CN202535628U - Plasma generating device - Google Patents
Plasma generating device Download PDFInfo
- Publication number
- CN202535628U CN202535628U CN201220074366XU CN201220074366U CN202535628U CN 202535628 U CN202535628 U CN 202535628U CN 201220074366X U CN201220074366X U CN 201220074366XU CN 201220074366 U CN201220074366 U CN 201220074366U CN 202535628 U CN202535628 U CN 202535628U
- Authority
- CN
- China
- Prior art keywords
- cavity
- gas
- order
- generation apparatus
- plasma generation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Plasma Technology (AREA)
Abstract
The utility model discloses a plasma generating device. The plasma generating device mainly comprises a first cavity, at least two second cavities, a gas dispersion component, at least two shielding units, a flow disturbance unit, at least two electrode plates, and at least one radio frequency current source. Through the flow disturbance unit and the arrangement of the flow disturbance unit, the cavities of the plasma generating device can be used to provide plasma having a more uniform density so as to improve the stability of the process.
Description
Technical field
The utility model relates to a kind of plasma generation apparatus, and is particularly related to a kind of plasma generation apparatus that uniform flow field distributes that has, and it can provide more uniform electric pulp density through the setting of flow-disturbing unit and flow-disturbing unit in cavity, and then promotes the processing procedure stability.
Background technology
In today manufacture of semiconductor technology, electric slurry can carry out very effective electricity slurry assistant chemical vapor coating (plasma-assisted chemical vapor deposition), electricity slurry assisted etch (plasma-assisted etching) and electricity slurry producing high-molecular thin film manufacture process and etching work such as (plasma polymerization).And multiple now industry all applies to the plasma manufacture technology, like solar energy factory and wafer factory.The processing procedure mode of the siliceous thin-film solar cells of traditional crystallite in the solar cell for example; Promptly usually earlier with electricity slurry enhanced chemical formula vapor deposition process (Plasma enhance chemical vapor deposition; PECVD) a large amount of hydrogen of feeding and silane are done dilution in, form the siliceous film of crystallite and promote its each item electrical characteristics to reach the target of high efficiency production capacity via reaction again.
In thin film manufacture process in the past, various raw materials and gas can be admitted in the reative cell, and some gas is just as the medium that bombards target; Some gas meeting and raw material reaction, and be deposited on the substrate, wherein can with the reactant gas of raw material reaction; Its uniformity of sending into reaction chamber can influence the uniformity and the thickness of plated film; Therefore, the filming equipment of this type can be provided with gas distributing device, and purpose is to let gas evenly send in this reaction chamber; And prevent that gas from producing fluctuation, turbulent flow or convection current whirlpool, relevant technical literature such as CN101068950A, CN101624722A, CN101949007A when sending into this reaction chamber.
Along with the lifting of electricity slurry frequency in the aforementioned several kinds of processing procedures, its plated film speed also increases thereupon.Yet when the substrate area of desiring plated film increased, the electromagnetic wave that transmits above that will cause the change of electric field because of its phase change, has relatively also influenced the uniformity of electric slurry and the efficient of plated film.Especially 8 o'clock, the ten two o'clock wafers that the coated basal plate size was known by former times in today increase to film liquid crystal display (the Thin film transistor liquid crystal display of today; TFT LCD) during the developing large-area glass substrate more than a square centimeter of factory, solar energy factory, this problem will have a strong impact on the efficient and the cost of volume production.In addition, along with the trend that the substrate that carries out plated film processing increases, the change that the gas distributing device that matches also need be done to cooperate could let large-area substrate when plated film, produce preferable uniformity and THICKNESS CONTROL property.
Summary of the invention
To defective and deficiency that prior art exists, the main purpose of the utility model is to provide a kind of plasma generation apparatus, and more uniform electric pulp density can be provided, and then promotes the processing procedure stability.
For achieving the above object, the utility model adopts following technical scheme:
A kind of plasma generation apparatus comprises: one first cavity; At least two second cavitys; One gas dispersion assembly; At least two screen units; One flow-disturbing unit; At least two battery lead plates and at least one rf electric current source.Wherein, the electrical ground connection of the outer surface of first cavity, and have one first air inlet and one first gas outlet, and wherein first air inlet is in order to feed process gas, and first gas outlet is then in order to discharge process gas; Second cavity is disposed at the inside of first cavity, and it has one second air inlet, and wherein second air inlet is introduced process gas through first air inlet; The gas dispersion assembly; Be disposed in second cavity and be adjacent to second air inlet; Combined by at least two hollow circular cylinders and at least two hollow cones, hollow circular cylinder is in order to the control gaseous flow velocity, and hollow cone is then in order to reach the effect of even diffusion gas; Screen unit is disposed in second cavity, has at least two first holes, in order to discharge the process gas of second cavity; The flow-disturbing unit is disposed in second cavity and is adjacent to screen unit, has at least two second holes, feeds the speed and the flow of the process gas of second cavity in order to adjustment; Battery lead plate is disposed at the inside of second cavity, carries an at least one processing procedure substrate in order to be, and wherein the area of battery lead plate is between 864 square centimeters to 50400 square centimeters; And at least one rf electric current source, be arranged at first cavity outside, electrically connect battery lead plate, in order to being provided, starches in second cavity radio-frequency current to produce electricity.Wherein, the gas dispersion assembly can comprise the hollow circular cylinder and the hollow cone of at least two sections different-diameters simultaneously, and smaller-diameter portion has high flow rate, and diameter major part then has low flow velocity.
According to the another characteristic of the utility model, the distributing homogeneity after hollow cone can be adjusted gas and passes through through the mode that changes tapering.
The plasma generation apparatus of the utility model has following effect:
1. the flow-disturbing unit can make in the single cavity at least two electricity slurries produce the gases that the district all has equivalent, at least two electricity slurries is produced in the district have identical electric pulp density, uses and improves the processing procedure stability; And
2. can provide the gas on the substrate one uniform Flow Field Distribution simultaneously, can make to have uniform electric pulp density on the substrate; And
3. stop effectively with screen unit that rf electric field leaks to non-electricity slurry and produce the zone, reduce the pollution of electricity slurry product and avoid producing arc discharge damage equipment.
For letting purpose, the feature and advantage of the utility model can be more obviously understandable, hereinafter is special lifts several preferred embodiments, and cooperates appended graphicly, elaborates as follows.
Description of drawings
For letting the above-mentioned of the utility model and other purposes, characteristic, advantage and the embodiment can be more obviously understandable, appended graphic explanation be following:
Fig. 1 is the plasma generation apparatus of the utility model.
Fig. 2 a is the structural representation () of the gas dispersion assembly of the utility model.
Fig. 2 b is the structural representation (two) of the gas dispersion assembly of the utility model.
Fig. 2 c is the structural representation (three) of the gas dispersion assembly of the utility model.
Fig. 3 a is the first embodiment sketch map of the utility model.
Fig. 3 b is the second embodiment sketch map of the utility model.
Fig. 4 is the 3rd embodiment sketch map of the utility model.
Fig. 5 is the 4th embodiment sketch map of the utility model.
[primary clustering symbol description]
100: 111: the first air inlets of 110: the first cavitys of plasma generation apparatus
112: the first gas outlet 112a: 120: at least two second cavitys of vacuum source
141: at least two first holes of 140: at least two screen units of 132: at least two hollow cones
150: 160: at least two battery lead plates of 151: at least two second holes in flow-disturbing unit
170: rf electric current source 171: impedance matching box 180: substrate
210: wire netting 211: 510: at least two ground units of metal grill
Embodiment
Please with reference to Fig. 1, it is depicted as the plasma generation apparatus 100 of the utility model at present, and it comprises: first cavity 110; At least two second cavitys 120, gas dispersion assembly 130, at least two screen units 140; Flow-disturbing unit 150, at least two battery lead plates 160, and at least one rf electric current source 170.
The electrical ground connection of the outer surface of first cavity 110; That is be to make first cavity 110 become the object of a zero potential; Its maskable electric field produces interference and influences its running with plasma generation apparatus 100 outer electronic instruments to prevent electric field from leaking in first cavity 110.First cavity 110 has first air inlet 111 and first gas outlet 112, and wherein first air inlet 111 is in order to connect a process gas source, and in order to the feeding process gas, and first gas outlet 112 is in order to discharge gas.At least two second cavitys 120 of configuration are with regional as plasma manufacture in first cavity 110, and for reaching the electric field shielding effect that is had with first cavity 110, it also needs electrical ground connection, can be through itself and 110 electric connections of first cavity are reached.
Starch in second cavity 120 for producing electricity, second cavity 120 has second air inlet 121.Second air inlet 121 is introduced in second cavity 120 to produce the electricity slurry in order to the gas that first air inlet 111 is fed.In addition, at least two battery lead plates 160 of configuration in second cavity 120 carry processing procedure substrate 180 in order to be, and make plasma generation apparatus 100 carry out an etching, a deposit film or a surfaction processing procedure to substrate 180.Be noted that substrate 180 is selected from glass, quartz, plastics, transparent flexible base plate and forms any material in the group.In order to obtain preferable light transmission features and lower manufacturing cost, can adopt the preferable glass of light transmission.
Electricity slurry in this plasma generation apparatus 100 produces institute's energy requirement and produces through the radio-frequency current that a rf electric current source 170 is provided.Rf electric current source 170 electrically connects at least two battery lead plates 160, on battery lead plate 160, conducts to produce rf electric field with the process gas at least two second cavitys 120 that dissociate, to produce the electricity slurry in order to radio-frequency current to be provided.In the utility model embodiment, the frequency of radio-frequency current is between 10 to 150MHz.Battery lead plate 160 is the above demands of five generation face glasss for being the carried base board area, and the area of battery lead plate 160 is between 864 square centimeters to 60000 square centimeters.
It should be noted that; Please cooperate c with reference to Fig. 2; Gas dispersion assembly 130 also can comprise simultaneously that hollow circular cylinder 131a, 131b, 131c and the 131d of multistage different-diameter and hollow cone 132 combine in another embodiment of the utility model; Smaller-diameter portion has high flow rate, and diameter major part then has low flow velocity.Make the reason of this design and mainly want the gas flow before balance hollow circular cylinder 131a, 131b, 131c and 131d centre and both sides of the edge flow out to hollow cone 132.In addition, hollow cone 132 also can accurately be adjusted the distributing homogeneity after gas passes through through the mode that changes tapering.
On the other hand, for effectively keeping the required vacuum environment of plasma manufacture and discharging plasma manufacture and carry out the remaining gas in back, second cavity 120 has at least two screen units 140.
Please with reference to Fig. 3 a, it is depicted as the first embodiment sketch map of the utility model at present, its in order to concrete demonstration second cavity 120 in the enforcement aspect of the utility model.Screen unit 140 is disposed at a surface of second cavity 120, has at least two first holes 141, and it can be in order to discharge the remaining gas of plasma manufacture.For electricity slurry is not resulted from outside second cavity 120, need make those first holes 141 be periodic arrangement, exhale outside second cavity 120 in order to the dissociate rf electric field of gas of shielding.The rf electric field of dispersing can cause following phenomenon: produce electricity and starch between first cavity 110 and second cavity 120, produce electricity slurry product and pollute; In the zone of 120 of first cavity 110 and second cavitys, produce arc discharge, the fragile device of the high temperataure phenomena that this phenomenon causes.For making screen unit 140 reach the effect of electric field shielding; Need make its thickness between between the 2mm to 10mm; Wherein the diameter of at least two first holes 141 needs 1/50th wavelength less than the radio-frequency current frequency of operation, and first hole, 141 spacings are less than 1/20th wavelength.Annotate: this wavelength is defined as the frequency of the light velocity divided by this radio-frequency current.Among the utility model first embodiment, screen unit 140 realizes that with the metallic plate with at least two first holes 141 this plate thickness is 2mm, and wherein the spacing of at least two first holes 141 is 1100mm, and diameter is 440mm.Make generation one stable electricity in plasma manufacture zone starch the field for reaching; Among the embodiment of the utility model; Can also add a gas dispersion plate (not drawing) in gas dispersion assembly 130 tops; The gas dispersion plate also has at least two group holes, can flow into the speed and the flow of second cavity 120 through the size and location adjustment gas of hole, makes the electricity slurry of at least two battery lead plates 160 both sides produce the regional identical stream condition that has.
Please with reference to Fig. 3 b, it is depicted as the utility model second embodiment sketch map at present, and wherein screen unit 140 can reach identical effect by wire netting 210, and the structural parameters of metal grill 211 are identical with first embodiment, and the grid area need be equal to hole area.The line of wire netting 210 directly is equal to the thickness of screen unit 140, and it is between between the 2mm to 10mm.In addition, among the utility model the 3rd embodiment, this wire netting 210 can extra increase at least two dull and stereotyped 211a of flow-disturbings to reach the effect of airflow field state in adjustment second cavity 120.Be noted that the utility model plasma generation apparatus comprises a vacuum source 112a, it is connected with screen unit 140, is positioned between the 0.5-760 holder ear (Torr) in order to the force value of controlling first cavity 110 and second cavity 120.
Flow-disturbing unit 150 is disposed in second cavity 120 and is adjacent to screen unit 140, has at least two second holes 151, in order to adjust the speed and the flow of the process gas that feeds second cavity 120 further.
The utility model plasma generation apparatus 100 also comprises an impedance matching box 171; Be electrically connected between rf electric current source 170 and the battery lead plate 160; The feed-in impedance of impedance to battery lead plate 160 in order to coupling rf electric current source 170; Make on the radio-frequency current transmission path no resistance phenomenon that do not match, cause the loss of radio-frequency power.The electric connection that impedance matching box 171, rf electric current source 170 and battery lead plate are 160 is by using a radio-frequency transmission line to reach, and the impedance of this radio-frequency transmission line is 50 nurses difficult to understand.
In the utility model plasma generation apparatus 100, wherein the material of first cavity 110, second cavity 120, battery lead plate 160, screen unit 140 is selected from: nickel, gold, silver, titanium, copper, palladium, stainless steel, beallon, aluminium, lining aluminium and the group that combination constituted thereof.At present please with reference to Fig. 4; It is the 3rd embodiment sketch map of the utility model; Through one for making 120 of at least two second cavitys not produce the radio frequency mutual interference phenomenon mutually, please cooperate with reference to Fig. 3 at present, it is depicted as the second embodiment sketch map of the utility model; The use of at least two screen units 140 of cause can significantly reduce after passing screen unit 140 by second cavity, 120 interior rf electric fields; Therefore can not produce the effect of disturbing mutually with being regarded as separate unit, therefore can use the radio-frequency current of 13.56MHz and two kinds of different frequencies of 40.68MHz, it is respectively rf electric current source 170, impedance matching box 171 and another rf electric current source 170a and impedance matching box 171a; Corresponding to battery lead plate 160, in order to obtain the higher processing procedure degree of freedom.
Please with reference to Fig. 5, it is the 4th embodiment sketch map of the utility model at present, for reaching high yield, uses four group of second cavity 120 to carry more processing procedure substrates to be.Be noted that; For making screen unit 140 have preferable rf electric field shield effectiveness in second cavity 120; Need make it when equipment volume increases, still have good electrically grounding characteristics; And do not influenced by stray inductance and the capacitance characteristic that radio-frequency current produced, can electrically connect screen unit 140 by at least two ground units 510.Can also electrically connect second cavity 120 to reach preferable effect by at least two ground units 510.Be noted that, and distance is no more than 1/15 wavelength of radio-frequency current frequency of operation between the ground unit 510, so that 510 of this ground units are not because of the long generation stray inductance effects earthing potential of distance.
1. the flow-disturbing unit can make in the single cavity at least two electricity slurries produce the gases that the district all has equivalent, at least two electricity slurries is produced in the district have identical electric pulp density, uses and improves the processing procedure stability; And
2. can provide the gas on the substrate one uniform Flow Field Distribution simultaneously, can make to have uniform electric pulp density on the substrate; And
3. stop effectively with screen unit that rf electric field leaks to non-electricity slurry and produce the zone, reduce the pollution of electricity slurry product and avoid producing arc discharge damage equipment.
The above; Be merely embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; Can expect easily changing or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion by said protection range with claim.
Claims (9)
1. plasma generation apparatus, it comprises:
One first cavity, the electrical ground connection of the outer surface of this first cavity, and have one first air inlet and one first gas outlet, and wherein first air inlet is in order to feed process gas, and first gas outlet is then in order to discharge process gas;
At least two second cavitys are disposed at the inside of first cavity, and it has one second air inlet, and wherein second air inlet is introduced process gas through this first air inlet;
One gas dispersion assembly; Be disposed in second cavity and be adjacent to second air inlet; Combined by at least two hollow circular cylinders and at least two hollow cones, hollow circular cylinder is in order to the control gaseous flow velocity, and hollow cone is then in order to reach the effect of even diffusion gas;
At least two screen units are disposed in second cavity, have at least two first holes, in order to discharge the process gas of second cavity;
One flow-disturbing unit is disposed in second cavity and is adjacent to screen unit, has at least two second holes, feeds the speed and the flow of the process gas of second cavity in order to adjustment;
At least two battery lead plates are disposed at the inside of second cavity, carry an at least one processing procedure substrate in order to be, and wherein the area of battery lead plate is between 864 square centimeters to 50400 square centimeters; And
At least one rf electric current source is arranged at first cavity outside, electrically connects battery lead plate, starches in second cavity to produce electricity in order to a radio-frequency current to be provided;
Wherein, this gas dispersion assembly can comprise simultaneously that the hollow circular cylinder of multistage different-diameter and hollow cone combine, and smaller-diameter portion has high flow rate, and diameter major part then has low flow velocity.
2. plasma generation apparatus according to claim 1; It is characterized in that; Said plasma generation apparatus also comprises a vacuum source, is arranged at first cavity outside, has a pipeline to be connected with first cavity; In order to the gas of first inside cavity is extracted out, and the force value of may command first cavity is positioned between 0.5 to the 760 holder ear (Torr) through this pipeline.
3. plasma generation apparatus according to claim 1 is characterized in that, said gas dispersion assembly electrically connects second cavity, has an earthing potential.
4. plasma generation apparatus according to claim 1 is characterized in that, said first hole is periodic arrangement, and in order to the shielded radio frequency electric field, and the diameter of first hole is less than 1/50th wavelength of radio-frequency current frequency of operation; And first the hole spacing less than 1/20th wavelength.
5. plasma generation apparatus according to claim 1 is characterized in that, the distributing homogeneity after said hollow cone is adjusted gas and passed through through the mode that changes tapering.
6. plasma generation apparatus according to claim 1 also comprises at least one impedance matching box, is electrically connected between rf electric current source and the battery lead plate.
7. plasma generation apparatus according to claim 6 is characterized in that, the electric connection system between said impedance matching box, this rf electric current source and battery lead plate is reached by use one radio-frequency transmission line, and the impedance of this radio-frequency transmission line is 50 nurses difficult to understand.
8. plasma generation apparatus according to claim 1 is characterized in that, the form of first hole of said screen unit is selected from one of metallic plate and wire netting.
9. plasma generation apparatus according to claim 1 is characterized in that the frequency of said radio-frequency current is between 10 to 150MHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220074366XU CN202535628U (en) | 2012-03-01 | 2012-03-01 | Plasma generating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220074366XU CN202535628U (en) | 2012-03-01 | 2012-03-01 | Plasma generating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202535628U true CN202535628U (en) | 2012-11-14 |
Family
ID=47136777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201220074366XU Expired - Fee Related CN202535628U (en) | 2012-03-01 | 2012-03-01 | Plasma generating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202535628U (en) |
-
2012
- 2012-03-01 CN CN201220074366XU patent/CN202535628U/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101933402B (en) | Multiple phase RF power for electrode of plasma chamber | |
| CN101882647B (en) | Movable holder for silicon-based film solar cells | |
| CN108624870A (en) | A kind of tunable circle throwing cavate high power microwave plasma chemical vapor deposition unit | |
| CN101882646B (en) | Deposition clamp of film solar cell | |
| US20110241547A1 (en) | Plasma processing apparatus | |
| CN101880868A (en) | Deposition box for silicon-based film solar cells | |
| CN101740876B (en) | Plasma antenna and plasma process apparatus including the same | |
| CN101857953B (en) | Face feed electrode for thin-film solar cell deposition | |
| CN208501097U (en) | A kind of tunable circle throwing cavate high power microwave plasma chemical vapor deposition unit | |
| CN101859801B (en) | Discharge electrode plate array for thin film solar cell settling | |
| CN103458599B (en) | Low-temperature plasma processing device and method | |
| CN108277479B (en) | PECVD device capable of controlling air flow uniformly and stably | |
| CN202535628U (en) | Plasma generating device | |
| CN101472384B (en) | Atmos plasma reactor | |
| JP3143649U (en) | Slot electrode | |
| CN101855707B (en) | Plasma processing apparatus | |
| CN204733444U (en) | A kind of capacitive coupling plasma processing apparatus | |
| CN201185171Y (en) | Electrode capable of improving plasma evenness | |
| JP5038769B2 (en) | Plasma processing equipment | |
| CN201194213Y (en) | Pore type electrode having uniform electric field distribution | |
| CN103167716A (en) | Vertical type plasma generating device | |
| CN208151477U (en) | A kind of PECVD device of controllable air-flow uniform and stable | |
| CN202750325U (en) | Vertical plasma generating apparatus | |
| CN202475921U (en) | Plasma generating cavity | |
| CN103107057B (en) | Air guide electrode plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121114 Termination date: 20150301 |
|
| EXPY | Termination of patent right or utility model |