior processing such as occurrence of reaction gas, gas mixing, and plasma source interference, thereby reducing the reliability of semiconductor processing.

Third, the time to wait for the cooled substrate to be processed increases, thereby increasing the overall time for semiconductor processing. Therefore, the productivity is lowered.

Fourth, since the overall time of semiconductor processing increases, the substrate is exposed to the air for a long time, and is thus contaminated by dust or foreign matter. Therefore, the yield of semiconductor processing is reduced.

In view of the above problems, it is a primary object of the present invention to provide a semiconductor processing apparatus for forming a uniform processing atmosphere by symmetry forming a processing space on a substrate basis, thereby enhancing the reliability of the entire processing.

In addition, the present invention provides a semiconductor processing apparatus that can provide a processing space formed by a plurality of wafer supporting units by separating each other, thereby providing reliability of the entire processing.

Furthermore, the present invention provides a semiconductor processing apparatus for reducing the waiting time for cooling a processed substrate by additionally providing a cartridge unit, thereby shortening the entire processing time and preventing dust from being exposed to the air by the substrate, thereby reducing dust Or substrate contamination caused by impurities to a minimum.

Moreover, the present invention provides a semiconductor processing apparatus that can be provided for execution The best conditions for semiconductor processing are to each processing space.

Therefore, in order to achieve the above object, a semiconductor processing apparatus disclosed in the present invention comprises: a reaction chamber, one or more shower heads, one or more wafer support units, a processing space forming unit, and an exhaust system. The reaction chamber has an inlet through which the substrate to be processed is transported. The nozzle is disposed on the upper side of the reaction chamber for spraying gas, thereby performing semiconductor processing. The wafer supporting unit is disposed on the lower side of the reaction chamber corresponding to each of the nozzles for supporting the substrate. The processing space forming unit is disposed in the reaction chamber for forming and sealing a processing space for semiconductor processing surrounding the head and the wafer supporting unit. The exhaust system is coupled to the processing space forming unit for controlling the pressure inside the processing space formed by the reaction chamber and the processing space forming unit and the air discharge.

Between the wafer support unit and the inlet, there is further provided a transfer unit for transferring the substrate to be processed to the wafer support unit, or transferring the processed substrate through the inlet.

The transmission unit can be implemented as one or more robots for transferring the substrate, one end of the robot is connected to one of the rotary driving units disposed in the reaction chamber, and the other end of the robot is reciprocated between the wafer supporting unit and the inlet. Rotate. The robots can be set to have different heights from each other to prevent mutual interference when rotating.

A box unit is further disposed between the transmission unit and the inlet for carrying a plurality of substrates. The cassette unit can be set to be vertically movable through a drive unit. The cassette unit can include a temperature controller to control the temperature of the substrate being carried.

The processing space forming unit can be implemented as a cylinder valve, which is disposed in the reaction chamber and enters It can move vertically and form a processing space when moving up. The cylinder valve can be connected to an exhaust pipe, wherein the exhaust pipe is connected to the exhaust system.

A gas injection unit is further provided in the cylinder valve for injecting gas to the edge of the substrate, thereby preventing the substrate from being deposited.

The gas injection unit may include a gas injection ring located inside the cylinder valve and having a plurality of injection holes, and the gas injection ring is connected to one of the external air supply units through an air supply pipe.

The cylinder valve is further equipped with a temperature controller to control the temperature of the cylinder valve in accordance with semiconductor processing conditions.

The inner wall of the cylinder valve is further provided with a gasket to protect a sealing member. Here, the lower end of the liner may extend below the lower surface of a substrate to prevent the appearance of plasma.

One end of the cylinder valve is located between the treatment space and the outer surface of the cylinder valve to protect the sealing element. Moreover, the height of the portion of the cylinder valve to which the sealing member is mounted is different from the height of the portion of the contact processing space.

The features and implementations of the present invention are described in detail below with reference to the drawings.

Now, the semiconductor processing apparatus of the present invention will be described in detail.

As shown in FIG. 3, FIG. 4 and FIG. 5, the semiconductor processing apparatus of the present invention comprises a reaction chamber 100, one or more wafer support units 120, a processing space forming unit, and An exhaust system. Reaction chamber 100 has an inlet 110, to transfer the substrate 1 subjected to semiconductor processing through it. The wafer supporting unit 120 is disposed on the inner lower side of the reaction chamber 100 for supporting the substrate 1. The processing space forming unit is disposed in the reaction chamber 100, thereby sealing the space including the wafer supporting unit 120 by vertical reciprocation, thereby forming a processing space S for semiconductor processing. The exhaust system is connected to the processing space forming unit for discharging the gas inside the processing space S.

The reaction chamber 100 may be an assembly of a lower chamber 101 and a top cover 102, wherein the top cover 102 is coupled to the lower chamber 101. The lower chamber 101 is formed such that its upper surface can be partially cleaved. The lower horizontal plate 151 is disposed at the opening of the lower chamber 101 for mounting a gas supply system, a power supply system, and a nozzle for injecting gas into the processing space S. An upper cross plate 152 may be disposed on the upper side of the spray head to cover the reaction chamber 100.

The inlet 110 is formed on a side wall of the reaction chamber 100 for transporting the substrate 1, and is opened and closed by an inlet door 111.

A transfer robot 540 is disposed outside the inlet 110 for transporting the substrate 1. Through the inlet 110, the transfer robot 540 transfers the substrate 1 to be processed by the semiconductor to the cassette unit 200, or the transfer robot 540 transmits the processed substrate 1.

An exhaust system is disposed in the reaction chamber 100 for discharging the gas, by-products, and the like remaining in the reaction chamber 100 after controlling the internal pressure of the reaction chamber 100 and performing semiconductor processing. The exhaust system is connected to a vacuum pump (not shown in Fig. 3) through an exhaust pipe 530, thereby maintaining the inside of the reaction chamber 100 under a vacuum atmosphere. The exhaust pipe 530 can be set differently according to installation conditions, etc., and can be directly connected to the process. The space forming unit, in turn, controls the internal pressure and gas discharge of the processing space S formed by the processing space forming unit.

In the present invention, since the exhaust pipe 530 connected to the vacuum pump is connected to the processing space forming unit, the internal pressure of the reaction chamber 100 can be maintained below the atmospheric pressure through the exhaust pipe 530. Further, when the semiconductor process is performed, the internal pressure of the processing space S formed by the processing space forming unit is maintained in a vacuum state through the exhaust pipe 530. Therefore, the semiconductor processing is performed in the processing space S.

The wafer supporting unit 120 supports the substrate 1 to perform semiconductor processing such as heating, deposition, and etching on the substrate 1, and the wafer supporting unit 120 can be changed to be a stage heater or an electrostatic chunk. , susceptor (susceptor) and so on.

The wafer supporting unit 120 is mounted so as to be vertically movable by the driving unit 121 disposed under the reaction chamber 100.

The wafer supporting unit 120 may be equipped with a plurality of lift pins 531 to support the substrate 1 transported by the transport unit 300, and when the wafer support unit 120 moves upward, the lift pins 531 are mounted to move the substrate 1 downward. To the support surface of the wafer support unit 120.

The processing space forming unit seals the space around the showerhead and the wafer supporting unit 120, thereby forming a separate space in the reaction chamber 100. That is, the structural processing space S is separated from the peripheral space, and semiconductor processing such as deposition and etching is performed in a space surrounding the wafer supporting unit 120 on which the substrate 1 is mounted. Processing space forming unit It can be executed in other different forms or can be modified.

For example, the processing space forming unit may be implemented as a cylinder valve 400, disposed in the reaction chamber 100, and thus vertically movable, and may form a processing space S together with the lower surface of the lower cross plate 151 when moving upward. Here, the sealing member 411 for sealing the processing space S is disposed on the upper surface of the processing space forming unit or on the lower surface of the lower horizontal plate 151.

The processing space forming unit may be configured to form a processing space S by contacting a protrusion (not shown) formed on the head or the reaction chamber 100 instead of the lower surface of the lower cross plate 151.

That is, the cylinder valve 400 may include a cylinder valve body 410 and a driving unit 430 as a processing space forming unit, wherein the cylinder valve body 410 is used to open and close the processing space S, and the driving unit 430 is used to vertically move the cylinder valve body 410 moves up and down.

Through the drive unit 430, the cylinder valve body 410 moves vertically up and down. When the cylinder valve body 410 moves upward, the space including the head and the wafer support unit 120 is closed, thereby forming a processing space S for semiconductor processing.

The cylinder valve body 410 can have a variety of different cross-sectional shapes, as well as a circular cross-sectional shape, a polygonal cross-sectional shape. The exhaust pipe 530 is coupled to the lower surface of the cylinder valve body 410.

Since the cylinder valve 400 of the present invention has a symmetrical structure, it is possible to achieve uniform processing conditions in the reaction chamber at the time of semiconductor processing. And, the crystal inside the reaction chamber The circular support units 120 are separated from each other, and thus do not cause inferior processing such as occurrence of a reaction gas, gas mixing, and plasma source interference.

The number of cylinder valves 400 can be constructed in a plurality, so that a plurality of processing spaces S can be formed. In each processing space S, different semiconductor processing can be performed. That is, the substrate 1 is subjected to an etching process in the first processing space S, and then transferred to the next processing space S via the cassette unit 200, thereby undergoing a deposition process. The semiconductor processing apparatus of the present invention can perform various semiconductor processing, such as etching processing and deposition processing, on the substrate 1 simultaneously and/or sequentially in a plurality of processing spaces S.

The semiconductor processing apparatus of the present invention may include a transfer unit 300 for transferring the substrate 1 between the wafer support unit 120 and the inlet 110, and a cassette unit 200 for loading the semiconductor Substrate 1 before and after processing.

The transfer unit 300 is disposed between the wafer support unit 120 and the inlet 110, and transports the substrate 1 to the wafer support unit 120 to be processed, or carries the processed substrate 1.

The transmission unit 300 can include one or more robots 320 for transporting the substrate 1 , wherein the robot 320 is connected at one end to a rotating shaft 311 of a rotary driving unit 310 , and the rotating driving unit 310 is disposed in the reaction chamber 100 , and the robot 320 The other end reciprocally rotates between the wafer support unit 120 and the inlet 110. As shown in "Fig. 4", the robot 320 has a mounting portion 321 to mount the substrate 1 at one end thereof. The mounting portion 321 can have different shapes, such as an S shape and a fork shape.

The transfer unit 300 can be constructed as a pair of robots 320 that rotate independently of each other. Here, the robot 320 is driven by a pair of rotary drive units 310, wherein the pair of rotary shafts 311 of the rotary drive unit 310 are concentric with each other.

The robots 320 can be set to different heights from each other, so that when the rotation prevents interference between the two.

As shown in FIG. 4 and FIG. 5, the cassette unit 200 is disposed between the transport unit 300 and the inlet 110 and includes a pair of side walls 210 and a lower cross plate 230, wherein the side wall 210 has a plurality of carrier plates. 211 is to carry a plurality of substrates 1 and the lower cross plate 230 is connected to the side walls 210.

The lower cross plate 230 is coupled to a drive unit 240 so that it can be moved up and down vertically.

The cassette unit 200 may be formed of a heat resistant material having excellent thermal conductivity, such as aluminum or an aluminum alloy.

The cassette unit 200 is formed of aluminum or an aluminum alloy, and the substrate 1 can be naturally cooled, so that an additional cooling device for cooling the substrate 1 is not required.

A temperature controller 250 may be further installed in the cassette unit 200 to control the temperature of the stacked substrate 1. The temperature controller 250 uses a gas or a refrigerant or the like for cooling or heating the stacked substrate 1 in the cassette unit 200.

When the cassette unit 200 is disposed between the transfer unit 300 and the inlet 110, the transfer unit 300 rotates between the wafer support unit 120 and the cassette unit 200, and transfers the substrate 1 to the wafer support unit 120 to be processed, or The processed substrate 1 is transferred to the cassette unit 200.

Each of the processing space forming units forms a separate processing space S for semiconductor processing, and each processing space S must be provided with optimum conditions for semiconductor processing.

FIG. 6 is a partial vertical cross-sectional view of a semiconductor processing apparatus according to a second embodiment of the present invention, and a partial cross-sectional view of the semiconductor processing apparatus of FIG.

The processing space forming unit may include at least one gas injection unit 710, a temperature controller 720, or a gasket 730, wherein the gas injection unit 710 is used to inject gas to the edge of the substrate 1, thereby preventing the substrate edge from being deposited. A temperature controller 720 is provided in the cylinder valve 400 for controlling the temperature of the cylinder valve 400 in accordance with semiconductor processing conditions. The gasket 730 serves to protect the O-ring as the sealing member 411, wherein the sealing member 411 is mounted in the cylinder valve 400.

The gas injection unit 710 can be implemented as a gas injection passage, which is disposed in the cylinder valve body 410 of the cylinder valve 400 to permeate the gas to the edge or the lower surface of the substrate 1, thereby preventing the substrate 1 from being deposited. Alternatively, as shown in "Fig. 6" and "Fig. 7", the gas injection unit 710 can also be implemented as a gas injection ring 711, wherein the gas injection ring 711 is located inside the cylinder valve body 410 and has a plurality of injection holes 711a, and It is connected to one of the air supply units 713 installed outside the reaction chamber through a gas supply pipe 712.

Preferably, the gas injection unit 710 is provided such that it can inject gas toward the side of the substrate 1, preferably by the side of the substrate 1 facing the side of the substrate 1. gas.

The temperature controller 720 is mounted on the cylinder valve 400 to optimize semiconductor processing such as deposition processing and to control the temperature of the cylinder valve body 410, thereby incorporating by-products into the inner wall of the cylinder valve body 410 during semiconductor processing, or The by-product is separated from the inner wall of the cylinder valve body 410.

The temperature controller 720 can have various configurations, such as a structure using a refrigerant, a conductor or a heater, etc., and can be mounted inside the cylinder valve body 410 or on an outer wall.

For example, the temperature controller 720 can include a channel 721, a channel tube 722, and a fluid supply unit 723. The passage 721 is formed inside the body wall of the cylinder valve body 410, and a fluid flows along the passage 721, and the passage tube 722 is connected to the passage 721. A fluid supply unit 723 installed outside the reaction chamber is for heating or cooling the fluid, and then supplies the heating or cooling fluid to the passage 721.

The plasma for semiconductor processing may cause damage to the sealing member 411 or may deteriorate the sealing state of the processing space S. Here, the sealing member 411 is disposed in a sealing member insertion groove 411a in which the sealing member insertion groove 411a is formed at the end of the cylinder valve main body 410.

A gasket 730 formed of a ceramic such as tantalum carbide (SiC) may be detachably mounted on the inner wall of the cylinder valve body 410 to protect the sealing member 411 by preventing the occurrence of plasma or by shielding heat.

When the gasket 730 is mounted on the cylinder valve body 410, it is preferable to provide the gasket 730. The outer surface is the same outer surface as the cylinder valve 400, thereby minimizing the effects on semiconductor processing.

Preferably, the lower end of the liner 730 extends below the lower surface of the substrate 1 to prevent the cylinder valve body 410 from affecting plasma generation.

One end of the cylinder valve 400 is preferably located between the processing space S and the outer surface of the cylinder valve 400, thereby protecting the sealing member 411. Also, the cylinder valve portion to which the sealing member 411 is mounted has a height different from that of the portion contacting the processing space S.

The operation of the semiconductor processing apparatus of the present invention will be explained as follows.

First, the inlet 110 is opened by the inlet door 111, so the transfer robot 540 disposed outside the reaction chamber 100 can be transferred to the inside of the reaction chamber 100.

Once the inlet 110 is opened, the transfer robot 540 carries the substrate 1 to be sequentially subjected to semiconductor processing on the carrier board 211 of the cassette unit 200. Here, the cassette unit 200 is vertically moved, and thus the respective substrates 1 can be loaded on the respective carrier plates 211. When the substrate 1 is completely loaded (stacked) into the cassette unit 200, the entrance door 111 closes the inlet 110.

Therefore, the reaction chamber 100 does not come into contact with the outside air, and passes through the exhaust pipe 530, and the reaction chamber 100 has an internal pressure lower than atmospheric pressure, and dust or impurities inside thereof are released outward.

Unlike the conventional semiconductor processing apparatus having a cartridge unit exposed to air, the cartridge unit 200 of the present invention is installed inside the reaction chamber 100 having less particles than air. Therefore, the present invention can prevent the base during semiconductor processing. The board is contaminated by dust or foreign matter.

Once the inlet 110 is closed by the inlet door 111, the transfer unit 300 is reciprocally rotated to transfer the substrate 1 loaded in the cassette unit 200 to the respective wafer support units 120. Here, the cassette unit 200 is vertically moved to be disposed at a desired position, and thus the substrate 1 can be smoothly transferred to the wafer supporting unit 120. Further, the cylinder valve 400 maintains the open state, that is, the lowered state of the cylinder valve body 410.

When the transfer unit 300 transfers the substrate 1 to the wafer support unit 120, the wafer support unit 120 and the cylinder valve body 410 move upward, thereby forming a processing space S for semiconductor processing. Then, the substrate 1 in the processing space S starts to undergo a semiconductor process such as an etching process or a deposition process. Through the exhaust pipe 530, a vacuum pump controls the pressure inside the processing space S to be suitable for semiconductor processing.

Once the semiconductor processing of the substrate 1 is completely completed, the semiconductor processing apparatus performs the above processing instead.

That is, if the semiconductor processing inside the processing space S of the processing space forming unit is completed, the air discharge and the pressure inside the processing space S are controlled by the exhaust pipe 530. Then, the cylinder valve body 410 is lowered to open the processing space S. The substrate 1 to be processed is loaded on the cassette unit 200 through the transfer unit 300.

The substrate 1 that has been loaded into the cassette unit 200 to the other wafer support unit 120 of the cylinder valve body 410 is transferred through the transfer unit 300, or the substrate 1 is transferred out of the reaction chamber 100 through the inlet gate 111 by the transfer robot 540.

In the present invention, a processing space forming unit such as a cylinder valve is mounted, and thus Prevents the appearance of gases during processing and prevents interference from the plasma source. Further, the present invention achieves a consistent processing atmosphere, thus enhancing processing reliability.

In addition, individual semiconductor processes can be performed simultaneously, and the composite process can be performed sequentially, thereby reducing overall processing time and increasing productivity.

Moreover, since the cassette unit is disposed in the reaction chamber, the substrate can be prevented from being contaminated by dust or foreign matter, thereby increasing the yield. Since the substrate is quickly transferred, and the cooling waiting time of the cassette unit formed of the heat resistant material is reduced, the overall processing time is reduced to further increase the productivity.

Furthermore, a gas injection unit, a temperature controller, a gasket, and the like are mounted on the processing space forming unit to form a processing space, thereby achieving optimal conditions for semiconductor processing, thereby achieving uniform processing of the atmosphere. Therefore, the reliability of semiconductor processing is enhanced.

While the invention has been described above in terms of the preferred embodiments thereof, it is not intended to limit the invention. The invention can be readily applied to other types of devices. Any person skilled in the art will be able to make some modifications and refinements without departing from the spirit and scope of the invention, and the scope of the invention is defined by the scope of the appended claims.

1‧‧‧Substrate

10‧‧‧Processing room

12‧‧‧ Wafer Support Unit

30‧‧‧Transfer robot

54‧‧‧ gate valve

60‧‧‧Transmission room

100‧‧‧Reaction room

101‧‧‧ lower chamber

102‧‧‧Top cover

110‧‧‧ entrance

111‧‧‧ entrance gate

120‧‧‧ Wafer Support Unit

121‧‧‧Drive unit

151‧‧‧ lower horizontal board

152‧‧‧Upper horizontal board

200‧‧‧Box unit

210‧‧‧ side wall

211‧‧‧ carrying board

230‧‧‧ lower horizontal board

240‧‧‧ drive unit

250‧‧‧temperature controller

300‧‧‧Transmission unit

310‧‧‧Rotary drive unit

311‧‧‧Rotary axis

320‧‧‧ Robot

321‧‧‧Installation Department

400‧‧‧Cylinder valve

410‧‧‧Cylinder valve body

411‧‧‧ sealing element

411a‧‧‧Sealing element insertion slot

430‧‧‧ drive unit

530‧‧‧Exhaust pipe

531‧‧‧lifting pin

540‧‧‧Transfer robot

S‧‧‧ processing space

710‧‧‧ gas injection unit

711‧‧‧ gas injection ring

711a‧‧Injection hole

712‧‧‧ gas supply pipe

713‧‧‧ gas supply unit

720‧‧‧temperature controller

721‧‧‧ channel

722‧‧‧channel tube

723‧‧‧Fluid supply unit

730‧‧‧ cushion

1 is a cross-sectional view of a semiconductor processing apparatus of the prior art; FIG. 2 is a vertical cross-sectional view taken along line AA of FIG. 1; FIG. 3 is a vertical cross-sectional view of the semiconductor processing apparatus of the present invention; and FIG. a cross-sectional view of a semiconductor processing apparatus; 5 is a perspective view of a semiconductor processing device of FIG. 3; FIG. 6 is a partial vertical sectional view of a semiconductor processing apparatus according to a second embodiment of the present invention; and FIG. 7 is a partial cross-sectional view of the semiconductor processing device of FIG. Cutaway view.

1‧‧‧Substrate

100‧‧‧Reaction room

101‧‧‧ lower chamber

102‧‧‧Top cover

110‧‧‧ entrance

111‧‧‧ entrance gate

120‧‧‧ Wafer Support Unit

121‧‧‧Drive unit

151‧‧‧ lower horizontal board

152‧‧‧Upper horizontal board

200‧‧‧Box unit

240‧‧‧ drive unit

300‧‧‧Transmission unit

310‧‧‧Rotary drive unit

311‧‧‧Rotary axis

400‧‧‧Cylinder valve

410‧‧‧Cylinder valve body

411‧‧‧ sealing element

430‧‧‧ drive unit

530‧‧‧Exhaust pipe

531‧‧‧lifting pin

540‧‧‧Transfer robot

S‧‧‧ processing space

Claims (10)

A semiconductor processing apparatus comprising: a reaction chamber having an inlet through which a substrate to be processed is transported; and a pair of nozzles disposed on an upper side of the reaction chamber for spraying a gas to perform semiconductor processing; a circular support unit corresponding to each of the nozzles disposed on a lower side of the reaction chamber for supporting the substrate; a pair of processing space forming units disposed in the reaction chamber for forming and sealing the nozzle and the wafer support a processing space for semiconductor processing of the unit; a pair of exhaust systems connected to the processing space forming unit for controlling pressure and air discharge inside the processing space formed by the reaction chamber and the processing space forming unit; a transmission unit is disposed between the pair of wafer supporting units and the inlet for transferring the substrate to be processed to the pair of wafer supporting units or transmitting the processed substrate through the inlet; wherein a box unit is further disposed Between the transmission unit and the inlet, for carrying a plurality of substrates; wherein the transmission unit includes a pair of robots For transmitting the substrate, one end of the pair of robots is connected to one of the rotating driving units disposed in the reaction chamber, and the other end of the pair of robots reciprocally rotates between the pair of wafer supporting units and the cassette unit, Set the robots to have different heights from each other to prevent rotation Mutual interference; and wherein the pressure and air emissions inside the reaction chamber are controlled by the pair of exhaust systems respectively connected to the pair of processing space forming units. The device of claim 1, wherein the cartridge unit is vertically movable through a driving unit. The device of claim 1, wherein the cartridge unit includes a temperature controller to control the temperature of the substrate being carried. The apparatus of any one of claims 1 to 3, wherein the processing space forming unit is implemented as a cylinder valve disposed in the reaction chamber, and is vertically movable, and formed when moving upward A processing space. The apparatus of claim 4, wherein a gas injection unit is further provided in the cylinder valve for injecting gas to the edge of the substrate to prevent the substrate from being deposited. The device of claim 5, wherein the gas injection unit comprises a gas injection ring, the gas injection ring is located inside the cylinder valve and has a plurality of injection holes, and the gas injection ring is connected to the installation through a gas supply pipe. One of the external air supply units. The apparatus of claim 4, wherein the cylinder valve is further provided with a temperature controller to control the temperature of the cylinder valve in accordance with semiconductor processing conditions. The device of claim 4, wherein the inner wall of the cylinder valve is further provided with a gasket to protect a sealing member. The device of claim 8, wherein the lower end of the liner extends below a lower surface of the substrate to prevent plasma from being generated. The device of claim 8, wherein one end of the cylinder valve is located between the processing space and an outer surface of the cylinder to protect the sealing member, and the height of the cylinder valve portion of the sealing member is mounted It is different from the height of the portion of the empty door that contacts the process.