JP2003077902A - Plasma generator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a large-sized plasma processor, by which etching, ashing, or deposition or the like by using plasma is performed, which is used in a manufacturing process of a liquid crystal display substrate, an organic EL substrate, and a semiconductor silicon wafer or the like that are large-sized substrates. SOLUTION: The thickness of a dielectric window forming a vacuum chamber is changed so as to uniformly generate plasma also at the periphery of the large-sized substrate to be processed, and an electromagnetic induction coil is branched off into plural segments at the most outer periphery of the coil and they are elongated in a spiral configuration in about parallel with each other.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus used when manufacturing a large screen active matrix type liquid crystal display element, and can also be used for manufacturing PDP, semiconductors and organic EL substrates.

[0002]

2. Description of the Related Art A technique for generating plasma by arranging a planar coil outside a space partitioned by an insulator and connecting a radio frequency power source is disclosed in Japanese Patent Laid-Open No. 3-79025.
JP-A-2000-058297, JP-A-6-28002
9, JP-A-10-125497, JP-A-7-22638
3 is disclosed. In particular, as a plasma generation device for a large area substrate, as shown in FIG. 6, a structure in which four pairs of simple spiral coils in which the spiral winding directions of adjacent coils are reversed are arranged, or as shown in FIGS. 2, 37, and 38. The structure of the two parallel segment coils, the structure of the three parallel segment coils, and the structure of the four parallel segment coils have been proposed in FIG.

[0003]

The glass substrate has a length of 550 m.
Up to the size of m × 650 mm, the structure of the two parallel segment coils shown in FIG. 2 has been put to practical use, but in the larger size, the plasma generation region is concentrated in the center of the spiral coil. In order to solve this, the structure shown in FIG. 6 has been proposed and the size is increased to a size of 620 mm × 750 mm. However, the one shown in FIG. 6 is a combination of four single-winding coils, and the plasma density is highest in the center of the single-winding coil, and the plasma density in the central region of the chamber where the four coils contact each other and the outermost peripheral region of the coil are It's getting low. In FIG. 6, in order to improve the plasma density in the outermost peripheral region of the coil, the correction coil ▲ 2
3 is arranged. If this structure is applicable to a meter size or larger, the inductance of the correction coil 23 becomes too large, and it becomes difficult to drive at a radio frequency. Further, the plasma density in the central region of the chamber where the four coils are in contact with each other is reduced in principle by this structure, and it is impossible to generate a uniform plasma.

Although the plasma uniformity can be considerably improved by using the three parallel segment coil structure or the four parallel segment and coil structure shown in FIGS. 37 and 38, the vicinity of the outermost coil near the shield wall of the chamber is improved. The plasma density is lower than that near the center. As a countermeasure against this, Japanese Patent Application Laid-Open No. 10-125497 proposes a coil whose self-inductance is changed along the length direction by a coil whose cross-sectional area is changed. 550 mm x 650
This method is effective for mm size, but it is difficult to manufacture a coil for metric size or more.
There is a limit to the practical effect. This is because at the radio frequency, the electric current concentrates on the surface of the coil and does not flow so much inside the coil.

The present invention provides a means for solving these problems, and an object thereof is to enable uniform generation of high-density plasma corresponding to a large metric substrate on the entire surface of the substrate. It is to provide a plasma processing apparatus.

[0006]

In order to solve the above problems and achieve the above object, the present invention uses the following means.

[Means 1] In a plasma processing apparatus using a spiral high frequency antenna, two electrodes start from the center of the spiral, and the radius is increased while rotating spirally in the same direction from the center to the outside. In the outermost peripheral region, each electrode was further divided into two or more and formed into a spiral while having a substantially parallel arrangement, and they were connected to different matching boxes at the end portions.

[Means 2] In a plasma processing apparatus using a spiral high frequency antenna, two electrodes start from the center of the vortex, and the radius is increased while rotating spirally in the same direction from the center to the outside. Each electrode is further divided into two or more along the way and has a spiral shape while having a substantially parallel arrangement. Furthermore, each electrode is further divided into two or more in the outermost peripheral region and is substantially parallel. It has a spiral shape while having the arrangement of, and is connected to different matching boxes at the end portions.

[Means 3] In a plasma processing apparatus using a spiral high-frequency antenna, three electrodes start from the center of the vortex, and the radius is increased while spirally rotating outward from the center in the same direction, In the outermost peripheral region, each electrode is further divided into two or more and has a spiral shape while maintaining a substantially parallel arrangement.
Each was connected to a separate matching box.

[Means 4] In a plasma processing apparatus using a spiral high-frequency antenna, three electrodes start from the center of the vortex, and the radius is increased while spirally rotating outward from the center in the same direction. , Each electrode is further divided into two or more along the way, and has a spiral shape while having a substantially parallel arrangement. Further, in the outermost peripheral region, each electrode is further divided into two or more and is substantially parallel. It has a spiral shape, and is connected to separate matching boxes at the end portions.

[Means 5] In a plasma processing apparatus using a spiral high-frequency antenna, four electrodes start from the center of the vortex, and the radius is increased while rotating spirally outward from the center in the same direction. In the outermost peripheral region, each electrode was further divided into two or more and formed into a spiral while having a substantially parallel arrangement, and they were connected to different matching boxes at their end portions.

[Means 6] In a plasma processing apparatus using a spiral high-frequency antenna, four electrodes start from the center of the spiral, and the radius is increased while rotating spirally in the same direction from the center to the outside. In the middle, each electrode is further divided into two or more, and has a spiral shape while having a substantially parallel arrangement. Further, each electrode is further divided into two or more in the outermost peripheral region, It has a spiral configuration with parallel arrangement, and it was connected to separate matching boxes at the end.

[Means 7] In a plasma processing apparatus using a spiral high frequency antenna, it is composed of two sets of spiral two parallel segment coils having different spiral directions, and four spiral electrodes are provided at each end of the outermost peripheral portion. Each is connected to a separate matching box.

[Means 8] In a plasma processing apparatus using a spiral high frequency antenna, it is composed of two sets of spiral two parallel segment coils having different spiral directions as described in means 1, and the terminal ends of the respective electrodes are respectively Enabled to connect to different matching boxes.

[Means 9] In a plasma processing apparatus using a spiral high-frequency antenna, it is composed of two sets of spiral 2 parallel segment coils having different spiral directions described in means 2, and the terminal ends of the respective electrodes are respectively Enabled to connect to different matching boxes.

[Means 10] In a plasma processing apparatus using a spiral high-frequency antenna, four pairs of spiral coils 2 of mutually adjacent spiral coils having different spiral directions are used.
Each of the spiral electrodes is composed of parallel segment coils, and each of the eight spiral electrodes is connected to a different matching box at the end of the outermost peripheral portion.

[Means 11] In a plasma processing apparatus using a spiral high frequency antenna, four sets of two parallel segment coils described in means 1 are arranged substantially horizontally with respect to a substrate, and adjacent spiral directions are different. The end of each electrode was connected to a separate matching box.

[Means 12] In a plasma processing apparatus using a spiral high-frequency antenna, the two parallel segment coils described in means 2 are arranged substantially horizontally with respect to four sets of substrates, and adjacent spiral directions are different from each other. Cage,
The ends of each electrode were connected to separate matching boxes.

[Means 13] A plasma processing apparatus using a spiral high-frequency antenna, comprising two sets of spiral 4-parallel segment coils having different spiral directions,
Each of the eight spiral electrodes was connected to a different matching box at the end of the outermost circumference.

[Means 14] In a plasma processing apparatus using a spiral high-frequency antenna, the spiral-shaped high frequency antenna is composed of two sets of spiral 4-parallel segment coils having different spiral directions, and the end portions of the respective electrodes are different from each other. It is now linked to the matching box of.

[Means 15] In a plasma processing apparatus using a spiral high frequency antenna, it is composed of two sets of spiral 4-parallel segment coils having different spiral directions described in means 6, and the end portions of the respective electrodes are separate. It is now linked to the matching box of.

[Means 16] In a plasma processing apparatus using a spiral high-frequency antenna, four adjacent spiral coils 4 having different spiral directions are arranged.
It is composed of parallel segment coils, and each of the 16 spiral electrodes is connected to a different matching box at the end.

[Means 17] In a plasma processing apparatus using a spiral high-frequency antenna, four sets of four parallel segment coils described in means 5 are arranged substantially horizontally with respect to the substrate, and each of the spiral coils adjacent to each other is arranged. The spiral directions are different, and the end portions of the electrodes are connected to different matching boxes.

[Means 18] In the plasma processing apparatus using the spiral high frequency antenna, four sets of four parallel segment coils described in the means 6 are arranged substantially horizontally with respect to the substrate, and each of the spiral coils adjacent to each other is arranged. The spiral directions were different, and the end portions of each electrode were connected to different matching boxes.

[Means 19] In the plasma processing apparatus using the spiral high-frequency antenna according to means 1 to 18, the thickness of the dielectric material forming a part of the chamber is reduced on the inner surface side of the chamber. Then, the plasma density inside the chamber was made uniform by partially thinning it and increasing the electromagnetic field strength created by the coil.

[Means 20] In means 19, the plate thickness of the dielectric insulating window of the plasma processing apparatus for the rectangular substrate is made thin in the peripheral portion of the chamber as shown in FIGS. 15, 16 and 36.

[Means 21] In the plasma processing apparatus using the spiral parallel segment coils according to Means 1 to 18, below the central portion of the parallel segment coils,
The intersection of the frame of the window frame supporting the dielectric was arranged.

[Means 22] Aluminum nitride having good thermal conductivity is applied to the surface of the dielectric window from several micrometers to several tens of meters.
0 micrometer coating.

[0029]

By using the means 1 to 6, it is possible to generate a uniform and stable plasma over a wide area even with a spiral parallel segment coil having a single center.

By using the means 7, the means 8, the means 9, the means 13, the means 14 and the means 15, the directions of the spirals are different from each other.
A set of spiral parallel segment coils can be used to generate a uniform and stable plasma over a large area.

Means 10, Means 11, Means 12, Means 1
By using 6, means 17 and means 18, it is possible to generate uniform and stable plasma over a wide area by using four sets of spiral parallel segment coils that are adjacent to each other and have different spiral directions.

By using the means 19, the means 20, and the means 21, it becomes possible to generate uniform and stable plasma over a wide area. The current in the outermost peripheral region of the coil close to the shield side wall of the chamber leaks to the shield side wall side through the capacitor formed between the coil and the shield side wall, so the current flowing through the coil decreases and the induced magnetic field The strength is also reduced.
Since the strength of the induced magnetic field decreases in inverse proportion to the distance from the coil, if the dielectric insulating window is thinned, the magnetic field strength in that region becomes stronger and discharge becomes easier. By thinning the dielectric insulation window in the outermost area of the coil, it is possible to extend the discharge to areas where it is difficult to discharge. The vicinity of the center of the coil is easily discharged and the plasma density becomes high. Another way to reduce this is to move the coil away from the dielectric insulation window. In a device compatible with a large rectangular substrate, a single dielectric insulating window cannot withstand atmospheric pressure.
Use a metal frame as shown in Fig. 5, Fig. 16 and Fig. 36. By disposing the central region of the spiral parallel segment coil at the position where the frames intersect, the induced magnetic field in the central region of the spiral parallel segment coil can be attenuated, so that the plasma density can be made uniform.

By using the means 23, the temperature of the dielectric insulating window can be made uniform, and the local occurrence of stress can be prevented. As a result, damage to the dielectric insulating window due to stress concentration can be prevented, and safety can be improved.

[0034]

[Embodiment 1] FIG. 3, FIG. 7, FIG. 9 and FIG.
The spiral center of the present invention is a spiral parallel segment coil. In the conventional spiral parallel segment coil having one spiral center, as shown in FIGS. 2, 37, and 38, the electrodes of the coil start from the center, rotate in the same spiral direction, and do not separate to the terminal end, but remain one. . In the case of the present invention, FIG.
Has two electrodes starting from the center, and each electrode is divided into two in the middle to have a substantially parallel relationship, and they rotate in the same spiral direction and are connected to different matching boxes at their end portions. The conventional Fig. 2 can be explained by the inductance and the capacitor as shown in Fig. 19 when explained with the circuit model. FIG. 3 of the present invention can be explained by the circuit model of FIG. FIG. 7 of the present invention can be explained by the circuit model of FIG. FIG. 9 of the present invention can be explained by the circuit model of FIG. FIG. 10 of the present invention can be explained by the circuit model of FIG. By spreading the electrodes in parallel in the outermost peripheral region as in the present invention, the surface area of the electrodes can be increased and the resistance when a high frequency current flows can be reduced. Therefore, the resonance current easily flows in the outermost peripheral region, and a large induced magnetic field can be generated inside the chamber. In the conventional structure, the gap between the coil and the coil in the outermost peripheral region of the spiral coil becomes large, and the plasma is hardened around the electrode of the coil inside the chamber. It can be made small and plasma can be generated uniformly inside the chamber.

[Embodiment 2] FIGS. 4, 5, 13 and 14
Are two sets of spiral parallel segment coils having different spiral directions according to the present invention. A method is used in which a high-frequency current is fed from one high-frequency power source into two spiral parallel segment coils. Figure 4 can be explained by the circuit model in Figure 25. Figure 5 can be explained using the circuit model in Figure 26. Figure 13 can be explained using the circuit model in Figure 32. Figure 1
4 can be explained by the circuit model in Fig. 33. By arranging two sets of spiral parallel segment coils as in the present invention, it is possible to suppress the increase in inductance and expand the discharge area. By spreading the electrodes in parallel in the outermost peripheral region in the same manner as in Example 1, the surface area of the electrodes can be increased and the resistance when a high-frequency current flows can be reduced.

[Embodiment 3] FIGS. 8, 11, 17, and 1.
Reference numeral 8 is a high frequency antenna composed of four sets of spiral parallel segment coils in which the spiral directions of adjacent spiral coils of the present invention are different. A method is used in which a high-frequency current is fed from one high-frequency power source to four spiral parallel segment coils. FIG. 8 is FIG.
It can be explained by the circuit model of. Figure 11 can be explained by the circuit model in Figure 31. Figure 17 can be explained by the circuit model in Figure 34. Figure 18 can be explained by the circuit model in Figure 35. By arranging four sets of spiral parallel segment coils as in the present invention, an increase in inductance is suppressed,
It is possible to expand the discharge area. By spreading the electrodes in parallel in the outermost peripheral region in the same manner as in Example 1, the surface area of the electrodes can be increased and the resistance when a high-frequency current flows can be reduced. A much larger area can be uniformly discharged by the type having four sets of parallel segment coils according to the present invention, as compared with the conventional type having four sets of single turn coils shown in FIG. According to the present invention, the conventional correction coil 23 shown in FIG. 6 is also unnecessary.

[Fourth Embodiment] FIGS. 12, 15, 16, and 36 show a fourth embodiment of the present invention. Compared to the conventional FIG. 1, FIG. 12 of the present invention is characterized in that the plate thickness of the dielectric insulating window (42) is not uniform. The thickness of the dielectric insulating window (42) near the shield container of the chamber is thin. The inside of the chamber is thin and thin. The hatched areas in FIGS. 15, 16 and 36 are areas where the plate thickness is thin. In the region where the thickness of the dielectric insulating window is thin, the induction magnetic field generated by the coil acts strongly, so that discharge is facilitated and the plasma region can be expanded. The shape of the frame holding the dielectric insulating window needs to be changed according to the number of spiral parallel segment coils. Since the crossing portion of the frame attenuates the induction electromagnetic field, the arrangement in which the crossing portion of the frame and the center of the spiral are overlapped with each other is important for obtaining the most uniform plasma. In the first embodiment, the frame shown in FIG. 15 is included. In the second embodiment, the frame shown in FIG. 36 is displayed. In the third embodiment, the frame of FIG. 16 comes.

[0038]

According to the plasma generator of the present invention, plasma can be generated uniformly over a wide area. Further, according to the plasma processing apparatus using the plasma generator of the present invention, even if the area of the substrate to be processed is increased, the uniform processing with the plasma can be performed on the substrate to be processed.

The temperature of the dielectric insulating window can be made uniform by coating at least one surface of the dielectric insulating window with aluminum nitride having good thermal conductivity or by laminating a plate of aluminum nitride. The internal stress of can be reduced. As a result, damage to the dielectric insulating window plate due to thermal stress can be drastically reduced, and the safety of the device can be improved.

[Brief description of drawings]

FIG. 1 is a sectional view of a conventional inductively coupled planar plasma generator using two parallel segment coils.

FIG. 2 is a plan view of a conventional 2-parallel segment coil.

FIG. 3 is a plan view of a two parallel segment coil of the present invention.

FIG. 4 is a coil group in which two two parallel segment coils of the present invention are combined.

FIG. 5 is a coil group in which two 2-parallel segment coils of the present invention are combined.

FIG. 6 is a perspective view of a coil group in which four conventional spiral coils are combined and correction coils are arranged on the outer circumference.

FIG. 7 is a plan view of a two parallel segment coil of the present invention.

FIG. 8 is a coil group in which four 2-parallel segment coils of the present invention are combined.

FIG. 9 is a plan view of a 3-parallel segment coil of the present invention.

FIG. 10 is a plan view of a 4-parallel segment coil of the present invention.

FIG. 11 is a coil group in which four 2-parallel segment coils of the present invention are combined.

FIG. 12 is a plasma generator using a dielectric window of the present invention in which the plate thickness is thin around the chamber.

FIG. 13 is a coil group in which two 4-parallel segment coils of the present invention are combined.

FIG. 14 is a coil group in which two 4-parallel segment coils of the present invention are combined.

FIG. 15 is a dielectric window composed of four blocks of the present invention.

FIG. 16: Dielectric window composed of nine blocks of the present invention

FIG. 17 is a coil group in which four 4-parallel segment coils of the present invention are combined.

FIG. 18 is a coil group in which four 4-parallel segment coils of the present invention are combined.

FIG. 19 is a principle circuit model diagram of a conventional 2-parallel segment coil.

FIG. 20 is a principle circuit model diagram of a conventional 3-parallel segment coil.

FIG. 21 is a principle circuit model diagram of a conventional 4-parallel segment coil.

FIG. 22 is a principle circuit model diagram of the two parallel segment coils of the present invention.

FIG. 23 is a principle circuit model diagram of the three parallel segment coils of the present invention.

FIG. 24 is a principle circuit model diagram of a 4-parallel segment coil of the present invention.

FIG. 25 is a principle circuit model diagram in which two two parallel segment coils of the present invention are combined.

FIG. 26 is a principle circuit model diagram in which two two parallel segment coils of the present invention are combined.

FIG. 27 is a principle circuit model diagram of the two parallel segment coils of the present invention.

FIG. 28 is a principle circuit model diagram in which two two parallel segment coils of the present invention are combined.

FIG. 29 is a principle circuit model diagram in which four conventional single-turn coils are combined.

FIG. 30 is a principle circuit model diagram in which four 2-parallel segment coils of the present invention are combined.

FIG. 31 is a principle circuit model diagram in which four two parallel segment coils of the present invention are combined.

FIG. 32 is a principle circuit model diagram in which two 4-parallel segment coils of the present invention are combined.

FIG. 33 is a principle circuit model diagram in which two 4-parallel segment coils of the present invention are combined.

FIG. 34 is a principle circuit model diagram in which four four parallel segment coils of the present invention are combined.

FIG. 35 is a principle circuit model diagram in which four 4-parallel segment coils of the present invention are combined.

FIG. 36: Dielectric window composed of six blocks of the present invention

FIG. 37 is a plan view of a conventional 3-parallel segment coil.

FIG. 38 is a plan view of a conventional 4-parallel segment coil.

FIG. 39 is a sectional structural view of a dielectric insulating window of the present invention.

[Explanation of symbols]

1 chamber 2 glass substrate or semiconductor wafer 3 reaction gas discharge port 4 dielectric window (quartz or ceramics) 5 flat spiral coil 6 high frequency power source 7 two parallels One segment coil of the segment coils (clockwise) 8 ... One segment coil of the two parallel segment coils (clockwise) 9 ... One segment coil of the two parallel segment coils and the outermost circumference Coil (clockwise) which is divided into two parts and is arranged in parallel with one another. One segment coil of two parallel segment coils is divided into two at the outermost part and arranged in parallel with each other. Existing coil (clockwise) 11 ... one of the two parallel segment coils (clockwise) 12 ... two parallel segment coils One segment coil (clockwise) of the three 13 ... One segment coil of the two parallel segment coils (counterclockwise) 14 ... One segment coil of the two parallel segment coils (counterclockwise) 15 A coil that is one of two parallel segment coils and is divided into two at the outermost peripheral portion and arranged substantially parallel (clockwise) 16 One segment of the two parallel segment coils Coil (clockwise), which is divided into two coils at the outermost peripheral portion and arranged substantially in parallel 17 ... One of two parallel segment coils is divided into two at the outermost peripheral portion and is substantially parallel Coil arranged in the left (counterclockwise) 18 ... One of the two parallel segment coils and the outermost part has two coils. The coils are arranged substantially parallel to each other (counterclockwise) 19 ... spiral coil (counterclockwise) 20 ... spiral coil (clockwise) 21 ... spiral coil (clockwise) 22 ... spiral coil (Counterclockwise) 23 ... Auxiliary coil 24 ... One of the two parallel segment coils, which is divided into two in the middle and divided into four at the outermost periphery, and arranged in parallel (clockwise). ) 25 ... A coil (clockwise) which is one of two parallel segment coils and is divided into two in the middle and is divided into four at the outermost peripheral portion and arranged in parallel (clockwise) 26 ... Two parallel segments One segment coil (clockwise) of the coils 27 ... One segment coil (clockwise) of the two parallel segment coils 28 ... Two parallel segment coils One of the segment coils (counterclockwise) 29 ... One segment coil of the two parallel segment coils (counterclockwise) 30 ... One segment coil of the two parallel segment coils (counterclockwise) 31 ... One segment coil of the two parallel segment coils (counterclockwise) 32 ... One segment coil of the two parallel segment coils (clockwise) 33 ... One segment of the two parallel segment coils Coil (clockwise) 34 ... One of two parallel segment coils, which is a segment coil and is divided into two at the outermost peripheral portion and arranged substantially in parallel (clockwise) 35 ... Two parallel segment coils One of the segment coils is divided into two in the middle and is arranged in parallel (clockwise ) 36 ... A coil of one of the two parallel segment coils, which is divided into two at the outermost peripheral portion and arranged substantially in parallel (counterclockwise) 37 ... One of the two parallel segment coils A coil (counterclockwise) that is divided into two in the middle by one segment coil and is placed in parallel (38) ... One segment coil of two parallel segment coils is divided into two and placed in parallel in the middle Coiled (counterclockwise) 39 ... One of two parallel segment coils, which is divided into two at the outermost peripheral portion and arranged substantially in parallel (counterclockwise) 40. One segment coil of the parallel segment coils, which is divided into two at the outermost peripheral portion and arranged substantially in parallel (clockwise) 41 ... Two parallels A coil (clockwise) divided into two in the middle of one of the segment coils and arranged substantially in parallel (clockwise) 42 ... Dielectric window 43 whose plate thickness is thin in the region near the side wall of the chamber A coil (clockwise) which is one of three parallel segment coils and is divided into two at the outer peripheral portion and is arranged in parallel with one segment coil 44. One segment coil of the three parallel segment coils A coil (clockwise) that is divided into two in the outer peripheral part and arranged substantially in parallel (45) ... One of the three parallel segment coils is divided into two in the outer peripheral part and arranged in substantially parallel. Coil (clockwise) 46 ... One of four parallel segment coils is divided into two at the outer periphery and arranged in parallel. Coil (clockwise) 47 ... One of four parallel segment coils, which is divided into two in the outer peripheral part and is arranged substantially parallel (clockwise) 48 ... Four parallel segment coils One segment coil of which is divided into two in the outer peripheral portion and arranged substantially in parallel (clockwise) 49 ... One segment coil of four parallel segment coils into two in the outer peripheral portion Coils divided and arranged substantially in parallel (clockwise) 50 ... One segment coil of four parallel segment coils (counterclockwise) 51 ... One segment coil of four parallel segment coils (left) Rotation 52 ... One segment coil among the four parallel segment coils (counterclockwise) 53 ... Four parallel segment coils One segment coil (counterclockwise) 54 ... One segment coil (clockwise) of four parallel segment coils 55 ... One segment coil (clockwise) 56 of four parallel segment coils 56. One segment coil of four parallel segment coils (clockwise) 57 ... One segment coil of four parallel segment coils (clockwise) 58 ... One segment coil of four parallel segment coils A coil which is divided into two in the outer peripheral portion and arranged substantially in parallel (counterclockwise) 59 ... One segment coil of four parallel segment coils is divided into two in the outer peripheral portion and arranged substantially in parallel Coil (counterclockwise) 60 ... One segment coil out of four parallel segment coils Coil divided into two and arranged substantially in parallel (counterclockwise) 61 ... One of four parallel segment coils, which is divided into two at the outer periphery and arranged in parallel ( Counterclockwise) 62 ... A coil that is divided into two in the outer peripheral portion and is arranged substantially parallel with one segment coil of four parallel segment coils (clockwise) 63 ... Of the four parallel segment coils One segment coil is divided into two in the outer peripheral portion and is arranged substantially in parallel (clockwise) 64 ... One segment coil of four parallel segment coils is divided into two in the outer peripheral portion Coils arranged in parallel (clockwise) 65 ... One of four parallel segment coils, which is divided into two at the outer periphery and is almost parallel (Clockwise) 66 arranged in the direction 66. A metal frame 67 supporting a dielectric window plate divided into four. A dielectric region 68 with a reduced plate thickness. A dielectric region 69 with a thick plate thickness. A metal frame 70 supporting a dielectric window plate divided into nine parts ... A thin dielectric region 71 ... A thick dielectric region 72 ... One of four parallel segment coils. One segment coil (counterclockwise) 73 ... One segment coil among four parallel segment coils (clockwise) 74 ... One segment coil among four parallel segment coils (clockwise) 75 ... One segment coil (counterclockwise) of the parallel segment coils 76 ... One segment coil of the four parallel segment coils, which is divided into two at the outer peripheral portion and is substantially flat. Coil (counterclockwise) 77 ... 4 of one of the four parallel segment coils divided into two at the outer circumference and arranged substantially parallel (clockwise) 78 ... 4 A coil which is divided into two in the outer peripheral portion by one of the four parallel segment coils and arranged substantially in parallel (clockwise) 79 ... One segment coil of the four parallel segment coils and the outer peripheral portion Coil (counterclockwise) divided into two and arranged in parallel with each other 80 ... Metal frame 81 for supporting the 6 divided dielectric window plates ... A thick dielectric region 82 ... Plate thickness Thin dielectric region 83 ... Aluminum nitride plate

Claims (23)

[Claims] 1. A plasma processing apparatus using a spiral high frequency antenna, wherein two electrodes start from the center of the spiral, and the radius is increased while rotating spirally in the same direction from the center to the outside, Each of the electrodes is further divided into two or more electrodes in the outermost peripheral region, has a substantially parallel arrangement, and has a spiral shape, and each electrode is connected to a different matching box at the terminal end. Segment coil type plasma processing equipment 2. In a plasma processing apparatus using a spiral high-frequency antenna, two electrodes start from the center of the vortex, and the radius increases while spirally rotating in the same direction from the center to the outside. Each of the electrodes is further divided into two or more and has a spiral shape while having a substantially parallel arrangement. Further, each electrode is further divided into two or more in the outermost peripheral region and arranged substantially in parallel. 2 parallel segment coil type plasma processing apparatus characterized in that they have a spiral shape and are connected to different matching boxes at their end portions. 3. In a plasma processing apparatus using a spiral high frequency antenna, three electrodes start from the center of the vortex, and the radius is increased while rotating spirally in the same direction from the center to the outside. Each of the electrodes in the outer peripheral region is further divided into two or more and has a spiral shape while having a substantially parallel arrangement, and is connected to different matching boxes at the end portions, respectively. Parallel segment coil type plasma processing equipment 4. In a plasma processing apparatus using a spiral high-frequency antenna, three electrodes start from the center of the spiral and spirally rotate in the same direction outward from the center to increase the radius, and in the middle of the process. Each electrode is further divided into two or more and has a spiral shape while having a substantially parallel arrangement. Furthermore, in the outermost peripheral region, each electrode is further divided into two or more and arranged in a substantially parallel arrangement. A three parallel segment coil type plasma processing apparatus characterized in that it has a spiral shape and is connected to different matching boxes at the end portions. 5. A plasma processing apparatus using a spiral high frequency antenna, wherein four electrodes start from the center of the spiral, and the radius is increased while rotating spirally in the same direction from the center to the outside, It is characterized in that each electrode is further divided into two or more in the outermost peripheral region and has a spiral shape while having a substantially parallel arrangement, and is connected to different matching boxes at respective terminal ends. 4 parallel segment coil type plasma processing equipment 6. In a plasma processing apparatus using a spiral high frequency antenna, four electrodes start from the center of the vortex, and the radius is increased while rotating spirally in the same direction from the center to the outside. Each of the electrodes is further divided into two or more and has a spiral shape while having a substantially parallel arrangement. Further, each electrode is further divided into two or more in the outermost peripheral region and arranged substantially in parallel. 4 parallel segment coil type plasma processing apparatus characterized by having a spiral shape and being connected to different matching boxes at their end portions. 7. A plasma processing apparatus using a spiral high-frequency antenna, comprising two sets of spiral two parallel segment coils having different spiral directions, and four spiral electrodes each forming an outermost peripheral end portion. Plasma processing equipment characterized by being connected to separate matching boxes 8. A plasma processing apparatus using a spiral high-frequency antenna, comprising two sets of spiral 2-parallel segment coils having different spiral directions according to claim 1, wherein each electrode has a terminal end portion. , A plasma processing apparatus characterized by being connected to separate matching boxes 9. A plasma processing apparatus using a spiral high-frequency antenna, comprising two sets of spiral 2-parallel segment coils having different spiral directions according to claim 2, wherein each electrode has a terminal end portion. Plasma processing apparatus characterized by being connected to separate matching boxes 10. A plasma processing apparatus using a spiral high-frequency antenna, which is composed of four sets of spiral two parallel segment coils of adjacent spiral coils having different spiral directions, and eight spiral coils each. Plasma processing apparatus characterized in that the electrodes are connected to different matching boxes at the end of the outermost periphery. 11. A plasma processing apparatus using a spiral high frequency antenna, wherein four sets of two parallel segment coils according to claim 1 are arranged substantially horizontally with respect to a substrate,
A plasma processing apparatus characterized in that adjacent spiral coils have different spiral directions, and terminal ends of respective electrodes are connected to different matching boxes. 12. A plasma processing apparatus using a spiral high frequency antenna, wherein four sets of two parallel segment coils according to claim 2 are arranged substantially horizontally with respect to a substrate,
A plasma processing apparatus in which adjacent spiral coils have different spiral directions, and terminal ends of respective electrodes are connected to different matching boxes. 13. A plasma processing apparatus using a spiral high frequency antenna, comprising two sets of spiral four parallel segment coils having different spiral directions, and eight spiral electrodes at each end of the outermost peripheral portion. Plasma processing apparatus characterized by being connected to separate matching boxes 14. A plasma processing apparatus using a spiral high-frequency antenna, comprising two sets of spiral 4-parallel segment coils having different spiral directions according to claim 5, wherein each electrode has a terminal end portion, Plasma processing apparatus characterized by being connected to separate matching boxes 15. A plasma processing apparatus using a spiral high-frequency antenna, comprising two sets of spiral 4-parallel segment coils having different spiral directions according to claim 6, and the terminal ends of respective electrodes respectively. Plasma processing apparatus characterized by being connected to separate matching boxes 16. A plasma processing apparatus using a spiral high-frequency antenna, which is composed of four sets of spiral 4-parallel segment coils of adjacent spiral coils having different spiral directions, and 16 spiral electrodes each. The plasma processing apparatus is characterized in that the ends are connected to different matching boxes. 17. A plasma processing apparatus using a spiral high frequency antenna, wherein four sets of four parallel segment coils according to claim 5 are arranged substantially horizontally with respect to a substrate,
A plasma processing apparatus in which adjacent spiral coils have different spiral directions, and end portions of respective electrodes are connected to different matching boxes. 18. A plasma processing apparatus using a spiral high frequency antenna, wherein four sets of four parallel segment coils according to claim 6 are arranged substantially horizontally with respect to a substrate.
A plasma processing apparatus in which adjacent spiral coils have different spiral directions, and end portions of respective electrodes are connected to different matching boxes. 19. A plasma processing apparatus using a spiral high frequency antenna according to any one of claims 1 to 18, wherein the thickness of the dielectric material forming a part of the chamber is reduced on the inner surface side of the chamber. The plasma processing apparatus is characterized in that the plasma density inside the chamber is made uniform by partially thinning it and increasing the electromagnetic field strength created by the coil. 20. The plate thickness of a dielectric insulating window of a plasma processing apparatus for a rectangular substrate according to claim 19, wherein:
As shown in FIG. 36, the plasma processing apparatus is characterized in that it is thin around the chamber. 21. A plasma processing apparatus using a spiral-shaped parallel segment coil according to any one of claims 1 to 18, wherein a cross section of a window frame for supporting a dielectric is provided below a central portion of the parallel segment coil. Plasma processing apparatus characterized in that 22. A liquid crystal display device, an organic EL display device, or a semiconductor functional element manufactured by using the plasma processing apparatus adopting the spiral parallel segment coils according to any one of claims 1 to 21. 23. In a plasma processing apparatus using a spiral coil, a dielectric insulating window plate is prepared by coating the surface of the dielectric insulating window with aluminum nitride having good thermal conductivity or by laminating aluminum nitride plates. A plasma processing apparatus characterized in that the temperatures of the cells are made uniform.