CN101202206A - Reaction chamber inner lining and reaction chamber containing the inner lining - Google Patents
Reaction chamber inner lining and reaction chamber containing the inner lining Download PDFInfo
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- CN101202206A CN101202206A CNA2006101649842A CN200610164984A CN101202206A CN 101202206 A CN101202206 A CN 101202206A CN A2006101649842 A CNA2006101649842 A CN A2006101649842A CN 200610164984 A CN200610164984 A CN 200610164984A CN 101202206 A CN101202206 A CN 101202206A
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Abstract
The invention discloses a reaction cavity lining and a reaction cavity containing the lining. The invention comprises a side face lining and a bottom face lining. The side face lining is divided into an inner lining and an outer lining and a sealed space is formed between the two linings. A plurality of pores are cut on the inner lining, and a lining gas intake and a lining gas vent are cut on the outer lining and respectively correspond to the gas intake and the gas vent of the reaction cavity. The process gas first enters the sealed space between the inner lining and the outer lining, and then enters the reaction cavity through the pores of the inner lining. Then the gas enters the sealed space between the inner lining and the outer lining through the reaction cavity and is emitted through the gas vent. The speed of the gas flow in the reaction cavity can be lead to be equalized so as to not only protect cavity walls but also equally distribute the gas in the cavity. The invention is mainly applicable to the reaction cavity of the manufacturing equipment of semiconductors and other similar cavities.
Description
Technical field
The present invention relates to a kind of semiconductor processing equipment parts, relate in particular to a kind of reaction chamber and liner thereof.
Background technology
Semiconductor wafer processing comprises the chemical vapor deposition (CVD) of metal level, dielectric layer and semiconductor material layer, and such deposition processes comprises the etching to these layers, polishing of photoresist mask layer or the like.In the situation of etching, plasma etching is generally used for etching sheet metal, dielectric layer and semi-conducting material.The plasma reactor of parallel plate type generally comprises reaction chamber, and being etched in the reaction chamber of silicon wafer finished, and etching gas is ionized into plasma by electrode after entering reaction chamber, the wafer in the plasma etching reaction chamber.
During plasma etch process, make gas ionization to form plasma by add lot of energy to the gas that is in lower pressure.By regulating the current potential of wafer, plasma is directed to so that vertically collide on the wafer, makes that the material of no masked areas is removed on the wafer.
Semiconductor machining system is used for processing semiconductor wafer, thereby makes integrated circuit.Particularly in processes such as etching, oxidation, chemical vapor deposition (CVD), use semiconductor machining usually based on plasma.Traditional plasma process system controls air-flow or the plasma flow in the plasma process chamber usually, so that the environment of the best is provided for processed wafer.
The even distribution of the uneven distribution meeting article on plasma body of the processing gas in the reaction chamber has a negative impact.
In order to obtain uniform etch rate on the entire wafer surface, wish on wafer surface, can distribute uniformly plasma.At present generally is the uniformity that improves plasma in the chamber by the intake method that improves reaction chamber, for example uses the gas distribution plate, nozzle of different shape etc.The even distribution of the uneven distribution meeting article on plasma body of the etching gas in the reaction chamber has a negative impact.The exhaust outlet of reaction chamber links to each other with vacuum pump, its position, aperture, axial etc. also can the uniformity of plasma in the chamber be exerted an influence.
Common reaction chamber structure as shown in Figure 1, by anabolic reaction chambers 11 such as insulating window 2, chamber sidewall 3, chamber bottoms 16, in establish electrostatic chuck 7 (perhaps mechanical chuck), can place wafer 8 on the electrostatic chuck 7.Exhaust outlet 6 and vacuum plant (dried pump etc., not shown) connect, reaction chamber 11 is manufactured vacuum environment, process gas is by central air induction mouth 4 (or peripheral inlet port 5, perhaps the two combination) enter reaction chamber 11, the coil 1 of insulating window 2 tops passes to radio-frequency (RF) energy, by insulating window 2 couplings, in reaction chamber 11, form plasma, the wafer on the electrostatic chuck 78 is carried out etching.Also can etching cavity sidewall 3 and chamber bottom 16 in the time of plasma etching wafer 8, this can have a negative impact to etching mechanical endurance, wafer engraving quality etc.
Generally in reaction chamber 11, place liner with protection chamber sidewall 3 and chamber bottom 16; as shown in Figure 1; liner in the reaction chamber 11 comprises sidewall liner 9, bottom surface liner 10; make chamber sidewall 3 and chamber bottom 16 no longer directly contact plasma; avoid the bombardment of plasma, and make cleaning and change more convenient.
Exhaust outlet 6 can be arranged on reaction chamber 11 under or position such as side-lower.When carrying out PROCESS FOR TREATMENT (etching etc.), the chamber air inlet provides process gas, and the vacuum pump (not shown) that starts exhaust outlet 6 ends simultaneously is to keep the constant and removing etching particle of reaction chamber 11 internal pressures.
In order to obtain uniform etch rate on the entire wafer surface, wish on wafer surface, can distribute uniformly plasma.And in the existing reaction chamber, because gas injects and the design of air suction mode, air-flow must experience the change of flow velocity and direction in chamber, causes the instability of local gas pressure like this.In order not influence technical process, the sectional area of bleeding point 6 is general bigger, and reaction chamber is interior, and gas flow is also inconsistent, causes internal pressure inhomogeneous from the far and near different position of bleeding point, and plasma distribution is inhomogeneous, influences the etching technics result.
Summary of the invention
The purpose of this invention is to provide and a kind ofly can protect chamber wall, can make the uniform reaction chamber liner of distribution of gas in the chamber again, and comprise the reaction chamber of this liner.
The objective of the invention is to be achieved through the following technical solutions:
Reaction chamber liner of the present invention comprises side liner, bottom surface liner, and described side liner divides two-layer, is respectively nexine liner and outer liner,
The upper limb of described nexine liner and outer liner interconnects; Lower edge is connected with the bottom surface liner respectively, forms enclosure space between nexine liner and the outer liner;
Described nexine liner has a plurality of pores;
Described outer liner has liner air inlet openings and liner exhaust port.
A plurality of pores on the described nexine liner are uneven distribution,
Gas cell distribution density near liner air inlet openings on the outer liner and liner exhaust port position is less;
Gas cell distribution density away from liner air inlet openings on the outer liner and liner exhaust port position is bigger.
The diameter difference of a plurality of pores on the described nexine liner,
Hole diameter near liner air inlet openings on the outer liner and liner exhaust port position is less;
Hole diameter away from liner air inlet openings on the outer liner and liner exhaust port position is bigger.
Described a plurality of pore is parallel to each other.
The two ends of described pore are respectively equipped with chamfering.
Reaction chamber of the present invention comprises sidewall and diapire, and the sidewall of reaction chamber is provided with air inlet, exhaust outlet, it is characterized in that, is provided with above-mentioned reaction chamber liner in the described reaction chamber,
Described air inlet is corresponding with the liner air inlet openings;
Described exhaust outlet is corresponding with the liner exhaust port.
Be provided with electrostatic chuck in the described reaction chamber, the upper surface of described electrostatic chuck can be provided with wafer, and the upper surface of described electrostatic chuck is higher than the upper surface of bottom surface liner.
Be provided with electrostatic chuck in the described reaction chamber, the upper surface of described electrostatic chuck can be provided with wafer, and the upper surface of described electrostatic chuck is concordant with the upper surface of bottom surface liner.
As seen from the above technical solution provided by the invention, reaction chamber liner of the present invention and comprise the reaction chamber of this liner because that the side liner divides is two-layer, forms enclosure space between nexine liner and the outer liner, and the nexine liner has a plurality of pores; Outer liner has liner air inlet openings and liner exhaust port, corresponding with the air inlet and the exhaust outlet of reaction chamber respectively, process gas at first enters the enclosure space between nexine liner and the outer liner, enter into reaction chamber by the pore on the nexine liner then, enter into enclosure space between nexine liner and the outer liner by reaction chamber again, and discharge by exhaust outlet.Make enclosure space and reaction chamber between nexine liner and the outer liner constitute two independently gas flow space, utilize two independently bufferings of gas flow space, improve the uniformity that the reaction chamber indoor gas injects and gets rid of and flow in reaction chamber, thereby improve the uniformity of plasma in the reaction chamber.
The present invention makes the gas flow rate in the reaction chamber be tending towards homogenizing, can make chamber wall be protected, can make again the distribution of gas in the chamber even.When wafer carries out etching technics in chamber, can obtain uniform etch rate on the entire wafer surface.Mainly be applicable to the reaction chamber of semiconductor processing equipment, also be applicable to other similar chamber.
Description of drawings
Fig. 1 is the structural representation of reaction chamber of the prior art and liner thereof;
Fig. 2 is the structural representation of reaction chamber of the present invention and liner thereof;
Fig. 3 is the planar structure schematic diagram of liner of the present invention.
Embodiment
Reaction chamber liner of the present invention is mainly used in to be protected the wall of reaction chamber, and said here reaction chamber mainly refers to the reaction chamber of semiconductor wafer process equipment, also can be other chamber.
The embodiment that it is preferable such as Fig. 2, shown in Figure 3 comprise side liner and bottom surface liner 10, and wherein the side liner divides two-layerly, is respectively nexine liner 12 and outer liner 9, and the upper limb of nexine liner 12 and outer liner 9 interconnects; Lower edge is connected with bottom surface liner 10 respectively, just forms an enclosure space like this between nexine liner 12 and the outer liner 9.
Described nexine liner 12 has a plurality of pores 13, and nexine liner 12 communicates with reaction chamber 11 by pore 13 with enclosure space between the outer liner 9.
Described outer liner 9 has liner air inlet openings 14 and liner exhaust port 15, and the enclosure space between nexine liner 12 and the outer liner 9 is by liner air inlet openings 14 and liner exhaust port 15 and exterior.
A plurality of pores 13 on the described nexine liner 12 are preferably uneven distribution, and are less near pore 13 distribution densities of liner air inlet openings 14 on the outer liner 9 and liner exhaust port 15 positions; Pore 13 distribution densities away from liner air inlet openings 14 on the outer liner 9 and liner exhaust port 15 positions are bigger.Also can be even distribution as required, or other distribution mode.
The diameter of a plurality of pores 13 on the described nexine liner 12 also preferably adopts different sizes, and is less near pore 13 diameters of liner air inlet openings 14 on the outer liner 9 and liner exhaust port 15 positions; Pore 13 diameters away from liner air inlet openings 14 on the outer liner 9 and liner exhaust port 15 positions are bigger.Also can adopt mode as required with diameter.
Preferably be parallel to each other between described a plurality of pore 13.Also preferably vertical with nexine liner 12.Also can adopt other set-up mode as required.
The two ends of described pore 13 preferably are respectively equipped with chamfering, or make inner small and outside big horn mouth shape.
Reaction chamber of the present invention; comprise sidewall 3 and diapire 16, the inner space that sidewall 3 and diapire 16 constitute is reaction chamber 11, and sidewall 3 is provided with air inlet 5, exhaust outlet 6; be provided with above-mentioned reaction chamber liner in the described reaction chamber 11, be used for protective side wall 3 and diapire 16.
Described air inlet 5 is corresponding with liner air inlet openings 14, and described exhaust outlet 6 is corresponding with liner exhaust port 15.
When process gas enters reaction chamber 11 by air inlet 5, when discharging by exhaust outlet 6 again.Process gas at first enters the enclosure space between nexine liner 12 and the outer liner 9, enter into reaction chamber 11 by the aperture on the nexine liner 12 13 then, enter into enclosure space between nexine liner 12 and the outer liner 9 by reaction chamber 11 again, and discharge by exhaust outlet 6.
Enclosure space between nexine liner 12 and the outer liner 9 and reaction chamber 11 constitute two independently gas flow space.The nexine liner is used for guaranteeing the uniformity of plasma in the reaction chamber 11, utilize two independently bufferings of gas flow space, improve the uniformity that gas injects and gets rid of and flow in the reaction chamber 11 in chamber, thereby improve the uniformity of plasma in the chamber.
Pore uneven distribution on the nexine liner and aperture difference, part near air inlet and exhaust outlet, gas cell distribution is less, the aperture is also less, part away from air inlet and exhaust outlet, gas cell distribution is more, the aperture is also bigger, so just can reduce the influence of air inlet and exhaust outlet, guarantee that gas evenly injects and discharge in each position distribution of gas in the reaction chamber.
Pore uneven distribution on the nexine liner, aperture difference, also as required combination in any to reach better effect.
Be provided with electrostatic chuck 7 in the described reaction chamber 11, the upper surface of described electrostatic chuck 7 can be provided with wafer 8, the upper surface of described electrostatic chuck 7 can be higher than the upper surface of bottom surface liner 10, and is preferably concordant with the upper surface of bottom surface liner 10, can reduce the influence of structure to air-flow like this.
The present invention mainly is applicable to the reaction chamber of semiconductor processing equipment, also is applicable to other similar chamber.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (8)
1. a reaction chamber liner comprises side liner, bottom surface liner, it is characterized in that, described side liner divides two-layer, is respectively nexine liner and outer liner,
The upper limb of described nexine liner and outer liner interconnects; Lower edge is connected with the bottom surface liner respectively, forms enclosure space between nexine liner and the outer liner;
Described nexine liner has a plurality of pores;
Described outer liner has liner air inlet openings and liner exhaust port.
2. reaction chamber liner according to claim 1 is characterized in that, a plurality of pores on the described nexine liner are uneven distribution,
Gas cell distribution density near liner air inlet openings on the outer liner and liner exhaust port position is less;
Gas cell distribution density away from liner air inlet openings on the outer liner and liner exhaust port position is bigger.
3. reaction chamber liner according to claim 1 is characterized in that, the diameter difference of a plurality of pores on the described nexine liner,
Hole diameter near liner air inlet openings on the outer liner and liner exhaust port position is less;
Hole diameter away from liner air inlet openings on the outer liner and liner exhaust port position is bigger.
4. according to claim 1,2 or 3 described reaction chamber liners, it is characterized in that described a plurality of pores are parallel to each other.
5. according to claim 1,2 or 3 described reaction chamber liners, it is characterized in that the two ends of described pore are respectively equipped with chamfering.
6. a reaction chamber comprises sidewall and diapire, and the sidewall of reaction chamber is provided with air inlet, exhaust outlet, it is characterized in that, is provided with above-mentioned reaction chamber liner in the described reaction chamber,
Described air inlet is corresponding with the liner air inlet openings;
Described exhaust outlet is corresponding with the liner exhaust port.
7. reaction chamber according to claim 6 is characterized in that, is provided with electrostatic chuck in the described reaction chamber, and the upper surface of described electrostatic chuck can be provided with wafer, and the upper surface of described electrostatic chuck is higher than the upper surface of bottom surface liner.
8. reaction chamber according to claim 6 is characterized in that, is provided with electrostatic chuck in the described reaction chamber, and the upper surface of described electrostatic chuck can be provided with wafer, and the upper surface of described electrostatic chuck is concordant with the upper surface of bottom surface liner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610164984A CN100587904C (en) | 2006-12-11 | 2006-12-11 | Reaction chamber inner lining and reaction chamber containing the inner lining |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610164984A CN100587904C (en) | 2006-12-11 | 2006-12-11 | Reaction chamber inner lining and reaction chamber containing the inner lining |
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| CN101202206A true CN101202206A (en) | 2008-06-18 |
| CN100587904C CN100587904C (en) | 2010-02-03 |
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| CN200610164984A Active CN100587904C (en) | 2006-12-11 | 2006-12-11 | Reaction chamber inner lining and reaction chamber containing the inner lining |
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| CN102403181A (en) * | 2010-09-14 | 2012-04-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process chamber and plasma processing equipment applying same |
| CN102766902A (en) * | 2011-05-05 | 2012-11-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Processing chamber device and substrate processing equipment with processing chamber device |
| CN102860138A (en) * | 2010-07-21 | 2013-01-02 | 应用材料公司 | Plasma processing apparatus and liner assembly for tuning electrical skews |
| CN103132054A (en) * | 2011-11-30 | 2013-06-05 | 理想能源设备(上海)有限公司 | Plasma processing device |
| CN103594314A (en) * | 2012-08-17 | 2014-02-19 | 晶呈科技股份有限公司 | Gas phase etching equipment with multiple cavities |
| CN104037046A (en) * | 2014-06-25 | 2014-09-10 | 上海和辉光电有限公司 | Reaction chamber and wafer machining method using same |
| CN104979249A (en) * | 2015-07-22 | 2015-10-14 | 上海华力微电子有限公司 | Gas in and out device, heat treatment machine board, and gas in and out method |
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| CN108950519A (en) * | 2017-05-19 | 2018-12-07 | 北京北方华创微电子装备有限公司 | The liner and chamber of chamber |
| CN109449073A (en) * | 2018-09-29 | 2019-03-08 | 蚌埠市龙子湖区金力传感器厂 | A kind of uniform sensor monocrystalline silicon etching device of reaction |
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| CN102860138A (en) * | 2010-07-21 | 2013-01-02 | 应用材料公司 | Plasma processing apparatus and liner assembly for tuning electrical skews |
| CN102403181A (en) * | 2010-09-14 | 2012-04-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process chamber and plasma processing equipment applying same |
| CN102403181B (en) * | 2010-09-14 | 2015-09-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Processing chamber and apply the apparatus for processing plasma of this processing chamber |
| CN102766902B (en) * | 2011-05-05 | 2015-12-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Processing chamber device and the substrate processing equipment with this processing chamber device |
| CN102766902A (en) * | 2011-05-05 | 2012-11-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Processing chamber device and substrate processing equipment with processing chamber device |
| CN103132054A (en) * | 2011-11-30 | 2013-06-05 | 理想能源设备(上海)有限公司 | Plasma processing device |
| CN103132054B (en) * | 2011-11-30 | 2016-01-13 | 理想能源设备(上海)有限公司 | Plasma processing apparatus |
| CN103594314A (en) * | 2012-08-17 | 2014-02-19 | 晶呈科技股份有限公司 | Gas phase etching equipment with multiple cavities |
| CN103594314B (en) * | 2012-08-17 | 2015-11-18 | 晶呈科技股份有限公司 | There is the vapor phase etchant equipment of Multicarity |
| CN104037046A (en) * | 2014-06-25 | 2014-09-10 | 上海和辉光电有限公司 | Reaction chamber and wafer machining method using same |
| CN104979249B (en) * | 2015-07-22 | 2019-01-22 | 上海华力微电子有限公司 | Air inlet-outlet device, the bench heat treater with air inlet-outlet device and disengaging gas method |
| CN104979249A (en) * | 2015-07-22 | 2015-10-14 | 上海华力微电子有限公司 | Gas in and out device, heat treatment machine board, and gas in and out method |
| CN108950519B (en) * | 2017-05-19 | 2021-03-02 | 北京北方华创微电子装备有限公司 | Lining of chamber and chamber |
| CN108950519A (en) * | 2017-05-19 | 2018-12-07 | 北京北方华创微电子装备有限公司 | The liner and chamber of chamber |
| CN107623995A (en) * | 2017-08-24 | 2018-01-23 | 深圳崇达多层线路板有限公司 | A kind of auxiliary vacuum extractor and vacuum pumping method for improving removing glue uniformity |
| CN107623995B (en) * | 2017-08-24 | 2019-12-13 | 深圳崇达多层线路板有限公司 | Auxiliary vacuumizing device and vacuumizing method for improving glue removing uniformity |
| CN109449073A (en) * | 2018-09-29 | 2019-03-08 | 蚌埠市龙子湖区金力传感器厂 | A kind of uniform sensor monocrystalline silicon etching device of reaction |
| CN112086337A (en) * | 2019-06-14 | 2020-12-15 | 北京北方华创微电子装备有限公司 | Process chamber |
| CN112086337B (en) * | 2019-06-14 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Process chamber |
| WO2022247621A1 (en) * | 2021-05-26 | 2022-12-01 | 北京北方华创微电子装备有限公司 | Lining device and semiconductor processing apparatus |
| CN113441032A (en) * | 2021-06-25 | 2021-09-28 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and gas conveying device thereof |
| CN115305460A (en) * | 2022-08-02 | 2022-11-08 | 江苏微导纳米科技股份有限公司 | Semiconductor processing chamber and PECVD (plasma enhanced chemical vapor deposition) coating equipment |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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