CN103276373A - PECVD device - Google Patents
PECVD device Download PDFInfo
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- CN103276373A CN103276373A CN2013102037716A CN201310203771A CN103276373A CN 103276373 A CN103276373 A CN 103276373A CN 2013102037716 A CN2013102037716 A CN 2013102037716A CN 201310203771 A CN201310203771 A CN 201310203771A CN 103276373 A CN103276373 A CN 103276373A
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Abstract
The invention discloses a PECVD device, which comprises a process cavity, a bearing frame, a cooling soaking plate and at least one reaction chamber, wherein the bearing frame, the cooling soaking plate and the at least one reaction chamber are all arranged in the process cavity; the multiple soaking devices are arranged in a layered manner along the vertical direction and are mounted on the bearing frame; the reaction chambers are horizontally arranged between two adjacent soaking chambers, and the soaking chambers are arranged on the upper side and the lower side of each reaction chamber. Soaking is arranged on the upper side and the lower side of each reaction chamber, and through the cooling soaking and isolating action of soaking, the heat radiation interference among the reaction chambers is eliminated, and the temperature consistency of the reaction chambers is ensured; meanwhile, the cooling heating plate has a cooling effect, the temperature of the process cavity is prevented from being too high, the sealing structure of the process cavity is protected, the temperature of the process cavity is prevented from being too low, and the waste of heating energy is avoided.
Description
Technical field
The present invention relates to the vacuum plating field, relate in particular to a kind of PECVD device.
Background technology
(Plasma Enhanced Chemical Vapor Deposition, PECVD) technology is to utilize plasma discharge to produce materials such as charged particle, free radical, active group in the technology of substrate surface generation chemical reaction deposit film in plasma activated chemical vapour deposition.Because plasma exciatiaon the activity of reactant gas molecules, make the temperature step-down of deposit film technology, and sedimentation rate is fast, institute's growing film compactness is good, defective is few, good process repeatability and being widely used.Be applied to the earliest in the semi-conductor chip processing industry, be used for cvd silicon oxide, silicon nitride film; Liquid crystal flat-panel technique of display and photovoltaic industry is flourish in recent years, and the PECVD technology is used to prepare thin film transistor, and (Thin-Film Transistor TFT) particularly prepares non-crystalline silicon, microcrystalline silicon film.The large-area process that is used for TFT, photovoltaic hull cell by the small size in the semi-conductor has till now been experienced in the development of the core equipment-PECVD equipment in these fields, and the electron cyclotron resonace discharge, inductively-coupled discharge that its plasma discharge mode has also experienced high frequency microwave be the process of flat very high frequency(VHF) condenser coupling discharge till now.The PECVD equipment of existing main flow adopts the structure formation that a plurality of process reaction chambers are set usually in same vacuum chamber.
PECVD equipment has following problem in the existing mainstream technology: when 1) preparing film for large-area substrates, gas enters from a side of reaction chamber, extract out from opposite side, thereby the homogeneity of air-flow is very poor; 2) reaction chamber can adopt independent heating, but arranges because of a plurality of reaction chamber storehouses, will certainly cause the technological reaction chambers temp at top to be higher than the reaction chamber temperature of bottom, thereby it is relatively poor to produce the mutual temperature consistence of each reaction chamber; 3) reaction chamber is separately fixed at the inwall of vacuum chamber, and the gap is very little each other, causes later maintenance complexity, time-consuming, difficult; 4) a plurality of reaction chambers are arranged in the same vacuum chamber, cause whole device very heavy, weigh for a long time several tons, and it is very inconvenient that this makes that later maintenance, maintenance personnel operate, and have potential safety hazard.Along with the continuous increase of substrate area, uniformity of film, electrical property to be had higher requirement, this just needs a nearly step to improve temperature consistence and the airflow homogeneity of reaction chamber.In radio frequency parallel plate type reaction chamber, temperature consistence and the airflow homogeneity of many factor affecting process reaction chambers.How to pass through to optimize the relevant design of process reaction chamber, obtain to have higher temperature consistence and the inhomogeneity PECVD modular unit of air-flow, have important practical significance and using value.
Summary of the invention
Technical problem to be solved by this invention is, a kind of PECVD device is provided, and can improve the temperature consistence of each reaction chamber.
Embodiments of the invention provide a kind of PECVD device, comprise process cavity, and all are arranged on carrier, cooling soaking plate and at least one reaction chamber in the described process cavity; Described cooling soaking plate is a plurality of, along vertically arranging and be mounted to described carrier to being laminar; Described reaction chamber is horizontally set between adjacent two described cooling cooling soaking plate, and the both sides up and down of each described reaction chamber are provided with described cooling soaking plate.
Wherein, described carrier comprise strut member and with described cooling soaking plate a plurality of fixed frames one to one, a plurality of described fixed frames are along vertically arranging and be installed on described strut member to being laminar, each described cooling soaking plate is installed on respectively in each described fixed frame.
Wherein, described cooling soaking plate comprises Thiele tube, go up soaking panel and soaking panel down, described Thiele tube on described the soaking panel with described down between the soaking panel; Described PECVD device also comprises the liquid cooling switching equipment, and the two ends of the Thiele tube of each described cooling soaking plate all are connected to the liquid cooling switching equipment.
Wherein, the number of soaking panel was identical under the last soaking panel that each described cooling soaking plate comprises reached, and was two or more; Each described upward soaking panel and each described soaking panel down are oppositely arranged one by one and form son cooling soaking plate; The Thiele tube number that described cooling soaking plate comprises is one; Be installed with king-rod in the described fixed frame, described king-rod is between adjacent two son cooling soaking plate.
Wherein, described carrier also comprises adjustable web member, and described adjustable web member is connected between described strut member and the described fixed frame, is used for adjusting described fixed frame in vertical position.
Wherein, described reaction chamber comprises top electrode portion and the lower electrode portion that cooperatively interacts, and is formed for the processing chamber of technological reaction between described top electrode portion and the described lower electrode portion; The upper face center position of described top electrode portion offers the inlet mouth that is communicated to described processing chamber, offer the air outlet on the described reaction chamber, described air outlet is two or more, evenly is arranged in the circumferential junction between described top electrode portion and the described lower electrode portion.
Wherein, described reaction chamber horizontal slip is placed between adjacent two described cooling soaking plate.
Wherein, the upper surface of described fixed frame is provided with the roller that cooperates for described reaction chamber; The lower surface of described fixed frame is provided with the straight line hanger rail, and the upper surface of described reaction chamber is provided with the micro-wheels that matches with described straight line hanger rail.
Wherein, described carrier slides and is positioned in the described process cavity.
Wherein, described PECVD also comprises vacuum system, remote hydrogen plasma clean system, reaches air-channel system; Each described reaction chamber shares described vacuum system, described remote hydrogen plasma clean system, and described air-channel system; Described remote hydrogen plasma clean system and described vacuum system all are communicated to each described reaction chamber by described air-channel system.
The PECVD device that the embodiment of the invention provides, the both sides up and down of each reaction chamber are provided with the cooling soaking plate, and by cooling soaking and the buffer action of cooling soaking plate, the heat radiation of eliminating between each reaction chamber disturbs, and guarantees the consistence of each reaction chamber temperature; Cool off hot-plate simultaneously and have the effect of cooling, avoid the process cavity temperature too high, the sealed structure of protection process cavity makes the temperature of process cavity unlikely low excessively again, the energy of the heating that avoids waste.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the PECVD schematic representation of apparatus that the preferred embodiment of the present invention provides;
Fig. 2 is the structural representation of carrier and cooling soaking plate in the PECVD device of Fig. 1;
Fig. 3 is carrier and the vertical view that cools off soaking plate among Fig. 2;
Fig. 4 is the structural representation of the reaction chamber that provides of the preferred embodiment of the present invention;
Fig. 5 is the synoptic diagram that RPS cleaning system and air-channel system cooperate with reaction chamber in the PECVD device that provides of the preferred embodiment of the present invention;
Fig. 6 is the synoptic diagram of position relation between the RPS cleaning system that provides of the preferred embodiment of the present invention and process cavity.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described.
Referring to Fig. 1, a kind of PECVD device for preferred embodiment among the present invention provides comprises process cavity 100, and all is arranged on the carrier 1 in the process cavity 100, five cooling soaking plate 2(as shown in Figure 2) and four reaction chambers 3.
In the present embodiment, the process cavity 100 integral body side of being bodies, its internal surface is equipped with the stainless steel mirror reflective insulation board, can prevent effectively that heat from distributing to external environment by the form of radiation, further save energy.
As shown in Figure 1 and Figure 2, carrier 1 slides and is positioned in the process cavity 100.The bottom of carrier 1 is equipped with pulley 14, and in the present embodiment, carrier 1 comprises four supporting tubes 11 and five fixed frames 12; The axially parallel of supporting tube 11 in vertically to.Fixed frame 12 is also along vertically arranging and be installed on supporting tube 11 to being laminar.Pulley 14 is four, be installed in the bottom of four supporting tubes 11 respectively, make carrier 1 to be free to slide at the interior diapire of process cavity 100, in maintenance process, can from process cavity 100, pull out easily, thereby complicacy, the difficulty safeguarded have been solved, i.e. convenient quick and safe again.Herein, as other embodiment, the bottom of carrier 1 arranges base plate, and the interior diapire of process cavity 100 is provided with pulley, thereby carrier 1 can be pulled out from process cavity 100.
As described in Fig. 1 and Fig. 2, five cooling soaking plate 2 are along vertically arranging to being laminar, and respectively cool off soaking plate 2 and be mounted to carrier 1 respectively.The number of plies of fixed frame 12 is identical with the number of plies of cooling soaking plate 2, and corresponding one by one with cooling soaking plate 2, and each cools off soaking plate 2 and is installed on respectively in each fixed frame 12.Utilize fixed frame 12 to play and support reaction chamber 3, the effect of fixing cooling soaking plate 2 simultaneously, avoid cooling off soaking plate 2 load-bearing and cause damage.
In the present embodiment, cooling soaking plate 2 integral body are along the horizontal plane setting, and integral body is rectangular on horizontal plane, and fixed frame 12 is rectangle frame, and four angles of fixed frame 12 are connected to four supporting tubes 11 respectively, and whole carrier 1 structural strength is big, and steadiness is good.Cooling soaking plate 2 is installed on the fixed frame 12 of carrier 1, makes cooling soaking plate 2 and carrier 1 constitute a module, is convenient to installation and maintenance.Herein, as other embodiment, guaranteeing that the number of supporting tube 11 also can be one, two, three, five or other numbers under the carrier 1 structural strength prerequisite, fixed frame 12 also can be other Polygons frameworks such as triangle frame, pentagon frame.As preferably, supporting tube 11 is the stainless pipe of diameter 50mm, and supporting tube 11 is also replaceable to be along vertically to other strut members such as the back up pad that arranges, solid pillar stiffeners.
Further, carrier 1 also comprises adjustable web member 13, adjustable web member 13 is connected between supporting tube 11 and the fixed frame 12, be used for adjusting fixed frame 12 in vertical position, thereby can adjust distance between two fixed frames 12, and then adjust the distances between the two cooling soaking plate 2 up and down, reach can precision-fit reaction chamber 3 purpose.Adjustable web member 13 can unclamp its screw it is moved relative to supporting tube 11 for web members such as anchor ear, U-shaped cards; Perhaps, vertically to chute is set, fixed frame 12 is slidingly connected to chute in supporting tube 11 upper edges, and adjustable web member 13 is for being used for the screw of fastening supporting tube 11 and fixed frame 12 relative positions.Herein, in other embodiment, fixed frame 12 also can directly be fixedly attached to supporting tube 11 by other modes such as bolt, welding, riveted joints.
As Fig. 2, shown in Figure 3, cooling soaking plate 2 comprises Thiele tube 21, upward soaking panel 22 reaches soaking panel (not shown) down, and Thiele tube 21 is fixed between soaking panel 22 and the following soaking panel.In the present embodiment, the last soaking panel 22 that each cooling soaking plate 2 comprises reaches down, and the number of soaking panel is two, the Thiele tube 21 that each cooling soaking plate 2 comprises is one, two upward soaking panel 22 is in the same plane, two following soaking panels are in the same plane, soaking panel 22 is oppositely arranged one by one with each time soaking panel on each, forms two son cooling soaking plate.Thiele tube 21 passes two son cooling soaking plate 2 successively, and is snakelike or U-shaped or Z-shaped etc. bending are arranged between soaking panel 22 and the following soaking panel, in order to improve the equal thermal effect of soaking panel under upward soaking panel 22 reaches better.Be installed with king-rod 121 in the fixed frame 12, king-rod 121 is between two son cooling soaking plate, in order to improve cooling soaking plate 2 and center fit structure intensity.Herein, as other embodiment, each cooling soaking plate 2 comprises a last soaking panel 22 and following soaking panel that is oppositely arranged, Thiele tube 21 is snakelike or U-shaped or Z-shaped etc. bending are arranged between soaking panel 22 and the following soaking panel, need not to arrange king-rod 121 in the fixed frame 12; As another embodiment, last soaking panel 22 reaches down, and the soaking panel is more than two, the two number is identical, soaking panel 22 is in the same plane on each, each time soaking panel is in the same plane, and soaking panel 22 is oppositely arranged one by one with each time soaking panel on each, forms son cooling soaking plate 2 more than two, king-rod 121 is set in the fixed frame 12, and the number of king-rod 121 lacks 1 than the number of son cooling soaking plate 2.Be understandable that the number of soaking panel was not limited to the specific embodiment of the present invention under the last soaking panel 22 that each cooling soaking plate 2 comprises reached, it can be determined according to the size of reaction chamber 3 and the effect of cooling soaking; In the employing soaking panel 22 and down the soaking panel be considered as strengthening the equal thermal effect of cooling, in other embodiment, cooling soaking plate 2 can only have Thiele tube 21 to constitute, Thiele tube 21 is snakelike along a plane or U-shaped or Z-shaped etc. bending arrange.
As preferably, Thiele tube 21 can adopt stainless steel tube or copper pipe, fixedlys connected with following soaking panel with last soaking panel 22 by welding.Last soaking panel 22 reaches down, and the soaking panel adopts thick stainless steel plate or aluminium sheet or the good etch-proof sheet material of other thermal conductivity of 2-3mm, go up simultaneously soaking panel 22 and down the surface of soaking panel adopt concaveconvex structure and surface plating carbon to handle, to increase cooling soaking area and effect.
The PECVD device also comprises the liquid cooling switching equipment, and each two ends of cooling off the Thiele tube 21 of soaking plate 2 all is connected to the liquid cooling switching equipment, realizes last soaking panel 22 and the cooling soaking of soaking panel down by liquid-flow.Further, the liquid cooling switching equipment comprises divider 41 and fluid exchange machine (not shown), divider 41 comprises output channel 411 and input channel 412, and the two ends of Thiele tube 21 are communicated to output channel 411 and input channel 412 by the form of welding or two cutting ferrules respectively.The fluid exchange machine is arranged on outside the process cavity 100.Output channel 411 and output channel 412 reach outside the process cavity 100 by sealing member 42 and are connected with the fluid exchange machine.As preferably, liquid adopts water.When adopting PECVD device of the present invention to carry out technology, fluid temperature is arranged on 60 degrees centigrade, and pressure is set in 2.5～3bar, and flow velocity is 1～1.5m/s, and each reaction chamber 3 temperature contrast each other can be controlled at ± 1 ℃.Because temperature reaches 200 ℃ during reaction chamber 3 technologies; even it is higher; for the heat radiation that prevents reaction chamber 3 is given whole process cavity 100; process cavity 100 temperature are raise cause vaccum seal ring to damage, remain on 60-70 ℃ of scopes so will cool off the interior temperature of the cooling tube of soaking plate 2, make its effect with cooling; avoid the process cavity temperature too high; the sealed structures such as sealing-ring of protection process cavity make the temperature of process cavity unlikely low excessively again, the energy of the heating that avoids waste.
The both sides up and down of each reaction chamber 3 are provided with cooling soaking plate 2, to guarantee the equal thermal effect of reaction chamber 3.It is safeguarded.By cooling soaking and the buffer action of cooling soaking plate 2, the heat radiation of eliminating between each reaction chamber 3 disturbs, and guarantees the consistence of each reaction chamber 3 temperature.
Each cools off soaking plate 2 and is connected in parallel, to guarantee respectively to cool off the consistence of soaking plate 2 temperature.At present embodiment, each inlet end that cools off the Thiele tube 21 of soaking plate 2 all is connected to input channel 411, exit end and all is connected to output channel 412.
Particularly, as shown in Figures 1 and 2, the upper surface of fixed frame 12 is provided with the roller 122 that cooperates for reaction chamber 3, so that sliding into of reaction chamber 3 skids off.Roller 122 is at least four, is matrix and arranges, and is placed on balance and the stability of fixed frame 12 to guarantee reaction chamber 3.In the present embodiment, be respectively equipped with three rollers 122 on the frame that two were oppositely arranged and were parallel to king-rod 121 on the fixed frame 12, also be provided with three rollers 122 on the king-rod 121 simultaneously, to form three rows totally nine rollers 122.Be positioned on the fixed frame 12 of top layer owing to need not placing response chamber 3, so need not to arrange roller 122 on this fixed frame 12 and the king-rod 121 thereof.For the cleanliness factor of the environment that guarantees reaction cavity, roller 122 uses no oily roller.Roller 122 is arranged on the fixed frame 12, can avoid reaction chamber 3 directly to contact the wearing and tearing that friction causes when avoiding the two to relatively move with cooling soaking plate 2.
Further, as Fig. 2, shown in Figure 4, for the stability that guarantees that reaction chamber 3 slides, the lower surface of fixed frame 12 is provided with straight line hanger rail 123, the upper surface of reaction chamber 3 is provided with the micro-wheels 33 that matches with straight line hanger rail 123, can guarantee that reaction chamber 3 is to move along a straight line sliding into when skidding off, the collision between reaction chamber 3 and the carrier 1 is avoided in the location of realization response chamber 3.Simultaneously, because the upper surface of reaction chamber 3 is provided with micro-wheels 33, can prevent that reaction chamber 3 from putting back.Owing to be positioned on the fixed frame 12 of bottom owing to need not placing response chamber 3, so its lower surface need not to arrange straight line hanger rail 123.
Because the top of reaction chamber 3, bottom contact by the point of micro-wheels 33 and roller 122 respectively, effectively reduce the calorific loss of reaction chamber 3, thereby save energy.Installing, when safeguarding, can utilize lift cart that reaction chamber 3 integral body are pulled out from carrier 1, namely convenient, laborsaving quick again, the maintenance time of economy system greatly.
As shown in Figure 4, reaction chamber 3 comprises top electrode portion 31 and the lower electrode portion 32 that cooperatively interacts, be formed for the processing chamber of technological reaction between top electrode portion 31 and the lower electrode portion 32, the upper face center position of top electrode portion 31 offers the inlet mouth 301 that is communicated to processing chamber, offer air outlet 302 on the reaction chamber 3, air outlet 302 is two or more, evenly is arranged in the circumferential junction between top electrode portion 31 and the lower electrode portion 32.Air outlet 302 is four, is separately positioned in twos on 3 two relative sidewalls of reaction chamber, be positioned at two air outlets 302 on the same sidewall along level to the setting of arranging.Owing to adopt four air outlet 302 structures in both sides, inlet mouth 301 is opened in the middle position of top electrode portion 31, inlet mouth 301 to the distance of each air outlet 302 equates, be that reactant gases equates from the distance that inlet mouth 301 arrives each air outlet 302, make air-flow have good homogeneity in 3 inner zones of reaction chamber, thereby to the substrate preparation film time, can obtain preferable membrane uniformity.
Further, top electrode portion 31 internal surface down is provided with all gas web plate (not shown)s of multilayer, to improve the homogeneity of air-flow in the reaction chamber 3.All the gas web plate is provided with a plurality of through holes, adjacent two all the dislocation of the through hole on the gas web plate cooperate, and each all on the gas web plate diameter of through hole different, each all the gas web plate arrange successively from top to bottom according to the descending order of through-hole diameter, and adjacent two all are provided with between the gas web plate at interval, as preferably, be spaced apart 1～3mm between each layer, all the gas web plate is three or four, is made by the stainless steel plate that 1～2mm is thick.
302 places, air outlet are provided with the gas buffer plate (not shown) of aperture plate shape, be used for making gas in the air outlet 302 punishment cloth even.
As preferably, the structured material of each reaction chamber 3 inside and associated components is anti-plasma and corrosion resistant material, such as, internal portion all gas web plate and sealing element can adopt pottery and PTFE materials for support, can largely reduce maintenance needs and cost.
Temperature control probe is electrically connected to temperature regulator, is used for the working order of control heater 34.In the present embodiment, temperature control probe is installed on the inner roof wall of reaction chamber 3, and herein, in other embodiment, temperature control probe also can be installed on reaction chamber 3 inner elsewheres.Temperature control probe is K type thermocouple probe, perhaps hot resistance, perhaps other temp probes.
The temperature monitoring probe is electrically connected to temperature regulator, is used for monitoring the temperature in the reaction chamber 3, and the temperature in the protective reaction chamber 3 is equal to or less than preset temp.The temperature monitoring probe is K type thermocouple probe, perhaps hot resistance, perhaps other temp probes.
The outside surface of reaction chamber 3 is provided with metallic insulation reflector (not shown), the surface of metallic insulation reflector scribbles heat-reflecting layer, heat scatters and disappears in the time of can reducing to heat, improve heat temperature raising speed, save heat-up time, and further reduce the temperature of reaction chamber 3 to the influence of process cavity 100.
Further, the PECVD device also comprises be used to the excitation system (not shown) that plasma excitation is provided.As preferably, the supply frequency of excitation system is 13.56～100MHZ.The supply frequency of the excitation system of each reaction chamber 3 can be identical, can also be different.Excitation system and one by one corresponding matching identical with reaction chamber 3 numbers makes the excitation system that each reaction chamber 3 adopts separately to be conducive to realize the variation of frequency and the uniformly distributing of power.Because the present invention adopts the single chamber single chip architecture, in the feed-in of excitation system, can adopt the multiple spot feed-in, adopt all gas web plates of multilayer in the gas circuit air inlet, further guarantee the homogeneity of excitation system Distribution of Magnetic Field and the homogeneity of air-flow, and then guarantee the homogeneity of whole rete.
As shown in Figure 5, PECVD also comprises vacuum system, remote plasma source (Remote Plasma Source is called for short RPS) cleaning system (hereinafter to be referred as the RPS cleaning system), reaches air-channel system 6.Each reaction chamber 3 shares vacuum system, RPS cleaning system, reaches air-channel system 6.RPS cleaning system and vacuum system all are communicated to each reaction chamber 3 by air-channel system 6.
In the present embodiment, air-channel system 6 comprises a main pipe line 61 and two subtubes, the first subtube 62a and the second subtube 62b, and two subtube 62a, 62b lay respectively at the both sides of reaction chamber 3.Two subtube 62a, 62b are communicated to the air outlet 302 of each reaction chamber 3 both sides respectively.A spring loaded pipe connection is passed through to subtube, so that the installation and removal between air outlet and the subtube in two air outlets 302 that are positioned at the same side.The subtube edge is vertically to setting, in order to be connected to each reaction chamber 3 simultaneously.Be equipped with valve between main pipe line 61 and two subtube 62a, 62b, namely valve is two, the first valve 63a and the second valve 63b.Vacuum system is connected to main pipe line 61.
The RPS cleaning system is four, is installed on subtube two ends straight up in twos respectively, comprises two RPS cleaning system 5a and two the 2nd RPS cleaning system 5b of being installed on the first subtube 62a.Vacuum system is one, is communicated to main pipe line 61.The RPS cleaning system is with NF
3Become active very high fluorion through the plasma body ionization, by its with the reaction chamber processes after residue (Si and compound thereof) react after, with resultant of reaction SiF
4Deng extracting out through vacuum system again.Because air-channel system 6 links together with reaction chamber when reaction chamber carries out technology, also can need to remove with the reaction chamber 3 the same residues that leave, fluorion is to enter in the reaction chamber 3 through air-channel system 6, can the residue in the air-channel system 6 be cleaned when cleaning.
By present embodiment vacuum system, RPS cleaning system, and the cooperation of air-channel system 6, can guarantee each reaction chamber 3 and air-channel system 6 are cleaned completely, residual compounds impurity in cleaning reaction chamber 3 inwalls and the air-channel system 6 is for plated film next time provides the process environments of cleaning.In the present embodiment, as shown in Figure 6, four RPS cleaning systems all arrange the outside of process cavity.
Below can guarantee the homogeneity of substrate rete by two groups of description of test PECVD devices provided by the invention.
Experiment one, its concrete steps are as follows.
S1, get four 1300 * 1100 * 3mmTCO conducting glass substrates and be placed on the lower electrode of reaction chamber 3, face outwardly, glass surface is electrode part 32 down.
S2, set 3 temperature 180-200 ℃ of reaction chambers, set in the cooling soaking plate 2 water temp 60-70 ℃;
S3, be extracted into 2-3 * 10 when reaction chamber 3 vacuum
-3After the mbar, feed 15-20slm H from inlet mouth 301
2, conditioned reaction chamber 3 pressure are 0-1mbar simultaneously, preheating 1-2min;
S4, conditioned reaction chamber 3 pressure 1-2mbar, heating 5-6min closes H
2;
S5, feed H again
25-6slm, SiH
45-6slm enters reaction chamber 3, conditioned reaction chamber 3 pressure 0-1mbar, and 10-20s in advance ventilates;
S6, open excitation system, with 40.68MHZ power supply, 400-500W power discharge 10-15min, deposition of amorphous silicon intrinsic layer;
S7, powered-down, time-delay 5-10s closes H
2, SiH
4, vacuumize.
By above step, 4 non-crystalline silicon substrates of plated film are tested through mapping simultaneously, and the homogeneity of rete is 7.2%.
Experiment two, its concrete steps are as follows.
S1, get four 1300 * 1100 * 3mmTCO conducting glass substrates and be placed on the lower electrode of reaction chamber 3, face outwardly, glass surface is electrode part 32 down;
S2, set 3 temperature 160-180 ℃ of reaction chambers, set in the cooling soaking plate 2 water temp 60-70 ℃;
S3, after reaction chamber 3 vacuum are extracted into 3-4 * 10-3mbar, feed 20-30slmH from inlet mouth 301
2, while conditioned reaction chamber 3 pressure 1-2mbar, preheating 1-2min;
S4, conditioned reaction chamber 3 pressure 2-3mbar, heating 2-3min closes H
2
S5, feed H again
270-80slm, SiH
44-5slm enters reaction chamber 3, conditioned reaction chamber 3 pressure 3-4mbar, and 10-20s in advance ventilates;
S6, open excitation system, with 40.68MHZ power supply, 3500-4000W power discharge 40-50min;
S7, close SiH
4Feed H
270-80slm, conditioned reaction chamber 3 pressure 2-3mbar open the 40.68MHZ power supply with 2500-3000W power discharge 10-20s;
S8, increase H
2To 90-100slm, conditioned reaction chamber 3 pressure 3-4mbar open the 40.68MHZ power supply with 1000-2000W power discharge 40-50s;
S9, reduction 40.68MHZ power supply are to 300-500W power discharge 2-3min, deposition micro crystal silicon intrinsic layer;
S10, powered-down, time-delay 10-20s closes H
2, vacuumize.
By above step, 4 microcrystal silicon substrates of plated film are tested through mapping simultaneously, and the homogeneity of rete is 6.5%.
By above two realizations as can be seen, when adopting PECVD device provided by the invention to carry out technology, owing to be provided with soaking between each process reaction chamber, reaction chamber adopts the both sides mode of giving vent to anger, the mutual temperature contrast of each reacting chamber space can be controlled at ± 1 degree centigrade, and the homogeneity of film is less than 8%.
The step of cleaning plated film afterreaction chamber 3 by the RPS mode is as follows.
S1, set 3 temperature 180-200 ℃ of reaction chambers, set in the cooling soaking plate 2 water temp 60-70 ℃;
S2, utilize vacuum system to each reaction chamber 3 vacuum-treat, when reaction chamber 3 vacuum are extracted into 3-4 * 10
-3After the mbar, close the first valve 63a, open the second valve 63b, open two RPS cleaning system 5a, simultaneously feed Ar10-20slm in two RPS cleaning system 5a, conditioned reaction chamber 3 pressure are 1-2mbar, two RPS cleaning system 5a pre-arcing 1-2min;
S3, in two RPS cleaning system 5a, feed NF again
320-30slm reduces Ar to 5-10slm, conditioned reaction chamber 3 pressure 1-2mbar, two RPS cleaning system 5a discharge 40-50s; Owing to also can be attended by F when cleaning
2Deng secondary pollutant, the effect of Ar is to play to make the easier formation plasma body of NF3, and namely easier starter is similar to the catalyst action in the chemical reaction.
S4, stop to feed Ar, increase NF
3To 40-50slm, two RPS cleaning system 5a produce F ion cleaning reaction chamber 2-3min;
S5, close two RPS cleaning system 5a, open the first valve 63a, close the second valve 63b, open right side two the 2nd RPS cleaning system 5b up and down, simultaneously in two RPS cleaning system 5b, feed Ar10-20slm, conditioned reaction chamber 3 pressure 1-2mbar, the 2nd RPS cleaning system 5b pre-arcing 1-2min;
S6, feed NF to the 2nd RPS cleaning system 5b again
320-30slm reduces Ar to 5-10slm, conditioned reaction chamber pressure 1-2mbar, the 2nd RPS cleaning system 5b 40-50s that discharges;
S7, stop to feed Ar, increase NF
3To 40-50slm, the 2nd RPS cleaning system 5b produces F ion cleaning reaction chamber 2-3min;
S8, close up and down two the 2nd RPS cleaning system 5b of right side, open the second valve 63b, close the NF that feeds the 2nd RPS cleaning system 5b
3, feed Ar5-10slm, NF from inlet mouth 301
310-20slm, conditioned reaction chamber pressure 1-2mbar, 40-50s in advance ventilates;
S9, open excitation system, with power supply 40.68MHZ, 2000-3000W power discharge 4-5min, the remaining Trace Silicon compound of cleaning reaction chamber 3 inwalls;
S10, powered-down, time-delay 5-10s closes Ar, NF
3, vacuumize.
Because RPS cleaning system and vacuum system all are communicated to each reaction chamber 3 by air-channel system 6, carry out above-mentioned cleaning after, air-channel system 6 and each reaction chamber 3 are thoroughly cleaned, effectively guarantee the cleaning of coating process environment next time.
Above embodiment does not constitute the restriction to this technical scheme protection domain.Any at above-mentioned embodiment spirit and principle within do modification, be equal to and replace and improvement etc., all should be included within the protection domain of this technical scheme.
Claims (10)
1. a PECVD device is characterized in that, comprises process cavity, and all is arranged on carrier, cooling soaking plate and at least one reaction chamber in the described process cavity; Described cooling soaking plate is a plurality of, along vertically arranging and be mounted to described carrier to being laminar; Described reaction chamber is horizontally set between adjacent two described cooling cooling soaking plate, and the both sides up and down of each described reaction chamber are provided with described cooling soaking plate.
2. PECVD device according to claim 1, it is characterized in that, described carrier comprise strut member and with described cooling soaking plate a plurality of fixed frames one to one, a plurality of described fixed frames are along vertically arranging and be installed on described strut member to being laminar, and each described cooling soaking plate is installed on respectively in each described fixed frame.
3. PECVD device according to claim 2 is characterized in that, described cooling soaking plate comprises Thiele tube, go up soaking panel and soaking panel down, described Thiele tube on described the soaking panel with described down between the soaking panel; Described PECVD device also comprises the liquid cooling switching equipment, and the two ends of the Thiele tube of each described cooling soaking plate all are connected to the liquid cooling switching equipment.
4. PECVD device according to claim 3 is characterized in that, the number of soaking panel was identical under the last soaking panel that each described cooling soaking plate comprises reached, and was two or more; Each described upward soaking panel and each described soaking panel down are oppositely arranged one by one and form son cooling soaking plate; The Thiele tube number that described cooling soaking plate comprises is one; Be installed with king-rod in the described fixed frame, described king-rod is between adjacent two son cooling soaking plate.
5. PECVD device according to claim 2 is characterized in that, described carrier also comprises adjustable web member, and described adjustable web member is connected between described strut member and the described fixed frame, is used for adjusting described fixed frame in vertical position.
6. PECVD device according to claim 1 is characterized in that, described reaction chamber comprises top electrode portion and the lower electrode portion that cooperatively interacts, and is formed for the processing chamber of technological reaction between described top electrode portion and the described lower electrode portion; The upper face center position of described top electrode portion offers the inlet mouth that is communicated to described processing chamber, offer the air outlet on the described reaction chamber, described air outlet is two or more, evenly is arranged in the circumferential junction between described top electrode portion and the described lower electrode portion.
7. PECVD device according to claim 1 is characterized in that, described reaction chamber horizontal slip is placed between adjacent two described cooling soaking plate.
8. PECVD device according to claim 7 is characterized in that, the upper surface of described fixed frame is provided with the roller that cooperates for described reaction chamber; The lower surface of described fixed frame is provided with the straight line hanger rail, and the upper surface of described reaction chamber is provided with the micro-wheels that matches with described straight line hanger rail.
9. PECVD device according to claim 1 is characterized in that, described carrier slides and is positioned in the described process cavity.
10. PECVD device according to claim 1 is characterized in that, described PECVD also comprises vacuum system, remote hydrogen plasma clean system, reaches air-channel system; Each described reaction chamber shares described vacuum system, described remote hydrogen plasma clean system, and described air-channel system; Described remote hydrogen plasma clean system and described vacuum system all are communicated to each described reaction chamber by described air-channel system.
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| CN105575767A (en) * | 2014-11-03 | 2016-05-11 | 上海微电子装备有限公司 | Cleaning apparatus and method for ultrahigh vacuum chamber |
| CN108265590A (en) * | 2018-03-13 | 2018-07-10 | 安徽工程大学 | A kind of hydraulic control system of asphalt road surface by microwave heating in-situ heat regeneration device |
| CN110612363A (en) * | 2017-03-31 | 2019-12-24 | 迪罗拉科技有限公司 | System and method for coating a surface |
| CN115547896A (en) * | 2022-11-29 | 2022-12-30 | 无锡邑文电子科技有限公司 | Non-water-cooling semiconductor wafer low-temperature treatment equipment |
| CN116586263A (en) * | 2023-05-06 | 2023-08-15 | 派珂纳米科技(苏州)有限公司 | High temperature resistant organic polymer film deposition equipment |
| CN116892016A (en) * | 2023-09-11 | 2023-10-17 | 上海星原驰半导体有限公司 | Process chamber device and wafer processing equipment |
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| CN201427992Y (en) * | 2009-07-21 | 2010-03-24 | 深圳市宇光高科新能源技术有限公司 | PECVD system with inner heater |
| CN203284466U (en) * | 2013-05-28 | 2013-11-13 | 南方科技大学 | PECVD device |
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| CN201427992Y (en) * | 2009-07-21 | 2010-03-24 | 深圳市宇光高科新能源技术有限公司 | PECVD system with inner heater |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105575767A (en) * | 2014-11-03 | 2016-05-11 | 上海微电子装备有限公司 | Cleaning apparatus and method for ultrahigh vacuum chamber |
| CN105575767B (en) * | 2014-11-03 | 2019-08-23 | 上海微电子装备（集团）股份有限公司 | Cleaning device and method for ultrahigh vacuum chamber |
| CN110612363A (en) * | 2017-03-31 | 2019-12-24 | 迪罗拉科技有限公司 | System and method for coating a surface |
| CN110612363B (en) * | 2017-03-31 | 2021-12-21 | Agm集装箱控制公司 | System and method for coating a surface |
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| CN108265590A (en) * | 2018-03-13 | 2018-07-10 | 安徽工程大学 | A kind of hydraulic control system of asphalt road surface by microwave heating in-situ heat regeneration device |
| CN108265590B (en) * | 2018-03-13 | 2023-05-26 | 安徽工程大学 | Hydraulic control system of microwave heating asphalt pavement in-situ heat regeneration device |
| CN115547896A (en) * | 2022-11-29 | 2022-12-30 | 无锡邑文电子科技有限公司 | Non-water-cooling semiconductor wafer low-temperature treatment equipment |
| CN115547896B (en) * | 2022-11-29 | 2023-03-10 | 无锡邑文电子科技有限公司 | Non-water-cooling semiconductor wafer low-temperature processing equipment |
| CN116586263A (en) * | 2023-05-06 | 2023-08-15 | 派珂纳米科技(苏州)有限公司 | High temperature resistant organic polymer film deposition equipment |
| CN116892016A (en) * | 2023-09-11 | 2023-10-17 | 上海星原驰半导体有限公司 | Process chamber device and wafer processing equipment |
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