CN101740876B - Plasma antenna and plasma process apparatus including the same - Google Patents

Plasma antenna and plasma process apparatus including the same Download PDF

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Publication number
CN101740876B
CN101740876B CN2008101775543A CN200810177554A CN101740876B CN 101740876 B CN101740876 B CN 101740876B CN 2008101775543 A CN2008101775543 A CN 2008101775543A CN 200810177554 A CN200810177554 A CN 200810177554A CN 101740876 B CN101740876 B CN 101740876B
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aforementioned
antenna
plasma
dielectric
branching portion
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CN101740876A (en
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吴贤泽
李昌桓
卢一镐
孔炳润
李正仁
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Semes Co Ltd
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Semes Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor
    • H01Q1/366—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. superconductor using an ionized gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits

Abstract

The aim of the invention is to provide a plasma antenna and a plasma process apparatus including the same. According to a technical solution of the invention, the plasma antenna according to an embodiment of the invention is used for the plasma antenna of the plasma process apparatus. The plasma antenna has a shape which is described as follows: the plasma antenna receives a power which is provided from a power supply part; the plasma antenna is branched to the periphery of dielectric at a branch part; the branched antennae are centralized to the middle part and are grounded at a grounding part.

Description

Plasma antenna and the plasma treatment appts that contains this antenna
Technical field
The plasma treatment appts that the present invention relates to plasma antenna and contain this antenna; More specifically, the shape that relates to the plasma antenna that uses in the plasma treatment appts that large-area substrates enforcement plasma operation is handled.
Background technology
Plasma treatment appts is widely used in the manufacturing process of semiconductor substrate, LCD.Plasma treatment appts becomes plasmoid, the regulation zone that the cation of the reacting gas of usefulness plasmoid or free radical (Radical) are handled semiconductor substrate by making the reacting gas activation.
Plasma treatment appts has: PECVD (the Plasma EnhancedChemical Vapor Deposition) device that is used for film vapor deposition.By the film that the etching evaporation goes out, make it patterned Etaching device, sputter (Sputter), ashing (Ashing) device etc.
The plasma source of this type of plasma generator has power supply coupled mode plasma source (CCP:Capacitive Coupled Plasma), dielectric coupled mode plasma source (ICP:Induced CoupledPlasma), uses ECR (Electron Cyclotron Resonance) plasma source SWP (the Surface Wave Plasma) plasma source of microwave etc.
The CCP type adds RF electric power by giving parallel plate electrode toward each other, utilize the RF electromagnetic field of vertical formation between electrode that plasma is produced, the ICP type uses the induction field by the antenna induction that can apply High frequency power to make reacting gas become plasmoid.
The plasma generator of ICP mode adopts following structure: form the dielectric that is made of insulating material on top, operation chamber, form plasma antenna on dielectric top.Along with the The Enlargement Tendency of the liquid crystal display substrate that occurs in recent years, it is big that the size of plasma treatment appts also becomes thereupon, and also the phase strain is big for dielectric size.
Dielectric is in case maximize, and in order to have the pressure differential that is enough to tackle between the dielectric top and the bottom and the intensity of deadweight, dielectric thickness has to strengthen.Yet, under the situation of dielectric thickening, because the distance between plasma antenna and plasma area becomes big, exist because of the low low problem of plasma density that generates of efficiency.
Therefore because dielectric is supported on the tessellate framework 20 shown in Figure 1 after divisible, can reduces the size of each dielectric 30, thereby also can reduce the thickness of dielectric 30.Yet criss-cross framework wants the stable dielectric 30 of supporting, just has to add the width of big frame 20.Thereby since the existence of framework 20 effective area of dielectric 30 is reduced, thereby makes isoionic generation inefficiency.
Especially at periphery and the cross-shape frame 20 residing central parts at the position, 4 turnings that comprises dielectric 30, the plasma inefficiency that produces.
In order to solve the problem of above-mentioned plasma inefficiency everywhere, though studied the plasma antenna of multiple shape, complex-shaped because of it eventually, be difficult to produce in batches, the plasma efficient of aforementioned also fails significantly to improve.
No. 0775592, (patent documentation 1) Korea S's accession number
Summary of the invention
The present invention puts forward in order to improve the problems referred to above just, the object of the present invention is to provide a kind of plasma antenna, even it also can make plasma evenly produce at large-area substrates.
Another object of the present invention is to provide a kind of plasma treatment appts, even it is at large-area substrates, also can evenly produce treatment substrate by making plasma.
Purpose of the present invention is not limited to the above purpose of explaining, the purpose of not explaining and other purpose, and probably the insider can obtain clear and definite understanding from following statement.
In order to realize aforementioned purpose, the plasma antenna of embodiments of the present invention is used for the plasma antenna of plasma generator, aforementioned plasma antenna has following shape: it accepts the power supply that power suppling part provides, and at branching portion to dielectric periphery branch, the sky alignment central authorities of aforementioned branches concentrate, and grounding parts ground connection.
In order to realize aforementioned purpose, adopt the plasma antenna of embodiments of the present invention, it is characterized in that: it is used for the plasma antenna of plasma generator, aforementioned plasma antenna is made of following two parts: the 1st antenna, it has following shape: it accepts the power supply that power suppling part provides, and at the 1st branching portion to dielectric periphery branch, the sky alignment central authorities after the aforementioned branches concentrate, and grounding parts ground connection; The 2nd antenna, it has the shape identical with aforementioned the 1st antenna, and forms in the inboard of aforementioned the 1st antenna; Aforementioned the 1st antenna and aforementioned the 2nd antenna are connected in parallel.
In order to realize aforementioned purpose, adopt the plasma treatment appts of embodiments of the present invention, it is characterized in that, comprising: the operation chamber; Dielectric, it is formed at the centre of aforementioned operation chamber, in order to aforementioned operation chamber is divided into the antenna chamber on top and the substrate processing chamber of bottom; Gas supply part, it provides gas to aforementioned substrate processing chamber; Plasma antenna, it forms in aforementioned antenna chamber; Aforementioned plasma antenna comprises: the 1st antenna, it has following shape: accept the power supply that power suppling part provides, and at the 1st branching portion to dielectric periphery branch, the sky alignment central authorities after the aforementioned branches concentrate, and grounding parts ground connection; The 2nd antenna, it has the shape identical with aforementioned the 1st antenna, and in the inboard formation of aforementioned the 1st antenna; Aforementioned the 1st antenna and aforementioned the 2nd antenna are connected in parallel.
The invention effect:
Aforementioned plasma antenna of the present invention and the plasma treatment appts that contains this antenna, has following advantage: can solve owing to contain the corner part of substrate in the inhomogeneities of interior periphery and the generation of the plasma on the central part, make the problem of the plasma treatment inefficiency on the aforementioned location.
In addition, also has following advantage: by between the 1st plasma antenna that is connected in parallel and the 2nd plasma antenna, forming variable capacitor, regulate variable capacitor, can generate multiple plasma ambient.
Description of drawings
Fig. 1 illustrates the dielectric of being cut apart by framework.
Fig. 2 is the stereogram that adopts the plasma antenna of one embodiment of the present invention.
Fig. 3 is the profile that adopts the plasma treatment appts of one embodiment of the present invention.
Description of symbols among the figure:
110, operation chamber, 120, dielectric, 130, gas supply part, 140, substrate supports platform, 150, plasma antenna, 180, power suppling part.
Embodiment
The particular content of execution mode is included in detailed description and the accompanying drawing.
If reach the execution mode that hereinafter describes in detail with reference to accompanying drawing, can and realize that then these method has clear and definite understanding to advantage of the present invention, feature.But the present invention is not limited to the execution mode of following publicity, can be by the variform imbody that differs from one another.Present embodiment only be for improve publicity of the present invention, make have in those technical fields under the present invention the general knowledge people fully understand the invention provide, the present invention only can be by the scope definition of claim.And in whole specification, same refers to a kind of constituent element with reference to label.
Below by embodiments of the present invention and with reference to being used for that plasma antenna is described and containing this antenna at the accompanying drawing of interior plasma treatment appts the present invention being described.
Fig. 2 is the stereogram that the plasma antenna of one embodiment of the present invention is adopted in expression, and Fig. 3 is the profile that the plasma treatment appts of one embodiment of the present invention is adopted in expression.
At first adopt the plasma treatment appts 100 of one embodiment of the present invention that the plasma antenna 150a that forms in the plasma treatment appts 100, the shape of 150b are described by explanation.
The plasma treatment appts 100 of one embodiment of the present invention can be made of operation chamber 110, dielectric 120, gas supply part 130, plasma antenna 150a, 150b.
Operation chamber 110 is by conductive material, and for example the aluminum or aluminum alloy crossed through the polarity oxidation processes of inwall constitutes, by the space that provides the operation of implementing plasmoid to handle with the form assembling that can decompose.
On a side of operation chamber 110, can form by gas supply part 130 and provide reaction gas piping 111 to the inside of operation chamber 110.
In addition, operation chamber 110 is by earth connection 112 ground connection.
Also have, the bottom by being connected operation chamber 110 or the not shown vacuum pump on the side can make the operation chamber 110 inner vacuum states that form, and form exhaust outlet 113, and it is discharged to the outside remaining in operation chamber 110 interior gases after treatment process.
Dielectric 120 is formed at the centre of operation chamber 110, and operation chamber 110 is divided into the substrate processing chamber 115 that the enforcement plasma operation of the antenna chamber 114 on top and bottom is handled.By dielectric 120 operation chamber 110 is divided into top operation chamber 110b and operation chamber, bottom 110a two parts shown in the figure, but also can adopt globality to constitute operation chamber 110, by dielectric 120 inside of operation chamber 110 is divided into constituting of antenna chamber 114 and substrate processing chamber 115.As shown in the figure, by dielectric 120 operation chamber 110 is being divided under the situation of top operation chamber 110b and operation chamber, bottom 110a, can be sealing between the inside and outside of operation chamber 110 and antenna chamber 114 and the substrate processing chamber 115 by partitioning portion being implemented encapsulation process.
Owing to want to handle large-area substrates (S), must strengthen the size of dielectric 120, thereby can support to be divided into the dielectric 120 of 4 parts respectively by the framework of chessboard shape as shown in Figure 1.
Insulating material such as dielectric 120 useful ceramics, quartz constitute, in order to the induction field of plasma antenna 150a, the 150b on top generation is delivered to substrate processing chamber 115 inside of operation chamber.The reason of selecting the dielectric 120 of insulating material is by reducing the capacitive couplings between plasma antenna 150a, 150b and plasma, the energy that plasma antenna 150a, 150b produce can being passed to plasma by inductive couplings.
Plasma antenna 150a, 150b by being in top produces the electromagnetic field that changes at any time in direction vertically downward, inside in operation chamber 110, though can go out the electromagnetic field of horizontal direction by the electromagnetic field inducing that changes at any time, and because the electronics that is accelerated by this kind induction field can generate ion and free radical (Radical) by the collision with neutral gas.At this moment, utilize the ion and the free radical that generate to implement the operation processing to the substrate (S) that is fixed on 110 inside, operation chamber.
Gas supply part 130 is given 110 inside, operation chamber, more specifically, reacting gas is provided for substrate processing chamber 115.Gas supply part 130 is by providing reacting gas for 110 inside, operation chamber with the pipe arrangement 111 of operation chamber 110 internal run-throughs.
Can below operation chamber 110, form the substrate that is used for fixing substrate (S) and support platform 140.Substrate supports platform 140 can use electric conducting material, for example the surperficial formations of crossing through the polarity oxidation processes such as aluminium.Substrate supports that platform 140 also can utilize not shown drive unit to drive up and down.Substrate supports platform 140 to be connected with adaptation 142 and high frequency electric source, and can add bias voltage High frequency power in the plasma operation processing procedure by high frequency electric source, regulates ion in the plasmas of operation chamber 110 inside generations to the energy of substrate (S) incident.
Plasma antenna 150a, 150b are positioned at the antenna chamber 114 that is partitioned into dielectric 120, and plasma antenna 150a, the 150b that adopts one embodiment of the present invention is described below with reference to Fig. 3.
Plasma antenna 150a, 150b are formed in the antenna chamber 114 that is partitioned into by dielectric 120, accept the RF power supply of high frequency from power suppling part 180 by power line 181.At this moment, power suppling part 180 is formed on the roof of antenna chamber 114, electric power is provided can for plasma antenna 150a, 150b.The frequency of power suppling part 180 can decide according to the purpose that meets the operation of using plasma treatment appts 100, therefore, can be changed by the people with this technical field general knowledge.Can form the coupler (matcher) 182 as the matching part between plasma antenna 150a, 150b and power suppling part 180, this coupler has the function of matched impedance, in order to energy is passed to plasma antenna 150a, 150b to greatest extent.
Just as shown in Figure 2, adopt the global shape of plasma antenna 150a, the 150b of one embodiment of the present invention to be: to accept the power supply that power suppling part 180 provides, and in the periphery branch of branching portion 151 to dielectric 120, the antenna after the branch downwards central authorities is again concentrated and is in central grounding parts 159 and is connected.More specifically, after the power supply that the central authorities top of dielectric 120 is accepted to provide, at branching portion 151, with respect to each dielectric 120 that is divided into 4 parts by framework 170, (apart from central authorities turning 152 farthest) branch to each dielectric turning.And, the antenna that is branched is connected with the grounding parts 159 of central authorities again, and is divided into 153a, 153b again at each 152 places, turning, and each antenna 153a, 153b after being divided into two are just as shown in FIG., square is formed at the top at dielectric 120, and is connected with the grounding parts 159 of central authorities again.Just as shown in FIG., be split into the whole symmetry unanimity of shape of each antenna of 4 parts.
At this moment, as shown in Figure 2, plasma antenna 150a, 150b preferably constitute by the 1st antenna 150a with at inboard the 2nd antenna 150b that forms of the 1st antenna 150a.
The 1st antenna 150a as previously mentioned, is following shape: accept high frequency electric source from power suppling part 180, and in the 1st branching portion 151 each turning 152 branches to dielectric 120, the antenna after the branch is concentrated to central authorities again, is connected with grounding parts 159.
Also have, the 2nd antenna 150b has the shape identical with the 1st antenna 150a, but the little certain proportion of its size can form in the inboard of the 1st antenna 150a.At this moment, the 1st breakout 151 of the 1st antenna 150a and the 2nd breakout 155 of the 2nd antenna can pass through power line 156 electric property conductings just as shown in FIG..Therefore, the 1st antenna 150a and the 2nd antenna 150b are connected in parallel.
Between the 1st breakout 151 and the 2nd breakout 155, can form variable capacitor (C) 157.Therefore, by regulating variable capacitor 157, make the 1st antenna 150a and the 2nd antenna 150b produce phase difference, can control current amount flowing among each antenna 150a, the 150b.Therefore, by regulating variable capacitor 157, can be in conjunction with user's purposes, conversion goes out multiple plasma ambient.
If observe the path that electric current flows, just can find out that high-frequency current flows out from power suppling part 180, by adaptation 182, arrives the 1st branching portion 151.Arrive the electric current of the 1st branching portion 151, be divided into four at the 1st branching portion 151 1, flow to each antenna of the 1st antenna.1st branching portion 151 of electric current this moment by electric property conducting the 1st antenna 150a and the power line 156 of the 2nd branching portion 155 of the 2nd antenna 150b flow to the 2nd branching portion 155 from the 1st branching portion 151.At this moment, can flow into the 1st antenna 150a and flow into the magnitude of current among the 2nd antenna 150b by regulating the variable capacitor 157 that forms on the power line 156, regulating.Electric current is by being divided into 4 turnings that each antenna of four flows into dielectric 120 at the 1st branching portion 151 1, be divided into two again at separately 4 the antenna 153a of corner, 153b, antenna 153a, the 153b of the branch of electric current by separately flow into the grounding parts 159 of central authorities.Electric current is at the 2nd branching portion 155 of the 2nd antenna 150b, flows by be divided into four antenna in the mode one identical with the 1st antenna 150a, and flows to the grounding parts 159 of central authorities again.
In aforementioned embodiments, introduce situation about being constituted by the 1st antenna 150a and the 2nd antenna 150b, changed out multiple shape but the shape of plasma antenna 150a, 150b is also expansible, for example can form the 3rd other antenna etc. in the inboard of the 2nd antenna 150b.
Adopt plasma antenna 150a, the 150b of aforementioned one embodiment of the present invention just as shown in FIG., because electric current can focus on periphery and the middle body at the turning that comprises dielectric 120, thereby can solve problem because of 4 turnings such as framework 170 and central plasma inefficiency.
Have can understanding per capita of the technical field of the invention general knowledge, available other embodiment is implemented in the scope that does not change this technical conception and essential feature.Therefore, above-mentioned execution mode is interpreted as the illustration that it only is all aspects, is not determinate.Scope of the present invention is compared with aforementioned detailed description, and mainly the scope by claim illustrates, the design of accessory rights claimed range, and all changes that scope and equivalents thereof derive or the mode of distortion all should be interpreted as within the scope of the present invention.

Claims (9)

1. plasma antenna is characterized in that: it is used for the plasma antenna of plasma generator, and wherein aforementioned plasma generator comprises:
At least one square dielectric;
Grounding parts, it is positioned at the dielectric central authorities of aforementioned at least one square;
The 1st branching portion, it is positioned at the dielectric top of aforementioned at least one square, and is positioned on the vertical line of aforementioned grounding parts; And
Aforementioned plasma antenna,
Wherein aforementioned plasma antenna is made of following two parts:
The 1st antenna, it has following shape: from aforementioned the 1st branching portion along continuous straight runs to the dielectric periphery of aforementioned at least one square branch, the antenna of each aforementioned branches runs vertically down, and along continuous straight runs branch again, and along the dielectric periphery extension of aforementioned at least one square, and concentrate to the dielectric central authorities of aforementioned at least one square, and aforementioned grounding parts ground connection; And
The 2nd antenna, it has the shape identical with aforementioned the 1st antenna, but its size is less than the certain ratio of aforementioned the 1st antenna, and form in the inboard of aforementioned the 1st antenna;
Wherein aforementioned the 1st antenna and aforementioned the 2nd antenna are connected in parallel.
2. plasma antenna according to claim 1, it is characterized in that: aforementioned the 1st antenna has following shape: it is to dielectric 4 the turning branches of aforementioned at least one square.
3. plasma antenna according to claim 2, it is characterized in that: aforementioned plasma antenna has following shape: it is concentrated to the dielectric central authorities of aforementioned at least one square after branch respectively again from dielectric 4 turnings of aforementioned at least one square, and aforementioned grounding parts ground connection.
4. plasma antenna according to claim 2, it is characterized in that: though the electric property of the 2nd branching portion conducting that aforementioned the 1st branching portion and aforementioned the 2nd antenna top set go out, and aforementioned the 1st antenna and aforementioned the 2nd antenna are connected in parallel, but form variable capacitor between aforementioned the 1st branching portion and aforementioned the 2nd branching portion.
5. a plasma treatment appts is characterized in that, comprising:
The operation chamber;
Dielectric, it is formed at the centre of aforementioned operation chamber, in order to aforementioned operation chamber is divided into the antenna chamber on top and the substrate processing chamber of bottom;
Gas supply part, it provides gas to aforementioned substrate processing chamber;
Plasma antenna, it forms in aforementioned antenna chamber;
Grounding parts, it is positioned at aforementioned dielectric central authorities; And
The 1st branching portion, it is positioned at aforementioned dielectric top, and is positioned on the vertical line of aforementioned grounding parts,
Wherein aforementioned plasma antenna comprises:
The 1st antenna, it has following shape: from aforementioned the 1st branching portion along continuous straight runs to aforementioned dielectric periphery branch, the antenna of each aforementioned branches runs vertically down, and along continuous straight runs branch again, and along aforementioned dielectric periphery extension, and concentrate to aforementioned dielectric central authorities, and grounding parts ground connection; And
The 2nd antenna, it has the shape identical with aforementioned the 1st antenna, but its size is less than the certain ratio of aforementioned the 1st antenna, and forms in that aforementioned the 1st antenna is inboard;
Wherein aforementioned the 1st antenna and aforementioned the 2nd antenna are connected in parallel.
6. plasma treatment appts according to claim 5, it is characterized in that: aforementioned the 1st antenna has to the shape of aforementioned dielectric 4 turning branches.
7. plasma treatment appts according to claim 6 is characterized in that: aforementioned plasma antenna is concentrated to aforementioned dielectric central authorities after the branch respectively again from aforementioned dielectric 4 turnings, and aforementioned grounding parts ground connection.
8. plasma treatment appts according to claim 5, it is characterized in that: though the electric property of the 2nd branching portion conducting that aforementioned the 1st branching portion and aforementioned the 2nd antenna top set go out, and aforementioned the 1st antenna and aforementioned the 2nd antenna are connected in parallel, but form variable capacitor between aforementioned the 1st branching portion and aforementioned the 2nd branching portion.
9. plasma treatment appts according to claim 5, it is characterized in that: the aforementioned electric medium is divided into 4 parts, is supported on the cross-shape frame of chessboard shape.
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