CN209397259U - It is a kind of for improving PECVD chip into the new type nozzle of film uniformity - Google Patents

It is a kind of for improving PECVD chip into the new type nozzle of film uniformity Download PDF

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CN209397259U
CN209397259U CN201920026206.XU CN201920026206U CN209397259U CN 209397259 U CN209397259 U CN 209397259U CN 201920026206 U CN201920026206 U CN 201920026206U CN 209397259 U CN209397259 U CN 209397259U
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plate
chip
showerhead plate
flow distribution
showerhead
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CN201920026206.XU
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张彬彬
庞井成
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Tianjin Viputaik Science & Technology Development Co Ltd
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Tianjin Viputaik Science & Technology Development Co Ltd
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Abstract

The utility model discloses a kind of for improving PECVD chip into the new type nozzle of film uniformity, including head body, the head body includes nozzle body, showerhead plate and flow distribution plate, the bottom end of the nozzle body is equipped with showerhead plate, the top of the showerhead plate is equipped with flow distribution plate, and the flow distribution plate is set to the inside of nozzle body;Several airflow holes are offered on the showerhead plate, the airflow hole is circle, and the aperture of the airflow hole and pitch-row are not of uniform size.The utility model on showerhead plate by offering several airflow holes, airflow hole is circle, and airflow hole aperture and pitch-row it is not of uniform size, the aperture of airflow hole is gradually increased or reduces from the center of showerhead plate to edge, the thicknesses of layers avoided on wafer film caused by unsuitable flow pattern is uneven, that is concave or middle bulgy phenomenon may be implemented to obtain the film of uniform thickness on the uniform wafer surface of larger size.

Description

It is a kind of for improving PECVD chip into the new type nozzle of film uniformity
Technical field
The utility model relates to PECVD chip film forming spray head technical fields, especially a kind of for improving PECVD chip At the new type nozzle of film uniformity.
Background technique
PECVD: referring to the vapour deposition process of plasma enhanced chemical, is to make by microwave or radio frequency etc. containing film group At the gas ionization of atom, it is being partially formed plasma, and plasma chemistry activity is very strong, it is easy to it reacts, Deposition on substrate goes out desired film.In order to carry out chemical reaction can at a lower temperature, plasma is utilized Activity promotes to react, thus this CVD is known as plasma enhanced chemical vapor deposition (PECVD).
In the art of semiconductor manufacturing, it is often necessary to form film layer using the method for PECVD.PECVD is usually to react It is carried out in chamber, the chip including device layer is placed on the base station of reaction chamber first, then passes to reaction gas, reaction gas Body is dissociated into plasma, is adsorbed on wafer surface, and wafer surface is covered by the film layer, can by controlling the reaction time Deposition obtains the film of different-thickness.Semiconductor processing tools often include being designed to entire semiconductor substrate or chip with phase To the component of uniform mode allocation processing.These components commonly known as spray head in the field of business.
With the increase of wafer size, the film that uniform processing wafer surface obtains uniform thickness becomes extremely difficult, Due to the aperture of existing spray head and pitch-row be all it is identical, unsuitable flow pattern will cause the thicknesses of layers on wafer film Unevenly, as depicted in figs. 1 and 2 it is respectively wafer film concave or middle bulgy phenomenon, and then influences the works such as the subsequent etching of chip Skill.
Utility model content
The utility model devises a kind of equal for improving PECVD chip film forming for the deficiency in above-mentioned background technique The new type nozzle of even property, the thicknesses of layers avoided on wafer film caused by unsuitable flow pattern is uneven, i.e. concave Or middle bulgy phenomenon.
Realize that above-mentioned purpose the technical solution of the utility model is, it is a kind of for improving PECVD chip into film uniformity New type nozzle, including head body, the head body include nozzle body, showerhead plate and flow distribution plate, the nozzle body Bottom end be equipped with showerhead plate, the top of the showerhead plate is equipped with flow distribution plate, and the flow distribution plate is set to the interior of nozzle body Portion;Several airflow holes are offered on the showerhead plate, the airflow hole is round, and the aperture of the airflow hole and pitch-row It is not of uniform size.
Further, the aperture of the airflow hole is gradually increased or reduces from the center of showerhead plate to edge.
Further, the aperture of the airflow hole is 0.9-1.8mm.
Further, the aperture of the airflow hole is 0.9-1.2mm.
Further, the center of the showerhead plate and the center of nozzle body are on same vertical line, the spray head Main body is an integral molding structure with flow distribution plate, and the center of the nozzle body and the center of flow distribution plate are on same vertical line.
Further, the flow distribution plate is circle, and the bottom end of the flow distribution plate is equipped with and shunts bracket, the shunting bracket It is respectively arranged on the surrounding of flow distribution plate, the shunting bracket set on flow distribution plate surrounding is in matrix structure.
Further, the bottom end of the nozzle body is circle, and the inside of the nozzle body is splitter cavity, the spray The bottom end surrounding of head main body offers tap hole, and the space between the bottom end of the nozzle body and the top of showerhead plate is gas Flow chamber;The bottom center of the nozzle body is fixed with connecting bracket, the bottom end of the connecting bracket and the top of showerhead plate Mutually fixed, the height of the tap hole is less than the height of connecting bracket.
Further, the showerhead plate is circle, and the diameter of the showerhead plate is 300-323mm, the showerhead face The lower section of plate is equipped with heating dish, and the diameter of the heating dish is less than the diameter of showerhead plate, and the inside of the heating dish, which is equipped with, to be added Heat pipe, the heating dish and head body are electrically connected with RF radio-frequency power supply.
Further, the head body is equipped with air inlet far from one end of showerhead plate.
Compared with prior art, the utility model has the advantage that is with beneficial effect,
1. the utility model on showerhead plate by offering several airflow holes, airflow hole is round, and airflow hole Aperture and pitch-row it is not of uniform size, the aperture of airflow hole is gradually increased or reduces from the center of showerhead plate to edge, avoids Thicknesses of layers on wafer film caused by unsuitable flow pattern is uneven, i.e. concave or middle bulgy phenomenon, may be implemented The film of uniform thickness is obtained on the uniform wafer surface of larger size.
Detailed description of the invention
Fig. 1 is the concave phenomenon schematic diagram in the chip film forming in background technique;
Fig. 2 is the middle bulgy phenomenon schematic diagram in the chip film forming in background technique;
Fig. 3 the utility model is a kind of for improving PECVD chip into the structural schematic diagram of the new type nozzle of film uniformity;
Fig. 4 is that the utility model is a kind of for improving PECVD chip into flow distribution plate and spray in the new type nozzle of film uniformity The cross-sectional view of head main body;
Fig. 5 is that the utility model is a kind of for improving PECVD chip into the main view of the new type nozzle of film uniformity;
Fig. 6, which is that the utility model is a kind of, to be cutd open for improving PECVD chip at showerhead plate in the novel spraying of film uniformity View.
In figure: 1 nozzle body;2 showerhead plates;3 flow distribution plates;4 airflow holes;5 shunt bracket;6 splitter cavities;7 tap holes;8 Air flow chamber;9 connecting brackets.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work Every other embodiment obtained, fall within the protection scope of the utility model.
As shown in figures 1 to 6, a kind of for improving PECVD chip into the new type nozzle of film uniformity, including head body, institute Stating head body includes nozzle body 1, showerhead plate 2 and flow distribution plate 3, and the bottom end of the nozzle body 1 is equipped with showerhead plate 2, The top of the showerhead plate 2 is equipped with flow distribution plate 3, and the flow distribution plate 3 is set to the inside of nozzle body 1;The showerhead plate 2 On offer several airflow holes 4, the airflow hole 4 is circle, and the aperture of the airflow hole 4 and pitch-row are not of uniform size;Institute The aperture for stating airflow hole 4 is gradually increased or reduces from the center of showerhead plate 2 to edge, and uniform increasing or reduction;Gas The aperture of discharge orifice 4 gradually uniformly increases and then is gradually reduced from the center of showerhead plate 2 to edge, the aperture of airflow hole 4 It gradually uniformly reduces and then is gradually increased from the center of showerhead plate 2 to edge, if by being offered on showerhead plate 2 Dry airflow hole 4, airflow hole 4 is circle, and the aperture of airflow hole 4 and pitch-row are not of uniform size, and the aperture of airflow hole 4 is by showerhead face The center of plate 2 is gradually increased or reduces to edge, avoids the film layer on wafer film caused by unsuitable flow pattern In uneven thickness, i.e. concave or middle bulgy phenomenon may be implemented to obtain uniform thickness on the uniform wafer surface of 6 cun of 8 cun of larger sizes The film of degree.The head body is equipped with air inlet far from one end of showerhead plate 2;The aperture of the airflow hole 4 is 0.9- 1.8mm;Preferably, the aperture of the airflow hole 4 is 0.9-1.2mm.
The center of the showerhead plate 2 and the center of nozzle body 1 are on same vertical line, and the equal of gas can be enhanced Even property, the nozzle body 1 are an integral molding structure with flow distribution plate 3, and the stability of nozzle body 1 Yu flow distribution plate 3 may be implemented, The center of the nozzle body 1 and the center of flow distribution plate 3 are on same vertical line, and the uniformity of gas can be enhanced;It is described Flow distribution plate 3 is circle, and the bottom end of the flow distribution plate 3 is equipped with and shunts bracket 5, and the shunting bracket 5 is respectively arranged on flow distribution plate 3 Surrounding, the shunting bracket 5 set on 3 surrounding of flow distribution plate are in matrix structure;The bottom end of the nozzle body 1 is round, and the spray The inside of head main body 1 is splitter cavity 6, and the bottom end surrounding of the nozzle body 1 offers tap hole 7, the bottom of the nozzle body 1 Space between end and the top of showerhead plate 2 is air flow chamber 8;The bottom center of the nozzle body 1 is fixed with connecting bracket 9, the bottom end of the connecting bracket 9 is mutually fixed with the top of showerhead plate 2, and the height of the tap hole 4 is less than connecting bracket 9 Highly, it is convenient for the uniform inflow stream chamber 8 of air-flow, is further sprayed by airflow hole 4 and complete chip film-forming process;The spray head Panel 2 is circle, and the diameter of the showerhead plate 2 is 300-323mm, and the lower section of the showerhead plate 2 is equipped with heating dish, described The diameter of heating dish is less than the diameter of showerhead plate 2, and the inside of the heating dish is equipped with heating tube, the heating dish and spray head sheet Body is electrically connected with RF radio-frequency power supply, and RF radio-frequency power supply generates plasma.Preferably, the diameter of the showerhead plate 2 is 320mm。
Specific implementation: being first evenly heated heating dish by heating tube, then place the wafer in heating dish, It is secondary to open the RF radio-frequency power supply that is electrically connected with heating dish and head body, then from air inlet to nozzle body 1 inside be passed through phase The gas answered, then gas flows into the splitter cavity 6 of nozzle body 1 by flow distribution plate 3, and the tap hole 7 being connected to by splitter cavity 6 is by gas Body inflow stream chamber 8 finally sprays the gas, RF by the aperture opened up on showerhead plate 2 and pitch-row airflow hole 4 not of uniform size Radio-frequency power supply makes the gas ionization containing film composed atom, and plasma is formed between heating dish and head body, by It is very strong in plasma chemistry activity, it is easy to react, when depositing desired film on chip, then controlling reaction Between, the chip with different-thickness film can be obtained.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art, It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.

Claims (9)

1. a kind of for improving PECVD chip into the new type nozzle of film uniformity, including head body, the head body includes Nozzle body, showerhead plate and flow distribution plate, the bottom end of the nozzle body are equipped with showerhead plate, set above the showerhead plate There is flow distribution plate, and the flow distribution plate is set to the inside of nozzle body;It is characterized in that, offering several on the showerhead plate Airflow hole, the airflow hole is circle, and the aperture of the airflow hole and pitch-row are not of uniform size.
2. according to claim 1 a kind of for improving PECVD chip into the new type nozzle of film uniformity, feature exists In the aperture of the airflow hole is gradually increased or reduces from the center of showerhead plate to edge.
3. according to claim 1 or 2 a kind of for improving PECVD chip into the new type nozzle of film uniformity, feature It is, the aperture of the airflow hole is 0.9-1.8mm.
4. according to claim 3 a kind of for improving PECVD chip into the new type nozzle of film uniformity, feature exists In the aperture of the airflow hole is 0.9-1.2mm.
5. according to claim 1 a kind of for improving PECVD chip into the new type nozzle of film uniformity, feature exists In the center of the showerhead plate and the center of nozzle body are on same vertical line, and the nozzle body is with flow distribution plate Integrated formed structure, the center of the nozzle body and the center of flow distribution plate are on same vertical line.
6. a kind of for improving PECVD chip into the new type nozzle of film uniformity, feature according to claim 1 or 5 It is, the flow distribution plate is circle, and the bottom end of the flow distribution plate is equipped with and shunts bracket, and the shunting bracket is respectively arranged on shunting The surrounding of plate, the shunting bracket set on flow distribution plate surrounding are in matrix structure.
7. according to claim 6 a kind of for improving PECVD chip into the new type nozzle of film uniformity, feature exists In the bottom end of the nozzle body is circle, and the inside of the nozzle body is splitter cavity, the bottom end four of the nozzle body Offer tap hole week, the space between the bottom end of the nozzle body and the top of showerhead plate is air flow chamber;The spray head The bottom center of main body is fixed with connecting bracket, and the bottom end of the connecting bracket is mutually fixed with the top of showerhead plate, and described point The height of discharge orifice is less than the height of connecting bracket.
8. according to claim 1 or claim 7 a kind of for improving PECVD chip into the new type nozzle of film uniformity, feature It is, the showerhead plate is circle, and the diameter of the showerhead plate is 300-323mm, and the lower section of the showerhead plate is equipped with Heating dish, the diameter of the heating dish are less than the diameter of showerhead plate, and the inside of the heating dish is equipped with heating tube, the heating Disk and head body are electrically connected with RF radio-frequency power supply.
9. according to claim 1 a kind of for improving PECVD chip into the new type nozzle of film uniformity, feature exists In the head body is equipped with air inlet far from one end of showerhead plate.
CN201920026206.XU 2019-01-08 2019-01-08 It is a kind of for improving PECVD chip into the new type nozzle of film uniformity Active CN209397259U (en)

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Application Number Priority Date Filing Date Title
CN201920026206.XU CN209397259U (en) 2019-01-08 2019-01-08 It is a kind of for improving PECVD chip into the new type nozzle of film uniformity

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CN209397259U true CN209397259U (en) 2019-09-17

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110923669A (en) * 2019-11-26 2020-03-27 深圳市华星光电半导体显示技术有限公司 Gas spraying device and chemical vapor deposition method
CN113725061A (en) * 2021-09-01 2021-11-30 长鑫存储技术有限公司 Wafer processing apparatus and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110923669A (en) * 2019-11-26 2020-03-27 深圳市华星光电半导体显示技术有限公司 Gas spraying device and chemical vapor deposition method
CN113725061A (en) * 2021-09-01 2021-11-30 长鑫存储技术有限公司 Wafer processing apparatus and method

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