KR100902330B1 - Apparatus for Semiconductor Process - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing apparatus, and more particularly, to a semiconductor processing apparatus for performing a semiconductor process such as etching or depositing a surface of a substrate such as a wafer.

The present invention relates to a reaction vessel having a gate through which a substrate to be subjected to a semiconductor process is formed, a reaction container having one or more shower heads installed on an upper side of the reaction vessel to inject a gas so as to perform a semiconductor process, and corresponding to each of the shower heads. At least one wafer support part installed inside the reaction vessel and supporting the substrate, and a space formed in the reaction container to seal a space including the shower head and the wafer support part to form a processing space for a semiconductor process. A space forming unit, and inside the reaction vessel; Disclosed is a semiconductor processing apparatus including an exhaust system connected to the processing space forming unit for pressure control and exhaust in the processing space formed by the processing space forming unit.

Semiconductor, Semiconductor Process, Cylinder Valve

Description

Semiconductor Process Equipment {Apparatus for Semiconductor Process}

1 is a horizontal cross-sectional view showing a conventional semiconductor processing apparatus.

2 is a vertical cross-sectional view showing a cross-sectional view of the A-A direction in FIG.

3 is a vertical sectional view showing a semiconductor processing apparatus according to the present invention.

4 is a horizontal cross-sectional view of the semiconductor processing apparatus of FIG. 3.

5 is a perspective view illustrating a cassette installed in the semiconductor processing apparatus of FIG. 3.

6 is a vertical cross-sectional view showing a part of a semiconductor processing apparatus according to a second embodiment of the present invention.

7 is a partial cross-sectional view illustrating a portion of a horizontal cross section of the semiconductor processing apparatus of FIG. 6.

***** Explanation of symbols for main parts of drawing *****

100: reaction vessel 110: gate

120: wafer support portion 200: cassette portion

300: transfer unit 400: cylinder valve (process space forming unit)

710: gas injection device 720: temperature control unit

730: liner

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing apparatus, and more particularly, to a semiconductor processing apparatus for performing a semiconductor process such as etching or depositing a surface of a substrate such as a wafer.

Korean Patent Registration No. 10-0364089 discloses a semiconductor processing apparatus provided with a pair of wafer supports.

1 is a horizontal cross-sectional view showing a conventional semiconductor processing apparatus, Figure 2 is a vertical cross-sectional view showing a cross-sectional view of the A-A direction in FIG.

The conventional semiconductor processing apparatus disclosed in Korean Patent Registration No. 10-0364089 includes a process chamber 10 in which a pair of wafer supports 12 are installed, and a pair of transfer robots 30 as shown in FIGS. 1 and 2. ) Is configured to include a transfer chamber 60 is installed.

As shown in FIGS. 1 and 2, a pair of wafer supports 12 are installed in the process chamber 10, and the process chamber 10 is a substrate 1 by a transfer robot 30. After being seated on the wafer support 12, it is sealed by the gate valve 54 provided between the process chamber 10 and the transfer chamber 60. In addition, the process chamber 10 performs a predetermined semiconductor process such as deposition, etching, and annealing in a sealed state.

However, the conventional semiconductor processing apparatus having the above-described configuration, in particular, the conventional semiconductor processing apparatus provided with a plurality of wafer supports, such as the semiconductor processing apparatus disclosed in Korean Patent No. 10-0364089, has the following problems.

First, in the conventional semiconductor processing apparatus, when a plurality of wafer support units are installed, a processing space for performing a semiconductor process is asymmetrically formed around a substrate, thereby making it impossible to form uniform process conditions inside a chamber during a semiconductor process.

In addition, the conventional semiconductor processing apparatus is not isolated between the wafer support in the process chamber, causing the semiconductor process defects such as the reaction gas, the mixing of the raw material gas, interference of the plasma generation source during the semiconductor process, the reliability of the semiconductor process may be lowered. Will be.

In addition, the conventional semiconductor processing apparatus has a problem in that the waiting time for cooling after the semiconductor process of the substrate is increased to increase the overall processing time of the semiconductor process, thereby lowering the productivity.

In addition, as the overall process time of the semiconductor process becomes longer, the substrate may be exposed to the air for a long time, contaminated with dust, foreign matters, etc., thereby lowering the yield.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor processing apparatus capable of increasing the reliability of a process by making the process atmosphere uniform by having a structure in which a processing space for a semiconductor process is symmetric about a substrate in order to solve the above problems. have.

Another object of the present invention is to provide a semiconductor processing apparatus capable of improving process reliability by mutually isolating processing spaces formed in each wafer support when a plurality of wafer supports are installed.

Still another object of the present invention is to further reduce the standby time for cooling the substrate after performing the semiconductor process by further providing a cassette unit to shorten the overall process time, to prevent exposure of the substrate in the air for a long time dust, foreign matter It is to provide a semiconductor processing apparatus that can minimize the contamination by such.

It is still another object of the present invention to provide a semiconductor processing apparatus capable of forming optimum conditions for performing a semiconductor process in each processing space.

The present invention was created in order to achieve the object of the present invention as described above, the present invention is a reaction vessel in which a gate for entering and exiting the substrate to be subjected to the semiconductor process is formed, and is installed on the upper side of the reaction vessel to perform a semiconductor process At least one shower head for injecting gas, at least one wafer support part corresponding to each of the shower heads and installed inside the reaction container and supporting the substrate, and installed in the reaction container; A processing space forming unit for sealing a space including a wafer support unit to form a processing space for a semiconductor process, and forming the processing space for pressure control and exhaust in the processing space formed inside the reaction vessel and the processing space forming unit; A semiconductor processing apparatus comprising an exhaust system connected to a portion Try.

Between the wafer support and the gate may further include a transfer unit for transferring the substrate to be subjected to the semiconductor process from the gate to the wafer support or to carry out the substrate subjected to the semiconductor process to the outside through the gate. One end of the transfer part may be connected to a rotation driving part installed in the reaction vessel, and the other end may include one or more robot arms supporting the substrate while reciprocating between the wafer support part and the gate. Each of the robot arms may be installed at different heights so that rotations do not interfere with each other.

A cassette part may be additionally installed between the transfer part and the gate to stack a plurality of substrates. The cassette unit may be installed to move up and down by a driving unit. The cassette unit may be configured to include a temperature control unit for temperature control of the stacked substrate.

The processing space forming unit may be configured as a cylinder valve to form the processing space when installed and raised to enable the up and down reciprocating motion in the reaction vessel. And the cylinder valve may be configured to be connected to the exhaust pipe for connecting with the exhaust system.

The cylinder valve may be further provided with a gas injection device for injecting gas to the edge portion of the substrate to prevent deposition of the edge portion of the substrate.

The gas injection device may be configured to include a plurality of injection holes are formed inside the cylinder valve and a gas injection ring connected by a gas supply device and a gas supply pipe installed outside.

The cylinder valve may be further provided with a temperature control unit for controlling the temperature of the cylinder valve in accordance with the semiconductor process conditions.

Meanwhile, a liner for protecting the sealing member may be additionally installed on the inner wall of the cylinder valve. At this time, the lower end of the liner may be formed to extend below the bottom of the substrate in order to prevent the cylinder valve from affecting the plasma formation, the end of the cylinder valve is stepped between the processing space and the outer surface of the cylinder valve Is formed and the portion in which the sealing member is installed may be configured to differ in height from the portion in contact with the processing space.

Hereinafter, a semiconductor processing apparatus according to the present invention will be described in detail with reference to embodiments and the accompanying drawings.

In the semiconductor processing apparatus according to the present invention, as shown in FIGS. 3 to 5, the reaction vessel 100 having the gate 110 through which the substrate 1 on which the semiconductor process is to be performed is formed, At least one wafer support part 120 installed inside the lower part to support the substrate 1, and the upper and lower reciprocations are installed in the reaction vessel 100 to seal the space including the respective wafer support parts 120 to seal the semiconductor process. It is configured to include a processing space forming unit for forming a processing space (S) for, and an exhaust system connected to the processing space forming unit for exhausting the gas of the processing space to the outside.

The reaction vessel 100 may be composed of an assembly consisting of a lower chamber 101 and an upper cover 102 coupled with the lower chamber 101. In addition, the lower chamber 101 is formed with a portion of the upper side open, and in the open portion of the lower chamber 101 into a gas supply system, a power applying device, and a processing space S to perform a semiconductor process. The lower plate 151 may be installed to install a shower head for spraying gas, and an upper plate 152 may be installed on the shower head to seal the reaction container 100.

In addition, the gate 110 is formed on the sidewall of the reaction vessel 100 to enter and exit the substrate 1, and is opened and closed by the gate door 111.

Meanwhile, a transfer robot 540 or the like for transferring the substrate 1 is installed outside the gate 110, and the transfer robot 540 will be described later with respect to the substrate 1 for a semiconductor process through the gate 110. The substrate 1 which is transferred to the cassette unit 200 or completed the semiconductor process is carried out.

The reaction vessel 100 is provided with an exhaust system for exhausting the gas or by-products and the like remaining in the reaction vessel 100 after the pressure control and the process inside. The exhaust system is connected to a vacuum pump (not shown) through the exhaust pipe 530 to make the inside of the reaction vessel 100 into a vacuum atmosphere. The exhaust pipe 530 may be installed in various ways according to design conditions. In a preferred embodiment of the present invention, the exhaust pipe 530 is configured to be directly connected to the processing space forming unit for pressure control and exhaust in the processing space (S) formed by the processing space forming unit.

According to this configuration, in the semiconductor processing apparatus according to the present invention, the exhaust pipe 530 connected to the vacuum pump is connected to the processing space forming unit, and the pressure inside the reaction vessel 100 is lower than atmospheric pressure through the exhaust pipe 530. Will remain in the state. In addition, in the case of performing the semiconductor process, by maintaining the pressure of the processing space (S) formed by the processing space forming unit through the exhaust pipe 530 in a vacuum of a level capable of the semiconductor process, the semiconductor in the processing space (S) The process is performed.

The wafer supporter 120 supports the substrate 1 to perform a semiconductor process on the substrate 1 such as heating, deposition, and etching, and various configurations such as a stage heater, an electrostatic chuck, and a susceptor can be performed. .

The wafer support unit 120 is installed to be movable by the driving unit 121 installed below the reaction vessel 100.

The wafer support part 120 supports the substrate 1 transferred by the transfer part 300, but relatively lowers as the wafer support part 120 rises, thereby lowering the substrate 1 on the support surface of the wafer support part 120. A plurality of lift pins 531 to seat the may be installed.

Meanwhile, the processing space forming unit, which is a feature of the present invention, seals the space surrounding the showerhead and the wafer support unit 120 to form an independent processing space in the reaction container 100, that is, the wafer support unit on which the substrate 1 is seated. The space surrounding the 120 is configured to be isolated from the surroundings in order to create an environment for a semiconductor process such as deposition and etching, and various modifications and implementations are possible by those skilled in the art. Do.

For example, in the preferred embodiment of the present invention, the processing space forming unit is installed in the reaction vessel 100 to enable the up and down reciprocating movement when raised to the processing space (S) with the bottom of the lower plate 151 It may be configured as a cylinder valve 400 to form. At this time, the sealing member 411 for sealing the processing space (S) is provided on the upper surface or the bottom surface of the lower plate 151 of the processing space forming unit.

Meanwhile, the processing space forming unit may be configured to form a closed processing space S in contact with a protrusion (not shown) formed in the shower head or the reaction vessel 100 in addition to the bottom of the lower plate 151.

That is, in the embodiment of the present invention, the cylinder valve 400, which is a processing space forming unit, includes a cylinder valve body 410 for sealing or opening the processing space S, and a driving unit 430 for vertically reciprocating the cylinder valve body 410. It may be configured to include.

The cylinder valve body 410 is reciprocated up and down by the driving of the drive unit 430, and the space containing the shower head and the wafer support unit 120 by the movement of the cylinder valve body 410 to seal the semiconductor process It forms a processing space (S) for. The cylinder valve body 410 may have various shapes such as a polygonal shape in addition to a circular cross-sectional shape, and an exhaust pipe 530 is connected to a bottom surface of the cylinder valve body 410.

In addition, the cylinder valve 400 forms a symmetrical structure to form uniform process conditions inside the chamber during semiconductor processing, and isolates each wafer support unit 120 in the semiconductor processing apparatus, thereby mixing gas during semiconductor processing. It is possible to prevent the interference of the plasma generation source and the like.

In addition, the cylinder valve 400 may be configured in plural to form a plurality of processing spaces S, and may perform different semiconductor processes in the respective processing spaces S. FIG. That is, the substrate 1 is subjected to an etching process in the first processing space (S), and then transferred to the next processing space (S) through the cassette unit 200 and then subjected to a deposition process, such as a continuous process You can do it. In addition, the semiconductor processes such as etching and deposition may be simultaneously performed in the plurality of processing spaces S.

Meanwhile, the semiconductor processing apparatus according to the present invention includes a transfer part 300 for transferring the substrate 1 between the wafer support part 120 and the gate 110, and a cassette part for stacking the substrate 1 before or after the semiconductor process. 200 may be installed.

The transfer part 300 is installed between the wafer support part 120 and the gate 110 to transfer the substrate 1 to be subjected to the semiconductor process to the wafer support part 120 or to transfer the substrate 1 to which the semiconductor process is performed to the outside. Export.

The transfer part 300 performing this function is connected to the rotation shaft 311 of the rotary drive part 310 installed in the reaction vessel 100, and the other end is reciprocally rotated between the wafer support part 120 and the gate 110. It may be configured to include one or more robot arm 320 to transfer the substrate (1). That is, as shown in FIG. 4, the robot arm 320 has a seating portion 321 for seating the substrate 1 at an end thereof, and the seating portion 321 has a fork shape and an 'S' shape. It may have a variety of shapes.

In addition, the transfer unit 300 configured as described above may be configured with a pair of robot arms 320 that rotate independently of each other, wherein each robot arm 320 has a respective concentric axis of rotation 311. It is driven by a pair of rotary drive unit 310. In this case, each of the robot arms 320 is preferably installed at different heights so that the rotation does not interfere with each other.

Meanwhile, as shown in FIGS. 4 and 5, the cassette unit 200 is installed between the transfer unit 300 and the gate 110 and includes a plurality of laminated plates 211 so that a plurality of substrates 1 may be inserted and stacked. ) May be composed of a pair of side wall portion 210 is installed, and a lower plate portion 230 connecting the side wall portions 210. The lower plate 230 is connected to the driving unit 240 so as to perform the up and down reciprocating motion.

The cassette unit 200 configured as described above may be a member having excellent heat conductivity such as aluminum and a heat resistant member. When the cassette unit 200 is made of aluminum, the substrate 1 may be naturally cooled, so that a separate cooling device for cooling the substrate 1 is unnecessary.

In addition, the cassette unit 200 may further include a temperature control unit 250 for controlling the temperature of the substrate 1 to be stacked. The temperature control unit 250 is configured to cool or heat the substrate 1 loaded on the cassette unit 200, and various methods such as cooling or heating by gas, cooling or heating by a refrigerant, and the like may be used.

Meanwhile, when the cassette unit 200 is installed between the transfer unit 300 and the gate 110 as described above, the transfer unit 300 reciprocates between the wafer support unit 120 and the cassette unit 200. The substrate to be subjected to the semiconductor process is transferred to the wafer support unit 120, or the substrate 1 on which the semiconductor process is completed is transferred to the cassette unit 200.

Meanwhile, each of the processing space forming units forms an independent processing space S for performing a semiconductor process, and each processing space S needs to form an optimal condition for performing the semiconductor process.

6 is a vertical cross-sectional view showing a semiconductor processing apparatus according to a second embodiment of the present invention, and FIG. 7 is a partial cross-sectional view showing a part of a horizontal cross section of the semiconductor processing apparatus of FIG. 6.

Accordingly, the processing space forming unit may include a gas injection device 710 for injecting gas into the edge portion of the substrate 1 to prevent deposition of an edge portion of the substrate 1, and a cylinder valve forming the processing space forming unit ( To protect the O-ring (400) is installed in the temperature control unit 720 and the sealing member 411 installed in the cylinder valve 400 to control the temperature of the cylinder valve 400 according to the semiconductor process conditions At least one of the liner 730 may be installed.

The gas injection device 710 is installed in the cylinder valve 400 to prevent deposition by injecting gas toward the edge or the bottom of the substrate 1, the inside of the cylinder valve body 410 of the cylinder valve 400 6 and 7, a plurality of injection holes 711a are formed inside the cylinder valve body 410, and the gas supply device 713 and the gas supply pipe ( It may be composed of a gas injection ring 711 connected by 712.

At this time, the gas injection device 710 is installed to inject the gas to the side of the substrate 1, more preferably from the bottom side of the substrate 1 side.

The temperature control unit 720 is installed in the cylinder valve 400 to optimize the semiconductor process, for example, the deposition process, or the inner wall of the cylinder valve 400 and the cylinder valve body 410 during initialization or process for the semiconductor process. The temperature of the cylinder valve body 410 is controlled to attach or separate by-products.

The temperature control unit 720 may have various configurations such as a structure using a refrigerant such as a fluid, a structure using a thermoelectric element, a structure using a heater, and the like. The temperature control unit 720 may be installed inside the cylinder valve body 410 or may be installed on an outer wall. have.

For example, the temperature control unit 720 is formed on the inner wall of the cylinder valve body 410, the fluid flow path 721 and is installed outside to heat or cool the fluid flow path through the flow path tube 722 And a fluid supply pipe 723 for supplying a heated or cooled fluid to the 721.

On the other hand, the plasma for performing a semiconductor process such as deposition may affect the sealing member 411 to damage the sealing member 411 or may not be properly sealed in the processing space S. At this time, the sealing member 411 is installed in the sealing member insertion groove (411a) formed at the end of the cylinder valve body 410.

Accordingly, a liner 730 made of ceramic such as SiC may be integrally or detachably installed on the inner wall of the cylinder valve body 410 to protect the sealing member 411 such as to block the transfer and heat of the plasma. . In this case, when the liner 730 is installed in the cylinder valve body 410, it is preferable that the outer surface of the liner 730 forms the same surface as the surface of the cylinder valve 400 in order to minimize the influence on the semiconductor process.

In addition, the lower end of the liner 730 is preferably formed to extend below the bottom of the substrate 1 in order to prevent the cylinder valve body 410 from affecting the plasma formation.

In addition, in order to protect the sealing member 411, the end of the cylinder valve 400 is formed with a step between the processing space (S) and the outer surface and the portion where the sealing member 411 is installed in contact with the processing space (S) and Can vary in height

Referring to the operation of the semiconductor processing apparatus according to the present invention having the configuration as described above in detail as follows.

First, the gate 110 is opened by the operation of the gate door 111 so that the transfer robot 540 installed on the outside of the reaction vessel 100 can enter and exit the inside of the reaction vessel 100.

When the gate 110 is opened, the transfer robot 540 stacks the substrates 1 on which the semiconductor process is to be sequentially performed on the stack 211 of the cassette unit 200. At this time, the cassette unit 200 is moved up and down so that the substrate 1 is stacked on each laminate plate 211. When the lamination of the substrate 1 to the cassette unit 200 is completed, the gate door 111 operates to close the gate 110.

Accordingly, the reaction vessel 100 is blocked from external air, and the pressure inside the reaction vessel 100 is maintained at a lower state than atmospheric pressure through the exhaust pipe 530 connected to the processing space forming unit by the driving of the vacuum pump. , Dust or foreign matter present in the reaction vessel 100 is exhausted to the outside.

Therefore, unlike the semiconductor processing apparatus in which the conventional cassette unit 200 is exposed to the atmosphere, the cassette 200 is installed inside the reaction vessel 100 having a relatively smaller number of particles than the atmosphere. It will reduce contamination.

Meanwhile, when the gate 110 is closed by the gate door 111, the transfer unit 300 starts to transfer the substrate 1 stacked on the cassette unit 200 by reciprocating rotation to each wafer support unit 120. do. At this time, the cassette 200 is positioned at the height indicated by the vertical movement so that the substrate 1 can be smoothly transferred to the wafer support 120, and the cylinder valve 400 is in an open state, that is, the cylinder valve body ( 410 is to maintain the lowered state.

When the substrate 1 finishes the transfer of the substrate 1 to the wafer support unit 120 by the transfer unit 300, the wafer support unit 120 and the cylinder valve body 410 rise upwards to perform a semiconductor process. (S) is formed, and a predetermined semiconductor process such as etching or deposition is performed on the substrate 1 in the processing space S. Of course, the vacuum pump is to adjust the pressure in the processing space (S) so that the pressure in the processing space (S) through the exhaust pipe 530 is suitable for performing the semiconductor process.

Meanwhile, when the substrate 1 finishes a predetermined semiconductor process, the above process is reversed in the semiconductor processing apparatus according to the present invention.

That is, when the semiconductor process is completed in the processing space S of the processing space forming unit, exhaust and pressure control are performed by the exhaust pipe 530, and the cylinder valve body 410 is lowered to open the processing space S. After the semiconductor process is completed by the transfer part 300, the substrate 1 is stacked on the cassette part 200.

In addition, the substrate 1 stacked on the cassette unit 200 is transferred to the transfer unit 300 to the wafer support unit 120 toward the other cylinder valve body 410, or gated by the robot arm 540 to perform a subsequent process. It is carried out to the outside of the reaction vessel 100 through the door 111.

Although the preferred embodiments of the present invention have been described above by way of example, the scope of the present invention is not limited to these specific embodiments, and may be appropriately changed within the scope described in the claims.

The semiconductor processing apparatus of the present invention has an effect of eliminating interference between process gas and plasma generating source by installing a processing space forming unit such as a cylinder valve, and forming a uniform process atmosphere to improve process reliability.

In addition, different semiconductor processes may be simultaneously performed, and complex processes may be continuously performed, thereby reducing the process time and improving productivity.

In addition, the cassette portion is located in the reaction vessel to improve the yield by reducing the contamination of the wafer by dust and foreign matter, and to reduce the processing time by reducing the process waiting time by reducing the rapid wafer transfer and the use of the cassette portion of the heat-resistant member Has the effect of improving.

In addition, in the semiconductor processing apparatus of the present invention, a gas injection device, a temperature control device, and a liner are installed in the processing space forming part forming the processing space to form an optimal condition for performing the semiconductor process in each processing space, thereby providing a uniform process atmosphere. It is effective to improve the reliability of the process by forming a.

Claims (14)

A reaction vessel in which a gate through which the substrate to be subjected to the semiconductor process is performed is formed; A plurality of shower heads installed on an upper side of the reaction vessel and spraying gas to perform a semiconductor process; A plurality of wafer support portions corresponding to each of the shower heads and installed in the lower side of the reaction vessel and supporting the substrate; A plurality of processing space forming units installed in the reaction container to seal a space including the shower head and the wafer support unit to form a processing space for a semiconductor process; And a plurality of exhaust systems connected to the processing space forming unit for pressure control and exhaust in the processing space formed in the reaction vessel and the processing space forming unit. The method of claim 1, And a transfer part between the wafer support part and the gate to transfer a substrate to be subjected to a semiconductor process from the gate to the wafer support part or to carry out a substrate on which the semiconductor process is performed to the outside through the gate. Processing equipment. The method of claim 2, The transfer unit At least one robot arm, one end of which is connected to a rotation driving unit installed in the reaction vessel, and the other end of which transfers the substrate while reciprocating between the wafer support and the gate. The method of claim 3, wherein Each robot arm is installed at a different height so that the rotation does not interfere with each other. The method of claim 2, And a cassette unit in which a plurality of substrates are stacked between the transfer unit and the gate. The method of claim 5, wherein And the cassette unit is installed to be able to move up and down by a driving unit. The method of claim 5, wherein The cassette unit comprises a temperature control unit for controlling the temperature of the stacked substrate. The method according to any one of claims 1 to 7, And the processing space forming unit is a cylinder valve that forms the processing space when the processing space forming unit is installed to enable the up and down reciprocating movement in the reaction vessel. The method of claim 8, And a gas injection device for injecting gas into the edge portion of the substrate so as to prevent deposition of the edge portion of the substrate. The method of claim 9, The gas injection device is a semiconductor processing apparatus, characterized in that a plurality of injection holes are formed inside the cylinder valve and comprises a gas injection ring connected to a gas supply device and a gas supply pipe installed outside. The method of claim 8, And a temperature control unit for controlling the temperature of the cylinder valve in accordance with semiconductor process conditions. The method of claim 8, And a liner for protecting the sealing member on an inner wall of the cylinder valve. The method of claim 12, And the liner has a lower end portion formed to extend below the bottom of the substrate to prevent the cylinder valve from affecting plasma formation. The method of claim 12, The end of the cylinder valve is a semiconductor processing apparatus, characterized in that a step is formed between the processing space and the outer surface of the cylinder valve and the portion in which the sealing member is installed is different from the portion in contact with the processing space.

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