CN208151477U - A kind of PECVD device of controllable air-flow uniform and stable - Google Patents
A kind of PECVD device of controllable air-flow uniform and stable Download PDFInfo
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- CN208151477U CN208151477U CN201820594749.7U CN201820594749U CN208151477U CN 208151477 U CN208151477 U CN 208151477U CN 201820594749 U CN201820594749 U CN 201820594749U CN 208151477 U CN208151477 U CN 208151477U
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Abstract
The utility model discloses a kind of PECVD devices of controllable air-flow uniform and stable, including radio frequency mechanism, sediment box and wave transparent plate, the air inlet pipe to be connected on air inlet, and the escape pipe is connected on gas outlet；Equalizer flow tube is provided between the air inlet pipe and an air outlet pipe, the equalizer flow tube two sides are respectively arranged with radio frequency mechanism, and the wave transparent plate is set between substrate and rf board, and wave transparent plate is movably connected on equalizer flow tube close to rf board side.The utility model is provided with equalizer flow tube between air inlet pipe and an air outlet pipe, for guiding air-flow, the plated film work of multiple groups silicon wafer can be carried out simultaneously, and pass through the setting of wave transparent plate, so that the spacing placed between silicon wafer and wave transparent plate on substrate is adjustable to 1-2mm, so that air-flow is in flowing, only by the narrow spacing between silicon wafer and wave transparent plate, it can be more easier to be uniformly distributed and flowed with air-flow, to reach better coating effects, extremely be worthy to be popularized.
Description
Technical field
The utility model relates to PECVD coating technique field, the PECVD of specially a kind of controllable air-flow uniform and stable is filled
It sets.
Background technique
Plasma activated chemical vapour deposition (Plasma Enhanced Chemical Vapor Deposition,
PECVD) technology is to generate the substances such as charged particle, free radical, active group using plasma discharge to occur in substrate surface
The technology of chemical reaction deposit film.Because the plasma exciatiaon activity of reactant gas molecules, makes deposition film technique
Temperature is lower, and deposition rate is fast, and institute's growing film compactness is good, and defect is few, good process repeatability and be widely used.
It is applied in semiconductor chip processing industry earliest, is used for cvd silicon oxide, silicon nitride film；Liquid crystal is flat in recent years
Plate display technology and photovoltaic industry flourish, and PECVD technique be used to prepare thin film transistor (TFT) (Thin-Film
Transistor, TFT) especially prepare amorphous silicon, microcrystalline silicon film.Core equipment-PECVD device hair in these fields
Exhibition experienced the process for the large area for being used for TFT, photovoltaic hull cell till now by the small size in semiconductor, etc.
It is flat till now very high that plasma discharge mode also experienced the Electron Cyclotron Resonance Discharge of high-frequency microwave, inductively-coupled discharge
The process of frequency capacitively coupled discharge, the PECVD device of existing mainstream, which is typically employed in same vacuum chamber, is arranged multiple techniques
The structure type of reaction chamber.
PECVD device has following problem in existing mainstream technology：1) for large-area substrates prepare film when, gas from
The side of reaction chamber enters, and extracts out from the other side, thus the uniformity of air-flow is very poor；2) reaction chamber can be heated using independent,
But because multiple reaction chamber storehouses are arranged, the technological reaction room temperature that certainly will will cause top is higher than the reaction chamber temperature of bottom, from
And it is poor to generate the mutual temperature consistency of each reaction chamber；3) reaction chamber is separately fixed at the inner wall of vacuum chamber, between mutual
Gap very little causes later maintenance complicated, time-consuming, difficult；4) multiple reaction chambers are arranged in the same vacuum chamber, are caused entire
Device is very heavy, weighs when more several tons, this makes later maintenance, maintenance personnel's operation very inconvenient, and there are security risks.With
The continuous increase of substrate area, to uniformity of film, electrical property, more stringent requirements are proposed, this just needs further to improve instead
Answer the temperature consistency and airflow homogeneity of room.In radio frequency parallel plate type reaction chamber, many factors influence process reaction chamber
Temperature consistency and airflow homogeneity.How the relevant design of optimization process reaction chamber is passed through, and obtaining has higher temperature one
The PECVD modular unit of cause property and airflow homogeneity, has important practical significance and application value.
In order to solve the problems, such as PECVD device set forth above, in the prior art, application No. is " 201310203771.6 "
A kind of PECVD device, be provided with soaking by the two sides up and down of each reaction chamber, pass through the cooling soaking and isolation of soaking
Effect, eliminates the heat radiation interference between each reaction chamber, guarantees the consistency of each reaction chamber temperature；Cooling heating plate tool simultaneously
Play the role of cooling, avoids process cavity temperature excessively high, protect the sealing structure of process cavity, and make the temperature of process cavity
Will not be too low, the energy for avoiding waste from heating.
But for first, when preparing film for large-area substrates, gas enters from the side of reaction chamber, from another
Side extraction, thus very poor this problem of uniformity of air-flow, a kind of above-mentioned application documents " PECVD device " still do not have
It is solved well, causes coating effects to be unable to reach more excellent, so airflow homogeneity is still to be optimized.
Utility model content
It is above-mentioned to solve the purpose of this utility model is to provide a kind of PECVD device of controllable air-flow uniform and stable
The problem of being proposed in background technique.
To achieve the above object, the utility model provides the following technical solutions：
A kind of PECVD device of controllable air-flow uniform and stable, including radio frequency mechanism, sediment box and wave transparent plate, deposition
Case both ends offer air inlet and air outlet respectively, are provided with air inlet pipe, escape pipe and heating device in the deposition box cavity,
The air inlet pipe is connected on air inlet, and the escape pipe is connected on gas outlet；
Equalizer flow tube is provided between the air inlet pipe and an air outlet pipe, the equalizer flow tube two sides are respectively arranged with radio frequency mechanism,
The radio frequency mechanism includes substrate, rf board and wave transparent plate disposed in parallel, and the wave transparent plate is set to substrate and rf board
Between, and wave transparent plate is movably connected on equalizer flow tube close to rf board side.
Preferably, the heating device includes heat-conducting plate and heating wire, and mounting hole, the electricity are offered in the heat-conducting plate
Heated filament is fixed in mounting hole, and substrate and rf board pass through heat-conducting plate and be fixed on deposition chamber interior wall.
Preferably, it is respectively connected in the air inlet pipe, escape pipe and equalizer flow tube and inhales wave plate, the suction wave plate, which is set to, to be leaned on
Nearly rf board side.
Preferably, the air inlet is connected with gas heater far from air inlet pipe side.
Preferably, aspirating hole is offered on the sediment box, is connected with vacuum machine on the aspirating hole.
Preferably, the air inlet pipe offers air inlet close to air inlet one end, is provided with relief valve in the air inlet,
Described air inlet one end is connected with annular chamber, and the annular chamber offers storage chamber far from air inlet side, and the annular chamber is logical
It crosses intercommunicating pore to be connected on storage chamber, and storage chamber is connected with several tap holes far from annular chamber side.
Preferably, the equalizer flow tube corresponds to tap hole and offers several equal discharge orifices, and is respectively provided in each equal discharge orifice
There is stream exhaust fan.
Preferably, the equalizer flow tube is fixed on sediment box by fixed column, and light bulb is provided in fixed column.
Preferably, venthole is offered in the escape pipe, the venthole is set as tubaeform far from gas outlet one end.
Preferably, the venthole is provided with outlet exhaust fan close to gas outlet side.
Compared with prior art, the utility model has the beneficial effects that：
The utility model is provided with equalizer flow tube between air inlet pipe and an air outlet pipe, for guiding air-flow, can carry out simultaneously
The plated film of multiple groups silicon wafer works, and passes through the setting of wave transparent plate, so that placing between silicon wafer and wave transparent plate on substrate
Spacing is adjustable to 1-2mm,, can be with only by the narrow spacing between silicon wafer and wave transparent plate so that air-flow is in flowing
Air-flow can be more easier to be uniformly distributed and flowed, and to reach better coating effects, extremely be worthy to be popularized.
Detailed description of the invention
Fig. 1 is the sediment box overall structure diagram of the utility model；
Fig. 2 is the air feeder structure schematic top plan view of the utility model；
Fig. 3 is the outlet duct structures schematic top plan view of the utility model；
Fig. 4 is the equalizer flow tube structure schematic top plan view of the utility model；
Fig. 5 is the schematic diagram of heating device of the utility model.
In figure：1 sediment box, 2 air inlets, 3 gas outlets, 4 air inlet pipe, 41 air inlets, 42 relief valves, 43 annular chambers, 44 connect
Through-hole, 45 storage chambers, 46 tap holes, 5 escape pipes, 51 ventholes, 511 outlet exhaust fans, 6 substrates, 7 rf boards, 8 equalizer flow tubes,
Exhaust fan, 83 fixed columns, 9 wave transparent plates, 10 heat-conducting plates, 11 mounting holes, 12 heating wire, 13 suction wave plates, 14 are flowed in 81 equal discharge orifices, 82
Gas heater, 15 aspirating holes, 16 vacuum machines, 100 silicon wafers.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Fig. 1-5 is please referred to, the utility model provides a kind of technical solution：
A kind of PECVD device of controllable air-flow uniform and stable, including radio frequency mechanism, sediment box 1 and wave transparent plate 9,
PECVD is to make the gas ionization containing film composed atom by microwave or radio frequency etc., is being partially formed plasma, and wait from
Daughter chemical activity is very strong, it is easy to react, go out desired film in deposition on substrate, in order to make chemical reaction can be
It is carried out at lower temperature, the activity of plasma is utilized to promote to react, thus this CVD is known as plasma enhancing
Vapor deposition is learned, experiment mechanism is to make the gas containing film composed atom by microwave or radio frequency etc., is being partially formed
Gas ions, and plasma chemistry activity is very strong, it is easy to it reacts, goes out desired film in deposition on substrate.
1 both ends of sediment box offer air inlet 2 and gas outlet 3 respectively, and air inlet 2 is used to input external reaction gas, out
Port 3 is used to the gas after output-response, is provided with air inlet pipe 4, escape pipe 5 and heating device, air inlet pipe in 1 inner cavity of sediment box
4 be to prevent the not temperature flowing of air-flow from causing non-uniform for carrying out air-flow restriction to the gas entered inside sediment box 1
Phenomenon, air inlet pipe 4 are connected on air inlet 2, and air inlet pipe 4 offers air inlet 41, the gas of air inlet 2 close to 2 one end of air inlet
Body is directly entered inside air inlet pipe 4 by nearly stomata 41, is provided with relief valve 42 in air inlet 41, the setting of relief valve 42,
So that gas after entering air inlet 2, after can only achieve certain pressure, could open relief valve 42, so that gas can
Further to 4 internal flow of air inlet pipe, to guarantee certain pressure, gas pressure intensity can be prevented inadequate, equal flow phenomenon is avoided to become
Weak, so that enough height, 41 one end of air inlet are connected with annular chamber 43 to the external gas pressure provided always, gas passes through relief valve 42
It enters in annular chamber 43, annular chamber 43 offers storage chamber 45 far from 41 side of air inlet, and annular chamber 43 passes through intercommunicating pore 44
It is connected on storage chamber 45, subsequent gas sequentially enters three chambers to storage chamber 45 along intercommunicating pore 44 from annular chamber 43
Section, and storage chamber 45 is connected with several tap holes 46 far from 43 side of annular chamber, as shown in Figure of description 2, tap hole 46 is opened
There are three if, for synchronizing output gas air-flow in the same direction simultaneously, keep gas flowing more uniform, radio frequency coating effects are more preferable.
Escape pipe 5 is connected on gas outlet 3, and escape pipe 5 is used to be discharged the gas after reaction, is offered out in escape pipe 5
Stomata 51, venthole 51 are used to receive the reaction gas of the outflow of equalizer flow tube 8, carry out gas in order to facilitate venthole 51 and receive row
Out, set tubaeform far from 3 one end of gas outlet for venthole 51, venthole 51 is provided with outlet row close to 3 side of gas outlet
Fan 511, outlet exhaust fan 511 can further be evacuated reaction gas, allow escape pipe 5 preferably will be anti-
Gas after answering is discharged from gas outlet 3.
Equalizer flow tube 8 is provided between air inlet pipe 4 and escape pipe 5, equalizer flow tube 8 is used to correspond to venthole 51 and tap hole 46,
The corresponding tap hole 46 of equalizer flow tube 8 offers several equal discharge orifices 81, and stream exhaust fan 82 is provided in each discharge orifice 81,
Stream exhaust fan 82 is used to the reaction gas of 4 side of air inlet pipe twitch being emitted into 5 side of escape pipe, for current limliting and flows,
Equalizer flow tube 8 is fixed on sediment box 1 by fixed column 83, and light bulb is provided in fixed column 83, and the setting of light bulb can be convenient
Staff inside sediment box 1 to observing.
8 two sides of equalizer flow tube are respectively arranged with radio frequency mechanism, radio frequency mechanism include substrate 6 disposed in parallel, rf board 7 and
Wave transparent plate 9, radio-frequency voltage are added between substrate 6 and rf board 7, then just will appear capacitor coupling between substrate 6 and rf board 7
Box-like gas discharge, and plasma is generated, wave transparent plate 9 is set between substrate 6 and rf board 7, and 9 activity of wave transparent plate
Equalizer flow tube 8 is connected to close to 7 side of rf board, 9 one end of wave transparent plate directly rides upon in equalizer flow tube 8, and the other end rides upon air inlet
On pipe 4 or escape pipe 5.
Wave transparent plate 9 uses common transparency glass plate, can pass through in order to radio frequency, and wave transparent plate 9 is still used to
Current limliting is carried out to reaction gas, prevents reaction gas from floating to 1 four corners of sediment box and goes, so that reaction gas is in wave transparent plate
It is flowed between 9 and silicon wafer 100, therefore air-flow is more easier to control, air-flow is also just more uniform, facilitates PECVD plated film.
Aspirating hole 15 is offered on sediment box 1, vacuum machine 16 is connected on aspirating hole 15, and aspirating hole 15 is used to inside
It carries out vacuumizing work, so that the pressure inside sediment box 1 generally remains in 133Pa or so.
Heating device is used to heat sediment box 1, so that internal temperature reaches temperature required for plated film, can adopt
It is heated with a variety of heating devices, in the present invention, preferably a kind of heating device includes heat-conducting plate 10 and heating wire
12, mounting hole 11 is offered in heat-conducting plate 10, and heating wire 12 is fixed in mounting hole 11, and substrate 6 and rf board 7 are by thermally conductive
Plate 10 is fixed on 1 inner wall of sediment box, and heating device can make substrate 6 identical with the temperature of 7 two sides of rf board, prevents inside
Temperature difference is excessive, and the installation of more convenient substrate 6 and rf board 7 is fixed.
Preferably as one, it is respectively connected in air inlet pipe 4, escape pipe 5 and equalizer flow tube 8 and inhales wave plate 13, inhaled wave plate 13 and set
It is disposed adjacent to 7 side of rf board, wave plate 13 is inhaled and is made of the material that can not penetrate radiofrequency signal, such as carborundum plate, Ke Yiyou
Effect prevents reaction gas from forming radio frequency plated film inside air inlet pipe 4, escape pipe 5 and equalizer flow tube 8, largely avoids wave
Take.
Preferably as one, air inlet 2 is connected with gas heater 14 far from 4 side of air inlet pipe, and gas heater 14 can
To be heated before reaction gas enters 1 inner cavity of sediment box to gas, so that into behind 1 inside of sediment box, it can be faster
Reach reaction temperature, be convenient for PECVD plated film.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired
Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.
Claims (10)
1. a kind of PECVD device of controllable air-flow uniform and stable, including radio frequency mechanism, sediment box (1) and wave transparent plate (9),
Sediment box (1) both ends offer air inlet (2) and gas outlet (3) respectively, it is characterised in that：It is set in sediment box (1) inner cavity
It is equipped with air inlet pipe (4), escape pipe (5) and heating device, the air inlet pipe (4) is connected on air inlet (2), the escape pipe
(5) it is connected on gas outlet (3)；
It is provided with equalizer flow tube (8) between the air inlet pipe (4) and escape pipe (5), equalizer flow tube (8) two sides, which are respectively arranged with, to be penetrated
Frequency mechanism, the radio frequency mechanism include substrate disposed in parallel (6), rf board (7) and wave transparent plate (9), the wave transparent plate (9)
It is set between substrate (6) and rf board (7), and wave transparent plate (9) is movably connected on equalizer flow tube (8) close rf board (7) side,
Spacing 1mm-10mm is provided between the substrate (6) and wave transparent plate (9).
2. a kind of PECVD device of controllable air-flow uniform and stable according to claim 1, it is characterised in that：It is described to add
Thermal includes heat-conducting plate (10) and heating wire (12), offers mounting hole (11), the heating wire in the heat-conducting plate (10)
(12) it is fixed in mounting hole (11), substrate (6) and rf board (7) are fixed on sediment box (1) inner wall by heat-conducting plate (10)
On.
3. a kind of PECVD device of controllable air-flow uniform and stable according to claim 1, it is characterised in that：It is described into
It is respectively connected in tracheae (4), escape pipe (5) and equalizer flow tube (8) and inhales wave plate (13), the suction wave plate (13) is disposed in proximity to penetrate
Frequency plate (7) side.
4. a kind of PECVD device of controllable air-flow uniform and stable according to claim 1, it is characterised in that：It is described into
Port (2) is connected with gas heater (14) far from air inlet pipe (4) side.
5. a kind of PECVD device of controllable air-flow uniform and stable according to claim 1, it is characterised in that：It is described heavy
It is offered aspirating hole (15) in product case (1), is connected with vacuum machine (16) on the aspirating hole (15).
6. a kind of PECVD device of controllable air-flow uniform and stable according to claim 1, it is characterised in that：It is described into
Tracheae (4) offers air inlet (41) close to air inlet (2) one end, is provided with relief valve (42), institute in the air inlet (41)
It states air inlet (41) one end to be connected with annular chamber (43), the annular chamber (43) offers storage chamber far from air inlet (41) side
(45), the annular chamber (43) is connected on storage chamber (45) by intercommunicating pore (44), and storage chamber (45) is far from annular chamber
(43) side is connected with several tap holes (46).
7. a kind of PECVD device of controllable air-flow uniform and stable according to claim 1, it is characterised in that：It is described equal
Flow tube (8) corresponding tap hole (46) offers several equal discharge orifices (81), and is provided in each equal discharge orifice (81) and flows
Exhaust fan (82).
8. a kind of PECVD device of controllable air-flow uniform and stable according to claim 1, it is characterised in that：It is described equal
Flow tube (8) is fixed on sediment box (1) by fixed column (83), and is provided with light bulb in fixed column (83).
9. a kind of PECVD device of controllable air-flow uniform and stable according to claim 1, it is characterised in that：It is described go out
It is offered in tracheae (5) venthole (51), the venthole (51) is set as tubaeform far from gas outlet (3) one end.
10. a kind of PECVD device of controllable air-flow uniform and stable according to claim 9, it is characterised in that：It is described go out
Stomata (51) is provided with outlet exhaust fan (511) close to gas outlet (3) side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820594749.7U CN208151477U (en) | 2018-04-25 | 2018-04-25 | A kind of PECVD device of controllable air-flow uniform and stable |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820594749.7U CN208151477U (en) | 2018-04-25 | 2018-04-25 | A kind of PECVD device of controllable air-flow uniform and stable |
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| CN208151477U true CN208151477U (en) | 2018-11-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110081309A (en) * | 2019-05-22 | 2019-08-02 | 新昌次长电子科技有限公司 | A kind of portable volatile organic compounds collection controller |
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2018
- 2018-04-25 CN CN201820594749.7U patent/CN208151477U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110081309A (en) * | 2019-05-22 | 2019-08-02 | 新昌次长电子科技有限公司 | A kind of portable volatile organic compounds collection controller |
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Effective date of registration: 20220509 Address after: 230088 southwest corner of the intersection of Changning Avenue and Xiyou Road, high tech Zone, Hefei City, Anhui Province Patentee after: TONGWEI SOLAR ENERGY (ANHUI) Co.,Ltd. Address before: No. 888, Changning Avenue, high tech Zone, Hefei City, Anhui Province, 230088 Patentee before: TONGWEI SOLAR ENERGY (HEFEI) Co.,Ltd. |